Circuit structure for improving W-band power synthesis debugging efficiency and application packaging structure

Abstract

The embodiment of the invention provides a circuit structure for improving W-band power synthesis debugging efficiency and an application packaging structure, and relates to the technical field of wireless communication equipment, and the circuit structure comprises a structure body, the structure body is provided with a local oscillator power divider, a multi-path phase shift amplification circuit, a multi-path frequency mixing circuit, a multi-path W-frequency-band amplification circuit and a W-frequency-band power synthesis network. Wherein the local oscillator power divider is connected with each phase shift amplification circuit; each phase shift amplification circuit is correspondingly connected with one frequency mixing circuit, and each frequency mixing circuit is correspondingly connected with one W-band amplification circuit; and each W-frequency-band amplifying circuit is connected to the W-frequency-band power synthesis network. According to the circuit structure, the power synthesis efficiency can be improved by externally controlling the numerical control phase shifter without adjusting a hardware circuit.

Description

Technical Field

[0001] This application relates to the field of wireless communication equipment technology, and more specifically, to a circuit structure and application packaging structure for improving the efficiency of W-band power synthesis and debugging. Background Technology

[0002] In radar and communication systems, the transmission link is crucial. It requires up-converting intermediate frequency (IF) signals to radio frequency (RF) signals before transmitting them into space via RF antennas. The greater the power of the RF signal, the longer the communication distance and the wider the coverage area of ​​the system.

[0003] With the development of gallium nitride (GaN) chip technology, commercially available GaN chip power amplifiers have emerged. However, limited by physical constraints such as chip material properties, breakdown voltage, and heat dissipation capabilities, their output power is very limited and cannot meet the needs of modern radar and electronic warfare. Currently, the solution to this output power limitation is typically circuit-level power combining technology, which uses multiple power amplifier chips working in tandem to achieve higher output power.

[0004] Traditional power combining techniques typically employ passive power combining networks at the radio frequency (RF) end to combine energy in the circuit. The advantages are mature technology and ease of implementation; however, significant drawbacks exist. The amplitude and phase consistency of the RF interface of the passive power combining network directly determines the power combining efficiency. Furthermore, within the same passive power combining network, different frequencies will exhibit phase differences, especially in the W-band where wavelengths are very short. In practical applications, chip assembly, chip performance consistency, and the wire profile of the bonding alloys all affect the phase of the RF signal. This approach cannot resolve phase differences between multiple frequencies within the same power combining network in the W-band, nor can it address phase differences caused by assembly and other factors during mass production. Passive power combining networks in the W-band typically utilize coplanar waveguides or metallic waveguides, making it impossible to improve phase differences through tuning, thus limiting the ability to improve power combining efficiency.

[0005] Therefore, there is an urgent need for a circuit structure that can improve power combining efficiency and simultaneously address all the problems mentioned above. Summary of the Invention

[0006] The embodiments of this application provide a circuit structure and application packaging structure for improving the debugging efficiency of W-band power combining, in order to solve the problem of low efficiency of existing W-band multi-frequency point power combining.

[0007] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0008] According to a first aspect of the embodiments of this application, a circuit structure for improving the debugging efficiency of W-band power combining is provided, comprising: The structural body is provided with a local oscillator power divider, a multi-channel phase-shifting amplifier circuit, a multi-channel mixer circuit, a multi-channel W-band amplifier circuit, and a W-band power combining network; The local oscillator power divider is connected to each phase-shifting amplifier circuit, and divides the externally input local oscillator signal into multiple radio frequency signals and transmits them to each phase-shifting amplifier circuit. Each phase-shifting amplifier circuit is connected to a mixer circuit, and each mixer circuit is connected to a W-band amplifier circuit. The mixer circuit receives an intermediate frequency signal, mixes the intermediate frequency signal with the radio frequency signal transmitted from the phase-shifting amplifier circuit to obtain a W-band radio frequency signal, and transmits it to the W-band amplifier circuit. Each W-band amplifier circuit is connected to the W-band power combining network, amplifying each W-band RF signal before transmitting it to the W-band power combining network for combining and output.

