Vacuum deposition source arrangement, vacuum deposition system and method for coated substrates

Abstract

An arrangement of vapor deposition sources for coating a substrate is described. The vapor deposition source arrangement includes: a vapor deposition source (101) having a first vapor distribution conduit (110) having a first row of nozzles (111) for depositing a first material on the substrate; a rotary driver (113) for rotating the vapor deposition source about a rotation axis (R1); and a shielding arrangement (200) partially surrounding the vapor deposition source and including an idle shielding member (202) and a shaper shielding member (201). The rotary driver is configured to rotate the vapor deposition source relative to the shielding arrangement between an idle position and a first deposition position, in which the first row of nozzles is guided toward the idle shielding member (202), and in the first deposition position, the first row of nozzles is aligned with a first slit (211) disposed in the shaper shielding member (201), the first slit (211) being configured to limit a first opening angle (β1) of the vapor plume ejected by the first row of nozzles. A vacuum deposition system and a method for coating a substrate are further described.

Description

Technical Field

[0001] Embodiments of this disclosure relate to methods and apparatus for coating a substrate with layer stacks. More specifically, embodiments of this disclosure relate to vapor deposition source arrangements and vacuum deposition systems for depositing OLED layer stacks on a substrate, particularly on a substantially vertically oriented substrate. For example, inorganic layers (such as metal layers) and / or organic layers of the OLED layer stack can be deposited on the substrate. Embodiments of this disclosure specifically relate to vapor deposition source arrangements and vacuum deposition systems, and methods for manufacturing OLED displays by thermal evaporation. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are light-emitting diodes in which the electroluminescent layer is an organic compound film that emits light in response to an electric current. Because OLEDs emit light directly without the need for backlighting or color filters, OLED displays offer a wider color gamut and viewing angle compared to traditional LCD displays. Furthermore, OLEDs can be fabricated on flexible substrates, and therefore, they can be used in a variety of applications. OLEDs are used to manufacture television screens, computer monitors, mobile phones, and other handheld devices for displaying information. OLEDs can also be used for general spatial lighting. OLED displays may, for example, include an organic material layer deposited on a substrate between two electrodes in a manner that forms a matrix display panel with individually excitable pixels.

[0003] Organic and metallic materials are deposited on a substrate in a vacuum processing chamber for OLED manufacturing. Metallic materials are used as, for example, electrode materials or electron injection layer (EIL) materials. The materials to be deposited are evaporated using a evaporation source, and the evaporated material is guided onto the substrate through a nozzle. Metallic materials are typically evaporated in the evaporation source at temperatures of 1,000°C or higher, or 1,500°C or higher. Organic materials are typically evaporated in a evaporation source arrangement at temperatures between 250°C and 500°C.

[0004] Metal and organic vapor depositors can be used to produce organic light-emitting diodes (OLEDs). Other applications utilize vapor depositors to deposit metal or organic layers onto, for example, large-area substrates. OLED displays may include, for example, multiple layers of organic material located between two electrodes deposited on the substrate. One of the electrodes may include a transparent conductive layer, such as ITO or other transparent conductive oxide (TCO) materials. The second electrode may include a metal or metal alloy.

[0005] OLED pixels can be deposited on a substrate using a fine metal mask (IMM), also known as a pixel mask, which has multiple small pixel holes defining individual pixel regions on the substrate. Precise alignment between the IMM and the substrate is necessary for pixel deposition, which is challenging because each of the small pixels includes multiple layers that need to be deposited stacked on top of each other on a corresponding anode.

[0006] Another technique for forming OLED pixels on a substrate uses photolithography to pattern the pixels instead of a fine metal mask (IMM). Here, the structure used as a masking layer is formed directly on the substrate before the actual pixel deposition. Alignment issues are reduced. However, rapidly and reliably coating substrates using OLED layer stacking without an IMM requires complex equipment and is also challenging.

[0007] In light of the foregoing, it would be beneficial to provide a method for rapidly and reliably coating substrates with OLED layer stacking, particularly without using a fine metal mask (IMM). Furthermore, improved evaporation source arrangements, vacuum deposition systems, and device fabrication methods suitable for OLED manufacturing would be advantageous. Summary of the Invention

[0008] In view of the foregoing, the independent claims provide an arrangement of vapor deposition sources, a vacuum deposition system, and a method for coating substrates in a vacuum chamber. Further aspects, benefits, and features of this disclosure will be apparent from the claims, description, and drawings.

[0009] According to one aspect, a vapor deposition source arrangement for coating a substrate is provided. The vapor deposition source arrangement includes: a vapor deposition source having a first vapor distribution conduit having a first row of nozzles for depositing a first material on the substrate; a rotary driver for rotating the vapor deposition source about a rotation axis; and a shielding arrangement partially surrounding the vapor deposition source and including an idle shielding member and a shaper shielding member. The rotary driver is configured to rotate the vapor deposition source relative to the shielding arrangement between an idle position and a first deposition position, in which the first row of nozzles is guided toward the idle shielding member, and in the first deposition position, the first row of nozzles is aligned with a substantially vertically oriented first slit disposed in the shaper shielding member. The first slit is configured to limit the opening angle of the vapor plume ejected by the first row of nozzles.

[0010] In some embodiments, a first vapor distribution conduit and optionally a second vapor distribution conduit of the vapor deposition source extend in a substantially vertical orientation and are configured to coat substrates having a substantially vertical orientation, which are moved past the vapor deposition source in a substrate transport path. Specifically, having a 1m... 2 Larger substrates, or substrates with even larger surface areas, can be coated in a substantially vertical orientation.

[0011] According to another aspect, a vacuum deposition system is provided. The vacuum deposition system includes a first vacuum chamber and an arrangement of evaporation sources according to any of the embodiments described herein.

[0012] The vacuum deposition system may include: a substrate transport track configured to move a substrate along a substrate transport path past an evaporation source arrangement; and optionally, a shielding transport track, located between the substrate transport track and the evaporation source arrangement, and configured to move a movable shield in front of the substrate to shield edge regions of the substrate and / or to shield a substrate carrier. The substrate transport track may be configured to move a substrate having a substantially vertical orientation past the evaporation source arrangement.

[0013] According to another aspect, a method for coating a substrate in a vacuum chamber having a vapor deposition source arrangement is provided. The vapor deposition source arrangement includes: a vapor deposition source having a first vapor distribution conduit with a first row of nozzles; and a shielding arrangement partially surrounding the vapor deposition source and including an idle shielding member and a shaper shielding member. The method includes: rotating the vapor deposition source about a rotation axis relative to the shielding arrangement from an idle position to a first deposition position, wherein in the idle position, the first row of nozzles is guided toward the idle shielding member, and in the first deposition position, the first row of nozzles is aligned with a first slit disposed in the shaper shielding member and oriented substantially vertically. The method further includes transporting the substrate through the vapor deposition source in the first deposition position while guiding a first material from the first row of nozzles toward the substrate, the first slit limiting a first opening angle of the vapor plume ejected by the first row of nozzles.

[0014] Specifically, the first slit may be at least as long as or longer than the first row of nozzles in a substantially vertical direction, such that the vapor plumes of the nozzles of the first row of nozzles are shaped by the shaper shield in which the first slit is formed.

[0015] The shaper shield can be connected to, or in particular integrated with, an idle shield to form a continuous shielding wall that partially surrounds the vapor deposition source.

[0016] Optionally, the vapor deposition source includes at least a second vapor distribution conduit having a second row of nozzles. In the first deposition position, the second row of nozzles is aligned with either a substantially vertically oriented first slit or a substantially vertically oriented second slit disposed within the shaper shield. The first or second slit limits a second opening angle of the vapor plume ejected by the second row of nozzles. Specifically, the first and second slits are at least as long as or longer than the first and second row of nozzles, such that (all) vapor plumes ejected by the first and second row of nozzles are shaped by the slits.

[0017] The embodiments also relate to apparatus for performing the disclosed methods, and include apparatus parts for performing each described method aspect. The method aspects can be performed by hardware components, a computer programmed with suitable software, by any combination of both, or in any other manner. Furthermore, the embodiments also relate to methods for operating the described apparatus. Methods for operating the described apparatus include method aspects for performing each function of the apparatus. The embodiments also relate to methods for manufacturing processed substrates (particularly coated substrates) in the vacuum deposition system described herein, and substrates manufactured according to the methods described herein and / or using the systems described herein, such as OLED substrates, particularly OLED displays. Other devices besides OLED displays can also be manufactured using the apparatus and methods described herein. Attached Figure Description

[0018] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments. The accompanying drawings relate to embodiments of this disclosure and are described below:

[0019] Figure 1 A schematic diagram of a vacuum deposition system having a plurality of vapor deposition sources arranged according to an embodiment is shown;

[0020] Figure 2 A schematic diagram of the vapor deposition source arrangement according to an embodiment is shown;

[0021] Figure 3 A schematic diagram of the vapor deposition source arrangement according to an embodiment at the first deposition location is shown in horizontal cross-section;

[0022] Figure 4 Showing the free position Figure 3 The arrangement of the vapor deposition source;

[0023] Figure 5 This is a schematic diagram showing the vapor deposition sources arranged in a horizontal cross section according to an embodiment;

[0024] Figure 6 This is a schematic perspective view of the vapor deposition source arrangement according to an embodiment;

[0025] Figure 7 This is a flowchart illustrating a coating method according to an embodiment; and

[0026] Figure 8 A schematic cross-sectional view of a substrate with OLED layer stacks manufactured according to the method of this disclosure. Detailed Implementation

[0027] Reference will now be made in detail to various embodiments, one or more examples of which are shown in each figure. Each example is provided in an illustrative manner and is not intended to be limiting. For example, features shown or described as part of an embodiment may be used on or in combination with any other embodiment to produce yet another embodiment. This disclosure is intended to include such modifications and variations.

