Touch screen and preparation method thereof

Abstract

The invention provides a touch screen and a preparation method thereof, and the preparation method of the touch screen comprises the steps: carrying out the patterning processing of a conductive film on a first surface of a substrate, so as to form a first electrode pattern layer; performing conductive interconnection processing on the first electrode pattern layer to form a first silver paste wiring layer; the first silver paste wiring layer is coated with a film to form a first SiNOx protection layer, on one hand, compared with the prior art, the first SiNOx protection layer is used for replacing insulating oil, the compactness and stability of SiNOx are better, the problems of silver paste migration and oxidation can be well solved, and in addition, the SINOx can also solve the problem that the insulating oil can affect the square resistance of the first electrode pattern layer; and on the other hand, the whole technological process does not need multiple times of film coating and photoetching, and the preparation cost is reduced.

Description

Technical Field

[0001] This application relates to the field of touch screen technology, specifically to a touch screen and its manufacturing method. Background Technology

[0002] Currently, touchscreens, as an input device, allow users to directly input information on the surface of a display device equipped with a touchscreen by tapping or handwriting. This is more user-friendly and convenient than input devices such as mice and keyboards, and therefore, they are increasingly widely used in various portable devices (such as mobile phones and PDAs). There are many types of existing touchscreen technologies, which can be categorized into resistive, capacitive, infrared, and surface acoustic wave types, depending on the type of contact material used and the method of confirming the contact point position. With the maturity of capacitive control IC technology, the decrease in cost, and some unique advantages compared to other technologies (such as no force required, less prone to damage, and long-term use), the application of capacitive touchscreens is becoming increasingly widespread.

[0003] In the existing technology, the manufacturing process of capacitive touch screens mainly uses SITO (Single ITO) as the conductive material, then etches electrode patterns, dry-etches silver paste lines, and finally plating insulating oil. This method results in poor density and stability of the insulating oil, leading to problems such as silver paste migration and oxidation. Summary of the Invention

[0004] This application mainly provides a touch screen and its manufacturing method, aiming to solve the problem of poor insulation and stability of insulating oil, which leads to silver paste migration and oxidation.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a method for manufacturing a touch screen, the method comprising: patterning a conductive film on a first surface of a substrate to form a first electrode pattern layer; performing conductive interconnection processing on the first electrode pattern layer to form a first silver paste wiring layer; and depositing a first SiNOx protective layer on the first silver paste wiring layer.

[0006] In one specific embodiment, the thickness of the first SiNOx protective layer is 200 Å to 1000 Å.

[0007] In one specific embodiment, the step of patterning the conductive film on the first surface of the substrate to form a first electrode pattern layer includes: screen printing an etch-resistant agent onto the conductive film on the first surface of the substrate; and etching the conductive film on the first surface of the substrate to form the first electrode pattern layer.

[0008] In one specific embodiment, the step of patterning the conductive film on the first surface of the substrate to form a first electrode pattern layer includes: transferring a pattern on a photomask onto the conductive film on the first surface of the substrate using a photolithography process; and etching the conductive film on the first surface of the substrate to form the first electrode pattern layer.

[0009] In one specific embodiment, the step of transferring the pattern on the photomask to the conductive film on the first surface of the substrate by photolithography includes: transferring the electrode pattern on the photomask to the electrode region of the conductive film by photolithography; the step of etching the conductive film on the first surface of the substrate to form the first electrode pattern layer includes: etching the electrode region of the conductive film to form the electrode pattern.

[0010] In one specific embodiment, the step of transferring the pattern on the mask to the conductive film on the first surface of the substrate by photolithography further includes: transferring the wiring pattern on the mask to the wiring area of ​​the conductive film by photolithography; the step of etching the conductive film on the first surface of the substrate to form the first electrode pattern layer further includes: etching the wiring area of ​​the conductive film to form the wiring pattern.

[0011] In one specific embodiment, the conductive interconnection process performed on the first electrode pattern layer to form the first silver paste trace layer includes: screen printing silver paste on the first electrode pattern layer; and forming the first silver paste trace layer by a dry etching process.

[0012] In one specific embodiment, screen printing silver paste on the first electrode pattern layer includes: screen printing silver paste on the wiring pattern.

[0013] In one specific embodiment, the preparation method further includes: patterning a conductive film on the second surface of the substrate to form a second electrode pattern layer; performing conductive interconnection processing on the second electrode pattern layer to form a second silver paste wiring layer; and depositing a second SiNOx protective layer on the second silver paste wiring layer.

