Semiconductor device measurement method and system thereof

Abstract

The invention discloses a semiconductor device measuring method and a system thereof. The semiconductor device measuring method is used for measuring the distance height between a semiconductor device and a substrate, the semiconductor device is provided with a metal layer and a plurality of output ends connected with the metal layer, and the output ends are connected to the substrate. The semiconductor device measuring method comprises the following steps: measuring a first height between the top surface of the semiconductor device and the substrate; measuring the thickness of a semiconductor layer in the semiconductor device based on infrared light to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer; according to the first height, the second height and the thickness of the metal layer, the interval height is obtained, and the interval height is the interval between the bottom face of the metal layer and the substrate.

Description

Technical Field

[0001] This invention relates to a semiconductor device measurement method and system, and more particularly to a semiconductor device measurement method and system that involves measuring the chip structure dimensions before filling with an appropriate amount of adhesive. Background Technology

[0002] In the flip chip process, a chip is bonded to a substrate using multiple solder balls, with a vertical gap between the substrate and the chip. An underfill is then placed between the chip and the substrate to increase adhesion and act as a buffer against thermal expansion.

[0003] When there is too much primer, it may overflow or even cover the top surface of the chip. When there is too little primer, it will not effectively improve the adhesion between the chip and the substrate. Therefore, the amount of primer to be applied needs to be calculated.

[0004] However, existing technologies are prone to errors in chip thickness. Although the manufactured chips are all within a certain thickness range, there are still errors. This is because the chip thickness itself is affected by the grinding process, and its thickness cannot be precisely determined. Consequently, the standoff height (SOH) between the chip and the substrate cannot be precisely determined either. As chip structures become increasingly refined, even micron-level errors have a significant impact on the amount of primer applied.

[0005] Therefore, how to accurately control the filling amount of the primer by improving the measurement procedure, and overcome the defects of insufficient or excessive primer, has become one of the important issues to be solved in this technical field. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to provide a semiconductor device measurement method and system that addresses the shortcomings of the prior art.

[0007] To address the aforementioned technical problems, one technical solution adopted by the present invention is to provide a semiconductor device measurement method for measuring the spacing height between a semiconductor device and a substrate. The semiconductor device has a metal layer and multiple output terminals connected to the metal layer, and the output terminals are connected to the substrate. The semiconductor device measurement method includes: measuring a first height between the top surface of the semiconductor device and the substrate; measuring the thickness of the semiconductor layer within the semiconductor device based on infrared light to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer; and obtaining the spacing height based on the first height, the second height, and the thickness of the metal layer, wherein the spacing height is the spacing between the bottom surface of the metal layer and the substrate.

[0008] To address the aforementioned technical problems, another technical solution adopted by the present invention is to provide a semiconductor device measurement system for measuring the spacing height between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the output terminals are connected to the substrate. The semiconductor device measurement system includes a stage, a measuring device, and an analyzing device. The stage is used to support the substrate and the semiconductor device. The measuring device is configured to measure a first height between the top surface of the semiconductor device and the substrate, and to measure the thickness of the semiconductor layer within the semiconductor device based on infrared light to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer. The analyzing device is configured to obtain the spacing height based on the first height, the second height, and the thickness of the metal layer, wherein the spacing height is the spacing between the bottom surface of the metal layer and the substrate.

[0009] One of the beneficial effects of the present invention is that the semiconductor device measurement method and system provided by the present invention can overcome the problem of excessive or insufficient filling of the base adhesive due to individual differences in chip structure by using the technical solutions of "obtaining the spacing height between the substrate and the metal layer" and "calculating the estimated amount of filler based on the spacing height and the number of multiple output terminals".

[0010] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Attached Figure Description

[0011] Figure 1 This is a functional block diagram of a semiconductor device measurement system according to an embodiment of the present invention.

[0012] Figure 2This is a schematic diagram of the structure of the semiconductor device measurement system according to an embodiment of the present invention; it is also a schematic diagram of the usage state of step S102 of the semiconductor device measurement method.

[0013] Figure 3 This is a flowchart illustrating the steps of a semiconductor device measurement method according to an embodiment of the present invention.

[0014] Figure 4 This is a schematic diagram of the usage state of step S104 of the semiconductor device measurement method according to an embodiment of the present invention.

