A shielding device, electroplating equipment and shielding method
By setting up a shielding device in the electroplating equipment to adjust the electric field intensity at the wafer edge, the problem of uneven electroplating on the wafer surface was solved, and the uniformity of the electric field distribution in the wafer edge and center region was achieved, thus improving the electroplating uniformity.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU WUXI JINGWEI TIANDI SEMICONDUCTOR TECHNOLOGY CO LTD
- Filing Date
- 2026-03-26
- Publication Date
- 2026-05-29
AI Technical Summary
In existing electroplating equipment, there is a problem of uneven electroplating on the wafer surface, especially the electric field line density in the wafer edge area is greater than that in the center area, which leads to uneven deposition thickness, and the positioning marks affect the uniformity of the electric field.
A shielding device is installed in the electroplating equipment, including a shielding ring and a shielding unit. The shielding ring is parallel to the wafer and the anode, and the shielding unit contains multiple shielding elements. The movement of the shielding elements is controlled by a marker drive to form an edge electric field shielding or penetration area to adjust the edge electric field intensity of the wafer.
It improves the uniformity of electroplating on the wafer surface, adapts to different wafer markings, enhances or weakens the electric field intensity in the edge area, and improves the overall electroplating uniformity of the wafer.
Smart Images
Figure CN122105580A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of electroplating equipment technology, and in particular to a shielding device, electroplating equipment, and shielding method. Background Technology
[0002] In wafer electroplating, an anode is placed beneath the electroplating chamber. The anode can be of various metals, such as a copper anode or a particulate anode mounted on an anode substrate. A fixture carries the wafer, immersing the side to be electroplated in the electroplating solution. After the electroplating chamber is connected to an external power source, an electric field is generated between the anode and the cathode (typically the wafer as the cathode). At this point, both the anode and cathode (the side of the wafer to be electroplated) are immersed in the electroplating solution. Under the influence of the electric field, metal cations in the electroplating solution move to the cathode and are reduced to metal atoms, which are then uniformly deposited on the wafer surface. In existing electroplating equipment, the surface area of the anode is larger than that of the cathode (wafer), resulting in a higher electric field linear density at the wafer edge than at the wafer center. This leads to a greater deposition thickness at the wafer edge than at the wafer center, resulting in uneven electroplating deposition on the wafer surface. In addition, wafers are usually equipped with positioning structures, such as flat edges, notches, positioning grooves or alignment marks. Positioning marks on wafers can disrupt the uniformity of the electric field. The electroplating rate is faster in the area near the positioning marks, which leads to abnormal thickening of the deposit in that area and the surrounding area, affecting the overall electroplating uniformity of the wafer. Summary of the Invention
[0003] The purpose of this invention is to provide a shielding device, electroplating equipment, and shielding method to improve the uniformity of electroplating on the wafer surface.
[0004] To achieve this objective, the present invention adopts the following technical solution: A shielding device is disposed between a wafer and an anode in an electroplating apparatus, wherein the wafer is provided with a plurality of marks, and the shielding device comprises: A shielding ring is disposed parallel to the wafer and the anode, with the center of the shielding ring corresponding to the center of the wafer, and the orthographic projection of the shielding ring on the wafer coincides with the edge region of the wafer; The shielding unit, disposed on the shielding ring, includes multiple shielding components. After the multiple shielding components are freely moved and combined based on the marks on the wafer, they can form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity in the corresponding region of the wafer edge, or form an edge electric field penetrating region to enhance the electric field intensity in the corresponding region of the wafer edge.
[0005] In some embodiments, the shielding unit further includes a plurality of driving members connected to the plurality of shielding members, wherein the plurality of driving members drive the plurality of shielding members to move in a plane perpendicular to the center line of the shielding ring, and the plurality of shielding members move independently; according to the number and position of the marks, the driving members drive the shielding members to move to a preset position, such that the orthographic projection of the plurality of shielding members on the wafer coincides with the plurality of marked areas to form an edge electric field shielding region, or the shielding members move from the inside to the outside based on the shielding ring to form an edge electric field penetration region.
[0006] In some embodiments, the drive includes a motor, a lead screw, and a lead screw nut that cooperates with the lead screw, the motor driving the lead screw to rotate, and the blocking member connected to the lead screw nut.
