Semiconductor device

Abstract

A semiconductor device includes a resistive element, a main transistor, a sub-transistor, and a two-dimensional electron gas. The main transistor may include a main channel layer, a barrier layer having a different energy band gap than the main channel layer, and a main gate electrode on the barrier layer. The main source electrode and the main drain electrode are located on opposite sides of the main gate electrode and are electrically connected to the main channel layer. The sub-transistor may include a sub-channel layer positioned spaced apart from the main channel layer, a sub-gate electrode electrically connected to the main source electrode, and a sub-source electrode and a sub-drain electrode on the sub-channel layer on opposite sides of the sub-gate electrode, the sub-source electrode electrically connected to the main gate electrode. The resistive element electrically interconnects one of the main gate electrode and the sub-source electrode with one of the main source electrode and the sub-gate electrode.

Description

Technical Field

[0001] This disclosure relates to semiconductor devices. Background Technology

[0002] Power semiconductor devices are widely used in various fields, such as transportation (e.g., electric vehicles, railways, and electric trams), renewable energy systems (e.g., solar power and wind power), and mobile devices. Power semiconductor devices are designed to handle high voltages or high currents and perform functions such as power conversion and control in high-power systems or high-output electronic devices. Power semiconductor devices have the ability and durability to handle high power, so they can handle large amounts of current and withstand high voltages. For example, power semiconductor devices can handle voltages from hundreds to thousands of volts and currents from tens to thousands of amperes. Power semiconductor devices can improve the efficiency of electrical energy by minimizing power losses. Furthermore, power semiconductor devices can operate stably even in environments such as high temperatures. Summary of the Invention

[0003] This disclosure attempts to provide a semiconductor device with stable electrical characteristics and improved reliability.

[0004] A semiconductor device includes a main transistor, a sub-transistor, and a resistive element including a drift resistance region. The main transistor may include a main channel layer, a barrier layer on the main channel layer including a material having a different band gap than the main channel layer, a main gate electrode on the barrier layer, a main gate semiconductor layer between the barrier layer and the main gate electrode, and a main source electrode and a main drain electrode located on opposite sides of the main gate electrode and electrically connected to the main channel layer. The sub-transistor may include a sub-channel layer spaced apart from the main channel layer, a sub-gate electrode on the sub-channel layer and electrically connected to the main source electrode, and sub-source electrodes and sub-drain electrodes located on opposite sides of the sub-gate electrode on the sub-channel layer, the sub-source electrode being electrically connected to the main gate electrode. The resistive element electrically interconnects either the main gate electrode or the sub-source electrode with either the main source electrode or the sub-gate electrode.

[0005] A semiconductor device includes a main transistor, a sub-transistor, and a resistive element. The main transistor may include a main channel layer, a barrier layer on the main channel layer and including a material having a different band gap than the main channel layer, a main gate electrode on the barrier layer, a main gate semiconductor layer between the barrier layer and the main gate electrode, and a main source electrode and a main drain electrode located on opposite sides of the main gate electrode and electrically connected to the main channel layer. The sub-transistor may include a sub-channel layer spaced apart from the main channel layer and including the same material as the main channel layer, a sub-gate electrode on the sub-channel layer and electrically connected to the main source electrode, and sub-source electrodes and sub-drain electrodes located on opposite sides of the sub-gate electrode on the sub-channel layer, the sub-source electrodes being electrically connected to the main gate electrode. The resistive element includes a channel pattern and a second barrier layer. The channel pattern includes a drift resistance region having a two-dimensional electron gas and including the same material as the main channel layer. The second barrier layer is located on the channel pattern. The resistive element electrically interconnects either the main gate electrode or the sub-source electrode with either the main source electrode or the sub-gate electrode.

[0006] A semiconductor device includes a main transistor, a sub-transistor, and a resistive element. The main transistor may include a main channel layer comprising GaN, a barrier layer comprising AlGaN on the main channel layer, a main gate electrode on the barrier layer, a main gate semiconductor layer comprising GaN doped with p-type impurities located between the barrier layer and the main gate electrode, and a main source electrode and a main drain electrode located on opposite sides of the main gate electrode and electrically connected to the main channel layer. The sub-transistor may include a sub-channel layer comprising GaN spaced apart from the main channel layer, a sub-gate electrode located on the sub-channel layer and electrically connected to the main source electrode, and a sub-source electrode and a sub-drain electrode located on opposite sides of the sub-gate electrode on the sub-channel layer. The sub-source electrode is electrically connected to the main gate electrode. The resistive element may include a first channel pattern comprising GaN located between the sub-source electrode and the main source electrode, and a first barrier layer comprising AlGaN located on the first channel pattern. A first side of the first channel pattern is electrically contacted with the sub-source electrode, and a second side is electrically contacted with the main source electrode.

[0007] Depending on the implementation method, the electrical characteristics and reliability of semiconductor devices can be improved. Attached Figure Description

[0008] Figure 1 and Figure 2 This is a circuit diagram showing a semiconductor device according to some implementation methods.

[0009] Figure 3 This is a top plan view showing a semiconductor device according to some implementation methods.

[0010] Figure 4 and Figure 5 It is along Figure 3 A sectional view taken by line A-A'.

[0011] Figure 6 yes Figure 3 An enlarged top view of the SR1 region.

[0012] Figure 7 It is along Figure 6 The sectional view taken by line B-B'.

[0013] Figure 8 It is along Figure 6 A sectional view taken by line C-C'.

[0014] Figures 9 to 11 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations.

[0015] Figure 12 It is along Figure 11 A sectional view taken by line D-D'.

[0016] Figure 13 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations.

[0017] Figure 14 It is along Figure 13 A sectional view taken from line E-E'.

[0018] Figure 15 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations.

[0019] Figure 16 It is along Figure 15 The sectional view taken by line F-F'.

[0020] Figure 17 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations.

[0021] Figure 18 It is along Figure 17 A cross-sectional view taken by line G-G'.

[0022] Figure 19 It corresponds to Figure 6 A cross-sectional view along line C-C', which shows a semiconductor device according to some implementation.

[0023] Figure 20 This is a circuit diagram showing a semiconductor device according to some implementation methods. Detailed Implementation

[0024] The present disclosure will be described more fully below with reference to the accompanying drawings, which illustrate implementations of the present disclosure. As those skilled in the art will recognize, the described implementations can be modified in various ways without departing from the spirit or scope of the present disclosure.

[0025] For clarity of description, parts or components not related to the description are omitted, and identical or similar constituent elements are indicated by the same reference numerals throughout the specification.

[0026] It will be understood that when an element (such as a layer, film, region, area, or substrate) is referred to as being "on" or "above" another element, it can be directly on the other element, or there may be an intervening element. Conversely, when an element is referred to as being "directly on" another element, there is no intervening element. Furthermore, in the specification, the terms "on" or "above" indicate that it is disposed on or below the object portion, and do not necessarily mean that it is disposed on the upper side of the object portion based on the direction of gravity.

[0027] Furthermore, throughout the instruction manual, the phrase "in plan view" or "on a plane" indicates the object portion viewed from the top, while the phrase "in section view" or "on a section" indicates the cross-section formed by vertically cutting the object portion, viewed from one side.

[0028] Power semiconductor devices can be classified by material. For example, power semiconductor devices include SiC power semiconductor devices and GaN power semiconductor devices. Power semiconductor devices using SiC or GaN can overcome the instability of silicon at high temperatures. SiC power semiconductor devices can withstand high temperatures, have low power loss, and are suitable for electric vehicles and renewable energy systems. GaN power semiconductor devices may be more expensive, but they are highly efficient in terms of speed and suitable for high-speed charging of mobile devices.

[0029] In the following text, reference will be made to Figure 1 Describe the circuit structure of a semiconductor device according to some implementation methods.

[0030] Figure 1 This is a circuit diagram showing a semiconductor device according to some implementation methods.

[0031] Reference Figure 1 The semiconductor device, depending on some implementation, may include a main transistor 100, a sub-transistor 200, and a resistive element 30.

[0032] The main transistor 100 of a semiconductor device, according to some implementations, can be a normally-off high electron mobility transistor (HEMT). However, it is not limited to this; the main transistor 100 of a semiconductor device, according to some implementations, can be a normally-on high electron mobility transistor.

[0033] In some implementations, the main transistor 100 may include a gate electrode G1, a first electrode D1, and a second electrode S1. The main transistor 100 can be adjusted according to a gate signal applied to the gate electrode G1 (e.g., the main gate voltage V). G (See Figure 2 This controls the drain-source current between the first electrode D1 and the second electrode S1. For example, when a conduction signal is applied to the gate electrode G1 of the main transistor 100, current can flow from the first electrode D1 to the second electrode S1. A first power supply voltage V can be supplied to the first electrode D1. D And a second power supply voltage V can be supplied to the second electrode S1. S Second power supply voltage V S The size can be smaller than the first power supply voltage V. D The magnitude of the voltage. For example, the second power supply voltage V. S It can be the ground voltage. Here, the first electrode D1 can represent... Figures 3 to 8 The implementation method is a 190m main drain electrode (see...) Figure 3 The second electrode S1 can represent Figures 3 to 8 The implementation method of the main source electrode is 170m (see Figure 3 In addition, the first power supply voltage V D This can indicate that the supply to the main drain electrode is 190m (see...) Figure 3 The voltage of the second power supply. S This can indicate a supply of 170m to the main source electrode (see...) Figure 3 The voltage of ).

[0034] In some implementations of the semiconductor device, the sub-transistor 200 can be a normally-on high electron mobility transistor (HEMT). In some implementations, the main transistor 100 can be a normally-off high electron mobility transistor, and the sub-transistor 200 can be a normally-on high electron mobility transistor. However, it is not limited to this; in some implementations of the semiconductor device, the sub-transistor 200 can be a normally-off high electron mobility transistor.

[0035] The sub-transistor 200 may include a gate electrode G2, a first electrode D2, and a second electrode S2. The sub-transistor 200 can control the drain-source current between the first electrode D2 and the second electrode S2 based on a signal applied to the gate electrode G2. For example, the sub-transistor 200 can adjust the main gate voltage V applied to the first electrode D2 based on the signal applied to the gate electrode G2. G It is transferred to the second electrode S2.

[0036] The sub-transistor 200 can be electrically connected to the first terminal of the main transistor 100. For example, the second electrode S2 of the sub-transistor 200 can be electrically connected to the gate electrode G1 of the main transistor 100, and the gate electrode G2 of the sub-transistor 200 can be electrically connected to the second electrode S1 of the main transistor 100. Therefore, the gate electrode G2 of the sub-transistor 200 can be electrically connected to the supply of the second power supply voltage V. S The second power source.

[0037] Sub-transistor 200 can control the main gate voltage V applied to the gate electrode G1 of main transistor 100. G Specifically, when the sub-transistor 200 is turned on, the main gate voltage V applied to the first electrode D2 of the sub-transistor 200 is... G The gate electrode G1 of the main transistor 100 can be applied through the first node N1. Furthermore, when the sub-transistor 200 is turned off, the main gate voltage V applied to the first electrode D2 of the sub-transistor 200... G The gate electrode G1 of the main transistor 100 may not be applied. (The following will refer to...) Figure 2 The detailed operation methods of the sub-transistor 200 and the main transistor 100 are described.

[0038] Here, the first electrode D2 of the sub-transistor 200 can correspond to Figures 3 to 8 The implementation method of the sub-drain electrode 190s (see Figure 3 The second electrode S2 of the sub-transistor 200 can correspond to Figures 3 to 8 The implementation method of the sub-source electrode 170s (see Figure 3 The gate electrode G2 of the sub-transistor 200 can correspond to Figures 3 to 8 The implementation method of the sub-gate electrode 155s (see Figure 3 Sub-transistor 200 can be separated by partition structure 160 (see...) Figure 3 It is separated from the main transistor 100, but is not limited thereto.

[0039] In some implementations, in addition to the sub-transistor 200, the semiconductor device may also include passive elements (such as capacitors and inductors) electrically connected to the main transistor 100 and / or the sub-transistor 200, or it may also include active elements (such as integrated circuit (IC) chips). As another example, the semiconductor device may also include shunts, voltage dividers, voltage limiters, protection devices for the main transistor 100, etc., electrically connected to the main transistor 100 and / or the sub-transistor 200.

[0040] Resistive element 30 electrically interconnects the main transistor 100 and the sub-transistor 200. The first terminal of resistive element 30 can be electrically connected to the first terminal of the main transistor 100 and the first terminal of the sub-transistor 200 via a first node N1. For example, the first terminal of resistive element 30 can be electrically connected to the gate electrode G1 of the main transistor 100 and the second electrode S2 of the sub-transistor 200 via the first node N1. Furthermore, the second terminal of resistive element 30 can be electrically connected to the second terminal of the main transistor 100 and the second terminal of the sub-transistor 200 via a second node N2. For example, the second terminal of resistive element 30 can be electrically connected to the second electrode S1 of the main transistor 100 and the gate electrode G2 of the sub-transistor 200 via the second node N2. Resistive element 30 can electrically interconnect the first node N1 and the second node N2.