[0028] In the following description of the accompanying drawings, the same reference numerals denote the same or similar parts. Generally, only differences with respect to individual embodiments are described. Unless otherwise indicated, the description of parts or aspects of one embodiment may also be applied to corresponding parts or aspects of another embodiment.

[0029] OLED pixels can be formed on a substrate using photolithography and patterning, especially in the absence of a fine metal mask (IMM). An IMM has multiple pixel holes and is positioned in front of and aligned relative to the substrate before material deposition. OLED pixel patterning without an IMM is based on a structure formed directly on the substrate, acting as a masking layer, before the substrate is coated with multiple materials in a vacuum deposition system. The structure formed on the substrate can include sidewalls adjacent to the pixel region, particularly sidewalls surrounding the pixel region, and overhanging structures that extend at least partially from the sidewalls over the pixel region, such as… Figure 8 As illustrated.

[0030] Figure 8 This is a schematic cross-sectional view of a portion of an OLED layer stack 760 on a substrate 10 manufactured using OLED pixel patterning technology. An adjacent pixel defining layer (PDL) structure 715 is formed on the upper surface of the substrate 10 defining a pixel region, and an overhang structure 720 is disposed on the upper surface of the PDL structure 715. The overhang structure 720 includes a lower portion 720b having sidewalls and an upper portion 720a having an overhang portion that partially protrudes from the lower portion 720b over the pixel region 13. Figure 8 In the diagram, a first sidewall 11 adjacent to the pixel region 13 is schematically depicted, and a first overhang 12 protrudes partially from the first sidewall 11 above the pixel region 13. As will be understood, the pixel region 13 may be surrounded by two or more sidewalls (e.g., on opposite sides), and overhangs may be formed on two or more sidewalls and protrude partially from different sides above the pixel region.

[0031] Individually switchable pixels can be formed on a substrate by depositing various materials onto a defined location beneath the overhang in the pixel region, followed by subsequent etching / patterning. However, depositing metal and organic layers to a predetermined extent, particularly beneath the overhang, is challenging.

[0032] The lower portion 720b having the first sidewall 11 may be made of a conductive material intended to contact the cathode layer 711 of the OLED layer stack 760 and allow the cathode layer 711 to be connected to a cathode potential. Alternatively or additionally, at least a portion of the first sidewall 11 may include an auxiliary cathode 716 intended to contact the cathode layer 711 of the OLED layer stack. The upper portion 720a having the overhang may be made of a non-conductive inorganic material, or alternatively, a conductive inorganic material.

[0033] The OLED layer stack 760 typically includes an anode layer 714, an optional hole injection layer HIL 718, at least one organic layer 713 (made of one or more optically active organic materials), an optional electron injection layer EIL 712, a cathode layer 711, and at least one encapsulation layer 710.

[0034] like Figure 8 As shown, at least one organic layer 713 does not contact the first sidewall 11, but the cathode layer 711 contacts the first sidewall 11 below the first overhang 12. To ensure that at least one organic layer 713 substantially does not contact the first sidewall 11 below the first overhang, at least one organic layer 713 may be deposited with an organic vapor plume 732 having a specific opening angle. To ensure that the cathode layer 711 reliably contacts the first sidewall 11 below the overhang, the cathode layer may be deposited with a metal vapor plume 731 having a specific opening angle. However, a vapor plume with a large opening angle may not always be beneficial, for example, because a vapor plume with a large opening angle causes a significant shading effect in different directions, which may lead to stray coating in areas of the deposition system and areas of the substrate that should not be coated.

[0035] In view of the above, methods and apparatus are described herein, based on embodiments, to allow OLED layer stacks to be reliably deposited on a substrate, particularly on substrates having overhang structures formed thereon, but not limited to such substrates. For example, the methods described herein can ensure or improve electrical contact between the cathode layer and the conductive sidewall beneath the overhang, and / or reduce or prevent contact between the organic layer and the conductive sidewall beneath the overhang. Contact between the organic layer and the conductive sidewall may reduce contact and may increase the contact resistance between the cathode layer (deposited above the organic layer) and the conductive sidewall. Low contact resistance between the cathode layer and the conductive sidewall is advantageous, for example, to reduce or prevent the impact on the IV curve of the manufactured OLED device.

[0036] As will be understood, the apparatus and methods described herein can also be used in other applications, such as for forming pixels using fine metal masks, for fabricating other layer stacks, or for coating other types of substrates. The embodiments described herein generally relate to coating a substrate having one or more layers with a substantially vertical orientation using a vapor deposition source having one or more substantially vertically oriented vapor distribution channels.

[0037] Figure 1 A schematic top view illustrates a vacuum deposition system 1000 having an evaporation source arrangement 100 according to an embodiment described herein. The vacuum deposition system 1000 includes a first vacuum chamber 1001 housing an evaporation source 101, and one or more additional vacuum chambers optionally housing one or more additional evaporation sources (e.g., a second evaporation source 102 and / or a third evaporation source 103). The evaporation sources may be configured to coat a vertically or substantially vertically oriented substrate being transported via a substrate transport track 1013. Multiple materials, including one or more metals and / or one or more organic materials, may be sequentially deposited onto the substrate to provide a layer stack, such as an OLED layer stack. For example, the vacuum deposition system 1000 may include ten or more evaporation sources for coating the substrate in multiple layers.

[0038] In this disclosure, "vacuum deposition system" should be understood as a system or arrangement configured for vacuum deposition of material on a substrate. A vacuum chamber or "vacuum processing chamber" should be understood as a chamber configured for vacuum deposition. As used herein, the term "vacuum" can be understood as a technical vacuum with a vacuum pressure less than, for example, 10 mbar. Typically, the pressure in a vacuum chamber as described herein can be 10 mbar. -5 millibars and about 10 -8 Between millibars, especially at 10 -5 millibars and 10 -7 Between milligrams.

[0039] The vacuum deposition system 1000 may include a substrate transport track 1013 configured to move a substrate 10 along a substrate transport path T past a vapor deposition source 101 and optionally past another vapor deposition source. The substrate transport track 1013 may extend at least partially through a first vacuum chamber 1001 and through an optional additional vacuum chamber, and may include a substrate transport system configured for substrate transport, such as a roller transport system adapted to move the substrate relative to and past the vapor deposition source, one or more linear motors, and / or a magnetic levitation system. During transport and / or deposition, the substrate may be carried by a substrate carrier 1020.

[0040] The vacuum deposition system 1000 optionally further includes a shielding transport track 1012 extending between a substrate transport track 1013 and a vapor deposition source 101 in a first vacuum chamber 1001. The shielding transport track 1012 is configured to move a movable shield 1030 in front of the substrate 10 to shield one or more edge regions of the substrate 10 and / or to shield at least a portion of the substrate carrier 1020 supporting the substrate 10. The movable shield 1030 may be a movable edge exclusion shield having a shielding frame for covering one or more edge regions of the substrate. The shielding transport track 1012 may be located between the substrate transport track 1013 and the vapor deposition source 101 in the first vacuum chamber 1001 and may include a shielding transport system, such as a roller transport system, one or more linear motors and / or a magnetic levitation system, adapted to move the movable shield 1030 in front of the substrate 10 such that one or more edge regions of the substrate are covered during coating with the vapor deposition source 101, as shown in the image. Figure 1 The illustration is shown in the middle.

[0041] The movable shielding component 1030 can move back and forth on the shielding component transport track 1012, such as... Figure 1 As illustrated by the corresponding arrows, subsequent substrates moving along the substrate transport path T during coating with vapor deposition source 101 can be shielded by movable shielding member 1030. Each vapor deposition source may have an associated movable shielding member that can move back and forth on a corresponding shielding transport track to shield edge areas of the substrate from coating as the substrate moves past the corresponding vapor deposition source.

[0042] Therefore, an online system is provided that allows for the continuous deposition of multiple layers on a substrate while the substrate moves through multiple evaporation sources via a vacuum deposition system 1000.

[0043] The embodiments described herein specifically relate to material deposition, such as for display fabrication on large-area substrates. According to some embodiments, the large-area substrate or substrate carrier supporting one or more substrates may have a diameter of 0.5 m. 2 Or larger, especially 1m 2 Or even larger sizes. For example, the deposition system can be adapted to process large-area substrates, such as 4.5 generation substrates, which correspond to approximately 0.67 μm. 2 The substrate (0.73m × 0.92m), a fifth-generation substrate, corresponds to approximately 1.4m. 2 (1.1m × 1.3m), 6th generation substrate, which corresponds to approximately 2.7m. 2 (1.5m × approx. 1.8m), 7.5th generation substrate, corresponding to approximately 4.29m. 2 (1.95m × 2.2m), Generation 8.5 substrate, corresponding to approximately 5.7m.2 (2.2m × 2.5m), or even a 10th generation substrate. This corresponds to approximately 8.7m. 2 (2.85m × 3.05m). Even larger generations (such as 11th and 12th generations) and corresponding substrate areas can be achieved. According to a further embodiment, half the size of the aforementioned substrate generations can be processed. Alternatively or additionally, semiconductor wafers can be processed and coated in a deposition system according to this disclosure.

