Repair method and system for ion implantation, ion implanter and related equipment

Abstract

The invention discloses an ion implantation repairing method and system, an ion implanter and related equipment thereof. The ion implantation repairing method comprises the steps that in response to ion beam abnormity under the condition that a wafer moves along a preset path and direction and ion beam scanning is carried out, an ion beam is interrupted, the preset path is provided with two limiting positions, one limiting position is an initial end position, and the other limiting position is a tail end position; enabling the wafer to continuously move to a preset position along the preset path and the moving direction when the ion beam is interrupted; enabling the wafer to move from a preset position along a preset path and a direction opposite to the moving direction when the ion beam is interrupted, and carrying out the complementary injection in a normal and stable ion beam state. In the process of complementary injection, the wafer moves along the direction opposite to the moving direction when the ion beam is interrupted, so that the injection angle during complementary injection is the same as the original injection angle before the ion injection process is interrupted, the complementary injection meets the requirements of the original ion injection process, and the repairing effect of the ion injection is further improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a repair method and system for ion implantation, an ion implanter and related equipment. Background Technology

[0002] Ion implantation is a material surface modification technology that has flourished and been widely applied internationally over the past 30 years. The basic principle of ion implantation is that an ion beam of a certain energy is incident into the material. The ion beam interacts physically and chemically with the atoms or molecules in the material. The incident ions gradually lose energy and eventually remain in the material, causing changes in the material's surface composition, structure, and properties, thereby optimizing the material's surface properties or obtaining certain new and superior properties.

[0003] However, during the ion implantation process on wafers, various situations often arise (such as arcing caused by charge accumulation or contamination inside the ion implanter), interrupting the implantation process. This necessitates repairing the unimplanted areas after the ion beam resumes normal operation. Currently, ion implantation repair methods still require improvement. Summary of the Invention

[0004] The problem addressed by the embodiments of the present invention is to provide a repair method and system for ion implantation, an ion implanter and related equipment, so as to improve the repair method for ion implantation.

[0005] To address the aforementioned problems, this invention provides a repair method for ion implantation, comprising: responding to an ion beam anomaly occurring while a wafer is moving along a predetermined path and direction and undergoing ion beam scanning, interrupting the ion beam, wherein the predetermined path has two extreme positions, one extreme position being the initial end position of the predetermined path and the other extreme position being the end position of the predetermined path; causing the wafer to continue moving along the predetermined path and the direction of movement when the ion beam was interrupted, reaching a preset position outside the ion beam coverage, wherein the preset position is one of the two extreme positions of the predetermined path; determining the direction of movement of the wafer when the ion beam was interrupted, and obtaining a determination result; after the wafer reaches the preset position, based on the determination result, keeping the wafer at the initial end position, or moving the wafer from the end position to the initial end position; after the wafer reaches the initial end position, turning on the ion beam to restore the ion beam to a normal and stable state; based on the determination result, causing the wafer to start from the preset position and move along the predetermined path and in the opposite direction to the direction of movement when the ion beam was interrupted, and performing repair implantation under normal and stable ion beam conditions.

[0006] Accordingly, this invention also provides an ion implanter, comprising: an ion beam generating device for emitting an ion beam and interrupting the ion beam; a wafer moving device for fixing a wafer and driving the wafer to move along a predetermined path and direction, the predetermined path having two extreme positions, one extreme position being the initial end position of the predetermined path and the other extreme position being the end position of the predetermined path; and a control device including at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to control the ion beam generating device and the wafer moving device to implement the ion implantation repair method described in this invention.

[0007] Accordingly, embodiments of the present invention also provide a computer program product, including computer instructions, which, when executed by a processor, are used to implement the ion implantation repair method described in the embodiments of the present invention.

[0008] Accordingly, embodiments of the present invention also provide a storage medium storing one or more computer instructions, which are used to implement the ion implantation repair method described in the embodiments of the present invention.

[0009] Accordingly, embodiments of the present invention also provide an ion implantation repair system, comprising: an ion beam module, configured to interrupt the ion beam in response to an ion beam anomaly occurring during ion beam scanning while the wafer is moving along a predetermined path and direction; further configured to cause the ion beam generating device to emit an ion beam after the wafer reaches its initial position, and to restore the ion beam to a normal and stable state; and configured to perform re-implantation on the wafer while it is moving along the predetermined path and in the opposite direction to the direction of movement when the ion beam is interrupted; and a wafer movement module, configured to control a wafer movement device to move the wafer along a predetermined path and direction, the predetermined path having two extreme positions, one extreme position being the initial position of the predetermined path, and the other... The extreme position is the end position of the predetermined path; the wafer moving module is also used to, after an ion beam malfunction and interruption, continue to move the wafer along the predetermined path and the direction of movement when the ion beam was interrupted, to reach a preset position that is no longer covered by the ion beam, the preset position being one of the two extreme positions of the predetermined path; and is also used to, after the wafer reaches the preset position, based on a judgment result, keep the wafer at the initial end position, or move the wafer from the end position to the initial end position; and is also used to, starting from the preset position, move the wafer along the predetermined path and in the opposite direction to the direction of movement when the ion beam was interrupted; the judgment module is used to determine the direction of movement of the wafer when the ion beam was interrupted and obtain a judgment result.

[0010] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages:

[0011] In the ion implantation repair method provided in this embodiment of the invention, the predetermined path of the wafer has two extreme positions, one being the initial end position and the other the final end position. In response to an ion beam anomaly during ion beam scanning, after the ion beam is interrupted, the wafer continues to move along the predetermined path and the direction of movement when the ion beam was interrupted, reaching a preset position outside the ion beam coverage. The preset position is one of the two extreme positions of the predetermined path. Starting from the preset position, the wafer moves along the predetermined path and in the opposite direction to the direction of movement when the ion beam was interrupted. Re-implantation is performed under normal and stable ion beam conditions. Because the wafer moves in the opposite direction to the direction of movement when the ion beam was interrupted during the re-implantation process, the unimplanted areas that were not ion-implanted due to the ion beam anomaly are oriented towards the ion beam. This not only achieves re-implantation of the unimplanted areas but also, because the wafer is not rotated 180 degrees, the implantation angle during re-implantation is the same as the original implantation angle before the ion beam interruption. Therefore, the re-implantation of the unimplanted areas meets the requirements of the original ion implantation process, thereby improving the ion implantation repair effect. Attached Figure Description

[0012] Figure 1 This is a flowchart of an embodiment of the ion implantation repair method of the present invention;

[0013] Figure 2 This is a top view schematic diagram of an embodiment of the ion implantation repair method of the present invention, in which the ion beam emission direction and the wafer move along a preset path.

[0014] Figure 3 This is a schematic diagram of each step in an ion implantation repair method according to an embodiment of the present invention, where the preset position is the initial end position;

[0015] Figure 4 This is a schematic diagram of each step in the ion implantation repair method according to another embodiment of the present invention, when the preset position is the end position;

[0016] Figure 5 This is a functional block diagram of an embodiment of the ion implantation repair system of the present invention;

[0017] Figure 6 This is a schematic diagram of the structure of an embodiment of the ion beam generating device of the ion implanter of the present invention;

[0018] Figure 7 This is a hardware structure diagram of an embodiment of the control device for the ion implanter of the present invention. Detailed Implementation

[0019] Currently, ion implantation repair methods still need improvement. This paper analyzes the reasons why ion implantation repair methods need further improvement, using one such method as an example.

