Metal film stripping process and device
By combining pulsed air jet technology and a cooling device, the problems of long metal film peeling time and substrate damage are solved, achieving efficient and low-cost metal film peeling and improving process controllability and peeling effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SANHE JULI (SUZHOU) SEMICON EQUIP CO LTD
- Filing Date
- 2026-02-05
- Publication Date
- 2026-05-19
AI Technical Summary
Existing metal film stripping processes are time-consuming and pose safety risks. They are difficult to efficiently strip metal films such as copper, gold, titanium, nickel, silver, platinum, and chromium, and can damage the substrate.
The pulsed airflow jet technology utilizes steam or a combination of steam and droplets to separate the metal film from the photoresist pattern layer by controlling the pulse frequency and jet angle. Combined with a cooling device and an angle adjustment device, the stripping efficiency is improved and the substrate is protected.
This method enables efficient removal of metal films in a short time, reducing costs, avoiding substrate damage, and improving process controllability and removal efficiency.
Smart Images
Figure CN122069947A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing technology, specifically to a metal film stripping process and apparatus. Background Technology
[0002] In semiconductor manufacturing processes, metal patterns are commonly used to create device leads and electrodes. These metal patterns are typically formed using photolithography followed by wet or dry etching. However, some metals (such as copper, gold, titanium, nickel, silver, platinum, and chromium) are difficult to etch using conventional wet or dry etching methods, and the chemicals required to etch these metal patterns can corrode other parts of the semiconductor device. Therefore, lift-off processes are often used to create these metal patterns to serve as leads or electrodes for semiconductor devices.
[0003] The lift-off process involves spin-coating one or more layers of photoresist onto the surface of a substrate to which a metal pattern is to be formed. By subjecting the substrate to different exposure and development methods, the desired photoresist pattern is formed. Then, using this photoresist as a mask, metal films that are disconnected from each other are formed on the photoresist and substrate surfaces through metal sputtering or evaporation. Finally, a stripping solution removes the photoresist and the metal film on its surface, while the metal film in direct contact with the substrate at the photoresist space is retained, thereby forming the desired metal lead or electrode pattern.
[0004] Currently, the metal film is usually removed by soaking in a stripping solution, but soaking in the stripping solution takes too long and poses operational and safety risks.
[0005] Therefore, there is an urgent need for a metal film stripping process and device that has high stripping efficiency and does not damage the substrate. Summary of the Invention
[0006] The technical problem to be solved by this application is to provide a metal film stripping process and apparatus with high stripping efficiency and no damage to the substrate.
[0007] According to a first aspect of the embodiments of this application, a metal film peeling process is provided, comprising:
[0008] A substrate with a metal film layer and a photoresist pattern layer is provided. The metal film layer is located on the upper surface of the photoresist pattern layer, and the metal film layer has a metal stripping area located on the upper surface of the photoresist in the photoresist pattern layer. In the stripping process, a pulsed airflow is sprayed onto the surface of the metal stripping zone until the metal film layer in the metal stripping zone separates from the upper surface of the photoresist pattern layer. The pulsed airflow is steam or a two-fluid mixture of steam and droplets.
[0009] In one embodiment, a pulsed airflow is injected onto the surface of the metal stripping zone, including: The stripping process is divided into multiple time segments, and pulsed airflow is injected onto the surface of the metal stripping zone at different pulse frequencies in each time segment.
[0010] In one implementation, the multiple timing segments include an initial infiltration phase and a later separation phase, with the pulse frequency of the separation phase being higher than that of the infiltration phase.
[0011] In one embodiment, multiple time segments are divided into a water film formation stage, a water film permeation stage, and a separation stage according to their time sequence; the water film formation stage and the separation stage use steam as a pulsed airflow; the water film permeation stage uses steam as a pulsed airflow, and the pulse frequency of the separation stage is higher than that of the water film formation stage and the water film permeation stage.