[0009] In some embodiments of this application, based on the foregoing scheme, the phase-shifting amplifier circuit includes: a digitally controlled phase shifter and a local oscillator amplifier; The receiving end of the numerically controlled phase shifter is connected to the local oscillator power divider, and the output end is connected to the local oscillator amplifier; The output of the local oscillator amplifier is connected to the mixer circuit.

[0010] In some embodiments of this application, based on the foregoing scheme, the circuit structure further includes: an intermediate frequency signal transmission circuit; The intermediate frequency signal transmission circuit includes: an intermediate frequency power divider and multiple glass beads; The intermediate frequency power divider is connected to each glass bead, and divides the intermediate frequency signal into multiple intermediate frequency signals for transmission to each glass bead. Each glass bead is connected to a corresponding mixer circuit.

[0011] In some embodiments of this application, based on the foregoing scheme, the mixing circuit includes: a mixer; The mixer's first input terminal is connected to the local oscillator amplifier, its second input terminal is connected to a glass bead, and its output terminal is connected to the W-band amplifier circuit.

[0012] In some embodiments of this application, based on the foregoing scheme, the W-band amplifier circuit includes: a W-band driver amplifier, a W-band final stage power amplifier, and a W-band ceramic probe; The input terminal of the W-band driver amplifier is connected to the mixer, and the output terminal is connected to the W-band final stage power amplifier. The output of the final stage power amplifier in the W band is connected to the W band ceramic probe. The output of the W-band ceramic probe is connected to the W-band power combining network.

[0013] In some embodiments of this application, based on the foregoing scheme, the local oscillator power divider, the digitally controlled phase shifter, the local oscillator amplifier, the mixer, and the intermediate frequency power divider are all manufactured using gallium arsenide (GaAs) technology.

[0014] In some embodiments of this application, based on the foregoing scheme, the W-band driver amplifier and the W-band final stage power amplifier are fabricated using gallium nitride technology.

[0015] In some embodiments of this application, based on the foregoing scheme, the W-band ceramic probe is made using a low-temperature co-fired ceramic process or a thin-film ceramic process.

[0016] According to a second aspect of the embodiments of this application, an application encapsulation structure is provided, including: A package body, wherein a metal cavity is provided on the package body, and a circuit structure as described in the first aspect is provided in the metal cavity; The package body is also provided with an RF connector and a waveguide port; The radio frequency connector is connected to the local oscillator power divider; The waveguide port is connected to the W-band power combining network.

[0017] In some embodiments of this application, based on the foregoing scheme, the front of the encapsulation body is provided with a top cover plate and the back is provided with a back cover plate.

[0018] The technical solution of this application has the following beneficial effects: 1. This invention can significantly improve the power combining efficiency of the W-band.

[0019] 2. The circuit of this invention is applicable to power synthesis at any frequency point within the W frequency band.

[0020] 3. The circuit of this invention does not require adjustment of the hardware circuit; the power combining efficiency can be improved by externally controlling the numerically controlled phase shifter.

[0021] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0022] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings: Figure 1A front view of a circuit structure for improving the debugging efficiency of W-band power combining, according to an embodiment of this application, is shown. Figure 2 A rear view of a circuit structure for improving the debugging efficiency of W-band power combining, according to an embodiment of this application, is shown. Figure 3 A top cross-sectional view of an application packaging structure according to an embodiment of this application is shown; Figure 4 A back cross-sectional view of an application package structure according to an embodiment of this application is shown; Figure 5 A schematic diagram of an application encapsulation structure according to an embodiment of this application is shown.

