Plate core assembly, cover body assembly, hot plate module and semiconductor processing equipment

Abstract

The invention provides a disc core assembly, a cover body assembly, a hot disc module and semiconductor processing equipment. The disc core assembly comprises a disc body and an air supply assembly, the air supply assembly comprises an inner ring piece and an outer ring piece, an annular air outlet channel is formed between the inner ring piece and the outer ring piece, a pre-pressurizing cavity is formed in the air supply assembly, and the outlet end of the air inlet channel faces the wall face of the pre-pressurizing cavity so that entering air can enter the annular air outlet channel after being blocked and diffused through the wall face. And uniform gas supply is realized. According to the technical scheme, the gas supply assembly with the pre-pressurizing cavity is arranged, and online pressure equalizing operation of the process gas is achieved according to the principle that the gas impacts the wall face to be diffused. Uniformity and stability of a gas environment in a heat treatment process can be guaranteed, and quality and consistency of process treatment are guaranteed. Moreover, the voltage-sharing structure is compact in design, can be integrated in an existing module, and does not affect the overall layout of the equipment, so that the normal operation of the equipment is not affected.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing equipment technology, and specifically to a hot plate module core assembly, a cover assembly, a hot plate module, and semiconductor processing equipment. Background Technology

[0002] With the continuous development of semiconductor technology, the requirements for precision control of production equipment are increasing. To adapt to the ever-advancing process nodes, the heat treatment process in semiconductor wet process equipment is gradually transitioning towards higher uniformity and higher stability. Hot plate modules are currently the main components in the industry for addressing the process requirements such as substrate heating and baking.

[0003] Semiconductor substrates come in a variety of sizes, and their process windows are often extremely demanding. The airflow environment inside the hot plate module and around the substrate is crucial for ensuring the uniformity of the process. To achieve more uniform heating or to form an isolation gas curtain, specific process gases need to be delivered to the substrate from a support plate underneath.

[0004] The delivery and processing of process gases can be further divided into several sub-schemes. Existing gas supply methods involve creating several separate air inlets on a support plate, from which the process gas is directly ejected upwards. Generally, to ensure adequate airflow coverage, the number and distribution of these air inlets are subject to stringent design requirements. If the airflow velocity and pressure differences on the substrate surface are too large during the gas supply process, it will not only lead to uneven temperature distribution on the substrate surface but may also affect the consistency of chemical reaction rates. Furthermore, it may cause more serious problems such as particulate contamination due to localized airflow disturbances. Summary of the Invention

[0005] To address the issue of uneven gas supply in hot plate modules during semiconductor manufacturing, this application provides a core assembly, a cover assembly, a hot plate module, and a semiconductor processing device.

[0006] The present invention provides a core assembly for a hot plate module, including a plate body and a gas supply assembly. The plate body has a support surface for supporting a substrate, and the gas supply assembly is used to supply gas to the surrounding area of ​​the substrate. The gas supply assembly includes an inner ring and an outer ring, which are coaxially arranged and define an annular gas outlet channel communicating with one side of the support surface. A pre-charge chamber is formed inside the inner ring and / or the outer ring and communicates with the annular gas outlet channel. An inlet channel is used to introduce gas into the pre-charge chamber. The outlet end of the inlet channel is disposed facing the wall of the pre-charge chamber, so that the gas entering the pre-charge chamber is blocked by the wall and diffused into the pre-charge chamber before entering the annular gas outlet channel.

[0007] Preferably, the cross-sectional area of ​​the pre-charge chamber is larger than the cross-sectional area of ​​the annular outlet channel, and the radial width of the pre-charge chamber is 3 to 20 times the width of the annular outlet channel; or, the width of the annular outlet channel is uniform in the circumferential direction, and the width is between 0.1 mm and 2 mm; or, the inlet channel includes a plurality of inlets uniformly distributed in the circumferential direction.

[0008] Preferably, the pre-charge chamber is an annular air groove formed by the inward contraction of the bottom of the inner ring component, the wall surface is the top surface of the annular air groove, and the air inlet of the air inlet channel is opened on the bottom surface of the annular air groove and faces the top surface.

[0009] Preferably, the air inlet of the air intake channel is located on the inner wall of the outer ring component, and the wall surface is the outer peripheral wall surface of the inner ring component.

[0010] Preferably, the gas supply assembly further includes a plurality of positioning elements, which are disposed between the inner ring element and the outer ring element to ensure the concentricity of the inner ring element and the outer ring element.