[0007] In some embodiments, the markings are divided into occlusion markings and non-occlusion markings. The occlusion markings are used to indicate that the corresponding occlusion element forms an edge electric field occlusion region based on the occlusion markings, and the non-occlusion markings are used to indicate that the corresponding occlusion element forms an edge electric field penetration region based on the non-occlusion markings.
[0008] In some embodiments, the shielding ring is provided with a plurality of guide portions, and the plurality of shielding members are slidably connected to the plurality of guide portions in a one-to-one correspondence.
[0009] In some embodiments, the shielding ring is provided with a limiting portion, and when the shielding member moves to the extreme position inside the shielding ring, the shielding member is limited to the limiting portion.
[0010] In some embodiments, the plurality of shielding members are disposed on the same plane; or, adjacent shielding members are disposed on two planes that are parallel and spaced apart.
[0011] In some embodiments, the blocking unit is provided in multiple groups, and the multiple groups of blocking units are arranged around the blocking ring. The moving directions of multiple blocking members in the blocking unit in the same group are parallel to each other and all move along a diameter direction of the blocking ring; the moving directions of the blocking members in adjacent blocking units are set at an angle.
[0012] In some embodiments, the shielding ring has a first diameter and a second diameter that are perpendicular to each other; the shielding unit is provided in four groups, with the first shielding unit and the second shielding unit disposed on both sides of the shielding ring along the first diameter direction, and the shielding member of the first shielding unit and the shielding member of the second shielding unit both moving along the first diameter direction; the third shielding unit and the fourth shielding unit are disposed on both sides of the shielding ring along the second diameter direction, and the shielding member of the third shielding unit and the shielding member of the fourth shielding unit both moving along the second diameter direction.
[0013] In some embodiments, a plurality of the blocking members in the blocking unit are arranged in a ring around the blocking ring, and the plurality of the blocking members move accordingly along a plurality of diametrical directions of the blocking ring.
[0014] In some embodiments, the wall thickness of the shielding ring is less than the width of the edge region of the wafer, and at least a portion of the remaining shielding member moves such that the orthographic projection of the shielding member on the wafer coincides with the edge region of the wafer, thereby shielding the edge region of the wafer.
[0015] An electroplating apparatus includes at least an electroplating chamber and a clamp disposed on the upper part of the electroplating chamber. The clamp is used to carry a wafer into the electroplating chamber to perform an electroplating process. An anode is disposed inside the electroplating chamber and a shielding device is located above the anode. The shielding device is as described in any of the preceding claims and is capable of forming an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity in the corresponding region of the wafer edge, or forming an edge electric field penetrating region to enhance the electric field intensity in the corresponding region of the wafer edge.
[0016] A masking method employing a masking device as described in any of the preceding claims, wherein the wafer is provided with a plurality of marks, the masking method comprising: Based on the markers, multiple occluders are grouped to form a first group, the first group including a plurality of the occluders; The shielding elements of the first group move and combine to form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity in the corresponding region of the wafer edge, or to form an edge electric field penetration region to enhance the electric field intensity in the corresponding region of the wafer edge.
[0017] In some embodiments, the markings are divided into blocking markings and non-blocking markings. The blocking markings are used to indicate that the corresponding blocking element forms an edge electric field blocking region based on the blocking markings, and the non-blocking markings are used to indicate that the corresponding blocking element forms an edge electric field penetrating region based on the non-blocking markings. The blocking method further includes: Based on the occlusion marker and the non-occlusion marker, the first group is divided into a first branch group and a second branch group; Based on the shielding mark, the shielding members of the first branch group move and combine to form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity of the corresponding region at the edge of the wafer. Based on the unobstructed mark, the obstructing members of the second branch group move and combine to form an edge electric field penetration region between the wafer and the anode to enhance the electric field strength of the corresponding region at the wafer edge.
[0018] In some embodiments, the wall thickness of the shielding ring is less than the width of the edge region of the wafer, and the shielding method further includes: Divide the remaining blocking components (excluding the first group) into the second and third groups; The second group of shielding members moves and combines so that their orthographic projection on the wafer coincides with the edge region of the wafer, thereby shielding the edge region of the wafer; The third group of blocking members moves; inside the blocking ring, the extension length of the third group of blocking members is less than the extension length of the second group of blocking members, which is less than the extension length of the first group of blocking members; the third group of blocking members is assembled to form a groove that is recessed from the inside to the outside of the blocking ring.