[0044] Figure 2 A vapor deposition source arrangement 100 according to embodiments described herein is shown in more detail. In this disclosure, "vapor deposition source arrangement" should be understood as an arrangement configured for material deposition by vapor deposition on a substrate. The vapor deposition source arrangement 100 includes a vapor deposition source having one or more crucibles 112 and one or more vapor distribution channels 110, the one or more crucibles 112 being configured to vapor deposit one or more source materials, and the one or more vapor distribution channels 110 being configured to guide the vapor-deposited material toward the substrate through a plurality of nozzles. Each vapor distribution channel is fluidly connected to a corresponding crucible such that a vapor deposition source having a plurality of vapor distribution channels can guide (the same or different) source materials vapor-deposited in a plurality of crucibles onto the substrate.

[0045] For example, a vapor distribution pipe or vapor distribution conduit may provide a line source with multiple nozzles arranged in a row (or “line array”) one above the other along the longitudinal direction of the vapor distribution pipe. The nozzle rows may be arranged along the longitudinal direction (a substantially vertical direction) of the vapor distribution pipe to provide a substantially vertical line source. Each vapor distribution pipe typically has a single row of nozzles, particularly suitable for coating a substrate with a substantially vertical orientation, using a single vertical nozzle row.

[0046] As used herein, "generally vertical" refers to a direction corresponding to or deviating from the direction of gravity by less than 10°. Specifically, the substrate 10 and the vapor distribution conduits may be slightly tilted relative to the (precise) vertical direction during coating, for example, both the substrate and the vapor distribution conduits may be tilted at angles of 2° or greater and 8° or less (e.g., about 3°). The longitudinal direction of the vapor distribution conduits may be parallel to the substrate surface. Specifically, a slight "downward tilt" of the substrate surface during material deposition can improve layer quality.

[0047] In some embodiments, the evaporation source is configured to coat the substrate with one or more inorganic materials (particularly metals) stacked with OLED layers. In other embodiments, the evaporation source is configured to coat the substrate with one or more organic materials stacked with OLED layers. In some embodiments, a first evaporation source arrangement as described herein coats the substrate with one or more organic materials, and a second evaporation source arrangement as described herein subsequently coats the substrate with one or more inorganic materials (particularly metals). The source material to be deposited may be an inorganic material, particularly a metallic material, used as an electrode material or electron injection layer material in the OLED layer stack, or the source material may be an organic material used in the production of organic light-emitting diodes (OLEDs).

[0048] like Figure 2 As schematically shown, the vapor deposition source arrangement 100 includes a vapor deposition source 101 having a first vapor distribution conduit 110. Further vapor distribution conduits for the vapor deposition source are not included. Figure 2 As shown, but may optionally exist (see example). Figure 3 The diagram illustrates a vapor deposition source having three vapor distribution channels arranged adjacent to each other on the front side of the vapor deposition source. The first vapor distribution channel 110 has a first row of nozzles 111 arranged along the longitudinal direction of the first vapor distribution channel 110. The nozzles in this row can be arranged in a substantially vertical linear array above each other. The vapor deposition source can be a line source for coating a substrate in a substantially vertical orientation. The vapor deposition source 101 can be configured to deposit one or more materials onto a substrate using one or more vapor distribution channels arranged adjacent to each other, each vapor distribution channel being connected to a crucible.

[0049] The first row of nozzles 111 includes multiple nozzles, particularly twenty or more nozzles. Each nozzle has a primary vapor deposition direction. The "primary vapor deposition direction" of a nozzle can be understood as the direction defined by the nozzle channel and the nozzle opening (typically corresponding to the direction of the nozzle channel, i.e., corresponding to the nozzle axis). Typically, the conical vapor plume ejected by the nozzle is centered on the primary vapor deposition direction of the nozzle; for example, the most vapor particles in the plume propagate along the primary vapor deposition direction. Specifically, the vapor plume ejected by the nozzle or impacting the substrate is defined by the primary vapor deposition direction and the opening angle of the plume.

[0050] The vapor plume may be rotationally symmetrical relative to the main vapor deposition direction, and / or the vapor plume may be shaped by one or more shaper shields 201 to be symmetrical or asymmetrical relative to the main vapor deposition direction and relative to the nozzle axis.

[0051] If the nozzle channels of the nozzles in the first row are substantially parallel to each other, then the nozzles in the first row have a corresponding first principal vapor deposition direction relative to the substrate surface. Figure 2The diagram schematically depicts a parallel vapor plume propagating in the first primary vapor deposition direction M1. Therefore, the first row of nozzles is characterized by the (common) primary vapor deposition direction of the nozzles. For example, Figure 2 The first row of nozzles 111 has a first principal vapor deposition direction M1. The other rows of nozzles described herein are defined by corresponding principal vapor deposition directions, which are common between the nozzles in the respective rows (see [link to documentation]). Figure 3 (Refer to reference numerals M1 and M2 in the accompanying drawings). Each vapor deposition tube typically has a single row of nozzles.

[0052] The vapor deposition source arrangement 100 includes a rotary driver 113 for rotating the vapor deposition source 101 about a rotation axis R1, particularly about a substantially vertical rotation axis. A controller 114 may be provided to control and / or trigger rotational movement of the vapor deposition source 101 and the rotary driver 113 to different rotational positions. The vapor deposition source can be rotated using the rotary driver 113 at least between a deposition position for coating a substrate and an "idle position," in which the first row of nozzles is directed toward a shielding wall, referred herein as "idle shield 202," which is disposed inside a vacuum chamber and partially surrounds the vapor deposition source. The vapor deposition source can be rotated to an idle position during idle time in the deposition system, for example, when no substrate to be coated is arranged in front of the vapor deposition source.

[0053] The vapor deposition source arrangement 100 includes a shielding arrangement 200 that partially surrounds the vapor deposition source and includes an idle shielding element 202. In an idle position of the vapor deposition source, a first row of nozzles 111 points towards the idle shielding element 202, such that a first material ejected from the first row of nozzles is guided onto the inner shielding surface of the idle shielding element, which acts as a baffle wall and accumulates thereon (see [link]). Figure 4 This can reduce or prevent unwanted material deposition on other surfaces inside the vacuum chamber, such as the chamber walls, during the idle time of the deposition system.

[0054] However, if conventional shielding is used, there is still a risk that material may accumulate on various surfaces or chamber walls within the vacuum chamber as the vapor deposition source rotates between different rotational positions. Furthermore, in conventional systems, shielding elements used to shape or limit the opening angle of the vapor plume are typically mounted at the vapor deposition source. This reduces the flexibility of adjusting the vapor plume opening angle and increases cleaning requirements. Additionally, the distance from the substrate to the nozzle may be greater, resulting in a larger processing chamber size.

[0055] In view of the above, embodiments of this disclosure reduce unwanted stray coatings on the surfaces of the vacuum chamber during source rotation and provide a simple and effective way to adjust the opening angle of a vapor plume ejected by nozzles from one or more nozzle rows.

[0056] The shielding arrangement 200 of the embodiments described herein includes an idle shielding member 202 and an additional shaper shielding member 201, the shaper shielding member 201 being connected to the idle shielding member 202, and particularly integrated with the idle shielding member 202 to form a continuous shielding surface partially surrounding the vapor deposition source. A rotary driver 113 is configured to rotate the vapor deposition source relative to both the idle shielding member 202 and the shaper shielding member 201. In other words, instead of being mounted at the vapor deposition source to be rotatable with it, the shaper shielding member 201 is connected to the idle shielding member 202 to form a shielding arrangement 200 that is rotationally stationary relative to the vapor deposition source. The shaper shielding member 201 includes a first slit 211 oriented (at least) substantially vertically. Figure 2 and Figure 3 At the first deposition position shown, the first row of nozzles 111 is aligned with the first slit 211 disposed in the shaper shield 201, such that the first slit 211 limits the first opening angle of the vapor plume ejected by the first row of nozzles.

[0057] In other words, the nozzles in the first row of nozzles are arranged to be aligned with the first slit in the first deposition position. "Aligned with the first slit" means that the position of the first row of nozzles allows at least a portion of the vapor plume ejected by the nozzles in the first row to propagate toward the substrate through the first slit, while another portion of the vapor plume is blocked by the shaper shield. Specifically, vapor particles from the vapor plume near the main deposition direction can propagate through the first slit, while vapor particles from the vapor plume horizontally away from the main deposition direction can be blocked by the shaper shield.

[0058] By providing a continuous shielding arrangement or shielding wall including an idle shielding 202 connected to the shaper shielding 201 and partially surrounding the vapor deposition source 101, the first material ejected by the first row of nozzles 111 can be blocked not only by the shielding arrangement 200 in the idle position, but also by the shielding arrangement 200 during the source's rotation between the idle position and the first deposition position, essentially until the vapor deposition source is positioned at the first deposition position. Specifically, even during source rotation, the first material can (only) escape from the shielding arrangement 200 through the first slit or through additional slits in the shaper shielding to propagate toward the substrate. Undesirable coatings on the chamber walls can be reduced or prevented. Specifically, the first material ejected by the first row of nozzles is guided onto the inner shielding surface of the shielding arrangement 200 to accumulate thereon, or guided through one or more slits in the shaper shielding to the substrate or onto the movable shielding 1030, which can move with the substrate past the vapor deposition source and can be used as an edge exclusion shielding (see...). Figure 1 This is true even during the rotation of the vapor deposition source.