[0011] Preferably, the positioning element is a positioning key or a positioning pin, and the outer peripheral wall of the inner ring is provided with a plurality of positioning grooves for accommodating the positioning element, and the positioning element is attached to the inner wall of the outer ring; or, the number of the positioning elements is three or four and they are evenly distributed along the circumferential direction.

[0012] Preferably, the top edge of the inner ring and the top edge of the outer ring are formed as inclined structures that slope toward the center of the support surface, so that the outlet of the annular air outlet channel converges toward the center of the support surface.

[0013] The present invention provides a cover assembly for a hot plate module, including a shell and a flow equalization plate. The shell defines an internal cavity and has an exhaust port for connecting an exhaust pipe. The flow equalization plate is disposed in the internal cavity of the shell, below the exhaust port, dividing the internal cavity into an upper exhaust chamber and a lower processing chamber. The flow equalization plate has a plurality of through guide holes for connecting the processing chamber and the exhaust chamber. The flow equalization plate has a solid blocking area that covers the area where the exhaust port is projected along the normal direction of the flow equalization plate. The guide holes are distributed outside the solid blocking area to force airflow from the processing chamber through the guide holes to the exhaust chamber and converge to the exhaust port within the exhaust chamber.

[0014] Preferably, the aperture or distribution density of the flow guide holes varies along the direction away from the solid blocking area, wherein the flow guide holes near the edge of the processing chamber have a larger aperture or higher distribution density than the flow guide holes near the center; or, the exhaust port is formed above the geometric center of the flow equalization plate.

[0015] Preferably, the system further includes a partition and a heating assembly, wherein the partition is disposed between the flow equalization plate and the outer casing, the exhaust chamber is formed between the flow equalization plate and the partition, and the heating assembly is disposed between the partition and the top inner wall of the outer casing.

[0016] The present invention provides a hot plate module, including a module body, a support plate, a plate cover, and an exhaust airflow path. The module body is configured to be pushed into a compartment of a semiconductor processing device along the insertion direction. The support plate is disposed within the module body. The plate cover is disposed above the support plate and has an exhaust port. The exhaust airflow path is disposed on the plate cover, with one end connected to the exhaust port of the plate cover and the other end extending to the back of the module body to form a docking air vent. The opening of the docking air vent is parallel to the insertion direction. When the module body is pushed into the compartment, the docking air vent forms a sealed connection with the device exhaust interface within the compartment.

[0017] Preferably, a flexible sealing gasket is provided on the outlet end face of the connecting air port to form a compression seal when the connecting air port is connected to the exhaust interface of the equipment.

[0018] Preferably, one of the docking air vents or the equipment exhaust interface is designed with a tapered guide surface to guide the two to align with each other during the docking process; or, the exhaust flow path is provided with a valve, which is a butterfly valve or a gate valve, to regulate the gas flow rate through the exhaust flow path.

[0019] Preferably, the carrier disk includes the disk core assembly as described in any one of claims 1 to 7.

[0020] Preferably, the disc cover is a cover assembly as described in any one of claims 8 to 10.

[0021] The present invention provides a semiconductor processing device, including a rack and a hot plate module as described in any one of claims 11 to 15. The rack has at least one compartment for accommodating the hot plate module. An exhaust port is provided on the rear wall of the compartment and is connected to a negative pressure suction system. The hot plate module is detachably installed in the compartment. The connecting air vent of the hot plate module is connected to the exhaust port to form a communicating airflow channel.

[0022] Preferably, the rack has multiple compartments, which are grouped together, and the exhaust port of each group of compartments is connected to an independent main exhaust pipe.

[0023] The technical solution of this application mainly utilizes a gas supply assembly with a pre-pressurized chamber. When gas enters the pre-pressurized chamber, it impacts the wall surface to achieve forced diffusion and pressure equalization, thereby achieving uniform gas output from the annular outlet channel. This solution ensures a uniform and stable airflow environment around the substrate during the heat treatment process, guaranteeing the quality of the process. Furthermore, the integrated rear exhaust connection structure enables rapid insertion and removal of the hot plate module without occupying additional piping connection time, thus not affecting equipment maintenance efficiency. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device according to an embodiment of the present invention.

[0025] Figure 2 for Figure 1 A schematic diagram of the structure of the heating plate module.

[0026] Figure 3 This is an exploded view of the structure of a cover component in an embodiment of the present invention.

[0027] Figure 4 This is a cross-sectional structural diagram of the hot plate module in an embodiment of the present invention.

