Photoelectric device, preparation method, power utilization device and power generation device

Abstract

The invention relates to a photoelectric device, a preparation method, a power utilization device and a power generation device. The photoelectric device comprises a perovskite layer, wherein the perovskite layer comprises a first perovskite material; the perovskite layer is provided with a first surface and a second surface which are deviated from each other in the thickness direction of the perovskite layer, the perovskite layer comprises a first region located near the first surface and a second region located at a bulk phase part of the perovskite layer, and the first region is located between the first surface and the second region; the conduction band bottom, the Fermi level and the valence band top of the first perovskite material in the first region move upwards (when the first surface is used for transmitting electrons) or move downwards (when the first surface is used for transmitting holes) relative to the first perovskite material in the second region, and at least one movement amplitude is greater than or equal to 0.08 eV; and the energy level change amplitudes of at least two of the conduction band bottom, the valence band top and the band gap are relatively small. The photoelectric device has relatively high energy conversion efficiency.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device technology, and further to optoelectronic devices, preparation methods, electrical devices, and power generation devices. Background Technology

[0002] Optoelectronic devices are a class of devices that utilize photoelectric conversion mechanisms to perform photoelectric conversion. They can convert light energy into electrical energy for use in photovoltaics, or electrical energy into light energy for use in displays, lighting, and other fields. Accordingly, optoelectronic devices can be either photovoltaic devices or light-emitting devices. Taking photovoltaic devices as an example, as a highly efficient device that directly converts solar energy into electrical energy, they have been widely used in many fields. For instance, they are widely used on the rooftops of residential, commercial, and industrial buildings to form distributed photovoltaic power generation systems, or combined with energy storage devices for off-grid power systems, or integrated into portable electronic devices to provide power support for outdoor scenarios.

[0003] The core functional layer for photoelectric conversion in photovoltaic devices is the light-absorbing layer. Representative photovoltaic devices include crystalline silicon solar cells and perovskite solar cells. In perovskite solar cells, the light-absorbing layer is a perovskite layer containing perovskite material. Due to their high conversion efficiency and the ability to be fabricated using low-cost solution methods, perovskite solar cells have attracted widespread attention from the industry. Photoelectric conversion efficiency is crucial for the practical application of perovskite solar cells. Therefore, researching ways to improve the energy conversion efficiency of photovoltaic devices is of great significance. Summary of the Invention

[0004] According to various embodiments and examples of this application, this application provides information relating to optoelectronic devices, fabrication methods, electrical devices, and power generation devices. The optoelectronic device exhibits high energy conversion efficiency.

[0005] In some embodiments of the first aspect of this application, an optoelectronic device is provided, which includes a perovskite layer comprising a first perovskite material; the perovskite layer has a first surface and a second surface that are opposite to each other in the thickness direction of the perovskite layer; the thickness direction of the perovskite layer is denoted as the Z direction;

[0006] There is a first region with a thickness of 5nm to 10nm extending 20nm from the first surface along the Z direction toward the interior of the perovskite layer; there is a second region with a thickness of 5nm to 10nm extending 10nm from the center of the thickness of the perovskite layer toward the first surface and the second surface, respectively; the first region is located between the first surface and the second region.

[0007] Let A denote the energy difference between the valence band peaks of the first perovskite material in the first region and those in the second region. Δ Let B be the energy level difference between the Fermi level of the first perovskite material in the first region and that of the first perovskite material in the second region. Δ Let C be the energy level difference between the conduction band bottom of the first perovskite material in the first region and that in the second region. Δ ;

[0008] The perovskite layer satisfies at least two of the following three characteristics:

[0009] (t1)A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV;

[0010] (t2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV;

[0011] (t3) The absolute value of the band gap difference between the first perovskite material in the first region and the first perovskite material in the second region is less than or equal to 0.02 eV;

[0012] When the first surface is used for electron transport, A Δ B Δ and C Δ Each is independently greater than 0 eV, and A Δ B Δ and C Δ At least one of them is greater than or equal to 0.08 eV; or,

[0013] When the first surface is used to transmit holes, A Δ B Δ and C Δ Each is independently less than 0 eV, and A Δ B Δ and C Δ At least one of them is less than or equal to -0.08 eV.

[0014] This optoelectronic device features a perovskite layer with a unique interface energy level structure.

[0015] When the first surface is used for electron transport, the perovskite layer includes a first region located near one side surface and a second region located in the bulk phase portion of the perovskite layer. The conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are shifted upwards relative to the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the second region, respectively, corresponding to C... Δ BΔ and A Δ Each independently greater than 0 eV is beneficial for generating band bending and the resulting interfacial electric field at the interface, thereby reducing electron accumulation caused by interfacial energy level mismatch and improving the electron carrier transport capability. Simultaneously, the energy level changes of at least two of the conduction band bottom, valence band top, and band gap of the perovskite material in the first region are relatively small, corresponding to the perovskite layer satisfying at least two of the following characteristics (t1), (t2), and (t3). This means that the energy level changes of the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are approximately the same as those in the second region. Correspondingly, the energy level distances between the conduction band bottom, Fermi level, and valence band top do not change significantly. This helps to stabilize the carrier concentration in the overall perovskite layer structure, making it easier for carriers to remain in a stable state during carrier transport, thereby further improving the stability of the carrier transport interface; further controlling A Δ B Δ and C Δ At least one of the energy levels has a relatively high value, causing a relatively large upward shift in the energy level structure of the first region. This facilitates the formation of energy level bending, which prevents charge accumulation at the interface and promotes efficient carrier transport, thus contributing to the relative stability of the electron concentration in the overall structure. Therefore, optoelectronic devices exhibit high energy conversion efficiency. It is understandable that we do not wish to be limited to the aforementioned theory.

[0016] When the first surface is used for hole transport, the tantalum layer includes a first region located near one side surface and a second region located in the bulk phase portion of the perovskite layer. The conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are respectively shifted downwards relative to the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the second region, corresponding to C... Δ B Δ and A ΔEach independently less than 0 eV is beneficial for generating band bending and the resulting interfacial electric field at the interface, thereby reducing hole accumulation caused by interfacial energy level mismatch and improving the hole carrier transport capability. Simultaneously, the energy level changes of at least two of the conduction band bottom, valence band top, and band gap of the perovskite material in the first region are relatively small, corresponding to the perovskite layer satisfying at least two of the following characteristics (t1), (t2), and (t3). This means that the energy level changes of the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are approximately the same as those in the second region, and correspondingly, the energy level distances between the conduction band bottom, Fermi level, and valence band top do not change significantly. This helps to stabilize the carrier concentration in the overall perovskite layer structure, making it easier for carriers to remain in a stable state during carrier transport, thereby further improving the stability of the carrier transport interface; further controlling A Δ B Δ and C Δ At least one of them has a relatively high value, which makes the energy level structure of the first region shift down relatively significantly, which is conducive to the formation of a certain energy level bending. The bending of the energy level can avoid the accumulation of charge at the interface and promote the effective transport of charge carriers, thus contributing to the relative stability of the electron concentration in the overall structure; thus, the optoelectronic device has a high energy conversion efficiency.

[0017] It's understandable that they don't want to be limited to the aforementioned theories.

[0018] In some embodiments of this application, the perovskite layer satisfies at least one of the following three characteristics:

[0019] (a1)A Δ and B Δ The absolute value of the difference is less than or equal to 0.03 eV;

[0020] (a2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.03 eV;

[0021] (a3)A Δ and C Δ The absolute value of the difference is less than or equal to 0.03 eV.

[0022] By controlling the perovskite layer to satisfy at least two of the following characteristics (a1), (a2) and (a3), it is beneficial to better control the stability of the carrier concentration in the overall structure of the perovskite layer, to better improve the stability of the carrier transport interface, and thus to better optimize the energy conversion efficiency.

[0023] In some embodiments of this application, when the first surface is used for electron transport, A Δ B Δ and C Δ One, two, or three of them are 0.08 eV to 0.35 eV;

[0024] Optionally, A Δ B Δ and C Δ One, two, or three of them are 0.14eV to 0.30eV.

[0025] By controlling B Δ A Δ C Δ One or more of these factors, within the aforementioned range, can control the overall upward shift of the energy level structure of the perovskite material in the first region of the perovskite layer. By controlling the overall upward shift of the energy level structure within the aforementioned range, efficient electron transport and stable interface connection at the interface between the perovskite layer and the adjacent functional layer can be better achieved, which is beneficial to improving energy conversion efficiency.

[0026] In some embodiments of this application, when the first surface is used to transmit holes, A Δ B Δ and C Δ One, two, or three of them are between -0.35 eV and -0.08 eV;

[0027] Optionally, A Δ B Δ and C Δ One, two, or three of them are between -0.30 eV and -0.14 eV.

[0028] By controlling A Δ B Δ C Δ One or more of these factors, within the aforementioned range, can control the overall downward shift of the energy level structure of the perovskite material in the first region of the perovskite layer. By controlling the overall upward shift of the energy level structure within the aforementioned range, efficient hole transport and stable interface connection at the interface between the perovskite layer and the adjacent functional layer can be better achieved, which is beneficial to improving energy conversion efficiency.

[0029] In some embodiments of this application, the optoelectronic device satisfies one or more of the following features:

[0030] (z1) The band gap of the first perovskite material in the second region is 1.2 eV to 2.2 eV, and can be selected as 1.2 eV to 2.0 eV;

[0031] (z2) The Fermi level of the first perovskite material in the second region is -3.0eV to -5.5eV, and can be selected as -3.7eV to -5.0eV, based on the vacuum level.

[0032] The aforementioned energy level modulation method can be universally applied to various first perovskite materials with different band gaps (e.g., band gaps of 1.2 eV to 2.2 eV). By controlling the band gap of the first perovskite material in the second region within the above range, it is possible to cover most of the visible light and part of the near-infrared light region in the solar spectrum, enabling the first perovskite material to absorb a wider range of solar spectra, thereby improving the generation efficiency of photogenerated carriers and further improving the energy conversion efficiency of optoelectronic devices.

[0033] The aforementioned energy level modulation method can be universally applied to a variety of first perovskite materials with different Fermi levels (e.g., Fermi levels ranging from -3.0 eV to -5.5 eV). By controlling the Fermi level of the first perovskite material in the second region within the above range, the first perovskite material can be kept at a suitable energy level. This allows for the control of a suitable carrier concentration to achieve good electrical conductivity, while also maintaining a good crystal structure and photoelectric properties.

[0034] In some embodiments of this application, a region extending 5nm~10nm from the first surface at a distance L3 within the perovskite layer along the Z direction toward the first surface is designated as the third region, where L3≥30nm; the third region is located between the first region and the second region;

[0035] The difference in Fermi level between the first perovskite material in the third region and the first perovskite material in the second region is denoted as B. 32 ,

[0036] Wherein, when the first surface is used for electron transport, 0.1 eV ≤ B 32 <0.30eV; or,

[0037] When the first surface is used for hole transport, -0.30 eV 32 ≤-0.10eV;

[0038] Optionally, L3 is a value selected from 30nm to 100nm.

[0039] The energy level modulation depth at the first surface of the perovskite layer can reach L3. Reaching this modulation depth is conducive to forming an electric field bending at the interface of the first surface that is beneficial to charge transport, thereby extracting the charge from the perovskite layer more effectively and improving the energy conversion efficiency.

[0040] ​In some embodiments of this application, the thickness of the perovskite layer is 200nm~1500nm, and can be selected as 400nm~1000nm.

[0041] When the thickness of the perovskite layer is within the aforementioned range, taking photovoltaic devices as an example, it can not only enable the perovskite layer to have high light absorption capacity, achieve better short-circuit current density and open-circuit voltage, but also help to better match the thickness of the perovskite layer with the effective diffusion length of photogenerated carriers, thereby enabling the carriers to be collected more effectively, which is conducive to achieving higher energy conversion efficiency overall.

[0042] In some embodiments of this application, the perovskite layer further includes a first additive located in a region of the perovskite layer near the first surface; the first additive is an inorganic material.

[0043] Optionally, the first additive includes one or more of alkali metal halides, metal oxides, sulfides, metal nitrides, germanates, and carbonates;

[0044] Further optionally, the alkali metal element in the metal halide includes one or more of Li, Na, K, and Cs; the halogen in the metal halide includes one or more of F, Cl, Br, and I; the metal oxide includes one or more of Al2O3, V2O5, Ta2O5, SrTiO3, Co3O4, and Fe2O3; the sulfide includes one or more of MoS2, WS2, SnS2, and CS2; the metal nitride includes aluminum nitride; the germanate includes Zn2GeO4; and the carbonate includes Li2CO3.

[0045] The crystal structure of the aforementioned first additive has a specific dipole moment and dielectric constant, which can form a suitable dipole at a thickness that allows carrier tunneling, thereby promoting efficient charge transport.

[0046] In some embodiments of this application, the perovskite layer satisfies any one of the following characteristics:

[0047] (i) The first additive includes at least one of Cl and Br elements;

[0048] Optionally, the second surface is used for light incident, and the first surface is used for electron transport; this is beneficial for the perovskite layer and the adjacent functions on the first surface side to have better energy level matching, thereby improving the ability of the interface to transport electrons, improving the ability of the interface at the first surface to collect photogenerated carriers (electrons) near the second surface, and improving the photoelectric conversion efficiency.

[0049] (ii) The first additive includes at least one of the elements I;

[0050] Optionally, the second surface is used for light incident, and the first surface is used for hole transport. In this case, it is beneficial to make the adjacent functions of the perovskite layer and the first surface side have better energy level matching, thereby improving the ability of the interface to transport holes, improving the ability of the interface at the first surface to collect photogenerated carriers (holes) near the second surface, and improving the photoelectric conversion efficiency.

[0051] In some embodiments of this application, the Moran index of the potential distribution of the first surface is less than or equal to 0.35, and optionally less than or equal to 0.20; wherein the potential of the first surface is obtained by measuring the potential of the first surface using a Kelvin atomic force microscope.

[0052] A relatively low Moran index indicates a more uniform potential distribution. By controlling the potential distribution of the first surface within the aforementioned range, it is beneficial to achieve a more uniform potential distribution, which in turn is beneficial to achieve more uniform charge transport. It is also beneficial to achieve more efficient and uniform charge extraction at the interface of the first surface, which can more effectively suppress local accumulation and local damage of interface charge, thereby improving energy conversion efficiency.

[0053] In some embodiments of this application, the area of ​​the perovskite layer on a projection plane perpendicular to the Z direction is greater than or equal to 0.09 cm². 2 Optionally, greater than or equal to 1m 2 .

[0054] The aforementioned energy level modulation of the perovskite layer can be achieved over a relatively large area. Furthermore, the energy level modulation described above can be uniformly achieved over a relatively large area, which is beneficial for improving the energy conversion efficiency of large-area devices. In addition, it is also beneficial for improving the performance stability of large-area devices.

[0055] In some embodiments of this application, the optoelectronic device includes a photovoltaic device or a light-emitting device. The aforementioned perovskite layer can be used in photovoltaic devices or light-emitting devices to help improve the energy conversion efficiency of photovoltaic devices or light-emitting devices.

[0056] In some embodiments of this application, the optoelectronic device includes a photovoltaic device, with the second surface being the light-incident side. In this case, light is primarily incident from the second surface, and the perovskite layer is excited by photons to generate charge carriers mainly near the second surface. One of the photogenerated charge carriers is transported to the corresponding electrode on the first surface and collected. Controlling the energy level structure difference between the first and second regions helps improve the transport of charge carriers toward the second surface, thereby improving the photoelectric conversion efficiency of the optoelectronic device. Furthermore, it can also improve device stability.

[0057] In some embodiments of this application, the optoelectronic device includes a photovoltaic device; the photovoltaic device includes a solar cell, and the solar cell includes the perovskite layer.

[0058] The aforementioned perovskite layer can be incorporated into solar cells to improve their photoelectric conversion efficiency. Furthermore, it can also enhance device stability.

[0059] In some embodiments of this application, the optoelectronic device includes a solar cell, which is a multi-junction solar cell, and the multi-junction solar cell includes a first cell unit, which includes the perovskite layer.

[0060] The aforementioned perovskite layer can be incorporated into multi-junction solar cells to improve their photoelectric conversion efficiency. Furthermore, it can also enhance device stability.

[0061] In some embodiments of this application, the multi-junction solar cell further includes a second cell stacked with the first cell; the second cell and the first cell are connected by an interconnect layer, or the second cell and the first cell are isolated by an insulating layer; the second cell includes a second light-absorbing layer, and the band gap of the second light-absorbing layer is different from that of the perovskite layer.

[0062] By setting up multiple light-absorbing layers with different band gaps (including a perovskite layer and a second light-absorbing layer), multi-junction solar cells can effectively absorb light of different wavelengths, broadening the spectral range of light absorbed by multi-junction solar cells and improving their photoelectric conversion efficiency.

[0063] In some embodiments of this application, the second light-absorbing layer in the second battery cell includes a semiconductor active material, which includes one or more of the following: a second perovskite material, a silicon-containing semiconductor material, copper zinc tin sulfide, copper zinc tin selenide, copper zinc tin selenide sulfide, copper indium gallium selenide, copper indium gallium diselenide, copper indium selenide, cadmium telluride, gallium arsenide, and organic active materials.

[0064] The aforementioned embodiments can be universally applied to the aforementioned different types of multi-junction solar cells.

[0065] In some embodiments of this application, the multi-junction solar cell includes a first electrode, a perovskite layer, an interconnect layer, a second light-absorbing layer, and a second electrode stacked together; wherein the interconnect layer is located between the perovskite layer and the second light-absorbing layer; the first electrode is located on the side of the perovskite layer opposite to the interconnect layer, and the second electrode is located on the side of the second light-absorbing layer opposite to the interconnect layer. Thus, the two cell units in the multi-junction solar cell are connected through the interconnect layer to achieve current matching between the two cell units. This results in a relatively smaller size, the ability to absorb light of different wavelengths, a wider absorption spectrum range for the multi-junction solar cell, and an improved photoelectric conversion efficiency.

[0066] In some embodiments of this application, the multi-junction solar cell includes a first electrode, a perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light-absorbing layer, and a second electrode stacked together. The third electrode, the insulating layer, and the fourth electrode are stacked between the perovskite layer and the second light-absorbing layer. The third electrode is located on the side of the insulating layer facing the perovskite layer, and the fourth electrode is located on the side of the insulating layer facing the second light-absorbing layer. The first electrode is located on the side of the perovskite layer away from the third electrode, and the second electrode is located on the side of the second light-absorbing layer away from the fourth electrode. Thus, the multi-junction solar cell forms a mechanically stacked cell. The insulating layer isolates the two cell units, preventing direct conduction of charge carriers and eliminating the need for current matching. Furthermore, each cell has its own separate positive and negative electrodes for current extraction, allowing for flexible circuit adjustments.

[0067] In some embodiments of this application, the optoelectronic device includes a photovoltaic device; the optoelectronic device satisfies one or more of the following characteristics:

[0068] (b1) The perovskite layer is contained in the inverse or formal structure of the optoelectronic device;

[0069] (b2) The optoelectronic device includes a first charge transport layer and a second charge transport layer, the perovskite layer being between the first charge transport layer and the second charge transport layer, the first surface facing the first charge transport layer, and the second surface facing the second charge transport layer; wherein, one of the first charge transport layer and the second charge transport layer is a hole transport layer and the other is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface;

[0070] (b3) The optoelectronic device includes a first electrode and a second electrode, the perovskite layer is disposed between the first electrode and the second electrode, the first surface faces the first electrode, and the second surface faces the second electrode;

[0071] Optionally, the optoelectronic device includes a charge transport layer and the perovskite layer disposed between the first electrode and the second electrode; the charge transport layer includes at least one of a first charge transport layer located between the first electrode and the perovskite layer and a second charge transport layer located between the second electrode and the perovskite layer; wherein, one of the first charge transport layer and the second charge transport layer is a hole transport layer and the other is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface.

[0072] The aforementioned implementation methods can be universally applied to photovoltaic devices with either conventional or inverted structures, thereby improving photoelectric conversion efficiency. Furthermore, they can also enhance device stability.

[0073] In some embodiments of the second aspect of this application, a method for fabricating an optoelectronic device is provided, which can be used to fabricate the optoelectronic device of the first aspect of this application.

[0074] In some embodiments of this application, a method for fabricating an optoelectronic device is provided, which includes the following steps:

[0075] A perovskite precursor liquid containing a first perovskite material and a first solvent is coated and dried on a stage at 0°C~70°C to remove part of the first solvent, thus preparing a perovskite intermediate phase film layer.

[0076] An additive dispersion is coated onto the surface of the perovskite mesophase film layer and laser annealed to form a perovskite layer; wherein the additive dispersion includes a first additive and a second solvent, and the first additive is an inorganic material.

[0077] The formed perovskite layer includes a first perovskite material; the perovskite layer has a first surface and a second surface that are opposite to each other in the thickness direction of the perovskite layer, the first surface corresponding to the surface on which the additive dispersion is coated; the thickness direction of the perovskite layer is denoted as the Z direction; a first region with a thickness of 5nm~10nm exists within a range extending 20nm from the first surface along the Z direction toward the interior of the perovskite layer, and a second region with a thickness of 5nm~10nm exists within a range extending 10nm from the center of the thickness of the perovskite layer toward the first surface and the second surface, respectively; the first region is located between the first surface and the second region; the energy difference between the valence band top of the first perovskite material in the first region and the first perovskite material in the second region is denoted as A. Δ Let B be the energy level difference between the Fermi level of the first perovskite material in the first region and that of the first perovskite material in the second region.Δ Let C be the energy level difference between the conduction band bottom of the first perovskite material in the first region and that in the second region. Δ The perovskite layer satisfies at least two of the following three characteristics (t1), (t2), and (t3): (t1) A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t3) The absolute value of the band gap difference between the first perovskite material in the first region and the first perovskite material in the second region is less than or equal to 0.02 eV;

[0078] When the first surface is used for electron transport, A Δ B Δ and C Δ Each is independently greater than 0 eV, and A Δ B Δ and C Δ At least one of them is greater than or equal to 0.08 eV; or,

[0079] When the first surface is used to transmit holes, A Δ B Δ and C Δ Each is independently less than 0 eV, and A Δ B Δ and C Δ At least one of them is less than or equal to -0.08 eV.

[0080] For a wet film obtained by coating a perovskite precursor solution, a perovskite mesophase film layer with non-significant crystallinity can be obtained by drying it below the perovskite crystallization temperature (e.g., 0℃~70℃) and removing part of the first solvent. Further coating an additive dispersion containing the first additive onto the perovskite mesophase film layer (i.e., coating it at the upper interface) allows the first additive to cover the perovskite mesophase film layer. In the subsequent laser annealing process, the first additive can induce effective crystallization of the perovskite and regulate the energy level structure at the upper interface (corresponding to the first surface) of the perovskite layer, causing the first perovskite material in the region near the first surface to exhibit the aforementioned energy level structure, achieving higher energy conversion efficiency. It is understood that this is not intended to be limited to the above theory.

[0081] Furthermore, the aforementioned energy level modulation method can exist stably for a long time, thereby improving the long-term operational reliability of optoelectronic devices.

[0082] Furthermore, by coating the additive dispersion, the first additive can be uniformly covered on the perovskite intermediate phase film layer. Thus, while inducing effective crystallization of the perovskite, the first additive can also provide a large-area uniform coverage of the perovskite layer formed after crystallization, achieving large-area and uniform interface energy level control, which can achieve high energy conversion efficiency on large-area devices. In addition, long-term effective interface energy level control can be achieved on large-area perovskite layers, further improving the long-term operational reliability of the device.

[0083] The perovskite mesophase film contains residual solvent, which can help the first additive to have a suitable depth of influence on the modulation of the interface energy level through assisted ion migration.

[0084] The above-mentioned preparation process has good versatility and can be applied to different types of first perovskite materials with different crystallographic properties. In addition, it also has good process stability, which can significantly improve the batch consistency of high-efficiency devices.

[0085] Furthermore, given the large-area, uniform coverage of the perovskite layer formed after crystallization by the first additive, effective and uniform interfacial energy level control can be achieved, which can be manifested as a relatively uniform interfacial potential distribution at the first surface of the perovskite layer and a low Moran index of the interfacial potential distribution.

[0086] The preparation method described above can be used to control energy levels at the interface of different types of first perovskite materials and perovskite layers with different crystallographic properties.

[0087] Furthermore, the preparation method described above can be used on large areas (e.g., ≥1m²). 2 Effective, uniform, and long-term effective interface energy level control can be achieved on large-area devices, thereby improving the energy conversion efficiency and device stability.

[0088] In some embodiments of this application, the method for fabricating the optoelectronic device satisfies one or more of the following features:

[0089] (c1) In the step of drying on a stage at 0℃~70℃ to remove part of the first solvent, the stage temperature is 20℃~35℃ and the drying time is 1s~100s, which can be selected as 10s~60s.

[0090] Optionally, the drying is performed using an air knife purging method; drying by air knife purging is more conducive to obtaining a perovskite mesophase film layer with no significant crystallinity and uniform in-plane structure, which is beneficial to improving the crystallization quality of perovskite;

[0091] (c2) The first additive is the first additive in the optoelectronic device described in the first aspect of this application; the preparation method provided above can use a variety of first additive materials, all of which can achieve the aforementioned interface energy level regulation in multiple aspects;

[0092] (c3) The concentration of the first additive in the additive dispersion is 1 mg / mL to 4 mg / mL; at this point, it is beneficial to better control the overall movement range of the energy level structure.

[0093] (c4) The laser annealing adopts a gradient annealing method; optionally, the laser annealing includes performing a first stage annealing at a first temperature and then performing a second stage annealing at a second temperature; wherein, the first temperature is lower than the second temperature;

[0094] Optionally, the first temperature is 85℃~95℃, and the second temperature is 130℃~140℃;

[0095] Optionally, the laser power for the first stage annealing at the first temperature is 100W~200W, and the laser power for the second stage annealing at the second temperature is 750W~850W.

[0096] Optionally, the duration of the first-stage annealing at the first temperature is less than the duration of the second-stage annealing at the second temperature;

[0097] Optionally, the duration of the first-stage annealing at the first temperature is 1s to 5s, and the duration of the second-stage annealing at the second temperature is 8s to 15s.

[0098] During the first-stage annealing process at a relatively low temperature, the perovskite can be induced to pre-crystallize slowly with a relatively high amount of solvent residue. Then, the second-stage annealing is carried out at a relatively high temperature to induce the formation of high-quality perovskite crystals, which helps to reduce defects and improve the energy conversion efficiency of the device.

[0099] (c5)A Δ B Δ and C Δ A satisfies the requirements of the optoelectronic device described in the first aspect of this application. Δ B Δ and C Δ Requirements.