[0020] Research has revealed that when an ion beam anomaly occurs during wafer ion beam scanning, the wafer needs to be rotated 180° to re-implant the unimplanted areas. This results in the implantation angle during re-implantation being symmetrical to the original implantation angle before the ion beam interruption. Consequently, the re-implantation of the unimplanted areas does not meet the requirements of the original ion implantation process, leading to poor ion implantation repair results.

[0021] To address the aforementioned technical problems, this invention provides a repair method for ion implantation, comprising: responding to an ion beam anomaly occurring while a wafer is moving along a predetermined path and direction and undergoing ion beam scanning, interrupting the ion beam; the predetermined path having two extreme positions, one extreme position being the initial end position of the predetermined path and the other extreme position being the final end position of the predetermined path; causing the wafer to continue moving along the predetermined path and the direction of movement when the ion beam was interrupted, reaching a preset position outside the ion beam coverage, the preset position being one of the two extreme positions of the predetermined path; determining the direction of movement of the wafer when the ion beam was interrupted, and obtaining a determination result; after the wafer reaches the preset position, based on the determination result, keeping the wafer at the initial end position, or moving the wafer from the final end position to the initial end position; after the wafer reaches the initial end position, turning on the ion beam to restore the ion beam to a normal and stable state; based on the determination result, causing the wafer to start from the preset position and move along the predetermined path and in the opposite direction to the direction of movement when the ion beam was interrupted, and performing repair implantation under a normal and stable ion beam state.

[0022] In the solution disclosed in this embodiment of the invention, since the wafer is moved in the opposite direction to the direction of movement when the ion beam is interrupted during the reimplantation process, the unimplanted areas that have not yet been ion-implanted due to the ion beam anomaly are directed toward the ion beam. This not only achieves reimplantation of the unimplanted areas, but also ensures that the implantation angle during reimplantation is the same as the original implantation angle before the ion beam interruption, since the wafer is not rotated 180 degrees. This allows the reimplantation of the unimplanted areas to meet the requirements of the original ion implantation process, thereby improving the repair effect of ion implantation.

[0023] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0024] Figure 1 This is a flowchart of an embodiment of the ion implantation repair method of the present invention. Figure 2This is a top view schematic diagram of an embodiment of the ion implantation repair method of the present invention, in which the ion beam emission direction and the wafer move along a preset path. Figure 3 This is a schematic diagram of the steps in an ion implantation repair method according to an embodiment of the present invention, where the preset position is the initial end position. Figure 4 This is a schematic diagram illustrating the steps of an ion implantation repair method according to another embodiment of the present invention, where the preset position is the end position. It should be noted that... Figure 3 and Figure 4 The arrows in the diagram indicate the direction of movement of wafer 100 along a predetermined path.

[0025] refer to Figure 1 and in conjunction with references Figures 2 to 4 Step S1: In response to an ion beam anomaly that occurs when the wafer 100 moves along a predetermined path and direction and is scanned by an ion beam, the ion beam 200 is interrupted. The predetermined path has two extreme positions, one of which is the initial end (i.e., start) position of the predetermined path, and the other extreme position is the end (i.e., end) position of the predetermined path.

[0026] The movement of wafer 100 along a predetermined path and direction while undergoing ion beam scanning 200 refers to a global ion implantation process on wafer 100. It should be noted that global ion implantation is configured to implant ions into the entire area of ​​wafer 100. It should also be noted that the starting position of wafer 100 during the first global ion implantation is the initial end position.

[0027] In response to an ion beam 200 malfunction, the ion beam 200 is interrupted to prevent unimplanted areas on wafer 100 from being affected.

[0028] In this embodiment, the predetermined path is a straight path. It should be noted that the predetermined path is a straight path extending along a first direction. As an example, the first direction is the horizontal direction (e.g.,...). Figure 2 (As shown in the Y direction). In other embodiments, the first direction can also be a vertical direction, wherein the horizontal direction and the vertical direction are perpendicular to each other. It should be noted that the emission direction of the ion beam 200 is the second direction X. As an example, the first direction Y and the second direction X are orthogonal.

[0029] In this embodiment, the ion beam 200 does not move during ion implantation; that is, the size and position of the preset coverage area of ​​the ion beam 200 do not change. It should be noted that the size of the ion beam 200 is larger than the diameter of the wafer 100 in the direction parallel to the surface of the wafer 100.

[0030] It is understood that the ion implantation repair method in this embodiment of the invention is implemented using an ion implanter.

[0031] Reference Figure 2 In this embodiment, the ion implanter includes a wafer moving device 115. The wafer 100 is fixed and moved along a predetermined path by the wafer moving device 115 of the ion implanter. Specifically, the wafer moving device 115 includes a chuck 111 for fixing the wafer 100; and a driving component 112 for driving the chuck 111 to move along the predetermined path, thereby moving the wafer 100 via the chuck 111. In this embodiment, the driving component 112 includes a robotic arm 110.

[0032] In this embodiment, based on the monitoring results of the ion beam 200, when the monitoring results indicate that the ion beam 200 is abnormal, the ion beam 200 is interrupted in response to the abnormality, thereby terminating the ion implantation process. By monitoring the ion beam 200 and controlling its interruption based on the monitoring results, it is beneficial to detect abnormalities in the ion beam 200 in a timely manner, thereby further reducing the adverse effects caused by the abnormality of the ion beam 200.

[0033] In this embodiment, the ion implanter also includes a beam monitoring device 210 (such as...). Figure 2 As shown), it is used to monitor the ion beam 200 and obtain monitoring results (such as...). Figure 2 (As shown).

[0034] In other embodiments, the device monitoring whether the ion beam is malfunctioning can be another, such as a low-voltage power supply glitch monitoring device to monitor whether a glitch has occurred in the low-voltage power supply; or a high-voltage power supply glitch monitoring device to monitor whether a glitch has occurred in the high-voltage power supply. By monitoring whether a glitch has occurred in the power supply, it can be determined whether the ion beam is malfunctioning.

[0035] In this embodiment, the ion implanter further includes an ion beam generating device 320 for emitting the ion beam 200 and interrupting the ion beam 200. Specifically, referring to the reference... Figure 6 The ion beam generating apparatus 320 includes: an ion source 300; and an extraction assembly 310 for generating an ion beam 200 based on the ion source 300, wherein the extraction assembly 310 includes an extraction electrode 311. Plasma 301 is generated in the ion source 300. Figure 6 This is a schematic diagram of an embodiment of the ion beam generating device of the ion implanter of the present invention.

[0036] In this embodiment, the ion beam 200 is generated collaboratively by the ion source 300 and the extraction assembly 310. Accordingly, in this embodiment, the step of interrupting the ion beam 200 includes: turning off the input power supply of the extraction electrode 311 (not shown) while keeping the input power supply of the ion source 300 on (not shown). When interrupting the ion beam 200, turning off the input power supply of the extraction electrode 311 while keeping the input power supply of the ion source 300 on helps maintain a stable plasma 301 inside the ion source 300 without forming the ion beam 200. This shortens the time required for the ion beam 200 to reach a stable state after it is turned on (i.e., the input power supply of the extraction electrode 311 is turned on), thereby improving the efficiency of the supplementary injection.

[0037] In this embodiment, the ion implantation repair method further includes: executing step S15 to obtain the position of the wafer 100 when the ion beam 200 is interrupted, as the interruption position. Obtaining the interruption position provides position information for the end of subsequent reimplantation. Specifically, the position of the chuck 111 when the ion beam 200 is interrupted is obtained as the interruption position.

