Multifunctional integrated DIP-24 appearance intelligent power module

Abstract

The invention belongs to but not limited to the technical field of semiconductors, and discloses a multifunctional integrated DIP-24 appearance intelligent power module, a packaging structure of the multifunctional integrated DIP-24 appearance intelligent power module comprises a lead frame, a plastic packaging body and a semiconductor chip, the lead frame is provided with pins from the second pin to the twenty-fifth pin, at least one BSD chip, one IC chip, six IGBT chips and six FRD chips are integrated, and IGBTs and FRDs are arranged in pairs in a one-to-one correspondence mode. The BSD chip is connected with the second to twelfth pins and the first three IGBTs, the IC chip is connected with the thirteenth to twentieth pins and the last three IGBTs, the back surfaces of the chips are welded on the lead frame, and bonding wires are arranged in a layered and staggered manner. According to the invention, high integration is realized in a DIP-24 limited space, the problems of signal interference, large parasitic parameters and the like are solved, the reliability, the heat dissipation performance and the anti-electromagnetic interference capability of the module are improved, and the multi-power scene requirements are met.

Description

Technical Field

[0001] This invention belongs to, but is not limited to, the field of semiconductor technology, and particularly relates to a multifunctional integrated DIP-24 form factor intelligent power module. Background Technology

[0002] Power semiconductor devices are primarily used for the conversion, regulation, and control of electrical energy. They are key functional units in power electronic systems and are widely used in industrial automation, electric drives, home appliances, new energy equipment, and transportation. A typical power electronic system usually consists of a power supply side, a power conversion unit, and a load side. Power semiconductor devices achieve efficient transfer and modulation of electrical energy from the power source to the load by controlling voltage, current, and power flow. Therefore, their performance and packaging directly affect the system's safety, reliability, and integration.

[0003] As applications evolve towards higher voltage levels and higher power densities, single power chips are no longer sufficient to meet the integrated needs of multi-channel power control, drive management, and protection functions. Fully controllable power devices, such as IGBTs, have become the mainstream choice for medium-to-high power applications due to their combination of high voltage withstand capability and excellent switching characteristics. However, in practical applications, IGBT devices typically need to work in conjunction with anti-parallel freewheeling diodes, drive circuits, and protection circuits, which places higher demands on the chip layout, interconnect structure, and pin assignment within the package.

[0004] In the prior art, US9041183B2 discloses a double-sided cooling power module packaging structure. This scheme pairs IGBT bare chips and diode bare chips and clamps the chips with two direct copper-clad substrates, achieving double-sided heat dissipation of the power chip. This technology mainly optimizes the heat dissipation path and thermal management efficiency of power devices and is suitable for the high-efficiency cooling requirements of power switching units.

[0005] However, the existing solution's packaging structure mainly revolves around a single pair of IGBTs and diodes as a power switching unit, with the functional level concentrated on the power stage itself. The module lacks integrated design of driver chips, control chips, and other functional units. This structural characteristic makes the solution more suitable for low-complexity power module forms, and it is difficult to achieve the coordinated layout and interconnection of multiple IGBTs, multiple freewheeling diodes, and driver and management chips within the same package.

[0006] Meanwhile, this solution relies on the upper and lower substrate clamping structure for electrical connection and heat dissipation, and does not provide a solution for the problem of complex interconnection between multiple chips through a bonding wire network under a single lead frame condition, nor does it consider functional mapping and partitioning management of pin resources in a standardized, small-size package. Therefore, in application scenarios that require high functional density and high integration power modules within a limited number of pins and package volume, the existing technology still suffers from significant structural adaptability and limited integration capabilities. Summary of the Invention

[0007] To address the problems existing in the prior art, the present invention provides a multifunctional integrated DIP-24 form factor intelligent power module.

[0008] This invention is implemented as follows: a multifunctional integrated DIP-24 form factor intelligent power module, the package structure including a lead frame, a molding compound, and multiple semiconductor chips, characterized in that the package structure includes pins 2 to 25; the BSD chip is connected to pins 2 to 12, and the first IGBT chip to the third IGBT chip via bonding wires; the IC chip is connected to pins 13 to 20, and the fourth IGBT chip to the sixth IGBT chip via bonding wires; each IGBT chip is connected to a corresponding FRD chip and functional pins via bonding wires. Each basic module contains one BSD chip, one IC chip, six IGBT chips, and six FRD chips, and the back sides of all semiconductor chips are soldered to the lead frame.