[0028] Figure 5 for Figure 4 A partially enlarged schematic diagram of the center plate cover.

[0029] Figure 6 This is a partially enlarged schematic diagram of the disk core assembly in an embodiment of the present invention.

[0030] In the picture:

[0031] 10: Hot plate module; 11: Module body; 12: Support plate; 13: Plate cover; 100: Plate core assembly; 110: Plate body; 111: Support surface; 120: Air supply assembly; 121: Inner ring component; 1211: Positioning groove; 122: Outer ring component; 123: Annular air outlet channel; 124: Pre-charge chamber; 1241: Wall surface; 125: Air inlet channel; 1251: Air inlet; 126: Positioning component; 127: Chamfered structure; 200: Cover assembly; 21 0: Outer shell; 211: Exhaust port; 212: Internal cavity; 220: Flow equalization plate; 221: Guide hole; 222: Solid blocking area; 230: Exhaust chamber; 240: Processing chamber; 250: Partition; 260: Heating component; 300: Exhaust airflow path; 310: Connecting air outlet; 311: Flexible sealing gasket; 312: Conical guide surface; 320: Valve; 1: Semiconductor processing equipment; 2: Rack; 3: Compartment; 4: Equipment exhaust interface; 5: Main exhaust pipe. Detailed Implementation

[0032] The present patent type will be described in detail below with reference to the accompanying drawings and specific embodiments. In this specification, the dimensions in the drawings do not represent actual size ratios. The drawings are only used to illustrate the relative positional and connection relationships between the components. Components with the same name or the same reference numerals represent similar or identical structures and are limited to illustrative purposes.

[0033] Figure 1 This is a schematic diagram of a semiconductor processing apparatus 1 according to an embodiment of the present invention. Typically, a substrate requiring heat treatment, such as a wafer, is placed on a hot plate module 10 for heating and baking processes. The hot plate module 10 is commonly a pluggable module integrated within a rack 2, with internal structures for supporting and processing the substrate. In a large semiconductor processing apparatus 1, the hot plate module 10 can be replaced and maintained as an independent unit. Although the term "substrate" is used to refer to the workpiece to be processed in this application, it should be noted that all embodiments mentioned below are equally applicable to other types of wafer workpieces.

[0034] Figure 2 for Figure 1 A schematic diagram of the hot plate module 10. Regardless of the process scenario, the uniformity of the airflow environment within the hot plate module 10 directly affects the final process result. In some processes, airflow is uneven, meaning that the velocity and pressure of the airflow differ in different areas of the substrate surface. Airflow uniformity is defined under specific scenarios, such as requiring consistent airflow velocity and pressure throughout the annular area when forming an isolation air curtain, or establishing a uniform suction field during auxiliary baking to remove volatiles. This unevenness can be described by the standard deviation of airflow parameters at different locations. Figure 2A concrete demonstration was provided, showing that the hot plate module 10 includes a module body 11, a carrier plate 12, and a plate cover 13. During processing, the substrate is placed on the carrier plate 12, and the plate cover 13 covers it. Intuitively, uneven airflow may occur during the supply of air to the carrier plate 12 and the exhaust of air from the plate cover 13. Under these circumstances, precise heat treatment of the substrate becomes challenging. The high requirement for airflow uniformity is particularly evident in the processing of small-size nodes. Process uniformity requires that the processing conditions at all points on the substrate be essentially consistent to ensure the yield and performance consistency of the final product.

[0035] like Figure 4 As shown, to solve the problem of airflow uniformity during substrate processing, specific designs are required for the structures of the carrier disk 12 and the disk cover 13. The carrier disk 12 is specifically a disk core assembly 100, equipped with an air supply assembly 120. The disk cover 13 is specifically a cover assembly 200, equipped with an exhaust structure. Taking air supply uniformity as an example, the air supply assembly 120 typically needs to generate uniform airflow.

[0036] like Figure 6 The schematic diagram is shown. To simultaneously provide pressure equalization for process gases, the gas supply component 120 included in the core assembly 100 utilizes a pre-charge chamber 124 to buffer the gas, achieving uniform gas supply and restoring the gas from an uneven state to uniformity before reaching the substrate. Figure 6 Taking the illustrated embodiment as an example, the gas supply assembly 120 includes an inner ring 121 and an outer ring 122, forming an annular gas outlet channel 123 between them. Based on this structure, gas can be ejected from the annular gas outlet channel 123. If an external gas source supplies gas through the air inlet channel 125, then under the designed pre-pressurization chamber 124 structure, the gas can be pre-pressurized by the gas supply assembly 120 to form a uniform air curtain, thereby achieving uniform airflow output.