[0012] In one embodiment, a pulsed airflow is injected onto the surface of the metal stripping zone, including: The interface state between the metal film layer and the photoresist pattern layer is detected in real time. When there is a gap at the interface between the metal film layer and the photoresist pattern layer, the pulse frequency of the pulse airflow is increased from the first frequency to the second frequency until the metal film layer in the metal stripping area separates from the upper surface of the photoresist pattern layer.
[0013] In one embodiment, a pulsed airflow is sprayed onto the surface of the metal stripping zone at a preset angle.
[0014] In one embodiment, the maximum pulse frequency of the pulsed airflow is 10 Cycle / Sec.
[0015] According to a second aspect of the embodiments of this application, a metal film peeling device is provided, comprising: A steam delivery assembly includes a steam pipe and a first valve disposed on the steam pipe, the inlet end of the steam pipe being connected to a steam source; A droplet delivery assembly includes a liquid conduit and a second valve disposed on the liquid conduit, the inlet end of which is used to connect to a liquid source; The steam gun is connected to the outlet end of the steam pipe and the outlet end of the liquid pipe, respectively. The control system, connected to the first valve and the second valve, is used to control the opening and closing of the first valve and the second valve, so that the steam gun sprays a pulsed airflow onto the surface of the metal stripping zone. The pulsed airflow is steam or a steam-liquid mixture formed by the combination of steam and droplets.
[0016] In one embodiment, the metal film stripping device further includes a cooling device disposed on a steam gun.
[0017] Specifically, the cooling device can be a pipe for supplying cooling medium, extending axially along the steam gun and fitted onto it, and connected to a source of cooling medium. The cooling medium can be coolant or cooling air.
[0018] In one embodiment, the metal film stripping device further includes a accumulator steam cylinder connected to a steam pipe between the first valve and the steam source.
[0019] In one embodiment, the metal film stripping device further includes an angle adjustment device and a position adjustment device connected to a steam gun. The angle adjustment device is used to drive the steam gun to rotate and adjust the angle between the steam gun and the surface of the metal stripping area. The position adjustment device is used to drive the steam gun to move in a plane parallel to the upper surface of the substrate.
[0020] Compared with the prior art, the beneficial effects of this application are as follows: (1) This application uses pulsed airflow to impact the metal stripping area on the substrate surface, which can increase the pressure of the airflow impact in a short time, so as to generate a large shear force and eddy current effect at the interface between the metal film layer and the photoresist pattern layer in the metal stripping area, thereby separating the metal film layer from the photoresist pattern layer, improving the stripping efficiency, effectively stripping and removing the metal film layer in the metal stripping area; and the pulsed airflow is supplied in the form of pulses, which can also reduce the amount of steam used and reduce costs. (2) This application divides the stripping process into multiple time segments. Initially, a lower pulse frequency is used to spray pulsed airflow onto the surface of the metal stripping layer to avoid excessive impact pressure that could damage the substrate. When a gap is formed between the metal film and the photoresist pattern area, a higher pulse frequency is used to impact the metal film. This breaks the water film at the interface between the metal film and the photoresist pattern area, thereby rapidly widening the gap between the metal film and the photoresist pattern layer to complete the stripping of the metal film and improve the stripping efficiency. This application improves the stripping efficiency and stripping effect while protecting the substrate by controlling the pulse frequency. (3) The metal film stripping device involved in this application avoids overheating of the internal components of the steam gun by setting a cooling device on the steam gun, thus extending the life of the device. At the same time, it also allows the metal film stripping process to use higher energy steam parameters, thereby further improving the stripping efficiency. Attached Figure Description
[0021] Figure 1 This is a schematic diagram illustrating the parameters of a metal film peeling process according to an exemplary embodiment.
[0022] Figure 2 This is a schematic diagram of parameters for each stage of a metal film stripping process according to another exemplary embodiment.
[0023] Figure 3 This is a schematic diagram of parameters for each stage of a metal film stripping process according to another exemplary embodiment.
[0024] Figure 4This is a schematic diagram of a metal film peeling device according to an exemplary embodiment.