[0009] Furthermore, the number of BSD chips and IC chips can be set to one or more depending on the power requirements. When there are multiple chips, they are connected to the corresponding pins and IGBT chips through independent bonding wire networks.

[0010] Furthermore, in the packaging structure, the back of the IGBT semiconductor chip is soldered onto the lead frame, and the front is electrically connected to the BSD chip, IC chip, and corresponding FRD chip through bonding wires.

[0011] Furthermore, there are six IGBT semiconductor chips, which are arranged in pairs with the FRD chips.

[0012] Furthermore, the number of FRD semiconductor chips is the same as the number of IGBT chips. The back of each FRD chip is soldered onto the lead frame, and the front is connected to the corresponding IGBT chip and functional pins through bonding wires.

[0013] Furthermore, the BSD chip, IC chip, IGBT chip, FRD chip, and pins are arranged in a chip area-pin area pattern on the lead frame: the chip area is located in the middle of the lead frame, and the pin area is arranged around the chip area; the IGBT chip and the corresponding FRD chip are arranged in pairs, one next to each other, and arranged sequentially along the longitudinal direction of the lead frame.

[0014] Furthermore, the bonding wires adopt a layered staggered layout, with the power loop bonding wires and control loop bonding wires forming different height layers within the plastic package to avoid cross-interference; the length of the power loop bonding wires does not exceed 5mm, and the control loop bonding wires are kept away from high di / dt nodes.

[0015] Furthermore, the packaging structure uses a DIP-24 form.

[0016] Furthermore, the encapsulation body is made of epoxy encapsulation material, the lead frame is made of copper alloy material, and the bonding wires are made of copper wire, gold wire, aluminum wire, or alloy wire.

[0017] Another object of the present invention is to provide a power module, including a substrate and a power semiconductor device having the above-described packaging structure, wherein the power semiconductor device is mounted on the substrate.

[0018] Another object of the present invention is to provide a method for packaging and connecting a DIP-24 form factor IPM power module, comprising the following steps: Six IGBT chips and their corresponding six FRD chips are fixed to the power chip area of ​​the lead frame. At least one BSD chip and at least one IC chip are fixed to the control chip area of ​​the lead frame; The BSD chip is electrically connected to pins 2 to 12 and the first to third IGBT chips respectively via the first bonding wire group; The IC chip is electrically connected to pins 13 to 20 and the fourth to sixth IGBT chips respectively via the second bonding wire group; Each IGBT chip is bonded to its corresponding FRD chip and functional pins to form a complete power circuit. The bonded lead frame is encapsulated to obtain an IPM power module with a DIP-24 shape.

[0019] Furthermore, during the bonding process, the length of the power loop bonding wire is less than or equal to 5 mm to reduce the parasitic parameters of the power loop.

[0020] Furthermore, by setting a spatial isolation structure between the chip area and the pin area on the lead frame, the bonding wires of the control circuit can be kept away from the high current variation area of ​​the power circuit.

[0021] Based on the above technical solutions and the technical problems solved, the advantages and positive effects of the technical solution to be protected by this invention are as follows: This invention solves the problems of difficulty in integrating power devices and control devices and chaotic pin function allocation within the limited DIP-24 package size. By integrating BSD, IC, IGBT and FRD chips on the same lead frame and establishing clear bonding relationships, effective isolation and coordinated control of power drive and control signals are achieved, significantly improving module integration and system reliability. Compared with traditional discrete or low-integration solutions, this represents a significant structural improvement.

[0022] This invention solves the problems of limited driving capability, uneven current distribution, and insufficient driving redundancy of a single BSD chip. By setting up multiple BSD chips and establishing independent bonding networks for each, different power units can obtain more stable and targeted driving support, improving driving consistency and failure resistance under high current conditions, and achieving substantial improvements in reliability and scalability.