[0019] The beneficial effects of this invention are: This invention provides a shielding device, electroplating equipment, and shielding method. During the electroplating process, a wafer serves as the cathode. A shielding device is positioned between the wafer and the anode. A shielding ring is parallel to the wafer and the anode, with its center corresponding to the center of the wafer. The orthographic projection of the shielding ring onto the wafer coincides with the edge region of the wafer, thus shielding the edge region of the wafer. This shields the electric field generated by the anode, reducing the electric field line density in the edge region and preventing it from exceeding that in the center region. This improves the uniformity of the electric field distribution between the center and edge regions, enhancing electroplating uniformity. A shielding unit, located on the shielding ring, includes multiple shielding components. These components are freely combined based on markings on the wafer, and their orthographic projection onto the wafer presents a contour shape corresponding to the markings, thereby forming an edge electric field shielding region and an edge electric field penetration region located between the wafer and the anode. The edge electric field blocking region is used to weaken the electric field intensity in the corresponding area of the wafer edge, while the edge electric field penetrating region is used to enhance the electric field intensity in the corresponding area of the wafer edge. This allows for the corresponding weakening or enhancement of the electric field intensity in the marking area as needed, improving the uniformity of the electric field distribution between the marking area and other areas, thus improving electroplating uniformity and ultimately enhancing the overall electroplating uniformity of the wafer. Because multiple blocking components are adaptively combined based on the markings on the wafer, they can adapt to different wafer markings and form both edge electric field blocking regions to weaken the electric field intensity in the corresponding area of the wafer edge and edge electric field penetrating regions to enhance the electric field intensity in the corresponding area of the wafer edge, offering good adaptability and flexibility. Attached Figure Description
[0020] Figure 1 This is a schematic diagram of a shielding device provided in a specific embodiment of the present invention; Figure 2 This is a schematic diagram of a shielding device in operation according to a specific embodiment of the present invention; Figure 3 This is a schematic diagram of another shielding device provided in a specific embodiment of the present invention; Figure 4 This is a partial side view of another shielding device provided in a specific embodiment of the present invention; Figure 5 This is a top view of a shielding component in another shielding device provided in a specific embodiment of the present invention; Figure 6 This is a schematic diagram of another shielding device in operation according to a specific embodiment of the present invention; Figure 7 This is a flowchart of the occlusion method provided in a specific embodiment of the present invention.
[0021] In the picture: 1. Shielding ring; 11. Guide part; 12. Limiting part; 121. Retaining wall; 2. Blocking unit; 21. Blocking component; 211. Limiting platform; X, the direction of the first diameter; Y, the direction of the second diameter. Detailed Implementation
[0022] To make the technical problems solved by the present invention, the technical solutions adopted, and the technical effects achieved clearer, the technical solutions of the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0023] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0024] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0025] like Figures 1-6 As shown, this embodiment provides a shielding device disposed between the wafer and the anode of an electroplating equipment. The wafer has several marks. The shielding device includes a shielding ring 1 and a shielding unit 2. The shielding ring 1 is disposed parallel between the wafer and the anode, and the center of the shielding ring 1 corresponds to the center of the wafer. The orthogonal projection of the shielding ring 1 on the wafer coincides with the edge region of the wafer. The shielding unit 2 is disposed on the shielding ring 1 and includes multiple shielding elements 21. After the multiple shielding elements 21 are freely moved and combined based on the marks on the wafer, they can form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity of the corresponding region of the wafer edge, or form an edge electric field penetration region to enhance the electric field intensity of the corresponding region of the wafer edge.