[0025] Figure 5 This is a schematic diagram of a substrate with a metal film layer and a photoresist pattern layer.
[0026] The meanings of the labels in the attached figures are as follows: 1. Steam source, 2. Liquid source, 3. First valve, 4. Steam gun, 5. Cooling device, 6. Pressurized steam cylinder, 7. Second valve, 100. Substrate, 101. Photoresist pattern layer, 102. Metal film layer, 102a. Metal stripping area. Detailed Implementation
[0027] Unless otherwise defined, the technical or scientific terms used in this specification and claims shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. Specific embodiments of this application will be described below in conjunction with the accompanying drawings. It should be noted that, in order to provide a concise description, this specification cannot exhaustively describe all features of the actual embodiments. Without departing from the spirit and scope of this application, those skilled in the art can modify and substitute the embodiments of this application, and the resulting embodiments are also within the protection scope of this application.
[0028] To address the problems existing in the prior art, this application provides a metal film stripping process and apparatus with high stripping efficiency and no damage to the substrate.
[0029] In one specific embodiment, a metal film peeling process is provided, comprising: like Figure 5 As shown, a substrate 100 is provided with a metal film layer 102 and a photoresist pattern layer 101. The metal film layer 102 is located on the upper surface of the photoresist pattern layer 101, and the metal film layer 102 has a metal stripping region 102a located on the upper surface of the photoresist in the photoresist pattern layer 101. In the stripping process, a pulsed airflow is sprayed onto the surface of the metal stripping area 102a until the metal film layer 102 in the metal stripping area 102a separates from the upper surface of the photoresist pattern layer 101. The pulsed airflow is steam or a steam-droplet combination fluid.
[0030] Combination Figure 1 , Figure 5As shown, this embodiment controls the pulsed airflow to impact the metal film layer 102 on the substrate surface, which can increase the impact pressure in a short time and improve the peeling effect. Furthermore, the pulsed airflow can reduce the amount of material transported, thus lowering costs. The pulsed airflow is steam or a combination of steam and droplets. In this embodiment, a steam-fluid mixture is used. The thermal energy of the steam-fluid softens and expands the interface between the photoresist pattern layer 101 and the metal film layer 102 at the metal peeling area 102a. As the droplets impact, gaps are created in the metal peeling area 102a, and a water film forms within these gaps. Under the continuous pulsed impact of the steam-fluid on the water film, the gaps gradually widen, eventually peeling off the metal film layer 102. In other words, this embodiment uses a pulsed form to increase the pressure of the steam-fluid in a short time, generating strong shear force and eddy current effects between the metal film layer 102 and the photoresist pattern layer 101 in the metal peeling area 102a, thereby improving the peeling effect and effectively peeling off and removing the metal film layer 102 from the metal peeling area 102a. The steam is obtained from high-temperature pure water and does not contain any acidic or alkaline chemical liquids. In this embodiment, the pulsed airflow only provides impact force to the substrate 100 without introducing a chemical reaction, thus causing no damage to the substrate 100 and further improving the quality.
[0031] In one specific embodiment, based on the state of the metal stripping region 102a during the stripping process, the state at the interface between the metal film layer 102 and the photoresist pattern layer 10 can be detected in real time for judgment and division. Alternatively, the time sequence can be divided by the stripping process time, that is, the separation process between the metal film layer 102 and the upper surface of the photoresist pattern layer 10 is divided into multiple stripping stages, and each stripping stage sprays pulsed airflow onto the surface of the metal stripping region 102a with a different pulse frequency. In this embodiment, the pulse frequency is adjusted according to the state of the metal stripping region 102a to improve the stripping effect of the metal film layer 102.