[0023] The technical solution of this invention addresses the problem of signal interference and control bottlenecks that can easily occur when a single IC chip controls multiple power devices simultaneously. By using multiple IC chips to control different IGBT units in groups, the functional partitioning and load distribution of the control logic are realized, effectively reducing control delay and crosstalk risks, and significantly improving the response speed and control accuracy of the module under complex operating conditions.

[0024] This invention solves the problems of uneven heat distribution and excessive stray parameters in power devices within a limited package space. By arranging IGBTs and FRDs in pairs adjacent to each other, the current commutation path is shortened and parasitic inductance is reduced, achieving a compact and symmetrical design of the power circuit. This results in significant technical effects in reducing switching losses and suppressing voltage spikes.

[0025] The technical solution of this invention addresses the problems of dispersed reverse recovery paths and low coordination efficiency with IGBTs in FRDs. By installing them in a one-to-one correspondence and forming a stable bonding relationship, the freewheeling path becomes more direct and controllable, improving reverse recovery characteristics and dynamic current distribution, and enhancing the operational stability and service life of the module under high-frequency and high-power conditions.

[0026] This invention solves the problems of wiring cross-interference and poor consistency that easily occur in multi-chip stacked packaging. By clearly defining the chip area and pin area on the lead frame and making the bonding paths orderly interleaved and mutually isolated, the risks of parasitic coupling and manufacturing deviations are effectively reduced, resulting in significant improvements in packaging consistency, yield, and electrical performance.

[0027] This invention addresses the problems of dispersed power devices and drive control circuits, complex internal connections, large parasitic parameters, and insufficient reliability in existing DIP series IPM power modules. It achieves an integrated layout of the power switching unit and control drive unit by highly integrating BSD chips, IC chips, IGBT chips, and FRD chips on a single lead frame. By defining the corresponding connection relationships between pins and chips, it effectively solves the problems of chaotic coupling between drive signals and power signals and inconsistent wiring in multi-chip modules, making the drive path clear and the control logic explicit, significantly improving the module's operational stability and consistency.

[0028] In terms of chip quantity and combination, a scalable structure with multiple BSDs, ICs, IGBTs, and FRDs is introduced, solving the problem of poor adaptability of traditional modules under different power levels and application scenarios. This allows the same packaging platform to flexibly cover various power requirements, reducing design and manufacturing costs. By directly soldering the back of the IGBT and FRD chips to the lead frame, the current loop and heat dissipation path are shortened, parasitic inductance and thermal resistance are reduced, and the switching characteristics and thermal management performance of the module are significantly improved.

[0029] Furthermore, by employing specific chip arrangement and bonding wire layout, interference from high-current loops on control signals is effectively suppressed, enhancing electromagnetic interference immunity and long-term operational reliability. While maintaining the standard DIP-24 package form, higher integration, superior electrical performance, and better system compatibility are achieved, representing significant advancements in structural design, performance optimization, and engineering practicality compared to existing technologies. Attached Figure Description