[0023] Explanation of reference numerals in the attached figures 1-A circuit structure for improving the debugging efficiency of W-band power combining; 11-Local oscillator power divider; 12-Digitally controlled phase shifter; 13-Local oscillator amplifier; 14-Mixer; 15-Glass bead; 16-W-band driver amplifier; 17-W-band final stage power amplifier; 18-W-band ceramic probe; 19-W-band power combining network; 10-Intermediate frequency power divider; 2-Microstrip line; 3-Metal cavity; 4-Top cover; 5-Back cover; 6-RF connector; 7-Waveguide port. Detailed Implementation

[0024] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0025] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0026] It should be noted that "multiple" as mentioned in this article refers to two or more.

[0027] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0028] The following detailed description of some embodiments of this application will be provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0029] To address the technical problems existing in the prior art, embodiments of this application provide a circuit structure for improving the debugging efficiency of W-band power combining, including: The structural body is provided with a local oscillator power divider, a multi-channel phase-shifting amplifier circuit, a multi-channel mixer circuit, a multi-channel W-band amplifier circuit, and a W-band power combining network; The local oscillator power divider is connected to each phase-shifting amplifier circuit, and divides the externally input local oscillator signal into multiple radio frequency signals and transmits them to each phase-shifting amplifier circuit. Each phase-shifting amplifier circuit is connected to a mixer circuit, and each mixer circuit is connected to a W-band amplifier circuit. The mixer circuit receives an intermediate frequency signal, mixes the intermediate frequency signal with the radio frequency signal transmitted from the phase-shifting amplifier circuit to obtain a W-band radio frequency signal, and transmits it to the W-band amplifier circuit. Each W-band amplifier circuit is connected to the W-band power combining network, amplifying each W-band RF signal before transmitting it to the W-band power combining network for combining and output.

[0030] In some feasible embodiments, based on the foregoing scheme, the phase-shifting amplifier circuit includes: a digitally controlled phase shifter and a local oscillator amplifier; The receiving end of the numerically controlled phase shifter is connected to the local oscillator power divider, and the output end is connected to the local oscillator amplifier; The output of the local oscillator amplifier is connected to the mixer circuit.

[0031] In some feasible embodiments, based on the foregoing scheme, the circuit structure further includes: an intermediate frequency signal transmission circuit; The intermediate frequency signal transmission circuit includes: an intermediate frequency power divider and multiple glass beads; The intermediate frequency power divider is connected to each glass bead, and divides the intermediate frequency signal into multiple intermediate frequency signals for transmission to each glass bead. Each glass bead is connected to a corresponding mixer circuit.

[0032] In some feasible embodiments, based on the foregoing scheme, the mixing circuit includes: a mixer; The mixer's first input terminal is connected to the local oscillator amplifier, its second input terminal is connected to a glass bead, and its output terminal is connected to the W-band amplifier circuit.

[0033] In some feasible embodiments, based on the foregoing scheme, the W-band amplifier circuit includes: a W-band driver amplifier, a W-band final stage power amplifier, and a W-band ceramic probe; The input terminal of the W-band driver amplifier is connected to the mixer, and the output terminal is connected to the W-band final stage power amplifier. The output of the final stage power amplifier in the W band is connected to the W band ceramic probe. The output of the W-band ceramic probe is connected to the W-band power combining network.

[0034] It should be noted that, in the embodiments of this application, the local oscillator power divider is made using gallium arsenide technology and is used to divide the power of the local oscillator signal into multiple paths, such as four paths. In this embodiment, there are correspondingly four phase-shifting amplifier circuits, four mixing circuits, and four W-band amplifier circuits.

[0035] The common port of the local oscillator power divider receives the local oscillator signal. There are four local oscillator power divider ports, which are connected to four phase-shifting amplifier circuits respectively. The amplitude of the power divider port is one-quarter of the amplitude of the signal at the common port.