[0038] refer to Figure 1 and in conjunction with references Figures 2 to 4 Step S2: The wafer 100 continues to move along the predetermined path and the direction of movement when the ion beam 200 is interrupted, until it reaches a preset position that is no longer covered by the ion beam 200. The preset position is one of the two extreme positions of the predetermined path. The preset position is the starting position during the re-implantation.

[0039] It is understandable that when performing global ion implantation on wafer 100, if an ion beam 200 malfunction occurs while wafer 100 moves along the preset path from the initial position to the final position, the preset position is the final position; if an ion beam 200 malfunction occurs while wafer 100 moves along the preset path from the final position to the initial position, the preset position is the initial position.

[0040] After the ion beam 200 is interrupted, the wafer 100 continues to move along the predetermined path and the direction of movement when the ion beam 200 was interrupted, until it reaches one of the two extreme positions, so that the predetermined path of the supplementary implantation is the same as the predetermined path of the global ion implantation, avoiding changes to the path configuration of the ion implantation, and combining the supplementary implantation with the original ion implantation (i.e., global ion implantation).

[0041] refer to Figure 1 and in conjunction with references Figures 2 to 4 Step S3: Determine the direction of movement of wafer 100 when ion beam 200 is interrupted, and obtain the determination result.

[0042] Determining the direction of wafer 100 movement when ion beam 200 is interrupted provides a basis for subsequent re-implantation to move wafer 100 in the opposite direction to the direction of movement when ion beam 200 is interrupted.

[0043] In this embodiment, the method for determining the moving direction of the wafer 100 when the ion beam 200 is interrupted includes: determining whether the moving direction of the wafer 100 when the ion beam 200 is interrupted is towards the end position of the predetermined path or determining whether the moving direction of the wafer 100 when the ion beam 200 is interrupted is towards the beginning position of the predetermined path; or, determining whether the moving direction of the wafer 100 when the ion beam 200 is interrupted is away from the beginning position of the predetermined path or determining whether the moving direction of the wafer 100 when the ion beam 200 is interrupted is away from the end position of the predetermined path; or, determining whether the number of ion beam 200 scans when the ion beam 200 is interrupted is an odd number of scans or determining whether the number of ion beam 200 scans when the ion beam 200 is interrupted is an even number of scans; or, determining whether a preset position is the end position or determining whether a preset position is the beginning position.

[0044] In this process, the wafer 100 is moved from the initial end to the final end in an odd-numbered scan, and from the final end to the initial end in an even-numbered scan. Specifically, the first time the wafer 100 moves from the initial end to the final end is the first scan (odd-numbered scan), the first time the wafer 100 moves from the final end to the initial end is the second scan (even-numbered scan), the second time the wafer 100 moves from the initial end to the final end is the third scan (odd-numbered scan), the second time the wafer 100 moves from the final end to the initial end is the fourth scan (even-numbered scan)...

[0045] It should be noted that when wafer 100 moves once along the predetermined path from the initial end to the end, or from the end to the initial end, it is counted as one scan. The number of scans is only related to the number of times wafer 100 moves along the predetermined path, and is not related to whether there is an emitted ion beam 200 during the movement of wafer 100 along the predetermined path.

[0046] Since the two extreme positions are the initial position and the final position, the movement direction of wafer 100 includes a first movement direction from the initial position to the final position and a second movement direction from the final position to the initial position. Therefore, it can be determined by the initial position or the final position. Furthermore, the number of scans (odd or even) is also related to the movement direction of wafer 100; that is, the movement direction of odd-numbered scans is the first movement direction, and the movement direction of even-numbered scans is the second movement direction. Therefore, the movement direction of wafer 100 when the ion beam 200 is interrupted can also be determined by the parity of the number of scans. In addition, the real-time position of chuck 111 is known. Therefore, the movement direction of wafer 100 when the ion beam 200 is interrupted can also be determined by determining whether the preset position is the final position or the initial position. Therefore, using any of the above methods to determine the movement direction of wafer 100 when the ion beam 200 is interrupted facilitates the determination of the movement direction of wafer 100 when the ion beam 200 is interrupted.

[0047] refer to Figure 1 and in conjunction with references Figures 2 to 4 Step S4: After wafer 100 reaches the preset position, based on the judgment result, wafer 100 is kept at the initial end position (e.g., Figure 4 (as shown), or, move wafer 100 from the end position to the initial end position (as shown). Figure 3 (As shown). Position wafer 100 at the initial end position to allow for subsequent adjustment of the ion beam 200.

[0048] In this embodiment, in the step of keeping the wafer 100 at the initial end position or moving the wafer 100 from the end position to the initial end position based on the judgment result, if the judgment result is that the moving direction of the wafer 100 is towards the end position of the predetermined path when the ion beam 200 is interrupted, or if the judgment result is that the moving direction of the wafer 100 is away from the initial end position of the predetermined path when the ion beam 200 is interrupted, or if the judgment result is that the number of ion beam scans when the ion beam 200 is interrupted is an odd number of scans, or if the judgment result is that the preset position is the end position, then the wafer 100 is moved from the end position to the initial end position.

[0049] In this embodiment, in the step of keeping the wafer 100 at the initial end position based on the judgment result, or moving the wafer 100 from the end position to the initial end position, if the judgment result is that the moving direction of the wafer 100 is towards the initial end position of the predetermined path when the ion beam 200 is interrupted, or if the judgment result is that the moving direction of the wafer 100 is away from the end position of the predetermined path when the ion beam 200 is interrupted, or if the judgment result is that the number of ion beam scans when the ion beam 200 is interrupted is an even number of scans, or if the judgment result is that the preset position is the initial end position, then the wafer 100 is kept at the initial end position.

[0050] In other embodiments, step S3 can be executed first, followed by step S2. In other words, based on the determination of the wafer's movement direction when the ion beam is interrupted, it can be determined whether the preset position is the initial or final position in the predetermined path. Based on the determination of the preset position, the wafer can continue moving along the predetermined path and the movement direction when the ion beam is interrupted until it reaches the preset position. It is understood that in this case, the method of determining the wafer's movement direction when the ion beam is interrupted does not include determining whether the preset position is the final position or the initial position.

[0051] Specifically, if the determination result of the wafer's movement direction when the ion beam is interrupted is: the wafer's movement direction is towards the end position of the predetermined path, or the wafer's movement direction is away from the initial position of the predetermined path, or the number of ion beam scans when the ion beam is interrupted is an odd number of scans, then the preset position is the end position; if the determination result of the wafer's movement direction when the ion beam is interrupted is: the wafer's movement direction is towards the initial position of the predetermined path, or the wafer's movement direction is away from the end position of the predetermined path, or the number of ion beam scans when the ion beam is interrupted is an even number of scans, then the preset position is the initial position.

[0052] refer to Figure 1 and in conjunction with references Figures 2 to 4 Step S5: After the wafer 100 is in the initial position, turn on the ion beam 200 to restore the ion beam 200 to a normal and stable state.

[0053] Because when the wafer 100 moves to the initial end position, the components of the wafer moving device 115 (e.g., the robot arm 110 of the wafer moving device 115) used to move the wafer 100 along a predetermined path are in a retracted state (e.g., when the wafer 100 moves to the initial end position). Figure 2 (As shown). Therefore, after the wafer 100 reaches the preset position, based on the judgment result, the wafer 100 is kept at the initial end position, or moved to the initial end position. This helps to avoid the components of the wafer moving device 115 blocking the ion beam 200 during the adjustment of the ion beam 200, thereby ensuring that the adjustment of the ion beam 200 can be carried out normally. Specifically, as shown... Figure 2 As shown, the beam current monitoring device 210 and the ion beam 200 are located on both sides of the wafer moving device 115. The movement of the wafer 100 is achieved by the robot arm 110. If the wafer 100 is at the end position, when adjusting the ion beam 200, the robot arm 110 may affect the ion beam 200 from reaching the beam current monitoring device 210, thereby affecting the adjustment of the ion beam 200. Therefore, the robot arm 110 needs to be retracted, and the wafer 100 needs to be in the initial end position accordingly.