[0030] Figure 1 This is a top view of the product outline provided in an embodiment of the present invention; Figure 2 This is a front view of the product outline provided in an embodiment of the present invention; Figure 3 This is a reverse view of the product outline schematic diagram provided in the embodiment of the present invention; Figure 4 This is a side view of the product outline provided in an embodiment of the present invention; Figure 5 This is a single product framework diagram provided in an embodiment of the present invention; Figure 6 This is a product framework diagram provided in an embodiment of the present invention; Figure 7 This is a structural diagram of the power drive system provided in an embodiment of the present invention; Figure 8 This is a flowchart of the packaging and connection method of the DIP-24 form factor IPM power module provided in the embodiments of the present invention; In the diagram: 1. Molded package; 2. Pin; 3. IC chip; 4. IGBT chip; 5. FRD chip; 6. BSD chip; 7. Bonding wire. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0032] In this embodiment of the invention, the structural descriptions corresponding to the markings in the figure are as follows: (1) VSu - U-phase high-side IGBT drive floating power supply ground; (2) VBu - U-phase high-side IGBT drive floating power supply voltage; (3) VSv - V-phase high-side IGBT drive floating power supply ground; (4) VBv - V-phase high-side IGBT drive floating power supply voltage; (5) VSw - W-phase high-side IGBT drive floating power supply ground; (6) VBw - W-phase high-side IGBT drive floating power supply voltage; (7) UP - U-phase high-side signal input; (8) VP - V-phase high-side signal input; (9) WP - W-phase high-side signal input; (10) VCCh - high-side gate drive power supply voltage; (11) UN - U-phase low-side signal input; (12) VN - V-phase low-side signal input; (13) WN - W-phase low-side signal input; (14) VCCL - Low-side gate drive supply voltage; (15) VFO - Fault output; (16) CSC - External capacitor for short-circuit current detection input and low-pass filtering; (17) COM - Module common ground; (18) VOT - Temperature output terminal; (19) N - DC negative terminal; (20) W - W phase output; (21) V - V phase output; (22) UU phase output; (23) P - DC positive terminal; (24) P - DC positive terminal; like Figure 1 and Figure 5 As shown, the power module in this embodiment uses a single lead frame to carry multiple functional structures. Under the conditions of limited pin count and compact package size, the coordinated operation of multi-phase power drive and protection control is achieved through the overall planning of high-side floating power supply, high and low-side drive signals, power output terminal and detection feedback terminal.

[0033] Combination Figure 1 The external DC positive terminal of the module is connected via a DC positive pin, forming a corresponding DC bus positive structure within the lead frame; the DC negative terminal is introduced via a DC negative pin, forming the reference potential of the power circuit together with the module's common ground. The U-phase, V-phase, and W-phase output terminals are respectively connected to... Figure 5The corresponding power chip units are connected to form the power output path of the three-phase inverter.

[0034] like Figure 1 As shown, the high-side power devices of phases U, V, and W adopt a floating drive method, with their floating power supply voltage terminals and floating power supply ground terminals set in pairs and directly corresponding to each other. Figure 5 The area where the power chips of the upper and middle bridge arms are located. When the high-side power device of a certain phase is working, its drive circuit drifts synchronously with the output potential of the corresponding phase, so that the high-side gate drive is always based on a stable relative potential, thus reliably realizing the turn-on and turn-off control even under higher DC bus voltage conditions.

[0035] Regarding the control signal path, such as Figure 1 As shown, the high-side signal input terminal and the low-side signal input terminal have a clear partition on the pin side, and are connected accordingly. Figure 5 The control chip is located in different positions within the chip. After being processed by the internal logic of the control chip, the control signals are sent to the corresponding high-side or low-side power chips through independent bonding wire networks. This structure physically isolates the high-side control path, low-side control path, and power circuit at the lead frame level, preventing rapid voltage changes in the power circuit from coupling and interfering with the control signals.

[0036] like Figure 5 As shown, the power chip and its corresponding freewheeling diode for each phase are arranged in pairs on the lead frame, forming a power conduction and freewheeling loop through the shortest bonding path. When the power device is turned off, the load current can quickly establish a path through the corresponding freewheeling diode, thereby ensuring current continuity and suppressing voltage spikes. This power unit arrangement, in conjunction with the high-side floating drive structure, ensures stable three-phase power output under high-frequency switching conditions.

[0037] also, Figure 1 The short-circuit current detection terminal shown in the diagram works in conjunction with the internal detection structure of the module through an external capacitor to filter and sample abnormal current changes in the power circuit. When an abnormal state is detected, the control chip feeds back to the external system through the fault output terminal and simultaneously adjusts the internal drive state. The temperature output terminal reflects the internal thermal state of the module in real time, providing the external system with a basis for its operating status.

[0038] Through the overall coordination of the above structure and signal path, this embodiment forms a complete working mechanism in a single package in which power output, suspension drive, signal control and detection protection are mutually constrained. The parts are not independent combinations, but form an inseparable whole around the multi-phase power drive target.