[0032] like Figure 2As shown, in one specific embodiment, the stripping stage is divided into two stages based on timing: an initial penetration stage and a later separation stage. The pulse frequency of the separation stage is controlled to be higher than that of the penetration stage. The penetration stage involves forming a water film on the surface of the metal film layer 102, allowing the water film to penetrate into the gap between the metal film layer 102 and the photoresist pattern layer 101 in the metal stripping area 102a. The separation stage is the process of stripping the metal film layer 102a. First, a vapor-fluid mixture of 100 ms pulse duration and 5 ms pulse interval is sprayed onto the surface of the metal stripping area 102a at a pulse frequency of 5 ms / sec. This spray impacts the metal film layer 102, creating a gap between the metal stripping area 102a and the photoresist pattern layer 101 to form a water film. In this embodiment, the first preset time is 1 s. Then, the pulse frequency is increased to 6.67 ms / sec, i.e., the pulse duration is 100 ms and the pulse interval is 50 ms. A vapor-fluid mixture of 100 ms pulse duration and 5 ms pulse interval is sprayed onto the surface of the metal stripping area at a pulse frequency of 5 ms. This sprays the droplets in the vapor-fluid mixture rapidly impact the metal film, quickly widening the gap between the metal film layer 102a and the photoresist pattern layer 101, thereby stripping the metal film layer 102 and improving the stripping efficiency. In this embodiment, the second preset time is 1 s.
[0033] It should be noted that the stripping stage is not limited to two stages; it can be divided into one, three, four, or even more stages depending on the actual process or desired effect. In each stripping stage, steam or a steam-fluid mixture can be injected as a pulsed airflow onto the surface of the metal stripping zone 102a, according to process requirements. The first and second preset times can be set according to process requirements, such as 2 seconds, 3 seconds, etc., or set as a fraction of the total stripping process time for each stage, and are not limited to 1 second.
[0034] like Figure 3 As shown, in one specific embodiment, multiple time segments are divided into a water film formation stage, a water film permeation stage, and a separation stage according to time sequence; the water film formation stage and the separation stage use steam as a pulsed airflow; the water film permeation stage uses steam as a pulsed airflow, and the pulse frequency of the separation stage is higher than that of the water film formation stage and the water film permeation stage.
[0035] In this embodiment, a vapor-fluid mixture for a third preset time is first sprayed onto the surface of the metal stripping area 102a at a pulse frequency of 5 Cycles / Sec, impacting the metal film layer 102 and creating a gap between the metal film layer 102 and the photoresist pattern layer 101 to form a water film. Then, maintaining the pulse frequency of 5 Cycles / Sec, vapor is sprayed onto the surface of the metal stripping area 102a for a fourth preset time. This pulsed vapor spraying increases penetration, rapidly forming a water film between the metal film layer 102 and the photoresist pattern layer 101. Next, the pulse frequency is increased to 6.67 Cycles / Sec, and a vapor-fluid mixture for a fifth preset time is sprayed onto the surface of the metal stripping area 102a. This causes droplets in the vapor-fluid mixture to rapidly impact the water film, causing the water film to oscillate and rapidly stripping the metal film layer 102 from the metal stripping area 102a, thus improving the stripping efficiency. In this embodiment, the third, fourth, and fifth preset times are all 1 second.
[0036] It should be noted that the third, fourth, and fifth preset times can be set according to process requirements, and can be the same or different, and are not limited to 1 second.
[0037] In one specific embodiment, a pulsed airflow is injected onto the surface of the metal stripping zone, including: The interface state between the metal film layer 102 and the photoresist pattern layer 101 is detected in real time. When there is a gap at the interface between the metal film layer 102 and the photoresist pattern layer 101, the pulse frequency of the pulse airflow is increased from the first frequency to the second frequency until the metal film layer 102 in the metal stripping area 102a separates from the upper surface of the photoresist pattern layer 101.