[0015] Figure 5 This is a schematic diagram of the usage state of step S110 of the semiconductor device measurement method according to an embodiment of the present invention.

[0016] Figure label:

[0017] 1: Substrate; 10: Top surface; 2: Semiconductor device; 20: Bottom surface; 21: Top surface; 3: Metal layer; 30: Top surface; 31: Bottom surface; 4: Output terminal; A1-A3: Top image; D1: First height; D2: Second height; H: Spacing height; G: Undercoat; P: Reference position; X1-X3: Depth; Z: Semiconductor device measurement system; Z1: Stage; Z2: Measuring device; Z3: Analyzing device; Z4: Filling device. Detailed Implementation

[0018] The following specific embodiments illustrate the implementation of the "Semiconductor Device Measurement Method and System" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions, as stated in advance. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention. In addition, the term "or" used herein should, as appropriate, include any combination of any one or more of the associated listed items.

[0019] Please see Figures 1 to 5The figures above are a functional block diagram of the semiconductor device measurement system according to an embodiment of the present invention, a structural schematic diagram of the semiconductor device measurement system, a flowchart of the steps of the semiconductor device measurement method, a schematic diagram of the usage state of step S104 of the semiconductor device measurement method, and a schematic diagram of the usage state of step S110 of the semiconductor device measurement method. As shown in the figures above, an embodiment of the present invention provides a semiconductor device measurement system Z for measuring the distance height between a semiconductor device 2 and a substrate 1. The semiconductor device measurement system Z includes a stage Z1, a measuring device Z2, and an analysis device Z3.

[0020] Cooperate Figure 1 and Figure 2 As shown, the stage Z1 can be used to support the substrate 1 and the semiconductor device 2. The semiconductor device 2 may have a metal layer 3 and multiple output terminals 4 connected to the metal layer 3, and the output terminals 4 are connected to the substrate 1. For example, the stage Z1 may be a uniaxial or multiaxial movable stage device. The substrate 1 may be a circuit board (PCB) or other type of carrier board. The semiconductor device 2 may be an electronic component (e.g., flip-chip, but not limited thereto). The metal layer 3 may be disposed on the bottom surface 20 of the semiconductor device 2 and serve as the circuit output layer of the semiconductor device 2. The wiring method of the metal layer 3 is not limited to fan-in or fan-out. The output terminals 4 may be solder balls or other conductive components with the same characteristics.

[0021] Next, in coordination Figure 1 and Figure 2 As shown, the measuring device Z2 can measure a first height D1 between the top surface 21 of the semiconductor device 2 and the substrate 1, and measure the thickness of the semiconductor layer within the semiconductor device 2 based on infrared light to obtain a second height D2 between the top surface 21 of the semiconductor device 2 and the top surface 30 of the metal layer 3. In one embodiment, the measuring device Z2 can be a camera, rangefinder, or other non-contact optical ranging sensing device, which can measure the height (also called distance, i.e., the first height D1) between the top surface 21 of the semiconductor device 2 and the top surface 10 of the substrate 1 using methods such as triangulation, phase measurement, or stereo vision. In one embodiment, the measuring device Z2 includes a measuring device that provides short-wave infrared light or near-infrared light, such as a laser displacement sensing device or a film thickness measuring device. In one embodiment, the measuring device Z2 includes an infrared image acquisition device configured to acquire an image of the top of the metal layer 3 to obtain the second height D2. The measuring device Z2 can be suspended on one side of the stage Z1, for example, above the stage Z1, but is not limited thereto.

[0022] Next, in coordination Figure 1As shown, the analysis device Z3 can be configured to obtain the pitch height H based on the first height D1, the second height D2, and the thickness of the metal layer 3, wherein the pitch height H is the distance between the bottom surface 31 of the metal layer 3 and the substrate 1. For example, the analysis device Z3 can be an electronic device, such as a computer or other electronic device with computing functions. The analysis device Z3 can estimate the amount of filler between the semiconductor device 2 and the substrate 1 based on the area of ​​the semiconductor device 2, the number of output terminals 4, and the pitch height.