[0036] It should be noted that, in the embodiments of this application, the numerically controlled phase shifter is manufactured using gallium arsenide (GaAs) technology and is used to change the phase of the radio frequency (RF) local oscillator signal. Internally, multiple sets of switches are used to switch the path of the RF link. The path length is equivalent to the electrical length. According to transmission line theory, the electrical length and the phase delay of the signal are linearly related. By using different switch control combinations, different paths are selected, thereby achieving phase control of the signal. The input terminal of the numerically controlled phase shifter is connected to the output terminal of the local oscillator amplifier, and the output terminal of the numerically controlled phase shifter is connected to the input terminal of the local oscillator amplifier. The switch control terminal of the numerically controlled phase shifter is connected to an external control line.

[0037] It should be noted that, in the embodiments of this application, the local oscillator amplifier is manufactured using gallium arsenide technology and is used to amplify the local oscillator signal input to the mixer. The local oscillator port signal of the mixer needs to reach a certain amplitude to drive the nonlinear components inside the mixer into a fully switched state. The saturated output power parameter of the local oscillator amplifier is greater than the amplitude requirement of the local oscillator port of the mixer, which enables the mixer to work normally. The input terminal of the local oscillator amplifier is connected to the output terminal of the digitally controlled phase shifter, and the output port of the local oscillator amplifier is connected to the mixer.

[0038] It should be noted that, in the embodiments of this application, the mixer uses gallium arsenide technology to achieve mixing of intermediate frequency (IF) signal and local oscillator (LO) signal. The mixer is a nonlinear device, which essentially changes the operating point of the nonlinear device periodically with the LO signal. The IF signal passes through this periodically modulated link, and the result is equivalent to a multiplication operation between the two, generating frequency components. In the embodiments of this application, the IF signal frequency and the LO signal frequency are added to obtain the W-band signal, which is ultimately sent to the transmitting antenna. The mixer is a three-port device, with the LO port connected to the output port of the LO amplifier, the IF port connected to the glass bead, and the RF port connected to the W-band driver amplifier.

[0039] It should be noted that, in the embodiments of this application, the glass bead is used to realize the vertical interconnection of radio frequency signals of different layers. The local oscillator port and the intermediate frequency port of the mixer cannot achieve power division on the same layer. Therefore, one of the ports needs to be placed on the lower layer and the glass bead is installed vertically. The two layers of radio frequency signals can be interconnected, and the radio frequency loss is small. The length of the glass bead can be modified according to the thickness of the two layers. One end of the glass bead is connected to the intermediate frequency port of the mixer, and the other end is connected to the power division port of the intermediate frequency power divider.

[0040] It should be noted that in the embodiments of this application, the intermediate frequency power divider adopts gallium arsenide technology, and its working principle is the same as that of the local oscillator power divider, which will not be described again; the common port of the intermediate frequency power divider receives the intermediate frequency signal, and the power dividing port of the intermediate frequency power divider is connected to the glass bead.

[0041] It should be noted that, in the embodiments of this application, the W-band driver amplifier is constructed using gallium nitride (GaN) technology to amplify the W-band radio frequency signal output from the mixer. Unlike gallium arsenide (GaAs) technology, GaN amplifiers have a wider operating frequency band and higher output saturation power to drive the final stage power amplifier of the W-band.

[0042] It should be noted that, in the embodiments of this application, the W-band final stage power amplifier is made of gallium nitride and is used to amplify the radio frequency signal output by the W-band driver amplifier; as the last stage of the active radio frequency circuit, the final output radio frequency power is the maximum power that the power device of the active radio frequency circuit can achieve; the input terminal of the W-band final stage amplifier is connected to the W-band driver amplifier, and the output terminal is connected to the W-band ceramic probe.

[0043] It should be noted that, in the embodiments of this application, the W-band ceramic probe is made using a low-temperature co-fired ceramic process or a thin-film ceramic process, and its upper surface is a signal line generated by a sputtering process to realize the conversion from a coaxial transmission line to a metal waveguide; the input end of the W-band ceramic probe is connected to the final stage power amplifier of the W-band, and the output end is connected to the sub-port of the W-band power combining network.