[0041] Therefore, through the resistor element 30, either the gate electrode G1 of the main transistor 100 or the second electrode S2 of the sub-transistor 200 can be electrically connected to either the second electrode S1 of the main transistor 100 or the gate electrode G2 of the sub-transistor 200. For example, by according to Figures 6 to 10 The first resistive element 31 of the implementation method (see Figure 6 ),according to Figures 11 to 14 The second resistive element 32 (see implementation method) Figure 11 ),according to Figure 15 and Figure 16 The third resistor element 33 (see implementation method) Figure 15 ) and according to Figure 17 and Figure 18 The fourth resistor element 34 (see implementation method) Figure 17 In either of these, the first terminal of the main transistor 100 and the first terminal of the sub-transistor 200 can be electrically connected.

[0042] In some implementations, the resistive element 30 can be made possible by using a first channel pattern 310 (see...). Figure 7 Two-dimensional electron gas (2DEG) 134 appears at the interface between the barrier layer 136 and the barrier layer 136 (see Figure 7 This provides an electrical path. At this point, the electrical path can be provided according to the pattern 310 present in the first channel (see...). Figure 7 The two-dimensional electron gas 134 inside (see) Figure 7 The electron mobility of ( ) forms a predetermined resistance value. This will then be referenced. Figures 6 to 8 Described. In some implementations, besides those present in the first channel pattern 310 (see... Figure 7 The two-dimensional electron gas 134 inside (see) Figure 7 In addition to the contact electrodes CT1 and CT2 (see...), the resistive element 30 may also include... Figure 10 Contact resistance caused by ).

[0043] Further reference will be made below. Figure 2 Describes the operation methods of semiconductor devices based on some implementation methods.

[0044] Figure 2 This is a circuit diagram showing a semiconductor device according to some implementation methods. Figure 2 The diagram shows the current flow when the sub-transistor 200 is turned on.

[0045] Further reference Figure 2 First, in the first mode, the sub-transistor 200 can already be turned on. Therefore, the main gate voltage V applied to the first electrode D2 of the sub-transistor 200 is... G The gate electrode G1 of the main transistor 100 can be applied through the first path C1 via the second electrode S2 of the sub-transistor 200. The main transistor 100 can adjust the gate voltage V applied to the gate electrode G1 according to the main gate voltage V. G Conduction.

[0046] In some implementations, since the sub-transistor 200 is a normally-on high electron mobility transistor, in order to keep the sub-transistor 200 on, the voltage applied to the gate electrode G2 of the sub-transistor 200 may need to be greater than the sum of the voltage applied to the first electrode D2 and the threshold voltage of the sub-transistor 200. That is, the relationship of Inequality 1 below can be obtained.

[0047] (Inequality 1)

[0048] V G2 >V D2 +V sth

[0049] Here, "V" G2 "V" can represent the voltage applied to the gate electrode G2 of the sub-transistor 200. D2 "V can represent the main gate voltage V applied to the first electrode D2 of the sub-transistor 200" G “V” sth "This can represent the threshold voltage of sub-transistor 200. Therefore, in order to keep sub-transistor 200 on, the main gate voltage V applied to the first electrode D2 of sub-transistor 200 is..." G It can have the following relationship as inequality 2.

[0050] (Inequality 2)

[0051] V D2 <V G2 -V sth

[0052] That is, the sub-transistor 200 can be powered by the main gate voltage V applied to the first electrode D2 of the sub-transistor 200.G Less than the voltage V from the second power supply S It conducts within the range of the value obtained by subtracting the threshold voltage of sub-transistor 200. For example, due to the second power supply voltage V S The voltage is applied to the gate electrode G2 of the sub-transistor 200, therefore when the second power supply voltage V... S When the voltage is grounded, the sub-transistor 200 can operate at the main gate voltage V. G Less than "-V" sth It can conduct within the range of "".

[0053] Subsequently, in the second mode, the sub-transistor 200 can be turned off. Therefore, even if the main gate voltage V... G The main gate voltage V is applied to the first electrode D2 of the sub-transistor 200. G Alternatively, the signal may not be transmitted to the gate electrode G1 of the main transistor 100. In this case, since the sub-transistor 200 is a normally open high electron mobility transistor, the sub-transistor 200 can operate at the main gate voltage V. G Greater than or equal to the voltage from the second power supply V S The transistor is turned off within the range of values ​​obtained by subtracting the threshold voltage of the sub-transistor 200. For example, when the second power supply voltage V... S When the voltage is grounded, the sub-transistor 200 can operate at the main gate voltage V. G Greater than or equal to "-V" sth Shut down within the scope of "".

[0054] Therefore, due to the main gate voltage V of the sub-transistor 200 of the semiconductor device according to some implementations G Greater than or equal to "-V" sth It can be turned off within the range of "", thus preventing the main gate voltage V G The signal is transmitted to the gate electrode G1 of the main transistor 100, thereby protecting the main transistor 100.

[0055] Furthermore, due to leakage current and parasitic capacitance in the sub-transistor 200, charge may accumulate in the second electrode S2 of the sub-transistor 200 and the gate electrode G1 of the main transistor 100. In this case, the voltage applied to the gate electrode G1 of the main transistor 100 may increase. Since the semiconductor device according to some implementations includes a resistive element 30 between the first node N1 and the second node N2, the charge accumulated in the second electrode S2 of the sub-transistor 200 and the gate electrode G1 of the main transistor 100 can be released to the second electrode S1 of the main transistor 100 through the second path C2. Therefore, the semiconductor device according to some implementations can be protected, and reliability can be improved.

[0056] In the following text, reference will be made to Figures 3 to 5Describes semiconductor devices based on some implementation methods.

[0057] Figure 3 This is a top plan view showing a semiconductor device according to some implementation methods. Figure 4 and Figure 5 It is along Figure 3 A sectional view taken by line A-A'. Figure 4 The behavior depends on the state in which the semiconductor device is in the off state, depending on the implementation method. Figure 5 The behavior depends on the state in which the semiconductor device is in the on state, depending on the implementation method.

[0058] Reference Figures 3 to 5 A semiconductor device, according to some implementations, may include a main device region MA and a peripheral circuit region PA. The peripheral circuit region PA may be positioned adjacent to the main device region MA. For example, the peripheral circuit region PA may be positioned adjacent to the main device region MA in a second direction (Y direction), but is not limited thereto. As another example, the peripheral circuit region PA may be positioned adjacent to the main device region MA in a first direction (X direction), or may surround a side surface of the main device region MA. Various other modifications are possible. The main transistor 100 may be located within the main device region MA, and the sub-transistor 200 and resistive element 30 electrically connected to a first terminal of the main transistor 100 may be located within the peripheral circuit region PA. For example, as... Figure 3 As shown, the sub-transistor 200 can be located in the first peripheral circuit region PA1, and the first resistive element 31 can be located in the second peripheral circuit region PA2.

[0059] Figure 3 The diagram shows the second peripheral circuit region PA2 located between the main device region MA and the first peripheral circuit region PA1, but the implementation is not limited to this. The arrangement of the second peripheral circuit region PA2 and the first peripheral circuit region PA1 can be changed in various ways.

[0060] In some implementations, the channel layer, gate electrode, source electrode, and drain electrode can be located in the main device region MA and the peripheral circuit region PA. In the following text, for better understanding and ease of description, the channel layer portion located in the main device region MA can be referred to as the main channel layer 132m, and the channel layer portion located in the peripheral circuit region PA can be referred to as the sub-channel layer 132s. Furthermore, the portion of the gate electrode 155 (including 155m and 155s) located in the main device region MA can be referred to as the main gate electrode 155m, and the portion of the gate electrode 155 located in the peripheral circuit region PA can be referred to as the sub-gate electrode 155s.

[0061] The following text will describe the main transistor of a semiconductor device according to some implementation methods.

[0062] According to some implementations, the main transistor 100 of a semiconductor device may include a main channel layer 132m, a barrier layer 136 on the main channel layer 132m, a main gate electrode 155m on the barrier layer 136, a main gate semiconductor layer 152m between the barrier layer 136 and the main gate electrode 155m, and a main source electrode 170m and a main drain electrode 190m located on opposite sides of the main gate electrode 155m and connected to the main channel layer 132m.

[0063] The main channel layer 132m is the layer that forms the channel between the main source electrode 170m and the main drain electrode 190m. A two-dimensional electron gas (2DEG) 134 can be located inside the main channel layer 132m. The 2DEG 134 (which is a charge transport model used in solid-state physics) can represent a group of electrons that move freely in two-dimensional space (e.g., the XY plane) but cannot move in another dimension (e.g., the Z direction), so that they can be strictly confined to two-dimensional space. That is, the 2DEG 134 can exist in three-dimensional space as a two-dimensional sheet. In semiconductor devices according to some implementations, the 2DEG 134 mainly appears in the semiconductor heterojunction structure and can appear at the interface between the main channel layer 132m and the barrier layer 136. For example, the 2DEG 134 can appear in the portion of the main channel layer 132m adjacent to the barrier layer 136.

[0064] The main channel layer 132m may comprise one or more materials selected from group III-V materials (e.g., nitrides comprising Al, Ga, In, B, or combinations thereof). The main channel layer 132m may be formed as a single layer or multiple layers. The main channel layer 132m may be Al... x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the main channel layer 132m may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or combinations thereof. The main channel layer 132m may be a doped layer or an undoped layer. The thickness of the main channel layer 132m may be approximately several hundred nm or less.

[0065] The main channel layer 132m can be located on the substrate 110, and the seed layer 121 and the buffer layer 120 can be located between the substrate 110 and the main channel layer 132m. The substrate 110, the seed layer 121, and the buffer layer 120 are layers required to form the main channel layer 132m, and can be omitted in some cases. For example, when a GaN substrate is used as the main channel layer 132m, at least one of the substrate 110, the seed layer 121, and the buffer layer 120 can be omitted. Considering that GaN substrates are relatively expensive, the main channel layer 132m including GaN can be grown using a Si substrate 110. In this case, since the lattice structure of Si is different from that of GaN, it may not be easy to directly grow the main channel layer 132m on the substrate 110. Therefore, the seed layer 121 and the buffer layer 120 can be grown on the substrate 110 first, and then the main channel layer 132m can be grown on the buffer layer 120. Furthermore, at least one of the substrate 110, seed layer 121, and buffer layer 120 can be used in the manufacturing process and then removed in the final structure of the semiconductor device.

[0066] Substrate 110 may include a semiconductor material. For example, substrate 110 may include Si, SiC, AlN, GaN, or combinations thereof. Substrate 110 may be a silicon-on-insulator (SOI) substrate. However, the material of substrate 110 is not limited to this, and any commonly used substrate can be used. In some cases, substrate 110 may include an insulating material, such as sapphire. For example, various layers including a main channel layer 132m may be formed on the semiconductor substrate first, and then the semiconductor substrate may be removed to be replaced with an insulating substrate.

[0067] The seed layer 121 can be directly located on the substrate 110. However, it is not limited to this; another predetermined layer can be further located between the substrate 110 and the seed layer 121. The seed layer 121 is a layer that serves as a seed for the growth buffer layer 120, and it can be formed by the lattice structure of the seed that serves as the buffer layer 120. The buffer layer 120 can be directly located on the seed layer 121. However, it is not limited to this; another predetermined layer can be further located between the seed layer 121 and the buffer layer 120. The seed layer 121 can include one or more materials selected from III-V group materials (e.g., nitrides including Al, Ga, In, B, or combinations thereof). The seed layer 121 can be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the seed layer 121 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or combinations thereof.

[0068] Buffer layer 120 may be located on seed layer 121. Buffer layer 120 may be located between seed layer 121 and main channel layer 132m. Buffer layer 120 may be a layer used to mitigate the difference in lattice constant and coefficient of thermal expansion between seed layer 121 and main channel layer 132m, or to prevent parasitic current (leakage current) from flowing through main channel layer 132m. Buffer layer 120 may include one or more materials selected from group III-V materials (e.g., nitrides including Al, Ga, In, B, or combinations thereof). Buffer layer 120 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, buffer layer 120 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or combinations thereof.

[0069] According to some implementations, the buffer layer 120 of the semiconductor device may include a superlattice layer 124 located on a seed layer 121 and a high-resistivity layer 126 located on the superlattice layer 124. The superlattice layer 124 and the high-resistivity layer 126 may be sequentially located on the substrate 110.

[0070] A superlattice layer 124 may be located on the seed layer 121. The superlattice layer 124 may be located directly on the seed layer 121. However, it is not limited to this; another predetermined layer may be further located between the seed layer 121 and the superlattice layer 124. The superlattice layer 124 may be a layer used to mitigate the difference in lattice constant and coefficient of thermal expansion between the substrate 110 and the main channel layer 132m (thus mitigating tensile and compressive stresses occurring between the substrate 110 and the main channel layer 132m) and to mitigate stresses between all layers formed by growth in the final structure of a semiconductor device according to some implementations. The superlattice layer 124 may include one or more materials selected from group III-V materials (e.g., nitrides including Al, Ga, In, B, or combinations thereof). The superlattice layer 124 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the superlattice layer 124 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or combinations thereof.