[0014] To solve the above-mentioned technical problems, another technical solution adopted in this application is: to provide a touch screen, which is prepared by the above-described preparation method, and the touch screen includes the substrate, the first electrode pattern layer, the silver paste wiring layer and the first SiNOx protective layer.

[0015] The beneficial effects of this application are as follows: Unlike the prior art, the touch screen fabrication method provided by this application includes: patterning a conductive film on a first surface of a substrate to form a first electrode pattern layer; performing conductive interconnection processing on the first electrode pattern layer to form a first silver paste wiring layer; and depositing a first SiNOx protective layer on the first silver paste wiring layer. On the one hand, compared with the prior art, using a first SiNOx protective layer instead of insulating oil results in better density and stability of SiNOx, which can effectively prevent silver paste migration and oxidation problems. In addition, SiNOx can also solve the problem that insulating oil affects the sheet resistance of the first electrode pattern layer. On the other hand, the entire process does not require multiple depositions and photolithography, reducing the fabrication cost. For example, when using the method in steps S1101-S1102 above, only a low-cost screen printing plate is needed, and the photolithography mask is not required, saving the mold opening cost of the mask. When using the method in steps S110a-S110b above, only one photolithography mask is needed, which can also reduce the mold opening cost of the mask. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of one embodiment of the touchscreen provided in this application; Figure 2 This is a schematic flowchart of one embodiment of the touchscreen manufacturing method provided in this application; Figure 3 yes Figure 2 A detailed flowchart of step S110 of the implementation method; Figure 4 yes Figure 2 A detailed flowchart illustrating another embodiment of step S110; Figure 5 yes Figure 4 A detailed flowchart of step S110a, one of the implementation methods; Figure 6 yes Figure 1 A top view of the first electrode pattern layer; Figure 7 yes Figure 4 A detailed flowchart of the implementation method of step S110b; Figure 8 yes Figure 1A schematic diagram of the specific process in one embodiment of step S120; Figure 9 This is a schematic diagram of another embodiment of the touchscreen provided in this application; Figure 10 This is a schematic flowchart illustrating another embodiment of the touchscreen manufacturing method provided in this application. Detailed Implementation

[0018] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be noted that the following embodiments are for illustrative purposes only and do not limit the scope of the application. Similarly, the following embodiments are only some, not all, embodiments of the present application, and all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application.

[0019] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indication will change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. A process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0020] In this document, the term "implementation" means that a specific feature, structure, or characteristic described in connection with an implementation may be included in at least one implementation of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same implementation, nor is it a separate or alternative implementation mutually exclusive with other implementations. It will be explicitly and implicitly understood by those skilled in the art that the implementations described herein can be combined with other implementations.

[0021] Please refer to the following: Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of one embodiment of the touchscreen 10 provided in this application. Figure 2 This is a flowchart illustrating one embodiment of the fabrication method of the touchscreen 10 provided in this application. The touchscreen 10 in one embodiment of this application includes a substrate 11, a first electrode pattern layer 12, a first silver paste wiring layer 13, and a first SiNOx protective layer 14. The fabrication method of the touchscreen 10 in one embodiment of this application includes: S110: The conductive film on the first surface of the substrate 11 is patterned to form the first electrode pattern layer 12. In practical applications, the substrate 11 can be made of materials such as glass, PC (polycarbonate) board, acrylic board or PET (polyterephthalic acid plastic), and the conductive film can be made of ITO (indium tin oxide) film. Before the conductive film is patterned, it needs to be blanked, or the substrate 11 that has been blanked can be used directly to suppress reflection, eliminate pattern afterimages / shadows, and improve photolithography resolution and edge quality. The thickness of the blanking coating can be 500±150Å, which can effectively solve the color difference problem and eliminate the shadow problem of the first electrode pattern layer 12.

[0022] Please see Figure 3 , Figure 3 yes Figure 2 A detailed flowchart of one embodiment of step S110 is shown. In this embodiment, step S110 includes: S1101: Etching resistant agent for screen printing conductive film on the first surface of substrate 11; Specifically, an etch-resistant agent (such as an etch-resistant oil) is screen-printed onto the conductive film on the first surface to protect the area, thus forming a mask pattern.

[0023] S1102: Etch the conductive film on the first surface of the substrate to form the first electrode pattern layer 12.

[0024] For example, the first electrode pattern layer 12 can be formed by using a wet etching method, which involves etching the areas on the conductive film that are not screen-printed with etchant using a mixture of HCl and FeCl3.

