Compound arsenic silicon gallium strontium and arsenic silicon gallium strontium infrared nonlinear optical crystal, preparation method and application

Abstract

The application relates to a compound arsenic-silicon-gallium-strontium and an infrared nonlinear optical crystal of arsenic-silicon-gallium-strontium, a preparation method and application, the compound has a molecular formula of SrGa3Si4As 11 , a molecular weight of 1233.26 g / mol, an asymmetric center, and is crystallized in a hexagonal crystal system P , a 63 space group, a cell parameter of a=b=9.2604(3) A, c=11.6484(5) A, Z=2, and V=865.08(7) A 3 , and is prepared into a crystal by using a high-temperature melt method, a chemical vapor phase transmission method or a flux method. The crystal has strong laser damage resistance, large nonlinear optical effect, wide infrared transmission range, and simultaneously has the advantages of large hardness, good mechanical property, not easy to break and deliquesce, easy to process and store and the like, and can be used for manufacturing infrared nonlinear optical devices.

Description

Technical Field

[0001] This invention belongs to the field of infrared nonlinear optical crystal preparation, specifically relating to a compound, arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 ) and arsenic silicon gallium strontium infrared nonlinear optical crystals, their preparation methods and applications. Background Technology

[0002] Infrared nonlinear optical crystals are key frequency conversion components for achieving mid- and far-infrared laser output, possessing significant strategic application value in fields such as spectral analysis, environmental detection, optoelectronic countermeasures, and advanced communications. In recent years, inorganic phosphorus compounds, exhibiting multifunctional properties including superconductivity, thermoelectricity, catalysis, and nonlinear optics, have received sustained attention. Among them, phosphorus compounds with non-centrosymmetric and polar structures are considered a highly promising direction for the development of high-performance nonlinear optical materials. Phosphorus nonlinear optical materials, represented by ZnGeP2, CdSiP2, and CdGeAs2, have significantly surpassed traditional commercial chalcogenides (such as AgGaS2 and AgGaSe2 crystals) in their nonlinear optical effects. Particularly in the mid-infrared band, optical parametric oscillators based on ZnGeP2 have achieved high-power laser output of 3–5 μm and exceeding 100 W, demonstrating excellent nonlinear optical performance and good mid-infrared transmittance. However, in the mid-to-far infrared (especially wavelengths greater than 10 μm) long-wavelength region, existing commercial materials generally have significant limitations: for example, AgGaS2 / AgGaSe2 has a low laser damage threshold, while ZnGeP2 has a relatively limited infrared transmission range. These shortcomings restrict their application in high-performance mid-to-far infrared laser systems. It is worth noting that among phosphorus compounds, arsenides typically exhibit larger nonlinear optical coefficients and wider infrared transmission ranges than phosphides, theoretically making them more suitable for the development of mid-to-far infrared nonlinear optical devices. However, arsenides still face a series of challenges in practical applications, including narrow band gaps, low thermal conductivity, and difficulties in synergistically optimizing multiple performance parameters. Therefore, how to effectively widen the band gap, improve the laser damage threshold, and optimize birefringence and thermal properties while maintaining a large nonlinear coefficient through material design and synthesis control has become a key scientific problem and technological bottleneck in the development of high-performance arsenide materials. Summary of the Invention

[0003] The purpose of this invention is to provide a compound, arsenic-silicon-gallium-strontium, with the molecular formula SrGa3Si4As. 11 It has a molecular weight of 1233.26 g / mol, possesses an asymmetric center, and crystallizes in the hexagonal crystal system. P Space group 63 was prepared using a high-temperature solid-state reaction method.

[0004] Another objective of this invention is to provide an infrared nonlinear optical crystal of arsenic silicon gallium strontium, with the molecular formula SrGa3Si4As. 11 It has a molecular weight of 1233.26 g / mol, possesses an asymmetric center, and crystallizes in the hexagonal crystal system. P Space group 63, cell parameters: a=b=9.2604(3) Å, c=11.6484(5) Å, Z=2, V=865.08(7) Å 3 .

[0005] Another object of the present invention is to provide arsenic silicon gallium strontium SrGa3Si4As 11 Methods for preparing infrared nonlinear optical crystals.

[0006] Another objective of this invention is to provide arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Applications of infrared nonlinear optical crystals.

[0007] The present invention discloses a compound, arsenic-silicon-gallium-strontium, with the molecular formula SrGa3Si4As. 11 It has a molecular weight of 1233.26 g / mol, possesses an asymmetric center, and crystallizes in the hexagonal crystal system. P Space group 63 was prepared using a high-temperature solid-state reaction method.