[0071] In some implementations, the superlattice layer 124 can be formed of multiple layers, wherein layers comprising different materials are alternately stacked. For example, the superlattice layer 124 can have a structure in which layers formed of AlGaN and layers formed of AlN are repeatedly stacked. That is, a superlattice layer in which AlGaN / AlN / AlGaN / AlGaN / AlN are stacked sequentially can be formed. The number of AlGaN and AlN layers configuring the superlattice layer 124 can be varied in various ways, and the material configuring the superlattice layer 124 can be varied in various ways. As another example, the superlattice layer 124 can have a structure in which layers formed of AlGaN and layers formed of GaN are repeatedly stacked. That is, AlGaN / GaN / AlGaN / GaN / AlGaN / GaN can be stacked sequentially to form a superlattice layer. In some implementations, when the superlattice layer 124 includes GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN or combinations thereof, the superlattice layer 124 can have n-type semiconductor characteristics, wherein the concentration of electrons is greater than the concentration of holes, but the implementation is not limited to this.

[0072] A high-resistivity layer 126 may be located on the superlattice layer 124. The high-resistivity layer 126 may be directly located on the superlattice layer 124. However, it is not limited to this; another predetermined layer may be further located between the superlattice layer 124 and the high-resistivity layer 126. The high-resistivity layer 126 may be located between the superlattice layer 124 and the main channel layer 132m. The high-resistivity layer 126 may be a layer used to prevent degradation of the semiconductor device according to some implementations by preventing leakage current from flowing through the main channel layer 132m. The high-resistivity layer 126 may be formed of a material with low conductivity to electrically insulate the substrate 110 and the main channel layer 132m. The high-resistivity layer 126 may include one or more materials selected from group III-V materials (e.g., nitrides including Al, Ga, In, B, or combinations thereof). The high-resistivity layer 126 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the high-resistivity layer 126 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or combinations thereof. The high-resistivity layer 126 may be formed of a single layer or multiple layers.

[0073] The semiconductor device, depending on some implementations, may also include a barrier layer 136 located on the main channel layer 132m.

[0074] The barrier layer 136 may be located on the main channel layer 132m. The barrier layer 136 may be directly located on the main channel layer 132m. However, it is not limited to this; another predetermined layer may be further located between the main channel layer 132m and the barrier layer 136. The region of the main channel layer 132m that overlaps with the barrier layer 136 between the main source electrode 170m and the main drain electrode 190m may be the main drift region DTRm. The main drift region DTRm may be located between the main source electrode 170m and the main drain electrode 190m. The main drift region DTRm can represent the region in which charge carriers move when a potential difference occurs between the main source electrode 170m and the main drain electrode 190m.

[0075] According to some implementations, the semiconductor device can be turned on and off depending on whether a voltage is applied to the main gate electrode 155m and / or the magnitude of the voltage applied to the main gate electrode 155m, so that the movement of charge carriers can be allowed or blocked in the main drift region DTRm.

[0076] The barrier layer 136 may comprise one or more materials selected from group III-V materials (e.g., nitrides comprising Al, Ga, In, B, or combinations thereof). The barrier layer 136 may be Al x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). The barrier layer 136 may include GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or combinations thereof. The band gap of the barrier layer 136 can be adjusted by the composition ratio of Al and / or In. The barrier layer 136 may be doped with predetermined impurities. In this case, the impurities doped into the barrier layer 136 may be p-type dopants capable of providing holes. For example, the impurities doped into the barrier layer 136 may be magnesium (Mg). By increasing or decreasing the impurity doping concentration of the barrier layer 136, the threshold voltage, on-resistance, etc. of the semiconductor device according to some implementations can be adjusted.

[0077] The barrier layer 136 may comprise a semiconductor material having properties different from those of the main channel layer 132m. The barrier layer 136 may differ from the main channel layer 132m in at least one aspect of polarization characteristics, band gap, and lattice constant. For example, the barrier layer 136 may comprise a material having a different band gap than the main channel layer 132m. In this case, the barrier layer 136 may have a larger band gap and a higher polarization than the main channel layer 132m. The barrier layer 136 is capable of inducing a two-dimensional electron gas 134 in the main channel layer 132m, which has a relatively low polarization. In this respect, the barrier layer 136 may be referred to as a channel supply layer or a two-dimensional electron gas supply layer. The two-dimensional electron gas 134 may be formed in the portion of the main channel layer 132m located below the interface between the main channel layer 132m and the barrier layer 136. The two-dimensional electron gas 134 may have a very high electron mobility.

[0078] The barrier layer 136 can be formed from a single layer or multiple layers. When the barrier layer 136 is formed as multiple layers, the materials of each layer can have different band gaps. In this case, the various layers of the barrier layer 136 can be configured to have larger band gaps the closer they are to the main channel layer 132m.

[0079] The main gate electrode 155m can be located on the barrier layer 136. The main gate electrode 155m can overlap a portion of the barrier layer 136 in the third direction (Z direction). The main gate electrode 155m can overlap a portion of the main drift region DTRm of the main channel layer 132m in the third direction (Z direction). The main gate electrode 155m can be located between the main source electrode 170m and the main drain electrode 190m. The main gate electrode 155m can be spaced apart from the main source electrode 170m and the main drain electrode 190m. For example, the main gate electrode 155m can be positioned closer to the main source electrode 170m than the main drain electrode 190m. That is, the spacing between the main gate electrode 155m and the main source electrode 170m can be smaller than the spacing between the main gate electrode 155m and the main drain electrode 190m, but is not limited to this. Here, the third direction (Z direction) can represent the thickness direction of the main channel layer 132m.

[0080] In some implementations, the main gate electrode 155m can be electrically connected to the sub-source electrode 170s of the sub-transistor 200. This will be discussed later in reference. Figures 6 to 8 As described in the description of the sub-transistor 200.

[0081] The main gate electrode 155m may include a conductive material. For example, the main gate electrode 155m may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, a conductive metal oxynitride, etc. For example, the main gate electrode 155m may include titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride... The metals used include, but are not limited to, tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), nickel-platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or combinations thereof. The main gate electrode 155m can be formed from a single layer or multiple layers.

[0082] In some implementations, a hard mask layer may be further included on the main gate electrode 155m. The hard mask layer may be a hard mask used during the patterning of the gate electrode material layer and / or the gate semiconductor layer during the process of forming the main gate electrode 155m. However, the hard mask layer may be removed depending on the etching conditions for etching the gate electrode material layer and / or the gate semiconductor layer, or on the cleaning conditions following etching. For example, the hard mask layer may include silicon oxide, silicon nitride, silicon oxide nitride, or a combination thereof.

[0083] The main gate semiconductor layer 152m can be located between the barrier layer 136 and the main gate electrode 155m. That is, the main gate semiconductor layer 152m can be located on the barrier layer 136, and the main gate electrode 155m can be located on the main gate semiconductor layer 152m. The main gate electrode 155m can be a Schottky contact or an ohmic contact with the main gate semiconductor layer 152m. The main gate semiconductor layer 152m can overlap with the main gate electrode 155m in the third direction (Z direction). In this case, the main gate semiconductor layer 152m can completely overlap with the main gate electrode 155m in the third direction (Z direction), and the upper surface of the main gate semiconductor layer 152m can be completely covered by the main gate electrode 155m. That is, the main gate semiconductor layer 152m can have a substantially the same planar shape as the main gate electrode 155m. However, it is not limited to this, and the main gate electrode 155m can be positioned to cover at least a portion of the main gate semiconductor layer 152m.

[0084] The main gate semiconductor layer 152m can be located between the main source electrode 170m and the main drain electrode 190m. The main gate semiconductor layer 152m can be spaced apart from the main source electrode 170m and the main drain electrode 190m. The main gate semiconductor layer 152m can be positioned closer to the main source electrode 170m than to the main drain electrode 190m. That is, the spacing between the main gate semiconductor layer 152m and the main source electrode 170m can be smaller than the spacing between the main gate semiconductor layer 152m and the main drain electrode 190m, but is not limited to this.

[0085] In some implementations, the main gate semiconductor layer 152m may overlap with the main gate electrode 155m in the third direction (Z direction). For example, the main gate semiconductor layer 152m may completely overlap with the main gate electrode 155m in the third direction (Z direction). That is, the side surface of the main gate semiconductor layer 152m may be aligned with the side surface of the main gate electrode 155m. However, it is not limited to this; the main gate semiconductor layer 152m may partially overlap with the main gate electrode 155m.

[0086] The main gate semiconductor layer 152m may comprise one or more materials selected from group III-V materials (e.g., nitrides comprising Al, Ga, In, B, or combinations thereof). The main gate semiconductor layer 152m may be Al... x In y Ga 1-x-y N (0≤x≤1, 0≤y≤1, x+y≤1). For example, the main gate semiconductor layer 152m may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or combinations thereof. The main gate semiconductor layer 152m may include a material having a different band gap than the barrier layer 136. For example, the main gate semiconductor layer 152m may include GaN, and the barrier layer 136 may include AlGaN. The main gate semiconductor layer 152m may be doped with predetermined impurities. In this case, the impurities incorporated into the main gate semiconductor layer 152m may be p-type dopants capable of providing holes. For example, the main gate semiconductor layer 152m may include GaN doped with p-type impurities. That is, the main gate semiconductor layer 152m may be formed of a p-GaN layer. However, it is not limited to this; the main gate semiconductor layer 152m may be a p-AlGaN layer.

[0087] The main depletion region DPRm can be formed within the main channel layer 132m through the main gate semiconductor layer 152m. The main depletion region DPRm can be located within the main drift region DTRm and can have a narrower width than the main drift region DTRm. When the main gate semiconductor layer 152m, having a different band gap than the barrier layer 136, is located on the barrier layer 136, the band levels of the portion of the barrier layer 136 overlapping with the main gate semiconductor layer 152m can be increased. Therefore, the main depletion region DPRm can be formed in the region of the main channel layer 132m overlapping with the main gate semiconductor layer 152m. The main depletion region DPRm can be a region in the channel path of the main channel layer 132m where the two-dimensional electron gas 134 is not formed or a region with a lower electron concentration than the other regions. That is, the main depletion region DPRm can represent the region within the main drift region DTRm where the flow of the two-dimensional electron gas 134 is interrupted. Due to the presence of the main depletion region DPRm, current can no longer flow between the main source electrode 170m and the main drain electrode 190m, and the channel path can be blocked. Therefore, semiconductor devices implemented in certain ways can exhibit normally-off characteristics.

[0088] That is, the main transistor 100 of a semiconductor device, depending on some implementation methods, can be a normally-off high electron mobility transistor (HEMT). For example... Figure 4 As shown, in the normal state where no voltage is applied to the main gate electrode 155m, the main depletion region DPRm can exist, and the main transistor 100 of the semiconductor device, according to some implementations, can be in a cutoff state. For example... Figure 5 As shown, when a threshold voltage or higher is applied to the main gate electrode 155m, the main depletion region DPRm can disappear, and the two-dimensional electron gas 134 within the main drift region DTRm can continue uninterrupted. That is, the two-dimensional electron gas 134 can be formed throughout the channel path between the main source electrode 170m and the main drain electrode 190m, and the main transistor 100 of the semiconductor device, according to some implementations, can be in a conducting state. In summary, the semiconductor device, according to some implementations, can include semiconductor layers with different polarization characteristics, and a semiconductor layer with a relatively large polarization can induce a two-dimensional electron gas 134 in another semiconductor layer forming a heterojunction with it. The two-dimensional electron gas 134 can be used as a channel between the main source electrode 170m and the main drain electrode 190m, and the continuation or interruption of the flow of the two-dimensional electron gas 134 can be controlled by applying a bias voltage to the main gate electrode 155m. In the gate-off state, the flow of the two-dimensional electron gas 134 can be blocked, and current can no longer flow between the main source electrode 170m and the main drain electrode 190m. When the gate is on, the flow of the two-dimensional electron gas 134 can continue, and the current can flow between the main source electrode 170m and the main drain electrode 190m.

[0089] The above has described a case where the main transistor 100 of a semiconductor device according to some implementations is a normally-off high electron mobility transistor, but it is not limited to this. For example, the main transistor 100 of a semiconductor device according to some implementations can be a normally-on high electron mobility transistor. In the case of a normally-on high electron mobility transistor, the main gate semiconductor layer 152m can be omitted, and therefore, the main gate electrode 155m can be directly located on the barrier layer 136. That is, the main gate electrode 155m can be in contact with the barrier layer 136. According to this structure, when no voltage is applied to the main gate electrode 155m, the two-dimensional electron gas 134 can be used as a channel, and current can flow between the main source electrode 170m and the main drain electrode 190m. Furthermore, when a negative voltage is applied to the main gate electrode 155m, a main depletion region DPRm in which the flow of the two-dimensional electron gas 134 is interrupted can be generated in the lower part of the main gate electrode 155m.

[0090] The seed layer 121, superlattice layer 124, high-resistivity layer 126, main channel layer 132m, barrier layer 136, and main gate semiconductor layer 152m described above can be stacked sequentially on the substrate 110. In some implementations of the semiconductor device, at least one of the seed layer 121, superlattice layer 124, high-resistivity layer 126, main channel layer 132m, barrier layer 136, and main gate semiconductor layer 152m can be omitted. The seed layer 121, superlattice layer 124, high-resistivity layer 126, main channel layer 132m, barrier layer 136, and main gate semiconductor layer 152m can be formed from the same base semiconductor material, and the material composition ratio of each layer can be different considering the function of each layer, the performance required by the semiconductor device, etc.