[0037] Figure 6 This only illustrates one embodiment of the gas supply assembly 120 in this scheme. Generally, the inner ring 121 and the outer ring 122 are coaxially arranged to form a uniformly wide annular gas outlet channel 123 during operation. In an optimized design, a pre-pressurization chamber 124 is formed inside the gas supply assembly 120, which communicates with the annular gas outlet channel 123. If external gas enters, the gas pressure can be equalized by controlling the gas entry method, resulting in a uniform pressure distribution of the gas before ejection.

[0038] Figure 6This is a partially enlarged schematic diagram of the disk core assembly 100 of the carrier disk 12 in this embodiment. The disk core assembly 100 includes a disk body 110 and a gas supply assembly 120. Specifically, the gas supply assembly 120 forms an annular gas outlet channel 123 by the coaxial arrangement of an inner ring member 121 and an outer ring member 122. When process gas needs to be supplied, the gas enters the pre-charge chamber 124 through the gas inlet channel 125. Considering the need for reasonable layout and the convenience of gas pressure equalization, the outlet end of the gas inlet channel 125 is arranged facing the wall surface 1241 of the pre-charge chamber 124. Figure 6 As shown, after the gas enters through the inlet 1251, it first impacts the wall 1241, causing its flow direction to change. Independent impact and diffusion control of the gas flow can be achieved through the specific geometry of the pre-charge chamber 124.

[0039] When equalizing the gas pressure, the gas first enters the pre-pressurized chamber 124, allowing it to be buffered and expanded within the chamber. Then, the gas is controlled to impact the wall 1241 and diffuse along the chamber, thereby causing the gas pressure throughout the chamber to tend towards uniformity, restoring it from an uneven state to the required uniform state.

[0040] Based on the above embodiments, the disk core assembly 100 can preferably have a positioning element 126 disposed between the inner ring 121 and the outer ring 122. This mainly addresses the concentricity issue between the inner ring 121 and the outer ring 122. In the technical solutions of the above embodiments, the inner ring 121 and the outer ring 122 are essentially fixed only by an assembly relationship, which is a single fit and not conducive to maintaining concentricity over the long term, and the assembly stability is limited. In the improved solution, the positioning element 126 is placed between the inner ring 121 and the outer ring 122. During assembly, the positioning element 126 can ensure their concentricity, reducing the risk of uneven width of the annular air outlet channel 123 due to concentricity deviation and reducing the possibility of subsequent uneven air outlet, thereby correspondingly improving the stability of the process.

[0041] Figure 3 and Figure 5 The illustrated embodiment is merely one technical solution for achieving uniform exhaust gas distribution in the cover assembly 200 based on the structure of the flow equalization plate 220. In the structural design of the cover assembly 200, the flow equalization plate 220 typically has guide holes 221; however, it is also feasible to have a solid blocking area 222 directly below the exhaust port 211. Overall, as long as the airflow within the processing chamber 240 does not form vortices above the substrate during extraction, and the structural constraints are met, the uniformity of air extraction above the substrate can be guaranteed.

[0042] The aforementioned core assembly 100 and cover assembly 200 can be applied to the hot plate module 10. For example... Figure 1As shown, the hot plate module 10 can be applied to a semiconductor processing equipment 1. The semiconductor processing equipment 1 is equipped with a rack 2, and the rack 2 has a compartment 3 that can accommodate the hot plate module 10. The hot plate module 10 can be pushed into or pulled out of the compartment 3 as a whole. To achieve convenient pipeline connection, the rear of the hot plate module 10 is provided with a docking air port 310, which can optionally achieve a sealed docking with the equipment exhaust interface 4 on the rear wall of the compartment 3 via a flexible sealing gasket 311 or other means. The insertion and removal of the hot plate module 10 is mainly used for equipment maintenance or replacement. In the general process of the hot plate module 10, initially, the hot plate module 10 is outside the compartment 3. When installation is required, the hot plate module 10 is pushed into the compartment 3, and its docking air port 310 automatically docks with the equipment exhaust interface 4. During the above docking process, when the hot plate module 10 has completely entered the compartment 3, the docking structure is controlled to form an airtight connection between the two, thereby returning the equipment to the normal working state, that is, the installation operation is completed. After installation and functional verification are completed, the hot plate module 10 returns to normal working status in an orderly manner, completing a complete installation process.