[0008] The preparation method of the compound arsenic silicon gallium strontium is carried out by a high-temperature solid-state reaction method, and the specific operation is as follows: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 - 5 Pa is molten and sealed, wherein the Sr source material is elemental Sr, SrCl2 or SrI2; and the Ga source material is elemental Ga, GaAs or GaCl3. b. Place the sealed quartz tube from step a into a temperature-controlled muffle furnace, heat it to 800-900 ℃ at a rate of 18-30 ℃ / h, carry out a solid-phase reaction for 50-80 h, then cool it to 600 ℃ at a rate of 10-22 ℃ / h and turn off the furnace. After it cools naturally to room temperature, take out the sample, crush and grind it to obtain the pure powdered compound arsenic silicon gallium strontium.

[0009] An infrared nonlinear optical crystal of arsenic, silicon, gallium, and strontium, with the molecular formula SrGa3Si4As. 11 It has a molecular weight of 1233.26 g / mol, possesses an asymmetric center, and crystallizes in the hexagonal crystal system.P Space group 63, cell parameters: a=b=9.2604(3) Å, c=11.6484(5) Å, Z=2, V=865.08(7) Å 3 .

[0010] The method for preparing the aforementioned arsenic silicon gallium strontium infrared nonlinear optical crystal involves growing the crystal using a high-temperature melt method, a chemical vapor transport method, or a flux method. The high-temperature melt method for growing arsenic silicon gallium strontium infrared nonlinear optical crystals is carried out according to the following steps: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 - 5 The sample is melted and sealed, then placed in a temperature-controlled muffle furnace and heated to 800-900 °C at a rate of 18-30 °C / h for a solid-state reaction for 50-80 h. It is then cooled to 600 °C at a rate of 10-22 °C / h, the furnace is turned off, and the sample is allowed to cool naturally to room temperature before being removed and crushed to obtain a powdered pure arsenic silicon gallium strontium sample. The Sr source material is elemental Sr, SrCl2, or SrI2; the Ga source material is elemental Ga, GaAs, or GaCl3. b. Load the compound powder obtained in step a into a quartz tube and evacuate it to 10°C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was increased to 850-950 °C at a rate of 15-25 °C / h and held at that temperature for 80-100 h. The temperature was then slowly reduced to 650 °C at a rate of 4-11 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain black, blocky arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Infrared nonlinear optical crystal; The chemical vapor transport method for growing arsenic silicon gallium strontium infrared nonlinear optical crystals is performed according to the following steps: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 - 5The sample is melted and sealed, then placed in a temperature-controlled muffle furnace and heated to 800-900 °C at a rate of 18-30 °C / h for a solid-state reaction for 50-80 h. It is then cooled to 600 °C at a rate of 10-22 °C / h, the furnace is turned off, and the sample is allowed to cool naturally to room temperature before being removed and crushed to obtain a powdered pure arsenic silicon gallium strontium sample. The Sr source material is elemental Sr, SrCl2, or SrI2; the Ga source material is elemental Ga, GaAs, or GaCl3. b. Weigh the compound powder obtained in step a and the transport agent elemental iodine at a ratio of 1:0.05-0.1, mix thoroughly, and place into a quartz tube. Evacuate to 10°C. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport at a high-temperature zone of 650-750 °C and a low-temperature zone of 550-650 °C. Arsenic-silicon gallium-strontium (SrGa3Si4As) crystals were grown using a horizontal or vertical gradient temperature field. The temperature was simultaneously increased to 650-750 °C in the high-temperature zone and 550-650 °C in the low-temperature zone at a rate of 18-32 °C / h, with a growth cycle of 18-30 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 9-15 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, yielding black, blocky SrGa3Si4As crystals at the low-temperature end. 11 Infrared nonlinear optical crystal; The flux-assisted growth of the arsenic silicon gallium strontium infrared nonlinear optical crystal is carried out according to the following steps: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 - 5 The sample is melted and sealed, then placed in a temperature-controlled muffle furnace and heated to 800-900 °C at a rate of 18-30 °C / h for a solid-state reaction for 50-80 h. It is then cooled to 600 °C at a rate of 10-22 °C / h, the furnace is turned off, and the sample is allowed to cool naturally to room temperature before being removed and crushed to obtain a powdered pure arsenic silicon gallium strontium sample. The Sr source material is elemental Sr, SrCl2, or SrI2; the Ga source material is elemental Ga, GaAs, or GaCl3. b. Mix the compound powder obtained in step a with the flux at a mass ratio of 1:1-4, pack the mixture into a quartz tube, and evacuate to 10°C. -3 -10 -5Pa was melted and sealed with an oxyhydrogen flame and placed in a crystal growth furnace. The temperature was increased to 650-750 °C at a rate of 20-30 °C / h, and the reaction was maintained at this temperature for 60-100 h. Then, the temperature was reduced to 500 °C at a rate of 4-11 °C / h, and the tube growth furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black, blocky arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Infrared nonlinear optical crystal; wherein the flux is As, SrCl2, SrI2, GaCl3, etc.