[0026] During the electroplating process, a uniform metal film, such as a copper layer, needs to be deposited on one side of the wafer to be electroplated. During the deposition process, the wafer is usually connected to an external power source as a cathode to reduce the metal cations and deposit various metal layers on the surface of the wafer to be electroplated. The wafer serves as the cathode, and a shielding device is installed between the wafer and the anode. A shielding ring 1 is parallel to the anode, with its center corresponding to the center of the wafer. The orthographic projection of the shielding ring 1 onto the wafer coincides with the edge region of the wafer, thus shielding the edge region of the wafer. This shields the electric field generated by the anode, reducing the electric field line density in the edge region and preventing it from exceeding that in the center region. This improves the uniformity of the electric field distribution between the center and edge regions, enhancing electroplating uniformity. A shielding unit 2 is mounted on the shielding ring 1 and includes multiple shielding elements 21. These elements are freely combined based on markings on the wafer, and their orthographic projections on the wafer present a contour shape corresponding to the markings, thereby forming an edge electric field shielding region and an edge electric field penetration region located between the wafer and the anode. The edge electric field blocking region is used to weaken the electric field intensity in the corresponding area of the wafer edge, while the edge electric field penetrating region is used to enhance the electric field intensity in the corresponding area of the wafer edge. This allows for the corresponding weakening or enhancement of the electric field intensity in the marking area as needed, improving the uniformity of the electric field distribution between the marking area and other areas, thus improving the electroplating uniformity and ultimately enhancing the overall electroplating uniformity of the wafer. Since multiple blocking components 21 are adaptively combined based on the markings on the wafer, they can adapt to different wafer markings and form both edge electric field blocking regions for weakening the electric field intensity in the corresponding area of the wafer edge and edge electric field penetrating regions for enhancing the electric field intensity in the corresponding area of the wafer edge. This provides good adaptability and flexibility.
[0027] Optionally, the markings are divided into obscuring markings and non-obscuring markings. In this embodiment, the markings are used to indicate the magnitude of the electric field intensity at a certain location or edge region within the wafer edge. Specifically, the wafer edge region can be divided into multiple continuous wafer edge regions, and a marking can be set for each wafer edge region. This marking can be a pre-defined virtual marking, which is identified by the PLC program to determine whether the electric field under the corresponding marking should be weakened or strengthened. When strengthened, a corresponding edge electric field penetration region is formed; when weakened, a corresponding edge electric field obscuring region is formed.
[0028] The blocking mark is used to indicate that the corresponding blocking member 21 forms an edge electric field blocking area based on the blocking mark, and the non-blocking mark is used to indicate that the corresponding blocking member 21 forms an edge electric field penetrating area based on the non-blocking mark. When the mark is a shielding mark, the shielding member 21 forms an edge electric field shielding region: based on the location and size of the shielding mark, several shielding members 21 are selected at positions corresponding to the shielding mark. These shielding members 21 move towards the central region; the displacements of different shielding members 21 can be the same or different, thus forming a contour shape that matches the shielding mark. The orthographic projection of these shielding members 21 on the wafer coincides with the shielding mark, thereby enabling them to shield the shielding mark, i.e., weaken the electric field generated by the anode. When the shielding mark passes through the edge electric field shielding region, the wafer rotation speed is reduced, so that the rotation speed of the wafer's shielding mark when shielded by the edge electric field shielding region is less than the rotation speed when the shielding mark is not shielded by the edge electric field shielding region. This increases the shielding time of the shielding mark, reduces the effective electroplating time of the marked area, and reduces the deposition thickness of the shielding mark area; for example... Figure 2 As shown, all the remaining shielding elements 21, except for the two shielding elements 21 on the right (located in the right column of shielding elements, the second and third shielding elements), move towards the central region, so that the orthographic projection of the combination of all the remaining shielding elements 21 on the wafer coincides with the shielding mark; as Figure 6 As shown, all the remaining shielding elements 21 except for the two shielding elements 21 on the left (the two shielding elements indicated by the arrows) move towards the central region, so that the orthographic projection of the combination of all the remaining shielding elements 21 on the wafer coincides with the shielding mark.
[0029] When the mark is an unmasked mark, the shielding element 21 forms an edge electric field penetration region: based on the location and size of the unmasked mark, several shielding elements 21 are selected at positions corresponding to the unmasked mark. These shielding elements 21 move outwards from the central region. The displacements of different shielding elements 21 can be the same or different, thus forming a contour shape that matches the unmasked mark. The orthogonal projection of these shielding elements 21 on the wafer precisely avoids the unmasked mark, thereby preventing the shielding elements 21 from obstructing the unmasked mark, i.e., enhancing the electric field generated from the anode. When the unmasked mark passes through the edge electric field penetration region, it can be electroplated; such as Figure 2 As shown, the two shielding elements 21 on the right move outward from the central region, thereby forming an orthogonal projection on the wafer that avoids the non-shielded mark; as Figure 6As shown, the two shielding elements 21 on the left move outward from the central region, thereby forming an orthogonal projection on the wafer that avoids the unshielded mark. Furthermore, when the unshielded mark passes through the edge electric field penetration region, since the electric field from the anode to the cathode is not blocked, the intensity of the electric field is enhanced and unchanged relative to the shielding region, resulting in an increase in the deposition thickness of the marking region of the unshielded mark and improving the electroplating uniformity of the wafer shielding mark, the unshielded mark and other areas.