[0100] In some embodiments of the third aspect of this application, an electrical device is provided, which includes at least one of the optoelectronic devices described in the first aspect of this application and optoelectronic devices prepared by the preparation method of the optoelectronic devices described in the second aspect of this application.

[0101] In some embodiments of the fourth aspect of this application, a power generation device is provided, which includes at least one of the optoelectronic devices described in the first aspect of this application and optoelectronic devices prepared by the preparation method of the optoelectronic devices described in the second aspect of this application.

[0102] Both the power-consuming devices and power-generating devices containing the aforementioned optoelectronic devices can leverage the advantages of optoelectronic devices.

[0103] Details of one or more embodiments or examples of this application are set forth in the following drawings and description. Other features, objects, and advantages of this application will become apparent from the specification, drawings, and claims. Attached Figure Description

[0104] To better describe and illustrate the embodiments, examples, or models provided in this application, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, the currently described embodiments, examples, or models, or the best mode of these applications as currently understood. Furthermore, the same reference numerals denote the same parts throughout the drawings. It should also be noted that the drawings are drawn in a simplified form and are only intended to facilitate and clarify the illustration of this application. The various dimensions of each part shown in the drawings are arbitrarily shown and may be precise or not drawn to scale. For example, the dimensions of parts are appropriately exaggerated in some places in the drawings to make the illustration clearer. Unless otherwise specified, the parts in the drawings are not drawn to scale. This application does not limit every dimension of every part. In the drawings:

[0105] Figure 1 This is a schematic diagram of the structure of a perovskite layer in an optoelectronic device according to an embodiment of this application. The perovskite layer has a first region and a second region, with the first region located between the first surface and the second region.

[0106] Figure 2 This is a schematic diagram of the structure of a perovskite layer in an optoelectronic device according to an embodiment of this application. The perovskite layer has a first region, a third region, and a second region, with the second region located between the first and second regions.

[0107] Figure 3 This is a schematic diagram of the structure of a perovskite layer in an optoelectronic device according to an embodiment of this application. The perovskite layer has a first region and a second region. The first region is located between the first surface and the second region, and the second surface is the light-incident side of the perovskite layer.

[0108] Figure 4 This is a schematic diagram of the structure of the perovskite layer in an optoelectronic device according to an embodiment of this application. A first additive is present in the region of the perovskite layer near the first surface.

[0109] Figure 5 This is a schematic diagram of the structure of an optoelectronic device according to an embodiment of the present application. The optoelectronic device includes a perovskite layer and a charge transport layer stacked together.

[0110] Figure 6This is a schematic diagram of the structure of an optoelectronic device according to an embodiment of the present application. The optoelectronic device includes a first charge transport layer, a perovskite layer and a second charge transport layer stacked together, wherein the first charge transport layer and the second charge transport layer are respectively disposed on both sides of the perovskite layer in the thickness direction of the perovskite layer.

[0111] Figure 7 This is a schematic diagram of the structure of an optoelectronic device according to an embodiment of the present application. The optoelectronic device includes a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode stacked together. In the thickness direction of the perovskite layer, the first charge transport layer and the second charge transport layer are respectively disposed on both sides of the perovskite layer. The first electrode is disposed on the side of the first charge transport layer away from the perovskite layer, and the second electrode is disposed on the side of the second charge transport layer away from the perovskite layer.

[0112] Figure 8 This is a schematic diagram of the structure of an optoelectronic device according to an embodiment of the present application. The optoelectronic device includes a substrate layer, a first electrode, a first charge transport layer, a perovskite layer, a second charge transport layer, and a second electrode stacked together. In the thickness direction of the perovskite layer, the first charge transport layer and the second charge transport layer are respectively disposed on both sides of the perovskite layer. The first electrode is disposed on the side of the first charge transport layer away from the perovskite layer, the second electrode is disposed on the side of the second charge transport layer away from the perovskite layer, and the substrate layer is disposed on the side of the first electrode away from the perovskite layer.

[0113] Figure 9 This is a schematic diagram of the structure of an inverted optoelectronic device according to an embodiment of this application. The optoelectronic device includes a substrate layer, an incident electrode, a hole transport layer, a perovskite layer, an electron transport layer, and a back electrode stacked together. In the thickness direction of the perovskite layer, the hole transport layer and the electron transport layer are respectively disposed on both sides of the perovskite layer. The incident electrode is disposed on the side of the hole transport layer away from the perovskite layer, the back electrode is disposed on the side of the electron transport layer away from the perovskite layer, and the substrate layer is disposed on the side of the incident electrode away from the perovskite layer.

[0114] Figure 10 This is a schematic diagram of the structure of an optoelectronic device according to an embodiment of this application. The optoelectronic device includes a substrate layer, an incident electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a back electrode stacked together. In the thickness direction of the perovskite layer, the hole transport layer and the electron transport layer are respectively disposed on both sides of the perovskite layer. The incident electrode is disposed on the side of the electron transport layer away from the perovskite layer, the back electrode is disposed on the side of the hole transport layer away from the perovskite layer, and the substrate layer is disposed on the side of the incident electrode away from the perovskite layer.

[0115] Figure 11This is a schematic diagram of the structure of an optoelectronic device according to an embodiment of the present application. The optoelectronic device is provided with a first channel region, a second channel region and a third channel region.

[0116] Figure 12 This is a schematic diagram of an electrical device according to an embodiment of this application, in which an optoelectronic device is used as a power generation device.

[0117] Explanation of reference numerals in the attached figures:

[0118] 10, Optoelectronic device; 100, Perovskite layer; Z, Thickness direction of perovskite layer; 101, First surface; 102, Second surface; 110, First region; 120, Second region; 130, Third region; 111, First additive; 300, Charge transport layer; 310, First charge transport layer; 320, Second charge transport layer; 410, First electrode; 420, Second electrode; 500, Substrate layer; 610, Hole transport layer; 620, Electron transport layer; 700, Light-incident side electrode; 800, Back electrode; P1, First channel region; P2, Second channel region; P3, Third channel region; 6, Electrical device.

[0119] It should be noted that, Figure 1-4 The dashed lines marking the perovskite layer only indicate the positions of the first, second, or third region on both sides of the perovskite layer in the thickness direction, but do not mean that the marked first, second, or third region forms an interface of different phases with the adjacent part of the perovskite layer; in some embodiments, the phases on both sides of the dashed lines are continuously distributed. Detailed Implementation

[0120] The following describes in detail, with appropriate reference to the accompanying drawings, some embodiments and examples of the optoelectronic device, fabrication method, power supply device, and power generation device of this application. However, some unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0121] The "range" disclosed in this application can be defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints. Any endpoint can be included or excluded independently and can be combined arbitrarily; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values ​​1 and 2 are listed, and maximum range values ​​3, 4, and 5 are also listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0" and "5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, when describing a parameter as an integer ≥ 2, it is equivalent to listing integers such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, and 12 for that parameter. For instance, when describing a parameter as an integer selected from "2-10", it is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0122] In this application, the term "numerical value" includes the number itself and its reasonable approximations. The definition of "numerical value" can apply to discrete numerical points or to the endpoints of a numerical range. Unless otherwise specified, the term "approximation" covers a numerical interval based on a reasonable range of fluctuations of the number itself. This reasonable range of fluctuations can vary depending on the type and magnitude of the number. This reasonable range of fluctuations can be reasonably determined based on the accuracy of the testing or measurement method. Therefore, when referring to a numerical value or a numerical range, unless otherwise specified, it should be understood that the numerical value includes its reasonable approximation, and the numerical range includes reasonable approximations at both endpoints. Those skilled in the art will understand that acceptable fluctuation ranges of the relevant approximations can be included within the definition of the numerical value or the numerical range. In this application, unless otherwise specified, "N1" can be reasonably understood as "about N1," and "N1~N2" can be reasonably understood as "about N1 to about N2," where N1 and N2 are two unequal numerical values.

[0123] In this application, unless otherwise specified, "about" means within a reasonable range above and below the number, and the range of fluctuation may vary depending on the type and value of the number. For example, a range of ±10%, ±5%, ±2%, ±1% may be allowed.

[0124] In this application, the terms "multiple," "various," or "multiple items" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "one or more" means one item or two or more (greater than or equal to) items. It can be understood that when "any number of" items are involved, it refers to any suitable combination of multiple items, that is, a combination of "any number of" items in a manner that does not conflict and enables the implementation of this application.

[0125] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0126] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment or implementation of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. The term "implementation" as used herein has a similar understanding.

[0127] Those skilled in the art will understand that, unless otherwise specified, the order in which the steps are written in the various embodiments or methods of this application does not imply a strict execution order and does not constitute any limitation on the implementation process. The detailed execution order of each step should be determined by its function and possible internal logic. Unless otherwise specified, all steps of this application may be performed sequentially or randomly, but are preferably performed sequentially. For example, if method M includes steps (a) and (b), it means that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, method M may also include step (c), meaning that step (c) can be added to method M in any order. For example, method M may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0128] In this application, open-ended technical features or solutions described using terms such as "containing," "comprising," or "including" do not exclude additional members beyond those listed unless otherwise specified. They can be considered as providing both closed-ended features or solutions comprised of the listed members and open-ended features or solutions that include additional members beyond the listed members. For example, if 'a' includes a1, a2, and a3, it may also include other members or exclude additional members unless otherwise specified. This can be considered as providing both features or solutions where "a consists of a1, a2, and a3" or "a is selected from a1, a2, and a3," and features or solutions where "a includes not only a1, a2, and a3, but also other members."

[0129] In this application, unless otherwise specified, M (e.g., m1) means that m1 is a non-limiting example of M, and it is understood that M is not limited to m1.

[0130] In this application, "optionally," "optionally," and "optional" mean that something is optional, that is, it is selected from either "with" or "without." If multiple "options" appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "option" is independent. Unless otherwise specified, the descriptions such as "optionally include" and "optionally contain" in this application, taking "optionally include" as an example, mean "may include or not include."

[0131] In this application, unless otherwise specified, the features or solutions corresponding to "and / or" include any one of two or more of the related listed items, as well as any and all combinations of the related listed items. Any and all combinations include any two related listed items, any more related listed items, or a combination of all related listed items. For example, "M and / or N" represents the group consisting of M, N, and "a combination of M and N". "Containing M and / or N" can mean "containing M, containing N, and containing both M and N", or "containing M, containing N, or containing both M and N", and can be appropriately understood according to the context.

[0132] In this document, the word "suitable" in "suitable combination" or "suitable method" refers to the technical solution that can implement this application.

[0133] In this document, terms such as "preferred," "better," and "good" are merely descriptions of implementation methods or embodiments that achieve better results and should be understood not to limit the scope of protection of this application. If multiple "preferred" terms appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "preferred" term shall be independent.

[0134] In this application, terms such as "further," "even more," "especially," "for example," "as," "example," and "exemplary" are used for descriptive purposes to indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0135] In this application, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first," "second," "third," "fourth," etc., serve only as a non-exhaustive enumeration and should be understood not to constitute a closed limitation on quantity.

[0136] In this application, the term "room temperature" generally refers to 4℃~35℃, and may refer to 20℃±5℃. In some embodiments or examples of this application, room temperature refers to 20℃~30℃.

[0137] In this application, when a unit is specified for a data range, if the unit is only followed by the right endpoint, it indicates that the units for the left and right endpoints are the same. For example, 3~5μm or 3-5μm both mean that the unit for the left endpoint "3" and the right endpoint "5" is μm (micrometer), and both have the same meaning as 3μm~5μm. Furthermore, similar descriptions of other parameters such as temperature and concentration are interpreted in the same way.

[0138] In this application, unless otherwise specified, wt% means weight percentage, which is numerically equal to the corresponding mass percentage.

[0139] In the description of the embodiments or examples of this application, the terms "center", "longitudinal", "lateral", "length", "height", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", etc., indicating the orientation or positional relationship are only for the convenience of describing the embodiments of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the embodiments of this application.

[0140] In this application, unless otherwise expressly specified and limited, in the device structure, the first feature "above" or "below" the second feature can be in direct contact with the first feature, or indirect contact between the first and second features through an intermediate medium. In this application, unless otherwise expressly specified and limited, the first feature "above" or "below" the second feature can indicate a horizontal relative position, or it can simply indicate the existence of an attachment relationship without specifying a horizontal relative position.

[0141] In this application, the exemplary descriptions such as "in some implementations (or embodiments)" and "in one implementation (or embodiment)" may cover, but are not limited to, the following meanings: these solutions can be combined with other solutions in a suitable manner to form new technical solutions.

[0142] In this application, the terms "first surface," "second surface," "first region," "second region," "first charge transport layer," "second charge transport layer," "first electrode," "second electrode," "third electrode," "fourth electrode," "first channel region," "second channel region," "third channel region," "first battery cell," "second battery cell," "first charge carrier," "second charge carrier," "third charge carrier," "fourth charge carrier," "first light absorption layer," "second light absorption layer," "first perovskite material," "second perovskite material," "third perovskite material," "first temperature," "second temperature," "first solvent," and "second solvent," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features.

[0143] In this application, unless otherwise specified, "layered arrangement" refers to the description of the stacking direction between layered structures and does not constitute a limitation on the structural composition of the stacked body. For example, "including stacked structural layer A and structural layer B" means that the stacking direction of structural layer A and structural layer B is along their respective thickness directions; that is, the thickness direction of structural layer A is consistent with or substantially consistent with the thickness direction of structural layer B. It is understood that other intermediate structural layers are allowed to be set between structural layer A and structural layer B.

[0144] Unless otherwise stated, the improvements described in this application are not intended to be limited to any theoretical constraints.

[0145] In this application, unless otherwise specified, an "optoelectronic device" is a device capable of photoelectric conversion using a photoelectric conversion mechanism, which includes the process of converting light energy into electrical energy and vice versa. An optoelectronic device can be a photovoltaic device or a light-emitting device. In this application, unless otherwise specified, the core functional layer that exchanges energy with photons can be called the "active layer," which includes a semiconductor active material. In a photovoltaic device, the semiconductor active material absorbs photons to generate carrier pairs (which are electron-hole pairs), and this active layer can be called the "light-absorbing layer" or "light-absorbing layer." In a light-emitting device, the semiconductor active material recombines injected electrons and holes and releases photons, and this active layer can be called the "light-emitting layer." Optoelectronic devices can achieve photoelectric conversion through any suitable mechanism. Photovoltaic devices can convert light energy into electrical energy based on a light-absorbing layer, and light-emitting devices can convert electrical energy into light energy based on a light-emitting layer.

[0146] In this application, unless otherwise specified, "active layer" refers to a structural layer comprising a semiconductor active material. The semiconductor active material can be any suitable type of semiconductor active material capable of photoelectric conversion. Non-limiting examples of semiconductor active materials may include one or more of perovskite materials, silicon-containing semiconductor materials, copper zinc tin sulfide, copper zinc tin selenide, copper zinc tin selenide sulfide, copper indium gallium selenide, copper indium gallium diselenide, copper indium selenide, cadmium telluride, and organic active materials. Exemplarily, the semiconductor active material may include one or more of perovskite materials, gallium arsenide (GaAs), cadmium telluride (CdTe), copper indium selenide (CIGS), and organic active materials.

[0147] In this application, unless otherwise stated, a "photovoltaic device" is a photoelectric device capable of converting solar energy into electrical energy using a photoelectric conversion mechanism. The active layer in a photovoltaic device can generate carrier pairs (which can be electron-hole pairs) upon excitation by incident photons. The flow of electrons and holes generates current, thereby realizing the conversion from light energy to electrical energy. The active layer in a photovoltaic device can be referred to as a "light-absorbing layer." Application examples of photovoltaic devices may include, but are not limited to, solar cells.

[0148] In this application, unless otherwise specified, "solar cell" refers to a battery capable of converting solar energy into electrical energy using a photoelectric conversion mechanism. It is understood that a solar cell includes a light-absorbing layer. When the light-absorbing layer comprises perovskite material, the solar cell is a "perovskite solar cell".

[0149] In this application, unless otherwise specified, a "light-emitting device" is a photoelectric device capable of converting electrical energy into solar energy using a photoelectric conversion mechanism. The active layer in a photoelectric device can recombine injected charge carriers (electrons and holes), releasing energy in the form of photons. Non-limiting examples of light-emitting devices may include light-emitting diodes (LEDs), laser diodes (LDs), etc. Applications of light-emitting devices may include, but are not limited to, lighting and display applications.

[0150] In this application, unless otherwise specified, "energy conversion efficiency" refers to the efficiency of converting light energy (or electrical energy) into electrical energy (or light energy) in an optoelectronic device. In photovoltaic devices, energy conversion efficiency refers to the efficiency of converting light energy into electrical energy, generally referred to as photoelectric conversion efficiency (PCE). In light-emitting devices, energy conversion efficiency refers to the efficiency of converting electrical energy into light energy, which can be expressed as external quantum efficiency (EQE).

[0151] In this application, unless otherwise specified, "charge carrier" can be an electron or a hole. "Carrier pair" refers to an electron-hole pair.

[0152] In some embodiments of this application, when the photovoltaic device is operating, after the light-absorbing layer is illuminated, the internal electrons gain energy and break free from the binding force of the light-absorbing layer to form negatively charged electron carriers, and simultaneously form positively charged hole carriers, thus generating electron-hole pairs. The free electrons and free holes propagate in opposite directions, causing electrons and holes to flow and forming an external current, thereby realizing the conversion of light energy into electrical energy. Furthermore, after the light-absorbing layer absorbs photons, it is stimulated to generate electron-hole pairs. These pairs further dissociate to form free carriers with opposite charges. The free electrons propagate towards the negative electrode, and the free holes propagate towards the positive electrode. Both types of free carriers are collected by their respective electrodes, further forming a photocurrent in the circuit of the photovoltaic device.

[0153] In some embodiments of this application, in a photovoltaic device, free electrons are transported to the negative electrode through an electron transport layer, and free holes are transported to the positive electrode through a hole transport layer. The two types of free carriers are collected by their respective electrodes, and further form a photocurrent in the circuit of the photovoltaic device.

[0154] In photovoltaic devices, the electron transport layer can extract and transport electron carriers and block free holes from passing through.

[0155] In photovoltaic devices, the hole transport layer can extract and transport hole carriers and block free electrons from passing through.

[0156] In some embodiments of this application, when the light-emitting device is operating, an external forward bias voltage is applied to inject electrons from the cathode and holes from the anode. The injected charge carriers (electrons and holes) are transported to the light-emitting layer, where they recombine, releasing energy and emitting light in the form of photons. The cathode is typically connected to the negative terminal of the power supply, and the anode is typically connected to the positive terminal of the voltage.

[0157] In light-emitting devices, the electron transport layer is responsible for injecting and transporting electron carriers and can block free holes from passing through.

[0158] In light-emitting devices, the hole transport layer is responsible for injecting and transporting hole carriers and can block free electrons from passing through.

[0159] In this application, unless otherwise specified, from the perspective of the type of semiconductor active material, optoelectronic devices whose active layer includes perovskite material can be referred to as "perovskite devices". The active layer in a perovskite device can be referred to as a "perovskite layer". From an application perspective, perovskite devices can be used in both photovoltaic and light-emitting fields; that is, perovskite devices can function as both photovoltaic devices and light-emitting devices.

[0160] In this application, unless otherwise specified, "perovskite layer" refers to the active layer comprising perovskite material. The perovskite layer has a certain thickness, for example, but not limited to 100nm~2000nm, and optionally 200nm~1500nm.

[0161] In this application, the "thickness direction of the perovskite layer" can be denoted as the Z direction, and the direction perpendicular to the Z direction can be denoted as the transverse direction.

[0162] In this application, unless otherwise specified, the perovskite layer 100 includes two surfaces that are opposite to each other in its thickness direction (Z direction), which may be referred to as the first surface 101 and the second surface 102, respectively. (See reference...) Figure 1 The spacing between the first and second surfaces roughly corresponds to the thickness of the perovskite layer. In some embodiments of this application, the first and second surfaces of the perovskite layer respectively contact different structural layers disposed adjacent to the perovskite layer. In some embodiments, the first and second surfaces of the perovskite layer respectively contact different charge transport layers.

[0163] Optoelectronic devices can be either photovoltaic (PV) devices or light-emitting devices. A representative PV device is the perovskite solar cell, in which the light-absorbing layer is a perovskite layer containing perovskite material. Due to its high conversion efficiency and the ability to be fabricated using low-cost solution methods, perovskite solar cells have attracted widespread attention from industry. Photovoltaic conversion efficiency is crucial for the practical application of perovskite solar cells. Therefore, researching ways to improve the energy conversion efficiency of optoelectronic devices is of great significance.

[0164] Taking perovskite solar cells as an example, crystal defects are one of the important factors affecting device efficiency. Passivating defects by introducing additives is one approach to improve device efficiency. Common methods of introducing additives are: (1) adding them directly to the perovskite precursor solution; (2) introducing additives by coating them onto the surface of the perovskite layer after obtaining the crystallized perovskite layer. However, both methods have shortcomings. Method (1) may passivate bulk defects, but it may reduce the crystal quality, resulting in limited improvement in device efficiency. Method (2) may affect interface charge transport while passivating interface defects, thus limiting the improvement in device efficiency. Therefore, it is necessary to develop new solutions to improve the energy conversion efficiency of optoelectronic devices.

[0165] According to various embodiments and examples of this application, this application provides information relating to optoelectronic devices, fabrication methods, electrical devices, and power generation devices. The optoelectronic device exhibits high energy conversion efficiency.

[0166] In some embodiments of this application, the optoelectronic device includes a perovskite layer 100. Figure 1 This is a schematic diagram of the structure of a perovskite layer 100 in an optoelectronic device according to an embodiment of this application. The perovskite layer 100 has a first surface 101 and a second surface 102 that are opposite to each other in the thickness direction (Z direction) of the perovskite layer. The perovskite layer 100 has a first region 110 located near the first surface 101 and a second region 120 located in the bulk phase portion of the perovskite layer 100. The first region 110 is located between the first surface 101 and the second region 102.

[0167] It can be understood that the perovskite layer 100 includes perovskite material (denoted as the first perovskite material).

[0168] In some embodiments of this application, an optoelectronic device is provided, comprising a perovskite layer 100 having a first surface 101 and a second surface 102 opposite to each other in the thickness direction (Z direction) of the perovskite layer. The perovskite layer 100 includes a first region 110 located near the first surface 101 and a second region 120 located in the bulk phase portion of the perovskite layer 100. The first region 110 is located between the first surface 101 and the second region 120. When the first surface is used for electron transport, the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region 110 are all shifted upward (i.e., the conduction band bottom, Fermi level, and valence band top are all closer to the vacuum level, corresponding to when the first surface is used for electron transport) or downward (i.e., when the first surface is used for electron transport) relative to the first perovskite material in the second region 120. That is, when the conduction band bottom, Fermi level, and valence band top are all further away from the vacuum level (when the first surface is used for hole transport), at least one of them shifts by an amplitude greater than or equal to 0.08 eV, and the energy level changes of at least two of the conduction band bottom, valence band top, and band gap are all small (correspondingly, the energy level distances between the conduction band bottom, Fermi level, and valence band top do not change significantly); or, when the first surface is used for hole transport, the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region 110 are all lower than those of the first perovskite material in the second region 120 (that is, the conduction band bottom, Fermi level, and valence band top are all away from the vacuum level), and the energy level changes of at least two of the conduction band bottom, valence band top, and band gap are all small (correspondingly, the energy level distances between the conduction band bottom, Fermi level, and valence band top do not change significantly).

[0169] Figure 2This is a schematic diagram of the structure of the perovskite layer 100 in an optoelectronic device according to an embodiment of this application. The perovskite layer 100 has a first region 110, a third region 130 and a second region 120. The third region 130 is located between the first region 110 and the second region 120.

[0170] In this application, unless otherwise specified, "first region" refers to the region in the perovskite layer located near the first surface, and "second region" refers to the region located in the bulk phase portion of the perovskite layer. It is understood that the first region is located between the first surface and the second region, and the second region is located between the first region and the second surface.

[0171] In this application, unless otherwise stated, "third region" refers to the region in the perovskite layer located between the first region and the second region.

[0172] The first, second, and third regions are each independently thin (e.g., 5 nm to 10 nm), which can be matched to the detection depth during energy level testing, such as the detection depth when using ultraviolet photoelectron spectroscopy (UPS) to test energy levels. In some embodiments, the first and second regions have the same thickness, which can be achieved by controlling parameters such as the incident angle during UPS testing.

[0173] Energy level data of the first perovskite material in the first region can reflect the energy level structure of the perovskite layer near the interface layer, and energy level data of the first perovskite material in the second region can reflect the energy level structure of the bulk phase of the perovskite layer.

[0174] In some embodiments of this application, a region with a thickness of 5nm to 10nm that exists within a range extending 20nm from the first surface toward the second surface is referred to as the first region.

[0175] In some embodiments of this application, a region with a thickness of 5 nm to 10 nm exists within a range extending 10 nm from the center of the thickness of the perovskite layer toward the first surface and the second surface, respectively, and is referred to as the second region.

[0176] In some embodiments of this application, a region extending 5 nm to 10 nm from the first surface along the Z direction within the perovskite layer at a distance L3 from the first surface is designated as the third region; L3 ≥ 30 nm. The energy level modulation depth at the interface of the first surface can be reflected by the energy level difference between the third region and the second region.

[0177] In some embodiments of the first aspect of this application, an optoelectronic device 10 is provided, which includes a perovskite layer 100, the perovskite layer 100 including a perovskite material (denoted as a first perovskite material); the perovskite layer 100 has a first surface 101 and a second surface 102 that are opposite to each other in the thickness direction (Z direction) of the perovskite layer; the thickness direction of the perovskite layer is denoted as the Z direction.

[0178] There is a first region 110 with a thickness of 5nm to 10nm extending 20nm from the first surface 101 along the Z direction toward the interior of the perovskite layer; there is a second region 120 with a thickness of 5nm to 10nm extending 10nm from the center of the thickness of the perovskite layer 100 toward the first surface 101 and the second surface 102 respectively; the first region 110 is located between the first surface 101 and the second region 120.