[0011] The aforementioned arsenic-silicon-gallium-strontium infrared nonlinear optical crystal is used in the preparation of infrared band laser frequency conversion crystals, infrared lasers, infrared electro-optic devices, infrared communication devices, or infrared laser guidance devices.

[0012] The present invention describes a compound, arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Prepared according to the following chemical reaction formula: (1) Sr+3Ga+4Si+11As=SrGa3Si4As 11 ; (2) SrCl2+3Ga+4Si+11As=SrGa3Si4As 11 +Cl2; (3) SrI2+3Ga+4Si+11As=SrGa3Si4As 11 +I2; (4) Sr+3GaAs+4Si+8As=SrGa3Si4As 11 ; (5) Sr+3GaCl3+4Si+11As=SrGa3Si4As 11 +4.5Cl2; (6) SrCl2+3GaAs+4Si+8As=SrGa3Si4As 11 +Cl2; (7) SrCl2+3GaCl3+4Si+11As=SrGa3Si4As 11 +5.5Cl2; (8) SrI2+3GaAs+4Si+8As=SrGa3Si4As 11 +I2.

[0013] The methods for preparing SrGa3Si4As nonlinear optical crystals described in this invention can all yield SrGa3Si4As crystals with centimeter-scale dimensions. 11 Infrared nonlinear optical crystals; by using a large-size crucible and extending the growth time, correspondingly larger-sized SrGa3Si4As crystals can be obtained. 11Infrared nonlinear optical crystal.

[0014] The present invention describes an arsenic silicon gallium strontium SrGa3Si4As 11 Infrared nonlinear optical crystals have advantages such as low cost and ease of obtaining large-size crystals; the obtained arsenic silicon gallium strontium SrGa3Si4As 11 Infrared nonlinear optical crystals and devices also have advantages such as strong resistance to laser damage, large nonlinear optical effects, wide transmission band, wide optical bandgap (compared to previously reported arsenides), high hardness, good mechanical properties, resistance to breakage and deliquescence, and ease of processing and storage; these crystals can be used to fabricate infrared nonlinear optical devices.

[0015] Based on the crystallographic data of the crystal, the crystal blank is oriented, and the crystal is cut according to the required angle, thickness and cross-sectional size. The light-transmitting surface of the crystal is polished, and it can then be used as a nonlinear optical device. Attached Figure Description

[0016] Figure 1 The present invention is based on arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Schematic diagram of the structure: In its crystal structure, all Ga and Si atoms are tetrahedral coordinated with As atoms, forming [GaAs4] units and [SiAs4] tetrahedra, respectively; while Sr atoms are nine-coordinated with As atoms, forming [SrAs9] polyhedra. Subsequently, three [GaAs4] tetrahedra are connected by corner sharing to form [Ga3As]. 10 The [SiAs4] trimer exhibits two different orientations (labeled A and C); similarly, four [SiAs4] tetrahedra are interconnected by As atoms sharing corners, forming [Si4As] trimers with two different configurations (labeled B and D). 13 Tetramer. Subsequently, [Ga3As] was obtained. 10 Trimer and [Si4As] 13 The tetramers are then arranged along the c-axis in the order ABCD… to construct [GaSiAs]. ∞ Polymer chains. These chains are further angularly connected to [As–As] bonds in the ab plane via [SiAs4] units, ultimately forming three-dimensional [GaSiAs] polymer chains. ∞ An anionic framework. Finally, [SrAs9] polyhedra fill the remaining channels, balancing the charge of the anionic framework, thus completing the final three-dimensional SrGa3Si4As. 11 Construction of crystal structure (f); Figure 2 The present invention is based on arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Comparison of experimental and theoretical values ​​of X-ray diffraction of polycrystalline powder; Figure 3 The present invention is based on arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 A schematic diagram of the second-order nonlinear optical effect signal of a crystal, SrGa3Si4As, within the particle size range of 180-212 μm. 11 It exhibits a large second-order nonlinear optical coefficient, approximately 1.6 times that of the benchmark ZnGeP2; Figure 4 This is a schematic diagram illustrating the working principle of the optical device of the present invention, where 1 is a laser, 2 is a convex lens, and 3 is SrGa3Si4As after crystal post-processing and optical processing. 11 Infrared nonlinear optical crystal, 4 is a prism, and 5 is a filter. Detailed Implementation

[0017] Any feature disclosed in this invention, unless specifically stated otherwise, may be replaced by other equivalent or similar features. Unless specifically stated otherwise, each feature is merely one example of a series of equivalent or similar features. The descriptions are merely illustrative and should not be construed as limiting the invention.