[0030] Alternatively, the shading unit 2 may be provided with only one set of shading units 2, with multiple shading elements 21 in the shading unit 2 arranged on a part of the shading ring 1, resulting in a simple structure.
[0031] Optionally, the masking elements 21 are arranged around the masking ring 1. By increasing the number of masking elements 21, the contour shape formed by the combination and arrangement of the masking elements 21 can be more refined, continuous and smooth, and more complex and diverse contour shapes can be achieved, improving the fitting accuracy and adaptability of the contour, and providing better versatility and flexibility.
[0032] like Figure 1 and Figure 2 As shown, the blocking unit 2 is provided in multiple groups, which are arranged around the blocking ring 1. The moving directions of multiple blocking components 21 in the same blocking unit 2 are parallel to each other and all move along a diameter direction of the blocking ring 1; the moving directions of the blocking components 21 in adjacent blocking units 2 are set at an angle. By dividing the blocking components 21 into multiple blocking units 2, and adopting the structure in which multiple blocking components 21 in the same blocking unit 2 slide independently and parallelly on the ring along the same diameter direction, each blocking component 21 can achieve independent telescopic movement without interference, and can form a continuously variable linear arrangement profile; the moving direction of each blocking component 21 is uniform, the overall force is symmetrical and balanced, assembly and control are convenient, and the operation is stable and reliable, which is conducive to improving motion accuracy and working stability.
[0033] In one embodiment, the shielding ring 1 has a first diameter and a second diameter that are perpendicular to each other; the shielding units 2 are provided in four groups, with the first shielding unit 2 and the second shielding unit 2 located on both sides of the shielding ring 1 along the first diameter direction X, and the shielding members 21 of the first shielding unit 2 and the second shielding unit 2 both moving along the first diameter direction X; the third shielding unit 2 and the fourth shielding unit 2 are located on both sides of the shielding ring 1 along the second diameter direction Y, and the shielding members 21 of the third shielding unit 2 and the fourth shielding unit 2 both moving along the second diameter direction Y. Optionally, the first diameter direction and the second diameter direction are perpendicular to each other. In other embodiments, the shielding units 2 are provided in two, three, or five groups, etc., and the specific number is not limited. The more groups there are, the more uniformly the shielding members 21 are arranged in the circumferential direction of the shielding ring 1, and the smaller the included angle between the shielding members 21 of different shielding units 2, but the structure is also correspondingly more complex.
[0034] like Figure 3 and Figure 6 As shown, multiple blocking elements 21 in the blocking unit 2 are arranged in a ring around the blocking ring 1, and the multiple blocking elements 21 move along multiple diameter directions of the blocking ring 1. By adopting a structure in which multiple blocking elements 21 slide independently radially along different diameter directions on the blocking ring 1, each blocking element 21 can move independently along its own radial direction, which can form an arbitrary variable envelope profile in the circumferential direction, thus improving flexibility and versatility.
[0035] Optionally, multiple shielding elements 21 are all disposed on the same plane, resulting in a simple structure; alternatively, adjacent shielding elements 21 are disposed on two parallel and spaced planes, which can form a situation where the projections of all shielding elements 21 on the wafer overlap without gaps, facilitating the formation of an edge electric field shielding region and the layout of multiple shielding elements 21.
[0036] Optionally, the orthographic projection of the shielding element 21 on the wafer is rectangular, with a simple structure. The smaller the width of the shielding element 21, the greater the density of its arrangement around the shielding ring 1, and the finer the outline shape formed after the shielding elements 21 are combined and arranged.