[0054] After the wafer 100 is in the initial position, turning on the ion beam 200 and restoring the ion beam 200 to a normal and stable state means that after the wafer 100 is in the initial position, turning on the ion beam 200 and adjusting the ion beam 200 to restore the ion beam 200 to a normal and stable state.

[0055] Specifically, restoring the ion beam 200 to a normal and stable state includes: turning on the ion beam 200, adjusting the parameters of the ion beam 200 to the specifications before the ion beam 200 was interrupted, and ensuring that the fluctuation range of the ion beam 200 parameters meets the preset requirements. This adjustment method helps reduce the difficulty of restoring the ion beam 200 to a normal and stable state.

[0056] In this embodiment, the step of adjusting the parameters of the ion beam 200 to the specifications before the ion beam 200 was interrupted, and ensuring that the fluctuation range of the ion beam 200 parameters meets the preset requirements, includes one or more of the following parameters: ion energy, ion beam density, ion beam parallelism, and ion beam divergence angle. Adjusting one or more of these parameters helps to further reduce the difficulty of restoring the parameters of the ion beam 200 to the specifications of the ion implantation process before the ion beam 200 was interrupted.

[0057] In one embodiment, such as Figure 3 As shown, when the preset position is the end position, the ion implantation repair method further includes: after restoring the ion beam 200 to a normal and stable state, interrupting the ion beam 200; and after interrupting the ion beam 200, moving the wafer 100 back to the preset position. Interrupting the ion beam 200 after restoring it to a normal and stable state helps avoid unnecessary ion implantation during the process of moving the wafer 100 back to the preset position.

[0058] In this embodiment, based on the monitoring results of the ion beam 200, the ion beam 200 is restored to a normal and stable state, which is beneficial for accurate monitoring of the ion beam 200 and makes the adjustment of the ion beam 200 more effective.

[0059] It is understandable that after the wafer 100 is in the initial position, the ion beam 200 is turned on and restored to a normal and stable state. Since the components of the wafer moving device 115 are avoided from blocking the ion beam 200, the error between the parameters of the monitoring results and the actual parameters of the ion beam 200 is smaller, thus making the adjustment of the ion beam 200 more effective.

[0060] In this embodiment, since the input power supply of the ion source 300 is kept on, the step of turning on the ion beam 200 includes turning on the input power supply of the extraction electrode 311.

[0061] refer to Figure 1 and in conjunction with references Figures 2 to 4 Step S6: Based on the judgment result, the wafer 100 is moved from the preset position along a predetermined path and in the opposite direction to the direction of movement when the ion beam 200 is interrupted, and supplementary implantation is performed under the normal and stable ion beam 200 state.

[0062] It should be noted that the supplementary implantation is configured to perform ion implantation on a local area of ​​wafer 100 (i.e., the area that was not implanted when the ion beam 200 was interrupted).

[0063] During the reimplantation process, the wafer 100 is moved in the opposite direction to the direction in which the ion beam 200 was interrupted. Consequently, the unimplanted region 101 on the wafer 100 that has not yet been ion-implanted due to the ion beam 200 malfunction is oriented towards the ion beam 200. This not only enables the reimplantation of the unimplanted region 101, but also ensures that the implantation angle during reimplantation is the same as the original implantation angle before the ion beam 200 was interrupted, since the wafer is not rotated 180 degrees. This allows the reimplantation of the unimplanted region 101 to meet the requirements of the original ion implantation process, thereby improving the repair effect of ion implantation.

[0064] In this embodiment, during the step of re-implanting the wafer 100 by moving it from a preset position along a predetermined path and in the opposite direction to the direction of movement when the ion beam 200 is interrupted: (e.g.) Figure 3 As shown, when the preset position is the end position, the wafer 100 is moved from the end position along a predetermined path toward the initial end position, so that the ion beam 200 continues to implant ions into the unimplanted region 101 of the wafer 100 until the supplementary implantation of the unimplanted region 101 is completed; as Figure 4 As shown, when the preset position is the initial end position, the wafer 100 is moved from the initial end position along a predetermined path towards the end position, so that the ion beam 200 continues ion implantation into the unimplanted region 101 of the wafer 100 until the supplementary implantation of the unimplanted region 101 is completed. Moving the wafer 100 from the end position or the initial end position along a predetermined path is beneficial to combining supplementary implantation with global ion implantation processes, reducing the modification of existing process technology required for supplementary implantation.

[0065] It should be noted that, as Figure 3 As shown, in one embodiment, when the preset position is the end position, the ion implantation repair method further includes: after restoring the ion beam 200 to a normal and stable state, interrupting the ion beam 200; and after interrupting the ion beam 200, moving the wafer 100 back to the preset position. Correspondingly, as... Figure 3As shown, in the supplementary implantation step, before the wafer 100 moves to the preset coverage area of ​​the ion beam 200, the ion beam 200 is turned on to restore the ion beam 200 to a normal and stable state, so as to provide a process basis for supplementary implantation.

[0066] Specifically, turning on the ion beam 200 before the wafer 100 moves to the preset coverage area of ​​the ion beam 200 and restoring the ion beam 200 to a normal and stable state means turning on the ion beam 200 and keeping it in a normal and stable state (that is, keeping it in the specifications after the ion beam 200 is adjusted).

[0067] Turning on the ion beam 200 before the wafer 100 moves to the preset coverage area of ​​the ion beam 200 provides time for the ion beam 200 to remain in a normal and stable state.

[0068] In this embodiment, the location of the wafer 100 when the ion beam 200 is interrupted is obtained in advance and designated as the interruption location. Accordingly, in the re-implantation step, when the wafer 100 moves to the interruption location, the re-implantation of the unimplanted region 101 of the wafer is completed.

[0069] In this embodiment, the ion beam 200 is interrupted upon completion of supplementary implantation. Interrupting the ion beam 200 upon completion of supplementary implantation eliminates the need to calculate the remaining ion implantation dose before performing supplementary implantation, thereby reducing the difficulty of supplementary implantation. Furthermore, it facilitates integration with existing global ion implantation processes, ensuring the normal operation of subsequent global ion implantation processes and minimizing the impact of supplementary implantation on subsequent global ion implantation processes.

[0070] Specifically, after completing the supplementary implantation and interrupting the ion beam 200, the wafer 100 continues to move along the predetermined path and the direction of movement during the supplementary implantation to another extreme position of the predetermined path, which is beneficial for further integration with the existing global ion implantation process.

[0071] As an example, after performing supplemental implantation, the number of implantations already completed is obtained, and a global ion implantation process is continued to complete the remaining implantations.