[0025] After etching is completed, the etchant can be stripped, for example by soaking or spraying with a 2%–5% NaOH solution to remove the etchant remaining on the first electrode pattern layer 12. Then, it is cleaned, for example by rinsing with pure water, then neutralizing with a weak acid, rinsing with pure water again, and finally drying with hot air. After drying, it is checked whether there is any etchant residue, whether the pattern of the first electrode pattern layer 12 is complete, and whether there are any burrs, so as to avoid these problems from affecting subsequent processes.

[0026] Please refer to the following: Figure 4 , Figure 5 , Figure 6 and Figure 7 , Figure 4 yes Figure 2 A detailed flowchart illustrating another embodiment of step S110 is shown below. Figure 5 yes Figure 4 A detailed flowchart of step S110a, one of the implementation methods, is shown below. Figure 6 yes Figure 1 A top view of the first electrode pattern layer 12. Figure 7 yes Figure 4 A detailed flowchart of one embodiment of step S110b is shown. In this other embodiment, step S110 includes: S110a: The pattern on the photomask is transferred to the conductive film on the first surface of the substrate 11 by photolithography. Specifically, photoresist is first coated onto the conductive film on the first surface. The photoresist is typically coated by spin coating. Then, the photomask is aligned and exposed. Exposure can be performed using contact exposure (the photomask and photoresist surface are in contact, with a 0μm gap), proximity exposure (the gap between the photomask and photoresist is 10–50μm), or projection exposure (the photomask and photoresist do not directly contact each other; imaging is achieved through an optical system). After exposure, the light source is turned off, and a developer matching the photoresist is used for development. Development can be performed by immersion development, where the substrate 11 is immersed in the developer and left to stand for a period of time, or by spray development, where the developer is sprayed through… High-pressure spraying can be used to spray onto the conductive film. Alternatively, ultrasonic development can be employed, superimposed with low-frequency ultrasonic vibrations on top of immersion development or spray development. The ultrasonic cavitation effect accelerates the dissolution of photoresist in the exposed area, improving the uniformity of development and the resolution of fine patterns. After development, the substrate 11 is rinsed. For example, deionized water can be used to spray or immerse the substrate 11. The rinsing is generally repeated 3-5 times to ensure that the developer is completely removed. Finally, the substrate 11 is dried. For example, the substrate 11 can be first spun dry, with high-speed rotation to remove moisture from the surface of the substrate 11, and then the substrate 11 can be dried with hot air or vacuum to avoid water stains.

[0027] like Figure 5 and Figure 6 As shown, in one specific embodiment, step S110a may include: S1101a: The electrode pattern on the photomask is transferred to the electrode area of ​​the conductive film using a photolithography process; S1101b: The wiring pattern on the photomask is transferred to the wiring area of ​​the conductive film through photolithography.

[0028] Specifically, the conductive film includes an electrode region R1 and a wiring region R2. In practical applications, different photomasks can be used to transfer the electrode pattern on one photomask to the electrode region R1 of the conductive film and the wiring pattern on another photomask to the wiring region R2 of the conductive film. Alternatively, a single photomask can be used to transfer the electrode pattern on the photomask to the electrode region R1 of the conductive film and the wiring pattern on the photomask to the wiring region R2 of the conductive film simultaneously.

[0029] like Figure 4 As shown, in this other embodiment, step S110 further includes: S110b: Etch the conductive film on the first surface of the substrate to form the first electrode pattern layer 12.

[0030] Specifically, after the above development operation is completed, the area outside the mask pattern on the conductive film is removed by wet etching or dry etching, leaving the area with the mask pattern, thus forming the first electrode pattern layer 12. For example, when using wet etching, a mixture of HCl and FeCl3 is used, and the mixture is sprayed onto the conductive film to complete the etching. Alternatively, when using dry etching, a mixture of BCl3 and Cl2 is used in a vacuum environment for dry etching. After etching, the photoresist is removed and the film is cleaned and dried.

[0031] like Figure 7 As shown, in one specific embodiment, step S110b may include: S1101c: Etching the electrode region R1 of the conductive film to form an electrode pattern; S1101d: The trace area R2 of the conductive film is etched to form a trace pattern.

[0032] Specifically, the first electrode pattern layer 12 that is finally formed includes an electrode pattern and a wiring pattern. Therefore, when the electrode pattern is transferred to the electrode region R1 of the conductive film and the wiring pattern is transferred to the wiring region R2 of the conductive film, the electrode region R1 and the wiring region R2 are etched simultaneously to form the electrode pattern and the wiring pattern.