[0059] The shaper shield 201 of the shield arrangement 200 is configured to shape the vapor plume ejected by the first row of nozzles 111. When the first row of nozzles is aligned with the first slit, the first slit 211 (i.e., the opposing wall edges of the shaper shield forming the first slit) restricts the vapor plume ejected by the first row of nozzles. "Shaping" the vapor plume refers to blocking a portion of the vapor plume, i.e., limiting the opening angle of the vapor plume on (at least) one side of the vapor plume. In particular, since the first slit is oriented substantially vertically, the opening angle of the vapor plume from a row of nozzles can be restricted to one or two opposing horizontal sides of the corresponding principal vapor deposition direction. Specifically, the slit width and slit shape can be adapted to shape the vapor plumes of all nozzles in the first row of nozzles in a substantially corresponding manner.

[0060] Therefore, by utilizing the vapor deposition source arrangement described herein, cleaning work can be reduced, and shaper shielding can be appropriately used to shape and limit the vapor plume ejected from the first row of nozzles, for example, to avoid shielding effects in various directions and / or to increase or decrease deposition under overhangs relative to deposition on uncovered substrate areas, as explained in further detail below.

[0061] Figure 3 This is a schematic diagram in a horizontal cross-section of a vapor deposition source arrangement 100 having a vapor deposition source 101 according to an embodiment described herein. The vapor deposition source 101 includes a first vapor distribution conduit 110, an optional second vapor distribution conduit 120, and an optional third vapor distribution conduit 130. The first vapor distribution conduit 110 has a first row of nozzles 111 having a first principal vapor deposition direction M1 for depositing a first material onto a substrate. The optional second vapor distribution conduit 120 has a second row of nozzles 121 for depositing a second material onto a substrate. The optional third vapor distribution conduit 130 has a third row of nozzles 131 for depositing a third material onto a substrate. The vapor distribution conduits are mounted adjacent to each other on a rotatable source body 301, which can be utilized by a rotary actuator (…). Figure 3 (Not shown in the image) rotates about the axis of rotation R1.

[0062] The vapor deposition source arrangement 100 also includes a cover device 200 that partially surrounds the vapor deposition source 101, wherein the cover device 200 includes a shaper shield 201 and an idler cover 202. Figure 3 At the first deposition position shown, the first row of nozzles 111 is aligned with the first slit 211 disposed in the shaper shield 201, such that the first slit 211 limits the first opening angle (β1) of the vapor plume ejected by the nozzles in the first row of nozzles.

[0063] Figure 4 It shows Figure 3After the vapor deposition source 101 is rotated about the rotation axis R1 to an idle position, for example, at an angle of 30° or greater and 180° or less, particularly 60° or greater and 120° or less. In the idle position, the first row of nozzles 111 of the first vapor distribution conduit 110 (and optional additional rows of nozzles of optional additional vapor distribution conduits) are guided to the idle shield 202, which acts as a baffle. In particular, the vapor propagation paths of the first row of nozzles 111 and (optionally) all) of the other nozzle rows are blocked / covered by the idle shield 202, causing the vapor material ejected from the nozzle rows to impact and accumulate on the inner wall surface of the idle shield.

[0064] Figure 3 and Figure 4 The arrangement of the vapor deposition source may include Figure 2 Some or all of the characteristics of the vapor deposition source arrangement can be found in the above description, and will not be repeated here.

[0065] A controller may be provided for triggering the rotation of the evaporation source to a first deposition position before the substrate 10 is transported past the evaporation source 101 for coating, and / or triggering the rotation of the evaporation source to an idle position after the substrate is transported past the evaporation source. During the movement of the substrate 10 past the evaporation source, the evaporation source may be maintained at... Figure 3 In the first deposition position shown, the first row of nozzles is aligned with the first slit of the shaper shield, and optionally, another row of nozzles is aligned with the first slit or one or more additional slits of the shaper shield.

[0066] like Figure 3 and Figure 4 As shown, the idle shield 202 may partially surround the vapor deposition source 101, particularly at an angle of 90° or greater, 180° or greater, or even 270° or greater. Specifically, the idle shield 202 may have a shielding wall having a curved, rounded, and / or circular profile in a horizontal cross-section, the shielding wall being at an angle of at least 90° (particularly 120° or greater) about the rotation axis R1 and the vapor deposition source 101. Even if the vapor deposition source includes two, three, or more rows of nozzles arranged adjacent to each other at the front side 60 of the vapor deposition source, reliable shielding of the vapor material emitted by the vapor deposition source in the idle position can be ensured. For example, as... Figure 2-4 As shown, the idle shield 202 can partially surround the vapor deposition source in a shell-like, substantially tubular, or substantially cylindrical manner.

[0067] In some embodiments described herein, the idle shield 202 and the shaper shield 201 are connected to each other to form a continuous shielding interface between them. In other words, during the rotation of the vapor deposition source between a first deposition position and an idle position, there is generally no gap or opening between the idle shield and the shaper shield through which vapor material can propagate. Instead, the interface between the idle shield and the shaper shield can be configured as a continuous shielding wall. Specifically, the shaper shield and the idle shield can be formed as a continuous shielding wall that partially surrounds the vapor deposition source and includes one or more substantially vertical slits configured to align with one or more nozzle rows at the deposition position. This reduces or avoids material buildup on other surfaces in the vacuum chamber and reduces cleaning work.

[0068] The first slit 211 of the shaper shield (and optionally another slit) may have a slit width of 3 cm or more and 30 cm or less in a direction perpendicular to the longitudinal direction of the slit. The slit width may depend on the distance between the shaper shield and the corresponding nozzle row in the first deposition position. For example, the distance between the first row of nozzles 111 and the shaper shield 201 may be 10 cm to 30 cm, and the slit width of the first slit 211 may be 5 cm to 30 cm.

[0069] In some embodiments that can be combined with other embodiments described herein, the vapor deposition source 101 further includes a second vapor distribution conduit 120 having a second row of nozzles 121 for depositing a second material on a substrate. At a first deposition position, the second row of nozzles 121 may be aligned with a second slit 212 in the shaper shield 201, wherein the second slit is configured to limit a second opening angle (β2) of the vapor plume ejected by the second row of nozzles 121. The first slit 211 and the second slit 212 may each have a substantially vertical orientation. In particular, the orientation of the slits may be adapted to the orientation of the corresponding nozzle row such that the vapor plumes of all nozzles in the nozzle row can be shaped in a substantially corresponding manner when propagating through the corresponding vertically oriented slit aligned with the corresponding nozzle row.

[0070] In some embodiments that can be combined with other embodiments described herein, the vapor deposition source 101 further includes a third vapor distribution conduit 130 having a third row of nozzles 131 for depositing a third material on the substrate. At a first deposition location, the third row of nozzles 131 may be aligned with a third slit in the shaper shield 201, wherein the third slit is configured to limit a third opening angle of the vapor plume ejected by the third row of nozzles 131. The third slits of the shaper shield may each have a substantially vertical orientation. In other embodiments, vapor plumes ejected by two (or more) rows of nozzles may be shaped by a common substantially vertically oriented slit of the shaper shield (see, for example...). Figure 5 ).

[0071] Therefore, a vapor plume ejected from the nozzles of two or more nozzle rows can be shaped by one or more slits in the shaper shield. In some embodiments, each nozzle row may have an associated slit configured to shape the vapor plume ejected by the nozzle row. In some embodiments, two or more nozzle rows may be associated with a common slit of the shaper shield at a first deposition location (see...). Figure 5 This ensures better directionality of the vapor plume, reduces the shadowing effect, and minimizes deposition on other surfaces within the vacuum chamber.

[0072] In some embodiments that can be combined with other embodiments described herein, the first row of nozzles and the second row of nozzles are tilted toward each other to enable the co-deposition of a mixed material layer onto the substrate by co-depositing a first material from the first row of nozzles and a second material from the second row of nozzles. The shaper shield 201 may be configured to limit the opening angle of the vapor plumes ejected by the first row of nozzles and the second row of nozzles. In particular, the shaper shield 201 may be configured to ensure a large overlap area of ​​the first and second materials on the substrate, for example, by limiting the vapor plume ejected by the first row of nozzles and / or by limiting the vapor plume ejected by the second row of nozzles. The first impact area of ​​the first material on the substrate may substantially overlap with the second impact area of ​​the second material on the substrate, particularly with an overlap ratio of 80% or greater, particularly 90% or greater. The overlap ratio may be defined as the ratio between the first impact area and the overlapping area or the ratio between the second impact area and the overlapping area. A high-quality mixed material layer can be deposited onto the substrate.

[0073] In some embodiments that may be combined with other embodiments described herein, the first vapor distribution conduit 110 is configured as a substantially vertical line source on the rotatable source body 301. Two, three, or more vapor distribution conduits configured as substantially vertical line sources may be mounted on the rotatable source body 301.

[0074] The height of the shielding arrangement 200 (particularly the height of the shaper shield and the freestanding shield) can be 150 cm or greater, particularly 200 cm or greater. Alternatively or additionally, the inner shielding surface of the shielding arrangement 200 facing the vapor deposition source can have a height of 1 m. 2 Or a larger surface area, especially 2m 2 Or larger, or even 3m 2Or even larger. A large inner shielding surface of the shielding arrangement ensures effective and reliable shielding at different rotational positions of the vapor deposition source, as well as if the vapor deposition source is long and suitable for coating large-area substrates (e.g., vapor distribution pipes may have a height of 1 m or greater, and in some embodiments 1.5 m or greater). The curvature and / or radius of the idle shielding can be adapted to the curvature and / or radius of the rotational trajectory of the nozzle row during rotational motion. For example, during rotation of the vapor deposition source between a first deposition position and an idle position, the distance between the first row of nozzles and the inner shielding surface of the idle shielding can be maintained in the range of 5 cm to 30 cm, particularly in the range below 10 cm.