[0179] Let A denote the energy difference between the valence band peaks of the first perovskite material in the first region and those in the second region. Δ Let B be the energy level difference between the Fermi level of the first perovskite material in the first region and that of the first perovskite material in the second region. Δ Let C be the energy level difference between the conduction band bottom of the first perovskite material in the first region and that in the second region. Δ ;

[0180] The perovskite layer satisfies at least two of the following three characteristics:

[0181] (t1)A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV;

[0182] (t2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV;

[0183] (t3) The absolute value of the band gap difference between the first perovskite material in the first region and the first perovskite material in the second region is less than or equal to 0.02 eV;

[0184] When the first surface is used for electron transport, A Δ B Δ and C Δ Each is independently greater than 0 eV, and A Δ B Δ and C Δ At least one of them is greater than or equal to 0.08 eV; or,

[0185] In the case where the first surface is used to transmit holes, A Δ B Δ and C Δ Each is independently less than 0 eV, and A Δ B Δ and C Δ At least one of them is less than or equal to -0.08 eV.

[0186] In this application, unless otherwise specified, the terms "conduction band bottom (CBM)," "Fermi level (EF)," "valence band top (VBM)," and "band gap (Eg)" for semiconductor materials have their commonly known meanings in the art. Unless otherwise specified, the energy levels of CBM, EF, and VBM are all based on the vacuum level, and all energy levels of CBM, EF, and VBM are negative. EF is located between CBM and VBM, and CBM is closer to the vacuum level; that is, the energy level structure from top to bottom is vacuum level, CBM, EF, and VBM. The band gap is the distance between the conduction band bottom and the valence band top, Eg = CBM - VBM.

[0187] In this application, unless otherwise specified, "vacuum level" has a well-known meaning in the art, referring to the absolute zero point of electron potential energy, corresponding to the energy benchmark of an electron freely at rest outside a material, and numerically equal to the minimum energy required for an electron to completely escape the constraints of the material itself. The vacuum level provides a common benchmark for comparing the energy levels of different semiconductor materials. The "Fermi level" refers to the highest energy level occupied by an electron at T=0K; the "work function" refers to the minimum energy required to move an electron from the interior of a solid to its surface. Numerically, the work function is equal to the difference between the vacuum level and the Fermi level.

[0188] In this application, both "the difference between the first parameter and the second parameter" and "the difference between the first parameter and the second parameter" are expressed as the difference obtained by subtracting the second parameter from the first parameter, i.e., "first parameter – second parameter". For example, "the difference between the energy levels of the valence band tops of the first perovskite material in the first region and the first perovskite material in the second region" represents the difference obtained by subtracting the energy level of the valence band tops of the first perovskite material in the second region from the energy level of the first perovskite material in the first region.

[0189] In this application, "the thickness center of the perovskite layer" refers to the location at half the thickness of the perovskite layer, that is, the position where the perovskite layer extends half its thickness from the first or second surface into the interior of the perovskite layer. This location can characterize the bulk phase of the perovskite layer.

[0190] This optoelectronic device features a perovskite layer with a unique interface energy level structure.

[0191] When the first surface is used for electron transport, the perovskite layer includes a first region located near one side surface and a second region located in the bulk phase portion of the perovskite layer. The conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are shifted upwards relative to the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the second region, respectively, corresponding to C... Δ B Δ and A ΔEach independently greater than 0 eV is beneficial for generating band bending and the resulting interfacial electric field at the interface, thereby reducing electron accumulation caused by interfacial energy level mismatch and improving the electron carrier transport capability. Simultaneously, the energy level changes of at least two of the conduction band bottom, valence band top, and band gap of the perovskite material in the first region are relatively small, corresponding to the perovskite layer satisfying at least two of the following characteristics (t1), (t2), and (t3). This means that the energy level changes of the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are approximately the same as those in the second region, and correspondingly, the energy level distances between the conduction band bottom, Fermi level, and valence band top do not change significantly. This helps to stabilize the carrier concentration in the overall perovskite layer structure, making it easier for carriers to remain in a stable state during carrier transport, thereby further improving the stability of the carrier transport interface; further controlling A Δ B Δ and C Δ At least one of the energy levels has a relatively high value, causing a relatively large upward shift in the energy level structure of the first region. This facilitates the formation of energy level bending, which prevents charge accumulation at the interface and promotes efficient carrier transport, thus contributing to the relative stability of the electron concentration in the overall structure. Therefore, optoelectronic devices exhibit high energy conversion efficiency. It is understandable that we do not wish to be limited to the aforementioned theory.

[0192] When the first surface is used for hole transport, the tantalum layer includes a first region located near one side surface and a second region located in the bulk phase portion of the perovskite layer. The conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are respectively shifted downwards relative to the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the second region, corresponding to C... Δ B Δ and A ΔEach independently less than 0 eV is beneficial for generating band bending and the resulting interfacial electric field at the interface, thereby reducing hole accumulation caused by interfacial energy level mismatch and improving the hole carrier transport capability. Simultaneously, the energy level changes of at least two of the conduction band bottom, valence band top, and band gap of the perovskite material in the first region are relatively small, corresponding to the perovskite layer satisfying at least two of the following characteristics (t1), (t2), and (t3). This means that the energy level changes of the conduction band bottom, Fermi level, and valence band top of the first perovskite material in the first region are approximately the same as those in the second region, and correspondingly, the energy level distances between the conduction band bottom, Fermi level, and valence band top do not change significantly. This helps to stabilize the carrier concentration in the overall perovskite layer structure, making it easier for carriers to remain in a stable state during carrier transport, thereby further improving the stability of the carrier transport interface; further controlling A Δ B Δ and C Δ At least one of them has a relatively high value, which makes the energy level structure of the first region shift down relatively significantly, which is conducive to the formation of a certain energy level bending. The bending of the energy level can avoid the accumulation of charge at the interface and promote the effective transport of charge carriers, thus contributing to the relative stability of the electron concentration in the overall structure; thus, the optoelectronic device has a high energy conversion efficiency.

[0193] It's understandable that they don't want to be limited to the aforementioned theories.

[0194] In this application, "the first surface is used for electron transport" means that, under device operating conditions (photoelectric or electroluminescent mode), the charge-selective contact characteristics at the interface between the first surface and the perovskite layer are primarily characterized by electron extraction or injection. "The first surface is used for hole transport" means that, under device operating conditions (photoelectric or electroluminescent mode), the charge-selective contact characteristics at the interface between the first surface and the perovskite layer are primarily characterized by hole extraction or injection. Those skilled in the art should understand that "the first surface is used for electron transport" does not mean that the surface only allows electrons to pass through while completely repelling holes, but rather that the dominant carrier transport type is electrons. Similarly, "the first surface is used for hole transport" does not mean that the surface only allows holes to pass through while completely repelling electrons, but rather that the dominant carrier transport type is holes.

[0195] Taking photovoltaic devices as an example, those skilled in the art can determine whether the first surface of the corresponding perovskite layer is used for transporting electrons or holes by judging the positive and negative electrodes of the optoelectronic device in contact with the outside world, or by using current-voltage characteristic tests to measure the JV curves under forward and reverse bias, and by judging the magnitude of the open-circuit voltage of the device, the transport characteristics of the first surface can be determined. It can also be determined through photoluminescence (PL) and electroluminescence (EL) spectral analysis, impedance spectroscopy (EIS) analysis, etc., without limitation here.

[0196] Those skilled in the art can use methods known or existing in the art to obtain the “conduction band bottom (CBM),” “Fermi level (EF),” “valence band top (VBM),” and “band gap (Eg)” of the perovskite material in the perovskite layer.

[0197] By sputtering the sample surface layer by layer and combining it with UPS surface scanning tests, the in-plane energy level structure distribution information at different depths is obtained. For example, the energy level data of the first perovskite material in the first and second regions can be obtained by testing the following method: obtain the perovskite layer of the sample to be tested exposed on the first surface, first perform an absorption spectral scan, and then perform a UPS full-spectrum scan and E... cutoff The energy levels of the first region (CBM, EF, and VBM) are obtained through scanning and Ev scanning, and the band gap can be calculated. Etching is then performed to expose the second region, followed by an absorption spectroscopy scan, and then UPS full-spectrum and Ev scanning. cutoff Ev scanning was used to obtain the energy level structure CBM, EF, and VBM of the perovskite bulk phase (second region), and the band gap (Eg) could be calculated. By comparing the CBM, EF, VBM, and band gap (Eg) data of the first and second regions, the changes in the perovskite energy level structure at the interface where the first surface is located relative to the perovskite bulk phase can be understood.

[0198] The thickness of each layer during the peeling process can be adjusted according to the thickness of the perovskite layer. For example, when the perovskite layer thickness is 400 nm, information can be collected at different thicknesses with intervals of 20 nm to 100 nm. For instance, an absorption spectrum scan of the sample surface can be performed first, followed by UPS full-spectrum and E... cutoff Ev scan, followed by absorption spectral scans at 25 nm intervals near the first interface (approximately 100 nm), and then UPS full spectrum and Ev scans. cutoff E v The scanning process involves performing a UPS (Up-Side Array) scan every 50 nm in the remaining bulk phase region until the second interface region is reached. This allows for the acquisition of energy level structure information for the perovskite bulk phase and the second interface. One of the first and second interfaces corresponds to the interface at the first surface, and the other corresponds to the interface at the second surface.

[0199] By precisely controlling the peeling thickness, a bare third region can be obtained, and then the energy level data of the third region can be tested.

[0200] Absorption spectroscopy scanning refers to ultraviolet-visible-near-infrared absorption spectroscopy, which can obtain a spectrum showing the change in the absorptivity of incident light with the wavelength of photons, and can obtain information including but not limited to band gap.

[0201] UPS full-spectrum scanning uses ultraviolet light as the excitation source to excite electrons in the sample and measure the kinetic energy distribution of these photoelectrons.

[0202] E cutoff The Secondary Electron Cutoff (SEC) scan is used to measure the high-energy region of the "secondary electron cutoff" and obtain work function data.

[0203] Ev (Valence band spectrum) scans measure a fine spectrum from the vicinity of the Fermi level to the top of the valence band.

[0204] Taking a perovskite layer sample from one embodiment as an example, the perovskite layer thickness is 450 nm. The perovskite layer thickness region of 20 nm near the FTO side is defined as the lower interface region. The perovskite layer portion within the 20 nm range of the thickness center region is used to represent the bulk phase of the perovskite layer (the second region is included in the bulk phase portion). The perovskite layer thickness portion within the 20 nm range on the other side is defined as the perovskite upper interface region. A first region exists within the perovskite upper interface region.

[0205] Examples of instruments used to acquire perovskite material in perovskite layers include models such as the Thermo Fisher Scientific ESCALAB QXi, which can perform both UPS and XPS scans.

[0206] The X-ray photoelectron spectroscopy (XPS) test procedure can be as follows:

[0207] Elemental distribution information at different depths can be obtained by sputtering the sample surface layer by layer and combining it with full elemental scanning. The depth sampling depth of XPS testing is 0.5 nm to 10 nm, and it can be achieved through ion sputtering (such as Ar). + C +0 The sample is peeled off layer by layer using either a cluster ion beam or an ion beam, and XPS full spectrum or specific elemental spectrum is acquired after each layer is peeled off. The thickness of each layer can be adjusted according to the thickness of the perovskite layer. For example, when the thickness of the perovskite layer is 400 nm, information can be acquired at different thicknesses by peeling off layers at intervals of 20 nm to 100 nm.

[0208] XPS testing can be used to determine the location of different thicknesses of the perovskite layer, thereby allowing the selection of an appropriate etching ion beam rate. Then, UPS is used to perform band structure testing on the target area.

[0209] The UPS testing process can be as follows:

[0210] (i) First use Ar + An ion beam is used to etch a 450 nm perovskite film, and the signal of a selected element (such as Pb) in the perovskite crystal phase of the perovskite layer is detected. 4f (Related signals) to determine the etching location, pending Pb 4f When the signal intensity drops to 1 / e of the plateau intensity, it is defined as the perovskite etching is complete, and the etching rate of the perovskite layer by the ion beam is calculated. Among them, the signal of the selected element in the perovskite crystal phase has a high concentration in the perovskite layer, and it is easy to form a region with the elements of the possible adjacent structural layers, thereby determining the boundary between the perovskite layer and the possible adjacent structural layers.

[0211] (ii) Identify the sample to be tested, first perform an absorption spectrum scan, then perform UPS full spectrum and E... cutoff Ev scanning was performed to obtain the corresponding CBM, EF, and VBM positions; then etching was performed to expose the second region at the center of the thickness, followed by an absorption spectral scan, and then UPS full spectrum and Ev scanning were performed. cutoff Energy level structures of the perovskite bulk phase were obtained by Ev scanning.

[0212] See also the Examples and Tests section below.

[0213] In some embodiments of this application, the perovskite layer satisfies at least one of the following three characteristics (any numerical parameter of the following characteristics may also be selected from any suitable value or range in the context):

[0214] (a1)A Δ and B Δ The absolute value of the difference is less than or equal to 0.03 eV;

[0215] (a2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.03 eV;

[0216] (a3)A Δ and C Δ The absolute value of the difference is less than or equal to 0.03 eV.

[0217] By controlling the perovskite layer to satisfy at least two of the following characteristics (a1), (a2) and (a3), it is beneficial to better control the stability of the carrier concentration in the overall structure of the perovskite layer, to better improve the stability of the carrier transport interface, and thus to better optimize the energy conversion efficiency.

[0218] In some embodiments of this application, A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV, optionally less than or equal to 0.03 eV, further optionally less than or equal to 0.02 eV, and may also be 0 to 0.05 V, or may be any of the following values, or greater than or equal to 0 and less than or equal to any of the following values, or a range selected from any two of the following values: 0.01 eV, 0.02 eV, 0.03 eV, 0.04 eV, 0.05 eV, etc.

[0219] In some embodiments of this application, C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV, optionally less than or equal to 0.03 eV, further optionally less than or equal to 0.02 eV, and may also be 0 to 0.05 V, or may be any of the following values, or greater than or equal to 0 and less than or equal to any of the following values, or a range selected from any two of the following values: 0.01 eV, 0.02 eV, 0.03 eV, 0.04 eV, 0.05 eV, etc.

[0220] In some embodiments of this application, A Δ and C Δ The absolute value of the difference is less than or equal to 0.05 eV, optionally less than or equal to 0.03 eV, further optionally less than or equal to 0.02 eV, and may also be 0 to 0.05 V, or may be any of the following values, or greater than or equal to 0 and less than or equal to any of the following values, or a range selected from any two of the following values: 0.01 eV, 0.02 eV, 0.03 eV, 0.04 eV, 0.05 eV, etc.

[0221] In some embodiments of this application, when the first surface is used for electron transport, A Δ B Δ and C ΔOne, two, or three of them may be 0.08 eV to 0.35 eV, or may be any of the following values ​​or a range consisting of any two of the following values: 0.08 eV, 0.10 eV, 0.12 eV, 0.13 eV, 0.14 eV, 0.15 eV, 0.16 eV, 0.18 eV, 0.20 eV, 0.22 eV, 0.24 eV, 0.25 eV, 0.26 eV, 0.28 eV, 0.30 eV, 0.31 eV, 0.32 eV, 0.33 eV, 0.34 eV, 0.35 eV, etc.

[0222] By controlling B Δ A Δ C Δ One or more of these factors, within the aforementioned range, can be used to control the overall upward shift of the energy level structure of the perovskite material in the first region of the perovskite layer. By controlling the overall upward shift of the energy level structure within the aforementioned range, efficient charge transport and stable interface connection at the interface between the perovskite layer and the adjacent functional layer can be better achieved, which is beneficial to improving energy conversion efficiency.

[0223] In some embodiments of this application, when the first surface is used for electron transport, A Δ B Δ and C Δ One, two, or three of the values ​​can be between 0.14 eV and 0.30 eV, specifically between 0.15 eV and 0.30 eV. Alternatively, they can be any of the following values ​​or a range selected from any two of the following values: 0.14 eV, 0.15 eV, 0.16 eV, 0.18 eV, 0.20 eV, 0.22 eV, 0.24 eV, 0.25 eV, 0.26 eV, 0.28 eV, 0.30 eV, 0.31 eV, 0.32 eV, 0.33 eV, 0.34 eV, 0.35 eV, etc. In this case, it is beneficial to better improve energy conversion efficiency.

[0224] In some embodiments of this application, when the first surface is used for electron transport, A ΔIt can be any of the following values, or greater than or equal to 0.08 eV and less than or equal to any of the following values ​​greater than 0.08 eV, or a range consisting of any two of the following values: 0.08 eV, 0.10 eV, 0.12 eV, 0.13 eV, 0.14 eV, 0.15 eV, 0.16 eV, 0.18 eV, 0.20 eV, 0.22 eV, 0.24 eV, 0.25 eV, 0.26 eV, 0.28 eV, 0.30 eV, 0.31 eV, 0.32 eV, 0.33 eV, 0.34 eV, 0.35 eV, etc.

[0225] In some embodiments of this application, where the first surface is used for electron transport, B Δ It can be any of the following values, or greater than or equal to 0.08 eV and less than or equal to any of the following values ​​greater than 0.08 eV, or a range consisting of any two of the following values: 0.08 eV, 0.10 eV, 0.12 eV, 0.13 eV, 0.14 eV, 0.15 eV, 0.16 eV, 0.18 eV, 0.20 eV, 0.22 eV, 0.24 eV, 0.25 eV, 0.26 eV, 0.28 eV, 0.30 eV, 0.31 eV, 0.32 eV, 0.33 eV, 0.34 eV, 0.35 eV, etc.

[0226] In some embodiments of this application, when the first surface is used for electron transport, C Δ It can be any of the following values, or greater than or equal to 0.08 eV and less than or equal to any of the following values ​​greater than 0.08 eV, or a range consisting of any two of the following values: 0.08 eV, 0.10 eV, 0.12 eV, 0.13 eV, 0.14 eV, 0.15 eV, 0.16 eV, 0.18 eV, 0.20 eV, 0.22 eV, 0.24 eV, 0.25 eV, 0.26 eV, 0.28 eV, 0.30 eV, 0.31 eV, 0.32 eV, 0.33 eV, 0.34 eV, 0.35 eV, etc.

[0227] In some embodiments of this application, where the first surface is used for electron transport, 0.08 eV ≤ B Δ ≤ 0.35eV, optionally, 0.14eV ≤ B Δ ≤ 0.30eV.

[0228] In some embodiments of this application, where the first surface is used for electron transport, 0.08 eV ≤ AΔ ≤ 0.35eV, optionally, 0.14eV ≤ A Δ ≤ 0.30eV.

[0229] In some embodiments of this application, where the first surface is used for electron transport, 0.08 eV ≤ C Δ ≤ 0.35eV, optionally, 0.14eV ≤ C Δ ≤ 0.30eV.

[0230] In other embodiments of this application, when the first surface is used to transmit holes, A Δ B Δ and C Δ One, two, or three of them may be between -0.35 eV and -0.08 eV; they may also be any of the following values ​​or a range consisting of any two of the following values: -0.08 eV, -0.10 eV, -0.12 eV, -0.13 eV, -0.14 eV, -0.15 eV, -0.16 eV, -0.18 eV, -0.20 eV, -0.22 eV, -0.24 eV, -0.25 eV, -0.26 eV, -0.28 eV, -0.30 eV, -0.31 eV, -0.32 eV, -0.33 eV, -0.34 eV, -0.35 eV, etc.

[0231] By controlling B Δ A Δ C Δ One or more of these factors, within the aforementioned range, can control the overall downward shift of the energy level structure of the perovskite material in the first region of the perovskite layer. By controlling the overall upward shift of the energy level structure within the aforementioned range, efficient hole transport and stable interface connection at the interface between the perovskite layer and the adjacent functional layer can be better achieved, which is beneficial to improving energy conversion efficiency.

[0232] In other embodiments of this application, when the first surface is used to transmit holes, A Δ B Δ and C ΔOne, two, or three of the values ​​can be between -0.30 eV and -0.14 eV, specifically between -0.30 eV and -0.15 eV, or any of the following values ​​or a range selected from any two of the following values: 0.14 eV, 0.15 eV, 0.16 eV, 0.18 eV, 0.20 eV, 0.22 eV, 0.24 eV, 0.25 eV, 0.26 eV, 0.28 eV, 0.30 eV, 0.31 eV, 0.32 eV, 0.33 eV, 0.34 eV, 0.35 eV, etc. In this case, it is beneficial to better improve energy conversion efficiency.

[0233] In other embodiments of this application, when the first surface is used to transmit holes, A Δ It can be any of the following values, or less than or equal to -0.08 eV and greater than or equal to any of the following values ​​less than -0.08 eV, or a range selected from any two of the following values: -0.08 eV, -0.10 eV, -0.12 eV, -0.13 eV, -0.14 eV, -0.15 eV, -0.16 eV, -0.18 eV, -0.20 eV, -0.22 eV, -0.24 eV, -0.25 eV, -0.26 eV, -0.28 eV, -0.30 eV, -0.31 eV, -0.32 eV, -0.33 eV, -0.34 eV, -0.35 eV, etc.

[0234] In other embodiments of this application, when the first surface is used to transmit holes, B Δ It can be any of the following values, or less than or equal to -0.08 eV and greater than or equal to any of the following values ​​less than -0.08 eV, or a range selected from any two of the following values: -0.08 eV, -0.10 eV, -0.12 eV, -0.13 eV, -0.14 eV, -0.15 eV, -0.16 eV, -0.18 eV, -0.20 eV, -0.22 eV, -0.24 eV, -0.25 eV, -0.26 eV, -0.28 eV, -0.30 eV, -0.31 eV, -0.32 eV, -0.33 eV, -0.34 eV, -0.35 eV, etc.

[0235] In other embodiments of this application, when the first surface is used to transmit holes, C ΔIt can be any of the following values, or less than or equal to -0.08 eV and greater than or equal to any of the following values ​​less than -0.08 eV, or a range selected from any two of the following values: -0.08 eV, -0.10 eV, -0.12 eV, -0.13 eV, -0.14 eV, -0.15 eV, -0.16 eV, -0.18 eV, -0.20 eV, -0.22 eV, -0.24 eV, -0.25 eV, -0.26 eV, -0.28 eV, -0.30 eV, -0.31 eV, -0.32 eV, -0.33 eV, -0.34 eV, -0.35 eV, etc.

[0236] In other embodiments of this application, when the first surface is used for transmitting holes, -0.35eV≤A Δ ≤- 0.08eV, optionally, -0.30eV≤ A Δ ≤-0.14eV.

[0237] In other embodiments of this application, when the first surface is used for transmitting holes, -0.35eV≤B Δ ≤- 0.08eV, optionally, -0.30eV≤ B Δ ≤-0.14eV.

[0238] In other embodiments of this application, where the first surface is used for electron transport, -0.35eV≤C Δ ≤- 0.08eV, optionally, -0.30eV≤ C Δ ≤-0.14eV.

[0239] In some embodiments of this application, the optoelectronic device satisfies one or more of the following features (any numerical parameter of the following features may also be selected from any suitable value or range in the context):

[0240] (z1) The band gap of the first perovskite material in the second region is 1.2 eV to 2.2 eV, which can be selected as 1.2 eV to 2.0 eV, or any of the following values ​​or a range selected from any two of the following values: 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.8 eV, 2.0 eV, 2.2 eV, etc.;

[0241] (z2) The Fermi level of the first perovskite material in the second region is -3.0 eV to -5.5 eV, and can be selected as -3.7 eV to -5.0 eV, based on the vacuum level; non-limitingly, the Fermi level of the first perovskite material in the second region can also be any of the following values ​​or a range selected from any two of the following values: -3.0 eV, -3.2 eV, -3.4 eV, -3.5 eV, -3.6 eV, -3.8 eV, -4.0 eV, -4.2 eV, -4.4 eV, -4.5 eV, -4.6 eV, -4.8 eV, -5.0 eV, -5.2 eV, -5.4 eV, -5.5 eV, etc.

[0242] The aforementioned energy level modulation method can be universally applied to various first perovskite materials with different band gaps (e.g., band gaps of 1.2 eV to 2.2 eV). By controlling the band gap of the first perovskite material in the second region within the above range, it is possible to cover most of the visible light and part of the near-infrared light region in the solar spectrum, enabling the first perovskite material to absorb a wider range of solar spectra, thereby improving the generation efficiency of photogenerated carriers and further improving the energy conversion efficiency of optoelectronic devices.

[0243] The aforementioned energy level modulation method can be universally applied to a variety of first perovskite materials with different Fermi levels (e.g., Fermi levels ranging from -3.0 eV to -5.5 eV). By controlling the Fermi level of the first perovskite material in the second region within the above range, the first perovskite material can be kept at a suitable energy level. This allows for the control of a suitable carrier concentration to achieve good electrical conductivity, while also maintaining a good crystal structure and photoelectric properties.

[0244] In some embodiments of this application, a region extending 5nm~10nm from the first surface at a distance L3 within the perovskite layer along the Z direction toward the first surface is designated as the third region 130, where L3 ≥ 30nm; the third region 130 is located between the first region 110 and the second region 120; the difference in Fermi level between the first perovskite material in the third region and the first perovskite material in the second region is designated as B. 32 Wherein, when the first surface is used for electron transport, 0.1 eV ≤ B 32 <0.30Ev, or,

[0245] When the first surface is used for hole transport, -0.30 eV 32 ≤-0.10eV.

[0246] ​In some embodiments of this application, L3 is a value selected from 30nm to 100nm, or a value selected from 30nm to 50nm, or any of the following values ​​or a range composed of any two of the following values: 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, etc.

[0247] For example, in the case where the first surface is used for electron transfer, B 32 It can also be any of the following values ​​or a range consisting of any two of the following values: 0.1 eV, 0.12 eV, 0.14 eV, 0.15 eV, 0.16 eV, 0.18 eV, 0.2 eV, 0.22 eV, 0.24 eV, 0.25 eV, 0.26 eV, 0.28 eV, 0.30 eV, etc.

[0248] For example, in the case where the first surface is used to transmit holes, B 32 It can also be any of the following values ​​or a range consisting of any two of the following values: -0.1 eV, -0.12 eV, -0.14 eV, -0.15 eV, -0.16 eV, -0.18 eV, -0.2 eV, -0.22 eV, -0.24 eV, -0.25 eV, -0.26 eV, -0.28 eV, -0.30 eV, etc.

[0249] The energy level modulation depth at the first surface of the perovskite layer can reach L3. Reaching this modulation depth is conducive to forming an electric field bending at the interface of the first surface that is beneficial to charge transport, thereby extracting the charge from the perovskite layer more effectively and improving the energy conversion efficiency.

[0250] Because perovskites have a high light absorption coefficient, most charge carriers will be generated at the front interface (the interface on the incident light side) of the perovskite photovoltaic. For example, in the inverted structure, photogenerated charge carriers are mainly generated near the perovskite interface close to the hole transport layer. This requires electrons to travel across the entire thickness of the perovskite layer to the electron transport layer for collection. In other words, the effective diffusion distance of electrons must be greater than the thickness of the perovskite layer for electrons to be effectively collected.