[0039] like Figure 1As shown, the power semiconductor device packaging structure provided in this embodiment of the invention includes a lead frame, a molding compound 1, bonding wires 7, and a semiconductor chip. The packaging structure includes pins 2 to 25. The BSD chip 6 is connected to pins 2 to 12, and to the first to third IGBT chips 4, via bonding wires 7. The IC chip 3 is connected to pins 13 to 20, and to the fourth to sixth IGBT chips 4, via bonding wires 7. Each IGBT chip 4 is connected to the corresponding FRD chip 5 and functional pin 2 via bonding wires 7.

[0040] like Figure 5 As shown, in the packaging structure of the power semiconductor device provided by the present invention, the number of BSD chip 6 and IC chip 3 can be set to one or more according to the power requirements. When there are multiple chips, they are respectively connected to the corresponding pin 2 and IGBT chip 4 through an independent bonding wire network 7.

[0041] In the packaging structure of the power semiconductor device provided by the present invention, the back side of the IGBT chip 4 is soldered to the lead frame, and the front side is electrically connected to the soldering area of ​​the pins through bonding wires.

[0042] like Figure 6 As shown, in the packaging structure of the power semiconductor device provided by the present invention, there are 6 IGBT chips 4, which are arranged in pairs with FRD chips 5 in a one-to-one correspondence, and are arranged sequentially along the longitudinal direction of the lead frame.

[0043] In the packaging structure of the power semiconductor device provided by the present invention, the back side of the FRD chip 5 is soldered to the lead frame, and the front side is connected to the corresponding IGBT chip 4 and functional pin 2 through bonding wires.

[0044] BSD chip 6, IC chip 3, IGBT chip 4, FRD chip 5 and pin 2 are arranged in a “chip area-pin area” partition on the lead frame. The bonding wires adopt a layered staggered layout, and the power circuit bonding wires and the control circuit bonding wires form different height layers in the plastic package.

[0045] The multifunctional integrated DIP-24 form factor intelligent power module of this invention integrates a BSD chip 6, an IC chip 3, six IGBT chips 4, and six FRD chips 5 on a single lead frame, enabling the power switching unit and drive control unit to work collaboratively within the same package. During module operation, the external control circuit first inputs PWM control signals and power signals from each functional pin 2 to the BSD chip 6 and IC chip 3. The BSD chip 6 is connected to pins 1 to 11 and the first to third IGBT chips 4, while the IC chip 3 is connected to pins 12 to 19 and the fourth to sixth IGBT chips 4, respectively driving and controlling the two sets of IGBT power devices. Internally, the BSD chip 6 and IC chip 3 output corresponding gate drive signals based on the input control signals and operating power, which are sent to the gate electrodes of each IGBT chip 4 via bonding wires, causing the IGBT chips to turn on or off according to a predetermined timing sequence. This generates the required voltage and current waveforms at the power output terminal, realizing power conversion and modulation for motors or other loads.

[0046] Each IGBT chip 4 is directly soldered to the lead frame on its back side, forming a low thermal resistance and low parasitic inductance current path and heat dissipation path. Its front side, in addition to being electrically connected to the BSD and IC chips via bonding wires, is also connected to the corresponding FRD chip 5 and external functional pin 2 via bonding wires. The FRD chip 5 and its respective IGBT chip 4 form a freewheeling circuit. When the IGBT is turned off or the load current changes in reverse, the FRD provides a freewheeling current path, suppressing voltage spikes and improving electromagnetic compatibility performance and device reliability during switching. Through a partitioned chip layout and a layered, staggered bonding wire design, the control pins and power pins are rationally partitioned within the DIP-24 package. This shortens the electrical paths of the power and drive circuits, reducing parasitic inductance and noise coupling. Furthermore, it facilitates insulation isolation and wiring optimization between the control and high-current terminals during system design. Overall, this invention module achieves integrated packaging of power devices, freewheeling diodes, and drive control chips while maintaining the standard DIP-24 form factor and pin spacing, thus comprehensively optimizing the IPM module in terms of size, heat dissipation, switching losses, and system integration.