[0075] In some embodiments, the first slit 211 of the shaper shield may be configured to limit the first opening angle (β1) to 40° or greater and 100° or less, particularly 50° or greater and 90° or less. The term "opening angle" for a vapor plume as used herein refers to the plume opening angle in a horizontal cross-section (see [link to documentation]). Figure 3 The first slit 211 may limit the first opening angle of the vapor plume from the first row of nozzles only on one side of the first primary vapor deposition direction M1 or alternatively on both opposite sides of the first primary vapor deposition direction M1. Specifically, a portion of the vapor plume on (only) one side of the first primary vapor deposition direction M1 may be blocked by the shaper shield, or a portion of the vapor plume on both opposite sides of the first primary vapor deposition direction M1 may be blocked by the shaper shield. In other words, the first slit 211 may limit the first opening angle on one or both sides of the primary vapor deposition direction M1. A predetermined “coating window” on the substrate through the first row of nozzles can be ensured. Similarly, a predetermined “coating window” on the substrate through an optional second and / or third row of nozzles can be ensured by corresponding slits in the shaper shield. For example, good overlap between the two coating windows provided by the first and second rows of nozzles can be ensured by corresponding shaping of the vapor plume with the shaper shield 201 as described herein. Alternatively or additionally, the overlap between the two coating windows provided by the first row of nozzles and the third row of nozzles can be reduced or avoided by the corresponding shaping of the vapor plumes ejected by the first row of nozzles and the third row of nozzles having a shaper shield 201 as described herein.

[0076] According to some embodiments, the first primary evaporation direction M1 and the second primary evaporation direction M2 are inclined toward each other so that the mixed material layer can be co-deposited onto the substrate, and the third row of nozzles 131 can be configured to deposit another layer comprising a third material onto the substrate above or below the mixed material layer. In particular, the first primary evaporation direction M1 and the third primary evaporation direction M3 may be inclined away from each other so that an additional layer can be deposited above or below the mixed material layer.

[0077] The shaper shield 201 can be configured to increase the overlap ratio between the steam plumes ejected from the first row of nozzles and the second row of nozzles, and / or the shaper shield 201 can be configured to reduce or prevent overlap between the steam plumes ejected from the first row of nozzles and the third row of nozzles. Therefore, another layer deposited using the third steam distribution conduit can be deposited above or below the mixed material layer co-deposited with the first and second steam distribution conduits. Reliable shaping (increasing or decreasing the corresponding steam plume overlap) can be ensured by providing one, two, or three slits in the shaper shield.

[0078] In some embodiments that can be combined with other embodiments described herein, a substrate 10 having a structure formed thereon is coated with a vapor deposition source arrangement. This structure includes a first sidewall 11 adjacent to the pixel region 13 and a first overhang 12 extending at least partially over the pixel region 13 from the first sidewall. Figure 8 The OLED layer stacks illustrated herein can be deposited on a substrate on which such overhanging structures are formed. In particular, according to some embodiments described herein, a vapor deposition source is used to coat the substrate on which the structures are formed with one or more organic materials or one or more metals of the OLED layer stacks.

[0079] exist Figure 3 In this process, the vapor deposition source 101 is rotated about the rotation axis R1 to the first deposition position by using a rotary driver, thereby positioning the vapor deposition source 101 at the first deposition position. In some embodiments, a controller is provided ( Figure 2 The diagram depicts a controller 114, configured to trigger the evaporation source to rotate to a first deposition position before the substrate is transported past the evaporation source 101 for coating. The controller may be further configured to trigger the evaporation source to rotate back to an idle position after the substrate has been transported past the evaporation source. When a subsequent substrate is transported past the evaporation source, the controller 114 may again trigger the evaporation source to rotate to the first deposition position.

[0080] Optionally, in the first deposition position, the first principal evaporation direction M1 of the nozzles of the first row of nozzles 111 may be tilted at a first tilt angle α1 relative to the surface normal SN of the substrate. Tilted deposition can, for example, increase or decrease the deposition of the first material below the first overhang 12. In particular, in some embodiments, the nozzle channels of the first row of nozzles are not perpendicular to the substrate surface, but are tilted. In some embodiments, the first tilt angle α1 relative to the surface normal of the substrate in the first deposition position is 15° or greater, particularly 25° or greater, or even 35° or greater.

[0081] The first slit 211 of the shaper shield 201 is aligned with the first row of nozzles 111 at the first deposition position, such that the vapor plume is directed onto the substrate, which is inclined relative to the substrate normal and has a limited opening angle. The shaped and inclined vapor plume ejected by the nozzle row is particularly suitable for increasing (or ensuring) or reducing (or avoiding) material deposition below overhangs. Specifically, according to the embodiments described herein, the inclination and shaping of the vapor plume can be provided.

[0082] In some embodiments, compared to a primary evaporation direction perpendicular to the substrate surface, a first primary evaporation direction M1 is inclined "towards" the region below the first protrusion 12 to increase the deposition of the first material in the region below the first protrusion 12. Specifically, the first material may be a metal, particularly silver, and in the first deposition location, the first primary evaporation direction M1 is inclined to increase the contact area between the metal and the first sidewall below the first protrusion. Using the first vapor distribution conduit 110, a cathode layer having improved electrical contact with the first sidewall 11 can be deposited.

[0083] At the first deposition position, a shaper shield 201 is disposed in front of the first row of nozzles 111 to limit the first opening angle of the vapor plume ejected by the first row of nozzles. In some embodiments, the shaper shield 201 is configured to shape the vapor plume asymmetrically with respect to a first primary deposition direction M1. In other words, as Figure 3 The schematic depiction shows that the first sub-angle of the opening angle on the first side of the main evaporation direction M1 can be greater than the second sub-angle of the opening angle on the second side of the main evaporation direction M1. By asymmetrically shaping the vapor plume, the deposition below the first overhang can be increased relative to the deposition in the opposite direction. More specifically, the ratio between the first deposition amount in the region below the first overhang and the second deposition amount on the uncovered area of ​​the substrate can be increased by asymmetrically cutting the vapor plume on its two opposite sides. Or, to express it differently: the thickness of the deposition material below the first overhang can be increased relative to the thickness of the deposition material on the uncovered substrate area. Furthermore, a vapor plume with better focusing and / or better directionality can be provided.

[0084] Specifically, the shaper shield 201 described herein ensures that the opening angle of the vapor plume ejected by the first row of nozzles is suitable for ensuring a suitable ratio between the thickness of the deposited layer in the region below the first overhang and in the uncovered region of the substrate. Furthermore, the extent to which each layer reaches below the overhang can be appropriately set by one or both of the following: (i) limiting the opening angle of the vapor plume, particularly asymmetrically relative to the main deposition direction, and (ii) ensuring that the main deposition direction of the vapor plume is inclined relative to the surface normal of the substrate. The position and / or width of the slits in the shaper shield can be appropriately adjusted.

[0085] When the vapor deposition source is positioned in the first deposition location, angled deposition of one or more materials on the substrate can ensure increased or decreased material deposition in the region below the overhang, which can be beneficial for the deposition of OLED layer stacks. Specifically, the cathode layer can be deposited via angled deposition below the overhang, thereby ensuring good electrical contact between the cathode material and the first sidewall 11. Furthermore, an organic layer can be deposited via angled deposition to reduce or prevent contact between the organic layer and the first sidewall 11 below the overhang.

[0086] like Figure 3 As shown, two or more vapor distribution channels of the vapor deposition source define a front side 60 of the vapor deposition source. The front side 60 of the vapor deposition source refers to the side of the vapor deposition source that includes one or more rows of nozzles and is arranged opposite the rear side 61 of the vapor deposition source. During material deposition on the substrate, the front side 60 faces the substrate. The front side 60 of the vapor deposition source may, for example, be defined as a line intersecting the first row of nozzles 111 (or, in the case of several rows of nozzles, the center row of nozzles) and extending tangentially along the rotation trajectory of the first row of nozzles 111. Alternatively, the front side 60 of the vapor deposition source may be defined as extending along a connecting line that connects the geometric centers of two or more vapor distribution channels of the vapor deposition source in a horizontal cross-section.

[0087] According to some embodiments, in the first deposition position, the front side 60 of the vapor deposition source is inclined at a first sub-angle x1 relative to the substrate transport path T, and the front surface of the first vapor distribution pipe 110, which is provided with a first row of nozzles 111, is inclined at a second sub-angle x2 relative to the front side 60 of the vapor deposition source. The sum of the first sub-angle x1 and the second sub-angle x2 defines a first tilt angle α1 of the first main vapor deposition direction M1 relative to the surface normal SN of the substrate.

[0088] Specifically, the first sub-angle x1 can be 10° or greater, particularly 15° or greater, and the second sub-angle x2 can be 15° or greater, particularly 25° or greater. Therefore, the first tilt angle α1 of the first principal vapor deposition direction M1 relative to the surface normal can be 25° or greater, particularly 40° or greater.

[0089] In other words, the first tilt angle α1 of the first primary vapor deposition direction M1 relative to the surface normal can be based on two contributing factors: (1) the tilt of the first row of nozzles 111 relative to the front side 60 (i.e., the nozzle channel is not perpendicular to the front side 60), and (2) the tilt of the front side 60 of the entire vapor deposition source relative to the previous deposition position, wherein the front side 60 is parallel to the substrate transport path T. The first contributing factor can be obtained and adjusted, for example, by the specific geometry and / or arrangement of the front surface of the first vapor distribution conduit and / or the first row of nozzles, such that the nozzle channel of the first row of nozzles is tilted relative to the front side 60 (i.e., not perpendicular).