[0033] Please refer to the following: Figure 1 and Figure 8 , Figure 8 yes Figure 1 A detailed flowchart of step S120 in one embodiment is shown. The method for manufacturing the touchscreen 10 in one embodiment of this application further includes: S120: Conductive interconnection processing is performed on the first electrode pattern layer 12 to form the first silver paste wiring layer 13.

[0034] like Figure 8As shown, in one specific embodiment, step S120 may specifically include: S1201: Silk screen printing silver paste on the first electrode pattern layer; Specifically, a matching screen and matching silver paste are selected. The substrate 11 is placed on the vacuum adsorption stage of the screen printing machine. The substrate 11 is positioned using a camera positioning module to ensure precise alignment between the screen and the first electrode pattern layer 12. Then, the silver paste is evenly coated on one end of the screen, with the amount of silver paste sufficient to cover the width of the screen pattern to avoid waste or ink shortage. Next, a squeegee is used to scrape across the screen at a certain angle and speed to complete the screen printing of silver paste on the first electrode pattern layer 12. In this embodiment, the silver paste can be screen printed on the line pattern. After the silver paste is printed, it is cured, which can be done by drying and cooling. After curing, the silver paste can be tested to check its adhesion, whether there are bubbles, pinholes, broken lines, or burrs on the edges. For example, if the silver paste adhesion is insufficient, the curing time can be increased. If there are broken lines in the silver paste, the screen can be cleaned and silver paste thinner can be added. If there are burrs on the edges of the silver paste, a screen with higher precision can be replaced or the squeegee pressure can be reduced.

[0035] S1202: The first silver paste trace layer 13 is formed by dry etching process.

[0036] First, photoresist coating and patterning are performed. Specifically, photoresist is applied to the silver paste using spin coating. The thickness of the photoresist can be selected according to the requirements. Then, a pre-baking process is performed to enhance the adhesion between the photoresist and the silver paste. Next, an exposure process is performed to ensure that the photoresist pattern accurately covers the silver paste trace areas that need to be retained. After exposure, a post-baking process is performed to eliminate standing waves and sharpen the pattern edges. Then, a development process is performed to dissolve the photoresist in the exposed areas, exposing the silver paste areas that need to be etched. Finally, a hard baking process is performed to solidify the photoresist and improve its resistance to plasma bombardment.

[0037] Secondly, dry etching is performed using the synergistic effect of "chemical reaction + physical bombardment". First, the substrate is placed in a vacuum chamber and heated to a certain temperature. The vacuum can avoid impurities interfering with the reaction and control the temperature to prevent the silver paste from oxidizing. Then, a reaction gas, usually a mixture of O2 and Cl2, is introduced into the vacuum chamber. Cl2 can react with Ag to generate volatile AgCl, and O2 can help remove the resin binder in the silver paste. Then, plasma excitation is performed, ionizing the gas to generate plasma. High-energy ions bombard the surface of the silver paste, thereby completing the etching within a certain time. During the etching process, the etching progress can be monitored in real time. For example, a spectrometer can be used to detect whether the AgCl spectrum disappears. If it is small, the etching is stopped to avoid over-etching and damage to the underlying trace pattern.

[0038] Finally, after dry etching, the photoresist is removed. First, the photoresist is removed by dry methods, such as O2 plasma ashing. Then, it is cleaned, for example, by ultrasonic cleaning with pure water for a certain period of time; then rinsed with 1% dilute hydrochloric acid for a certain period of time, which can remove residual AgCl; then rinsed with pure water for a certain period of time to ensure that there are no ion residues on the surface. After cleaning, it is dried, for example, by hot air drying, to ensure that the surface of the first silver paste wiring layer 13 is free of watermarks and oxide spots.

[0039] In this way, even if the silver paste lines oxidize or break, the wiring pattern on the first electrode pattern layer 12 can still conduct the circuit, further improving product reliability, and this will not increase mold opening costs and manufacturing costs.

[0040] Further reading Figure 1 The method for manufacturing the touchscreen 10 in one embodiment of this application further includes: S130: A first SiNOx protective layer 14 is formed by depositing a film on the first silver paste wiring layer 13.

[0041] Specifically, a first SiNOx protective layer 14 can be deposited using PECVD (plasma-enhanced chemical vapor deposition) process, which achieves high adhesion between the film layer and the silver paste and the first electrode pattern layer 12, and has excellent light transmittance, thereby playing the roles of insulation, water vapor barrier and prevention of silver paste oxidation.