[0037] Optionally, the shielding ring 1 is provided with multiple guide portions 11, and multiple shielding members 21 are slidably connected to the multiple guide portions 11 in a one-to-one correspondence, to ensure the movement accuracy of the shielding members 21 and prevent structural interference between the shielding members 21. Figure 1 and Figure 2 As shown, the shielding ring 1 is equipped with multiple guide rails, and multiple shielding components 21 are slidably connected to the multiple guide rails. Figure 3 and Figure 4 As shown, the shielding ring 1 has a groove at the middle position along the axial direction, and multiple grooves are arranged around the circumference of the shielding ring 1. The grooves form a guide part 11, and the shielding member 21 slides along the groove.
[0038] like Figures 3-5 As shown, the shielding ring 1 is provided with a limiting part 12. When the shielding member 21 moves to the extreme position inside the shielding ring 1, the shielding member 21 is limited by the limiting part 12, which can effectively limit the maximum extension displacement of each shielding member 21 inside the shielding ring 1, avoid the shielding member 21 from excessively extending and interfering or colliding with each other, and improve the safety and reliability of movement; at the same time, it can ensure that the contour formed after each shielding member 21 extends is within a reasonable range, prevent the contour size from exceeding the design boundary, and improve the stability of the overall structure operation and the contour forming accuracy. For example, the top of the shielding ring 1 is provided with a limiting part 12, i.e., a limiting groove. The groove wall facing the central area of the limiting groove is a retaining wall 121. The middle position of the top of the shielding member 21 is provided with a limiting platform 211. When the shielding member 21 moves to the extreme position inside the shielding ring 1, the limiting platform 211 abuts against the groove wall of the limiting groove, i.e., the retaining wall 121. With the cooperation of the limiting platform 211 and the limiting groove, when the limiting platform 211 abuts against the retaining wall 121, the blocking member 21 moves to the limit position inside the blocking ring 1. The retaining wall 121 restricts the blocking member 21 from continuing to move towards the central area, preventing the contour size formed by the corresponding blocking member 21 from exceeding the design boundary, which could lead to problems such as mutual interference or collision between different blocking members 21.
[0039] The shielding unit 2 also includes multiple driving components connected to multiple shielding components 21. Each driving component drives one-to-one movement of the shielding components 21 within a plane perpendicular to the center line of the shielding ring 1, and the multiple shielding components 21 move independently. Based on the number and position of the marks, the driving components drive the shielding components 21 to a preset position, so that the orthographic projections of several shielding components 21 on the wafer coincide with several marked areas to form an edge electric field shielding region, or the shielding components 21 move from the inside to the outside based on the shielding ring 1 to form an edge electric field penetration region. Multiple shielding components 21 are driven by multiple driving components, enabling independent movement between the shielding components 21 and facilitating free combination. In one embodiment, the driving component includes a motor, a lead screw, and a lead screw nut that cooperates with the lead screw. The motor drives the lead screw to rotate, and the shielding component 21 is connected to the lead screw nut. The forward and reverse rotation of the motor drives the lead screw nut and the shielding component 21 to extend and retract.
[0040] The wall thickness of the shielding ring 1 is less than the width of the edge region of the wafer. At least a portion of the remaining shielding member 21 moves so that its orthographic projection on the wafer coincides with the edge region of the wafer, thus shielding the edge region of the wafer. That is, the shielding member 21 and the shielding ring 1 simultaneously shield the edge region of the wafer. When the required shielding width for the edge region of the wafer is large, the shielding member 21 moves inward a larger distance; when the required shielding width for the edge region of the wafer is small, the shielding member 21 moves inward a smaller distance, further improving the applicability to different wafers.
[0041] An electroplating apparatus includes at least an electroplating chamber and a clamp disposed on the upper part of the electroplating chamber. The clamp is used to carry a wafer into the electroplating chamber for electroplating. An anode is disposed inside the electroplating chamber, and a shielding device is located above the anode. The shielding device is as described above, capable of forming an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity in the corresponding region of the wafer edge, or forming an edge electric field penetration region to enhance the electric field intensity in the corresponding region of the wafer edge. By employing the above-mentioned shielding device, the uniformity of the electric field distribution between the central region and the edge region of the wafer, as well as the electroplating uniformity between the marked region and other regions, is improved, thereby improving the overall electroplating uniformity of the wafer.