[0090] The two factors mentioned above that affect the first tilt angle α1 can increase the total tilt of the first primary evaporation direction M1 relative to the surface normal SN, thereby further increasing or decreasing deposition below the overhang, depending on the material or layer to be deposited. Furthermore, the primary evaporation directions of several nozzle rows can be tilted uniformly (e.g., via source rotation) and tilted relative to each other (e.g., by tilting the nozzle rows 60 degrees relative to the front side of the evaporation source), which increases flexibility and allows for the deposition of a specific layer onto the substrate using a single evaporation source. This improves deposition rate and deposition flexibility.

[0091] In some embodiments that can be combined with other embodiments described herein, the second principal evaporation direction M2 of the second row of nozzles 121 and the first principal evaporation direction M1 of the first row of nozzles 111 are inclined toward each other to achieve co-deposition of the mixed material layer on the substrate at the first deposition location. Specifically, the first row of nozzles 111 and the second row of nozzles 121 may be mounted such that the first principal evaporation direction and the second principal evaporation direction are close to each other. Specifically, the first vapor plume ejected by the first row of nozzles and the second vapor plume ejected by the second row of nozzles may overlap during propagation to achieve co-deposition of the two materials for forming a mixed material layer on the substrate.

[0092] In some embodiments, during the transport of the substrate 10 through the vapor deposition source 101, a mixed material layer (particularly a mixed metal layer) is co-deposited onto the substrate using a first vapor distribution pipe and a second vapor distribution pipe. Alternatively, a mixed organic layer comprising at least two different organic materials is co-deposited onto the substrate, wherein the first row of nozzles and the second row of nozzles are inclined toward each other.

[0093] The hybrid metal layer may be a cathode layer of the OLED layer stack, particularly a cathode layer comprising co-deposited silver and magnesium. The hybrid organic layer may be an organic layer of the OLED layer stack. In some embodiments, the evaporation source is configured to coat a substrate with a hybrid organic layer, which is co-deposited using a first vapor distribution channel and a second vapor distribution channel. In other embodiments, the evaporation source is configured to coat a substrate with a hybrid metal layer (particularly a cathode layer) co-deposited using a first vapor distribution channel and a second vapor distribution channel.

[0094] In some embodiments that can be combined with other embodiments described herein, the vapor deposition source 101 has a third vapor distribution conduit 130 having a third row of nozzles having a third principal vapor deposition direction. The third vapor distribution conduit may be configured to coat the substrate with another material layer above or below the layer deposited by the first (and / or second) vapor distribution conduit. Optionally, the third principal vapor deposition direction and the first principal vapor deposition direction are inclined away from each other so that two layers can be sequentially deposited on the substrate in a first deposition location, stacked on top of each other. In other words, the first row of nozzles and the third row of nozzles may be configured such that the first vapor plume ejected by the first row of nozzles and the third vapor plume ejected by the third row of nozzles do not overlap during propagation toward the substrate, such that individual layers can be deposited on top of each other using the first vapor distribution conduit and the third vapor distribution conduit.

[0095] Specifically, during the transport of the substrate through the vapor deposition source, the electron injection layer (EIL) can be deposited onto the substrate using a third vapor distribution channel 130, and the cathode layer can be (co-)deposited onto the electron injection layer using at least a first vapor distribution channel 110, particularly using the first and second vapor distribution channels simultaneously via co-deposition. Specifically, a co-deposited cathode layer can be deposited on top of the electron injection layer, wherein the co-deposited cathode layer is deposited using the first and second vapor distribution channels, and the electron injection layer is deposited using the third vapor distribution channel. Therefore, a single movement of the substrate through the vapor deposition source results in the substrate being coated with (at least) two layers on top of each other, at least one of which is a mixed material layer deposited via co-deposition.

[0096] In another embodiment, the third primary evaporation direction of the third row of nozzles may be tilted toward the first primary evaporation direction and the second primary evaporation direction to achieve co-deposition of a mixed material layer comprising at least three (identical or different) materials (such as...) deposited from at least three rows of nozzles. Figure 5 (As shown).

[0097] In some embodiments, the first material, the second material, and the third material are different materials, such as three different metals and / or three different organic materials. The first material, the second material, and the third material may optionally comprise the same components. For example, the first material, the second material, and / or the third material may comprise the same main component but different sub-components, such as different dopants. In other embodiments, the first material and the second material are the same material, but the third material is a different material. In still other embodiments, at least two of the first material, the second material, and the third material are the same material.

[0098] Figure 5This is a schematic diagram of the vapor deposition source arrangement according to an embodiment, viewed in a horizontal cross-sectional view. The vapor deposition source arrangement includes a vapor deposition source 101, which has a first vapor distribution conduit 110, a second vapor distribution conduit 120, and an optional third vapor distribution conduit 130. The first vapor distribution conduit 110 has a first row of nozzles, the second vapor distribution conduit 120 has a second row of nozzles, and the optional third vapor distribution conduit 130 has a third row of nozzles. A rotary driver is provided to rotate the vapor deposition source about a rotation axis.

[0099] A shielding arrangement 200 according to any of the embodiments described herein partially surrounds the vapor deposition source 101 and includes an idle shielding member 202 and a shaper shielding member 201. A rotary driver is configured to rotate the vapor deposition source relative to the shielding arrangement between an idle position and a first deposition position, in which a first row of nozzles is guided toward the idle shielding member 202, and in the first deposition position, the first and second rows of nozzles are aligned with a first slit 211 disposed in the shaper shielding member 201 and oriented substantially vertically. Optionally, a third row of nozzles may also be aligned with the first slit 211 in the first deposition position.

[0100] The first slit 211 is configured to limit a first opening angle β1 of the vapor plume ejected by the first row of nozzles, particularly on one (horizontal) side of the main vapor deposition direction of the first row of nozzles, and the first slit 211 is also configured to limit a second opening angle β2 of the vapor plume ejected by the second row of nozzles, particularly on one (horizontal) side of the main vapor deposition direction of the second row of nozzles. In other words, a slit can limit the opening angle of vapor plumes ejected by two or more rows of nozzles. Good overlap between vapor plumes ejected by two or more nozzle rows arranged adjacent to each other on a rotatable source body can be ensured. The quality of the mixed material layer deposited from two or more vapor distribution channels by co-deposition can be improved.

[0101] Alternatively, such as Figure 3 As schematically depicted, the shaper shield 201 may have two or more substantially vertically oriented slits, each associated with a single row of nozzles, such that vapor plumes ejected by the several rows of nozzles can be individually shaped on one or two opposite sides of the respective principal vapor deposition direction using the corresponding slits of the shaper shield.

[0102] Figure 6 This is a schematic perspective view of a vapor deposition source arrangement 100 according to embodiments described herein. The vapor deposition source arrangement may include... Figures 1 to 5 Some or all of the features of the embodiments shown are provided in reference to the above description and will not be repeated here.

[0103] The shroud assembly 200 of the vapor deposition source arrangement 100 includes an idler shroud 202 and a shaper shield 201. The vapor deposition source 101 can be rotated about an axis of rotation, for example, by 90° or greater, relative to the shield arrangement 200 partially surrounding the vapor deposition source. The shaper shield 201 includes a first slit 211 oriented substantially vertically and an optional second slit 212 oriented substantially vertically. The length of the slits can be at least as long as the nozzles in the corresponding row.

[0104] In the first deposition position, the first slit 211 may be positioned aligned with the first row of nozzles of the first vapor distribution conduit 110, and / or the second slit 212 may be positioned aligned with the second row of nozzles of the second vapor distribution conduit 120. The first slit 211 may be configured to shape the vapor plume ejected from the first row of nozzles by horizontally limiting the opening angle of the vapor plume on one or both opposite sides of the first primary vapor deposition direction of the first row of nozzles. In particular, the horizontal outer portion of the vapor plume may be blocked by a shaper shield. The optional second slit 212 may be configured to shape the vapor plume ejected from the second row of nozzles by horizontally limiting the opening angle of the vapor plume on one or both opposite sides of the second primary vapor deposition direction of the second row of nozzles. In particular, the horizontal outer portion of the vapor plume may be blocked by oppositely arranged edges of the shaper shield, which form the second slit therebetween. Additional slits and / or additional vapor distribution conduits are possible.

[0105] Shaper shield 201 and idler shield 202 are connected to each other to provide a continuous shielding interface between them. Therefore, the continuous shielding arrangement serving as the idler shield and shaper shield partially surrounds the vapor deposition source. One or more vertical slits are provided in the shaper shield to limit the opening angle of the vapor plume ejected by one or more corresponding nozzle rows.

[0106] like Figure 6 As schematically depicted, the shaper shield 201 may include shielding plates 230 arranged adjacent to each other. A first slit 211, an optional second slit 212, and optional additional slits are located between two adjacent shielding plates. For example, two substantially vertically oriented shielding plates of the shaper shield may be arranged with a gap therebetween, forming a substantially vertically extending first slit 211. More than two shielding plates 230 may be provided, wherein substantially vertically extending slits are formed between two adjacent shielding plates.

