A 3D chip design simulation modeling method and system based on twin technology

By using a 3D chip design simulation modeling method based on twin technology, the problem of multi-physics coupling in 3D chip design was solved, a more accurate simulation model was achieved, the risk of sudden changes in chip degradation rate was reduced, and the accuracy and reliability of the design were improved.

CN122088210BActive Publication Date: 2026-06-26AXD (ANXINDA) MEMORY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
AXD (ANXINDA) MEMORY TECH CO LTD
Filing Date
2026-04-23
Publication Date
2026-06-26

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Abstract

The application relates to the technical field of digital twinning, and discloses a 3D chip design simulation modeling method and system based on twinning technology, which comprises the following steps: acquiring physical field simulation data, performing feature fusion of thermal stress and thermal-electric coupling by solving a thermal expansion vector field to obtain a preliminary mapping relationship; performing nonlinear cumulative effect calculation of dynamic power density according to the preliminary mapping relationship to obtain a final cumulative effect value; adjusting interconnection materials according to the final cumulative effect value to correct an index set; performing deviation quantitative calculation through thermal flow evolution path analysis according to the index set to obtain a thermal resistance degradation deviation matrix; performing Pareto frontier inflection point extraction according to the thermal resistance degradation deviation matrix to obtain a balanced configuration; screening a non-dominated solution cluster that meets a preset critical power threshold according to the balanced configuration to obtain a candidate solution cluster; screening an optimal configuration according to the candidate solution cluster to output a final optimization scheme. The method can reduce the risk of chip degradation rate mutation.
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Citation Information

Patent Citations

  • Multi-physics field coupling simulation method and device for industrial digital twinning

    CN120671453A

  • Generating digital twins of semiconductor manufacturing equipment

    US20240378347A1