[0042] First, the first silver paste wiring layer 13 is pretreated, for example, by using a mixed plasma of O2 and Ar to clean the surface of the first silver paste wiring layer 13 to prevent the residue on the silver paste surface from affecting the adhesion of the first SiNOx film layer; then, Ar plasma can be used for bombardment to remove the oxide layer on the surface of the first silver paste wiring layer 13 to prevent the oxide layer on the surface of the first silver paste wiring layer 13 from affecting the adhesion of the first SiNOx film layer; finally, a drying process is performed and the dried substrate 11 is transferred to the PECVD chamber.

[0043] Secondly, a first SiNOx protective layer 14 is deposited using PECVD (plasma-enhanced chemical vapor deposition). First, the PECVD chamber is evacuated to a vacuum and then baked to a certain temperature to remove moisture and impurities from the chamber, preventing moisture from mixing into the film layer and causing defects such as pinholes. Then, the substrate 11 is fixed onto the PECVD... Inside the chamber, high-purity N2 is introduced and purged for a certain period to remove residual air. Then, the SiNOx deposition precursor, namely SiH4 (silicon source), NH3 (nitrogen source), and N2O (oxygen source), is introduced. By adjusting the gas ratio, the silicon, oxygen, and nitrogen content in the film is precisely controlled to optimize insulation and light transmittance. For example, the SiH4 flow rate is 20–30 sccm; the silicon source content determines the film density, and an excessively high flow rate can lead to excessive film stress. The NH3 flow rate is 40–60 sccm, with a ratio of 2:1 to SiH4. NH3 provides Si-N bonds, improving moisture barrier properties. The N2O flow rate is 10–20 sccm, with a ratio of 1:3 to 1:4 to NH3. N2O provides Si-O bonds, improving light transmittance and insulation; an excessively high ratio will reduce barrier properties. Finally, plasma is excited, ionizing the gas to generate active free radicals (SiH3). + NH2 + O + The vapor deposition reaction occurs, eventually forming the first SiNOx protective layer 14.

[0044] Finally, in order to improve the stability of the first SiNOx protective layer 14, the first SiNOx protective layer 14 can also be post-treated, for example, first cured by ultraviolet light to enhance the cross-linking degree of the film layer, and then annealed in a nitrogen atmosphere to reduce the internal stress of the film layer.

[0045] Optionally, the thickness of the first SiNOx protective layer 14 is 200Å~1000Å, which can effectively solve the color difference problem and further eliminate the shadow problem of the first electrode pattern layer 12.

[0046] In this embodiment, the touch screen 10 is prepared through steps S110-S130. On the one hand, compared with the prior art, the use of the first SiNOx protective layer 14 instead of insulating oil results in better density and stability of SiNOx, which can effectively prevent silver paste migration and oxidation. In addition, SiNOx can also solve the problem that insulating oil will affect the sheet resistance of the first electrode pattern layer 12. On the other hand, the entire process does not require multiple coating and photolithography, which reduces the preparation cost. For example, when using the method in steps S1101-S1102, only an inexpensive screen printing plate is needed, and the photolithography mask is not required, saving the mold opening cost of the mask. When using the method in steps S110a-S110b, only one photolithography mask is needed, which can also reduce the mold opening cost of the mask.

[0047] It should be noted that since the silver paste wiring layer 13 is only located in the wiring area of ​​the first electrode pattern layer 12, the first electrode pattern layer 12 is also coated with a first SiNOx protective layer 14.

[0048] Please refer to the following: Figure 9 and Figure 10 , Figure 9 This is a schematic diagram of another embodiment of the touchscreen 20 provided in this application. Figure 10 This is a flowchart illustrating another embodiment of the fabrication method of the touchscreen 20 provided in this application. The touchscreen 20 in this other embodiment includes a substrate 11, a first electrode pattern layer 12, a silver paste wiring layer 13, a first SiNOx protective layer 14, a second electrode pattern layer 15, a second silver paste wiring layer 16, and a second SiNOx protective layer 17. Steps S210-S230 in the fabrication method of the touchscreen 20 in this other embodiment are the same as steps S110-S130 in the above embodiment, and will not be repeated here. The fabrication method of the touchscreen 20 in this other embodiment further includes: S240: The conductive film on the second surface of the substrate 11 is patterned to form the second electrode pattern layer 15. The principle and implementation method of step S240 are the same as those of step S110 in the above embodiments, and will not be repeated here.