[0072] In summary, as Figure 3As shown, in one embodiment, when the preset position is the end position, after the wafer 100 reaches the preset position, the wafer 100 is moved from the end position to the initial end position. After the wafer 100 reaches the initial end position, the ion beam 200 is turned on, allowing the ion beam 200 to return to a normal and stable state. After the ion beam 200 returns to a normal and stable state, the ion beam 200 is interrupted. After the ion beam 200 is interrupted, the wafer 100 is moved back to the end position, and starting from the end position, the wafer 100 moves along a predetermined path and in the opposite direction to the direction of movement when the ion beam 200 is interrupted. Under the normal and stable ion beam 200 state, supplementary implantation is performed (e.g., ...). Figure 3 As shown in the diagram, in the re-implantation step, before the wafer 100 moves to the preset coverage area of ​​the ion beam 200, the ion beam 200 is turned on to restore it to a normal and stable state. Figure 4 As shown, in another embodiment, when the preset position is the initial end position, after the wafer 100 reaches the preset position, the wafer 100 is kept at the initial end position, and the ion beam 200 is turned on to restore the ion beam 200 to a normal and stable state. After the ion beam 200 is restored to a normal and stable state, the wafer 100 is moved from the initial end position along a predetermined path and in the opposite direction to the direction of movement when the ion beam 200 is interrupted. Under the normal and stable ion beam state, supplementary implantation is performed.

[0073] Accordingly, embodiments of the present invention also provide an ion implantation repair system. Figure 5 This is a functional block diagram of an embodiment of the ion implantation repair system of the present invention. (Reference) Figure 5 In conjunction with references 1 to 1 Figure 4In this embodiment, the ion implantation repair system 600 includes: an ion beam module 601, configured to interrupt the ion beam 200 in response to an ion beam 200 anomaly occurring while the wafer 100 is moving along a predetermined path and direction and undergoing ion beam 200 scanning; also configured to cause the ion beam generating device 320 to emit the ion beam 200 after the wafer 100 reaches its initial position, and to restore the ion beam 200 to a normal and stable state; and configured to perform re-implantation on the wafer 200 when the wafer 100 moves along the predetermined path and in the opposite direction to the direction of movement when the ion beam 200 is interrupted; and a wafer movement module 602, configured to control the wafer movement device 115 to move the wafer 100 along a predetermined path and direction, the predetermined path having two extreme positions, one of which is the initial position of the predetermined path. Another extreme position is used as the end position of the predetermined path; the wafer moving module 602 is also used to, after the ion beam 200 malfunctions and is interrupted, to make the wafer 100 continue to move along the predetermined path and the moving direction when the ion beam 200 was interrupted, to reach a preset position that is out of the coverage of the ion beam 200, the preset position being one of the two extreme positions of the predetermined path, and to, after the wafer 100 reaches the preset position, based on the judgment result, keep the wafer 100 at the initial end position, or move the wafer 100 from the end position to the initial end position; and to make the wafer 100 start from the preset position and move along the predetermined path and in the opposite direction to the moving direction when the ion beam 200 was interrupted; the judgment module 603 is used to judge the moving direction of the wafer 100 when the ion beam 200 was interrupted and obtain the judgment result.

[0074] The movement of wafer 100 along a predetermined path and direction while undergoing ion beam scanning 200 refers to a global ion implantation process on wafer 100. It should be noted that global ion implantation is configured to implant ions into the entire area of ​​wafer 100. It should also be noted that the starting position of wafer 100 during the first global ion implantation is the initial end position.

[0075] In response to an ion beam 200 malfunction, the ion beam 200 is interrupted to prevent unimplanted areas on wafer 100 from being affected.

[0076] During the reimplantation process, the wafer 100 is moved in the opposite direction to the direction in which the ion beam 200 was interrupted. Consequently, the unimplanted region 101 on the wafer 100 that has not yet been ion-implanted due to the ion beam 200 malfunction is oriented towards the ion beam 200. This not only enables the reimplantation of the unimplanted region 101, but also ensures that the implantation angle during reimplantation is the same as the original implantation angle before the ion beam 200 was interrupted, since the wafer is not rotated 180 degrees. This allows the reimplantation of the unimplanted region 101 to meet the requirements of the original ion implantation process, thereby improving the repair effect of ion implantation.

[0077] Specifically, the ion beam module 601 includes an interruption module (not shown), an adjustment module (not shown), and a supplementary implantation module (not shown); the wafer movement module 602 includes a first control module (not shown), a second control module (not shown), and a third control module (not shown). More specifically, the interruption module is used to interrupt the ion beam 200 in response to an ion beam 200 anomaly that occurs while the wafer 100 is moving along a predetermined path and direction and performing ion beam 200 scanning. The predetermined path has two extreme positions, one extreme position being the initial end position of the predetermined path, and the other extreme position being the end position of the predetermined path. The first control module is used to enable the wafer 100 to continue moving along the predetermined path and the direction of movement when the ion beam 200 is interrupted, reaching a preset position that is no longer covered by the ion beam 200. The preset position is one of the two extreme positions of the predetermined path. The second control module is used to, after the wafer 100 reaches the preset position, based on a judgment result, either keep the wafer 100 at the initial end position or move the wafer 100 from the end position to the initial end position. The adjustment module is used to activate the ion beam 200 after the wafer 100 is in the initial position, restoring the ion beam 200 to a normal and stable state. The third control module, based on a judgment result, moves the wafer 100 from a preset position along a predetermined path and in the opposite direction to the direction of movement when the ion beam 200 was interrupted. The supplementary implantation module is used to perform supplementary implantation while the wafer 100 is moving along the predetermined path and in the opposite direction to the direction of movement when the ion beam 200 was interrupted, under normal and stable ion beam 200 conditions.

[0078] In this embodiment, the predetermined path is a straight path. It should be noted that the predetermined path is a straight path extending along a first direction. As an example, the first direction is the horizontal direction (e.g.,...). Figure 2 (As shown in the Y direction). In other embodiments, the first direction can also be a vertical direction, wherein the horizontal direction and the vertical direction are perpendicular to each other. It should be noted that the emission direction of the ion beam 200 is the second direction X. As an example, the first direction Y and the second direction X are orthogonal.

[0079] In this embodiment, the ion beam 200 does not move during ion implantation; that is, the size and position of the preset coverage area of ​​the ion beam 200 do not change. It should be noted that the size of the ion beam 200 is larger than the diameter of the wafer 100 in the direction parallel to the surface of the wafer 100.

[0080] It is understood that the ion implantation repair system 600 of this embodiment of the invention is implemented by an ion implanter.

[0081] In this embodiment, the ion implantation repair system 600 further includes: a monitoring module (not shown) for acquiring monitoring results; and an interruption module for interrupting the ion beam 200 in response to the abnormality of the ion beam 200, based on the monitoring results of the ion beam 200, to stop the ion implantation process when the monitoring results indicate that the ion beam 200 is abnormal.

[0082] In this embodiment, the ion implanter further includes an ion beam generating device 320 for emitting the ion beam 200 and interrupting the ion beam 200. Specifically, referring to the reference... Figure 6 The ion beam generating apparatus 320 includes: an ion source 300; and an extraction assembly 310 for generating an ion beam 200 based on the ion source 300, wherein the extraction assembly 310 includes an extraction electrode 311. Plasma 301 is generated in the ion source 300. It should be noted that the ion beam 200 is generated collaboratively by the ion source 300 and the extraction assembly 310, and the extraction assembly 310 includes the extraction electrode 311. An interrupt module is used to turn off the input power supply to the extraction electrode 311 while keeping the input power supply to the ion source 300 on.

[0083] In this embodiment, the ion implantation repair system 600 further includes an interruption location acquisition module, used to acquire the location of the wafer 100 when the ion beam 200 is interrupted, as the interruption location.

[0084] It is understandable that when performing global ion implantation on wafer 100, if an ion beam 200 malfunction occurs while wafer 100 moves along the preset path from the initial position to the final position, the preset position is the final position; if an ion beam 200 malfunction occurs while wafer 100 moves along the preset path from the final position to the initial position, the preset position is the initial position.