[0044] It should be noted that, in the embodiments of this application, the W-band power combining network uses a metal waveguide fabrication process to combine four W-band radio frequency signals and finally output them to the waveguide port. When a single power device cannot provide higher output power due to its own limitations, a power combining network can be used to combine multiple radio frequency signals. When the amplitude and phase of the multiple radio frequency signals are consistent, the power combining network has the highest combining efficiency and the largest combined power amplitude. The splitting port of the W-band power combining network is connected to the waveguide probe, and the combining port is the waveguide output port.

[0045] The signal processing procedure for this circuit structure is as follows: The local oscillator signal passes through a local oscillator power divider, a digitally controlled phase shifter, and a local oscillator amplifier before reaching the local oscillator port of the mixer. The intermediate frequency (IF) signal passes through an IF power divider and a glass bead before reaching the IF port of the mixer. The mixer up-converts the IF and local oscillator signals to the W-band radio frequency (RF) signal. The W-band RF signal output by the mixer passes through a W-band driver amplifier and a W-band final stage power amplifier before reaching the W-band power combining network.

[0046] The intermediate frequency signal and the local oscillator signal can be represented by the following formulas: Intermediate frequency signal:

[0047] Local oscillator signal:

[0048] Based on the working principle of a mixer, multiplying the intermediate frequency signal and the local oscillator signal yields the output radio frequency signal:

[0049] According to the trigonometric identities, the radio frequency signal can be obtained:

[0050] The RF signal output by the mixer has a high-frequency signal component. ) and low-frequency signal components ( The driver amplifier after the mixer has a certain bandwidth, which can filter out low-frequency signal components and amplify only the high-frequency signal components. Therefore, the final RF signal only contains high-frequency signal components.

[0051] The initial phase of a radio frequency signal can be expressed by the following formula:

[0052] The initial phase of the radio frequency (RF) signal is related to the initial phases of the intermediate frequency (IF) signal and the local oscillator (LO) signal, and the relationship is linear. Changing any phase of the IF or LO signal will change the phase of the RF signal. The amplitude of the LO signal in the mixer needs to be sufficient to bring the mixer into the saturation switching region so that the mixing loss of the mixer can be stabilized at a fixed value. The amplitude of the IF signal directly affects the amplitude of the RF signal after mixing. However, the insertion loss of the digitally controlled phase shifter that adjusts the phase is large. Therefore, placing the digitally controlled phase shifter at the LO signal port and then amplifying the LO signal to saturation through the LO amplifier allows the mixer to work normally.

[0053] The principle of power combining is to add multiple radio frequency signals together to obtain a combined signal. The principle is as follows:

[0054] According to the trigonometric function formulas, the signal amplitude and synthesis efficiency of the synthesized signal are:

[0055]

[0056] when , That is, when the amplitude and phase of multiple signals are consistent, the signal amplitude Maximum, synthesis efficiency It is also the largest. By adjusting the phase switch of the digitally controlled phase shifter at the local oscillator end, the phase of the RF link can be adjusted. When the phases of the four RF links are consistent, the combining efficiency of the W-band power combining network is the highest, and the output RF signal power is the largest.

[0057] By adjusting the frequency of the local oscillator (LO) signal while keeping the intermediate frequency (IF) constant at any desired frequency point in the W-band, and simultaneously inputting both the IF and LO signals, the phase switch of the digitally controlled phase shifter can be adjusted to achieve power combining of four W-band signals. Recording the phase shift state of the LO signal's digitally controlled phase shifter at any frequency point allows the power combining efficiency of the W-band to be maximized at any frequency. The entire device does not significantly increase the system's complexity, and the combining efficiency is significantly improved.

[0058] For example, see Figure 1 The image shows a front view of a circuit structure for improving the debugging efficiency of W-band power combining according to an embodiment of this application.

[0059] See Figure 2 The diagram shows a rear view of a circuit structure for improving the debugging efficiency of W-band power combining according to an embodiment of this application.