[0018] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. Example 1

[0019] The chemical reaction is: Sr + 3Ga + 4Si + 11As = SrGa3Si4As 11 The compound SrGa3Si4As was prepared by a high-temperature solid-state reaction method. 11 The specific operation is carried out according to the following steps: 0.355 g of elemental Sr, 0.848 g of elemental Ga, 0.455 g of elemental Si, and 3.341 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 - 5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 900 °C at a rate of 18 °C / h for a solid-state reaction for 65 h. The temperature was then cooled to 600 °C at a rate of 16 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11 Compounds. Example 2

[0020] The chemical reaction is SrCl₂ + 3Ga + 4Si + 11As = SrGa₃Si₄As 11+Cl2, compound SrGa3Si4As was prepared by high-temperature solid-state reaction method. 11 The specific operation is carried out according to the following steps: 0.608 g of SrCl2, 0.802 g of metallic elemental Ga, 0.431 g of elemental Si, and 3.160 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 -5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 880 °C at a rate of 20 °C / h for a solid-state reaction for 55 h. The temperature was then cooled to 600 °C at a rate of 18 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11 Compounds. Example 3

[0021] The chemical reaction is SrI₂ + 3Ga + 4Si + 11As = SrGa₃Si₄As 11 +I2, compound SrGa3Si4As was prepared by high-temperature solid-state reaction method. 11 The specific operation is carried out according to the following steps: 1.148 g of SrI₂, 0.703 g of metallic elemental Ga, 0.378 g of elemental Si, and 2.771 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 -5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 860 °C at a rate of 22 °C / h for a solid-state reaction for 50 h. The temperature was then cooled to 600 °C at a rate of 14 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11 Compounds. Example 4

[0022] The chemical reaction is Sr + 3GaAs + 4Si + 8As = SrGa3Si4As 11 The compound SrGa3Si4As was prepared by a high-temperature solid-state reaction method. 11 The specific operation is carried out according to the following steps: 0.355 g of elemental Sr, 1.759 g of GaAs, 0.455 g of elemental Si, and 2.430 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 -5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 840 °C at a rate of 25 °C / h for a solid-state reaction for 75 h. The temperature was then cooled to 600 °C at a rate of 12 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11 Compounds. Example 5

[0023] The chemical reaction is: Sr + 3GaCl3 + 4Si + 11As = SrGa3Si4As 11 +4.5Cl2, compound SrGa3Si4As was prepared by high-temperature solid-state reaction. 11 The specific operation is carried out according to the following steps: 0.282 g of elemental Sr, 1.701 g of GaCl3, 0.362 g of elemental Si, and 2.654 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 -5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 820 °C at a rate of 27 °C / h for a solid-state reaction for 80 h. The temperature was then cooled to 600 °C at a rate of 22 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11 Compounds. Example 6

[0024] The chemical reaction is SrCl2 + 3GaAs + 4Si + 8As = SrGa3Si4As 11 +Cl2, compound SrGa3Si4As was prepared by high-temperature solid-state reaction method. 11 The specific operation is carried out according to the following steps: 0.608 g of elemental SrCl2, 1.664 g of GaAs, 0.431 g of elemental Si, and 2.298 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 -5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 800 °C at a rate of 30 °C / h for a solid-state reaction for 60 h. The temperature was then cooled to 600 °C at a rate of 15 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11 Compounds. Example 7

[0025] The chemical reaction is: SrCl2 + 3GaCl3 + 4Si + 11As = SrGa3Si4As 11 The compound SrGa3Si4As was prepared by a high-temperature solid-state reaction method using +5.5Cl2. 11 The specific operation is carried out according to the following steps: 0.488 g of elemental SrCl2, 1.627 g of GaCl3, 0.346 g of elemental Si, and 2.539 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 -5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 830 °C at a rate of 21 °C / h for a solid-state reaction for 50 h. The temperature was then cooled to 600 °C at a rate of 20 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11 Compounds. Example 8

[0026] The chemical reaction is SrI₂ + 3GaAs + 4Si + 8As = SrGa₃Si₄As. 11 +I2, compound SrGa3Si4As was prepared by high-temperature solid-state reaction method. 11 The specific operation is carried out according to the following steps: 1.148 g of elemental SrI₂, 1.459 g of GaAs, 0.378 g of elemental Si, and 2.015 g of elemental As were mixed thoroughly and placed into a 25 mm × 240 mm quartz glass tube. The quartz tube was then evacuated to a vacuum level of 10 using a vacuum pump. -3 -10 -5 After Pa, perform melt sealing; The sealed quartz tube was placed in a temperature-controlled muffle furnace and heated to 850 °C at a rate of 24 °C / h for a solid-state reaction for 70 h. The temperature was then cooled to 600 °C at a rate of 10 °C / h, and the furnace was turned off. After natural cooling to room temperature, the sample was removed and crushed into powder, yielding SrGa3Si4As. 11Compounds. Example 9