[0023] Furthermore, the semiconductor device measurement system Z of the present invention also includes a filler device Z4. The filler device Z4 can be configured to fill a predetermined amount of adhesive between the metal layer 3 and the substrate 1 according to an estimated filler amount. For example, in conjunction with... Figure 4 As shown, the glue filling device Z4 can be disposed adjacent to the stage Z1 and electrically connected to the analysis device Z3. The glue filling device Z4 can be a uniaxial or multiaxial movable glue filling device.

[0024] It is worth noting that although the concept of the semiconductor device measurement method of the present invention has been explained in the process of describing the semiconductor device measurement system Z of the present invention, for the sake of clarity, a detailed flowchart is shown below.

[0025] Please refer to the following: Figures 1 to 5 The semiconductor device measurement method of the present invention includes the following steps:

[0026] Cooperate Figures 1 to 3 As shown, the first height D1 between the top surface 21 of the semiconductor device 2 and the substrate 1 is measured (step S102).

[0027] Since the top surface 10 of the substrate 1 can be observed from the outer surface of the chip structure, the method for measuring and obtaining the first height D1 is less restricted. For example, the height (also called distance) between the top surface 21 of the semiconductor device 2 and the top surface 10 of the substrate 1 can be determined by triangulation, phase measurement, or stereo vision, etc., or directly measured using a camera, rangefinder, or other non-contact optical ranging sensing device, but the present invention is not limited thereto.

[0028] Furthermore, before step S102, the semiconductor device measurement method of the present invention may also include the following step S100: a stage Z1 is used to support the substrate 1 and the semiconductor device 2. The semiconductor device 2 may have a metal layer 3 and a plurality of output terminals 4 connected to the metal layer 3, and the output terminals 4 are connected to the substrate 1.

[0029] Next, in coordination Figure 1 and Figure 3As shown, the thickness of the semiconductor layer in the semiconductor device 2 is measured by infrared light to obtain the second height D2 between the top surface 21 of the semiconductor device 2 and the top surface 30 of the metal layer 3 (step S104).

[0030] In one embodiment, the measuring device Z2 can be an infrared film thickness measuring device, capable of providing short-wave infrared (SWIR) or near-infrared (NIR) light as the thickness measurement medium. The wavelength of the aforementioned infrared light includes, but is not limited to, ranges from 700 nanometers to 3000 nanometers. SWIR and NIR light are not penetrable through metals and will be reflected by them. This invention can measure the second height D2 between the top surface 21 of the semiconductor device 2 and the top surface 30 of the metal layer 3 by utilizing the penetrability and reflectivity of the infrared beam, based on the material differences between the semiconductor device 2 and the metal layer 3.

[0031] In one embodiment, the measuring device Z2 includes a laser displacement meter for measuring the thickness D2 of the back side of the semiconductor device 2 (i.e., the distance between the bottom surface 20 and the top surface 21).

[0032] Furthermore, step S104 of the semiconductor device measurement method of the present invention may further include the following step: using an image acquisition device to acquire a top image of the metal layer 3 in order to obtain the second height D2. More specifically, the measurement device Z2 includes an image acquisition device that acquires a top image of the metal layer 3 and calculates the target depth within the semiconductor device 2 based on the top image of the metal layer 3 in order to obtain the second height D2.

[0033] In one embodiment, in conjunction with Figure 1 , Figure 3 and Figure 4 As shown, the measuring device Z2 includes an image acquisition device that can adjust the imaging focal length to acquire multiple top images at different predetermined depths, and analyzes these multiple top images at different depths to define the top image with the highest sharpness as a target depth. For example, the measuring device Z2 can adjust the imaging focal length to receive top images A1, A2, and A3 at different depths X1, X2, and X3 respectively; wherein, in actual operation, a predetermined depth can be set first, and a depth range covering the predetermined depth can be selected (e.g., a depth range centered on the predetermined depth), and multiple top images can be acquired within the depth range.

[0034] Next, after acquiring multiple top images at different predetermined depths, the measuring device Z2 can transmit these top images to the analysis device Z3 for analysis. Each top image comprises multiple pixels. By comparing the sharpness of pixels at the same location in each top image, the top image with the highest sharpness can be identified. This top image is imaged onto the measuring device Z2 at the optimal imaging focal length; that is, the top image with the highest sharpness is defined as the target depth. After identifying the target depth, the analysis device Z3 can obtain a second height D2 based on the target depth.