[0060] like Figure 1As shown, the circuit structure for improving the power combining and debugging efficiency of the present invention includes a local oscillator power divider 11, a digitally controlled phase shifter 12, a local oscillator amplifier 13, a mixer 14, a glass bead 15, a W-band driver amplifier 16, a W-band final stage power amplifier 17, a W-band ceramic probe 18, and a W-band power combining network 19.

[0061] like Figure 2 As shown, the circuit structure for improving power synthesis and debugging efficiency of the present invention also includes an intermediate frequency power divider 10 and a glass bead 15.

[0062] The intermediate frequency (IF) signal is divided into four paths by the IF power divider 10, and then transmitted to the IF terminal of the mixer 14 via the glass bead 15. The local oscillator (LO) signal is divided into four paths by the LO power divider 11 and input to the digitally controlled phase shifter 12, and then output to the LO amplifier 13. The LO signal of each path is amplified to an amplitude level sufficient to drive the mixer 14. After mixing with the IF signal, four W-band radio frequency (RF) signals are obtained and output to the W-band driver amplifier 16. The RF signal of each path is amplified to an amplitude level sufficient to drive the W-band final stage power amplifier 17. The W-band final stage power amplifier 17 outputs a saturated power signal, which is bonded to the microstrip input terminal of the W-band ceramic probe 18 via gold wire. The RF signal propagates to the probe end of the W-band ceramic probe 18 in the form of electromagnetic waves (TEM mode). The probe end acts as an asymmetric monopole antenna and radiates to the metal W-band power combining network 19. After the four W-band RF signals are combined, a greater RF signal power can be obtained. By adjusting the phase of the four-channel digitally controlled phase shifter 12, the phase of the four local oscillator signals is changed, thereby changing the phase of the four W-band RF signals, so that the four phases are consistent, the synthesized W-band RF signal can reach its maximum value, and the synthesis efficiency is also maximized.

[0063] Based on the same inventive concept, embodiments of this application also provide an application encapsulation structure, including: The package body has a metal cavity, and the metal cavity has a circuit structure as described in any of the above embodiments. The package body is also provided with an RF connector and a waveguide port; The radio frequency connector is connected to the local oscillator power divider; The waveguide port is connected to the W-band power combining network.

[0064] In some feasible embodiments, based on the aforementioned scheme, the front of the encapsulation body is provided with a top cover plate, and the back is provided with a back cover plate.

[0065] For example, see Figure 3 The image shows a top cross-sectional view of an application encapsulation structure according to an embodiment of this application.

[0066] See Figure 4 The image shows a back cross-sectional view of an application packaging structure according to an embodiment of this application.

[0067] like Figure 3 As shown, a metal cavity 3 is formed on the package body, and a circuit structure 1 for improving the power combining and debugging efficiency of the W-band is set in this metal cavity 3, specifically as follows: The local oscillator power divider 11, digitally controlled phase shifter 12, local oscillator amplifier 13, mixer 14, glass bead 15, W-band driver amplifier 16, W-band final stage power amplifier 17, W-band ceramic probe 18, and W-band power combining network 19 are all deployed on the metal cavity 3, and the various devices are interconnected by microstrip lines 2 and gold wire bonding.

[0068] The RF connector 6 is connected to the local oscillator power divider 11 to provide RF signals; the waveguide port 7 is connected to the W-band power combining network 19 to output the combined W-band RF signal.

[0069] like Figure 4 As shown, the intermediate frequency power divider 10 is also deployed on the metal cavity 3 and interconnected with the mixer 14 inside the metal cavity 3 through the glass bead 15.

[0070] See Figure 5 The diagram shows a schematic representation of an application encapsulation structure according to an embodiment of this application.

[0071] like Figure 5 As shown, the front of the package body is provided with a top cover plate 4, and the back is provided with a back cover plate 5.