[0027] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 1 11 The pure powder sample was placed into a 25 mm × 240 mm quartz tube and evacuated to 10°C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was increased to 950 °C at a rate of 15 °C / h and held at that temperature for 85 h. Then, the temperature was slowly reduced to 650 °C at a rate of 5 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ4.8 mm × 3.2 mm. 11 Infrared nonlinear optical crystal. Example 10

[0028] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 2 11 The pure powder sample was placed into a 25 mm × 240 mm quartz glass tube and evacuated to 10 °C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was raised to 930 °C at a rate of 17 °C / h and held at that temperature for 90 h. Then, the temperature was slowly lowered to 650 °C at a rate of 7 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ3.6 mm × 2.4 mm. 11 Infrared nonlinear optical crystal. Example 11

[0029] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 3 11 The pure powder sample was placed into a 25 mm × 240 mm quartz glass tube and evacuated to 10 °C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was increased to 910 °C at a rate of 19 °C / h and held at that temperature for 80 h. Then, the temperature was slowly reduced to 650 °C at a rate of 9 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ4.5 mm × 2.8 mm. 11 Infrared nonlinear optical crystal. Example 12

[0030] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 4 11 The pure powder sample was placed into a 25 mm × 240 mm quartz glass tube and evacuated to 10 °C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was raised to 890 °C at a rate of 21 °C / h and held at that temperature for 95 h. Then, the temperature was slowly lowered to 650 °C at a rate of 11 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ3.0 mm × 1.8 mm. 11 Infrared nonlinear optical crystal. Example 13

[0031] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 5 11 The pure powder sample was placed into a 25 mm × 240 mm quartz glass tube and evacuated to 10 °C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was raised to 870 °C at a rate of 23 °C / h and held at that temperature for 90 h. Then, the temperature was slowly lowered to 650 °C at a rate of 8 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ5.2 mm × 3.9 mm. 11 Infrared nonlinear optical crystal. Example 14

[0032] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 6 11 The pure powder sample was placed into a 25 mm × 240 mm quartz glass tube and evacuated to 10 °C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was raised to 850 °C at a rate of 25 °C / h and held at that temperature for 100 h. Then, the temperature was slowly lowered to 650 °C at a rate of 6 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ6.4 mm × 4.8 mm. 11 Infrared nonlinear optical crystal. Example 15

[0033] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 7 11 The pure powder sample was placed into a 25 mm × 240 mm quartz glass tube and evacuated to 10 °C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was raised to 900 °C at a rate of 18 °C / h and held at that temperature for 80 h. Then, the temperature was slowly lowered to 650 °C at a rate of 10 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ4.0 mm × 3.5 mm. 11 Infrared nonlinear optical crystal. Example 16

[0034] The high-temperature melt growth of SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 8 11 The pure powder sample was placed into a 25 mm × 240 mm quartz glass tube and evacuated to 10 °C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was raised to 880 °C at a rate of 24 °C / h and held at that temperature for 90 h. Then, the temperature was slowly lowered to 650 °C at a rate of 5 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain a black block of SrGa3Si4As with dimensions of Φ5.6 mm × 4.8 mm. 11 Infrared nonlinear optical crystal. Example 17

[0035] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 1 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.05 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport at a high temperature zone of 750 °C and a low temperature zone of 650 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11Crystal growth was performed by simultaneously heating the crystals to 750 °C in the high-temperature region and 650 °C in the low-temperature region at a rate of 18 °C / h for 25 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 12 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As crystals with dimensions of Φ5.5 mm × 4.5 mm were obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 18

[0036] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 2 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.07 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport at a high temperature zone of 730 °C and a low temperature zone of 620 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11 Crystal growth was performed by simultaneously heating the quartz tube to 730 °C in the high-temperature region and 620 °C in the low-temperature region at a rate of 20 °C / h for 27 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 14 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As with dimensions of Φ4.8 mm × 3.8 mm was obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 19

[0037] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 3 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.09 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport in a high-temperature zone of 710 °C and a low-temperature zone of 600 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11Crystal growth was performed by simultaneously heating the quartz tube to 710 °C in the high-temperature region and 600 °C in the low-temperature region at a rate of 24 °C / h for 20 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 10 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As with dimensions of Φ3.6 mm × 3.2 mm was obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 20

[0038] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 4 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.1 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport at a high temperature zone of 700 °C and a low temperature zone of 600 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11 Crystal growth was performed by simultaneously heating the quartz tube to 700 °C in the high-temperature region and 600 °C in the low-temperature region at a rate of 28 °C / h for 26 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 13 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As with dimensions of Φ6.4 mm × 4.5 mm was obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 21