[0049] S250: Conductive interconnection processing is performed on the second electrode pattern layer 15 to form the second silver paste wiring layer 16; The principle and implementation method of step S250 are the same as those of step S120 in the above embodiments, and will not be repeated here.

[0050] S260: A second SiNOx protective layer 17 is formed by depositing a film on the second silver paste wiring layer 16.

[0051] The principle and implementation method of step S260 are the same as those of step S130 in the above embodiments, and will not be repeated here.

[0052] The beneficial effects of this application are as follows: Unlike the prior art, the touch screen fabrication method provided by this application includes: patterning a conductive film on a first surface of a substrate to form a first electrode pattern layer; performing conductive interconnection processing on the first electrode pattern layer to form a first silver paste wiring layer; and depositing a first SiNOx protective layer on the first silver paste wiring layer. On the one hand, compared with the prior art, using a first SiNOx protective layer instead of insulating oil results in better density and stability of SiNOx, which can effectively prevent silver paste migration and oxidation problems. In addition, SiNOx can also solve the problem that insulating oil affects the sheet resistance of the first electrode pattern layer. On the other hand, the entire process does not require multiple depositions and photolithography, reducing the fabrication cost. For example, when using the method in steps S1101-S1102 above, only a low-cost screen printing plate is needed, and the photolithography mask is not required, saving the mold opening cost of the mask. When using the method in steps S110a-S110b above, only one photolithography mask is needed, which can also reduce the mold opening cost of the mask.

[0053] The above description is only a partial embodiment of this application and does not limit the scope of protection of this application. Any equivalent device or equivalent process transformation made based on the content of this application specification and drawings, or directly or indirectly applied to other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A method for manufacturing a touchscreen, characterized in that, The preparation method includes: The conductive film on the first surface of the substrate is patterned to form a first electrode pattern layer; Conductive interconnection processing is performed on the first electrode pattern layer to form the first silver paste trace layer; A first SiNOx protective layer is formed by depositing a film on the first silver paste trace layer.

2. The preparation method according to claim 1, characterized in that, The thickness of the first SiNOx protective layer is 200 Å to 1000 Å.

3. The preparation method according to claim 1, characterized in that, The step of patterning the conductive film on the first surface of the substrate to form a first electrode pattern layer includes: An etch-resistant agent is screen-printed onto the conductive film on the first surface of the substrate. The conductive film on the first surface of the substrate is etched to form the first electrode pattern layer.

4. The preparation method according to claim 1, characterized in that, The step of patterning the conductive film on the first surface of the substrate to form a first electrode pattern layer includes: The pattern on the photomask is transferred to the conductive film on the first surface of the substrate using a photolithography process. The conductive film on the first surface of the substrate is etched to form the first electrode pattern layer.

5. The preparation method according to claim 4, characterized in that, The process of transferring a pattern from a photomask to a conductive film on the first surface of the substrate via photolithography includes: The electrode pattern on the photomask is transferred to the electrode area of ​​the conductive film using a photolithography process; The etching of the conductive film on the first surface of the substrate to form the first electrode pattern layer includes: The electrode region of the conductive film is etched to form an electrode pattern.

6. The preparation method according to claim 5, characterized in that, The process of transferring the pattern on the photomask to the conductive film on the first surface of the substrate via photolithography further includes: The wiring pattern on the photomask is transferred to the wiring area of ​​the conductive film using a photolithography process. The etching of the conductive film on the first surface of the substrate to form the first electrode pattern layer further includes: The trace area of ​​the conductive film is etched to form a trace pattern.

7. The preparation method according to claim 6, characterized in that, The step of performing conductive interconnection processing on the first electrode pattern layer to form the first silver paste trace layer includes: Silver paste is screen-printed onto the first electrode pattern layer; The first silver paste trace layer is formed by a dry etching process.

8. The preparation method according to claim 7, characterized in that, The process of screen printing silver paste on the first electrode pattern layer includes: Silver paste is screen-printed onto the wiring pattern.

9. The preparation method according to claim 1, characterized in that, The preparation method further includes: The conductive film on the second surface of the substrate is patterned to form a second electrode pattern layer; Conductive interconnection processing is performed on the second electrode pattern layer to form a second silver paste trace layer; A second SiNOx protective layer is formed by depositing a film on the second silver paste trace layer.

10. A touchscreen, characterized in that, The touch screen is prepared by the preparation method according to any one of claims 1 to 9, and the touch screen includes the substrate, the first electrode pattern layer, the silver paste wiring layer and the first SiNOx protective layer.

Images