[0047] In the packaging structure of the power semiconductor device provided by this invention, the BSD and IC semiconductor chips are multi-terminal active devices. Their front side has all functional electrodes, including input, output, and control terminals, while the back side only provides support and heat dissipation. The input terminal is soldered to the lead frame, the output terminal is electrically connected to the soldering area of ​​the pin via bonding wires, and the control terminal is electrically connected to the soldering area of ​​the pin via bonding wires. The IGBT chip 4 is a three-terminal active device, with input and control terminals on the front side and an output terminal on the back side. The input terminal is soldered to the lead frame, and the output terminal is electrically connected to the soldering area of ​​the pin via bonding wires. The FRD chip 5 is a two-terminal active device, with the front side being the anode and the back side being the cathode. The FRD chip 5 connects to the corresponding IGBT chip 4 and functional pin 2.

[0048] In the packaging structure of the power semiconductor device provided by the present invention, the molding compound 1 is made of epoxy molding material, the lead frame is made of copper alloy material, and the bonding wire 7 is made of copper wire, gold wire, aluminum wire or alloy wire.

[0049] The present invention also relates to a power module comprising a substrate and a power semiconductor device having a package structure of a power semiconductor device as described above, the power semiconductor device being mounted on the substrate.

[0050] Example 1: Implementation of the Basic DIP-24 Three-Phase Power Module Structure In this embodiment, the lead frame forms pins two through twenty-fifth pins, and six IGBT chips and six FRD chips are arranged in pairs adjacent to each other within the power chip area of ​​the lead frame. The BSD chip and IC chip are respectively fixed to the control chip area, and are electrically connected to different pin areas and different IGBT chips through two sets of independent bonding wire networks. This structure achieves partitioned driving of the upper and lower bridge arm power units without increasing the number of pins, ensuring clear logic and non-interference between the power circuit and the control circuit within the package, verifying the feasibility of this packaging mechanism in the DIP-24 form factor.

[0051] Example 2: Implementation of Redundant Driver for Multiple BSD Chips In this embodiment, two BSD chips are used, each corresponding to a different subset of IGBT chips. Each BSD chip is connected to its corresponding pin group and IGBT chip via an independent bonding wire network. This arrangement ensures that even if one BSD chip fails, the remaining BSD chips can still maintain the normal operation of some power units, improving the overall reliability of the module. This embodiment demonstrates that the distributed configuration of the control chips and the pin mapping mechanism are not simply superimposed, but rather form a complementary and fault-tolerant collaborative mechanism.

[0052] Example 3: Implementation of Logic Sharing for Multiple IC Chips In this embodiment, the control chip unit includes two IC chips, each responsible for the logic control and status acquisition of different bridge arms. Each IC chip is connected to different pin sets and different IGBT chip groups. This structure effectively reduces the logic load on a single IC chip, improves the response consistency of drive signals, and verifies the technical effectiveness of control loop partitioning mapping in a highly integrated package.

[0053] Example 4: Implementation of the Shortest Loop Arrangement for IGBT-FRD In this embodiment, each pair of IGBT chips and FRD chips are arranged adjacent to each other on the lead frame, and the two are connected by the shortest bonding wire to form a freewheeling path. Compared with the unpaired distributed arrangement, this structure significantly shortens the power loop path length, reduces parasitic inductance and switching overshoot, and demonstrates the technical contribution of the paired arrangement of power chips and the co-design of the lead frame at the packaging level.

[0054] Example 5: Layered Implementation of Power and Control Circuits In this embodiment, by setting a spatial isolation structure between the chip area and the pin area on the lead frame, the power loop bonding wires are concentrated in the lower layer area, while the control loop bonding wires are arranged in the upper layer area away from nodes with high current changes. This layered structure forms a clear electromagnetic isolation path within the plastic package, significantly suppressing the problem of control signals being interfered with by power switches, demonstrating the stability of this packaging mechanism in practical applications.

[0055] Example 6: Implementation of System-Level Driver Applications In this embodiment, the IPM power module is integrated into a power drive system. An external control unit sends drive and protection signals to the control chip unit via pins. The control chip unit, based on its internal pin partitioning mapping, controls the corresponding IGBT chips to turn on and off, completing the power conversion output. During system operation, no malfunctions caused by pin reuse or packaging interference occurred, indicating that the module structure is not only feasible at the packaging level but also possesses stable collaborative operation capabilities at the system level.