[0039] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 5 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.12 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport in a high-temperature zone of 680 °C and a low-temperature zone of 560 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11Crystal growth was performed by simultaneously heating the quartz tube to 680 °C in the high-temperature region and 560 °C in the low-temperature region at a rate of 30 °C / h for 23 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 9 °C / h before the tube furnace was shut down. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As with dimensions of Φ5.0 mm × 4.2 mm was obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 22

[0040] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 6 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.15 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport in a high-temperature zone of 700 °C and a low-temperature zone of 550 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11 Crystal growth was performed by simultaneously heating the quartz tube to 700 °C in the high-temperature region and 550 °C in the low-temperature region at a rate of 27 °C / h for 30 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 10 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As with dimensions of Φ7.2 mm × 5.6 mm was obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 23

[0041] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 7 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.08 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 100 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport at a high temperature zone of 720 °C and a low temperature zone of 580 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11Crystal growth was performed by simultaneously heating the quartz tube to 720 °C in the high-temperature region and 580 °C in the low-temperature region at a rate of 20 °C / h for 25 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 15 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As with dimensions of Φ6.6 mm × 4.5 mm was obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 24

[0042] SrGa3Si4As grown by chemical vapor transport method 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 8 11 The powdered pure sample and elemental iodine were weighed at a ratio of 1:0.06 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 mm. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport at a high temperature zone of 750 °C and a low temperature zone of 560 °C, and SrGa3Si4As was grown through a horizontal gradient temperature field. 11 Crystal growth was performed by simultaneously heating the quartz tube to 750 °C in the high-temperature region and 560 °C in the low-temperature region at a rate of 22 °C / h for 29 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 11 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, and black blocky SrGa3Si4As with dimensions of Φ7.0 mm × 6.5 mm was obtained at the low-temperature end. 11 Infrared nonlinear optical crystal. Example 25

[0043] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 1 were mixed at a mass ratio of 1:1. 11 The pure powder sample was thoroughly mixed with elemental As flux and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 °C. -3 -10 -5 Pa was melted and sealed using an oxyhydrogen flame and then placed in a crystal growth furnace. The temperature was increased to 750 °C at a rate of 23 °C / h and held at that temperature for 80 h. The temperature was then reduced to 500 °C at a rate of 6 °C / h, and the furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ4.2 mm × 3.6 mm. 11 Infrared nonlinear optical crystal. Example 26

[0044] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 2 was mixed at a mass ratio of 1:2. 11 The pure powder sample was thoroughly mixed with elemental As flux and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 °C. -3 -10 -5 Pa was melted and sealed using an oxyhydrogen flame and then placed in a crystal growth furnace. The temperature was increased to 720 °C at a rate of 26 °C / h and held at that temperature for 70 h. The temperature was then reduced to 500 °C at a rate of 8 °C / h, and the furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ3.3 mm × 2.6 mm. 11 Infrared nonlinear optical crystal. Example 27

[0045] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 3 was mixed at a mass ratio of 1:3. 11 The pure powder sample was thoroughly mixed with elemental As flux and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 °C. -3 -10 -5 Pa was melted and sealed using an oxyhydrogen flame and then placed in a crystal growth furnace. The temperature was increased to 700 °C at a rate of 28 °C / h and held at that temperature for 85 h. The temperature was then reduced to 500 °C at a rate of 10 °C / h, and the furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ4.0 mm × 3.6 mm. 11 Infrared nonlinear optical crystal. Example 28

[0046] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 4 was mixed at a mass ratio of 1:4. 11 The pure powder sample was thoroughly mixed with elemental As flux and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 10 °C. -3 -10 -5Pa was melted and sealed using an oxyhydrogen flame and then placed in a crystal growth furnace. The temperature was increased to 670 °C at a rate of 28 °C / h and held at that temperature for 90 h. The temperature was then reduced to 500 °C at a rate of 5 °C / h, and the furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ5.8 mm × 4.4 mm. 11 Infrared nonlinear optical crystal. Example 29

[0047] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 5 was mixed at a mass ratio of 1:1. 11 The powder sample was thoroughly mixed with the flux SrI2 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 100 mm. -3 -10 -5 Pa was melted and sealed with an oxyhydrogen flame and placed in a crystal growth furnace. The temperature was increased to 730 °C at a rate of 20 °C / h and held at that temperature for 100 h. Then, the temperature was reduced to 500 °C at a rate of 7 °C / h and the tube growth furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ6.4 mm × 4.8 mm. 11 Infrared nonlinear optical crystal. Example 30

[0048] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 6 was mixed at a mass ratio of 1:3. 11 The powder sample was thoroughly mixed with the flux SrI2 and placed into a 25 mm × 240 mm quartz tube. A vacuum was then applied to a depth of 100 mm. -3 -10 -5 Pa was melted and sealed with an oxyhydrogen flame and placed in a crystal growth furnace. The temperature was increased to 700 °C at a rate of 25 °C / h and held at that temperature for 90 h. Then, the temperature was reduced to 500 °C at a rate of 9 °C / h, and the tube growth furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ5.2 mm × 3.5 mm. 11 Infrared nonlinear optical crystal. Example 31