[0085] In this embodiment, the determination module 603 determines the moving direction of the wafer 100 when the ion beam 200 is interrupted by: determining whether the moving direction of the wafer 100 is towards the end position of a predetermined path or whether the moving direction of the wafer 100 is towards the beginning position of a predetermined path; or, determining whether the moving direction of the wafer 100 is away from the beginning position of a predetermined path or whether the moving direction of the wafer 100 is away from the end position of a predetermined path; or, determining whether the number of scans of the ion beam 200 when the ion beam 200 is interrupted is an odd number of scans or whether the number of scans of the ion beam 200 when the ion beam 200 is interrupted is an even number of scans; or, determining whether a preset position is the end position or whether a preset position is the beginning position; when When the determination result is that the moving direction of wafer 100 is towards the end position of the predetermined path when ion beam 200 is interrupted, or the moving direction of wafer 100 is away from the initial position of the predetermined path when ion beam 200 is interrupted, or the number of scans of ion beam 200 when ion beam 200 is interrupted is an odd number of scans, or the preset position is the end position, the second control module is used to move wafer 100 from the end position to the initial position; when the determination result is that the moving direction of wafer 100 is towards the initial position of the predetermined path when ion beam 200 is interrupted, or the moving direction of wafer 100 is away from the end position of the predetermined path when ion beam 200 is interrupted, or the number of scans of ion beam 200 when ion beam 200 is interrupted is an even number of scans, or the preset position is the initial position, the second control module is used to keep wafer 100 at the initial position.

[0086] In this process, the wafer 100 is moved from the initial end to the final end in an odd-numbered scan, and from the final end to the initial end in an even-numbered scan. Specifically, the first time the wafer 100 moves from the initial end to the final end is the first scan (odd-numbered scan), the first time the wafer 100 moves from the final end to the initial end is the second scan (even-numbered scan), the second time the wafer 100 moves from the initial end to the final end is the third scan (odd-numbered scan), the second time the wafer 100 moves from the final end to the initial end is the fourth scan (even-numbered scan)...

[0087] It should be noted that when wafer 100 moves once along the predetermined path from the initial end to the end, or from the end to the initial end, it is counted as one scan. The number of scans is only related to the number of times wafer 100 moves along the predetermined path, and is not related to whether there is an emitted ion beam 200 during the movement of wafer 100 along the predetermined path.

[0088] In other embodiments, the preset position can also be determined based on the result of judging the wafer's movement direction when the ion beam is interrupted, to determine whether it is the initial or final position in the predetermined path. Based on the result of judging the preset position, the wafer can continue to move along the predetermined path and the movement direction when the ion beam is interrupted until it reaches the preset position. It is understood that in this case, the method of judging the wafer's movement direction when the ion beam is interrupted does not include judging whether the preset position is the final position or whether it is the initial position.

[0089] Specifically, if the determination result of the wafer's movement direction when the ion beam is interrupted is: the wafer's movement direction is towards the end position of the predetermined path, or the wafer's movement direction is away from the initial position of the predetermined path, or the number of ion beam scans when the ion beam is interrupted is an odd number of scans, then the preset position is the end position; if the determination result of the wafer's movement direction when the ion beam is interrupted is: the wafer's movement direction is towards the initial position of the predetermined path, or the wafer's movement direction is away from the end position of the predetermined path, or the number of ion beam scans when the ion beam is interrupted is an even number of scans, then the preset position is the initial position.

[0090] After wafer 100 is in the initial position, turning on ion beam 200 and restoring ion beam 200 to a normal and stable state means: after wafer 100 is in the initial position, turning on ion beam 200 and adjusting ion beam 200 to restore ion beam 200 to a normal and stable state. Specifically, restoring ion beam 200 to a normal and stable state includes: turning on ion beam 200, adjusting the parameters of ion beam 200 to the specifications before ion beam 200 was interrupted, and ensuring that the fluctuation range of ion beam 200 parameters meets preset requirements.

[0091] In this embodiment, the step of adjusting the parameters of the ion beam 200 to the specifications before the ion beam 200 was interrupted and making the fluctuation range of the parameters of the ion beam 200 meet the preset requirements includes one or more of the following: ion energy, ion beam density, ion beam parallelism, and ion beam divergence angle.

[0092] In one embodiment, such as Figure 3 As shown, when the preset position is the end position, the interrupt module is used to interrupt the ion beam 200 after the ion beam 200 has been restored to a normal and stable state; the second control module is used to move the wafer 100 back to the preset position after the ion beam 200 is interrupted.

[0093] In this embodiment, the adjustment module is used to restore the ion beam 200 to a normal and stable state based on the monitoring results of the ion beam 200.

[0094] In this embodiment, since the input power supply of the ion source 300 remains on, the adjustment module is used to turn on the input power supply of the extraction electrode 311. It should also be noted that when the preset position is the end position, the supplementary injection module is also used to turn on the input power supply of the extraction electrode.

[0095] It should be noted that the supplementary implantation is configured to perform ion implantation on a local area of ​​wafer 100 (i.e., the area that was not implanted when the ion beam 200 was interrupted).

[0096] In this embodiment, as Figure 3 As shown, when the preset position is the end position, the third control module is used to move the wafer 100 from the end position along a predetermined path toward the initial end position, and the supplementary implantation module is used to continue implanting ions into the unimplanted region 101 of the wafer 100 by the ion beam 200 until the supplementary implantation of the unimplanted region 101 is completed; Figure 4 As shown, when the preset position is the initial end position, the third control module is used to make the wafer 100 move from the initial end position along a predetermined path toward the end position, and the supplementary implantation module is used to make the ion beam 200 continue to implant ions into the unimplanted region 101 of the wafer 100 until the supplementary implantation of the unimplanted region 101 is completed.

[0097] It should be noted that, as Figure 3 As shown, in one embodiment, when the preset position is the end position, the interruption module is used to interrupt the ion beam 200 after it has been restored to a normal and stable state; the second control module is used to move the wafer 100 back to the preset position after the ion beam 200 is interrupted. Correspondingly, during the process of the third control module moving the wafer 100 from the preset position along a predetermined path and in the opposite direction to the direction of movement when the ion beam 200 is interrupted, before the wafer 100 moves to the preset coverage area of ​​the ion beam 200, the re-implantation module is used to turn on the ion beam 200 to restore it to a normal and stable state.

[0098] Specifically, turning on the ion beam 200 before the wafer 100 moves to the preset coverage area of ​​the ion beam 200 and restoring the ion beam 200 to a normal and stable state means turning on the ion beam 200 and keeping it in a normal and stable state (that is, keeping it in the specifications after the ion beam 200 is adjusted).

[0099] In this embodiment, the position of wafer 100 when the ion beam 200 is interrupted is obtained in advance and designated as the interruption position. Accordingly, during the process of the third control module moving wafer 100 from the preset position along a predetermined path and in the opposite direction to the direction of movement when the ion beam 200 is interrupted, when wafer 100 moves to the interruption position, the supplementary implantation module completes the supplementary implantation of the unimplanted region 101 of wafer 100.

[0100] In this embodiment, the interruption module is also used to interrupt the ion beam 200 when the supplementary implantation is completed. Specifically, after the supplementary implantation is completed and the ion beam 200 is interrupted, the third control module is also used to make the wafer 100 continue to move along the predetermined path and the direction during the supplementary implantation to another extreme position of the predetermined path.

[0101] It should be noted that the ion implantation repair system 600 of this embodiment is used to perform the ion implantation repair method of the foregoing embodiments. For a detailed description of the ion implantation repair system 600, please refer to the relevant descriptions in the foregoing embodiments, which will not be repeated here.