[0042] like Figure 7 As shown, a masking method employs the masking device described above. The wafer is provided with several marks. The masking method includes: Step S100: Based on the markers, the multiple occlusion elements 21 are grouped to form a first group, the first group including several occlusion elements 21; In step S200, the first set of shielding members 21 moves and combines to form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity in the corresponding region of the wafer edge, or to form an edge electric field penetration region to enhance the electric field intensity in the corresponding region of the wafer edge.
[0043] In the masking device, the masking components 21 are pre-arranged in sequence on the masking ring 1. In step 100, the target masking component 21, i.e., the masking component 21 in the first group, is selected first. Then, in step S200, the target masking component 21 is moved to form the first group of masking components 21 into a contour shape corresponding to the mark. The selection and movement of the masking components 21 are done step by step, which makes the process highly controllable and easy to automate. Only the masking components 21 in the first group are moved, which reduces invalid actions and lowers energy consumption and mechanical wear. The first group of masking components 21 can be flexibly selected and the combination method can be adjusted according to different usage scenarios to achieve rapid switching of various contour shape structures, which significantly improves the overall applicability and scalability.
[0044] The markings are divided into blocking markings and non-blocking markings. Blocking markings are used to indicate that the corresponding blocking element 21 forms an edge electric field blocking region based on the blocking marking, and non-blocking markings are used to indicate that the corresponding blocking element 21 forms an edge electric field penetrating region based on the non-blocking marking; the blocking method also includes: Step S110: Based on the occlusion markers and the non-occlusion markers, the first group is divided into a first branch group and a second branch group; Step S210: Based on the shielding mark, the shielding member 21 of the first branch group moves and combines to form an edge electric field shielding region between the wafer and the anode to reduce the electric field intensity of the corresponding region at the edge of the wafer. Step S220: Based on the non-shielding mark, the shielding member 21 of the second branch group moves and combines to form an edge electric field penetration region between the wafer and the anode to enhance the electric field intensity of the corresponding region at the wafer edge.
[0045] When both masking and non-masking marks exist on the wafer, by dividing the wafer into a first branch group and a second branch group, the wafer can be moved to form the contour shape corresponding to the mark. This allows for the simultaneous formation of two different shapes, meeting diverse molding requirements and broadening the applicability. The two sets of masking components 21 can be selected and moved independently without interference, making control simpler and more reliable. The two sets of masking components 21 can be executed in parallel or stepwise, effectively shortening the overall molding time and improving assembly efficiency. Each set of masking components 21 moves only for its own target shape, resulting in a simpler path and higher positioning accuracy. If one set of masking components 21 experiences adjustment or malfunction, it does not affect the operation of the other set, resulting in stronger overall stability and fault tolerance. Steps S210 and S220 can be executed simultaneously or stepwise, with no requirement on the order.
[0046] When the wall thickness of the shielding ring 1 is less than the width of the edge region of the wafer, the shielding method also includes: Step S300: Divide the remaining blocking elements 21 (excluding the first group) into a second group and a third group; In step S400, the second group of shielding members 21 moves and combines, so that their orthographic projection on the wafer coincides with the edge region of the wafer, thereby shielding the edge region of the wafer. Since the wall thickness of the shielding ring 1 is less than the width of the edge region of the wafer, the second group of shielding members 21 moves and combines, so that the orthographic projection of the shielding member 21 on the wafer coincides with the edge region of the wafer, thereby shielding the edge region of the wafer. That is, the second group of shielding members 21 and the shielding ring 1 simultaneously shield the edge region of the wafer. When the required shielding width of the edge region of the wafer is large, the shielding member 21 moves inward a larger distance; when the required shielding width of the edge region of the wafer is small, the shielding member 21 moves inward a smaller distance, further improving the applicability to different wafers.
[0047] Step S500: The third group of blocking members 21 moves; inside the blocking ring 1, the extension length of the third group of blocking members 21 is less than the extension length of the second group of blocking members 21, which is less than the extension length of the first group of blocking members 21; the third group of blocking members 21 combine to form a groove that is recessed from the inside of the blocking ring 1 to the outside.
[0048] The first set of shielding elements 21 forms an edge electric field shielding region to weaken the electric field intensity in the corresponding region of the wafer edge, which affects the circumferential electric field distribution to a certain extent, especially the electric field distribution on the opposite side of the first set of shielding elements 21, resulting in a weakening of the electric field line density on the opposite side. The groove formed by the third set of shielding elements 21 increases the electric field line density on the opposite side accordingly, improving the uniformity of the electric field distribution along the circumferential direction in the region near the wafer edge. Furthermore, the third set of shielding elements 21 and the first branch group of shielding elements 21 are located on both sides of the shielding ring 1 along the radial direction.