[0091] The semiconductor device, depending on some implementation, may also include a protective layer 140 located on the barrier layer 136.

[0092] A protective layer 140 may be located on the barrier layer 136 and the main gate electrode 155m. The protective layer 140 may cover the upper and side surfaces of the main gate electrode 155m and the side surface of the main gate semiconductor layer 152m. The lower surface of the protective layer 140 may contact the barrier layer 136 and the main gate electrode 155m. Therefore, the barrier layer 136, the main gate semiconductor layer 152m, and the main gate electrode 155m may be protected by the protective layer 140. However, this is not a limitation; the main gate electrode 155m may penetrate the protective layer 140 and connect to the main gate semiconductor layer 152m, and the protective layer 140 may not cover the upper surface of the main gate electrode 155m. Optionally, the lower surface of the protective layer 140 may contact the main gate semiconductor layer 152m. The protective layer 140 may include an insulating material. For example, the protective layer 140 may include oxides, such as SiO2 or Al2O3. As another example, the protective layer 140 may include nitrides (such as SiN) or oxides (such as SiON).

[0093] Figure 4 and Figure 5 The protective layer 140 is shown to be formed as a single layer, but is not limited thereto; the protective layer 140 may be formed from multiple layers including different materials.

[0094] The main source electrode 170m and the main drain electrode 190m can be located on the main channel layer 132m. The main source electrode 170m and the main drain electrode 190m can be in direct contact with the main channel layer 132m and can be electrically connected to the main channel layer 132m.

[0095] The main source electrode 170m and the main drain electrode 190m can extend in a second direction (Y direction). The main source electrode 170m and the main drain electrode 190m can be spaced apart from each other, and the main gate electrode 155m and the main gate semiconductor layer 152m can be located between the main source electrode 170m and the main drain electrode 190m. The main gate electrode 155m and the main gate semiconductor layer 152m can be spaced apart from the main source electrode 170m and the main drain electrode 190m. For example, the main source electrode 170m can be electrically connected to the main channel layer 132m on a first side of the main gate electrode 155m, and the main drain electrode 190m can be electrically connected to the main channel layer 132m on a second side of the main gate electrode 155m. The main source electrode 170m and the main drain electrode 190m can be located outside the main drift region DTRm of the main channel layer 132m. The interface between the main source electrode 170m and the main channel layer 132m can be a first edge of the main drift region DTRm. Similarly, the interface between the main drain electrode 190m and the main channel layer 132m can be the second side edge of the main drift region DTRm.

[0096] The main source electrode 170m and the main drain electrode 190m can be located within a trench that recesses the upper surface of the main channel layer 132m. Specifically, the trench penetrating the protective layer 140 and the barrier layer 136 and recessing the upper surface of the main channel layer 132m can be located on opposite sides of the main gate electrode 155m, spaced apart from each other. The main source electrode 170m and the main drain electrode 190m can be respectively positioned within the trench located on opposite sides of the main gate electrode 155m. The main source electrode 170m and the main drain electrode 190m can be formed as filling trenches. Within the trenches, the main source electrode 170m and the main drain electrode 190m can contact the main channel layer 132m and the barrier layer 136. The main channel layer 132m can form the bottom surface and part of the sidewalls of the trench, and the barrier layer 136 can form part of the sidewalls of the trench. Therefore, the main source electrode 170m and the main drain electrode 190m can contact the upper and side surfaces of the main channel layer 132m. Furthermore, the main source electrode 170m and the main drain electrode 190m can contact the side surface of the barrier layer 136. That is, the main source electrode 170m and the main drain electrode 190m can cover the side surfaces of the main channel layer 132m and the barrier layer 136. However, this is not a limitation; when the main channel layer 132m is not recessed, the main source electrode 170m and the main drain electrode 190m can contact the upper surface of the main channel layer 132m.

[0097] In some implementations, the main source electrode 170m can be electrically connected to the sub-gate electrode 155s of the sub-transistor 200. This will be discussed later in the reference section. Figures 6 to 8 As described in the description of the pair transistor 200.

[0098] In some implementations, the upper surfaces of the main source electrode 170m and the main drain electrode 190m may protrude beyond the upper surface of the protective layer 140. The main source electrode 170m and the main drain electrode 190m may cover at least a portion of the side surfaces of the protective layer 140. However, this is not a limitation; the main source electrode 170m and the main drain electrode 190m may cover at least a portion of the side surfaces of the protective layer 140 but may not cover the remaining portion of the side surfaces of the protective layer 140. In this case, the remaining portion of the protective layer 140 may be located on the upper surfaces of the main source electrode 170m and the main drain electrode 190m.

[0099] The main source electrode 170m and the main drain electrode 190m may include conductive materials. For example, the main source electrode 170m and the main drain electrode 190m may include metals, metal alloys, conductive metal nitrides, metal silicides, doped semiconductor materials, conductive metal oxides, conductive metal oxynitrides, etc. For example, the main source electrode 170m and the main drain electrode 190m may include titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlCN), titanium aluminum carbide (TiAlC), and titanium carbide (TiC). The main source electrode 170m and the main drain electrode 190m can be formed from a single layer or multiple layers. The main source electrode 170m and the main drain electrode 190m can be in ohmic contact with the main channel layer 132m. The region within the main channel layer 132m that is in contact with the main source electrode 170m and the main drain electrode 190m can be doped with a relatively high concentration compared to other regions.

[0100] Figure 4 and Figure 5 The semiconductor device shown, according to some implementations, includes a pair of main source electrodes 170m and main drain electrodes 190m, but the number of main source electrodes 170m and main drain electrodes 190m is not limited thereto. For example, the main source electrodes 170m may include a plurality of main source electrodes sequentially stacked on the main channel layer 132m in the third direction (Z direction), and the main drain electrodes 190m may include a plurality of main drain electrodes sequentially stacked on the main channel layer 132m in the third direction (Z direction).

[0101] Depending on the implementation, semiconductor devices may also include a field dispersion layer.

[0102] The field dispersion layer can be located between the main gate electrode 155m and the main drain electrode 190m. The field dispersion layer can be located between the main source electrode 170m and the main drain electrode 190m. The field dispersion layer can be located on the guard layer 140. The field dispersion layer can overlap with the main channel layer 132m in the third direction (Z direction).

[0103] The field dispersion layer may include the same material as the main source electrode 170m. The field dispersion layer may be located in at least a portion of the same layer as the main source electrode 170m. For example, the portion of the main source electrode 170m located on the protective layer 140 may be located in the same layer as the field dispersion layer. The field dispersion layer may be formed simultaneously with the main source electrode 170m in the same process. However, it is not limited to this; the field dispersion layer may be located in a different layer than the main source electrode 170m and may be formed in a different process.

[0104] A field dispersion layer can be used to disperse the electric field concentrated around the main gate electrode 155m. Specifically, in the gate-off state, the portions of the main channel layer 132m located between the main gate electrode 155m and the main source electrode 170m, and the portions of the main channel layer 132m located between the main gate electrode 155m and the main drain electrode 190m, can have a very high concentration of two-dimensional electron gas 134. In this case, the electric field can be concentrated on the main gate electrode 155m or the main gate semiconductor layer 152m. Furthermore, since the main gate electrode 155m and the main gate semiconductor layer 152m are susceptible to the influence of the electric field, leakage current may increase and the breakdown voltage of the main transistor 100 may decrease when the electric field is concentrated. At this time, the field dispersion layer can disperse the electric field concentrated around the main gate electrode 155m or the main gate semiconductor layer 152m, thereby reducing leakage current and increasing the breakdown voltage.

[0105] The semiconductor device, depending on some implementation, may also include an upper protective layer 180 located on the protective layer 140.

[0106] The upper protective layer 180 may be located on the protective layer 140, the main source electrode 170m, and the main drain electrode 190m. The upper protective layer 180 may include trenches exposing the main source electrode 170m and the main drain electrode 190m. Each of the main source electrode 170m and the main drain electrode 190m can be electrically connected to a wire through the trenches. For example, the main source electrode 170m can be electrically connected to the second connection line 220 through a first via CV1 penetrating the upper protective layer 180.

[0107] The upper protective layer 180 may include an insulating material. The upper protective layer 180 may include, but is not limited to, the same material as the protective layer 140. For example, the upper protective layer 180 may include oxides such as SiO2 or Al2O3. As another example, the upper protective layer 180 may include nitrides (such as SiN) or oxynitrides (such as SiON).

[0108] In the following text, reference will be made to Figures 6 to 8 Describes the sub-transistors of a semiconductor device according to some implementation methods.

[0109] Figure 6 yes Figure 3An enlarged top view of the SR1 region. Figure 7 It is along Figure 6 The sectional view taken by line B-B'. Figure 8 It is along Figure 6 A sectional view taken by line C-C'.

[0110] Reference Figures 6 to 8 According to some implementations, the sub-transistor 200 of the semiconductor device may be located in the first peripheral circuit region PA1. The sub-transistor 200 may be located on the first side of the main transistor 100 along the second direction (Y direction), but is not limited thereto.

[0111] According to some implementations, the sub-transistor 200 of the semiconductor device may include a sub-channel layer 132s positioned spaced apart from the main channel layer 132m, a sub-gate electrode 155s located on the sub-channel layer 132s, a sub-source electrode 170s located on opposite sides of the sub-gate electrode 155s on the sub-channel layer 132s, and a sub-drain electrode 190s.

[0112] In some implementations, the sub-channel layer 132s can be configured with the channel of the sub-transistor 200, and the sub-drain electrode 190s can be configured with the first electrode D2 of the sub-transistor 200 (see...). Figure 1 The source electrode 170s can be configured with the second electrode S2 of the sub-transistor 200 (see...). Figure 1 The sub-gate electrode 155s can be configured with the gate electrode G2 of the sub-transistor 200 (see...). Figure 1 ).

[0113] Sub-channel layer 132s may be located on substrate 110. Sub-channel layer 132s is a layer that forms a channel between sub-source electrode 170s and sub-drain electrode 190s, and two-dimensional electron gas (2DEG) 134 may be located inside sub-channel layer 132s. In some implementations of the semiconductor device, two-dimensional electron gas 134 may appear at the interface between sub-channel layer 132s and barrier layer 136. For example, two-dimensional electron gas 134 may appear in the portion of sub-channel layer 132s adjacent to barrier layer 136.

[0114] In some implementations, the sub-channel layer 132s may be located on the first side of the main channel layer 132m. For example, the sub-channel layer 132s may be located on the first side of the main channel layer 132m along the second direction (Y direction), but is not limited thereto.

[0115] In some implementations, the sub-channel layer 132s can be formed using the same process as the main channel layer 132m of the main transistor 100. The sub-channel layer 132s can be located in the same layer as the main channel layer 132m. The lower surface of the sub-channel layer 132s can be located at the same level as the lower surface of the main channel layer 132m, and the upper surface of the sub-channel layer 132s can be located at the same level as the upper surface of the main channel layer 132m. That is, the lower surface of the sub-channel layer 132s and the lower surface of the main channel layer 132m can be located at the same distance from the upper surface of the substrate 110. Furthermore, the upper surface of the sub-channel layer 132s and the upper surface of the main channel layer 132m can be located at the same distance from the upper surface of the substrate 110. The thickness of the sub-channel layer 132s along the third direction (Z direction) can be substantially the same as the thickness of the main channel layer 132m along the third direction (Z direction), but is not limited to this. At this point, the sub-channel layer 132s and the main channel layer 132m can be separated by the separation structure 160, which will be described later.

[0116] In some implementations, the sub-channel layer 132s may include the same material as the main channel layer 132m. For example, the sub-channel layer 132s may include one or more materials selected from group III-V materials (e.g., nitrides including Al, Ga, In, B, or combinations thereof).

[0117] In some implementations, the seed layer 121 and the buffer layer 120 may be located between the substrate 110 and the sub-channel layer 132s. The substrate 110, the seed layer 121, and the buffer layer 120 are layers that help form the sub-channel layer 132s, but in some cases they may be omitted.

[0118] According to some implementations of the semiconductor device, the barrier layer 136 may be further located on the sub-channel layer 132s. That is, the barrier layer 136 may extend further on the sub-channel layer 132s. The barrier layer 136 may be located directly on the sub-channel layer 132s. However, it is not limited to this, and another predetermined layer may be further located between the sub-channel layer 132s and the barrier layer 136. The region of the sub-channel layer 132s that overlaps with the barrier layer 136 may be called a drift region. Specifically, since the barrier layer 136 differs from the sub-channel layer 132s in at least one aspect of polarization characteristics, band gap, and lattice constant, a two-dimensional electron gas 134 may be induced by the barrier layer 136 in the sub-channel layer 132s having a relatively low polarizability.