[0251] In some embodiments of this application, the thickness of the perovskite layer is 200 nm to 1500 nm, optionally 400 nm to 1000 nm, and may also be any of the following values ​​or a range selected from any two of the following values: 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, 1100 nm, 1200 nm, 1300 nm, 1400 nm, 1500 nm, etc. Exemplarily, the thickness of the perovskite layer may also be any of the following ranges: 400 nm to 800 nm, 400 nm to 600 nm, 200 nm to 600 nm, 200 nm to 800 nm, etc.

[0252] The thickness of the perovskite layer can be measured using scanning electron microscopy (SEM) images of its longitudinal cross-section. Non-limiting examples of SEM instruments include the Sigma 300 scanning electron microscope from ZEISS GmbH, Germany; the EVO 15 backscatter scanning electron microscope from ZEISS GmbH, Germany; the Zeiss SUPRA 55; and the Apreo 2 SEM field emission scanning electron microscope.

[0253] In this application, unless otherwise specified, "longitudinal section of the perovskite layer" refers to a section obtained by cutting along the thickness direction of the perovskite layer, which is substantially parallel to the thickness direction (Z direction) of the perovskite layer.

[0254] When the thickness of the perovskite layer is within the aforementioned range, it can not only enable the perovskite layer to have high light absorption capacity, achieve better short-circuit current density and open-circuit voltage, but also help to better match the thickness of the perovskite layer with the effective diffusion length of photogenerated carriers, thereby enabling the carriers to be collected more effectively and ultimately achieving higher energy conversion efficiency.

[0255] In some embodiments of this application, the perovskite layer further includes a first additive located in a region of the perovskite layer near the first surface; the first additive is an inorganic material.

[0256] In some embodiments of this application, the first additive includes one or more of alkali metal halides, metal oxides, sulfides, metal nitrides, germanates, and carbonates.

[0257] In some embodiments of this application, the alkali metal element in the metal halide includes one or more of Li, Na, K and Cs, and the halogen in the metal halide includes one or more of F, Cl, Br and I.

[0258] In some embodiments of this application, the metal halide includes one or more of KCl, CsBr, and NaCl.

[0259] In some embodiments of this application, the metal oxide includes one or more of Al2O3, V2O5, Ta2O5, SrTiO3, Co3O4, and Fe2O3.

[0260] In some embodiments of this application, the sulfide includes one or more of MoS2, WS2, SnS2, and CS2.

[0261] In some embodiments of this application, the metal nitride includes aluminum nitride (AlN).

[0262] In some embodiments of this application, germanate includes Zn2GeO4.

[0263] In some embodiments of this application, the carbonate includes Li2CO3.

[0264] The crystal structure of the aforementioned first additive has a specific dipole moment and dielectric constant, which can form a suitable dipole at a thickness that allows carrier tunneling, thereby promoting efficient charge transport.

[0265] In some embodiments of this application, the perovskite layer satisfies any one of the following characteristics:

[0266] (i) The first additive includes at least one of Cl and Br elements;

[0267] Optionally, the second surface is used for light incident, and the first surface is used for electron transport; this is beneficial for the perovskite layer and the adjacent functions on the first surface side to have better energy level matching, thereby improving the ability of the interface to transport electrons, improving the ability of the interface at the first surface to collect photogenerated carriers (electrons) near the second surface, and improving the photoelectric conversion efficiency.

[0268] (ii) The first additive includes at least one of element I;

[0269] Optionally, the second surface is used for light incident, and the first surface is used for hole transport. In this case, it is beneficial to have better energy level matching between the perovskite layer and the adjacent functions on the first surface side, thereby improving the ability of the interface to transport holes, improving the ability of the interface at the first surface to collect photogenerated carriers (holes) near the second surface, and improving the photoelectric conversion efficiency.

[0270] In some embodiments of this application, the molar percentage of the first additive relative to the first perovskite material is 2% to 15%, optionally 1% to 10%, and may also be any of the following percentages or a range selected from any two of the following percentages: 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 12%, 14%, 15%, etc., where the molar amount of the first perovskite material is measured by the molar amount of divalent cations in the first perovskite material. In this case, the first perovskite material primarily has an ABX3 type structure. This is advantageous for better utilizing the aforementioned effects of the first additive.

[0271] Figure 4 This is a schematic diagram of the structure of the perovskite layer 100 in the optoelectronic device 10 according to an embodiment of this application. The perovskite layer 100 contains a first additive 111 in the region near the first surface 101 (corresponding to the fourth region).

[0272] In this application, unless otherwise specified, the region in the perovskite layer where the first additive is distributed may be referred to as the fourth region.

[0273] In some embodiments of this application, the fourth region is located between the first surface 101 and the second region 120, as can be seen in [reference]. Figure 4 .

[0274] In some embodiments of this application, the fourth region may or may not overlap with the first region. Furthermore, when the fourth region overlaps with the first region, they may overlap completely or partially.

[0275] In some embodiments of this application, the Moran index of the potential distribution of the first surface is less than or equal to 0.35, optionally less than or equal to 0.32, further optionally less than or equal to 0.20, and may also be less than or equal to any of the following values, or a range selected from any two of the following values: 0.02, 0.04, 0.05, 0.06, 0.08, 0.10, 0.12, 0.14, 0.15, 0.16, 0.18, 0.2, 0.22, 0.24, 0.25, 0.26, 0.28, 0.3, 0.32, 0.34, 0.5, etc. Optionally, the Moran index of the potential distribution of the first surface is greater than or equal to 0. In some embodiments, the potential of the first surface is obtained by measuring the potential of the first surface using a Kelvin atomic force microscope.

[0276] In this application, unless otherwise stated, "Moran's I" has a well-known statistical meaning and is a classic statistic used to measure spatial autocorrelation. In this application, it is used to measure the uniformity of spatial data point distribution. When the Moran's I is approximately 0, there is no significant spatial correlation, corresponding to random uniformity of data points. When the Moran's I is greater than 0, the larger the value, the stronger the positive correlation of data points, the more obvious the "clustering" or "patching" characteristics of the data point distribution, and the worse the uniformity of data point distribution. When the Moran's I is less than 0, the data points show a significant negative correlation, with high and low values ​​regularly repelling and interleaving each other. In the extreme case, when it approaches -1, high and low values ​​maximize mutual repulsion and interleaving.

[0277] Unless otherwise stated, the Moran index used in this application is greater than or equal to 0.

[0278] A relatively low Moran index indicates a more uniform potential distribution. By controlling the potential distribution of the first surface within the aforementioned range, it is beneficial to achieve a more uniform potential distribution, which in turn is beneficial to achieve more uniform charge transport. It is also beneficial to achieve more efficient and uniform charge extraction at the interface of the first surface, which can more effectively suppress local accumulation and local damage of interface charge, thereby improving energy conversion efficiency.

[0279] In this application, unless otherwise stated, the "Moran index of the potential distribution of the first surface" is obtained by Kelvin atomic force microscopy (KPFM) combined with Moran index analysis.

[0280] The instrument used for KPFM testing can be Bruker FastScan Bio.

[0281] KPFM testing can be performed as follows: By observing the change in electrostatic force between the probe and the sample, when the probe approaches the surface to be tested, due to the difference in their work functions, electrons will flow from the high Fermi level to the low Fermi level until the Fermi level is flattened. The contact potential difference can be deduced from the work function difference during this process, thereby obtaining potential data. By further combining in-plane scanning, the potential distribution data of the surface to be tested can be obtained.

[0282] When performing statistical analysis on the Moran index of the potential distribution of a selected surface, the potential data is used as the parameter to be analyzed. The following parameters are processed in the following manner:

[0283] 1. Parameters to be analyzed at different locations: Obtain the values ​​of the parameters to be analyzed at different locations within the region to be analyzed.

[0284] 2. Calculate the Moran index (I) using the selected statistical formula:

[0285]

[0286] Where n is the number of data points; W is the sum of all weights; ij x is an element in the spatial weight matrix; i and x j These are the parameter values ​​for the i-th and j-th positions; This is the average value of all position parameter values.

[0287] 3. Setting the spatial weight matrix:

[0288] Spatial weighted evidence uses inverse distance weighting, i.e. ,in The distance between the i-th and j-th positions is... p is the distance attenuation parameter; unless otherwise specified, p is 2.

[0289] 4. Statistical area and sampling interval of data points: The statistical area is 10 μm × 10 μm, and the sampling interval of data points is 50 nm.

[0290] For some methods that may improve the interface between perovskite and charge transport materials, when scaled up to large-area perovskite thin films, the ability to effectively tune interface energy levels on large-area devices is easily reduced due to the decrease in the uniformity of the interface material.

[0291] In some embodiments of this application, the area of ​​the perovskite layer on a projection plane perpendicular to the Z direction is greater than or equal to 0.09 cm². 2 Optionally, greater than or equal to 1m 2 .

[0292] The aforementioned energy level modulation of the perovskite layer can be achieved over a relatively large area. Furthermore, the energy level modulation described above can be uniformly achieved over a relatively large area, which is beneficial for improving the energy conversion efficiency of large-area devices. In addition, it is also beneficial for improving the performance stability of large-area devices.

[0293] When the size of the optoelectronic device is large, and the detection method involved in this application cannot cover the entire device area, an appropriate number of test samples can be selected based on the relative relationship between the area that the detection method can cover and the device area. For example, a reasonably distributed and appropriately sized sampling area can be selected on a projection plane perpendicular to the Z direction. The qualitative analysis results of each area are used to determine whether it meets the corresponding characteristics, and the average value is calculated as the test value based on the quantitative analysis results of each area. For example, for a device with an area of ​​1 square meter (m2), ≥4 (e.g., 4 to 9) areas can be selected for detection.

[0294] In some embodiments of this application, the area of ​​the perovskite layer on the projection plane perpendicular to the Z direction can be any of the following values, or greater than or equal to any of the following values, or selected from a range consisting of any two of the following values: 0.09 cm 2 0.1 cm 2 0.12 cm 2 0.125 cm 2 0.15 cm 2 0.16 cm 2 0.175 cm 2 0.18 cm 2 0.2cm 2 0.22 cm 2 0.225 cm 2 0.25 cm 2 1 cm 2 4 cm 2 9 cm 2 10 cm 2 16 cm 2 20 cm 2 25 cm 2 36cm 2 49 cm 2 50 cm 2 60 cm 2 64 cm 2 65 cm 2 70 cm 2 80 cm 2 81 cm 2 90 cm 2 100 cm 2 120cm 2 121 cm 2 125 cm 2 130 cm 2 140 cm 2 144 cm 2 150 cm 2 160 cm 2 169 cm 2 170 cm 2 180cm 2 190 cm 2 196 cm 2 200 cm 2 225 cm 2 250 cm 2 256 cm2 、260 cm 2 、280 cm 2 、289 cm 2 、290cm 2 、300 cm 2 、320 cm 2 、324 cm 2 、325 cm 2 、330 cm 2 、350 cm 2 、360 cm 2 、361 cm 2 、370 cm 2 、380cm 2 、400 cm 2 、440 cm 2 、441 cm 2 、450 cm 2 、480 cm 2 、484 cm 2 、500 cm 2 、600 cm 2 、625 cm 2 、660cm 2 、676 cm 2 、680 cm 2 、700 cm 2 、720 cm 2 、729 cm 2 、730 cm 2 、780 cm 2 、784 cm 2 、800 cm 2 、820cm 2 、840 cm 2 、841 cm 2 、850 cm 2 、860 cm 2 、900 cm 2 、950 cm 2 、961 cm 2 、980 cm 2 、0.1 m 2 、0.12m 2 、0.14 m 2 、0.15 m 2 、0.16 m 2 、0.18 m 2 、0.2 m 2 、0.3 m 20.4 m 2 0.5 m 2 0.6 m 2 0.7 m 2 0.8m 2 0.9 m 2 10000 cm 2 (1 m 2 ), 1.1 m 2 1.2 m 2 1.3 m 2 1.4 m 2 1.5 m 2 1.6 m 2 1.7 m 2 1.8m 2 1.9 m 2 2 m 2 2.1 m 2 2.2 m 2 2.3 m 2 2.4 m 2 2.5 m 2 2.6 m 2 2.7 m 2 2.8 m 2 2.9 m 2 3m 2 3.2 m 2 3.4 m 2 3.5 m 2 3.6 m 2 3.7 m 2 3.8 m 2 4 m 2 4.2 m 2 4.4 m 2 4.5 m 2 wait.

[0295] In some embodiments of this application, the optoelectronic device includes a photovoltaic device or a light-emitting device. The aforementioned perovskite layer can be used in photovoltaic devices or light-emitting devices to help improve the energy conversion efficiency of photovoltaic devices or light-emitting devices.

[0296] In some embodiments of this application, the optoelectronic device includes a photovoltaic device, with the second surface being the light-incident side. In this case, light is primarily incident from the second surface, and the perovskite layer is excited by photons to generate charge carriers mainly near the second surface. These photogenerated charge carriers are transported to the corresponding electrode on the first surface and collected. By controlling the energy level structure difference between the first and second regions, the transport of charge carriers toward the second surface can be improved, thereby enhancing the photoelectric conversion efficiency of the optoelectronic device. Furthermore, device stability can also be improved.

[0297] In the thickness direction of the perovskite layer, for a photovoltaic device, when light can be incident on only one side, that side is called the "light-incident side"; when light can be incident on both sides of the photovoltaic device, the side with higher device efficiency (PCE) when light is incident is defined as the "light-incident side".

[0298] Figure 3 This is a schematic diagram of the structure of the perovskite layer 100 in the optoelectronic device 10 according to an embodiment of this application. The perovskite layer 100 has a first region 110 and a second region 120. The first region 110 is located between the first surface 101 and the second region 120, and the second surface 102 is the light-incident side of the perovskite layer 100. Figure 3 The structure shown is a light-incident side disposed on one side of the second surface 102. Alternatively, the light-incident side may also be disposed on one side of the first surface 101.

[0299] In some embodiments of this application, the optoelectronic device includes a first electrode and a second electrode, with a perovskite layer located between the first electrode and the second electrode.

[0300] In optoelectronic devices, one of the first electrode and the second electrode is a positive electrode, and the other is a negative electrode.

[0301] In optoelectronic devices, at least one of the first electrode and the second electrode is a transparent electrode. Either transparent electrode can be used for light incident.

[0302] In optoelectronic devices, both the first electrode and the second electrode are transparent electrodes.

[0303] Unless otherwise specified, when the first and second electrodes each consist of only one transparent electrode, that transparent electrode is defined as the "incident-side electrode". When the optoelectronic device includes two transparent electrodes, the transparent electrode that provides higher device efficiency when light is incident on the corresponding transparent electrode is defined as the "incident-side electrode". In this case, the other electrode can be defined as the "back electrode".

[0304] It is understood that the incident light-side electrode is a transparent electrode. The back electrode may or may not be a transparent electrode; for example, the back electrode may be a metal electrode. The meanings of transparent electrode and metal electrode are well known to those skilled in the art, and their implications are understandable.

[0305] In some embodiments of this application, one of the "first electrode" and the "second electrode" is a transparent electrode for light incident. In some embodiments, the first electrode is a transparent electrode.

[0306] In some embodiments of this application, the second electrode is a metal electrode.

[0307] In some embodiments of this application, the first electrode is a transparent electrode and the second electrode is a metal electrode.

[0308] In some embodiments of this application, the optoelectronic device includes a photovoltaic device; the photovoltaic device includes a solar cell, and the solar cell includes a perovskite layer.

[0309] The aforementioned perovskite layer can be incorporated into solar cells to improve their photoelectric conversion efficiency. Furthermore, it can also enhance device stability.

[0310] In some embodiments of this application, the optoelectronic device includes a photovoltaic device, which includes a multi-junction solar cell.

[0311] In this application, unless otherwise specified, a "multi-junction solar cell" refers to a solar cell in which two or more cell cells made of semiconductor active materials with different band gaps are stacked together in series optically and / or electrically. Multi-junction solar cells can broaden the absorption spectrum of solar cells, maximizing the conversion of light energy into electrical energy, and also help reduce thermal relaxation losses. Multi-junction solar cell design is an important way to overcome the Shockley-Queisser limit efficiency of single-junction solar cells. A multi-junction solar cell includes at least two cell cells, each cell cell including at least one light-absorbing layer, and each light-absorbing layer has a different band gap.

[0312] It is understandable that a "cell" in a multi-junction solar cell includes at least a light-absorbing layer. The light-absorbing layers in different cells can provide different band gaps.

[0313] In this application, unless otherwise specified, "battery cell" and "battery section" have the same meaning and can be used interchangeably.

[0314] In this application, unless otherwise specified, "light-absorbing layer" and "light-absorbing layer" have the same meaning and can be used interchangeably.

[0315] In this application, unless otherwise specified, "band gap" has a commonly known meaning in the art and can be analyzed, compared, and confirmed using conventional methods within the art. Without limitation, the band gap of a material can be determined by its absorption or emission spectra; commonly used optical methods include ultraviolet-visible absorption spectroscopy, photoluminescence spectroscopy, and Raman spectroscopy.

[0316] When solar cells are multi-junction solar cells, they are advantageous in improving the utilization rate of incident light, while also retaining the aforementioned advantages of high photoelectric conversion efficiency. Multi-junction solar cells can be monolithic integrated tandem solar cells or mechanically tandem solar cells, offering flexibility in form and a wide range of applications.

[0317] In some embodiments of this application, the optoelectronic device includes a solar cell, which is a multi-junction solar cell. The multi-junction solar cell includes a first cell unit, which includes a light-absorbing layer (which may be referred to as a first light-absorbing layer or first light-absorbing layer). The first light-absorbing layer may include the aforementioned perovskite layer.

[0318] The first light-absorbing layer includes a first semiconductor active material.

[0319] In some embodiments of this application, the first light-absorbing layer is the aforementioned perovskite layer. In this case, the first semiconductor active material includes the first perovskite material.

[0320] In some embodiments of this application, the optoelectronic device includes a solar cell, which is a multi-junction solar cell. The multi-junction solar cell includes a first cell unit, which includes a perovskite layer.

[0321] The aforementioned perovskite layer can be incorporated into multi-junction solar cells to improve their photoelectric conversion efficiency. Furthermore, it can also enhance device stability.

[0322] In some embodiments of this application, the multijunction solar cell further includes a second cell stacked with the first cell cell; the second cell cell and the first cell cell are connected by an interconnect layer, or the second cell cell and the first cell cell are isolated by an insulating layer; the second cell cell includes a light absorption layer (which may be referred to as the second light absorption layer or the second light-absorbing layer), and the second light absorption layer and the first light absorption layer have different band gaps.

[0323] In some embodiments of this application, the interconnect layer includes a carrier recombination layer or a tunneling layer. In some embodiments, the interconnect layer can be a carrier recombination layer or a tunneling layer.

[0324] In some embodiments of this application, the interconnect layer includes a carrier recombination layer.

[0325] In some embodiments of this application, the interconnect layer includes a tunneling layer.

[0326] In some embodiments of this application, the band gaps of the second light-absorbing layer and the perovskite layer are different. Thus, by providing multiple light-absorbing layers (including the perovskite layer and the second light-absorbing layer) with different band gaps, the multi-junction solar cell can effectively absorb light of different wavelengths, broadening the spectral range of absorbed light and improving the photoelectric conversion efficiency of the multi-junction solar cell.

[0327] In some embodiments, the multijunction solar cell is a tandem solar cell.

[0328] In some embodiments of this application, the multijunction solar cell further includes a second cell stacked with the first cell cell; the second cell cell and the first cell cell are connected by an interconnect layer, or the second cell cell and the first cell cell are isolated by an insulating layer; the second cell cell includes a light-absorbing layer (i.e., a second light-absorbing layer), and the second light-absorbing layer and the perovskite layer have different band gaps.

[0329] In this way, by setting up multiple light-absorbing layers with different band gaps, multi-junction solar cells can effectively absorb light of different wavelengths, broaden the spectral range of light absorbed by multi-junction solar cells, and improve the photoelectric conversion efficiency of multi-junction solar cells.

[0330] In some embodiments of this application, the light-absorbing layer (i.e., the second light-absorbing layer) in the second battery cell includes a semiconductor active material (which may be referred to as the second semiconductor active material). The second semiconductor active material includes one or more of the following: a second perovskite material, a silicon-containing semiconductor material, a copper zinc tin sulfide, a copper zinc tin selenide, a copper zinc tin selenide sulfide, a copper indium gallium selenide, a copper indium gallium diselenide, a copper indium selenide, cadmium telluride, gallium arsenide, and organic active materials.

[0331] The aforementioned embodiments can be universally applied to the aforementioned different types of multi-junction solar cells.

[0332] In some embodiments of this application, a carrier recombination layer or a tunneling layer is provided between the monolithically integrated battery cells.

[0333] In this application, unless otherwise specified, the "carrier recombination layer" is a structural layer in which electrons and holes transported from two different battery cells recombine, enabling the two battery cells to achieve ohmic connection and share the positive and negative electrodes.

[0334] In some embodiments of this application, a carrier recombination layer is provided between the first battery cell and the second battery cell.

[0335] In some embodiments of this application, interconnection structures are provided between the battery cells connected in series, which can provide tunneling junctions (also known as tunneling layers) to realize tunneling conduction and electrical series connection between different battery cells, while maintaining optical transparency so that photons can pass smoothly through the previous battery cell to the next battery cell.

[0336] In some embodiments of this application, an interconnection structure is provided between the first battery cell and the second battery cell.

[0337] In some embodiments of this application, a tunnel junction may be formed between the first battery cell and the second battery cell.

[0338] In some embodiments of this application, the charge carrier recombination layer is a structural layer in which electrons transported from the first battery cell and holes transported from the second battery cell recombine, or in which holes transported from the first battery cell and electrons transported from the second battery cell recombine, thereby connecting the first battery cell and the second battery cell in series.

[0339] In some embodiments of this application, a multi-junction solar cell includes a first electrode, a perovskite layer, an interconnect layer, a second light-absorbing layer, and a second electrode stacked together. The interconnect layer is located between the perovskite layer and the second light-absorbing layer. The first electrode is located on the side of the perovskite layer facing away from the interconnect layer, and the second electrode is located on the side of the second light-absorbing layer facing away from the interconnect layer. Thus, two cell units in a multi-junction solar cell are connected through the interconnect layer to achieve current matching between the two cell units. This results in a relatively smaller size, the ability to absorb light of different wavelengths, a wider absorption spectrum range for the multi-junction solar cell, and an improved photoelectric conversion efficiency. The interconnect layer may include a carrier recombination layer or a tunneling layer.

[0340] In some embodiments of this application, a multi-junction solar cell includes a first electrode, a perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light-absorbing layer, and a second electrode stacked together. The third electrode, insulating layer, and fourth electrode are stacked between the perovskite layer and the second light-absorbing layer. The third electrode is located on the side of the insulating layer facing the perovskite layer, and the fourth electrode is located on the side of the insulating layer facing the second light-absorbing layer. The first electrode is located on the side of the perovskite layer away from the third electrode, and the second electrode is located on the side of the second light-absorbing layer away from the fourth electrode. Thus, the multi-junction solar cell forms a mechanically stacked cell. The insulating layer isolates the two cell units, preventing direct conduction of charge carriers and eliminating the need for current matching. Furthermore, each cell has its own independent positive and negative electrodes for current extraction, allowing for flexible circuit adjustments.

[0341] In this application, unless otherwise specified, a multi-junction solar cell with two battery cells may also be referred to as a "tandem solar cell". A tandem solar cell may be a two-terminal structure or a four-terminal structure.

[0342] In some embodiments of this application, the tandem solar cell has a two-end structure. In this case, two cell units are directly connected in series through a tunneling layer or a carrier recombination layer. The tandem solar cell only has two output electrodes, one positive and the other negative, and the current between the two cell units remains consistent. This type of tandem solar cell can also be called a monolithic integrated tandem cell, which refers to cell units stacked along the thickness direction that are electrically connected in series between a pair of electrode layers. Different cell units are connected through a carrier recombination layer or a tunneling layer to achieve current matching between adjacent cell units, so that adjacent cell units form an integrated structure of electrical and optical series connection.

[0343] In some embodiments of this application, the tandem solar cell includes a first electrode, a first light-absorbing layer, a carrier recombination layer, a second light-absorbing layer, and a second electrode. The first light-absorbing layer and the second light-absorbing layer are respectively disposed on both sides of the carrier recombination layer. The first electrode is located on the side of the first light-absorbing layer away from the carrier recombination layer, and the second electrode is located on the side of the second light-absorbing layer away from the carrier recombination layer.

[0344] In some embodiments of this application, the tandem solar cell includes a first electrode, a first light-absorbing layer, a tunneling layer, a second light-absorbing layer, and a second electrode. The first light-absorbing layer and the second light-absorbing layer are respectively disposed on both sides of the tunneling layer. The first electrode is located on the side of the first light-absorbing layer away from the tunneling layer, and the second electrode is located on the side of the second light-absorbing layer away from the tunneling layer.

[0345] In some embodiments of this application, the tandem solar cell has a four-terminal structure. In this case, the cell cells are electrically independent and operate independently, with coupling between the cell cells only through optical means; no carrier recombination layer or tunneling layer is provided between the cell cells. Each cell cell has its own pair of electrodes (positive and negative), and the entire tandem solar cell has four electrical output terminals, corresponding to the four electrodes. Two cell cells are isolated in the stacking direction by an insulating layer to prevent short circuits between the two cell cells.

[0346] In some embodiments of this application, the optoelectronic device includes a photovoltaic device; the optoelectronic device satisfies one or more of the following characteristics:

[0347] (b1) The perovskite layer is contained in the inverse or formal structure of the optoelectronic device;

[0348] (b2) The optoelectronic device includes a first charge transport layer and a second charge transport layer, with a perovskite layer between the first charge transport layer and the second charge transport layer, a first surface facing the first charge transport layer, and a second surface facing the second charge transport layer; wherein, one of the first charge transport layer and the second charge transport layer is a hole transport layer and the other is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface.

[0349] (a3) The optoelectronic device includes a first electrode and a second electrode, a perovskite layer is disposed between the first electrode and the second electrode, the first surface faces the first electrode and the second surface faces the second electrode;

[0350] In some embodiments, the first charge transport layer transports electrons, as does the first surface used for charge transport.

[0351] In some embodiments, the type of charge transported by the first charge transport layer and the type of charge transported by the first surface are both holes.

[0352] In some embodiments, the optoelectronic device includes a charge transport layer and a perovskite layer disposed between a first electrode and a second electrode; the charge transport layer includes at least one of a first charge transport layer located between the first electrode and the perovskite layer and a second charge transport layer located between the second electrode and the perovskite layer; wherein, one of the first charge transport layer and the second charge transport layer is a hole transport layer and the other is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface.