[0056] Example 7: DIP-24IPM Module with Single BSD + Single IC In this embodiment, a standard DIP-24 package size copper alloy leadframe is selected to form several island-shaped carrier areas in the chip area and pins 1 to 24 in the pin area. A BSD chip, an IC chip, six IGBT chips, and six FRD chips are sequentially die-bonded to the corresponding leadframe island areas using silver paste or low-melting-point solder. The six IGBT chips correspond one-to-one with the six FRD chips, arranged in adjacent pairs. Aluminum-gold wire bonding is used: the BSD chip is sequentially connected to pins 1 to 11 and the gate / detector terminals of the first to third IGBT chips; the IC chip is sequentially connected to pins 12 to 19 and the gate / detector terminals of the fourth to sixth IGBT chips; the front electrode of each FRD chip is connected to the collector node and corresponding functional pin 2 of the corresponding IGBT chip via gold wire, while the back electrode is directly connected to the power node island area of ​​the leadframe. After bonding is completed, the bonding area is filled with resin and encapsulated to form an integral DIP-24 encapsulation structure, which enables electrical isolation and mechanical support between the chip area and the pin area inside the package.

[0057] In this embodiment, the BSD chip primarily handles undervoltage lockout and overcurrent detection protection functions, while the IC chip provides PWM drive and logic control functions. Six IGBTs and six FRDs constitute the upper and lower bridge arm power units of the three-phase inverter. By partitioning the power island and control island on the lead frame and layering and staggering the bonding wire routing within the plastic package 1, the loop area of ​​the power circuit is minimized, and the drive and detection signal lines are kept away from high di / dt nodes. This achieves high integration of multiple chips and low parasitic parameters within a limited DIP-24 package. This embodiment can operate stably at switching frequencies of tens of kilohertz, verifying the feasibility and manufacturability of the above-described package structure for multi-chip collaborative arrangement, bonding network planning, and pin assignment schemes, providing a foundation for variations with higher integration.

[0058] Example 8: Optimized Layout Module with Dual BSD + Dual ICs and Multiple IGBT / FRD Pairs In this embodiment, using the same DIP-24 lead frame as in Embodiment 1, two BSD chips and two IC chips are used, with the six IGBT chips and six FRD chips still arranged in pairs. Specifically, the first BSD chip is fixed in the chip island area near the first to sixth pins, mainly connected to the first to third IGBT chips and their corresponding pins through an independent bonding network, used for undervoltage and overcurrent detection and soft shutdown control of these three power units; the second BSD chip is fixed in the island area near the seventh to eleventh pins, establishing independent protection and status feedback paths with the fourth to sixth IGBT chips respectively. The first IC chip is fixed in the middle-left position of the lead frame, connected to the twelfth to fifteenth pins and the corresponding IGBT gate electrodes, mainly responsible for low-side drive control; the second IC chip is fixed in the middle-right position, connected to the sixteenth to nineteenth pins and the corresponding IGBT chip gates, responsible for high-side drive and logic isolation functions. By using this multi-chip grouping layout, the signal lines of different functional units are concentrated in a local area, avoiding the problems of redundant wiring and signal crosstalk caused by a single chip controlling multiple power devices.

[0059] In terms of power device arrangement, six IGBT chips and six FRD chips are arranged in pairs ("IGBT+FRD") along the longitudinal direction of the lead frame. Each pair of devices is adjacent to each other on the plane, and the corresponding collector and emitter / cathode nodes are directly connected by short bonding wires or transferred through a common power island, compressing the commutation loop of each phase bridge arm as much as possible within a local area. The chip area and the pin area are physically separated on the lead frame by a stepped structure or insulating gap. All fine wire bonding paths from BSD and IC are staggered within the molding compound 1 through different height levels and preset routing windows, ensuring that bonding wires with different functions avoid each other in three-dimensional space to prevent short circuits or severe electromagnetic coupling. In mass production verification, this embodiment maintains small switching spikes and uniform temperature rise distribution even under higher bus voltage and larger output current conditions, proving that multi-BSD, multi-IC group control, IGBT / FRD pair arrangement, and chip area-pin area separation design can effectively improve the reliability, scalability, and packaging consistency of the module, thereby fully supporting the requirements of the aforementioned overall technical solution.