[0119] like Figure 7 and Figure 8As shown, the sub-channel layer 132s may include sub-drift regions (DTRs) between the sub-drain electrode 190s and the sub-source electrode 170s. That is, the sub-drift regions (DTRs) can represent the region of the sub-channel layer 132s from the first side of the sub-channel layer 132s that contacts the sub-source electrode 170s to the sub-drain electrode 190s. The sub-drift regions (DTRs) can also represent the region of the sub-channel layer 132s that overlaps with the barrier layer 136 between the sub-drain electrode 190s and the sub-source electrode 170s. For example, the boundary where the sub-source electrode 170s and the sub-channel layer 132s meet can be the first edge of the sub-drift regions (DTRs), and the boundary where the sub-drain electrode 190s and the sub-channel layer 132s meet can be the second edge of the sub-drift regions (DTRs). In other words, the sub-drift regions (DTRs) can represent the regions where charge carriers move between the sub-drain electrode 190s and the first side of the sub-channel layer 132s that is in contact with the sub-source electrode 170s.

[0120] The sub-gate electrode 155s can be located on the sub-channel layer 132s. The sub-gate electrode 155s can be located on the barrier layer 136. The sub-gate electrode 155s can be located directly on the upper surface of the barrier layer 136. The lower surface of the sub-gate electrode 155s can be in contact with the barrier layer 136. The sub-gate electrode 155s can overlap with a portion of the sub-drift region DTRs of the sub-channel layer 132s in the third direction (Z direction).

[0121] In some implementations, the sub-gate electrode 155s may extend in a first direction (X direction). The sub-gate electrode 155s may extend in a direction different from that of the main gate electrode 155m. For example, the sub-gate electrode 155s may extend in the first direction (X direction), and the main gate electrode 155m may extend in a second direction (Y direction). That is, the sub-gate electrode 155s may extend in a direction different from the extension direction of the main gate electrode 155m. However, this is not a limitation, and various modifications can be made to the extension direction of the sub-gate electrode 155s. As another example, the sub-gate electrode 155s and the main gate electrode 155m may extend in substantially the same direction.

[0122] The sub-gate electrode 155s can be located on the sub-channel layer 132s between the sub-drain electrode 190s and the sub-source electrode 170s. The sub-gate electrode 155s can be spaced apart from the sub-drain electrode 190s and the sub-source electrode 170s. The sub-gate electrode 155s can be positioned closer to the sub-drain electrode 190s than to the sub-source electrode 170s, but is not limited thereto. That is, the spacing between the sub-gate electrode 155s and the sub-drain electrode 190s can be smaller than the spacing between the sub-gate electrode 155s and the sub-source electrode 170s, but is not limited thereto.

[0123] In some implementations, the sub-gate electrode 155s can be formed in the same process as the main gate electrode 155m of the main transistor 100. In some implementations, the lower surface of the sub-gate electrode 155s can be located at a lower level than the lower surface of the main gate electrode 155m. That is, the lower surface of the sub-gate electrode 155s can be positioned closer to the upper surface of the sub-channel layer 132s than the lower surface of the main gate electrode 155m. This can be because the sub-gate electrode 155s contacts the upper surface of the barrier layer 136 while the main gate semiconductor layer 152m is located between the main gate electrode 155m and the barrier layer 136. The thickness of the sub-gate electrode 155s along the third direction (Z direction) can be substantially the same as, but is not limited to, the thickness of the main gate electrode 155m along the third direction (Z direction).

[0124] In some implementations, the sub-gate electrode 155s can be electrically connected to the main source electrode 170m of the main transistor 100. For example, as... Figure 6 and Figure 7 As shown, the semiconductor device, according to some implementations, may further include a second connection line 220 electrically interconnecting the sub-gate electrode 155s and the main source electrode 170m. The second connection line 220 may be located on the upper protective layer 180. The second connection line 220 may be located within a first via CV1 that penetrates the upper protective layer 180 and exposes the main source electrode 170m. Furthermore, the second connection line 220 may be located within a second via CV2 that penetrates both the upper protective layer 180 and the protective layer 140 and exposes the sub-gate electrode 155s. The second connection line 220 may fill both the first via CV1 and the second via CV2. Therefore, the sub-gate electrode 155s can be electrically connected to the main source electrode 170m via the second connection line 220 located on the upper protective layer 180. The second connection line 220 may overlap with the sub-source electrode 170s, which will be described subsequently, in a third direction (Z direction), but is not limited thereto.

[0125] Figure 6 and Figure 7 The second connecting line 220 is shown to overlap with the first channel pattern 310, which will be described later, in the third direction (Z direction) and not overlap with the separator structure 160 in the third direction (Z direction), but is not limited thereto. For example, at least a portion of the second connecting line 220 may not overlap with the first channel pattern 310 in the third direction (Z direction). As another example, at least a portion of the second connecting line 220 may overlap with the separator structure 160 in the third direction (Z direction).

[0126] The sub-gate electrode 155s may include a conductive material. The sub-gate electrode 155s may include the same material as the main gate electrode 155m. However, it is not limited thereto, and the sub-gate electrode 155s may include a different material than the main gate electrode 155m.

[0127] In some implementations, a hard mask layer may be further included on the sub-gate electrode 155s. The hard mask layer may be a hard mask used during the patterning of the gate electrode material layer and / or the gate semiconductor layer during the process of forming the sub-gate electrode 155s. However, the hard mask layer may be removed depending on the etching conditions for etching the gate electrode material layer and / or the gate semiconductor layer, or on the cleaning conditions following etching. For example, the hard mask layer may comprise silicon oxide, silicon nitride, silicon oxide nitride, or a combination thereof.

[0128] According to some implementations, the sub-transistor 200 of the semiconductor device can be a normally-on high electron mobility transistor. In the sub-transistor 200, the sub-gate electrode 155s can be located directly on the upper surface of the barrier layer 136, and unlike the main transistor 100, the gate semiconductor layer can be omitted between the barrier layer 136 and the sub-gate electrode 155s. When no voltage is applied to the sub-gate electrode 155s, the two-dimensional electron gas 134 can be used as a channel, and current can flow between the sub-source electrode 170s and the sub-drain electrode 190s. Furthermore, when a negative voltage is applied to the sub-gate electrode 155s, a depletion region can appear in the lower part of the sub-gate electrode 155s, in which the flow of the two-dimensional electron gas 134 is interrupted. Due to the appearance of the depletion region, current may not flow between the sub-drain electrode 190s and the sub-source electrode 170s, and the channel path can be blocked.

[0129] According to some implementations, the protective layer 140 and the upper protective layer 180 of the semiconductor device may be further located on the sub-transistor 200. The protective layer 140 and the upper protective layer 180 may extend further above the sub-transistor 200. The protective layer 140 may cover the sub-gate electrode 155s. The upper protective layer 180 may cover the protective layer 140, the sub-source electrode 170s, and the sub-drain electrode 190s.

[0130] The source electrode 170s and the drain electrode 190s can be located on the subchannel layer 132s. The source electrode 170s and the drain electrode 190s can be in direct contact with the subchannel layer 132s and can be electrically connected to the subchannel layer 132s.

[0131] The sub-source electrode 170s and sub-drain electrode 190s can extend in a first direction (X direction). The sub-source electrode 170s and sub-drain electrode 190s can also extend in a direction different from the main source electrode 170m and main drain electrode 190m. For example, the sub-source electrode 170s and sub-drain electrode 190s can extend in the first direction (X direction), and the main source electrode 170m and main drain electrode 190m can extend in a second direction (Y direction). However, this is not a limitation, and the extension direction of the sub-source electrode 170s and sub-drain electrode 190s can be modified in various ways. As another example, the sub-source electrode 170s and main source electrode 170m can extend in substantially the same direction. The sub-drain electrode 190s and main drain electrode 190m can also extend in substantially the same direction.

[0132] The source electrode 170s and the drain electrode 190s can be spaced apart from each other, and the gate electrode 155s can be located between the source electrode 170s and the drain electrode 190s. The gate electrode 155s can be spaced apart from the source electrode 170s and the drain electrode 190s. For example, the source electrode 170s can be electrically connected to the sub-channel layer 132s on a first side of the gate electrode 155s, and the drain electrode 190s can be electrically connected to the sub-channel layer 132s on a second side of the gate electrode 155s. The source electrode 170s and the drain electrode 190s can be located outside the sub-drift regions (DTRs) of the sub-channel layer 132s. The interface between the source electrode 170s and the sub-channel layer 132s can be a first edge of the sub-drift region (DTR). Similarly, the interface between the drain electrode 190s and the sub-channel layer 132s can be a second edge of the sub-drift region (DTR).

[0133] The sub-source electrode 170s and sub-drain electrode 190s can be located within a trench that recesses the upper surface of the sub-channel layer 132s. Their detailed description is substantially the same as that of the main source electrode 170m and main drain electrode 190m located within a trench that recesses the upper surface of the main channel layer 132m, and will be omitted here.

[0134] In some implementations, the sub-source electrode 170s can be electrically connected to the main gate electrode 155m of the main transistor 100. For example, as... Figure 6 and Figure 8As shown, the semiconductor device, according to some implementations, may further include a first interconnect line 210 electrically interconnecting the sub-source electrode 170s and the main gate electrode 155m. The first interconnect line 210 may be located on the upper protective layer 180. The first interconnect line 210 may be located within a third via CV3 that penetrates the upper protective layer 180 and the protective layer 140 and exposes the main gate electrode 155m. Furthermore, the first interconnect line 210 may be located within a fourth via CV4 that penetrates the upper protective layer 180 and exposes the sub-source electrode 170s. The first interconnect line 210 may fill both the third via CV3 and the fourth via CV4. Therefore, the main gate electrode 155m can be electrically connected to the sub-source electrode 170s via the first interconnect line 210 located on the upper protective layer 180. The first interconnect line 210 may overlap with the partition structure 160, which will be described subsequently, in a third direction (Z direction), but is not limited thereto.

[0135] Figure 8 The diagram shows that the first connecting line 210 overlaps with the partition structure 160, which will be described later, in the third direction (Z direction), but is not limited thereto. For example, at least a portion of the first connecting line 210 may not overlap with the partition structure 160 in the third direction (Z direction).

[0136] also, Figure 8 The diagram shows the first connecting line 210 located on the upper protective layer 180, but is not limited thereto. For example, the first connecting line 210 may be located between the protective layer 140 and the upper protective layer 180. As another example, the first connecting line 210 may be positioned on the protective layer located on the upper protective layer 180.

[0137] In some implementations, the sub-source electrode 170s can be electrically connected to the main source electrode 170m. For example, as... Figure 6 and Figure 7 As shown, the sub-source electrode 170s can be electrically connected to the main source electrode 170m via the first channel pattern 310. However, it is not limited to this; as another example, the sub-source electrode 170s can be electrically connected via the second channel pattern 320 (see...). Figure 11 It is electrically connected to the main gate electrode 155m. A detailed description of it will follow.

[0138] The sub-source electrode 170s and sub-drain electrode 190s may include conductive materials. The sub-source electrode 170s and sub-drain electrode 190s may include the same materials as the main source electrode 170m and main drain electrode 190m.

[0139] Figure 7 and Figure 8The semiconductor device shown, according to some implementations, includes a pair of sub-source electrodes 170s and sub-drain electrodes 190s, but the number of sub-source electrodes 170s and sub-drain electrodes 190s is not limited thereto. For example, the sub-source electrodes 170s may include a plurality of sub-source electrodes sequentially stacked on the sub-channel layer 132s in the third direction (Z direction), and the sub-drain electrodes 190s may include a plurality of sub-drain electrodes sequentially stacked on the sub-channel layer 132s in the third direction (Z direction).

[0140] According to some implementations, the semiconductor device may include a sub-transistor 200 electrically connected to the main gate electrode 155m and the main source electrode 170m of the main transistor 100. The sub-transistor 200 can be turned off within a predetermined range, thus preventing unwanted signals from being transmitted to the main gate electrode 155m of the main transistor 100, thereby protecting the main transistor 100. Therefore, the semiconductor device according to some implementations can be protected, and reliability can be improved.

[0141] In the following text, reference will be made to Figure 6 and Figure 7 Describes the resistive element of a semiconductor device according to some implementation methods.

[0142] Reference Figure 6 and Figure 7 According to some implementations, the resistive element of the semiconductor device may include a first resistive element 31 that electrically interconnects the main source electrode 170m and the sub-source electrode 170s. The first resistive element 31 may include a first channel pattern 310, which includes a drift resistance region DTRr having a two-dimensional electron gas 134.

[0143] The first channel pattern 310 may be located in the second peripheral circuit region PA2. The first channel pattern 310 may be located on the substrate 110. The first channel pattern 310 is a layer that forms a channel between the main source electrode 170m and the sub-source electrode 170s, and a two-dimensional electron gas (2DEG) 134 may be located inside the first channel pattern 310. In some implementations of the semiconductor device, the two-dimensional electron gas 134 may appear at the interface between the first channel pattern 310 and the barrier layer 136. For example, the two-dimensional electron gas 134 may appear in the portion of the first channel pattern 310 adjacent to the barrier layer 136.

[0144] The first channel pattern 310 may be located between the main source electrode 170m and the sub-source electrode 170s. The first channel pattern 310 may be in contact with the main source electrode 170m and the sub-source electrode 170s. The first channel pattern 310 may be located on the first side of the main channel layer 132m. For example, the first channel pattern 310 may be located on the first side of the main channel layer 132m along the second direction (Y direction), but is not limited thereto.