[0049] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 7 was mixed at a mass ratio of 1:2. 11 The powder sample was thoroughly mixed with the flux GaCl3 and placed into a 25 mm × 240 mm quartz tube. The tube was then evacuated to 10 °C. -3 -10 -5 Pa was melted and sealed using an oxyhydrogen flame and then placed in a crystal growth furnace. The temperature was increased to 740 °C at a rate of 23 °C / h and held at that temperature for 80 h. The temperature was then reduced to 500 °C at a rate of 4 °C / h, and the tube growth furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ6.6 mm × 4.8 mm. 11 Infrared nonlinear optical crystal. Example 32

[0050] The flux growth method is used to prepare SrGa3Si4As 11 The infrared nonlinear optical crystal is operated according to the following steps: The SrGa3Si4As obtained in Example 8 was mixed at a mass ratio of 1:4. 11 The powder sample was thoroughly mixed with the flux GaCl3 and placed into a 25 mm × 240 mm quartz tube. The tube was then evacuated to 10 °C. -3 -10 -5 Pa was melted and sealed using an oxyhydrogen flame and then placed in a crystal growth furnace. The temperature was increased to 690 °C at a rate of 27 °C / h and held at that temperature for 70 h. The temperature was then reduced to 500 °C at a rate of 11 °C / h, and the furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black blocky SrGa3Si4As with dimensions of Φ4.5 mm × 3.0 mm. 11 Infrared nonlinear optical crystal. Example 33

[0051] Any of the SrGa3Si4As obtained in Examples 9-32 11 Infrared nonlinear optical crystal, placed Figure 4 The device shown is located at position 3. At room temperature, using a Q-switched Ho:Tm:Cr:YAG laser as the light source, with infrared light of 2090 nm incident on the light source, the output wavelength is 1045 nm frequency-doubled light. Under the same conditions, the output laser intensity is 1.6 times that of commercial material ZnGeP2. Example 34

[0052] Any of the SrGa3Si4As obtained in Examples 9-32 11 Infrared nonlinear optical crystals, according to Figure 4As shown, it is positioned at 3, where 1 is the laser, 2 is the convex lens, and 3 is SrGa3Si4As. 11 Infrared nonlinear optical crystal, 4 is a prism, 5 is a filter; the laser beam emitted by laser 1 passes through convex lens 2 and enters SrGa3Si4As. 11 The laser beam generated by crystal 3 passes through prism 4 and filter 5 to obtain the desired laser beam.

[0053] Using the SrGa3Si4As of the present invention 11 Devices made from infrared nonlinear optical crystals can be frequency multipliers, up-to-down frequency converters, optical parametric oscillators, and optical parametric amplifiers.

Claims

1. A compound, arsenic-silicon-gallium-strontium, characterized in that... The molecular formula of this compound is SrGa3Si4As. 11 It has a molecular weight of 1233.26 g / mol, possesses an asymmetric center, and crystallizes in the hexagonal crystal system. P Space group 63 was prepared using a high-temperature solid-state reaction method.

2. The method for preparing the compound arsenic-silicon-gallium-strontium according to claim 1, characterized in that... The high-temperature solid-state reaction method is adopted, and the specific operation is carried out according to the following steps: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 -5 Pa is molten and sealed, wherein the Sr source material is elemental Sr, SrCl2 or SrI2; and the Ga source material is elemental Ga, GaAs or GaCl3. b. Place the sealed quartz tube from step a into a temperature-controlled muffle furnace, heat it to 800-900 ℃ at a rate of 18-30 ℃ / h, carry out a solid-phase reaction for 50-80 h, then cool it to 600 ℃ at a rate of 10-22 ℃ / h and turn off the furnace. After it cools naturally to room temperature, take out the sample, crush and grind it to obtain the pure powdered compound arsenic silicon gallium strontium.

3. An arsenic-silicon-gallium-strontium infrared nonlinear optical crystal, characterized in that, The molecular formula of this crystal is SrGa3Si4As. 11 It has a molecular weight of 1233.26 g / mol, possesses an asymmetric center, and crystallizes in the hexagonal crystal system. P Space group 63, cell parameters: a=b=9.2604(3) Å, c=11.6484(5) Å, Z=2, V=865.08(7) Å 3 .