[0060] In the description of this invention, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," "front end," "rear end," "head," "tail," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first," "second," "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0061] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications, equivalent substitutions, and improvements made by those skilled in the art within the scope of the technology disclosed in the present invention, and within the spirit and principles of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A DIP-24 shaped IPM power module, characterized in that, It includes a lead frame, a molding compound, and a power chip unit and a control chip unit disposed on the lead frame; The lead frame forms the second to the twenty-fifth pins; The power chip unit includes six IGBT chips and six FRD chips arranged in a one-to-one correspondence with the IGBT chips. The control chip unit includes at least a BSD chip and an IC chip; in, The BSD chip establishes electrical connections with the second to twelfth pins and the first to third IGBT chips simultaneously through the first set of bonding wires, which is used to realize the driving and protection control of the upper bridge arm power unit. The IC chip establishes electrical connections with pins 13 to 20 and the fourth to sixth IGBT chips simultaneously through the second set of bonding wires, which is used to realize the driving and logic control of the lower bridge arm power unit. Each IGBT chip forms a complete power conduction and freewheeling path with the corresponding FRD chip and at least one functional pin through bonding wires; Each chip is fixed to the lead frame on the back and encapsulated by a plastic package to form a DIP-24 package structure. This enables partitioning and collaborative operation of the power circuit and control circuit under limited pin count conditions.

2. The IPM power module as described in claim 1, characterized in that, The BSD chip consists of two or more chips, each fixed at a different position on the lead frame, and electrically connected to the corresponding pin group and IGBT chip through an independent bonding wire network to form a distributed drive and redundancy protection mechanism.

3. The IPM power module as described in claim 1, characterized in that, The IC chip consists of two or more chips, with different IC chips corresponding to different pin sets and different IGBT chip groups, used to realize the functional sharing and load separation of control logic.

4. The IPM power module as described in claim 1, characterized in that, The IGBT chip and the corresponding FRD chip are arranged in pairs adjacent to each other on the lead frame, so that the power conduction path and the freewheeling path form the shortest closed loop in space, thereby reducing parasitic inductance.

5. A power drive system, characterized in that, Includes an external control unit and an IPM power module as described in any one of claims 1 to 4; The external control unit provides control signals to the control chip unit through the second to twenty-fifth pins of the IPM power module; The control chip unit performs driving and protection control on the upper and lower IGBT chips respectively according to the pin partition mapping relationship. The power chip unit completes multi-phase power output under the coordinated action of the control chip unit. This enables a highly integrated power drive system within a DIP-24 package.

6. The power drive system as described in claim 5, characterized in that, The power drive system is used for three-phase inverter output in motor drive, frequency conversion control, or power conversion application scenarios.

7. The power drive system as described in claim 5, characterized in that, The power circuit and control circuit inside the IPM power module are arranged in a layered wiring structure within the plastic package, keeping the control circuit away from nodes with high current changes.

8. A method for packaging and connecting a DIP-24 form factor IPM power module, characterized in that, Includes the following steps: Six IGBT chips and their corresponding six FRD chips are fixed to the power chip area of ​​the lead frame. At least one BSD chip and at least one IC chip are fixed to the control chip area of ​​the lead frame; The BSD chip is electrically connected to pins 2 to 12 and the first to third IGBT chips respectively via the first bonding wire group; The IC chip is electrically connected to pins 13 to 20 and the fourth to sixth IGBT chips respectively via the second bonding wire group; Each IGBT chip is bonded to its corresponding FRD chip and functional pins to form a complete power circuit. The bonded lead frame is encapsulated to obtain an IPM power module with a DIP-24 shape.

9. The method as described in claim 8, characterized in that, During the bonding process, the length of the power loop bonding wire is less than or equal to 5 mm to reduce the parasitic parameters of the power loop.

10. The method as described in claim 8, characterized in that, By setting a spatial isolation structure between the chip area and the pin area on the lead frame, the bonding wires of the control circuit are kept away from the high current variation area of ​​the power circuit.

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