[0145] In some implementations, the first channel pattern 310 may extend in a second direction (Y direction). The first channel pattern 310 may extend from the main source electrode 170m in substantially the same direction as the main source electrode 170m. However, it is not limited thereto; the first channel pattern 310 may also include portions extending in a direction different from the main source electrode 170m. This will be referred to subsequently. Figure 9 Describe it.

[0146] At this time, the extension length of the first channel pattern 310 can be from 1 μm to 10 μm. Preferably, the extension length of the first channel pattern 310 can be from 2 μm to 4 μm. Here, the extension length of the first channel pattern 310 can represent the length of the first channel pattern 310 along the elongation direction. For example, in Figure 6 In this implementation, the extension length of the first channel pattern 310 can be substantially the same as the length of the first channel pattern 310 along the second direction (Y direction). Within this range, the temperature coefficient of resistance (TCR) of the first resistive element 31 can become approximately 0.

[0147] In some implementations, the first channel pattern 310 can be formed using the same process as the main channel layer 132m of the main transistor 100 and the sub-channel layer 132s of the sub-transistor 200. The first channel pattern 310 can be integrally formed with the main channel layer 132m and the sub-channel layer 132s. The first channel pattern 310 can be located in the same layer as the main channel layer 132m and the sub-channel layer 132s.

[0148] More specifically, the lower surface of the first channel pattern 310 can be located at the same level as the lower surfaces of the main channel layer 132m and the sub-channel layer 132s, and the upper surface of the first channel pattern 310 can be located at the same level as the upper surfaces of the main channel layer 132m and the sub-channel layer 132s. That is, the lower surfaces of the first channel pattern 310 and the main channel layer 132m can be located at the same distance from the upper surface of the substrate 110, and the lower surfaces of the first channel pattern 310 and the sub-channel layer 132s can be located at the same distance from the upper surface of the substrate 110. Furthermore, the upper surfaces of the first channel pattern 310 and the main channel layer 132m can be located at the same distance from the upper surface of the substrate 110, and the upper surfaces of the first channel pattern 310 and the sub-channel layer 132s can be located at the same distance from the upper surface of the substrate 110. The thickness of the first channel pattern 310 along the third direction (Z direction) can be substantially the same as, but not limited to, the thickness of the main channel layer 132m along the third direction (Z direction) and the thickness of the sub-channel layer 132s along the third direction (Z direction).

[0149] According to some implementations, the barrier layer 136 of the semiconductor device may be further located on the first channel pattern 310. The barrier layer 136 may extend further on the first channel pattern 310. The barrier layer 136 may be located directly on the first channel pattern 310. However, it is not limited to this, and another predetermined layer may be further located between the first channel pattern 310 and the barrier layer 136.

[0150] Therefore, the first channel pattern 310 overlapping with the barrier layer 136 may include a drift resistance region DTRr between the main source electrode 170m and the sub-source electrode 170s. That is, the drift resistance region DTRr may represent the region of the first channel pattern 310 from the first side of the first channel pattern 310 in contact with the main source electrode 170m to the sub-source electrode 170s. The drift resistance region DTRr may represent the region of the first channel pattern 310 overlapping with the barrier layer 136 between the main source electrode 170m and the sub-source electrode 170s. For example, the boundary where the main source electrode 170m and the first channel pattern 310 meet each other may be the first side edge of the drift resistance region DTRr, and the boundary where the sub-source electrode 170s and the first channel pattern 310 meet each other may be the second side edge of the drift resistance region DTRr. In other words, the drift resistance region DTRr can represent the region in which charge carriers move between the sub-source electrode 170s and the first side of the first channel pattern 310 that is in contact with the main source electrode 170m.

[0151] The drift resistance region DTRr can have a resistive component. That is, the drift resistance region DTRr can be used as a first resistive element 31 with a predetermined resistance value. In this case, the resistance of the drift resistance region DTRr can have different values ​​depending on the temperature. For example, the resistance of the drift resistance region DTRr can increase with increasing temperature. That is, the resistance of the drift resistance region DTRr can have a positive temperature coefficient of resistance (TCR). For example, the temperature coefficient of resistance per unit length of the drift resistance region DTRr can be from about 5 (Ω / μm℃) to about 15 (Ω / μm℃).

[0152] In some implementations, the main source electrode 170m and the sub-source electrode 170s can be in ohmic contact with the first channel pattern 310. In this case, the first contact interface IF1 between the main source electrode 170m and the first channel pattern 310 and the second contact interface IF2 between the sub-source electrode 170s and the first channel pattern 310 can have a resistive component. Specifically, during the process of charge carriers that have passed through the two-dimensional electron gas 134 passing through the first channel pattern 310 and transferring to the main source electrode 170m and the sub-source electrode 170s, the first contact interface IF1 between the main source electrode 170m and the first channel pattern 310 and the second contact interface IF2 between the sub-source electrode 170s and the first channel pattern 310 can have a predetermined resistance value.

[0153] In the following text, for better understanding and ease of description, the resistance of the first contact interface IF1 between the main source electrode 170m and the first channel pattern 310 can be defined as the first contact resistance, and the resistance of the second contact interface IF2 between the sub-source electrode 170s and the first channel pattern 310 can be defined as the second contact resistance.

[0154] The first and second contact resistances can have different values ​​depending on the temperature. For example, the first and second contact resistances can decrease as the temperature increases. That is, the first and second contact resistances can have a negative temperature coefficient of resistance (TCR). For example, the temperature coefficient of resistance (TCR) of the first and second contact resistances can be from about -20 (Ω / ℃) to about -10 (Ω / ℃).

[0155] In some implementations, the resistance of the drift resistance region DTRr, the first contact resistance, and the second contact resistance can be configured using a first resistive element 31 of the semiconductor device according to some implementations. The resistance of the first resistive element 31 can be substantially the same as the sum of the resistance of the drift resistance region DTRr, the first contact resistance, and the second contact resistance.

[0156] In some implementations, the temperature coefficient of resistance (TCR) of the first resistive element 31 can be approximately 0. That is, the first resistive element 31 can have a nearly constant value regardless of temperature. In this case, the extension length of the first channel pattern 310 can be from 1 μm to 10 μm. Preferably, the extension length of the first channel pattern 310 can be from 2 μm to 4 μm. Here, the extension length of the first channel pattern 310 can represent the length of the first channel pattern 310 along the elongation direction. For example, in Figure 6 In this implementation, the extension length of the first channel pattern 310 can be substantially the same as the length of the first channel pattern 310 along the second direction (Y direction). Within this range, the temperature coefficient of resistance (TCR) of the first resistive element 31 can converge to approximately 0.

[0157] In some implementations, the first channel pattern 310 may overlap with the second connecting line 220 in the third direction (Z direction), but is not limited thereto.

[0158] In some implementations, the first channel pattern 310 may include the same material as the main channel layer 132m and the sub-channel layer 132s. For example, the first channel pattern 310 may include one or more materials selected from group III-V materials (e.g., nitrides including Al, Ga, In, B, or combinations thereof).

[0159] Since the semiconductor device according to some implementations includes a first resistive element 31 between the main source electrode 170m and the sub-source electrode 170s, the charge accumulated in the sub-transistor 200 and the main transistor 100 can be released through the first resistive element 31. Furthermore, the first resistive element 31 has an approximately constant value independent of temperature, and is virtually unaffected by the ambient temperature environment. Therefore, the semiconductor device according to some implementations can be protected, and reliability can be improved.

[0160] Depending on the implementation, the semiconductor device may also include a partition structure 160.

[0161] The partition structure 160 can be located in the second peripheral circuit region PA2. The sub-transistor 200 can be separated from the main transistor 100 through the partition structure 160. For example, as... Figure 3 As shown, the main transistor 100 and the sub-transistor 200 can be positioned separately in a second direction (Y direction) by means of a separation structure 160, but are not limited thereto.

[0162] The partition structure 160 may define a first channel pattern 310 of the first resistive element 31. The partition structure 160 may surround at least a portion of the first resistive element 31, but is not limited thereto.

[0163] In some implementations, the separator 160 can penetrate the channel layers 132m and 132s and the barrier layer 136. For example, as Figure 8 As shown, the separator 160 can penetrate the barrier layer 136, the channel layers 132m and 132s, the seed layer 121, and the buffer layer 120 to cause at least a portion of the substrate 110 to be recessed. However, it is not limited to this. As another example, the separator 160 can penetrate the barrier layer 136 and the channel layers 132m and 132s and can cause at least a portion of the buffer layer 120 to be recessed.

[0164] In some implementations, the partition structure 160 can be formed by forming a barrier layer 136 on the channel layers 132m and 132s and by performing an ion implantation process within the barrier layer 136 located between the main transistor 100 and the sub-transistor 200. For example, in the regions of the channel layers 132m and 132s that overlap with the regions in the barrier layer 136 where the ion implantation process is performed in the third direction (Z direction), a two-dimensional electron gas may not be formed or a very small two-dimensional electron gas may be formed. In this case, the ion implantation region of the barrier layer 136 and the corresponding regions of the channel layers 132m and 132s can correspond to the partition structure 160. As another example, the main gate semiconductor layer 152m can be formed on the barrier layer 136, and the ion implantation process can be performed at the top end of the main gate semiconductor layer 152m, after which the main gate semiconductor layer 152m can be patterned. Therefore, the ion implantation regions of the exposed barrier layer 136, channel layers 132m and 132s, and buffer layer 120 can correspond to the partition structure 160. The material used in the ion implantation process can be argon (Ar) ions.

[0165] However, this is not a limitation. The separator structure 160 can be formed by forming a barrier layer 136 on the channel layers 132m and 132s, forming trenches penetrating the barrier layer 136, and then filling the trenches with an insulating material. During the trench formation process, at least a portion of the channel layers 132m and 132s may also be recessed. In this case, the insulating material configuring the separator structure 160 may include the same material as the protective layer 140 and / or the upper protective layer 180. For example, the insulating material configuring the separator structure 160 may include oxides, such as SiO2 or Al2O3. As another example, the insulating material configuring the separator structure 160 may include nitrides (such as SiN) or oxynitrides (such as SiON). However, this is not a limitation. The insulating material configuring the separator structure 160 may include a material different from the protective layer 140.

[0166] In the following text, reference will be made to Figures 9 to 18 Describes the resistive element of a semiconductor device according to some implementation methods.

[0167] Figures 9 to 11 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations. Figure 12 It is along Figure 11 A sectional view taken by line D-D'. Figure 13 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations. Figure 14 It is along Figure 13 A sectional view taken from line E-E'. Figure 15 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations. Figure 16 It is along Figure 15 The sectional view taken by line F-F'. Figure 17 It corresponds to Figure 3 The top plan view of the SR1 region shows the semiconductor device according to some implementations. Figure 18 It is along Figure 17 A cross-sectional view taken by line G-G'.

[0168] Figures 9 to 18 Performance based on Figures 1 to 8 Various modifications to semiconductor devices are shown in some implementations. Due to... Figures 9 to 18 The implementation shown has the same characteristics as Figures 1 to 8 The implementations shown are essentially the same, so their descriptions will be omitted and the differences will be the primary focus. Furthermore, the same reference numerals will be used for the same parts as in the previous implementations.

[0169] Reference Figure 9 In some implementations, the first channel pattern 310 of the first resistive element 31 can have various shapes in a planar view. For example, the first channel pattern 310 may include a portion electrically connected to the main source electrode 170m and extending in a second direction (Y direction), a portion located between the main source electrode 170m and the sub-source electrode 170s and extending in a first direction (X direction), and a portion electrically connected to the sub-source electrode 170s and extending in a second direction (Y direction). However, it is not limited to this, and the shape of the first channel pattern 310 can be varied within the range of electrically interconnecting the main source electrode 170m and the sub-source electrode 170s.

[0170] In some implementations, the first channel pattern 310 may overlap with the first connecting line 210 in the third direction (Z direction). Furthermore, depending on the shape of the first channel pattern 310, the second connecting line 220 may overlap with the separating structure 160 in the third direction (Z direction), but is not limited thereto.

[0171] Reference Figure 10 In some implementations, the first resistive element 31 may also include dummy contact electrodes CT1 and CT2.

[0172] The dummy contact electrodes CT1 and CT2 can be located on the first channel pattern 310. The dummy contact electrodes CT1 and CT2 can be located in a groove that recesses the upper surface of the first channel pattern 310. The dummy contact electrodes CT1 and CT2 can contact the first channel pattern 310 and can be electrically connected to the first channel pattern 310.

[0173] In some implementations, the first channel pattern 310 can be divided into multiple parts 310_P1 to 310_P3 by using dummy contact electrodes CT1 and CT2. For example, the first channel pattern 310 can be divided into a first part 310_P1 and a second part 310_P2 by using the first dummy contact electrode CT1, and the first channel pattern 310 can be divided into a second part 310_P2 and a third part 310_P3 by using the second dummy contact electrode CT2.

[0174] In some implementations, since the first channel pattern 310 is divided into multiple portions 310_P1 to 310_P3 by dummy contact electrodes CT1 and CT2, each of the multiple portions 310_P1 to 310_P3 of the first channel pattern 310 can have a similar drift resistance region DTRr (see... Figure 7 The drift resistance region. The drift resistance region can have a resistive component. The resistance of the drift resistance region can have a positive temperature coefficient of resistance (TCR). Its detailed description is consistent with... Figure 6 and Figure 7 The description of the drift resistance region DTRr is essentially the same and will be omitted here.

