Anodization process for semiconductor components

CN122105572APending Publication Date: 2026-05-29HANGLING MICRO (TAIZHOU) TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HANGLING MICRO (TAIZHOU) TECH CO LTD
Filing Date
2026-03-31
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Traditional sulfuric acid/oxalic acid anodic oxide films have micropores and microcracks, low density, and cannot effectively block the penetration of corrosive gases. In addition, the use of harmful chemicals affects the stability and service life of semiconductor components.

Method used

Anodizing electrolyte was modified with composite mesoporous silica and fluorine-modified silica sol. A dense oxide layer was formed by introducing composite mesoporous silica and fluorine-modified silica sol with high specific surface area into the oxide film. The antibacterial properties were improved by grafting aminated mesoporous silica and thiol chitosan.

Benefits of technology

It significantly enhances the density and antibacterial properties of the oxide film, reduces the permeability of corrosive media, extends the service life of semiconductor components, imparts self-cleaning properties, and improves stability under complex operating conditions.

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Abstract

The application relates to the technical field of anodic oxidation, in particular to an anodic oxidation process for semiconductor components. The application comprises the following steps: S1, sequentially performing oil removal, alkali etching and acid pickling on the semiconductor components to obtain pretreated semiconductor components; S2, placing the pretreated semiconductor components in an anodic oxidation electrolyte to perform anodic oxidation, and obtaining the semiconductor components after anodic oxidation; the composition of the anodic oxidation electrolyte is as follows: 0.5-0.6g of sulfuric acid, 0.7-0.9g of tartaric acid, 5-6g of ethylenediaminetetraacetic acid disodium, 0.10-0.15g of composite mesoporous silica and 1.0-1.2g of fluorine-modified silica sol in 100ml of deionized water as a solvent. The multi-component synergistic modification makes the oxidation film have high corrosion resistance, antibacterial property, hydrophobicity and structural stability at the same time, and significantly prolongs the service life of the semiconductor components.
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