[0043] The specific design of the semiconductor processing equipment 1 is not limited to the above embodiments. Several bays 3 can be flexibly arranged on the rack 2, for example... Figure 1 The design of the semiconductor processing device 1 with multiple compartments 3 is shown in the image. Other similar semiconductor processing device technologies are not limited to... Figure 1 As shown. In Figure 1 In this configuration, multiple compartments 3 are arranged sequentially in a vertical direction, and can be centrally managed by mounting them on the same rack 2. However, to improve exhaust efficiency, the exhaust ducts between compartments 3 are preferably connected in groups, meaning that the exhaust ports 4 of several compartments 3 are connected to a single, independent main exhaust pipe 5, without interference. This allows two or more groups of compartments 3 to exhaust without waiting for each other, potentially solving the pressure drop problem caused by excessively long main ducts, thereby improving the efficiency of exhaust operations. Figure 1 As shown, the two sets of compartments 3 can be arranged in layers within the rack 2. In this case, at least one of the two sets of compartments 3 is configured to be connected to a separate main exhaust pipe 5.

[0044] Corresponding to the aforementioned disk core assembly 100 or the hot plate module 10 having the disk core assembly, its pressure equalization method can be based on Figure 6 Explanation: The gas diffuses through the interaction between the intake channel 125 and the wall 1241 of the pre-charge chamber 124, thereby restoring the gas pressure in the pre-charge chamber 124 to the required uniform state.

[0045] The uniform gas supply method can first be implemented based on fluid dynamics design. Based on preliminary analysis of gas flow characteristics, at least the flow direction within the pre-pressurization chamber 124 is determined, and the pressure equalization target is clearly defined beforehand. According to the flow direction and pressure equalization target, the internal flow pattern of the pre-pressurization chamber 124 after gas is supplied from the inlet channel 125 is determined, so that the pressure gradient within the pre-pressurization chamber 124 gradually decreases due to gas diffusion. During this process, the pressure distribution within the pre-pressurization chamber 124 can be obtained through simulation or experiment. When the pressure distribution meets the required uniformity, the final structural design is determined, ensuring that the gas is maintained within the pre-pressurization chamber 124 under the required pressure distribution. In this embodiment, the gas pressure distribution is typically determined by the pressure values ​​at several points within the chamber, which can then be simulated using simulation software. In specific applications, computational fluid dynamics software can typically be used for simulation, or the pressure at different points within the same chamber can be determined using several pressure sensors, thereby determining the pressure field distribution.

[0046] The uniform gas supply method can also be determined by controlling the gas flow based on pre-known structural parameters, eliminating the need for pressure feedback from sensors during the pressure equalization process. The process involves determining the flow rate requirement of the heating plate module 10 under operating conditions based on other measurement inputs. Since the required uniformity index is generally known in advance, the dimensions of the pre-charge chamber 124 can obviously be determined before controlling the gas supply flow. The dimensions of the pre-charge chamber 124 can serve as the main parameter for gas pressure equalization control.

[0047] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A core assembly for a hot plate module, characterized in that, include: The disk body has a support surface for supporting the substrate; as well as A gas supply assembly for supplying gas to the area surrounding the substrate; The gas supply assembly includes: The inner ring and the outer ring are coaxially arranged, and an annular air outlet channel is defined between them, which connects to one side of the support surface. A pre-charge chamber is formed inside the inner ring and / or outer ring, and the pre-charge chamber communicates with the annular outlet channel; and An air intake passage is used to introduce gas into the pre-charge chamber; The outlet end of the air inlet channel is positioned facing the wall of the pre-pressurization chamber, so that the gas entering the pre-pressurization chamber is blocked by the wall and diffused into the pre-pressurization chamber before entering the annular air outlet channel.

2. The disk core assembly as described in claim 1, characterized in that, The cross-sectional area of ​​the pre-charge chamber is larger than that of the annular outlet channel, and the radial width of the pre-charge chamber is 3 to 20 times the width of the annular outlet channel; or, The annular air outlet channel has a uniform width in the circumferential direction, and the width is between 0.1 mm and 2 mm; or, The air intake channel includes multiple air inlets evenly distributed along the circumference.

3. The disk core assembly as described in claim 1, characterized in that, The pre-charge chamber is an annular air groove formed by the inward shrinkage of the bottom of the inner ring component. The wall surface is the top surface of the annular air groove. The air inlet of the air inlet channel is opened on the bottom surface of the annular air groove and faces the top surface.