[0038] Specifically, at the start of the stripping process, a low-frequency pulsed airflow acts on the surface of the metal stripping area 102a. The main purpose of this stage is to facilitate the permeation of vapor in the pulsed airflow to the interface between the metal film layer 102 and the photoresist pattern layer 101 without generating excessive instantaneous impact force, thus avoiding damage to the substrate 100 or destruction of the pattern structure due to stress concentration or sudden pressure increase. After an initial micro-gap is formed between the metal film layer 102 and the photoresist pattern layer 101 due to the pulsed airflow, a water film forms at the interface with the impact of the pulsed airflow. This can be detected in real time (e.g., by SEM inspection) or set sequentially according to the process time, and the system can switch to a high-frequency pulsed airflow mode based on the changes at the interface. The high-frequency pulsed airflow can create a high-frequency impact on the water film at the interface within the gap, using the fluid breaking effect to cause the water film to rupture rapidly. This process can significantly reduce the interface adhesion force, and at the same time, the dynamic pressure of the pulsed airflow can rapidly expand the gap, causing the metal film layer 102 to be completely stripped from the photoresist pattern layer 101, thereby greatly improving the overall stripping efficiency and process controllability.
[0039] Combination Figure 1 , Figure 5 As shown, in one specific embodiment, the pulsed airflow is sprayed onto the surface of the metal stripping zone 102a at a preset angle.
[0040] In this embodiment, the spray angle can be adjusted according to the photoresist structure, metal film characteristics, and the need for protection of the substrate 100 and the pattern. For example, to obtain greater shear force and peeling efficiency, the spray angle can be adjusted to 30°-60° with respect to the surface of the substrate 100, which can generate stronger shear force, facilitating the peeling of the metal film layer 102, and is especially suitable for stubborn residues. To be suitable for fine structures and avoid peeling dead corners, the spray angle can be adjusted to 80°-90°, so that the impact force is uniformly downward, ensuring that the photoresist pattern layer 101 with complex patterns is covered by the vapor two fluid, thus guaranteeing the peeling effect.
[0041] In one specific implementation, the pulse airflow signal control is as follows during a stripping process time period: the pulse action time ranges from 50MS to 1000MS, and the maximum pulse frequency is 10 Cycle / Sec. In this embodiment, the pulse action time and pulse interval time can be adaptively adjusted according to process requirements, with a maximum pulse frequency of 10 Cycle / Sec to avoid damage to the substrate.
[0042] like Figures 4-5 As shown, according to a second aspect of the embodiments of this application, a metal film peeling device is provided, comprising: A steam conveying assembly includes a steam pipe and a first valve 3 disposed on the steam pipe, the inlet end of the first valve 3 being connected to a steam source 1; The droplet delivery assembly includes a liquid passage pipe and a second valve 7 disposed on the liquid passage pipe, the inlet end of which is used to connect to the liquid source 2; Steam gun 4 is connected to the outlet end of the steam pipe and the outlet end of the liquid pipe, respectively. The control system, connected to the first valve 3 and the second valve 7, is used to control the opening and closing of the first valve 3 and the second valve 7, so that the steam gun 4 sprays a pulsed airflow onto the surface of the metal stripping zone. The pulsed airflow is steam or a steam-liquid mixture formed by the combination of steam and droplets.
[0043] It should be noted that the steam in steam source 1 is obtained from high-temperature pure water, which does not contain any acidic or alkaline chemical liquids. In this embodiment, the pulsed airflow only provides impact force to the substrate 100 without introducing a chemical reaction, thus causing no damage to the substrate 100 and further improving the quality.
[0044] In this embodiment, during the metal film stripping process, the control system first opens the first valve 3 and the second valve 7 to deliver droplets and steam to the steam gun 4 at a pulse frequency of 5 Cycle / Sec. This causes the steam gun 4 to spray a steam-droplet mixture onto the surface of the metal stripping area 102a, impacting the metal film layer 102 and creating a gap between the metal film layer 102 and the photoresist pattern layer 101, forming a water film. The second valve 7 is then closed, and the first valve 3 maintains a pulse frequency of 5 Cycle / Sec to spray steam onto the surface of the metal stripping area 102a. This allows the water film to quickly penetrate into the gap between the metal stripping area 102a and the photoresist pattern layer 101, widening the gap and preventing damage to the substrate 100. The pulse frequency of the first valve 3 and the second valve 7 is then increased to 6.67 Cycle / Sec, and the steam-droplet mixture is sprayed onto the surface of the metal stripping area 102a. This causes the droplets in the steam-droplet mixture to rapidly impact the metal film layer 102, quickly stripping the metal film layer 102 from the metal stripping area 102a and improving the stripping efficiency. Specifically, the first valve 3 and the second valve 7 can be the same or different, and both can be pulse valves, so that the steam gun 4 outputs pulsed airflow.