4. The method for preparing the arsenic-silicon-gallium-strontium infrared nonlinear optical crystal according to claim 3, characterized in that... Crystals are grown using the high-temperature melt method, chemical vapor transport method, or flux method. The high-temperature melt method for growing arsenic silicon gallium strontium infrared nonlinear optical crystals is carried out according to the following steps: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 -5 The sample is melted and sealed, then placed in a temperature-controlled muffle furnace and heated to 800-900 °C at a rate of 18-30 °C / h for a solid-state reaction for 50-80 h. It is then cooled to 600 °C at a rate of 10-22 °C / h, the furnace is turned off, and the sample is allowed to cool naturally to room temperature before being removed and crushed to obtain a powdered pure arsenic silicon gallium strontium sample. The Sr source material is elemental Sr, SrCl2, or SrI2; the Ga source material is elemental Ga, GaAs, or GaCl3. b. Load the compound powder obtained in step a into a quartz tube and evacuate it to 10°C. -3 Pa was encapsulated in an oxyhydrogen flame and placed in a muffle furnace. The temperature was increased to 850-950 °C at a rate of 15-25 °C / h and held at that temperature for 80-100 h. The temperature was then slowly reduced to 650 °C at a rate of 4-11 °C / h, and the furnace was turned off. After natural cooling to room temperature, the quartz tube was cut open to obtain black, blocky arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Infrared nonlinear optical crystal; The chemical vapor transport method for growing arsenic silicon gallium strontium infrared nonlinear optical crystals is performed according to the following steps: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 -5 The sample is melted and sealed, then placed in a temperature-controlled muffle furnace and heated to 800-900 °C at a rate of 18-30 °C / h for a solid-state reaction for 50-80 h. It is then cooled to 600 °C at a rate of 10-22 °C / h, the furnace is turned off, and the sample is allowed to cool naturally to room temperature before being removed and crushed to obtain a powdered pure arsenic silicon gallium strontium sample. The Sr source material is elemental Sr, SrCl2, or SrI2; the Ga source material is elemental Ga, GaAs, or GaCl3. b. Weigh the compound powder obtained in step a and the transport agent iodine at a ratio of 1:0.05-0.1, mix thoroughly, and place into a quartz tube. Evacuate to 10°C. -3 Pa, encapsulated in an oxyhydrogen flame, was placed in a tube furnace for chemical vapor transport at a high-temperature zone of 650-750 °C and a low-temperature zone of 550-650 °C. Arsenic-silicon gallium-strontium (SrGa3Si4As) crystals were grown using a horizontal or vertical gradient temperature field. The temperature was simultaneously increased to 650-750 °C in the high-temperature zone and 550-650 °C in the low-temperature zone at a rate of 18-32 °C / h, with a growth cycle of 18-30 days. After growth, the temperature was slowly reduced to 450 °C at a rate of 9-15 °C / h, and the tube furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open, yielding black, blocky SrGa3Si4As crystals at the low-temperature end. 11 Infrared nonlinear optical crystal; The flux-assisted growth of the arsenic silicon gallium strontium infrared nonlinear optical crystal is carried out according to the following steps: a. Using a molar ratio of Sr∶Ga∶Si∶As=1∶3∶4∶11, mix the Sr source material, Ga source material, elemental Si, and elemental As evenly, and place the mixture into a Φ25 mm × 240 mm quartz glass tube. Use a vacuum pump to evacuate the quartz tube to a vacuum degree of 10. -3 -10 -5 The sample is melted and sealed, then placed in a temperature-controlled muffle furnace and heated to 800-900 °C at a rate of 18-30 °C / h for a solid-state reaction for 50-80 h. It is then cooled to 600 °C at a rate of 10-22 °C / h, the furnace is turned off, and the sample is allowed to cool naturally to room temperature before being removed and crushed to obtain a powdered pure arsenic silicon gallium strontium sample. The Sr source material is elemental Sr, SrCl2, or SrI2; the Ga source material is elemental Ga, GaAs, or GaCl3. b. Mix the compound powder obtained in step a with fluxes As, SrCl2, SrI2, and GaCl3 at a mass ratio of 1:1-4 until homogeneous. Place the mixture into a quartz tube and evacuate to 10°C. -3 -10 -5 Pa was melted and sealed with an oxyhydrogen flame and placed in a crystal growth furnace. The temperature was increased to 650-750 °C at a rate of 20-30 °C / h, and the reaction was maintained at this temperature for 60-100 h. Then, the temperature was reduced to 500 °C at a rate of 4-11 °C / h, and the tube growth furnace was shut off. After natural cooling to room temperature, the quartz tube was cut open to obtain black, blocky arsenic-silicon-gallium-strontium (SrGa3Si4As). 11 Infrared nonlinear optical crystal.

5. The arsenic silicon gallium strontium infrared nonlinear optical crystal as described in claim 3 is useful in the preparation of infrared band laser frequency conversion crystals, infrared lasers, infrared electro-optic devices, infrared communication devices, or infrared laser guidance devices.

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