[0102] Accordingly, in conjunction with references Figure 2 , Figure 6 and Figure 7 The present invention also provides an ion implanter. Figure 6 This is a schematic diagram of the structure of an embodiment of the ion beam generating device of the ion implanter of the present invention. Figure 7 This is a hardware structure diagram of an embodiment of the control device for the ion implanter of the present invention. In this embodiment, the ion implanter includes: an ion beam generating device 320 for emitting an ion beam 200 and interrupting the ion beam 200; a wafer moving device 115 for fixing the wafer 100 and driving the wafer 100 to move along a predetermined path and direction, the predetermined path having two extreme positions, one extreme position being the initial end position of the predetermined path and the other extreme position being the end position of the predetermined path; and a control device (such as...). Figure 7 As shown, it includes at least one memory 03 and at least one processor 01. The memory 01 stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor 01 to control the ion beam generating device 320 and the wafer moving device 115 to implement the ion implantation repair method of any embodiment of the present invention.

[0103] During the reimplantation process, the wafer 100 is moved in the opposite direction to the direction in which the ion beam 200 was interrupted. Consequently, the unimplanted region 101 on the wafer 100 that has not yet been ion-implanted due to the ion beam 200 malfunction is oriented towards the ion beam 200. This not only enables the reimplantation of the unimplanted region 101, but also ensures that the implantation angle during reimplantation is the same as the original implantation angle before the ion beam 200 was interrupted, since the wafer is not rotated 180 degrees. This allows the reimplantation of the unimplanted region 101 to meet the requirements of the original ion implantation process, thereby improving the repair effect of ion implantation.

[0104] The ion beam generating device 320 is used to emit the ion beam 200 to provide a process basis for supplementary implantation.

[0105] In this embodiment, the ion implanter further includes: a beam monitoring device 210 (e.g., ...). Figure 2 As shown, the control device is used to monitor the ion beam 200. Based on the monitoring results of the beam current monitoring device 210, when an abnormality occurs in the ion beam 200, the control device controls the ion beam generating device 210 to interrupt the ion beam 200. The control device also adjusts the ion beam generating device 320 based on the monitoring results of the beam current monitoring device 210 to restore the ion beam 200 to a normal and stable state. By monitoring the ion beam 200 and controlling its interruption based on the monitoring results, it is beneficial to promptly detect abnormalities in the ion beam 200, thereby further reducing the adverse effects caused by these abnormalities. Adjusting the ion beam generating device 320 based on the monitoring results of the beam current monitoring device 210 to restore the ion beam 200 to a normal and stable state facilitates accurate monitoring of the ion beam 200, resulting in better adjustment of the ion beam 200.

[0106] In this embodiment, the ion beam generating device 320 includes: an ion source 300; and an extraction component 310 for generating an ion beam 200 based on the ion source 300, wherein the extraction component 310 includes an extraction electrode 311. Correspondingly, the control device is also configured to control the ion beam generating device 320 to turn off the input power supply (not shown) of the extraction electrode 311 and keep the input power supply of the ion source 300 (not shown) on to interrupt the ion beam 200; and to control the ion beam generating device 320 to turn on the input power supply of the extraction electrode 311 to turn on the ion beam 200. When the ion beam 200 is interrupted, turning off the input power supply of the extraction electrode 311 while keeping the input power supply of the ion source 300 on is beneficial for maintaining a stable plasma 301 inside the ion source 300 without forming the ion beam 200. This is beneficial for shortening the time required for the ion beam 200 to reach a stable state after the ion beam 200 is turned on (i.e., the input power supply of the extraction electrode 311 is turned on), thereby improving the efficiency of the supplementary injection.

[0107] like Figure 7 As shown, the control device provided in this embodiment of the invention may include: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04.

[0108] In this embodiment, the number of processor 01, communication interface 02, memory 03, and communication bus 04 is at least one, and the processor 01, communication interface 02, and memory 03 communicate with each other through communication bus 04. Communication interface 02 can be an interface of a communication module for network communication, such as the interface of a GSM module. Processor 01 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the ion implantation repair method of any embodiment of the present invention. Memory 03 may include high-speed RAM memory and may also include non-volatile memory (NVM), such as at least one disk storage device. Memory 03 stores one or more computer instructions, which are executed by processor 01 to implement the ion implantation repair method of any embodiment of the present invention.

[0109] It should be noted that the control device described above may also include other devices (not shown) that may not be essential to understanding the content disclosed in the embodiments of the present invention; given that these other devices may not be essential for understanding the content disclosed in the embodiments of the present invention, they will not be described one by one in the embodiments of the present invention. In practical applications, the control device may be a microcontroller (MCU), a programmable logic controller (PLC), or other control equipment.

[0110] It should also be noted that for a detailed description of the ion implantation repair method, please refer to the detailed description of the foregoing embodiments, which will not be repeated in this embodiment.

[0111] Accordingly, embodiments of the present invention also provide a computer program product, including computer instructions, which, when executed by a processor, are used to implement the ion implantation repair method of any embodiment of the present invention.

[0112] Accordingly, embodiments of the present invention also provide a storage medium storing one or more computer instructions, which are used to implement the ion implantation repair method of any embodiment of the present invention.

[0113] The embodiments of the present invention described above are combinations of elements and features of the invention. Unless otherwise stated, the elements or features are to be considered optional. Individual elements or features may be practiced without combination with other elements or features. Furthermore, embodiments of the invention may be constructed by combining some elements and / or features. The order of operations described in the embodiments of the invention may be rearranged. Some constructions of any embodiment may be included in another embodiment and may be replaced by corresponding constructions of another embodiment. It will be apparent to those skilled in the art that claims in the appended claims that are not expressly referenced to each other may be combined to form embodiments of the invention, or may be incorporated as new claims in amendments made after the filing of this application.

[0114] Embodiments of the present invention can be implemented by various means, such as hardware, firmware, software, or combinations thereof. In a hardware configuration, the method according to an exemplary embodiment of the present invention can be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc. In a firmware or software configuration, embodiments of the present invention can be implemented in the form of modules, processes, functions, etc. Software code can be stored in memory units and executed by a processor. The memory units are located inside or outside the processor and can send data to and receive data from the processor via various known means.

[0115] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A repair method using ion implantation, characterized in that, include: In response to an ion beam anomaly that occurs while the wafer is moving along a predetermined path and direction and undergoing ion beam scanning, the ion beam is interrupted. The predetermined path has two extreme positions, one of which is the initial end position of the predetermined path, and the other extreme position is the end position of the predetermined path. The wafer continues to move along the predetermined path and the direction of movement when the ion beam is interrupted, until it reaches a preset position that is no longer covered by the ion beam. The preset position is one of the two extreme positions of the predetermined path. Determine the direction of wafer movement when the ion beam is interrupted, and obtain the determination result; After the wafer reaches the preset position, based on the judgment result, the wafer is kept at the initial end position, or the wafer is moved from the end position to the initial end position; After the wafer is in the initial position, the ion beam is turned on to restore the ion beam to a normal and stable state. Based on the judgment result, the wafer is moved from the preset position along the predetermined path and in the opposite direction to the direction of movement when the ion beam is interrupted, and supplementary implantation is performed under normal and stable ion beam conditions.