[0035] Next, in coordination Figures 1 to 4 As shown, the spacing height H is obtained based on the first height D1, the second height D2, and the thickness of the metal layer 3 (step S106). The spacing height H can be the distance between the bottom surface 31 of the metal layer 3 and the substrate 1.

[0036] For example, the analysis device Z3 can be electrically connected to the measuring device Z2. The thickness of the metal layer 3 can be estimated based on the process parameters used to form the metal layer 3. When the process parameters are the same, the thickness difference of the metal layer 3 is not significant; alternatively, the analysis device Z3 can pre-store relevant data on the thickness of the metal layer 3. Therefore, after the analysis device Z3 obtains the parameters of the first height D1 and the second height D2, it can calculate the spacing height H by combining these parameters with the thickness parameter of the metal layer 3. The spacing height H can also be the length, height, or diameter of the output terminal 4, but is not limited to these.

[0037] Furthermore, in coordination Figures 1 to 4 As shown, the semiconductor device measurement method of the present invention may further include the following steps: estimating the amount of filler between the semiconductor device 2 and the substrate 1 based on the area of ​​the semiconductor device 2, the number of output terminals 4, and the spacing height H (step S108).

[0038] For example, the analysis device Z3 of the present invention can also pre-store relevant data such as the area (or volume) of the semiconductor device 2, the size (or volume) of the output terminal 4, and the number of output terminals 4. Therefore, after obtaining the pitch height H, the analysis device Z3 can further calculate based on the above data and the pitch height H to estimate the estimated amount of filler between the semiconductor device 2 and the substrate 1.

[0039] Furthermore, in coordination Figures 1 to 5 As shown, the semiconductor device measurement method of the present invention may further include the following step S110: filling a primer G between the metal layer 3 and the substrate 1 according to the estimated filler amount.

[0040] For example, the filler device Z4 can fill a predetermined amount of adhesive into the gap between the metal layer 3 and the substrate 1 based on the estimated filler amount generated by the analysis device Z3. The predetermined amount mainly depends on the area of ​​the substrate 1 and the semiconductor device 2, as well as the number of output terminals 4, and will not be specifically described here.

[0041] Therefore, in order to overcome the problems of excessive or insufficient filling of the primer G in the past, the semiconductor device measurement method and system of the present invention can first obtain the vertical spacing height H between the metal layer 3 and the substrate 1, and then calculate the estimated amount of primer based on the spacing height H and the number of output terminals 4. In this way, the problems of excessive or insufficient primer G causing overflow or insufficient mechanical structure of the semiconductor device 2 can be avoided.

[0042] It is worth mentioning that, in the semiconductor device measurement method of the present invention described above, it is not limited to performing step S102 first and then step S104; step S104 can also be performed first and then step S102. Furthermore, the stage Z1, measuring device Z2, analyzing device Z3, and filling device Z4 of the present invention can be devices or equipment capable of operating independently; and in other optional embodiments, the analyzing device Z3 can also control at least one of the stage Z1, measuring device Z2, and filling device Z4 to operate according to a built-in program or human operation.

[0043] One of the beneficial effects of the present invention is that the semiconductor device measurement method and system provided by the present invention can overcome the problem of excessive or insufficient filling of the base adhesive G due to individual differences in chip structure by using the technical solutions of "obtaining the spacing height H between the substrate 1 and the metal layer 3" and "calculating the estimated amount of filler based on the spacing height H and the number of multiple output terminals 4".

[0044] Furthermore, the semiconductor device measurement method and system of the present invention utilize the characteristic that infrared light beams (short-wave infrared or near-infrared light) can penetrate the semiconductor device 2 but are reflected by the metal layer 3 to emit an infrared light beam as a detection beam. After being reflected by the metal layer 3, the infrared light beam can be received by the measuring device Z2. Next, by performing pixel analysis on the top image, a top image of the top of the metal layer 3 is obtained to further obtain the second height D2 between the top surface 30 of the metal layer 3 and the top surface 21 of the semiconductor device 2. Furthermore, using the first height D1, the second height D2, and the thickness of the metal layer 3, the spacing height H is obtained, and the estimated filler amount between the semiconductor device 2 and the substrate 1 is estimated.