[0072] In summary, the circuit structure for improving power combining efficiency provided in this application can effectively enhance the power combining efficiency of W-band circuits. Under the same scenario, the space occupied by this circuit structure for improving power combining efficiency does not increase significantly, and the overall circuit complexity does not increase significantly either.

[0073] Other embodiments of this application will readily conceive of by those skilled in the art upon consideration of the specification and practice of the embodiments disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. It should be understood that this application is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A circuit structure for improving the debugging efficiency of W-band power combining, characterized in that, include: The structural body is provided with a local oscillator power divider, a multi-channel phase-shifting amplifier circuit, a multi-channel mixer circuit, a multi-channel W-band amplifier circuit, and a W-band power combining network; The local oscillator power divider is connected to each phase-shifting amplifier circuit, and divides the externally input local oscillator signal into multiple radio frequency signals and transmits them to each phase-shifting amplifier circuit. Each phase-shifting amplifier circuit is connected to a mixer circuit, and each mixer circuit is connected to a W-band amplifier circuit. The mixer circuit receives an intermediate frequency signal, mixes the intermediate frequency signal with the radio frequency signal transmitted from the phase-shifting amplifier circuit to obtain a W-band radio frequency signal, and transmits it to the W-band amplifier circuit. Each W-band amplifier circuit is connected to the W-band power combining network, amplifying each W-band RF signal before transmitting it to the W-band power combining network for combining and output.

2. The circuit structure according to claim 1, characterized in that, The phase-shifting amplifier circuit includes: a digitally controlled phase shifter and a local oscillator amplifier; The receiving end of the numerically controlled phase shifter is connected to the local oscillator power divider, and the output end is connected to the local oscillator amplifier; The output of the local oscillator amplifier is connected to the mixer circuit.

3. The circuit structure according to claim 2, characterized in that, The circuit structure also includes: an intermediate frequency signal transmission circuit; The intermediate frequency signal transmission circuit includes: an intermediate frequency power divider and multiple glass beads; The intermediate frequency power divider is connected to each glass bead, and divides the intermediate frequency signal into multiple intermediate frequency signals for transmission to each glass bead. Each glass bead is connected to a corresponding mixer circuit.

4. The circuit structure according to claim 3, characterized in that, The mixing circuit includes: a mixer; The mixer's first input terminal is connected to the local oscillator amplifier, its second input terminal is connected to a glass bead, and its output terminal is connected to the W-band amplifier circuit.

5. The circuit structure according to claim 4, characterized in that, The W-band amplifier circuit includes: a W-band driver amplifier, a W-band final stage power amplifier, and a W-band ceramic probe; The input terminal of the W-band driver amplifier is connected to the mixer, and the output terminal is connected to the W-band final stage power amplifier. The output of the final stage power amplifier in the W band is connected to the W band ceramic probe. The output of the W-band ceramic probe is connected to the W-band power combining network.

6. The circuit structure according to claim 5, characterized in that, The local oscillator power divider, the digitally controlled phase shifter, the local oscillator amplifier, the mixer, and the intermediate frequency power divider are all manufactured using gallium arsenide (GaAs) technology.

7. The circuit structure according to claim 5, characterized in that, The W-band driver amplifier and the W-band final stage power amplifier are manufactured using gallium nitride (GaN) technology.

8. The circuit structure according to claim 5, characterized in that, The W-band ceramic probe is manufactured using a low-temperature co-fired ceramic process or a thin-film ceramic process.

9. An application packaging structure, characterized in that, include: A package body, wherein a metal cavity is provided on the package body, and a circuit structure as described in any one of claims 1-8 is provided in the metal cavity; The package body is also provided with an RF connector and a waveguide port; The radio frequency connector is connected to the local oscillator power divider; The waveguide port is connected to the W-band power combining network.

10. The application packaging structure according to claim 9, characterized in that, The front of the encapsulation body is provided with a top cover plate, and the back is provided with a back cover plate.

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