[0353] The aforementioned implementation methods can be universally applied to photovoltaic devices with either conventional or inverted structures, thereby improving photoelectric conversion efficiency. Furthermore, they can also enhance device stability.

[0354] The aforementioned advantages of the perovskite layer can be realized regardless of the positional relationship between the hole transport layer and the electron transport layer stacked with the perovskite layer, and can be realized in devices with different structures.

[0355] In some implementations, the bandgap of the perovskite layer (i.e., the first light-absorbing layer) is Eg2, where 1.65 eV ≤ Eg2 ≤ 2.2 eV; the bandgap of the second light-absorbing layer is Eg1, where 1.1 eV ≤ Eg1 ≤ 1.6 eV. This bandgap configuration of the perovskite layer and the second light-absorbing layer effectively absorbs both short-wavelength and long-wavelength light, improving the photoelectric conversion efficiency of the multi-junction solar cell. In this implementation, the cell unit corresponding to the second light-absorbing layer is a narrow-bandgap solar cell, and the cell unit corresponding to the perovskite layer is a wide-bandgap solar cell.

[0356] In some embodiments, the second light-absorbing layer comprises a layer of compounds including: a second perovskite material, a silicon-containing semiconductor material, copper zinc tin sulfide, copper zinc tin selenide, copper zinc tin selenide sulfide, copper indium gallium selenide, copper indium gallium diselenide, copper indium selenide, cadmium telluride, gallium arsenide, and organic active materials. These materials can absorb light of different wavelengths with the perovskite layer, thereby broadening the spectral range of light absorption in the multi-junction solar cell and improving its photoelectric conversion efficiency. In some embodiments of this application, the definition of the second perovskite material is the same as that of the first perovskite material, but the composition differs to obtain a second light-absorbing layer with a different bandgap, used to absorb light of different wavelengths with the perovskite layer, broadening the absorption spectral range of the multi-junction solar cell and improving its photoelectric conversion efficiency. Exemplarily, the second light-absorbing layer comprises a second perovskite material, thereby obtaining a perovskite-perovskite multi-junction solar cell. In another example, the second light-absorbing layer comprises a crystalline silicon material, thereby obtaining a perovskite-crystalline silicon multi-junction solar cell.

[0357] Organic active materials are typically composed of blends of electron donor and electron acceptor materials. Common electron donor materials include poly(3-hexylthiophene) (P3HT), wide-bandgap polymer donor PM6, and high-efficiency polymer donor D18, while common electron acceptor materials include fullerene acceptors (such as PC). 61 BM, PC 71 BM, etc.), and non-fullerene acceptors (such as Y6 series materials, indendrothiophene derivatives, BTP series, etc.). Exemplary organic active materials include PM6:Y6 and P3HT:PC. 61 One of BM, D18:BTP-eC9, etc. can be used to obtain multiple types.

[0358] Silicon-containing semiconductor materials include, but are not limited to, crystalline silicon materials or amorphous silicon materials. Crystalline silicon materials can include monocrystalline silicon or polycrystalline silicon.

[0359] In some embodiments, a multi-junction solar cell includes a first electrode and a second electrode, with a first light-absorbing layer and a second light-absorbing layer both located between the first electrode and the second electrode, the first light-absorbing layer being closer to the first electrode and the second light-absorbing layer being closer to the second electrode.

[0360] In some implementations, the first electrode in a multi-junction solar cell is a transparent electrode. This allows light to enter the multi-junction solar cell from the first electrode. Furthermore, the band gap of the second light-absorbing layer is Eg1, 1.1 eV ≤ Eg1 ≤ 1.6 eV; the band gap of the perovskite layer is Eg2, 1.65 eV ≤ Eg2 ≤ 2.2 eV. Thus, light entering from the first electrode first passes through the perovskite layer, where it absorbs short-wavelength light (such as ultraviolet to visible light), and then enters the second light-absorbing layer, where it absorbs longer-wavelength light (such as near-infrared light). This allows for greater utilization of different wavelengths of light, improving the photoelectric conversion efficiency of the multi-junction solar cell. Furthermore, the perovskite layer, acting as the top light-absorbing layer, absorbs ultraviolet-visible light, protecting the second light-absorbing layer, which acts as the bottom light-absorbing layer.

[0361] In other embodiments, the bandgap of the second light-absorbing layer is Eg3, where 1.65 eV ≤ Eg3 ≤ 2.2 eV; and the bandgap of the perovskite layer is Eg4, where 1.1 eV ≤ Eg4 ≤ 1.6 eV. Thus, the bandgap settings of the second light-absorbing layer and the perovskite layer can absorb short-wavelength and long-wavelength light respectively, improving the photoelectric conversion efficiency of the multi-junction solar cell. In this embodiment, the cell unit corresponding to the second light-absorbing layer is a wide-bandgap solar cell, and the cell unit corresponding to the perovskite layer is a narrow-bandgap solar cell.

[0362] In other embodiments, the second light-absorbing layer comprises a third perovskite material. Thus, the resulting multi-junction solar cell is a perovskite-perovskite multi-junction solar cell. In some embodiments of this application, the third perovskite material is defined as the same type as the first perovskite material described above, but with a different composition to obtain a second light-absorbing layer with a different bandgap. This layer is used to absorb light of different wavelengths with the perovskite layer, broadening the absorption spectrum range of the multi-junction solar cell and improving its photoelectric conversion efficiency. Exemplarily, the third perovskite material includes APbI. z Br 3-z The material shown is defined as above, where 0 < z < 3.

[0363] In other embodiments, the second electrode in a multi-junction solar cell is a transparent electrode. This allows light to enter the multi-junction solar cell through the second electrode. Furthermore, the band gap of the second light-absorbing layer is Eg3, 1.65 eV ≤ Eg3 ≤ 2.2 eV; the band gap of the perovskite layer is Eg4, 1.1 eV ≤ Eg4 ≤ 1.6 eV. Thus, light entering from the second electrode first passes through the second light-absorbing layer, which absorbs short-wavelength light (such as ultraviolet to visible light), and then enters the perovskite layer, where it absorbs longer-wavelength light (such as near-infrared light). This allows for greater utilization of different wavelengths of light, improving the photoelectric conversion efficiency of the multi-junction solar cell. Furthermore, the second light-absorbing layer, acting as the top cell's light-absorbing layer, absorbs ultraviolet-visible light, protecting the perovskite layer as the bottom cell's light-absorbing layer.

[0364] In some embodiments, a multi-junction solar cell includes a first electrode, a perovskite layer, an interconnect layer, a second light-absorbing layer, and a second electrode stacked together, with the interconnect layer located between the perovskite layer and the second light-absorbing layer. The interconnect layer may include a carrier recombination layer or a tunneling layer. Thus, the multi-junction solar cell forms a monolithic integrated tandem cell, with two cell units connected by an interconnect layer (e.g., through a carrier recombination layer or a tunneling layer) to achieve current matching between the two cell units. It has a relatively smaller size, can absorb light of different wavelengths, broadens the absorption spectrum range of the multi-junction solar cell, and improves the photoelectric conversion efficiency of the multi-junction solar cell.

[0365] In some embodiments, a multijunction solar cell includes a first electrode, a perovskite layer, a tunneling layer, a second light-absorbing layer, and a second electrode stacked together, with the tunneling layer located between the perovskite layer and the second light-absorbing layer.

[0366] In some implementations, a multijunction solar cell includes a first charge transport layer, a second charge transport layer, a third charge transport layer, and a fourth charge transport layer.

[0367] In this application, the first charge transport layer, the second charge transport layer, the third charge transport layer, and the fourth charge transport layer are used to transport the first charge carrier, the second charge carrier, the third charge carrier, and the fourth charge carrier, respectively. One of the first charge carrier and the second charge carrier is an electron and the other is a hole. One of the third charge carrier and the fourth charge carrier is an electron and the other is a hole.

[0368] In some embodiments, a multi-junction solar cell includes a first electrode, an optional first charge transport layer, a perovskite layer, an optional second charge transport layer, a carrier recombination layer or a tunneling layer, an optional third charge transport layer, a second light absorption layer, an optional fourth charge transport layer, and a second electrode, all stacked together. Where the first to fourth charge carriers are present, the first and third charge transport layers are identical and selected from either an electron transport layer or a hole transport layer, and the second and fourth charge transport layers are identical and selected from either an electron transport layer or a hole transport layer. Thus, a first electrode, an optional first charge transport layer, a perovskite layer, and an optional second charge transport layer form a first battery cell; an optional third charge transport layer, a second light absorption layer, an optional fourth charge transport layer, and a second electrode form a second battery cell. A carrier recombination layer is used to recombine and annihilate electrons generated from the perovskite layer and holes generated from the second light absorption layer (or holes generated from the perovskite layer and electrons generated from the second light absorption layer) that are transported towards the carrier recombination layer, thereby achieving low-ohmic tunnel recombination between the first battery cell containing the perovskite layer and the second battery cell containing the second light absorption layer, ensuring the connectivity between the two battery cells. A tunneling layer is located between the two battery cells, and its main function is to achieve efficient transport of electrons and holes. Through the tunneling effect, the tunneling layer allows electrons and holes to be transported from the bottom battery to the top battery, thereby reducing energy loss due to electron thermal relaxation and improving the photoelectric conversion efficiency of the battery. Exemplarily, the second light absorption layer includes a second perovskite material, thus resulting in a perovskite-perovskite multi-junction solar cell. In another example, the second light-absorbing layer comprises crystalline silicon, thereby resulting in a perovskite-crystalline silicon multijunction solar cell.

[0369] In some embodiments of this application, multi-junction solar cells may include all four charge transport layers simultaneously, or may include only one or more of them; this is not limited here. The presence of charge transport layers helps to extract and transport electrons or holes generated by the perovskite layer or the second light-absorbing layer, enhancing the extraction and transport effect of electrons and holes and improving the performance of the multi-junction solar cell. The materials for the corresponding electron transport layer and hole transport layer are selected as defined above; the materials for the electron transport layer or hole transport layer corresponding to the first and second cell units may be the same or different.

[0370] In some embodiments, a multi-junction solar cell includes a first electrode, a hole transport layer, a perovskite layer, an electron transport layer, a carrier recombination layer or a tunneling layer, an optional hole transport layer, a second light absorption layer, an optional electron transport layer, and a second electrode, all stacked together.

[0371] In this application, the carrier recombination layer comprises one or more of the following: metallic materials, transparent conductive oxides, and carbon materials. Further, the transparent conductive oxide layer comprises, but is not limited to, one or more of the following: fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), indium gallium zinc oxide (IGZO), and antimony-doped tin oxide (ATO). Further, the metallic materials include, but are not limited to, one or more of the following: gold, copper, silver, platinum, aluminum, and iron. Further, the carbon materials include, but are not limited to, one or more of the following: graphite, graphene, and carbon nanotubes.

[0372] In some implementations, the thickness of the carrier recombination layer is 0.1 nm to 200 nm. For example, it can be 0.1 nm, 0.8 nm, 1 nm, 2 nm, 10 nm, 30 nm, 50 nm, 90 nm, 100 nm, 130 nm, 150 nm, 160 nm, 200 nm, or any two of the above values ​​as endpoints.

[0373] In some implementations, the components of the tunneling layer include, but are not limited to, PEDOT (poly-3,4-ethylenedioxythiophene), transparent metal oxides, etc.

[0374] In other embodiments, a multi-junction solar cell includes a first electrode, a perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light-absorbing layer, and a second electrode stacked together. The third electrode, insulating layer, and fourth electrode are stacked between the perovskite layer and the second light-absorbing layer. The third electrode is positioned on the side of the insulating layer facing the perovskite layer, and the fourth electrode is positioned on the side of the insulating layer facing the second light-absorbing layer. In this way, the multi-junction solar cell forms a mechanically stacked cell. The insulating layer isolates the two cell units, preventing direct parallel connection of charge carriers and eliminating the need for current matching. Furthermore, each cell unit has its own independent positive and negative electrodes for current extraction, allowing for flexible circuit adjustments.

[0375] In some embodiments, a multi-junction solar cell includes a first electrode, an optional fifth charge transport layer, a perovskite layer, an optional sixth charge transport layer, a third electrode, an insulating layer, a fourth electrode, an optional seventh charge transport layer, a second light-absorbing layer, an optional eighth charge transport layer, and a second electrode stacked together. The fifth charge transport layer is selected from either a hole transport layer or an electron transport layer; the sixth charge transport layer is selected from either a hole transport layer or an electron transport layer different from the fifth charge transport layer; the seventh charge transport layer is selected from either a hole transport layer or an electron transport layer; and the eighth charge transport layer is selected from either a hole transport layer or an electron transport layer different from the seventh charge transport layer. The definitions and material selections of the corresponding hole transport layers or electron transport layers are as described above and will not be repeated here. Thus, a first electrode, optionally a fifth charge transport layer, a perovskite layer, optionally a sixth charge transport layer, and a third electrode form a first battery cell; a fourth electrode, optionally a seventh charge transport layer, a second light-absorbing layer, optionally an eighth charge transport layer, and a second electrode form a second battery cell. The first and second battery cells are electrically isolated by an insulating layer. Each battery cell has two electrodes, for a total of four electrodes. The circuits of the two battery cells are independent of each other, forming a four-terminal multi-junction solar cell. This allows for adjustment of the current in the multi-junction solar cell. Exemplarily, the second light-absorbing layer comprises a second perovskite material, resulting in a perovskite-perovskite multi-junction solar cell. In another example, the second light-absorbing layer comprises crystalline silicon, resulting in a perovskite-crystalline silicon multi-junction solar cell.

[0376] Furthermore, since the third and fourth electrodes are located in the middle of the multi-junction solar cell, in order to further increase the light energy utilization of the multi-junction solar cell and enable the remaining light after absorption by one cell to enter the next cell, the third and fourth electrodes can be set as light-transmitting electrodes, and the materials can be selected from one or more of the above-mentioned transparent conductive oxides.

[0377] In some embodiments, the material of the insulating layer includes, but is not limited to, glass or an insulating adhesive. Further, the glass is transparent glass; further, the insulating adhesive is a transparent adhesive.

[0378] In some embodiments, the multi-junction solar cell may also include multi-junction solar cells composed of 3, 4, or 5 cells, such as 3-junction solar cells, 4-junction solar cells, 5-junction solar cells, etc., and may be mechanically stacked cells, monolithically integrated stacked cells, or hybrid stacked cells composed of both, without limitation here.

[0379] In some embodiments of this application, the optoelectronic device includes at least one charge transport layer stacked with the perovskite layer.

[0380] In some embodiments of this application, the optoelectronic device includes a perovskite layer and at least one charge transport layer disposed between a first electrode and a second electrode.

[0381] In some embodiments of this application, the optoelectronic device includes a perovskite layer 100 and a charge transport layer 300 stacked together, as can be seen in [reference]. Figure 5 Furthermore, the charge transport layer can be either an electron transport layer or a hole transport layer. Figure 5 The perovskite layer and charge transport layer are arranged adjacently. It can be understood that other functional layers, such as one or more of the following, can be arranged between the perovskite layer and the charge transport layer: a barrier layer, a buffer layer, and an interface layer. The charge transport layer can be a suitable first charge transport layer as described in the context.

[0382] In some embodiments of this application, the optoelectronic device includes a first charge transport layer 310, a perovskite layer 100, and a second charge transport layer 320 stacked together. The first charge transport layer 310 and the second charge transport layer 320 are respectively disposed on opposite sides of the perovskite layer 100 in the thickness direction (Z direction) of the perovskite layer. (See reference...) Figure 6 It can be seen that... Figure 6 The perovskite layer and the first charge transport layer and the second charge transport layer located on both sides are respectively arranged adjacent to each other. It can be understood that the first charge transport layer and the second charge transport layer can be arranged independently without being adjacent to the perovskite layer. For example, other functional layers, such as one or more of the first charge transport layer, the second charge transport layer and the perovskite layer, can be arranged between them.

[0383] In some embodiments of this application, the optoelectronic device includes a first electrode and a second electrode. The first electrode is located on the side of the first charge transport layer away from the perovskite layer, and the second electrode is located on the side of the light-absorbing layer away from the first charge transport layer. The first charge transport layer can be an electron transport layer or a hole transport layer. In some embodiments, the optoelectronic device further includes a second charge transport layer located between the perovskite layer and the second electrode.

[0384] In some embodiments of this application, the optoelectronic device includes a first charge transport layer and a second charge transport layer, wherein the first charge transport layer and the second charge transport layer are located on opposite sides of the perovskite layer in the thickness direction of the perovskite layer. Further, one of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer. In some embodiments, the first charge transport layer is a hole transport layer. In other embodiments, the first charge transport layer is an electron transport layer.

[0385] Figure 7This is a schematic diagram of the structure of an optoelectronic device according to one embodiment of this application. The optoelectronic device includes a first electrode 410, a first charge transport layer 310, a perovskite layer 100, a second charge transport layer 320, and a second electrode 420 stacked together. In the thickness direction (Z direction) of the perovskite layer, the first charge transport layer 310 and the second charge transport layer 320 are respectively disposed on opposite sides of the perovskite layer 100. The first electrode 410 is disposed on the side of the first charge transport layer 310 away from the perovskite layer 100, and the second electrode 420 is disposed on the side of the second charge transport layer 320 away from the perovskite layer 100. In some embodiments, the first electrode is a transparent electrode, and the second electrode is a metal electrode.

[0386] Figure 8 This is a schematic diagram of the structure of an optoelectronic device according to an embodiment of this application. The optoelectronic device 10 includes a substrate layer 500, a first electrode 410, a first charge transport layer 310, a perovskite layer 100, a second charge transport layer 320, and a second electrode 420 stacked together. In the thickness direction (Z direction) of the perovskite layer, the first charge transport layer 310 and the second charge transport layer 320 are respectively disposed on both sides of the perovskite layer 100. The first electrode 410 is disposed on the side of the first charge transport layer 310 away from the perovskite layer 100, and the second electrode 420 is disposed on the side of the second charge transport layer 320 away from the perovskite layer 100. The substrate layer 500 is disposed on the side of the first electrode 410 away from the perovskite layer 100.

[0387] In some embodiments of this application, the optoelectronic device can be a formal structure or an inverse structure.

[0388] In some embodiments of this application, the optoelectronic device is an inverted pin structure or a formal nip structure.

[0389] Figure 9 This is a schematic diagram of the structure of an inverted optoelectronic device according to one embodiment of this application. The optoelectronic device 10 includes a substrate layer 500, an incident light-side electrode 700, a hole transport layer 610, a perovskite layer 100, an electron transport layer 620, and a back electrode 800, all stacked together. In the thickness direction (Z direction) of the perovskite layer, the hole transport layer 610 and the electron transport layer 620 are respectively disposed on opposite sides of the perovskite layer 100. The incident light-side electrode 700 is disposed on the side of the hole transport layer 610 away from the perovskite layer 100, and the back electrode 800 is disposed on the side of the electron transport layer 620 away from the perovskite layer 100. The substrate layer 500 is disposed on the side of the incident light-side electrode 700 away from the perovskite layer 100. In some embodiments, the first surface faces the electron transport layer 620, and the second surface faces the hole transport layer 610. In other embodiments, the first surface faces the hole transport layer 610, and the second surface faces the electron transport layer 620.

[0390] Figure 10 This is a schematic diagram of the formal structure of an optoelectronic device according to one embodiment of this application. The optoelectronic device 10 includes a substrate layer 500, an incident light-side electrode 700, an electron transport layer 620, a perovskite layer 100, a hole transport layer 610, and a back electrode 800, all stacked together. In the thickness direction (Z direction) of the perovskite layer, the hole transport layer 610 and the electron transport layer 620 are respectively disposed on opposite sides of the perovskite layer 100. The incident light-side electrode 700 is disposed on the side of the electron transport layer 620 away from the perovskite layer 100, and the back electrode 800 is disposed on the side of the hole transport layer 610 away from the perovskite layer 100. The substrate layer 500 is disposed on the side of the incident light-side electrode 700 away from the perovskite layer 100. In some embodiments, the first surface faces the electron transport layer 620, and the second surface faces the hole transport layer 610. In other embodiments, the first surface faces the hole transport layer 610, and the second surface faces the electron transport layer 620.

[0391] It is understood that the hole transport layer includes hole transport materials. Without limitation, the hole transport materials in the hole transport layer may include, but are not limited to, one or more of the following materials and their derivatives: hole transport organic materials and hole transport inorganic materials.

[0392] In some embodiments of this application, the hole transport material includes hole transport organics. Without limitation, the hole transport organics may include, but are not limited to, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly-3-hexylthiophene, methoxytriphenylamine-fluoroformamidinium, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, polythiophene, carbazole-based monomers or polymers (such as [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid... The hole transport material comprises one or more of the following: [4-(9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid (Br-4PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dibromo-9H-carbazole-9-yl)ethyl]phosphonic acid (Br-2PACz), triphenylamine monomers or polymers, aromatic monomers or polymers, etc. In some embodiments of this application, the hole transport material includes hole transport inorganic substances. Non-limitingly, the hole transport inorganic material may include, but is not limited to, one or more of metal oxides (which may be referred to as the first metal oxide), cuprous iodide and cuprous thiocyanate, molybdenum sulfide, etc.; wherein, the metal oxide in the hole transport material may include, but is not limited to, one or more of nickel oxide, molybdenum oxide, cuprous oxide, vanadium oxide, and tungsten oxide. As a non-limiting example, in the hole transport material, the metal element in the first metal oxide may include one or more of nickel (Ni), molybdenum (Mo), copper (Cu), vanadium (V), and tungsten (W).

[0393] It is understood that the electron transport layer includes electron transport materials. Without limitation, the electron transport materials in the electron transport layer may include, but are not limited to, one or more of the following materials and their derivatives, impurities, and passivated materials: fullerenes and their derivatives, imide compounds, metal oxides, metal sulfides, metal fluorides, cyano-containing polyphenylacetylene, boron-containing polymers, copper bath, red phenanthroline, hydroxyquinoline aluminum, oxadiazole compounds, quinone compounds, etc.; exemplarily, fullerenes and their derivatives include, but are not limited to, [6,6]-phenyl-C 61 methyl butyrate (PC) 61BM), [6,6]-phenyl-C 71 methyl butyrate (PC) 71 BM), Fullerene C 60 Fullerene C 61 Fullerene C 70 The imide compounds include, but are not limited to, one or more of perylene imide materials, naphthalene imide materials, phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide; metal oxides (which may be referred to as second metal oxides), perylene imide materials, naphthalene imide materials, etc. Among these, the metal oxides in the electron transport materials may include one or more of tin oxide, zinc oxide, etc. As a non-limiting example, in the electron transport materials, the metal element in the second metal oxide may include one or more of tin (Sn), magnesium (Mg), indium (In), molybdenum (Mo), titanium (Ti), and zinc (Zn). Metal sulfides include indium sulfide or zinc sulfide; metal fluorides include one or more of lithium fluoride (LiF), sodium fluoride, magnesium fluoride (MgF2), and calcium fluoride (CaF2).

[0394] Without limitation, the metal oxide in the first charge transport layer may refer to a first metal oxide (in which case the first charge transport layer is a hole transport layer) or a second metal oxide (in which case the first charge transport layer is an electron transport layer).

[0395] In some embodiments of this application, the first charge transport layer is a hole transport layer. In this case, in addition to the first metal oxide, the first charge transport layer may also include one or more other types of hole transport materials, as described above.

[0396] In some embodiments of this application, the first charge transport layer is an electron transport layer. In this case, in addition to the second metal oxide, the first charge transport layer may also include one or more other types of electron transport materials, as described above.

[0397] In this application, the terms "first metal oxide" and "second metal oxide" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features.

[0398] In this application, unless otherwise specified, "perovskite material" refers to a class of semiconductor materials having a crystal structure similar to that of the natural mineral calcium titanate (CaTiO3). Typically, perovskite materials comprise a first cation, a second cation, and an anion. The anion and the second cation together form an octahedral structure, with the anion located at the body center of the octahedron and the second cation located at the six vertices. The first cation fills the voids between the octahedra to achieve charge balance and maintain crystal structure stability. Adjacent octahedral structures are connected by sharing vertices, thus forming a continuous crystal lattice structure. Unless otherwise specified, the first cation may be denoted as A and referred to as an A-site ion or A-site cation; the second cation may be denoted as B and referred to as a B-site ion or B-site cation; and the anion may be denoted as X and referred to as an X-site ion or X-site anion.

[0399] In some embodiments of this application, the first cation is relatively large and the second cation is relatively small.

[0400] In some embodiments of this application, the perovskite tolerance factor is in the range of 0.85 to 1.0. This is advantageous for obtaining a more stable perovskite crystal structure.

[0401] In this application, "perovskite tolerance factor (t)" has a meaning known in the art, and its calculation formula is as follows: , where R A R is the ionic radius of the A-site ion. B R is the ionic radius of the B-site ion. X Let X be the ionic radius of the ion at the X site.

[0402] The first cation in a perovskite material can be an organic cation, an inorganic cation, or a mixture of organic and inorganic cations; it is understood that the first cation in a perovskite material can be one or more types. In some embodiments of this application, the first cation includes a monovalent cation, and more specifically, it can be a monovalent cation.

[0403] The second cation in a perovskite material can be an organic cation, an inorganic cation, or a mixture of organic and inorganic cations; it is understood that the type of the second cation in the perovskite material can be one or more. In some embodiments of this application, the second cation includes a divalent cation, and more specifically, a divalent cation. In some embodiments of this application, the second cation includes a combination of a monovalent cation (denoted as C) and a trivalent cation (denoted as D).

[0404] In some embodiments of this application, the anions in the perovskite material include one or more of halogens and pseudohalogens. "Pseudohalogens," also known as halogen-like substances, refer to atomic groups composed of two or more elements that, as a whole, possess chemical properties similar to halogens. Anionic pseudohalogens may be referred to as pseudohalogen anions. Non-limiting examples of pseudohalogens may include one or more of thiocyano (SCN), oxocyano (OCN), etc. Non-limiting examples of pseudohalogen anions may include SCN. - OCN - CNO - OSCN - SH - CN - SeCN - One or more of the following. It is understood that pseudohalogens present in perovskite materials can act as X-site ions. In some embodiments of this application, the X-site anion is a monovalent anion.

[0405] In some embodiments of this application, the perovskite material includes perovskite-type metal halides.

[0406] Unless otherwise stated in this application, the anions in perovskite materials or perovskite-type metal halides may include one or more of halogen anions and pseudohalogen anions.

[0407] In some embodiments of this application, the anion in the perovskite material or perovskite-type metal halide is selected from one or more of halogen anions and pseudohalogen anions.