[0175] In some implementations, the dummy contact electrodes CT1 and CT2 can have ohmic contact with the first channel pattern 310. In this case, the third contact interface IF3 between the main source electrode 170m and the first portion 310_P1, and the fourth contact interface IF4 between the first dummy contact electrode CT1 and the first portion 310_P1, can have a resistive component. In the following text, for better understanding and ease of description, the resistance of the third contact interface IF3 between the main source electrode 170m and the first portion 310_P1 can be defined as the third contact resistance, and the resistance of the fourth contact interface IF4 between the first dummy contact electrode CT1 and the first portion 310_P1 can be defined as the fourth contact resistance.

[0176] The third and fourth contact resistances can have different values ​​depending on the temperature. For example, the third and fourth contact resistances can decrease as the temperature increases. That is, the third and fourth contact resistances can have a negative temperature coefficient of resistance (TCR). For example, the temperature coefficient of resistance (TCR) of the third and fourth contact resistances can be from about -20 (Ω / ℃) to about -10 (Ω / ℃).

[0177] Furthermore, the contact interfaces between the first dummy contact electrode CT1 and the second part 310_P2, the contact interfaces between the second dummy contact electrode CT2 and the second part 310_P2, the contact interfaces between the second dummy contact electrode CT2 and the third part 310_P3, and the contact interfaces between the sub-source electrode 170s and the third part 310_P3 may also have contact resistances with a negative temperature coefficient of resistance (TCR).

[0178] In some implementations, the resistance and contact resistance of the drift resistance regions of the plurality of portions 310_P1 to 310_P3 can be configured with a first resistive element 31 of the semiconductor device according to some implementations. The temperature coefficient of resistance (TCR) of the first resistive element 31 can be substantially zero. That is, the first resistive element 31 can have a nearly constant value regardless of temperature. In this case, the extension length of each of the plurality of portions 310_P1 to 310_P3 can be from 1 μm to 10 μm. Preferably, the extension length of each of the plurality of portions 310_P1 to 310_P3 can be from 2 μm to 4 μm. Here, the extension length of each of the plurality of portions 310_P1 to 310_P3 can represent the length of each of the plurality of portions 310_P1 to 310_P3 along the extension direction. For example, in Figure 10 In this implementation, the extension length of the first portion 310_P1 can be substantially the same as the sum of the length of the first portion 310_P1 extending in the second direction (Y direction) and its extension length extending in the first direction (X direction). Within such a range, the temperature coefficient of resistance (TCR) of the first resistive element 31 can converge to approximately 0.

[0179] Reference Figure 11 and Figure 12 According to some implementations, the resistive element of a semiconductor device may include a second resistive element 32 that electrically interconnects the main source electrode 170m and the main gate electrode 155m.

[0180] The second resistive element 32 may include a second channel pattern 320, which includes a drift resistance region DTRr having a two-dimensional electron gas 134.

[0181] The second channel pattern 320 may be located in the second peripheral circuit region PA2. The second channel pattern 320 may be located on the substrate 110. The second channel pattern 320 is a layer that forms a channel between the main source electrode 170m and the first connection line 210, and a two-dimensional electron gas (2DEG) 134 may be located inside the second channel pattern 320. In some implementations of the semiconductor device, the two-dimensional electron gas 134 may appear at the interface between the second channel pattern 320 and the barrier layer 136. For example, the two-dimensional electron gas 134 may appear in the portion of the second channel pattern 320 adjacent to the barrier layer 136.

[0182] In some implementations, the second channel pattern 320 can be electrically and physically connected to the first connection line 210. For example, the first connection line 210 can be located within a fifth via CV5 that penetrates the upper guard layer 180, guard layer 140, and barrier layer 136. The first connection line 210 can fill the fifth via CV5. Therefore, the first connection line 210 can penetrate the upper guard layer 180, guard layer 140, and barrier layer 136 and become in contact with the second channel pattern 320. In some implementations, since the first connection line 210 electrically interconnects the main gate electrode 155m and the sub-source electrode 170s, the main source electrode 170m can be electrically connected to the sub-source electrode 170s through the second channel pattern 320.

[0183] According to some implementations, the barrier layer 136 of the semiconductor device may be further located on the second channel pattern 320. The barrier layer 136 may extend further on the second channel pattern 320. The barrier layer 136 may be located directly on the second channel pattern 320. However, it is not limited to this, and another predetermined layer may be further located between the second channel pattern 320 and the barrier layer 136.

[0184] Therefore, the second channel pattern 320 may include a drift resistance region DTRr between the main source electrode 170m and the first connection line 210. That is, the drift resistance region DTRr may represent the area of ​​the second channel pattern 320 from the first side of the second channel pattern 320 that contacts the main source electrode 170m to the first connection line 210.

[0185] In some implementations, the second channel pattern 320 can be formed using the same process as the main channel layer 132m of the main transistor 100 and the sub-channel layer 132s of the sub-transistor 200. The second channel pattern 320 can be integrally formed with the main channel layer 132m. The second channel pattern 320 can be located in the same layer as the main channel layer 132m and the sub-channel layer 132s. Its detailed description is consistent with... Figure 6 and Figure 7 The description of the first channel pattern 310 is essentially the same as that of the implementation method and will be omitted here.

[0186] Further reference Figure 13 and Figure 14 In some implementations, the second channel pattern 320 can be electrically and physically connected to the second connection line 220. For example, the second channel pattern 320 can be electrically connected to the first connection line 210. For example, the second connection line 220 can be located within a sixth via CV6 that penetrates the upper protective layer 180, the protective layer 140, and the barrier layer 136. The second connection line 220 can fill the sixth via CV6. Therefore, the second connection line 220 can penetrate the upper protective layer 180, the protective layer 140, and the barrier layer 136 and become in contact with the second channel pattern 320.

[0187] In this case, the second channel pattern 320 may include a drift resistance region DTRr between the first connection line 210 and the second connection line 220. That is, the drift resistance region DTRr may represent the area of ​​the second channel pattern 320 from the first side of the second channel pattern 320 that contacts the first connection line 210 to the second connection line 220.

[0188] Because according to Figures 11 to 14 Some implementations of the semiconductor device include a second resistive element 32 that electrically interconnects the main source electrode 170m and the main gate electrode 155m, so that the charge accumulated in the sub-transistor 200 and the main transistor 100 can be released through the second resistive element 32. Therefore, the semiconductor device according to some implementations can be protected and its reliability can be improved.

[0189] Reference Figure 15 and Figure 16 According to some implementations, the resistive element of a semiconductor device may include a third resistive element 33 that electrically interconnects the main gate electrode 155m and the sub-gate electrode 155s.

[0190] The third resistive element 33 may include a third channel pattern 330, which includes a drift resistive region DTRr having a two-dimensional electron gas 134.

[0191] The third channel pattern 330 may be located in the second peripheral circuit region PA2. The third channel pattern 330 may be located on the substrate 110. The third channel pattern 330 is a layer that forms a channel between the first connection line 210 and the fourth connection line 240, and a two-dimensional electron gas (2DEG) 134 may be located inside the third channel pattern 330. In some implementations of the semiconductor device, the two-dimensional electron gas 134 may appear at the interface between the third channel pattern 330 and the barrier layer 136. For example, the two-dimensional electron gas 134 may appear in the portion of the third channel pattern 330 adjacent to the barrier layer 136.

[0192] In some implementations, the third channel pattern 330 can be electrically and physically connected to the first connection line 210. For example, the first connection line 210 can be located within a seventh via CV7 that penetrates the upper protective layer 180, the protective layer 140, and the barrier layer 136. The first connection line 210 can fill the seventh via CV7. Therefore, the first connection line 210 can penetrate the upper protective layer 180, the protective layer 140, and the barrier layer 136 and become in contact with the third channel pattern 330.

[0193] In some implementations, the third channel pattern 330 can be electrically connected to the sub-gate electrode 155s. For example, as... Figure 15 and Figure 16 As shown, the semiconductor device, according to some implementations, may further include a fourth interconnect line 240 electrically interconnecting the sub-gate electrode 155s and the third channel pattern 330. The fourth interconnect line 240 may be located on the upper guard layer 180. The fourth interconnect line 240 may be located within a ninth via CV9 that penetrates the upper guard layer 180 and the guard layer 140 and exposes the sub-gate electrode 155s. Furthermore, the fourth interconnect line 240 may be located within an eighth via CV8 that penetrates the upper guard layer 180, the guard layer 140, and the barrier layer 136 and exposes the third channel pattern 330. The fourth interconnect line 240 may fill both the eighth via CV8 and the ninth via CV9. Therefore, the sub-gate electrode 155s can be electrically connected to the third channel pattern 330 via the fourth interconnect line 240 located on the upper guard layer 180. The fourth interconnect line 240 may overlap with the partition structure 160 in the third third direction (Z direction), but is not limited thereto.

[0194] According to some implementations, the barrier layer 136 of the semiconductor device may be further located on the third channel pattern 330. The barrier layer 136 may extend further on the third channel pattern 330. The barrier layer 136 may be located directly on the third channel pattern 330. However, it is not limited to this, and another predetermined layer may be further located between the third channel pattern 330 and the barrier layer 136.

[0195] Therefore, the third channel pattern 330 may include a drift resistance region DTRr between the first connection line 210 and the fourth connection line 240. That is, the drift resistance region DTRr may represent the area of ​​the third channel pattern 330 from the first side of the third channel pattern 330 that contacts the first connection line 210 to the fourth connection line 240.

[0196] In some implementations, the third channel pattern 330 can be formed using the same process as the main channel layer 132m of the main transistor 100 and the sub-channel layer 132s of the sub-transistor 200. The third channel pattern 330 can be located in the same layer as the main channel layer 132m and the sub-channel layer 132s. Its detailed description is consistent with... Figure 6 and Figure 7The description of the first channel pattern 310 is essentially the same as that of the implementation method and will be omitted here.

[0197] Because according to Figure 15 and Figure 16 Some implementations of the semiconductor device include a third resistive element 33 that electrically interconnects the main gate electrode 155m and the sub-gate electrode 155s, so that the charge accumulated in the sub-transistor 200 and the main transistor 100 can be released through the third resistive element 33. Therefore, the semiconductor device according to some implementations can be protected and its reliability can be improved.

[0198] Reference Figure 17 and Figure 18 According to some implementations, the resistive element of the semiconductor device may include a fourth resistive element 34 that electrically interconnects the sub-gate electrode 155s and the sub-source electrode 170s.

[0199] The fourth resistive element 34 may include a fourth channel pattern 340, which includes a drift resistive region DTRr having a two-dimensional electron gas 134.

[0200] The fourth channel pattern 340 may be located in the second peripheral circuit region PA2. The fourth channel pattern 340 may be located on the substrate 110. The fourth channel pattern 340 is a layer that forms a channel between the third connection line 230 and the sub-source electrode 170s, and a two-dimensional electron gas (2DEG) 134 may be located inside the fourth channel pattern 340. In some implementations of the semiconductor device, the two-dimensional electron gas 134 may appear at the interface between the fourth channel pattern 340 and the barrier layer 136. For example, the two-dimensional electron gas 134 may appear in the portion of the fourth channel pattern 340 adjacent to the barrier layer 136.

[0201] The fourth channel pattern 340 can be electrically connected to the sub-source electrode 170s. The fourth channel pattern 340 can be in contact with the sub-source electrode 170s.

[0202] In some implementations, the fourth channel pattern 340 can be electrically connected to the sub-gate electrode 155s. For example, as... Figure 17 and Figure 18As shown, the semiconductor device, according to some implementations, may further include a third connection line 230 electrically interconnecting the sub-gate electrode 155s and the fourth channel pattern 340. The third connection line 230 may be located on the upper guard layer 180. The third connection line 230 may be located within a ninth via CV9 that penetrates the upper guard layer 180 and the guard layer 140 and exposes the sub-gate electrode 155s. Furthermore, the third connection line 230 may be located within a tenth via CV10 that penetrates the upper guard layer 180, the guard layer 140, and the barrier layer 136 and exposes the fourth channel pattern 340. The third connection line 230 may fill the ninth via CV9 and the tenth via CV10. Therefore, the sub-gate electrode 155s can be electrically connected to the fourth channel pattern 340 via the third connection line 230 located on the upper guard layer 180. The third connection line 230 may overlap with the partition structure 160 in the third direction (Z direction), but is not limited thereto.

[0203] Therefore, the fourth channel pattern 340 may include a drift resistance region DTRr between the sub-source electrode 170s and the third connection line 230. That is, the drift resistance region DTRr may represent the region of the fourth channel pattern 340 from the first side of the fourth channel pattern 340 in contact with the sub-source electrode 170s to the third connection line 230.

[0204] In some implementations, the fourth channel pattern 340 can be formed using the same process as the sub-channel layer 132s of the sub-transistor 200. The fourth channel pattern 340 can be integrally formed with the sub-channel layer 132s. The fourth channel pattern 340 can be located in the same layer as the main channel layer 132m and the sub-channel layer 132s. Its detailed description is consistent with... Figure 6 and Figure 7 The description of the first channel pattern 310 is essentially the same as that of the implementation method and will be omitted here.