4. The disk core assembly as described in claim 1, characterized in that, The air intake of the air intake channel is located on the inner wall of the outer ring component, and the wall surface is the outer peripheral wall surface of the inner ring component.

5. The disk core assembly as described in claim 1, characterized in that, The gas supply assembly also includes multiple positioning elements, which are disposed between the inner ring element and the outer ring element to ensure the concentricity of the inner ring element and the outer ring element.

6. The disk core assembly as described in claim 5, characterized in that, The positioning element is a positioning key or a positioning pin, and the outer peripheral wall of the inner ring is provided with a plurality of positioning grooves for accommodating the positioning element, the positioning element being attached to the inner wall of the outer ring; or, The number of positioning elements is three or four, and they are evenly distributed along the circumference.

7. The disk core assembly as described in claim 1, characterized in that, The top edge of the inner ring and the top edge of the outer ring are formed into an inclined structure that slopes toward the center of the support surface, so that the outlet of the annular air outlet channel converges toward the center of the support surface.

8. A cover assembly for a hot plate module, characterized in that, include: The outer shell defines an internal cavity, and the outer shell is provided with an exhaust port for connecting an exhaust pipe; A flow equalization plate is disposed in the internal cavity of the housing, located below the exhaust port, dividing the internal cavity into an exhaust chamber located above and a processing chamber located below; The flow equalization plate is provided with several through guide holes for connecting the processing chamber and the exhaust chamber; The flow equalization plate has a solid blocking area that covers the area where the exhaust port is projected along the normal direction of the flow equalization plate. The guide holes are distributed in the area outside the solid blocking area to force the airflow from the processing chamber through the guide holes to the exhaust chamber, and to converge at the exhaust port in the exhaust chamber.

9. The cover assembly as claimed in claim 8, characterized in that, The aperture or distribution density of the flow guide holes varies along the direction away from the solid blocking region, wherein the flow guide holes near the edge of the processing cavity have a larger aperture or higher distribution density than the flow guide holes near the center; or, The exhaust port is formed above the geometric center of the flow equalization plate.

10. The cover assembly as claimed in claim 9, characterized in that, It also includes a partition and a heating assembly, wherein the partition is disposed between the flow equalization plate and the outer shell, the exhaust chamber is formed between the flow equalization plate and the partition, and the heating assembly is disposed between the partition and the top inner wall of the outer shell.

11. A hot plate module, characterized in that, include: The main body of the module is configured to be able to be pushed into a compartment of a semiconductor processing device along the insertion direction; A support plate is disposed within the main body of the module; A cover is disposed above the support plate, and the cover has an exhaust port; as well as An exhaust airflow path is provided on the cover, with one end of the exhaust airflow path connected to the exhaust port of the cover and the other end extending to the back of the module body to form a docking air vent. The opening of the docking air vent is parallel to the insertion direction. When the main body of the module is pushed into the compartment, the docking air vent forms a sealed connection with the exhaust port of the equipment in the compartment.

12. The hot plate module as described in claim 11, characterized in that, A flexible sealing gasket is provided on the outlet end face of the connecting air port to form a compression seal when the connecting air port is connected to the exhaust interface of the equipment.

13. The hot plate module as described in claim 11, characterized in that, One of the docking vents or the equipment exhaust port is designed with a tapered guide surface to guide the two to align during the docking process; or, The exhaust flow path is equipped with a valve, which is a butterfly valve or a gate valve, used to regulate the gas flow rate through the exhaust flow path.

14. The hot plate module as described in any one of claims 11-13, characterized in that, The carrier disk includes the disk core assembly as described in any one of claims 1 to 7.

15. The hot plate module as described in any one of claims 11-13, characterized in that, The disc cover is a cover assembly as described in any one of claims 8 to 10.

16. A semiconductor processing apparatus, characterized in that, include: The rack has at least one compartment for accommodating a hot plate module, and the rear wall panel of the compartment is provided with an equipment exhaust port, which is connected to a negative pressure suction system. as well as The hot plate module as described in any one of claims 11 to 15 is detachably installed in the compartment; The hot plate module's air inlet is connected to the device's exhaust port to form a connected airflow channel.

17. The semiconductor processing apparatus as claimed in claim 16, characterized in that, The rack has multiple compartments, which are grouped together, and the exhaust port of each group of compartments is connected to an independent main exhaust pipe.

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