2. The ion implantation repair method as described in claim 1, characterized in that, The methods for determining the wafer's movement direction when the ion beam is interrupted include: determining whether the wafer's movement direction is towards the end position of the predetermined path or towards the initial position of the predetermined path; or, determining whether the wafer's movement direction is away from the initial position of the predetermined path or away from the end position of the predetermined path; or, determining whether the number of ion beam scans when the ion beam is interrupted is an odd number of scans or an even number of scans; or, determining whether the preset position is the end position or the preset position is the initial position. In the step of keeping the wafer at the initial end position or moving the wafer from the end position to the initial end position based on the judgment result: the judgment result is that when the ion beam is interrupted, the wafer's movement direction is towards the end position of the predetermined path, or when the ion beam is interrupted, the wafer's movement direction is away from the initial end position of the predetermined path, or when the number of ion beam scans when the ion beam is interrupted is an odd number of scans, or when the preset position is the end position, the wafer is moved from the end position to the initial end position; The determination result is that when the ion beam is interrupted, the wafer's movement direction is towards the initial end position of the predetermined path, or when the ion beam is interrupted, the wafer's movement direction is away from the end position of the predetermined path, or when the number of ion beam scans is an even number, or when the preset position is the initial end position, the wafer is kept at the initial end position.

3. The ion implantation repair method as described in claim 2, characterized in that, If the determination result is: when the ion beam is interrupted, the wafer's movement direction is towards the end position of the predetermined path, or when the ion beam is interrupted, the wafer's movement direction is away from the initial end position of the predetermined path, or when the ion beam is interrupted, the number of ion beam scans is an odd number of scans, then the preset position is the end position. If the determination result is: when the ion beam is interrupted, the wafer's movement direction is towards the initial end position of the predetermined path; or when the ion beam is interrupted, the wafer's movement direction is away from the end position of the predetermined path; or when the ion beam is interrupted, the number of ion beam scans is an even number of scans, then the preset position is the initial end position.

4. The ion implantation repair method as described in claim 1, characterized in that, In the step of re-implanting the wafer by moving it from a preset position along the predetermined path and in the opposite direction to the direction of movement when the ion beam is interrupted: When the preset position is the end position, the wafer is moved from the end position along the predetermined path toward the initial end position so that the ion beam continues to implant ions into the unimplanted area of ​​the wafer until the unimplanted area is fully implanted. When the preset position is the initial end position, the wafer is moved from the initial end position along the predetermined path toward the end position, so that the ion beam continues to implant ions into the unimplanted area of ​​the wafer until the implantation of the unimplanted area is completed.

5. The ion implantation repair method as described in claim 1, characterized in that, The ion beam is interrupted when the supplementary implantation is completed.

6. The ion implantation repair method according to claim 5, characterized in that, After the supplementary implantation is completed and the ion beam is interrupted, the wafer continues to move along the predetermined path and in the direction of the supplementary implantation to another extreme position of the predetermined path.

7. The ion implantation repair method as described in claim 1, characterized in that, When the preset position is an end position, the ion implantation repair method further includes: After restoring the ion beam to a normal and stable state, the ion beam is interrupted. After the ion beam is interrupted, the wafer is moved back to the preset position; During the replenishment implantation step, before the wafer is moved to the preset coverage area of ​​the ion beam, the ion beam is turned on to restore the ion beam to a normal and stable state.

8. The ion implantation repair method as described in claim 1, characterized in that, Restoring the ion beam to a normal and stable state includes: turning on the ion beam, adjusting the parameters of the ion beam to the specifications before the ion beam was interrupted, and ensuring that the fluctuation range of the ion beam parameters meets preset requirements.

9. The ion implantation repair method as described in claim 8, characterized in that, In the step of adjusting the parameters of the ion beam to the specifications before the ion beam was interrupted, and making the fluctuation range of the ion beam parameters meet the preset requirements, the parameters of the ion beam include one or more of the following: ion energy, ion beam density, ion beam parallelism, and ion beam divergence angle.

10. The ion implantation repair method as described in claim 1, characterized in that, The ion implantation repair method further includes: obtaining the location of the wafer when the ion beam is interrupted, as the interruption location; In the supplementary implantation step, when the wafer moves to the interrupted position, the supplementary implantation of the unimplanted area of ​​the wafer is completed.

11. The ion implantation repair method as described in claim 1, characterized in that, Based on the monitoring results of the ion beam, when the monitoring results indicate that the ion beam is abnormal, the ion beam is interrupted in response to the occurrence of the ion beam abnormality, so as to stop the ion implantation process. Based on the monitoring results of the ion beam, the ion beam was restored to a normal and stable state.

12. The ion implantation repair method as described in claim 1, characterized in that, The ion beam is generated in concert via an ion source and an extraction assembly, and the extraction assembly includes extraction electrodes; The step of interrupting the ion beam includes: turning off the input power supply to the extraction electrode while keeping the input power supply to the ion source on. The step of turning on the ion beam includes turning on the input power supply of the extraction electrode.

13. An ion implanter, characterized in that, include: An ion beam generating device for outputting and interrupting ion beams; A wafer moving device is used to fix a wafer and drive the wafer to move along a predetermined path and direction. The predetermined path has two extreme positions, one extreme position being the initial end position of the predetermined path and the other extreme position being the end position of the predetermined path. A control device includes at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to control an ion beam generating device and a wafer moving device to implement the ion implantation repair method as described in any one of claims 1 to 10.

14. The ion implanter as described in claim 13, characterized in that, The ion implanter further includes a beam monitoring device for monitoring the ion beam; The control device is also used to control the ion beam generating device to interrupt the ion beam in response to the ion beam abnormality, based on the monitoring results of the ion beam by the beam monitoring device. The control device is also used to adjust the ion beam generating device based on the monitoring results of the ion beam by the beam monitoring device, so that the ion beam is restored to a normal and stable state.

15. The ion implanter as described in claim 13, characterized in that, The ion beam generating device includes: an ion source; and an extraction assembly for generating an ion beam based on the ion source, wherein the extraction assembly includes extraction electrodes. The control device is also configured to control the ion beam generating device to turn off the input power supply of the extraction electrode and keep the input power supply of the ion source on to interrupt the ion beam; and is also configured to control the ion beam generating device to turn on the input power supply of the extraction electrode to turn on the ion beam.

16. A computer program product, characterized in that, Includes computer instructions, which, when executed by a processor, are used to implement the ion implantation repair method as described in any one of claims 1 to 12.

17. A storage medium, characterized in that, The storage medium stores one or more computer instructions for implementing the ion implantation repair method as described in any one of claims 1 to 12.

18. An ion implantation repair system, characterized in that, include: An ion beam module is configured to interrupt the ion beam in response to an ion beam anomaly that occurs while the wafer is moving along a predetermined path and direction and undergoing ion beam scanning. It is also configured to cause the ion beam generating device to emit an ion beam after the wafer is in the initial end position and to restore the ion beam to a normal and stable state. Furthermore, it is configured to perform re-implantation on the wafer when the wafer is moving along the predetermined path and in the opposite direction to the direction of movement when the ion beam is interrupted. A wafer movement module is used to control a wafer movement device to move the wafer along a predetermined path and direction. The predetermined path has two extreme positions, one of which is the initial end position of the predetermined path, and the other extreme position is the end position of the predetermined path. The wafer movement module is also used to, in the event of an ion beam malfunction or interruption, to continue moving the wafer along the predetermined path and the direction of movement when the ion beam was interrupted, to reach a preset position that is no longer covered by the ion beam. The preset position is one of the two extreme positions of the predetermined path. The module is also used to, after the wafer reaches the preset position, based on a judgment result, to keep the wafer at the initial end position, or to move the wafer from the end position to the initial end position. And for moving the wafer from the preset position along the predetermined path and in the opposite direction to the direction of movement when the ion beam is interrupted; The judgment module is used to determine the direction of wafer movement when the ion beam is interrupted and to obtain the judgment result.

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