[0045] Specifically, the steam gun 4 is equipped with a first injection pipe and a second injection pipe. The first injection pipe is connected to the outlet end of the first valve 3 and is used to inject steam. The second injection pipe is connected to the outlet end of the second valve 7 and is used to inject liquid droplets. The first injection pipe and the second injection pipe can be arranged concentrically or side by side, etc., which is not limited here.
[0046] like Figure 4 As shown, in one specific embodiment, the metal film stripping device further includes a cooling device 5, which is disposed on the steam gun 4.
[0047] In this embodiment, by providing a cooling device 5 on the steam gun 4, overheating of the internal components of the steam gun 4 is avoided, the life of the steam gun 4 is extended, and the metal film stripping process can also use higher energy steam parameters.
[0048] Specifically, the cooling device 5 is a pipe for supplying the cooling medium. The pipe extends along the axial direction of the steam gun 4 and is fitted onto the steam gun 4. The pipe is used to connect to the cooling medium source. The cooling medium can be a conventional cooling medium such as coolant or cooling air, and is not limited here.
[0049] In this embodiment, low-cost cooling air is selected as the cooling medium at lower pulse frequencies (e.g., less than or equal to 3 Cycle / Sec), while higher-cost, higher-quality cooling liquid is selected as the cooling medium at higher pulse frequencies (e.g., greater than 3 Cycle / Sec). The appropriate cooling medium source can be selected according to the actual needs of the metal film stripping process to reduce cooling costs.
[0050] like Figure 4As shown, in one specific embodiment, the metal film stripping device further includes a accumulator steam cylinder 6, which is disposed between the first valve 3 and the steam source 1. In this embodiment, the accumulator steam cylinder stores a steam medium at a certain pressure, ensuring a stable supply of steam to the first valve 3.
[0051] During the intermittent period when the first valve 3 is closed, the steam source 1 continuously replenishes the accumulator steam cylinder 6 with steam, maintaining its internal pressure at the set high pressure level. When the first valve 3 opens instantaneously, the high-pressure steam stored in the accumulator steam cylinder 6 rushes towards the first valve 3 and the steam gun 4 through the large-diameter outlet, forming a cycle of storage and re-explosion, ensuring that each pulse carries maximum kinetic energy, thereby significantly improving the impact and stripping effect.
[0052] like Figure 4 As shown, in one specific embodiment, the metal film stripping device further includes an angle adjustment device (not shown in the figure) and a position adjustment device (not shown in the figure) connected to the steam gun. The angle adjustment device is used to drive the steam gun 4 to rotate and adjust the angle between the steam gun 4 and the surface of the substrate 100. The position adjustment device is used to drive the steam gun 4 to move in a plane parallel to the upper surface of the substrate 100.
[0053] In this embodiment, the angle between the steam gun 4 and the surface of the substrate 100 is adjusted by an angle adjustment device. This adjustment is adaptive to the photoresist pattern structure, metal film characteristics, and the protection requirements for the substrate 100 and the pattern, thus meeting different process requirements. The position adjustment device drives the steam gun 4 to move in a plane parallel to the upper surface of the substrate 100, aligning the position of the steam gun 4 with different metal stripping areas 102a on the substrate 100, thereby stripping the metal film layer 102 at the metal stripping area 102a. Specifically, the angle adjustment device can be a rotary motor or other mechanical structure capable of driving the steam gun 4 to swing or rotate; the position adjustment device can be a cross slide, a robotic arm, or other mechanical structure capable of moving the steam gun 4.