[0408] In some embodiments of this application, the perovskite material or perovskite-type metal halide may include at least one of ABX3 and A2CDX6; wherein A is a monovalent cation, B is a divalent cation, X is a monovalent anion, C is a monovalent cation, and D is a trivalent cation.

[0409] Without limitation, in perovskite-type metal halides, A can be a monovalent inorganic cation, a monovalent organic cation, or a mixed cation of monovalent organic and monovalent inorganic cations.

[0410] In some embodiments of this application, in the perovskite material or perovskite-type metal halide, A is a monovalent inorganic cation; optionally, A includes Li. + Na + K + 、Rb + and Cs + One or more of them.

[0411] In some embodiments of this application, in the perovskite material or perovskite-type metal halide, A is a monovalent organic cation. Optionally, A includes at least one of methylamino, ethylamino, propylamino, butylamino, pentamino, hexamino, formamidinyl, and imidazolyl.

[0412] Without limitation, the A in perovskite materials or perovskite-type metal halides may include Cs. + K + 、Rb + Li + One or more of monovalent organic cations, etc.

[0413] Non-limiting examples of monovalent organic cations include (NR) 31 R 32 R 33 R 34 ) + 、(R 31 R 32 N=CR 33 R 34 ) + 、(R 31 R 32 NC(R 35 )=NR 33 R 34 ) + or (R) 31 R 32 NC(NR 35 R 36 )=R 33 R 34 ) + , where R 31 R 32 R 33 R 34 R 35 and R 36 Each is independently selected from H and C. 1-20 Alkyl, aryl, substituted C 1-20 Alkyl or substituted aryl; wherein, C 1-20 Alkyl and substituted C 1-20 The "C" in alkyl 1-20 Each alkyl group can be independently selected as C. 1-15 Alkyl, further optionally C 1-10 Alkyl, and further optionally C 1-8 Alkyl, and further optionally C 1-6 Alkyl, and further optionally C 1-4 Alkyl, and further optionally C 1-3 Alkyl groups, and further optionally methyl groups. The "aryl" in aryl groups and substituted aryl groups can each independently be C10.6-20 Aryl, further optionally C 6-12 Aryl, and further alternatively C 6-10 Aryl, further optionally phenyl or naphthyl, and further optionally phenyl. Substituted C 1-20 In alkyl and substituted aryl groups, each substituent is independently C1. 1-10 Hydrocarbon group, further optionally C 1-6 Alkyl or C 6-10 Aryl, and may further be methyl or phenyl.

[0414] Non-limiting examples of monovalent organic cations include CH3NH3 + (Methylamine, MA) + ), NH2CH=NH2 + (Formamidin, can be written as FA) + ), dimethylamine cation, ethylamine cation, propylamine cation, butylamine cation, pentamine cation, hexamine cation, imidazole cation.

[0415] In some embodiments of this application, in the perovskite-type metal halide, A includes a monovalent organic cation and Cs. + One or more of them.

[0416] In some embodiments of this application, in the perovskite material or perovskite-type metal halide, B includes divalent cations of one or more of the following elements: lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium.

[0417] In some embodiments of this application, in the perovskite material or perovskite-type metal halide, C represents a monovalent inorganic cation; optionally, C includes Cs. + Ag + K + and Ru + One or more of them.

[0418] In some embodiments of this application, D represents a trivalent metal cation; optionally, D includes Bi. 3+ Ni 3+ Fe 3+ Sb 3+ In 3+ and Cu 3+ One or more of them, and further optionally, D includes In 3+ Bi 3+ Sb 3+ One or more of them.

[0419] In some embodiments of this application, X represents a halide anion; optionally, X includes F. -Cl - ,Br - and I - One or more of them, and optionally, X includes Cl - ,Br - and I - One or more of them.

[0420] In some embodiments of this application, the perovskite material includes perovskite-type metal halides, and the monovalent cation of the perovskite material includes FA. + and Cs + .

[0421] In some embodiments of this application, the perovskite material includes perovskite-type metal halides, and the monovalent cation of the perovskite material includes FA. + MA + and Cs + .

[0422] In some embodiments of this application, FA + The molar percentage of monovalent cations in perovskite materials is 0.8~1.0.

[0423] In some embodiments of this application, MA + The molar percentage of monovalent cations in perovskite materials is 0 to 1.0.

[0424] In some embodiments of this application, Cs + The molar percentage of monovalent cations in perovskite materials is 0~1.0.

[0425] In some embodiments of this application, the perovskite material includes perovskite-type metal halides, and the divalent cation of the perovskite material includes Pb. 2+ Furthermore, it can be used for Pb 2+ .

[0426] In some embodiments of this application, the perovskite material includes perovskite-type metal halides, and the monovalent anions of the perovskite material include iodide anions and bromide anions.

[0427] In some embodiments of this application, the molar percentage of iodine anions in the monovalent anions of the perovskite material is 0 to 1.0.

[0428] In some embodiments of this application, the molar percentage of bromide anions in the monovalent anions of perovskite materials is 0 to 1.0.

[0429] In this application, unless otherwise specified, the term "aryl" refers to an aromatic hydrocarbon group derived from an aromatic cyclic hydrocarbon compound by losing one hydrogen atom, that is, forming a monovalent linking site directly on the ring. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl; for polycyclic rings, at least one is an aromatic ring system. For example, "C6- 10 "Aryl" refers to an aryl group containing 6 to 10 carbon atoms. Each time it appears, it can be independently C6 aryl, C8 aryl, C9 aryl, or C6 aryl. 10 Aryl. For example, "C6- 20 "Aryl" refers to an aryl group containing 6 to 20 carbon atoms. Each time it appears, it can be independently, but is not limited to, C6 aryl (such as phenyl), C8 aryl (such as benzocyclobutenyl), C9 aryl (such as indenyl), C6 aryl, C8 aryl, C9 ... 10 Aryl (such as naphthyl), C 12 Aryl (such as acenaphthene, biphenyl), C 13 Aryl (such as fluorene), C 14 Aryl (such as anthracene, phenanthrene), C 18 Aryl (such as phenylene) or C 20 Aryl groups (such as dinaphthalene-based phenyl groups). Examples of suitable aromatic cyclic hydrocarbons that can be derived to form aryl groups include, but are not limited to: benzene, benzocyclobutene, biphenyl, indene, naphthalene, acenaphthene, fluorene, anthracene, phenanthrene, triphenylene, dinaphthalene-based phenyl groups and their derivatives.

[0430] Without limitation, in perovskite-type metal halides, B can be an inorganic cation.

[0431] In some embodiments of this application, in the perovskite-type metal halide, B includes a divalent cation. Optionally, B includes a divalent cation of one or more of the following elements: lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, europium, etc.

[0432] Without limitation, B in perovskite-type metal halides may include Pb. 2+ Sn 2+ Fe 2+ Mn 2+ Ni 2+ 、Ge 2+ Co 2+ and Sb 2+ One or more of them.

[0433] In perovskite-type metal halides, X can be an inorganic anion, an organic anion, or a mixture of organic and inorganic anions.

[0434] In some embodiments of this application, in the perovskite-type metal halide, X is a halide anion; optionally, X includes F. - Cl- ,Br - and I - One or more of them, and optionally, X includes Cl - ,Br - and I - One or more of the following. In some embodiments, X in the perovskite metal halide can be I. - ,Br - and Cl - One or more of them.

[0435] Without limitation, X in perovskite-type metal halides may include I. - ,Br - One or two of them. X can be I. - ,Br - Or a combination thereof. In some embodiments, X is I. - .

[0436] Non-limitingly, in perovskite-type metal halides, C can be an inorganic cation, an organic cation, or a mixed organic-inorganic cation. In some embodiments of this application, C is a monovalent inorganic cation; optionally, C includes Cs. + Ag + K + and Ru + One or more of the following. In some embodiments of this application, C can be silver ions (Ag). + ).

[0437] In a non-limiting sense, in perovskite metal halides, D can be an inorganic cation, an organic cation, or a mixed organic-inorganic cation.

[0438] In some embodiments of this application, D is a trivalent metal cation; optionally, D includes Bi. 3+ Ni 3+ Fe 3+ Sb 3+ In 3+ , and Cu 3+ One or more of them, and further optionally, D includes In 3+ Bi 3+ Sb 3+ One or more of these. In some embodiments, D is a bismuth cation (Bi). 3+ ), antimony cation (Sb) 3+ ) and indium cations (In 3+ At least one of the following.

[0439] In some embodiments of this application, the mass percentage of the first perovskite material in the perovskite layer is greater than or equal to 95%, and can be selected as 95% to 100%.

[0440] Non-limiting, the first electrode and the second electrode may each independently comprise a conductive material. The conductive material in the first electrode and the conductive material in the second electrode may each independently comprise an organic conductive material, an inorganic conductive material, or an organic-inorganic mixed conductive material.

[0441] As an example, organic-inorganic hybrid conductive materials include both organic and inorganic conductive components.

[0442] As a non-limiting example, organic conductive materials may include conductive polymers, wherein non-limiting examples of conductive polymers may include one or more of PEDOT (poly-3,4-ethylenedioxythiophene), polythiophene, polyacetylene, etc.

[0443] As a non-limiting example, inorganic conductive materials may include one or more of transparent conductive oxides, metallic conductive materials, and carbon conductive materials. Non-limiting examples of transparent conductive oxides may include one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), indium gallium zinc oxide (IGZO), and antimony-doped tin oxide (ATO). Metallic conductive materials may include one or more of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), bismuth (Bi), platinum (Pt), magnesium (Mg), molybdenum (Mo), and tungsten (W).

[0444] In some embodiments of this application, non-limiting examples of inorganic conductive materials include metallic conductive materials. Further, metallic conductive materials may include any one of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), bismuth (Bi), platinum (Pt), magnesium (Mg), or any suitable mixture of the aforementioned elements.

[0445] It is understood that transparent electrodes comprise transparent conductive materials. In some embodiments of this application, the transparent conductive material contained in the transparent electrode may include conductive oxides. Non-limitingly, the conductive oxide in the transparent electrode may include one or more of indium tin oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, and aluminum-doped zinc oxide. In some embodiments of this application, the transparent conductive material in the transparent electrode may be exemplified, but is not limited to, one or more of the following materials: fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), indium gallium zinc oxide (IGZO), and antimony-doped tin oxide (ATO), etc.

[0446] In some embodiments of this application, one of the first electrode and the second electrode is a metal electrode. The metal electrode may include one or more metallic elements selected from gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), bismuth (Bi), platinum (Pt), magnesium (Mg), molybdenum (Mo), tungsten (W), etc.

[0447] In some embodiments of this application, the electrode material of the first electrode includes at least one of indium tin oxide (ITO), lanthanide-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), boron-doped zinc oxide (BZO), aluminum-doped zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), tungsten-doped indium oxide (IWO), Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W and their alloys, graphite, graphene, and carbon nanotubes; optionally, it includes at least one of Ag, Cu, C, Au, Al, ITO, AZO, BZO or IZO, and further optionally, it includes at least one of Cu, Ag, and Au.

[0448] In some embodiments of this application, the second electrode is a back electrode. The back electrode may include one or more of indium tin oxide (ITO), lanthanide-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), boron-doped zinc oxide (BZO), aluminum-doped zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), and tungsten-doped indium oxide (IWO), and the metal may include one or more metallic elements selected from Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, and Mg.

[0449] The substrate layer involved in the embodiments or examples of this application can be, but is not limited to, a rigid substrate layer or a flexible substrate layer. A non-limiting example of a rigid substrate layer is a glass substrate layer. In some embodiments, the rigid substrate layer is transparent glass. In some embodiments, the substrate layer is provided by a transparent conductive oxide film glass (TCO glass), wherein the glass serves as the substrate layer, and the TCO is a transparent conductive oxide film material; non-limiting examples of TCO materials include ITO, FTO, etc.

[0450] In some embodiments of this application, the material of the flexible substrate layer may be, for example, but not limited to, organic polymer materials. Furthermore, it may be composed of one or more of the following materials mixed in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0451] It is understood that the structure of the optoelectronic device involved in this application is not limited to the structural layers listed above. Other functional layers or interface layers, such as buffer layers and insertion layers, can also be introduced as needed. In some embodiments, the optoelectronic device can be provided with a buffer layer of appropriate energy level, which can play one or more roles such as reducing the energy level barrier, promoting energy level matching, improving carrier extraction efficiency, passivating interface defect states, protecting the light-absorbing layer, inhibiting the oxidation and decomposition of water molecules and oxygen on the battery, improving energy conversion efficiency, and improving device stability. Depending on the location of the buffer layer, the type of buffer layer can include four types: a buffer layer between the hole transport layer and the anode, a buffer layer between the electron transport layer and the cathode, a buffer layer between the hole transport layer and the light-absorbing layer, and a buffer layer between the electron transport layer and the light-absorbing layer. Materials that can be used for buffer layers in optoelectronic devices can include, but are not limited to, Cu2O, NiO, AZO, TiO2, etc. In some embodiments, an insertion layer can be provided between the electron transport layer and the second electrode. This insertion layer is used to block the transport of holes and can also be called a hole blocking layer. Examples of materials for the insertion layer include bath copper phosphate (BCP) and tin oxide.

[0452] In some embodiments of this application, the optoelectronic device includes the following stacked structure: a transparent conductive glass substrate layer, a hole transport layer, a perovskite layer, an electron transport layer, a hole blocking layer (optional), and a back electrode (the back electrode can be a metal electrode or a transparent conductive electrode).

[0453] In this application, unless otherwise specified, "sequentially stacked" refers to the direction of stacking between layered structures and does not constitute a limitation on the structural composition of the stacked body. For example, "including stacked structural layer A and structural layer B" means that the stacking direction of structural layer A and structural layer B is along their respective thickness directions; that is, the thickness direction of structural layer A is consistent with or substantially consistent with the thickness direction of structural layer B. It is understood that other intermediate structural layers are allowed to be set between structural layer A and structural layer B.

[0454] The following are some other descriptions of the structure of optoelectronic devices.

[0455] In some embodiments of this application, the optoelectronic device 10 includes Figure 11 The structure shown ( Figure 11 The structure shown is a schematic cross-sectional view of the device along its thickness direction. The optoelectronic device 10 includes a substrate layer 500, a first electrode 410, a first transport layer 310, a perovskite layer 100, a second transport layer 320, and a second electrode 420 stacked together. The positional relationship of each structural layer is as follows: Figure 8Similarly, the optoelectronic device 10 is further provided with three types of cross-layer channel regions: a first channel region P1, a second channel region P2, and a third channel region P3. Utilizing the channel group formed by the first channel region P1, the second channel region P2, and the third channel region P3, the solar cell is divided into several series-connected sub-cells. Each sub-cell includes a first channel region P1, a second channel region P2, and a third channel region P3 arranged sequentially, with the second channel region P2 located between the first channel region P1 and the third channel region P3. The first channel region P1, the second channel region P2, and the third channel region P3 can be connected to the structural layers that are spaced apart, thereby connecting the circuit between the first electrode of one sub-cell and the second electrode of the adjacent sub-cell, forming a series structure. The first channel region P1, the second channel region P2, and the third channel region P3 can each be an independent linear channel region, formed by laser etching or a mask. The number of first channel regions P1, second channel regions P2, and third channel regions P3 can each be one or more independently. The number of first channel regions P1, second channel regions P2, and third channel regions P3 corresponds to the number of sub-cells. Without limitation, the first channel regions P1, second channel regions P2, and third channel regions P3 can be configured as follows: the first channel region P1 is used to divide the first electrode 410 to prevent short circuits between adjacent sub-cells; the second channel region P2 is used to penetrate and divide the second charge transport layer 320, the perovskite layer 100, and the first charge transport layer 310, with the interior of the second channel region filled with a conductive material such that both ends of the conductive material are connected to the second electrode 420 and the first electrode 410 respectively. The material of this conductive material can be the same as the material of the second electrode 420 to achieve integral fabrication during the fabrication process of the second electrode 420, or it can be a different material from the second electrode 420; the third channel region P3 is used to penetrate and at least divide the second electrode 420. Figure 11 In the example, the third channel region P3 is used to penetrate and divide the second electrode 420, the second charge transport layer 320, the perovskite layer 100, and the first charge transport layer 310. One end of the third channel region P3 is connected to the surface of the first electrode 410, and the other end extends out of the outer surface of the second electrode 420. The purpose is to isolate the second electrode between two adjacent sub-cells to prevent short circuits. In this way, a series connection between adjacent sub-cells is achieved.

[0456] In some embodiments of this application, Figure 11 The substrate 500 in the structure shown is a light-incident glass substrate.

[0457] In some embodiments of this application, the filling material in the first channel region P1 of the optoelectronic device can be the same as the first charge transport layer, or it can be filled with an insulating material, as long as it can prevent short circuits between adjacent series-connected sub-cells.

[0458] In some embodiments of this application, the filling material in the second channel region P2 of the optoelectronic device may be consistent with the second electrode.

[0459] In some embodiments of this application, the width of the first channel region P1 is 10~50μm, such as 15μm, 30μm, etc.

[0460] In some embodiments of this application, the width of the second channel region P2 is 10~200μm, for example 50μm or 150μm. Further, the interval between the second channel region P2 and the first channel region P1 can be 20~80μm, for example 20μm, 30μm, or 50μm.

[0461] In some embodiments of this application, the width of the third channel region P3 is 10~50μm, such as 15μm, 25μm, etc. Further, the interval between the third channel region P3 and the second channel region P2 can be 20~100μm, such as 30μm, 50μm.

[0462] In some embodiments of this application, the optoelectronic device includes an encapsulating adhesive layer.

[0463] Encapsulating adhesive layers can be used to protect the stability of optoelectronic devices, for example, by isolating them from water, oxygen, and other corrosive substances.

[0464] In some embodiments of this application, the encapsulating adhesive layer includes one or more of the following: epoxy encapsulating adhesive, silicone encapsulating adhesive, polyurethane encapsulating adhesive, UV-curable encapsulating adhesive, ethylene-vinyl acetate copolymer, polyvinyl butyral, ethylene octene copolymer, polyisobutylene, and polyolefin encapsulating adhesive.

[0465] The encapsulating adhesive layer can be stacked using existing techniques in the field. After the optoelectronic device is fabricated, the encapsulating adhesive layer can be stacked at the final structural layer of the solar cell device. In some embodiments of this application, the final structural layer can be a second electrode. For example, lamination technology can be used to laminate the arranged optoelectronic devices or components including the optoelectronic devices with the encapsulating adhesive film, thereby creating an encapsulating adhesive layer on the side of the second electrode facing away from the light-absorbing layer.

[0466] Unless otherwise stated, the encapsulating film and encapsulating layer in this application are transparent materials.

[0467] In some embodiments of the second aspect of this application, a method for fabricating an optoelectronic device is provided, which can be used to fabricate the optoelectronic device of the first aspect of this application.

[0468] In some embodiments of this application, a method for fabricating an optoelectronic device is provided, which includes the following steps:

[0469] S100: The perovskite precursor liquid containing the first perovskite material and the first solvent is coated and dried to remove part of the first solvent, thus preparing a perovskite intermediate phase film layer.

[0470] Optionally, drying is performed on a stage at 0°C to 70°C to remove part of the first solvent;

[0471] S200: The additive dispersion is coated on the surface of the perovskite mesophase film layer and laser annealed to form a perovskite layer; wherein, the additive dispersion includes a first additive and a second solvent, and the first additive is an inorganic material.

[0472] The formed perovskite layer can be referred to the definition in the first aspect of this application;

[0473] In some embodiments, the formed perovskite layer includes a first perovskite material; the perovskite layer has a first surface and a second surface opposite to each other in the thickness direction of the perovskite layer, the first surface corresponding to the surface on which the additive dispersion is coated; the thickness direction of the perovskite layer is denoted as the Z direction; a first region with a thickness of 5 nm to 10 nm exists extending 20 nm from the first surface along the Z direction toward the interior of the perovskite layer, and a second region with a thickness of 5 nm to 10 nm exists extending 10 nm from the center of the thickness of the perovskite layer toward the first surface and the second surface, respectively; the first region is located between the first surface and the second region; the energy difference between the valence band top of the first perovskite material in the first region and the first perovskite material in the second region is denoted as A. Δ Let B be the energy level difference between the Fermi level of the first perovskite material in the first region and that of the first perovskite material in the second region. Δ Let C be the energy level difference between the conduction band bottom of the first perovskite material in the first region and that in the second region. Δ Among them, the perovskite layer satisfies at least two of the following three characteristics (t1), (t2), and (t3): (t1) A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t3) The absolute value of the band gap difference between the first perovskite material in the first region and the first perovskite material in the second region is less than or equal to 0.02 eV;

[0474] When the first surface is used for electron transport, A Δ B Δ and C Δ Each is independently greater than 0 eV, and A Δ B Δ and C ΔAt least one of them is greater than or equal to 0.08 eV; or,

[0475] When the first surface is used to transmit holes, A Δ B Δ and C Δ Each is independently less than 0 eV, and A Δ B Δ and C Δ At least one of them is less than or equal to -0.08 eV.

[0476] In this application, unless otherwise specified, "perovskite precursor solution" is in solution form and is also referred to as perovskite precursor solution.

[0477] In this application, unless otherwise specified, "precursor material for perovskite materials" refers to a material used to form the perovskite crystal structure, capable of providing the basic elements in the perovskite crystal structure. Typically, the elemental composition of the precursor material for perovskite materials matches the chemical elemental composition of the target perovskite material. For example, the target perovskite material can adopt the general structural formula ABX3, in which case the corresponding raw materials may include AX, BX2, etc., and divalent metal cations (such as Pb). 2+ The sum of the atomic ratios of the components is 1; for example, the target perovskite material can be FA. 0.95 MA 0.05 Pb(I 0.95 Br 0.05 3. At this time, the divalent metal cation is Pb. 2+ .

[0478] In step S100, during the drying process to remove part of the first solvent, the stage temperature is denoted as T1. Unless otherwise specified, T1 is lower than the perovskite crystallization temperature.

[0479] In this application, unless otherwise specified, "additive dispersion" refers to a liquid mixture containing a first additive and a second solvent, which may be in the form of a solution, a stable dispersion of nanoparticles, a colloid, a suspension, an emulsion, a microemulsion, a foam, an aerosol, etc.

[0480] Unless otherwise stated in this application, "perovskite crystallization temperature" refers to the initial crystallization temperature of perovskite, which is the lowest temperature at which the perovskite precursor begins to undergo a phase transition and transform into perovskite crystals.

[0481] In some embodiments of this application, the drying temperature is lower than the perovskite crystallization temperature, and in some embodiments, a perovskite intermediate phase film layer with no significant crystallinity can be obtained.

[0482] Unless otherwise specified, the perovskite mesophase film is a wet film, meaning that some solvent remains.

[0483] Unless otherwise stated in this application, "the mass percentage of solvent residue in the perovskite mesophase film (F)" S Using the initial solvent content before solvent removal as a baseline, the following method can be used to confirm the solvent content: Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is used to perform in-depth analysis of the dried perovskite mesophase film layer, and the solvent molecule signal intensity (I1) at different depths is monitored. This is then compared with the signal intensity (I0) in the perovskite mesophase film layer after coating but before solvent removal. This yields the solvent mass M1 in the sample after partial solvent removal and the initial solvent mass M0 in the sample after coating but before solvent removal, thus obtaining the percentage of residual solvent F in the perovskite mesophase film layer. S =M1 / M0×100%.

[0484] TOF-SIMS detection can be performed using instruments such as PHI nanoTOF Ⅲ Time-of-Flight SIMS, and a suitable ion source (such as Cs) can be selected. + Bi3 ++ (etc.), primary ion energy (e.g., 0.5keV~30keV), imaging region size (e.g., 500×500μm) 2 100×100μm 2 Test parameters such as mass range and mass resolution, sputtering parameters (such as sputtering time, sputtering area, sputtering rate, analysis mode (such as depth profile mode, neutralization mode, etc.)) are used to obtain the three-dimensional distribution information of the corresponding elements or components in the sample to be tested.

[0485] In this application, unless otherwise stated, "perovskite mesophase film without significant crystallinity" means that the perovskite mesophase film has no obvious perovskite crystal phase.

[0486] In some embodiments of this application, the X-ray diffraction pattern of the perovskite mesophase film does not show the characteristic peaks of the perovskite crystalline phase; this characteristic can be used to confirm the "non-significant crystallinity" property of the perovskite mesophase film.

[0487] Unless otherwise stated, X-ray diffraction (XRD) is used in this application to analyze the crystallization of the perovskite phase. The XRD pattern of the perovskite intermediate phase film in this application does not show obvious characteristic peaks of the perovskite phase. After annealing, sharp diffraction peaks of the perovskite phase can be observed in the XRD pattern of the obtained perovskite layer.

[0488] Unless otherwise specified in this application, XRD testing can be performed using the following instruments and methods: an X-ray source of Cu Kα1 (wavelength 1.54056 Å), a scanning range (2θ) of 0–80°, and a scanning rate of 10° / min. Furthermore, a TWIST-TUBE light source and an EIGER2 detector can be selected. Even further, a Bruker D8 DISCOVER instrument can be used. The incident angle can be selected from 2° to 90°. See also the test methods in the Examples section below.

[0489] It is understandable that the temperature for laser annealing is higher than or equal to the crystallization temperature of perovskite.

[0490] For a wet film obtained by coating a perovskite precursor solution, a perovskite mesophase film layer with non-significant crystallinity can be obtained by drying it below the perovskite crystallization temperature (e.g., 0℃~70℃) and removing part of the first solvent. Further coating an additive dispersion containing the first additive onto the perovskite mesophase film layer (i.e., coating it at the upper interface) allows the first additive to cover the perovskite mesophase film layer. In the subsequent laser annealing process, the first additive can induce effective crystallization of the perovskite and regulate the energy level structure at the upper interface (corresponding to the first surface) of the perovskite layer, causing the perovskite material in the region near the first surface to exhibit the aforementioned energy level structure, achieving higher energy conversion efficiency. It is understood that this is not intended to be limited to the above theory.

[0491] Furthermore, the aforementioned energy level modulation method can exist stably for a long time, thereby improving the long-term operational reliability of optoelectronic devices.

[0492] Furthermore, by coating the additive dispersion, the first additive can be uniformly covered on the perovskite intermediate phase film layer. Thus, while inducing effective crystallization of the perovskite, the first additive can also provide a large-area uniform coverage of the perovskite layer formed after crystallization, achieving large-area and uniform interface energy level control, which can achieve high energy conversion efficiency on large-area devices. In addition, long-term effective interface energy level control can be achieved on large-area perovskite layers, further improving the long-term operational reliability of the device.