[0107] The shielding plate 230 may be a single, integral component, or it may comprise two or more plate components connected to each other to form a shielding plate. If the shielding plate includes sub-components that can be connected to each other, it facilitates the transport and installation of the shaper shielding component. The shielding plates may each have a height of 150 cm or greater, particularly 200 cm or greater. Alternatively or additionally, the idle shielding component 202 may comprise one, two, or more wall components connected to each other to form a continuous shielding wall that partially surrounds the vapor deposition source, particularly in a curved or circular profile.

[0108] The shielding plate 230 may be a substantially flat shielding plate, such as a substantially flat metal plate, particularly a metal sheet. In particular, the idle shielding member 202 may include a curved shielding wall that partially surrounds the vapor deposition source in the circumferential direction. The shaper shielding member 201 may include two or more substantially flat shielding plates arranged adjacent to each other between the vapor deposition source and the substrate transport path.

[0109] In some embodiments, the idle shield 202 includes a door that can be opened to allow access to the vapor deposition source. For example, the vapor deposition source can be accessed from an idle position via the door in the idle shield for repair or maintenance.

[0110] The idle shielding can be cooled, for example, actively cooled using a cooling device (e.g., a water cooling device), to ensure that vapor material impacting the inner wall surface of the idle shielding condenses and adheres thereto. The idle shielding can be cleaned, for example, at regular cleaning intervals. Cleaning of the idle shielding may include partially or completely removing material accumulated on the idle shielding by the vapor deposition source during idle periods. Additionally, the shaper shielding can be cleaned, for example, at regular intervals to remove material accumulated on the shielding plate.

[0111] In some embodiments that can be combined with other embodiments described herein, the position of the shield 230 relative to the vapor deposition source 101, the slit width of the first slit 211, and / or the slit width of optional other slits are adjustable. Alternatively or additionally, one or more shields of the shaper shield may be interchanged with shields having other widths. For example, the width of the first slit may be increased to increase the first opening angle of the vapor plume propagating from the first row of nozzles through the first slit toward the substrate. For example, the width of the first slit may be decreased to more strongly limit the first opening angle of the vapor plume ejected by the first row of nozzles. For example, the position of one or more shields may be modified, for example, by displacing one or more shields in a substantially circumferential direction of the vapor deposition source, to modify the shape of the vapor plume propagating through the shaper shield. In some embodiments, the position and / or width of the first slit may be adapted to a predetermined first tilt angle of a first primary vapor deposition direction and / or a predetermined opening angle or shape of the vapor plume to be provided. For example, the asymmetry of the vapor plume relative to the first main evaporation direction can be modified by differently reducing or increasing the slit width on the two opposite horizontal sides of the first main evaporation direction.

[0112] In some embodiments, the shielding arrangement 200 has a retaining frame 240, wherein upper and lower sections of the shielding plate 230 are removably mounted at the retaining frame 240, displaceable relative to the retaining frame, and fixed at the retaining frame in various locations. For example, the upper and / or lower sections of the shielding plate 230 may be fixed at the retaining frame with fixing elements (e.g., screws or clamps) that may be removed or released to allow the shielding plate 230 to be displaced along the longitudinal direction of the retaining frame 240. Each shielding plate may be fixed at various locations along the longitudinal direction of the retaining frame to accommodate slit widths and / or slit positions. Alternatively or additionally, one or more shielding plates may be removed from the retaining frame and replaced with other shielding plates of different widths. Thus, the shaper shielding can be adjusted to the number of nozzle rows of the vapor deposition source and various predetermined tilt angles and predetermined plume widths or shapes of one or more nozzle rows.

[0113] In some embodiments, the shaper shield 201 includes at least three shielding plates, wherein the first slit 211 and the second slit 212 are located between respective adjacent shielding plates. In the first deposition position, the first row of nozzles 111 is aligned with the first slit 211, and the second row of nozzles 121 of the second vapor distribution conduit 120 is aligned with the second slit 212.

[0114] In some embodiments that can be combined with other embodiments described herein, the shielding arrangement may further include a top shield 250 connected to the upper portion of the idle shield 202 and / or the upper portion of the shaper shield 201, wherein the top shield is oriented substantially horizontally. Alternatively or additionally, the shielding arrangement may include a bottom shield 260 connected to the lower portion of the idle shield 202 and / or the shaper shield 201, wherein the bottom shield is oriented substantially horizontally. Specifically, the idle shield and the shaper shield may be oriented substantially vertically corresponding to the orientation of the vapor distribution conduit of the vapor deposition source, while the top shield and / or the bottom shield may be oriented substantially horizontally.

[0115] In at least one of the idle position and the first deposition position of the vapor deposition source, the top shield 250 may be arranged above the propagation path of the vapor plume ejected by the first row of nozzles. The top shield may be configured to reduce or prevent vapor from leaving the area between the shield arrangement and the vapor deposition source in the upward direction. In at least one of the idle position and the first deposition position, the bottom shield 260 may be arranged below the propagation path of the vapor plume ejected by the first row of nozzles. The bottom shield may be configured to reduce or prevent vapor from leaving the area between the shield arrangement and the vapor deposition source in the downward direction. In particular, the top shield may be formed as a top cover that at least partially covers the area between the idle shield and / or the shaper shield and the vapor deposition source. The bottom shield may be formed as a lower cover that at least partially closes the area between the idle shield and / or the shaper shield and the vapor deposition source towards the bottom. This can reduce or prevent coating on other surfaces and / or chamber walls inside the vacuum chamber and can reduce cleaning requirements.

[0116] In some embodiments, the shaper shield, including the first slit 211 and optionally additional slits, is not precisely vertically oriented, but rather slightly tilted relative to the direction of gravity, corresponding to the inclination of the substrate and vapor distribution conduit, for example, at an angle of 1° or greater and 10° or less, particularly 2° or greater and 6° or less. This tilting of the shaper shield relative to the vertical direction can be advantageous, considering the slight tilt of the vapor distribution conduit and / or substrate relative to vertical orientation during deposition, such as an angle of 1° or greater and 10° or less. By slightly tilting the shaper shield in accordance with the inclination of the corresponding nozzle row, the vapor plume of the upper nozzles of the nozzle row can be shaped to better correspond in shape and opening angle to the vapor plume of the lower nozzles of the nozzle row.

[0117] In some embodiments, the shape and width of the first slit are adapted to ensure that all steam plumes ejected by the first row of nozzles along the longitudinal direction of the steam distribution conduit have the same opening angle. In other words, all steam plumes ejected by the first row of nozzles can be constrained by the shaper shield to impact the substrate at a corresponding opening angle and / or a corresponding tilt angle. This also applies to steam plumes ejected by an optional additional row of nozzles, which are shaped by an optional additional slit of the shaper shield.

[0118] For example, if the shaper shield is parallel to the first row or nozzles at the first deposition position, the slit width of the first slit can be constant along its entire length, and the first slit can have a substantially rectangular shape. On the other hand, if the shaper shield is not perfectly parallel to the first row of nozzles at the first deposition position (e.g., if the shaper shield is inclined relative to the vertical direction, the distance between the first vapor distribution conduit and the shaper shield can vary from the top to the bottom of the first row of nozzles, depending on the corresponding rotational position of the vapor deposition source and / or the circumferential position of the corresponding vapor distribution conduit at the vapor deposition source). The geometry of the first slit can be adapted along its longitudinal direction to ensure corresponding shapes for all vapor plumes from the first row of nozzles. Specifically, the shape of the first slit can be (slightly) trapezoidal and / or the slit width can have (slightly) variation along the longitudinal direction of the slit, particularly increasing towards the bottom of the slit.

[0119] Therefore, in some embodiments, the first slit (and optionally another slit) of the shaper shield may have a constant slit width and may be rectangular. Alternatively or additionally, at least one slit may have a varying slit width and / or trapezoidal geometry to ensure that all vapor plumes ejected by an associated row of nozzles have corresponding shapes, such that the vapor plumes of that row impact the substrate surface at corresponding opening angles.

[0120] Figure 7 This is a flowchart schematically illustrating the coating method described herein. The coating method can be performed in a vapor deposition system and / or using any of the vapor deposition source arrangements according to the embodiments described herein.

[0121] In block 791, the method includes rotating a vapor deposition source relative to a shielding arrangement 200 about a rotation axis from an idle position to a first deposition position. In the idle position, a first row of nozzles is guided toward the idle shielding. In the first deposition position, the first row of nozzles is aligned with a first slit 211 disposed in the shaper shielding and oriented substantially vertically.

[0122] In block 792, the substrate is transported through a vapor deposition source maintained in a first deposition position, while a first material is guided from a first row of nozzles toward the substrate. During the transport of the substrate through the vapor deposition source, a first slit 211 limits a first opening angle (β1) of the vapor plume ejected from the first row of nozzles.

[0123] In block 793, after the substrate is transported past the vapor deposition source, the vapor deposition source is rotated about the rotation axis relative to the shielding member and returned to the idle position, in which the first row of nozzles is guided toward the idle shielding member.

[0124] Before transporting the subsequent substrate past the vapor deposition source, the vapor deposition source can be rotated again to the first deposition position or another deposition position to coat the subsequent substrate.

[0125] The rotation of the vapor deposition source can be triggered by a corresponding controller.

[0126] In the first deposition position, the first primary evaporation direction M1 of the first row of nozzles may be tilted at a first tilt angle (α1) relative to the surface normal of the substrate. The first tilt angle may be 15° or greater, particularly 35° or greater.