[0054] The above description of the embodiments is intended to enable those skilled in the art to understand and apply this application. It will be apparent to those skilled in the art that various modifications can be easily made to these embodiments, and the general principles described herein can be applied to other embodiments without creative effort. Therefore, this application is not limited to the embodiments described herein, and any improvements and modifications made by those skilled in the art based on the disclosure of this application without departing from the scope and spirit of this application are within the scope of this application.
Claims
1. A metal film peeling process, characterized in that, include: A substrate with a metal film layer and a photoresist pattern layer is provided, wherein the metal film layer is located on the upper surface of the photoresist pattern layer, and the metal film layer has a metal stripping region located on the upper surface of the photoresist in the photoresist pattern layer; In the stripping process, a pulsed airflow is sprayed onto the surface of the metal stripping area until the metal film layer in the metal stripping area separates from the upper surface of the photoresist pattern layer, wherein the pulsed airflow is steam or a vapor-droplet combination fluid.
2. The metal film peeling process according to claim 1, characterized in that, Injecting pulsed airflow onto the surface of the metal stripping zone includes: The stripping process is divided into multiple time segments, and pulsed airflow is injected onto the surface of the metal stripping zone at different pulse frequencies in each time segment.
3. The metal film peeling process according to claim 2, characterized in that, The multiple time segments include an initial infiltration phase and a later separation phase, and the pulse frequency of the separation phase is higher than that of the infiltration phase.
4. The metal film peeling process according to claim 2, characterized in that, The multiple time segments are divided into a water film formation stage, a water film permeation stage, and a separation stage according to time sequence; the water film formation stage and the separation stage use steam as a pulsed airflow; the water film permeation stage uses steam as a pulsed airflow, and the pulse frequency of the separation stage is higher than that of the water film formation stage and the water film permeation stage.
5. The metal film peeling process according to claim 1, characterized in that, Injecting pulsed airflow onto the surface of the metal stripping zone includes: The interface state between the metal film layer and the photoresist pattern layer is detected in real time. When there is a gap at the interface between the metal film layer and the photoresist pattern layer, the pulse frequency of the pulse airflow is increased from the first frequency to the second frequency until the metal film layer in the metal stripping area separates from the upper surface of the photoresist pattern layer.
6. A metal film peeling process according to any one of claims 1-5, characterized in that, The pulsed airflow is sprayed onto the surface of the metal stripping area at a preset angle.
7. A metal film peeling process according to any one of claims 1-5, characterized in that, The maximum pulse frequency of the pulsed airflow is 10 Cycle / Sec.
8. A metal film peeling device, characterized in that, The metal film peeling process applicable to any one of claims 1-7 includes: A steam delivery assembly includes a steam pipe and a first valve disposed on the steam pipe, wherein the inlet end of the steam pipe is used to connect to a steam source; A droplet delivery assembly includes a liquid conduit and a second valve disposed on the liquid conduit, wherein the inlet end of the liquid conduit is used to connect to a liquid source; A steam gun is connected to the outlet end of the steam pipe and the outlet end of the liquid pipe, respectively. The control system, connected to the first valve and the second valve, is used to control the opening and closing of the first valve and the second valve, so that the steam gun sprays a pulsed airflow onto the surface of the metal stripping zone, the pulsed airflow being steam or a steam-liquid mixture formed by steam and droplets.
9. A metal film peeling device according to claim 8, characterized in that, The metal film stripping device also includes a cooling device, which is mounted on the steam gun.
10. A metal film peeling device according to claim 8, characterized in that, The metal film stripping device also includes a accumulator steam cylinder, which is connected to a steam pipe between the first valve and the steam source.
11. A metal film peeling device according to claim 8, characterized in that, The metal film stripping device further includes an angle adjustment device and a position adjustment device connected to the steam gun. The angle adjustment device is used to drive the steam gun to rotate and adjust the angle between the steam gun and the surface of the metal stripping area. The position adjustment device is used to drive the steam gun to move in a plane parallel to the upper surface of the substrate.