Method for preparing high purity pgmea and method for preparing ultra-clean high purity pgmea
By optimizing the preparation process of PGMEA through steps such as dehydration, removal of light and heavy components, and flash evaporation, the problems of long process flow and outdated product indicators in the existing technology have been solved, and high-purity, low-acid-value PGMEA has been prepared to meet the needs of high-end photoresists.
CN122102907APending Publication Date: 2026-05-29CHINA PETROLEUM & CHEMICAL CORP +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHINA PETROLEUM & CHEMICAL CORP
- Filing Date
- 2024-11-28
- Publication Date
- 2026-05-29
AI Technical Summary
Technical Problem
Existing technologies have long process flows and outdated product specifications, making it impossible to produce PGMEA products that meet the requirements of high-end photoresists.
Method used
The crude PGMEA product is treated by dehydration, light component removal, heavy component removal, and flash evaporation, combined with deionization and demicronization treatments to optimize the process flow and reduce impurity content and acid value.
Benefits of technology
The prepared high-purity PGMEA product has high purity and low acid value, which can meet the requirements of semiconductor-grade photoresist, reduce the amount of ion exchange resin used, and save costs.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122102907A_ABST
Abstract
The present application relates to the field of high-purity chemical preparation, and discloses a method for preparing high-purity PGMEA and a method for preparing ultra-clean high-purity PGMEA. The method for preparing high-purity PGMEA comprises: (1) sequentially performing dehydration treatment and light component removal treatment on PGMEA crude product to obtain light components and a product after light component removal treatment; (2) performing heavy component removal treatment on the product after light component removal treatment in a heavy component removal tower, and leading a side line product out from a side line of the heavy component removal tower; and (3) performing flash evaporation on the side line product. The high-purity PGMEA product prepared by using the method for preparing high-purity PGMEA has high purity, low water content, low acid value, low ions and low particulate matter, and can meet the use requirements of a preparation solvent of a semiconductor-grade photoresist. The ultra-clean high-purity PGMEA prepared by using the method for preparing ultra-clean high-purity PGMEA can further reduce impurity content, and meet the requirements of subsequent high-end products.
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