A back contact cell, cell assembly and photovoltaic system
CN122054747BActive Publication Date: 2026-08-28ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
Patent Information
- Application Number
- CN202610500647.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-16
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2046-04-16
AI Technical Summary
Technical Problem
[0004]本发明提供一种背接触电池，旨在解决现有技术的背接触电池存在第一掺杂多晶硅层与第二掺杂多晶硅层之间电隔离效果较差的问题
Benefits of technology
[0037]本发明提供的一种背接触电池通过在硅衬底的背面设置沿第一方向交替间隔的第一区域和第二区域，在第一区域设置第一掺杂多晶硅层，在第二区域设置第二掺杂多晶硅层，且硅衬底在相邻的第一区域和第二区域之间形成至少一个凸起，第一掺杂多晶硅层与第二掺杂多晶硅层之间利用至少一个凸起相隔开，可以实现第一掺杂多晶硅层与第二掺杂多晶硅层之间电隔离；同时，在背面位于第一掺杂多晶硅层与第二掺杂多晶硅层之间的区域设置隔离层，隔离层的掺杂浓度小于第一掺杂多晶硅层及第二掺杂多晶硅层的掺杂浓度，且隔离层的掺杂浓度小于或等于1E18/cm3，如此控制隔离层的掺杂浓度小于或等于1E18/cm3，利用低掺杂浓度的隔离层，使得隔离层的电流传输能力较弱，隔离层在此掺杂浓度前提下，可以防止第一掺杂多晶硅层及第二掺杂多晶硅层之间导通，本发明的背接触电池利用隔离层和凸起相结合，共同实现第一掺杂多晶硅层与第二掺杂多晶硅层之间隔离，可以提升第一掺杂多晶硅层与第二掺杂多晶硅层之间的电隔离效果，大大降低第一掺杂多晶硅层与第二掺杂多晶硅层之间短路漏电风险，提升背接触电池的性能。
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Figure CN122054747B_ABST
Abstract
The application is suitable for the field of photovoltaic technology, and provides a back contact cell, a cell assembly and a photovoltaic system.The back contact cell comprises a silicon substrate, the silicon substrate comprises a back surface and a front surface, the back surface is provided with first regions and second regions which are alternately and spaced apart along a first direction; at least one protrusion is formed between adjacent first regions and second regions of the silicon substrate; a first doped polysilicon layer is arranged on the first regions; a second doped polysilicon layer is arranged on the second regions; an isolation layer is arranged between the first doped polysilicon layer and the second doped polysilicon layer, and the doping concentration of the isolation layer is less than or equal to 1E18 / cm 3 ; a first metal electrode is electrically connected with the first doped polysilicon layer; and a second metal electrode is electrically connected with the second doped polysilicon layer.The back contact cell can improve the electrical isolation effect between the first doped polysilicon layer and the second doped polysilicon layer, and reduce the risk of short circuit and leakage.
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Citation Information
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