[0127] A substrate having a structure formed thereon as a "mask layer" can be coated, particularly one or more layers of OLED layer stacks. The structure may include a first sidewall 11 adjacent to the pixel region 13 and a first overhang 12 extending from the first sidewall. The vapor deposition source may be one or more organic materials or one or more metals of the OLED layer stacks coated onto the substrate.

[0128] In some embodiments, the vapor deposition source 101 further includes a second vapor distribution conduit 120 having a second row of nozzles 121 for depositing a second material on a substrate, and optionally a third vapor distribution conduit 130 having a third row of nozzles 131 for depositing a third material on the substrate. In an idle position, the first row of nozzles, the second row of nozzles, and (optionally) the third row of nozzles may be directed toward the surface of an inner shield that blocks vapor ejected from the nozzle rows. In a first deposition position, the first row of nozzles, the second row of nozzles, and optionally the third row of nozzles may be aligned with at least one of a first slit and one or more additional slits disposed in the shaper shield 201 to limit the opening angle of the vapor plume ejected by at least one of the first row, the second row, and optionally the third row of nozzles, particularly limiting the opening angle of the vapor plume ejected by the first row, the second row, and the third row of nozzles.

[0129] Therefore, based on the embodiments described herein, improved vapor deposition source arrangements and improved coating methods are provided, particularly for “maskless” OLED pixel deposition that does not use fine metal masks. A shaper shield reduces cleaning work and improves the directionality of the vapor plume ejected from multiple rows of nozzles, integrated with an idler shield to provide a continuous shielding surface that partially surrounds the vapor deposition source.

[0130] While the foregoing describes embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the appended claims.

[0131] In particular, this written description uses examples to disclose the contents of this disclosure, including best practices, and also enables any person skilled in the art to practice the described subject matter, including making and using any apparatus or system and performing any combined methods. While various specific embodiments have been disclosed for the foregoing, the mutually non-exclusive features of the above embodiments can be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims if a claim has structural elements that are not different from the literal language of the claim, or if a claim includes equivalent structural elements that are not substantially different from the literal language of the claim.

Claims

1. A vapor deposition source arrangement (100) for coating a substrate (10), comprising: A vapor deposition source (101) has a first vapor distribution conduit (110) having a first row of nozzles (111) for depositing a first material on the substrate; A rotary driver (113) is used to rotate the vapor deposition source about a rotation axis (R1); as well as A shielding arrangement (200) partially surrounds the vapor deposition source and includes an idle shield (202) and a shaper shield (201). The rotary driver is configured to rotate the vapor deposition source relative to the shielding arrangement between an idle position and a first deposition position, in which the first row of nozzles is guided toward the idle shield (202), and in the first deposition position, the first row of nozzles is aligned with a substantially vertically oriented first slit (211) disposed in the shaper shield (201), the first slit (211) being configured to limit a first opening angle (β1) of the vapor plume ejected by the first row of nozzles.

2. The vapor deposition source arrangement as claimed in claim 1, wherein the first vapor distribution conduit (110) is configured as a substantially vertical line source on a rotatable source body, the shielding arrangement (200) has a height of 150 cm or greater, and the inner shielding surface of the shielding arrangement (200) facing the vapor deposition source is 1 m. 2 Or larger.

3. The vapor deposition source arrangement as claimed in claim 1 or 2, wherein the first slit (211) of the shaper shield (201) is configured to limit the first opening angle (β1) to 40° or greater and 100° or less.

4. The vapor deposition source arrangement as claimed in any one of claims 1 to 3, wherein the free shield (202) partially surrounds the vapor deposition source (101) at an angle between 90° and 270° in a substantially shell-like, tubular or cylindrical manner.

5. The vapor deposition source arrangement as claimed in any one of claims 1 to 4, wherein the vapor deposition source (101) further includes a second vapor distribution conduit (120) having a second row of nozzles (121) for depositing a second material on the substrate, and at the first deposition position, the second row of nozzles (121) is aligned with a substantially vertically oriented second slit (212) in the shaper shield (201), the second slit being configured to limit a second opening angle (β2) of the vapor plume ejected by the second row of nozzles (121).

6. The vapor deposition source arrangement as claimed in any one of claims 1 to 5, wherein the vapor deposition source is configured to coat the substrate with a mixed organic layer co-deposited using two or more vapor distribution channels of the vapor deposition source.

7. The vapor deposition source arrangement as claimed in any one of claims 1 to 6, wherein the idle shield (202) and the shaper shield (201) are connected to each other to provide a continuous shielding interface between the idle shield and the shaper shield.

8. The vapor deposition source arrangement as claimed in any one of claims 1 to 7, wherein the shaper shield (201) comprises a shield (230), wherein the first slit and optionally a further slit are located between the shield.

9. The vapor deposition source arrangement as claimed in claim 8, wherein the position of the shielding plate (230) relative to the vapor deposition source (101) or the slit width of the first slit (211) is adjustable.

10. The vapor deposition source arrangement as claimed in claim 8 or 9, wherein the shielding arrangement (200) includes a retaining frame (240), wherein the upper and lower sections of the shielding plate (230) are removably mounted at the retaining frame (240) at various positions that are displaceable relative to the retaining frame and can be fixed at the retaining frame.

11. The vapor deposition source arrangement as claimed in any one of claims 8 to 10, wherein the shaper shield (201) comprises at least three shielding plates, wherein the first slit (211) and the second slit (212) are located between corresponding adjacent shielding plates, and at the first deposition position, the first row of nozzles (111) is aligned with the first slit (211), and the second row of nozzles (121) of the second vapor distribution conduit (120) is aligned with the second slit (212).

12. The vapor deposition source arrangement as claimed in any one of claims 1 to 11, wherein the shielding arrangement (200) further comprises at least one of the following: A top shield (250) is connected to the upper portion of at least one of the idle shield (202) and the shaper shield (201) and is oriented substantially horizontally. The bottom shield (260) is connected to the lower portion of at least one of the idle shield (202) and the shaper shield (201) and is oriented substantially horizontally.

13. The vapor deposition source arrangement as described in any one of claims 1 to 12, further comprising: The controller (114) is configured to trigger the vapor deposition source to rotate to the first deposition position before transporting the substrate through the vapor deposition source (101) to coat the substrate, and to trigger the vapor deposition source to rotate to the idle position after transporting the substrate through the vapor deposition source.

14. The vapor deposition source arrangement as described in claim 13, wherein, At the first deposition location, the first principal vapor deposition direction (M1) of the first row of nozzles (111) is tilted at a first tilt angle (α1) of 25° or greater relative to the surface normal (SN) of the substrate, and the first row of nozzles (111) is aligned with the first slit (211).

15. The vapor deposition source arrangement as described in claim 14, wherein, At the first deposition position, the front side (60) of the vapor deposition source is inclined at a first sub-angle (x1) relative to the substrate transport path (T), and the front surface of the first vapor distribution pipe (110) provided with the first row of nozzles (111) is inclined at a second sub-angle (x2) relative to the front side (60) of the vapor deposition source.

16. A vacuum deposition system, comprising: First vacuum chamber (1001); According to any one of claims 1 to 15, the vapor deposition source arrangement (100) is in the first vacuum chamber; The substrate transport track (1013) is configured to move the substrate (10) along the substrate transport path (T) past the vapor deposition source arrangement; as well as A shielding transport track (1012) is located between the substrate transport track and the vapor deposition source arrangement (100) and is configured to move a movable shield (1030) in front of the substrate (10) to shield the edge region of the substrate.

17. A method for coating a substrate in a vacuum chamber having a vapor deposition source arrangement (100), the vapor deposition source arrangement comprising a vapor deposition source (101) having a first vapor distribution conduit (110) with a first row of nozzles (111) and a shielding arrangement (200) partially surrounding the vapor deposition source and including an idler shield (202) and a shaper shield (201), the method comprising: The vapor deposition source is rotated about a rotation axis (R1) relative to the shielding arrangement (200) from an idle position to a first deposition position, wherein, in the idle position, the first row of nozzles is guided toward the idle shielding, and, in the first deposition position, the first row of nozzles is aligned with a first slit (211) disposed in the shaper shielding that is substantially vertically oriented; and The substrate is transported through the vapor deposition source at the first deposition location while a first material is guided from the first row of nozzles toward the substrate, and the first slit (211) limits the first opening angle (β1) of the vapor plume ejected from the first row of nozzles.

18. The method of claim 17, wherein, In the first deposition location, the first primary evaporation direction (M1) of the first row of nozzles is tilted at a first tilt angle (α1) of 15° or greater relative to the surface normal of the substrate.

19. The method of claim 17 or 18, wherein the substrate has a structure formed thereon, the structure including a first sidewall (11) adjacent to the pixel region (13) and a first overhang (12) extending from the first sidewall (11), and The vapor deposition source is coated with one or more organic materials stacked with OLED layers or with one or more inorganic materials, particularly metals, onto the substrate.

20. The method of any one of claims 17 to 19, wherein the vapor deposition source (101) further comprises: The second vapor distribution conduit (120) has a second row of nozzles (121) for depositing a second material on the substrate; and a third vapor distribution conduit (130) having a third row of nozzles (131) for depositing a third material on the substrate, and In the idle position, the first row of nozzles, the second row of nozzles, and the third row of nozzles are guided toward the inner shielding surface of the idle shielding member, and At the first deposition position, the first row of nozzles, the second row of nozzles, and the third row of nozzles are aligned with at least one of the first slit and one or more additional slits disposed in the shaper shield (201) to limit the opening angle of the vapor plume ejected by at least one of the first row of nozzles, the second row of nozzles, and the third row of nozzles.

Images