[0493] The perovskite mesophase film contains residual solvent, which can help the first additive to have a suitable depth of influence on the modulation of the interface energy level through assisted ion migration.

[0494] The above-mentioned preparation process has good versatility and can be applied to perovskite materials with different types and crystallographic properties; in addition, it has good process stability and can significantly improve the batch-to-batch consistency of high-efficiency devices.

[0495] Furthermore, given the large-area, uniform coverage of the perovskite layer formed after crystallization by the first additive, effective and uniform interfacial energy level control can be achieved, which can be manifested as a relatively uniform interfacial potential distribution at the first surface of the perovskite layer and a low Moran index of the interfacial potential distribution.

[0496] The preparation method described above can be used to control energy levels at the interface of perovskite layers with different types of perovskite materials and different crystallographic properties.

[0497] Furthermore, the preparation method described above can be used on large areas (e.g., ≥1m²). 2 Effective, uniform, and long-term effective interface energy level control can be achieved on large-area devices, thereby improving the energy conversion efficiency and device stability.

[0498] In some embodiments of this application, the target perovskite material includes divalent metal cations. Further, the concentration of the divalent metal cations in the perovskite precursor solution can be 0.5 mol / L to 3 mol / L, optionally 1 mol / L to 2 mol / L, or any of the following concentrations or a range selected from any two of the following concentrations: 0.5 mol / L, 0.6 mol / L, 0.8 mol / L, 0.9 mol / L, 1 mol / L, 1.2 mol / L, 1.4 mol / L, 1.5 mol / L, 1.6 mol / L, 1.8 mol / L, 2 mol / L, 2.2 mol / L, 2.4 mol / L, 2.5 mol / L, 3 mol / L, etc.

[0499] In some embodiments of this application, the solvent for the perovskite precursor solution may include one or more of dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and N-methylpyrrolidone (NMP).

[0500] In some embodiments of this application, the solvent for the perovskite precursor solution can be a mixture of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). In some embodiments, the volume ratio of DMF to DMSO is 2 to 6, and exemplary volume ratios can be 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, 6, etc., but are not limited thereto.

[0501] In some embodiments of this application, the second solvent includes one or more of chloroform, isopropanol, and ethanol.

[0502] In some embodiments of this application, in step S100, the stage temperature (T1) is 0℃~70℃, optionally 20℃~35℃, further optionally 20℃~30℃, and may also be any of the following temperatures or a range selected from any two of the following temperatures: 0℃, 2℃, 4℃, 5℃, 6℃, 8℃, 10℃, 15℃, 20℃, 25℃, 30℃, 35℃, 40℃, 45℃, 50℃, 55℃, 60℃, 65℃, 70℃, etc.

[0503] In some embodiments of this application, in step S100, the drying time for removing part of the first solvent is 1s to 100s, and can be selected as 10s to 60s.

[0504] In some embodiments of this application, in step S100, the drying process to remove part of the first solvent is carried out by air knife purging. Drying by air knife purging is more conducive to obtaining a perovskite intermediate phase film layer with no significant crystallinity and uniform in-plane structure, which is beneficial to improving the crystallization quality of perovskite.

[0505] In some embodiments of this application, in step S100, the air velocity for air knife purging can be 50 L / min to 250 L / min, optionally 100 L / min to 250 L / min, or any of the following speeds or a range selected from any two of the following speeds: 50 L / min, 60 L / min, 70 L / min, 80 L / min, 90 L / min, 100 L / min, 120 L / min, 140 L / min, 150 L / min, 160 L / min, 180 L / min, 200 L / min, 220 L / min, 240 L / min, 250 L / min, etc.

[0506] In some embodiments of this application, the method for fabricating the optoelectronic device satisfies one or more of the following features (any numerical parameter of the following features may also be selected from any suitable value or range in the context):

[0507] (c1) In the step of drying to remove part of the first solvent, the stage temperature is 20℃~35℃ and the drying time is 1s~100s, which can be selected as 10s~60s;

[0508] (c2) The first additive is the first additive in the optoelectronic device described in the first aspect of this application; the preparation method provided above can use a variety of first additive materials, all of which can achieve the aforementioned interface energy level regulation.

[0509] (c3) The concentration of the first additive in the additive dispersion is 1 mg / mL to 4 mg / mL, or it can be any of the following concentrations followed by a range of any two of the following concentrations: 1 mg / mL, 1.2 mg / mL, 1.4 mg / mL, 1.5 mg / mL, 1.6 mg / mL, 1.8 mg / mL, 2.0 mg / mL, 2.2 mg / mL, 2.4 mg / mL, 2.5 mg / mL, 2.6 mg / mL, 2.8 mg / mL, 3 mg / mL, 3.2 mg / mL, 3.4 mg / mL, 3.5 mg / mL, 3.6 mg / mL, 3.8 mg / mL, 4 mg / mL, etc.; in this case, it is beneficial to better control the overall shift range of the energy level structure.

[0510] (c4) Laser annealing adopts a gradient annealing method; in some embodiments, laser annealing includes performing a first stage annealing at a first temperature and then performing a second stage annealing at a second temperature; wherein the first temperature is lower than the second temperature; during the first stage annealing at a relatively low temperature, the perovskite can be induced to slowly pre-crystallize with a relatively high amount of solvent residue, and then the second stage annealing is performed at a relatively high temperature to induce the formation of high-quality perovskite crystals, which is beneficial to reduce defects and improve the energy conversion efficiency of the device;

[0511] (c5)A Δ B Δ and C Δ A satisfies the requirements of the optoelectronic device described in the first aspect of this application. Δ B Δ and C Δ Requirements.

[0512] In some embodiments of this application, in step S100, the drying time for removing part of the first solvent is 1s to 100s, optionally 10s to 60s, or any of the following durations, or a range selected from any two of the following: 1s, 2s, 4s, 5s, 6s, 8s, 10s, 12s, 14s, 15s, 16s, 18s, 20s, 25s, 30s, 35s, 40s, 45s, 50s, 55s, 60s, 80s, 100s, etc.

[0513] In some embodiments of this application, the first temperature is 85°C to 95°C, and the second temperature is 130°C to 140°C.

[0514] In some embodiments of this application, the laser power for the first stage annealing at the first temperature is 100W to 200W, and the laser power for the second stage annealing at the second temperature is 750W to 850W.

[0515] In some embodiments of this application, the duration of the first-stage annealing at the first temperature is shorter than the duration of the second-stage annealing at the second temperature.

[0516] In some embodiments of this application, the duration of the first-stage annealing at the first temperature is 1s to 5s, and the duration of the second-stage annealing at the second temperature is 8s to 15s.

[0517] In some embodiments of this application, laser annealing employs nanosecond-level pulsed lasers.

[0518] In some embodiments of this application, laser annealing uses blue laser light with a wavelength of 400nm to 500nm. The perovskite component and its intermediate phases have relatively high absorption rates for blue light, which is more conducive to controlling large-area uniform annealing.

[0519] In some embodiments of this application, laser annealing at a first temperature and laser annealing at a second temperature each employ an independent isothermal mode.

[0520] In some embodiments of this application, the photovoltaic device prepared is as described in the first aspect of this application.

[0521] In optoelectronic devices, structural layers other than the perovskite layer can be prepared using one or more of the following methods, including but not limited to: chemical bath deposition, electrochemical deposition, chemical vapor deposition, thermal evaporation, atomic layer deposition, magnetron sputtering, precursor liquid spin coating, precursor liquid slot coating, precursor liquid blade coating, and mechanical pressing. Appropriate methods can be selected to stack the structural layers with adjacent structural layers based on the material properties of each layer. In some embodiments of this application, structural layers in optoelectronic devices can be prepared using one or more of the following methods, including but not limited to: thermal evaporation, precursor liquid coating, etc., wherein the precursor liquid coating method can be precursor liquid spin coating, precursor liquid blade coating, precursor liquid spraying, etc.

[0522] In some embodiments of this application, the method for fabricating a photovoltaic device includes the following steps:

[0523] S10: Perform P1 etching on the first electrode: Perform P1 etching on the first electrode stacked on the substrate layer to form a P1 etching line, exposing the substrate layer to obtain the first substrate, which is then cleaned for later use. The first electrode can be a transparent electrode. The location of the formed P1 etching line can be found in [reference needed]. Figure 11 .

[0524] S20: A first charge transport layer is formed on the first electrode.

[0525] In some implementations, the first charge transport layer may be a hole transport layer.

[0526] S30: A perovskite layer is formed on the first charge transport layer. See the context for photovoltaic device fabrication methods.

[0527] S40: Form a second charge transport layer on the perovskite layer. Perform P2 etching to the depth of the first electrode near the hole transport layer surface. (See reference...) Figure 11 .

[0528] When the first charge transport layer is a hole transport layer, the second charge transport layer is an electron transport layer; when the first charge transport layer is an electron transport layer, the second charge transport layer is a hole transport layer.

[0529] S50: Form a second electrode on the second charge transport layer, perform P3 etching, and etch to the surface of the first electrode near the hole transport layer, then clean the edges. The location of the formed P3 etching line can be found in [reference needed]. Figure 11 .

[0530] In some embodiments of the third aspect of this application, an electrical device is provided, which includes at least one of the optoelectronic devices described in the first aspect of this application and optoelectronic devices prepared by the preparation method of the optoelectronic devices described in the second aspect of this application.

[0531] In some embodiments of the sixth aspect of this application, a power generation device is provided, which includes at least one of the optoelectronic devices described in the first aspect of this application and optoelectronic devices prepared by the preparation method of the optoelectronic devices described in the second aspect of this application.

[0532] Both the power-consuming devices and power-generating devices containing the aforementioned optoelectronic devices can leverage the advantages of optoelectronic devices.

[0533] In some embodiments, the aforementioned optoelectronic device can be a power generation device or power generation apparatus that functions as an electrical device. The type of power generation device or power generation apparatus may include, but is not limited to, integrated power generation. The location of the power generation device or power generation apparatus may include, but is not limited to, the roof or back panel of a vehicle.

[0534] Furthermore, the aforementioned electrical devices may include mobile devices, such as mobile phones and laptops, electric vehicles, electric trains, ships and satellites, power generation systems, etc., but are not limited to these.

[0535] Figure 12 This is an example of an electrical device. The electrical device 6 is a car, and can further be a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle, etc.

[0536] Another example of an electrical device could be a mobile phone, tablet, laptop, calculator, etc.

[0537] Another example of an electrical device could be a wearable device, such as a watch.

[0538] Non-limiting examples of light-emitting devices may include light-emitting diodes (LEDs), laser diodes (LDs), etc. Applications of power-generating devices may include, but are not limited to, lighting and display applications.

[0539] In some embodiments, the aforementioned optoelectronic devices or optoelectronic components can be used as light-emitting devices in a display device. Non-limiting examples of display devices include displays, photodetectors, etc.

[0540] The following describes some embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where the technology or conditions are not specified in the embodiments, they are performed according to the description above, or according to the technology or conditions described in the literature in the art, or according to the product instructions. Reagents or instruments whose manufacturers are not specified are all conventional products that can be obtained commercially, or can be synthesized from commercially available products using conventional methods.

[0541] In the following examples, unless otherwise specified, room temperature refers to 20°C to 30°C.

[0542] In the testing methods section, photovoltaic devices are used as an example of performance testing for optoelectronic devices. It can be understood that optoelectronic devices can be used to perform relevant tests on light-emitting devices.

[0543] For test results where specific test methods are not specified below, please refer to the description above.

[0544] The hole transport materials are: PTAA (poly(4-phenyl)(2,4,6-trimethylphenyl)amine); FAI (formamidine iodocarbamate, CAS No. 879643-71-7); MABr (methylamine bromide, CAS No. 6876-37-5); MACl (methylamine chloride, CAS No. 593-51-1); PCBM (methyl [6,6]-phenyl C61 butyrate); and BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, also known as copper bath).

[0545] I. Fabrication of optoelectronic devices (which can be used as photovoltaic devices and in solar cells)

[0546] Example 1. Fabrication of an inverted optoelectronic device.

[0547] Step S1: Take a set of fluorine-doped tin oxide substrates (FTO conductive glass, first electrode / glass substrate) with dimensions of 1m×2m, and use an infrared laser to etch P1. The width of P1 is about 25μm, dividing the entire glass into 161 sub-cells. The length of the sub-cells extends along the long side, and the series resistance of different sub-cells is greater than 10MΩ (i.e., 10×10). 6 The etched conductive glass surface was cleaned by ultrasonic cleaning with deionized water, acetone, ethanol, and isopropanol for 15 minutes each, and then placed in a 70°C drying oven for 120 minutes to remove residual organic impurities, resulting in a clean and dry substrate material. This substrate was then treated with UV-ozone for 15 minutes and transferred to a nitrogen-filled glove box. The thickness of the first electrode was 500 nm.

[0548] Step S2, preparation of the hole transport layer: PTAA is used as the hole transport material. PTAA is dissolved in toluene to form a 2 mg / mL solution. This solution is coated onto an FTO substrate and then annealed at 100°C for 10 min to obtain a thin and flat hole transport layer (approximately 20 nm thick). The hole transport layer is used to extract photogenerated holes and block electrons.

[0549] Step S3, Preparation of the perovskite layer:

[0550] Step S3-1: Dissolve PbI2, FAI, PbBr2, MABr, CsI, and MACl (MACl with a molar percentage of 20 mol% relative to Pb, used as an additive) in a mixed solvent of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a volume ratio of 5.5:1 (first solvent), according to CsI... 0.05 (FA 0.92 MA 0.08 ) 0.95 Pb(I 0.92 Br 0.08 A basic perovskite precursor solution of 1.4 mol / L was prepared by mixing the elements of the chemical formula (denoted as perovskite I) in a 1.4 mol / L ratio. The solution was stirred overnight in a glove box filled with nitrogen to obtain the perovskite precursor solution.

[0551] Step S3-2: Using a slit coating method, the perovskite precursor solution obtained in step S3-1 is filtered through a polytetrafluoroethylene (PTFE) filter. The filtered precursor solution is then coated onto the hole transport layer. A purge with an air knife is used to remove some of the first solvent (stage temperature 25°C, purge velocity 200 L / min, duration 30 s), leaving 14% of the first solvent remaining, thus obtaining a perovskite mesophase film (or perovskite precursor film). KCl (used as a first additive) is dissolved in chloroform at a concentration of 2 mg / mL to obtain an additive dispersion. This dispersion is then coated onto the perovskite mesophase film. After the chloroform evaporates, the resulting additive film has a thickness of approximately 7 nm.

[0552] Here, "first solvent residue" is based on the initial mass before the solvent is removed by air knife purging, using the aforementioned F... S The testing method was determined.

[0553] Step S3-3: The perovskite mesophase film layer with additive liquid film is subjected to laser gradient annealing based on nanosecond pulsed laser, using a 450nm blue laser with a power of 150W and a stage temperature of 90℃ (first temperature). The laser spot covers the entire surface (i.e., the laser spot covers an area of ​​at least 2m²). 2 The perovskite wet film is irradiated for 2 seconds (first stage annealing at the first temperature), and then the power is increased to 800W and held at 130℃ for 10 seconds (second stage annealing at the second temperature) to form a perovskite thin film (i.e., perovskite layer) with a thickness of about 440nm.

[0554] Step S4, Preparation of the electron transport layer: Fullerene C 60 A fullerene solution was prepared by dissolving it in chlorobenzene at a concentration of 15 mg / mL. A wet film of a certain thickness was deposited using a slit-coating method to obtain an electron transport layer with the desired thickness of 30 nm.

[0555] Step S5, preparation of the interface layer (insertion layer): Dissolve BCP in methanol to form a 0.5 mg / mL solution, coat it on the electron transport layer, and then anneal it on a heating stage at 70°C for 10 minutes to form an interface layer (here, a hole blocking layer) with a thickness of about 5 nm.

[0556] Laser etching is used to etch P2, which has a width of 60 μm and a depth to the upper interface of the FTO layer. The spacing between P2 and P1 is 100 μm.

[0557] Step S6, fabrication of the back electrode (second electrode): Using a vacuum thermal evaporation deposition apparatus, a 100 nm thick copper electrode is deposited on the interface layer prepared in step S5 at a rate of 0.5~2 Å / s (approximately 1 Å / s in this example); P3 is laser etched, with a width of 50 μm and a depth reaching the upper interface of the FTO layer. The interval between P3 and P2 is 80 μm, and the positions of the etching lines are P1 / P2 / P3 in sequence (see reference). Figure 11 Then, infrared edge cleaning is used. The optoelectronic device is then fabricated.

[0558] The prepared optoelectronic devices can be used as photovoltaic devices for device performance testing.

[0559] Examples 2-13 were prepared using essentially the same method as in Example 1 to fabricate optoelectronic devices including a perovskite layer. The difference lies in step S3, and the type, concentration, and one or more of the laser annealing parameters of the first additive in the additive dispersion are different, as shown in Table 1. The remaining operating steps are the same as in Example 1.

[0560] Example 14 describes the fabrication of an optoelectronic device comprising a perovskite layer using essentially the same method as in Example 1, except that step S3-1 is different and the target perovskite material corresponding to the perovskite precursor solution is different. See Table 1 for details. The remaining operational steps are the same as in Example 1.

[0561] S3-1: Dissolve PbI₂, FAI, PbBr₂, MABr, and CsI in a mixed solvent of DMF and DMSO at a volume ratio of 5.5:1 (first solvent), and then proceed according to Cs... 0.05 FA 0.95 Pb(I 0.95 Br 0.05 A basic perovskite precursor solution of 1.4 mol / L was prepared by mixing the elements of the chemical formula (denoted as perovskite II) in a 1.4 mol / L ratio. The solution was stirred overnight in a glove box filled with nitrogen to obtain the perovskite precursor solution.

[0562] Example 15. Fabrication of a formally structured optoelectronic device.

[0563] The following steps are used to prepare a solar cell.

[0564] Step S1, Preparation of the transparent electrode (first electrode): Select fluorine-doped tin oxide with dimensions of 1m × 2m. (FTO) The substrate (FTO conductive glass electrode, first electrode / glass substrate) is etched with an infrared laser, and P1 is approximately 25 μm wide. The entire glass is then divided into 161 sub-cells, with the series resistance of the different sub-cells exceeding 10 MΩ (i.e., 10 × 10⁻⁶). 6The etched FTO substrate surface was cleaned by ultrasonic cleaning with deionized water, acetone, ethanol, and isopropanol for 15 minutes each, and then placed in a 70°C drying oven for 120 minutes to remove residual organic impurities, resulting in a clean and dry substrate material. This substrate was then treated with UV-ozone for 15 minutes and transferred to a nitrogen-filled glove box. The thickness of the first electrode is approximately 550 nm.

[0565] Step S2, preparation of the electron transport layer: A tin oxide nanoparticle aqueous dispersion (the volume ratio of tin oxide nanoparticles to water is 1:9.5, and the average particle size of tin oxide nanoparticles is about 2 nm) is spin-coated onto the FTO conductive layer at a speed of 3000 rpm for 30 s; then, it is transferred to a hot plate and annealed at a temperature of 150 °C for 30 min, followed by ultraviolet ozone treatment at a wavelength of 185 nm, a power of 2250 W, and an irradiation time of 20 min to obtain an electron transport layer with a thickness of about 20 nm.

[0566] Step S3-1: Dissolve PbI2, FAI, PbBr2, MABr, CsI, and MACl (MACl with a molar percentage of 20 mol% relative to Pb, used as an additive) in a mixed solvent of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a volume ratio of 5.5:1 (first solvent), according to CsI... 0.05 (FA 0.92 MA 0.08 ) 0.95 Pb(I 0.92 Br 0.08 The elements in the chemical formula were mixed to prepare a basic solution of perovskite precursor with a molar ratio of 1.4 mol / L. The solution was stirred overnight in a glove box filled with nitrogen to obtain the perovskite precursor solution.

[0567] Step S3-2: Using a slit coating method, the perovskite precursor solution obtained in step S3-1 is filtered through a polytetrafluoroethylene (PTFE) filter. The filtered perovskite precursor solution is then coated onto the hole transport layer. A purge with an air knife is used to remove some of the first solvent (stage temperature 25°C, purge velocity 200 L / min, duration 50 s), resulting in a perovskite mesophase film. KI (used as the first additive) is dissolved in chloroform at a concentration of 2 mg / mL to obtain an additive dispersion. This dispersion is then coated onto the perovskite mesophase film. After the chloroform evaporates, the resulting additive film has a thickness of approximately 7 nm.

[0568] In step S3-3, the perovskite mesophase film layer with additive liquid film is subjected to laser gradient annealing. Based on nanosecond pulsed laser, a 450nm blue laser is used with a power of 150W (first power) and a stage temperature of 90℃ (first temperature). The laser spot covers the entire surface and irradiates the perovskite wet film for 2s. Then the power is increased to 800W and held at 100℃ (second temperature) for 10s to form a perovskite thin film (i.e., perovskite layer) with a thickness of about 440nm.

[0569] Step S4, preparation of the hole transport layer: 1.811 mmol of lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) was dissolved in 1 mL of acetonitrile to obtain the first raw material solution; 72.3 mg of 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene was dissolved in 1 mL of chlorobenzene, and then mixed with 17.5 μL of the first raw material solution and 28.8 μL of 4-tert-butylpyridine (tBP) to obtain the doped raw material solution; the doped raw material solution was spin-coated onto the perovskite light-absorbing layer at a speed of 3000 rpm for 30 s to obtain the hole transport layer with a thickness of 150 nm.

[0570] Laser etching is used to etch P2, which has a width of 60 μm and a depth to the upper interface of the FTO layer. The spacing between P2 and P1 is 100 μm.

[0571] Step S5, fabrication of the back electrode (second electrode): A 100 nm thick gold (Au) electrode is deposited on the interface layer obtained in step S5 using a vacuum thermal evaporation coating apparatus; P3 is laser etched, with a width of 50 μm and a depth reaching the upper interface of the FTO layer. The spacing between P3 and P2 is 80 μm, and the etching lines are positioned sequentially as P1 / P2 / P3 (see reference). Figure 11 Then, infrared edge cleaning is used. The optoelectronic device is then fabricated.

[0572] Examples 16-19 prepared optoelectronic devices including a perovskite layer using essentially the same method as in Example 15, except that step S3 was different, and one or two of the types and concentrations of the first additive in the additive dispersion were different, as shown in Table 1. The remaining operating steps were the same as in Example 15.

[0573] Example 20 uses essentially the same method as Example 15 to prepare an optoelectronic device including a perovskite layer, the difference being that the perovskite annealing and drying conditions in step S3 are different, as shown in Table 1. The remaining operation steps are the same as in Example 15.

[0574] Comparative Example 1 used essentially the same method as Example 1 to prepare an optoelectronic device including a perovskite layer, except that step S3 was different, omitting the preparation step of the coating additive dispersion. The remaining operation steps were the same as in Example 1, and can also be found in Table 1.

[0575] Step S3-1 is the same as in Example 1.

[0576] Step S3-2: Filter the solution obtained in step S3-1 using a polytetrafluoroethylene filter. Coat the filtered perovskite precursor solution onto the hole transport layer and remove some of the solvent using an air knife (stage temperature, air knife purging speed, and duration are the same as in Example 1) to obtain the perovskite intermediate phase film layer. The step of coating the additive dispersion is omitted.

[0577] Step S3-3: Transfer the perovskite intermediate phase film to a heating stage and anneal at 110°C for 7 minutes to obtain a crystallized perovskite layer with a thickness of approximately 440 nm.

[0578] Comparative Example 2. An optoelectronic device comprising a perovskite layer was prepared using essentially the same method as in Example 1, except that the method for preparing the perovskite layer was different; the first additive was directly added to the perovskite precursor solution, as shown below. The remaining operating steps were the same as in Example 1, and can also be found in Table 1.

[0579] S3 uses the following method to prepare the perovskite layer:

[0580] S3-1: Dissolve PbI₂, FAI, PbBr₂, MABr, CsI, and MACl (MACl is used as an additive with a molar percentage of 20 mol% relative to Pb) in a mixed solvent of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) at a volume ratio of 5.5:1 (first solvent), and proceed according to CsI. 0.05 (FA 0.92 MA 0.08 ) 0.95 Pb(I 0.92 Br 0.08 A basic perovskite precursor solution was prepared by mixing the elements in the chemical formula with a molar ratio of 1.4 mol / L. Then, KCl was added to the basic solution at a concentration of 2 mg / mL. The solution was then stirred overnight in a glove box filled with nitrogen to obtain the perovskite precursor solution.

[0581] Step S3-2: Using the slit coating method, the perovskite precursor liquid obtained in step S3-1 is filtered with a polytetrafluoroethylene filter head. The filtered precursor liquid is then coated onto the hole transport layer, and a gas knife is used to purge to remove part of the first solvent (the stage temperature, gas knife purging speed, and duration are the same as in Example 1) to obtain the perovskite intermediate phase film layer.

[0582] Step S3-3: The perovskite mesophase film layer is subjected to laser gradient annealing. Based on nanosecond pulsed laser, a 450nm blue laser with a power of 150W is used. The stage temperature is 90℃. The laser spot (the laser spot area is the same as in Example 1) is used to irradiate the entire perovskite wet film for 2s. Then the power is increased to 800W and the film is kept at 120℃ for 10s to form a perovskite thin film with a thickness of about 440nm.

[0583] Comparative Example 3. An optoelectronic device comprising a perovskite layer was prepared using essentially the same method as in Example 1, except that the step of coating the additive dispersion was performed after the formation of the perovskite layer. The remaining operational steps were the same as in Example 1, and can also be found in Table 1.

[0584] S3 uses the following method to prepare the perovskite layer:

[0585] Step S3-1: The perovskite precursor solution is prepared using the same method as in Example 1.

[0586] Step S3-2: Using the slit coating method, the perovskite precursor liquid obtained in step S3-1 is filtered with a polytetrafluoroethylene filter head. The filtered precursor liquid is then coated onto the hole transport layer, and a gas knife is used to purge to remove part of the first solvent (the stage temperature, gas knife purging speed, and duration are the same as in Example 1) to obtain the perovskite intermediate phase film layer.

[0587] Step S3-3: Transfer the perovskite intermediate phase film to a heating stage and anneal at 110°C for 7 minutes to obtain a crystallized perovskite layer with a thickness of approximately 440 nm.

[0588] Step S3-4: Dissolve KCl in chloroform at a concentration of 2 mg / mL to obtain an additive dispersion. Then, coat the additive dispersion onto a perovskite film. The chloroform evaporates quickly to obtain a KCl film.

[0589] Comparative Example 4 used essentially the same method as Example 14 to prepare an optoelectronic device including a perovskite layer, except that step S3 was different; the preparation step of the coating additive dispersion was omitted and replaced with hot-stage annealing. The remaining operation steps were the same as in Example 14, and can also be found in Table 1.