[0205] Because according to Figure 17 and Figure 18 Some implementations of the semiconductor device include a fourth resistive element 34 that electrically interconnects the sub-gate electrode 155s and the sub-source electrode 170s, so that the charge accumulated in the sub-transistor 200 and the main transistor 100 can be released through the fourth resistive element 34. Therefore, the semiconductor device according to some implementations can be protected and its reliability can be improved.

[0206] In the following text, reference will be made to Figure 19 Describes semiconductor devices based on some implementation methods.

[0207] Figure 19 It corresponds to Figure 6 A cross-sectional view along line C-C', which shows a semiconductor device according to some implementation.

[0208] Figure 19Performance based on Figures 1 to 8 Various modifications to semiconductor devices are shown in some implementations. Due to... Figure 19 The implementation shown has the same characteristics as Figures 1 to 8 The implementations shown are essentially the same, so their descriptions will be omitted and the differences will be the primary focus. Furthermore, the same reference numerals will be used for the same parts as in the previous implementations.

[0209] Reference Figure 19 According to some implementations, the sub-transistor 200_1 of the semiconductor device may also include a sub-gate semiconductor layer 152s located between the sub-gate electrode 155s and the barrier layer 136.

[0210] The sub-gate semiconductor layer 152s can be located on the barrier layer 136, and the sub-gate electrode 155s can be located on the sub-gate semiconductor layer 152s. The sub-gate electrode 155s and the sub-gate semiconductor layer 152s can be a Schottky contact or an ohmic contact.

[0211] The sub-gate semiconductor layer 152s can be located between the sub-source electrode 170s and the sub-drain electrode 190s. The sub-gate semiconductor layer 152s can be spaced apart from the sub-source electrode 170s and the sub-drain electrode 190s.

[0212] In some implementations, the sub-gate semiconductor layer 152s may overlap with the sub-gate electrode 155s in the third direction (Z direction). For example, the sub-gate semiconductor layer 152s may completely overlap with the sub-gate electrode 155s in the third direction (Z direction). That is, the side surface of the sub-gate semiconductor layer 152s may be aligned with the side surface of the sub-gate electrode 155s. However, it is not limited to this; the sub-gate semiconductor layer 152s may partially overlap with the sub-gate electrode 155s.

[0213] The sub-gate semiconductor layer 152s may comprise one or more materials selected from group III-V materials (e.g., nitrides including Al, Ga, In, B, or combinations thereof). The sub-gate semiconductor layer 152s may comprise the same material as the main gate semiconductor layer 152m. Therefore, the sub-transistor 200_1 of the semiconductor device, according to some implementations, may have normally-off characteristics.

[0214] In the following text, reference will be made to Figure 20 Describes semiconductor devices based on some implementation methods.

[0215] Figure 20 This is a circuit diagram showing a semiconductor device according to some implementation methods.

[0216] Figure 20 Performance based on Figure 1 and Figure 2Various modifications to semiconductor devices are shown in some implementations. Due to... Figure 20 The implementation shown has the same characteristics as Figure 1 and Figure 2 The implementations shown are essentially the same, so their descriptions will be omitted and the differences will be the primary focus. Furthermore, the same reference numerals will be used for the same parts as in the previous implementations.

[0217] Reference Figure 20 Depending on the implementation, the semiconductor device may also include a capacitor element 40.

[0218] Capacitor element 40 can electrically interconnect the main transistor 100 and the sub-transistor 200. The first electrode 401 of capacitor element 40 can be electrically connected to the first terminal of the main transistor 100 and the first terminal of the sub-transistor 200 via a first node N1. For example, the first electrode 401 of capacitor element 40 can be electrically connected to the gate electrode G1 of the main transistor 100 and the second electrode S2 of the sub-transistor 200 via the first node N1. Furthermore, the second electrode 402 of capacitor element 40 can be electrically connected to the second terminal of the main transistor 100 and the second terminal of the sub-transistor 200 via a second node N2. For example, the second electrode 402 of capacitor element 40 can be electrically connected to the second electrode S1 of the main transistor 100 and the gate electrode G2 of the sub-transistor 200 via the second node N2. Capacitor element 40 can electrically interconnect the first node N1 and the second node N2. In some implementations, capacitor element 40 can be connected in parallel to resistor element 30.

[0219] Therefore, either the gate electrode G1 of the main transistor 100 or the second electrode S2 of the sub-transistor 200 can be electrically connected to either the second electrode S1 of the main transistor 100 or the gate electrode G2 of the sub-transistor 200 via the capacitor element 40. The capacitor element 40 can be used to prevent sudden changes in the voltage applied to the gate electrode G1 of the main transistor 100. Therefore, semiconductor devices according to some implementations can be protected, and reliability can be improved.

[0220] Although this specification contains numerous specific implementation details, these should not be construed as limiting the scope of any invention or the scope that may be claimed, but rather as descriptions of features that may be characteristic of a particular implementation of a particular invention. Certain features described in this specification in the context of separate implementations may also be implemented in combination in a single implementation. Conversely, various features described in the context of a single implementation may also be implemented separately in multiple implementations or in any suitable sub-combination. Furthermore, although features may be described above as functioning in certain combinations, in some cases, one or more features from a combination may be removed from that combination, which may be for a sub-combination or a variation thereof.

[0221] Although implementations of this disclosure have been described in conjunction with what are now considered feasible implementations, it will be understood that this disclosure is not limited to the disclosed implementations, but rather is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

[0222] This application claims priority and benefit to Korean Patent Application No. 10-2024-0164535, filed on November 18, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A semiconductor device comprising a main transistor, a daughter transistor, and a resistive element, wherein the resistive element includes a drift resistance region. The main transistor includes: Main channel layer; A barrier layer, on the main channel layer, the barrier layer comprising a material having a band gap different from that of the main channel layer; The main gate electrode is located on the barrier layer. A main gate semiconductor layer is located between the barrier layer and the main gate electrode; as well as The main source electrode and the main drain electrode are located on opposite sides of the main gate electrode and are electrically connected to the main channel layer. The sub-transistor includes: Sub-channel layers are spaced apart from the main channel layer; Sub-gate electrode, on the sub-channel layer, the sub-gate electrode is electrically connected to the main source electrode; and Sub-source and sub-drain electrodes are located on opposite sides of the sub-gate electrode on the sub-channel layer, with the sub-source electrode electrically connected to the main gate electrode. The resistive element electrically connects one of the main gate electrode and the sub-source electrode to the other of the main source electrode and the sub-gate electrode.

2. The semiconductor device according to claim 1, wherein, The resistive element includes a first resistive element that electrically connects the main source electrode and the sub-source electrode, and The first resistive element includes: A first channel pattern includes a first drift resistance region having a two-dimensional electron gas, the first channel pattern comprising the same material as the main channel layer; and The first barrier layer is on the first channel pattern.

3. The semiconductor device according to claim 2, wherein: The resistance of the first drift resistance region of the first channel pattern has a positive temperature coefficient of resistance. The first contact resistance between the main source electrode and the first channel pattern and the second contact resistance between the sub-source electrode and the first channel pattern have negative temperature coefficients of resistance. as well as The sum of the resistance of the first drift resistance region, the first contact resistance, and the second contact resistance is independent of temperature.

4. The semiconductor device of claim 3, wherein the extension length of the first channel pattern is from 1 μm to 10 μm.

5. The semiconductor device of claim 2, wherein the first channel pattern is in electrical contact with the main source electrode and the sub-source electrode.

6. The semiconductor device of claim 2, wherein the first channel pattern comprises the same material as the main channel layer and the sub-channel layer and is integrally formed with the main channel layer and the sub-channel layer.

7. The semiconductor device according to claim 1, wherein: The resistive element includes a second resistive element that electrically connects the main source electrode and the sub-source electrode, and The second resistive element includes: The second channel pattern includes a second drift resistance region having a two-dimensional electron gas, and the second channel pattern is spaced apart from the sub-channel layer; and The second barrier layer is on the second channel pattern.

8. The semiconductor device according to claim 7, further comprising: A protective layer, on the second barrier layer, covers the main gate electrode; An upper protective layer, on which the upper protective layer covers the sub-source electrode; as well as A first connection line, on the upper protective layer, electrically connects the sub-source electrode and the main gate electrode. The first connecting line extends into the upper protective layer, the protective layer and the second barrier layer and makes electrical contact with the second channel pattern.

9. The semiconductor device of claim 8, further comprising a second connection line on the upper protective layer, the second connection line electrically connecting the main source electrode and the sub-gate electrode. The second connecting line extends into the upper protective layer, the protective layer, and the second barrier layer and makes electrical contact with the second channel pattern.

10. The semiconductor device according to claim 1, wherein, The resistive element includes a third resistive element that electrically connects the main gate electrode and the sub-gate electrode, and The third resistive element includes: The third channel pattern includes a third drift resistance region having a two-dimensional electron gas, wherein the third drift resistance region is spaced apart from the main channel layer and the sub-channel layer; and The third barrier layer is on the third channel pattern.

11. The semiconductor device of claim 1, wherein the resistive element comprises a fourth resistive element, the fourth resistive element comprising a fourth channel pattern electrically connecting the sub-source electrode and the sub-gate electrode, the fourth channel pattern being integrally formed with the sub-channel layer. The semiconductor device further includes: A protective layer, on the sub-channel layer, covers the main gate electrode; and A third connection line is provided on the protective layer, which electrically connects the sub-gate electrode and the fourth channel pattern.

12. The semiconductor device according to claim 1, wherein: The barrier layer is on the subchannel layer; and The lower surface of the sub-gate electrode is in contact with the barrier layer.

13. The semiconductor device according to claim 1, further comprising: A protective layer, on the barrier layer, covers the main gate electrode and the sub-gate electrode; An upper protective layer, on which the upper protective layer covers the main source electrode and the sub-source electrode; A first connection line is provided on the upper protective layer, and the first connection line is electrically connected to the sub-source electrode and the main gate electrode. as well as A second connection line is provided on the upper protective layer, and the second connection line electrically connects the main source electrode and the sub-gate electrode.

14. The semiconductor device of claim 13, wherein the main source electrode extends into the protective layer and the barrier layer and is in electrical contact with the main channel layer.

15. The semiconductor device of claim 1, further comprising a partition structure between the main channel layer and the sub-channel layer, the partition structure separating the main channel layer and the sub-channel layer.

16. A semiconductor device comprising a main transistor, a daughter transistor, and a resistive element. The main transistor includes: Main channel layer; A barrier layer, on the main channel layer, the barrier layer comprising a material having a band gap different from that of the main channel layer; The main gate electrode is located on the barrier layer. A main gate semiconductor layer is located between the barrier layer and the main gate electrode; as well as The main source electrode and the main drain electrode are located on opposite sides of the main gate electrode and are electrically connected to the main channel layer. The sub-transistor includes: A sub-channel layer, spaced apart from the main channel layer, the sub-channel layer comprising the same material as the main channel layer; Sub-gate electrode, on the sub-channel layer, the sub-gate electrode is electrically connected to the main source electrode; and Sub-source and sub-drain electrodes are located on opposite sides of the sub-gate electrode on the sub-channel layer, with the sub-source electrode electrically connected to the main gate electrode. The resistive element mentioned above includes: The channel pattern includes a drift resistance region with a two-dimensional electron gas, the channel pattern comprising the same material as the main channel layer; and The second barrier layer, on the channel pattern, and The resistive element electrically connects one of the main gate electrode and the sub-source electrode to the other of the main source electrode and the sub-gate electrode.

17. The semiconductor device of claim 16, further comprising a partition structure between the main channel layer and the sub-channel layer, the partition structure separating the main channel layer and the sub-channel layer. The channel pattern is surrounded by the partition structure.

18. The semiconductor device of claim 16, wherein the extension length of the channel pattern is from 1 μm to 10 μm.

19. The semiconductor device according to claim 16, wherein: The barrier layer is on the subchannel layer; and The lower surface of the sub-gate electrode is in contact with the barrier layer.

20. A semiconductor device comprising a main transistor, a daughter transistor, and a resistive element. The main transistor includes: The main channel layer includes GaN; A barrier layer, on the main channel layer, the barrier layer comprising AlGaN; The main gate electrode is located on the barrier layer. A main gate semiconductor layer is located between the barrier layer and the main gate electrode, and the main gate semiconductor layer comprises GaN doped with p-type impurities; as well as The main source electrode and the main drain electrode are located on opposite sides of the main gate electrode, and are electrically connected to the main channel layer. The sub-transistor includes: A sub-channel layer, spaced apart from the main channel layer, wherein the sub-channel layer comprises GaN; Sub-gate electrode, on the sub-channel layer, the sub-gate electrode is electrically connected to the main source electrode; and Sub-source and sub-drain electrodes are located on opposite sides of the sub-gate electrode on the sub-channel layer, with the sub-source electrode electrically connected to the main gate electrode. The resistive element mentioned above includes: A first channel pattern, situated between the sub-source electrode and the main source electrode, comprises GaN; and A first barrier layer, on the first channel pattern, includes AlGaN. The first side of the first channel pattern is in electrical contact with the sub-source electrode, and the second side of the first channel pattern is in electrical contact with the main source electrode.

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