[0045] Furthermore, the semiconductor device measurement method and system of the present invention can obtain multiple top images by adjusting the focal length between the measuring device and the object under test. To define the distance between the reference position P and the bottom surface 20 of the semiconductor device 2, pixel analysis is performed on the top images to find the top image with optimal sharpness. The focal length of the top image is the optimal imaging focal length. After calculation, the distance between the measurement reference position and the bottom surface 20 of the semiconductor device 2 can be obtained, thereby obtaining the spacing between the metal layer 3 and the substrate 1.

[0046] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of protection of the claims of the present invention. Therefore, all equivalent technical changes made based on the content of the present invention specification and drawings are included within the scope of protection of the claims of the present invention.

Claims

1. A method for measuring semiconductor devices, characterized in that, For measuring the distance between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the output terminals are connected to the substrate, the method includes: Measure the first height between the top surface of the semiconductor device and the substrate; The thickness of the semiconductor layer within the semiconductor device is measured using infrared light to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer; and The spacing height is obtained based on the first height, the second height, and the thickness of the metal layer, wherein the spacing height is the distance between the bottom surface of the metal layer and the substrate.

2. The semiconductor device measurement method according to claim 1, characterized in that, The infrared-based measurement step includes providing short-wave infrared or near-infrared light to measure the thickness of the semiconductor layer within the semiconductor device in order to obtain the second height.

3. The semiconductor device measurement method according to claim 1, characterized in that, The infrared light measurement step includes measuring the thickness of the semiconductor layer within the semiconductor device using a laser displacement sensing device or a film thickness measuring device to obtain the second height.

4. The semiconductor device measurement method according to claim 1, characterized in that, The infrared measurement step includes using an image acquisition device to obtain an image of the top of the metal layer in order to obtain the second height.

5. The semiconductor device measurement method according to claim 4, characterized in that, The step of obtaining the top image further includes: Adjust the imaging focal length to obtain multiple top images at different predetermined depths; and Analyze multiple top images to define the top image with the highest sharpness as the target depth.

6. The semiconductor device measurement method according to claim 1, characterized in that, The semiconductor device measurement method further includes the following steps: The estimated filler amount between the semiconductor device and the substrate is estimated based on the area of ​​the semiconductor device, the number of output terminals, and the pitch height.

7. The semiconductor device measurement method according to claim 6, characterized in that, The semiconductor device measurement method further includes the following steps: The primer is filled between the metal layer and the substrate according to the estimated filler amount.

8. A semiconductor device measurement system, characterized in that, For measuring the distance between a semiconductor device and a substrate, wherein the semiconductor device has a metal layer and a plurality of output terminals connected to the metal layer, and the output terminals are connected to the substrate, the system includes: A stage for supporting the substrate and the semiconductor device; A measuring device configured to measure a first height between the top surface of the semiconductor device and the substrate, and to measure the thickness of a semiconductor layer within the semiconductor device based on infrared light, to obtain a second height between the top surface of the semiconductor device and the top surface of the metal layer; and An analysis apparatus configured to obtain the spacing height based on a first height, a second height, and the thickness of the metal layer, wherein the spacing height is the distance between the bottom surface of the metal layer and the substrate.

9. The semiconductor device measurement system according to claim 8, characterized in that, The measuring device includes a laser displacement sensing device or a film thickness measuring device, which measures the thickness of the semiconductor layer within the semiconductor device to obtain the second height.

10. The semiconductor device measurement system according to claim 8, characterized in that, The measuring device includes an image acquisition device configured to acquire an image of the top of the metal layer in order to obtain the second height.

11. The semiconductor device measurement system according to claim 10, characterized in that, The measuring device is configured to adjust the imaging focal length to acquire multiple top images at different predetermined depths, and analyzes the multiple top images to define the top image with the highest sharpness as the target depth.

12. The semiconductor device measurement system according to claim 8, characterized in that, The analysis device estimates the amount of adhesive filler between the semiconductor device and the substrate based on the area of ​​the semiconductor device, the number of output terminals, and the pitch height; wherein the semiconductor device measurement system further includes an adhesive filler configured to fill a predetermined amount of adhesive between the metal layer and the substrate according to the estimated amount of adhesive filler.

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