[0590] Step S3-1 is the same as in Example 14.

[0591] Step S3-2: Filter the solution obtained in step S3-1 using a polytetrafluoroethylene filter. Coat the filtered perovskite precursor solution onto the hole transport layer and remove some of the solvent using an air knife (stage temperature, air knife purging speed, and duration are the same as in Example 14) to obtain the perovskite intermediate phase film layer. The step of coating the additive dispersion is omitted.

[0592] Step S3-3: Transfer the perovskite intermediate phase film to a heating stage and anneal at 110°C for 7 minutes to obtain a fully crystallized perovskite layer.

[0593] Comparative Example 5. A photoelectric device including a perovskite layer was prepared using essentially the same method as in Example 15, except that step S3 was different, and the preparation step of the coating additive dispersion was omitted. The remaining operation steps were the same as in Example 15, and can also be found in Table 1.

[0594] Step S3-1 is the same as in Example 1.

[0595] Step S3-2: Filter the solution obtained in step S3-1 using a polytetrafluoroethylene filter. Coat the filtered perovskite precursor solution onto the hole transport layer and remove some of the solvent using an air knife (stage temperature, air knife purging speed, and duration are the same as in Example 15) to obtain the perovskite intermediate phase film layer. The step of coating the additive dispersion is omitted.

[0596] Step S3-3: Transfer the perovskite intermediate phase film to a heating stage and anneal at 110°C for 7 minutes to obtain a crystallized perovskite layer with a thickness of approximately 440 nm.

[0597] II. Testing Methods

[0598] (a) Testing of materials, membrane samples, and samples obtained from disassembly, etc.

[0599] 1. Energy level structure analysis of perovskite layers (UPS combined with XPS)

[0600] Instrument: Thermo Fisher Scientific ESCALAB QXi.

[0601] The test method is as follows (incident angle is 2°):

[0602] (i) First, the 450 nm perovskite layer film is etched using an Ar+ ion beam. Then, the signal of a selected element (such as Pb) in the perovskite crystal phase of the perovskite layer is detected. 4f (Related signals) to determine the etching location, pending Pb 4f When the signal intensity drops to 1 / e of the plateau intensity, the perovskite etching is defined as complete. The etching rate of the perovskite layer by the ion beam is calculated to determine the etching time for subsequent measurements to obtain data of the target area. Among them, the signal of the selected element in the perovskite crystal phase has a high concentration in the perovskite layer, which can easily form a region with the elements of the possible adjacent structural layers, thereby determining the boundary between the perovskite layer and the possible adjacent structural layers.

[0603] (ii) Identify the sample to be tested, first perform an absorption spectrum scan, then perform UPS full spectrum and E... cutoffEv scanning was performed to obtain the corresponding CBM, EF, and VBM positions; then etching was performed to expose the second region at the center of the thickness, followed by an absorption spectral scan, and then UPS full spectrum and Ev scanning were performed. cutoff Energy level structures of the perovskite bulk phase were obtained by Ev scanning.

[0604] Taking Example 1 as an example, the full spectrum of UPS and E at distances of 0 nm, 220 nm and 50 nm from the upper interface (first surface) were respectively measured. cutoff The test results of Ev scanning are used as energy level structure information for the first, second, and third regions.

[0605] 2. XRD analysis of the crystallization of the perovskite mesophase film.

[0606] Test instrument: Bruker D8 Advance.

[0607] XRD test parameters: The X-ray source was Cu Kα1 (wavelength 1.54056 Å), the scanning range (2θ) was 0~80°, the scanning rate was 10° / min, and the incident angle (2θ) ranged from 2° to 90°. The X-ray tube was set to TWIST-TUBE, and the detector was EIGER2.

[0608] The X-ray diffractometer is started to begin measurements. X-rays pass through the sample, interact with the crystal, and produce diffracted light, which is then received and recorded by the detector to obtain the XRD data of the perovskite layer. First, background is subtracted by linear or polynomial fitting, and then the target peaks are marked with their ranges.

[0609] (II) Measurement of electric potential distribution and analysis of its uniformity

[0610] 1. KPFM (Kelvin Probe Force Microscopy) test

[0611] KPFM testing instrument: Bruker FastScan Bio.

[0612] KPFM test analysis: By measuring the change in electrostatic force between the probe and the sample, when the probe approaches the surface to be tested, due to the difference in their work functions, electrons will flow from the high Fermi level to the low Fermi level until the Fermi level is flattened. The contact potential difference can be deduced from the work function difference in this process, thereby obtaining potential data. By further combining in-plane scanning, the potential distribution data of the surface to be tested can be obtained.

[0613] 2. Moran's index analysis of potential distribution

[0614] Using potential data as the parameters to be analyzed, the following parameters are processed in the following manner:

[0615] 1. Parameters to be analyzed at different locations: Obtain the values ​​of the parameters to be analyzed at different locations within the region to be analyzed.

[0616] 2. Calculate the Moran index (I) using the selected statistical formula:

[0617]

[0618] Where n is the number of data points; W is the sum of all weights; ij x is an element in the spatial weight matrix; i and x j These are the parameter values ​​for the i-th and j-th positions; This is the average value of all position parameter values.

[0619] 3. Setting the spatial weight matrix:

[0620] The spatial weight matrix uses inverse distance weights, i.e. ,in The distance between the i-th and j-th positions is... Here is the distance attenuation parameter, and p is 2.

[0621] 4. Statistical area and sampling interval of data points: The statistical area is 10 μm × 10 μm, and the sampling interval of data points is 50 nm.

[0622] (III) Device Performance Testing

[0623] 1. Initial performance of the device (optoelectronic devices used in solar cells)

[0624] Under normal temperature and pressure (25℃, 1 atmosphere), a standard light source with AM1.5G was used to simulate sunlight, conforming to the national standard IEC61215. The light intensity was corrected using crystalline silicon solar cells to achieve the intensity of one solar cell. The current-voltage characteristic curve (i.e., current-voltage curve) of the solar cell under the illumination of the light source was measured using a four-channel digital source meter (Keithley 2440). The open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and photoelectric conversion efficiency (PCE) of the solar cell were obtained.

[0625] The photoelectric conversion efficiency (PCE) is calculated as follows:

[0626] PCE = Pout / Pin

[0627] = Voc×Jsc×[(Vmpp×Jmpp) / (Voc×Jsc)] / Pin

[0628] = Voc×Jsc×FF / Pin

[0629] Wherein, Pout, Pin, Voc, Jsc, Vmpp, Jmpp, and FF represent the battery's operating output power, incident light power, open-circuit voltage, short-circuit current, maximum power point voltage, maximum power point current, and fill factor, respectively. The incident light power is 100 mW / cm². 2 .

[0630] 2. Device stability determination (aging test)

[0631] After the initial performance test of the device is completed, the cell under test is placed in an atmospheric environment (relative humidity of 65%-85%, ambient temperature of about 15℃-40℃) and left in the dark for 1000 hours. The energy conversion efficiency is then tested again (each test continues until there is no hysteresis in the forward and reverse scans, and the photoelectric conversion efficiency is recorded). The ratio of the photoelectric conversion efficiency after 1000 hours of atmospheric placement to the initial efficiency is calculated and used as the normalized efficiency of the solar cell after 1000 hours of placement, which can be denoted as "1000h retention rate".

[0632] 1000h retention rate = retest efficiency / initial efficiency × 100%. The higher the initial normalized efficiency, the better the device stability.

[0633] III. Test Result Analysis

[0634] Taking Example 1 as an example, according to the XRD test results of the perovskite mesophase film, no obvious characteristic diffraction peaks of the perovskite crystal phase were observed, which can be considered that the perovskite mesophase film obtained before coating the additive dispersion has no significant crystallinity. However, after annealing, sharp characteristic diffraction peaks of the perovskite crystal phase were observed in the XRD pattern of the formed perovskite layer, among which strong diffraction peaks of the perovskite crystal phase appeared near 13°~15° (2θ).

[0635] In each of Examples 1-14, A Δ B Δ C Δ All values ​​are greater than 0, and at least one of them must be ≥0.08 eV. See Table 2 for details.

[0636] In each of Examples 1-14, the upward shift of the CBM, Fermi level, and VBM in the first region relative to the second region is relatively similar, resulting in an overall upward shift of the energy level structure and a small change in the band gap. See Table 2 for details.

[0637] In each of Examples 15-20, A Δ B Δ C Δ All values ​​are less than 0, and at least one of them is ≤ -0.08 eV. See Table 2 for details.

[0638] In each of Examples 15-20, the downward shift of the CBM, Fermi level, and VBM in the first region relative to the second region is relatively similar, resulting in an overall downward shift of the energy level structure and a small change in the band gap. See Table 2 for details.

[0639] In each of Examples 1-14 and 15-20, the perovskite layer satisfies at least two of the following three characteristics (see Table 2):

[0640] (t1)A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV;

[0641] (t2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV;

[0642] (t3) The absolute value of the band gap difference between the perovskite material in the first region and the perovskite material in the second region is less than or equal to 0.02 eV.

[0643] The optoelectronic devices prepared in Examples 1-13 all exhibit higher photoelectric conversion efficiency than those in Comparative Example 1; furthermore, they also demonstrate higher device stability. See Table 3. The optoelectronic device prepared in Example 14 exhibits higher photoelectric conversion efficiency than that in Comparative Example 4; furthermore, it also demonstrates higher device stability. See Table 3.

[0644] The optoelectronic devices prepared in Examples 15-20 all exhibit higher photoelectric conversion efficiency compared to Comparative Example 5; furthermore, they also demonstrate higher device stability. See Table 3 for details.

[0645] In embodiments 1-14 and 15-20, the band gaps of the first and second regions are similar, both approximately 1.6 eV, and the absolute value of the difference between the band gaps of the first and second regions satisfies: ≤0.02 eV. See Table 2 for details.

[0646] Taking Example 1 as an example, the region extending 5nm~10nm along the Z direction towards the first surface at a distance of 30nm from the first surface is denoted as the third region. The Fermi level difference (B) between the perovskite material in the third region and the perovskite material in the second region is defined as follows: 32 ) satisfies 0.1eV≤B 32 <0.30eV.

[0647] In the optoelectronic devices of embodiments 1-14 and 15-20, the Moran's index of the potential distribution in the first region is relatively small, indicating that uniform control over a large area has been achieved. See Table 3 for details.

[0648] Comparative Example 1 omits the step of coating the additive dispersion compared to Example 1, that is, the first additive is not introduced. ΔB Δ C Δ All values ​​are 0. The photoelectric conversion efficiency of Comparative Example 1 is significantly lower than that of Example 1. In addition, the device stability is also significantly worse than that of Example 1. See Tables 2-3.

[0649] Comparative Example 2, where the first additive was directly added to the perovskite precursor solution, showed no significant improvement in energy conversion efficiency compared to Comparative Example 1, and the improvement in device stability was relatively small. See Table 2-3 for details.

[0650] In Comparative Example 3, the XRD pattern of the perovskite film formed in step S3-3 shows obvious diffraction peaks of the perovskite crystal phase, indicating significant crystallinity. Comparative Example 3 places the additive dispersion coating step after the formation of the perovskite film, i.e., coating the additive dispersion onto the highly crystalline perovskite film. Compared to Comparative Example 1, Comparative Example 3 shows no significant improvement in energy conversion efficiency, and the improvement in device stability is lower than that in Example 1. See Tables 2-3 for details.

[0651] Comparative Example 4 omits the step of coating the additive dispersion compared to Example 14, that is, the first additive is not introduced. Δ B Δ C Δ All values ​​are 0. The photoelectric conversion efficiency of Comparative Example 4 is significantly lower than that of Example 14. In addition, the device stability is also significantly worse than that of Example 14. See Tables 2-3.

[0652] Comparative Example 5 omits the step of coating the additive dispersion compared to Example 15, that is, the first additive is not introduced. Δ B Δ C Δ All values ​​are 0. The photoelectric conversion efficiency of Comparative Example 5 is significantly lower than that of Example 15. In addition, the device stability is also significantly worse than that of Example 15. See Tables 2-3.

[0653] Table 1.

[0654]

[0655] In Table 1, perovskite I is Cs 0.05 (FA 0.92 MA 0.08 ) 0.95 Pb(I 0.92 Br 0.08 3. Perovskite II is Cs 0.05 FA 0.95 Pb(I 0.95 Br 0.05 3.

[0656] Table 2.

[0657]

[0658] In Table 2, the first surface is close to the electron transport layer, and the second region corresponds to the bulk phase of the perovskite layer (the thickness center of the perovskite layer is selected).

[0659] In Table 2, the absolute value of the bandgap difference between the first region and the second region is numerically equal to C. Δ -A Δ The absolute value of.

[0660] Table 3.

[0661]

[0662] It is understood that the above embodiments and examples are merely illustrative. Those skilled in the art may also use other preparation methods to obtain the optoelectronic device of the first aspect of this application. For example, the first additive may not be added, but other process parameters may be adjusted to obtain the optoelectronic device described in the first aspect of this application. This application does not limit the preparation method of the optoelectronic device described in the first aspect.

[0663] The descriptions of the various implementation methods and embodiments above tend to emphasize the differences between them. Similarities or resemblances can be referenced interchangeably, and for the sake of brevity, they will not be repeated here. The technical features of the implementation methods and embodiments described above can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments have been described. However, as long as the combinations of these technical features do not contradict each other, they should be considered within the scope of this specification.

[0664] It should be noted that this application is not limited to the above-described embodiments and examples. The above-described embodiments and examples are merely examples, and any embodiments and examples that have the same structure and achieve the same effect as the technical concept within the scope of this application are included in the technical scope of this application. The embodiments and examples described above only illustrate several embodiments and examples of this application, and although the descriptions are relatively detailed, they should not be construed as limiting the scope of the patent. Furthermore, various modifications that can be conceived by those skilled in the art to the embodiments or examples, and other ways of constructing embodiments or examples by combining some of the constituent elements of the embodiments or examples, are also included in the scope of this application without departing from the spirit of this application.

Claims

1. An optoelectronic device, characterized in that, Includes a perovskite layer, the perovskite layer comprising a first perovskite material; the perovskite layer has a first surface and a second surface that are opposite to each other in the thickness direction of the perovskite layer; the thickness direction of the perovskite layer is denoted as the Z direction; There is a first region with a thickness of 5nm to 10nm extending 20nm from the first surface along the Z direction toward the interior of the perovskite layer; there is a second region with a thickness of 5nm to 10nm extending 10nm from the center of the thickness of the perovskite layer toward the first surface and the second surface, respectively; the first region is located between the first surface and the second region. Let A denote the energy difference between the valence band peaks of the first perovskite material in the first region and those in the second region. Δ Let B be the energy level difference between the Fermi level of the first perovskite material in the first region and that of the first perovskite material in the second region. Δ Let C be the energy level difference between the conduction band bottom of the first perovskite material in the first region and that in the second region. Δ ; The perovskite layer satisfies at least two of the following three characteristics: (t1)A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t3) The absolute value of the band gap difference between the first perovskite material in the first region and the first perovskite material in the second region is less than or equal to 0.02 eV; When the first surface is used for electron transport, A Δ B Δ and C Δ Each is independently greater than 0 eV, and A Δ B Δ and C Δ At least one of them is greater than or equal to 0.08 eV; or, When the first surface is used to transmit holes, A Δ B Δ and C Δ Each is independently less than 0 eV, and A Δ B Δ and C Δ At least one of them is less than or equal to -0.08 eV.

2. The optoelectronic device according to claim 1, characterized in that, The perovskite layer satisfies at least one of the following three characteristics: (a1)A Δ and B Δ The absolute value of the difference is less than or equal to 0.03 eV; (a2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.03 eV; (a3)A Δ and C Δ The absolute value of the difference is less than or equal to 0.03 eV.

3. The optoelectronic device according to any one of claims 1 or 2, characterized in that, When the first surface is used for electron transport, A Δ B Δ and C Δ One, two, or three of them are 0.08 eV to 0.35 eV; Optionally, A Δ B Δ and C Δ One, two, or three of them are 0.14eV to 0.30eV.

4. The optoelectronic device according to any one of claims 1 or 2, characterized in that, When the first surface is used to transmit holes, A Δ B Δ and C Δ One, two, or three of them are between -0.35 eV and -0.08 eV; Optionally, A Δ B Δ and C Δ One, two, or three of them are between -0.30 eV and -0.14 eV.

5. The optoelectronic device according to any one of claims 1 to 4, characterized in that, The optoelectronic device satisfies one or more of the following characteristics: (z1) The band gap of the first perovskite material in the second region is 1.2 eV to 2.2 eV, and can be selected as 1.2 eV to 2.0 eV; (z2) The Fermi level of the first perovskite material in the second region is -3.0eV to -5.5eV, and can be selected as -3.7eV to -5.0eV, based on the vacuum level.

6. The optoelectronic device according to any one of claims 1 to 5, characterized in that, The region extending 5nm to 10nm from the first surface within the perovskite layer at a distance L3 from the first surface along the Z direction is designated as the third region, where L3 ≥ 30nm; the third region is located between the first region and the second region. The difference in Fermi level between the first perovskite material in the third region and the first perovskite material in the second region is denoted as B. 32 , Wherein, when the first surface is used for electron transport, 0.1 eV ≤ B 32 <0.30eV; or, When the first surface is used for hole transport, -0.30 eV 32 ≤-0.10eV;​ Optionally, L3 is a value selected from 30nm to 100nm.

7. The optoelectronic device according to any one of claims 1 to 6, characterized in that, The thickness of the perovskite layer is 200nm~1500nm, and can be selected as 400nm~1000nm.

8. The optoelectronic device according to any one of claims 1 to 7, characterized in that, The perovskite layer further includes a first additive, which is located in a region of the perovskite layer near the first surface; the first additive is an inorganic material. Optionally, the first additive includes one or more of alkali metal halides, metal oxides, sulfides, metal nitrides, germanates, and carbonates; Further optionally, the alkali metal element in the metal halide includes one or more of Li, Na, K, and Cs; the halogen in the metal halide includes one or more of F, Cl, Br, and I; the metal oxide includes one or more of Al2O3, V2O5, Ta2O5, SrTiO3, Co3O4, and Fe2O3; the sulfide includes one or more of MoS2, WS2, SnS2, and CS2; the metal nitride includes aluminum nitride; the germanate includes Zn2GeO4; and the carbonate includes Li2CO3.

9. The optoelectronic device according to any one of claims 1 to 8, characterized in that, The perovskite layer satisfies any one of the following characteristics: (i) The first additive includes at least one of Cl and Br elements; Optionally, the second surface is used for light incident, and the first surface is used for electron transport; (ii) The first additive includes at least one of the elements I; Optionally, the second surface is used for light incident, and the first surface is used for transmitting holes.

10. The optoelectronic device according to any one of claims 1 to 9, characterized in that, The Moran index of the potential distribution of the first surface is less than or equal to 0.35, and optionally less than or equal to 0.20; wherein the potential of the first surface is obtained by measuring the potential of the first surface using a Kelvin atomic force microscope.

11. The optoelectronic device according to any one of claims 1 to 10, characterized in that, On a projection plane perpendicular to the Z-direction, the area of ​​the perovskite layer is greater than or equal to 0.09 cm². 2 Optionally, greater than or equal to 1m 2 .

12. The optoelectronic device according to any one of claims 1 to 11, characterized in that, The optoelectronic devices include photovoltaic devices or light-emitting devices.

13. The optoelectronic device according to claim 12, characterized in that, The optoelectronic device includes a photovoltaic device, and the second surface is the light-incident side.

14. The optoelectronic device according to claim 12 or 13, characterized in that, The optoelectronic device includes a photovoltaic device; the photovoltaic device includes a solar cell, and the solar cell includes the perovskite layer.

15. The optoelectronic device according to any one of claims 12 to 14, characterized in that, The optoelectronic device includes a solar cell, which is a multi-junction solar cell. The multi-junction solar cell includes a first cell unit, which includes the perovskite layer.

16. The optoelectronic device according to claim 15, characterized in that, The multijunction solar cell further includes a second cell stacked with the first cell; the second cell and the first cell are connected by an interconnect layer, or the second cell and the first cell are isolated by an insulating layer; the second cell includes a second light-absorbing layer, and the band gap of the second light-absorbing layer is different from that of the perovskite layer.

17. The optoelectronic device according to claim 16, characterized in that, The second light-absorbing layer in the second battery cell includes a semiconductor active material, which includes one or more of the following: a second perovskite material, a silicon-containing semiconductor material, copper zinc tin sulfide, copper zinc tin selenide, copper zinc tin selenide sulfide, copper indium gallium selenide, copper indium gallium diselenide, copper indium selenide, cadmium telluride, gallium arsenide, and organic active materials.

18. The optoelectronic device according to claim 16 or 17, characterized in that, The multi-junction solar cell includes a first electrode, a perovskite layer, an interconnect layer, a second light-absorbing layer, and a second electrode stacked together; wherein the interconnect layer is located between the perovskite layer and the second light-absorbing layer; the first electrode is located on the side of the perovskite layer opposite to the interconnect layer, and the second electrode is located on the side of the second light-absorbing layer opposite to the interconnect layer; or, The multi-junction solar cell includes a first electrode, a perovskite layer, a third electrode, an insulating layer, a fourth electrode, a second light-absorbing layer, and a second electrode stacked together; wherein the third electrode, the insulating layer, and the fourth electrode are stacked between the perovskite layer and the second light-absorbing layer, the third electrode is disposed on the side of the insulating layer facing the perovskite layer, the fourth electrode is disposed on the side of the insulating layer facing the second light-absorbing layer, the first electrode is located on the side of the perovskite layer away from the third electrode, and the second electrode is located on the side of the second light-absorbing layer away from the fourth electrode.

19. The optoelectronic device according to any one of claims 1 to 18, characterized in that, The optoelectronic device includes a photovoltaic device; the optoelectronic device satisfies one or more of the following characteristics: (b1) The perovskite layer is contained in the inverse or formal structure of the optoelectronic device; (b2) The optoelectronic device includes a first charge transport layer and a second charge transport layer, the perovskite layer being between the first charge transport layer and the second charge transport layer, the first surface facing the first charge transport layer, and the second surface facing the second charge transport layer; wherein, one of the first charge transport layer and the second charge transport layer is a hole transport layer and the other is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface; (b3) The optoelectronic device includes a first electrode and a second electrode, the perovskite layer is disposed between the first electrode and the second electrode, the first surface faces the first electrode, and the second surface faces the second electrode; Optionally, the optoelectronic device includes a charge transport layer and the perovskite layer disposed between the first electrode and the second electrode; the charge transport layer includes at least one of a first charge transport layer located between the first electrode and the perovskite layer and a second charge transport layer located between the second electrode and the perovskite layer; wherein, one of the first charge transport layer and the second charge transport layer is a hole transport layer and the other is an electron transport layer, and the type of charge transported by the first charge transport layer is the same as the type of charge transported by the first surface.

20. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: A perovskite precursor liquid containing a first perovskite material and a first solvent is coated and dried on a stage at 0°C~70°C to remove part of the first solvent, thus preparing a perovskite intermediate phase film layer. An additive dispersion is coated onto the surface of the perovskite mesophase film layer and laser annealed to form a perovskite layer; wherein the additive dispersion includes a first additive and a second solvent, and the first additive is an inorganic material. The formed perovskite layer includes a first perovskite material; the perovskite layer has a first surface and a second surface that are opposite to each other in the thickness direction of the perovskite layer, the first surface corresponding to the surface on which the additive dispersion is coated; the thickness direction of the perovskite layer is denoted as the Z direction; a first region with a thickness of 5nm~10nm exists within a range extending 20nm from the first surface along the Z direction toward the interior of the perovskite layer, and a second region with a thickness of 5nm~10nm exists within a range extending 10nm from the center of the thickness of the perovskite layer toward the first surface and the second surface, respectively; the first region is located between the first surface and the second region; the energy difference between the valence band top of the first perovskite material in the first region and the first perovskite material in the second region is denoted as A. Δ Let B be the energy level difference between the Fermi level of the first perovskite material in the first region and that of the first perovskite material in the second region. Δ Let C be the energy level difference between the conduction band bottom of the first perovskite material in the first region and that in the second region. Δ The perovskite layer satisfies at least two of the following three characteristics (t1), (t2), and (t3): (t1) A Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t2)C Δ and B Δ The absolute value of the difference is less than or equal to 0.05 eV; (t3) The absolute value of the band gap difference between the first perovskite material in the first region and the first perovskite material in the second region is less than or equal to 0.02 eV; When the first surface is used for electron transport, A Δ B Δ and C Δ Each is independently greater than 0 eV, and A Δ B Δ and C Δ At least one of them is greater than or equal to 0.08 eV; or, When the first surface is used to transmit holes, A Δ B Δ and C Δ Each is independently less than 0 eV, and A Δ B Δ and C Δ At least one of them is less than or equal to -0.08 eV.

21. The method for fabricating an optoelectronic device according to claim 20, characterized in that, The method for fabricating the optoelectronic device satisfies one or more of the following characteristics: (c1) In the step of drying on a stage at 0℃~70℃ to remove part of the first solvent, the stage temperature is 20℃~35℃ and the drying time is 1s~100s, which can be selected as 10s~60s. Optionally, the drying process employs an air knife purging method; (c2) The first additive is the first additive in the optoelectronic device according to claim 8; (c3) The concentration of the first additive in the additive dispersion is 1 mg / mL to 4 mg / mL; (c4) The laser annealing adopts a gradient annealing method; optionally, the laser annealing includes performing a first stage annealing at a first temperature and then performing a second stage annealing at a second temperature; wherein, the first temperature is lower than the second temperature; Optionally, the first temperature is 85℃~95℃, and the second temperature is 130℃~140℃; Optionally, the laser power for annealing at the first temperature is 100W~200W, and the laser power for annealing at the second temperature is 750W~850W; Optionally, the annealing time at the first temperature is shorter than the annealing time at the second temperature; Optionally, the annealing time at the first temperature is 1s to 5s, and the annealing time at the second temperature is 8s to 15s. (c5)A Δ B Δ and C Δ A in the optoelectronic device according to any one of claims 2 to 3 Δ B Δ and C Δ Requirements.

22. An electrical appliance, characterized in that, It includes at least one of the optoelectronic devices according to any one of claims 1 to 19 and optoelectronic devices prepared by the preparation method of any one of claims 20 to 21.

23. A power generation device, characterized in that, The optoelectronic device includes the optoelectronic device prepared by the preparation method of the optoelectronic device according to any one of claims 1 to 19 and any one of claims 20 to 21.

Images