Manufacturing method of semiconductor package
By forming through electrodes and conductive bumps between semiconductor chips and performing reflow soldering and planarization, the challenge of high integration in semiconductor chip electrical interconnection technology has been solved, achieving precise bonding and stacking, and improving electrical interconnection characteristics and reliability.
Patent Information
- Application Number
- CN202510604262.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-11-15
- Filing Date
- 2025-05-12
- Publication Date
- 2026-05-22
AI Technical Summary
Existing semiconductor chip electrical interconnect technologies are insufficient to achieve precise bonding and stacking for higher integration levels, thus failing to meet the ever-growing demand.
The method involves forming through electrodes and conductive bumps between semiconductor chips and improving electrical connectivity through reflow soldering and planarization processes. This includes forming front conductive bumps on the substrate surface, performing planarization after reflow soldering, and ensuring effective connection between back conductive bumps and front conductive bumps during stacking.
This achieves improved electrical connectivity between semiconductor chips, ensuring precise bonding and stacking, reducing the risk of short circuits between bumps, and improving the reliability and integration of semiconductor packages.