[0049] By dividing the work into a second and third group, and moving them to form contour shapes corresponding to the corresponding marks, contour shapes and grooves for shielding the wafer edge area can be formed simultaneously. The three groups of shielding components 21, namely the first, second, and third groups, can be selected and moved independently without interference, making control simpler and more reliable. The three groups of shielding components 21 can be executed in parallel or step by step, effectively shortening the overall forming time and improving assembly efficiency. Each group of shielding components 21 moves only for its own target shape, resulting in a simpler path and higher positioning accuracy. When one group of shielding components 21 is adjusted or malfunctions, it does not affect the work of other groups, resulting in stronger overall stability and fault tolerance. The remaining shielding components 21, excluding the first group, are divided into a second and third group. This step can be performed during step S300 or after step S100. Steps S200, S400, and S500 can be performed simultaneously or step by step, with no requirement on the order.
[0050] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.
Claims
1. A shielding device, characterized in that, Located between the wafer and the anode in an electroplating apparatus, the wafer is marked with several marks, and the shielding device includes: A shielding ring (1) is arranged parallel between the wafer and the anode, the center of the shielding ring is arranged corresponding to the center of the wafer, and the orthogonal projection of the shielding ring (1) on the wafer coincides with the edge region of the wafer; The shielding unit (2) is disposed on the shielding ring (1) and includes multiple shielding members (21). After the multiple shielding members (21) are freely moved and combined based on the marks on the wafer, they can form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity of the corresponding region of the wafer edge, or form an edge electric field penetration region to enhance the electric field intensity of the corresponding region of the wafer edge.
2. The shielding device according to claim 1, characterized in that, The shielding unit (2) further includes multiple driving units connected to multiple shielding members (21). The multiple driving units drive multiple shielding members (21) to move in a plane perpendicular to the center line of the shielding ring (1), and the multiple shielding members (21) move independently. According to the number and position of the marks, the driving units drive the shielding members (21) to move to a preset position, so that the orthographic projection of several shielding members (21) on the wafer coincides with several marked areas to form an edge electric field shielding area, or the shielding members move from the inside to the outside based on the shielding ring to form an edge electric field penetration area.
3. The shielding device according to claim 2, characterized in that, The driving component includes a motor, a lead screw, and a lead screw nut that cooperates with the lead screw. The motor drives the lead screw to rotate, and the shield (21) is connected to the lead screw nut.
4. The shielding device according to claim 1, characterized in that, The markings are divided into occlusion markings and non-occlusion markings. The occlusion markings are used to indicate that the corresponding occlusion member (21) forms an edge electric field occlusion region based on the occlusion markings. The non-occlusion markings are used to indicate that the corresponding occlusion member (21) forms an edge electric field penetration region based on the non-occlusion markings.
5. The shielding device according to claim 1, characterized in that, The shielding ring (1) is provided with a plurality of guide portions (11), and the plurality of shielding members (21) are slidably connected to the plurality of guide portions (11) in a one-to-one correspondence.
6. The shielding device according to claim 1, characterized in that, The shielding ring (1) is provided with a limiting part (12). When the shielding member (21) moves to the limit position inside the shielding ring (1), the shielding member (21) is limited to the limiting part (12).
7. The shielding device according to claim 1, characterized in that, The multiple shielding members (21) are all disposed on the same plane; or, adjacent shielding members (21) are disposed on two planes that are parallel and spaced apart.
8. The shielding device according to claim 1, characterized in that, The shielding unit (2) is provided in multiple sets, and the multiple sets of shielding units (2) are arranged around the shielding ring (1). The moving directions of multiple shielding members (21) in the shielding unit (2) in the same set are parallel to each other, and all move along one diameter direction of the shielding ring (1); the moving directions of the shielding members (21) in adjacent shielding units (2) are set at an angle.
9. The shielding device according to claim 8, characterized in that, The shielding ring (1) has a first diameter and a second diameter that are perpendicular to each other; the shielding unit (2) is provided in four groups, the first shielding unit (2) and the second shielding unit (2) are provided on both sides of the shielding ring (1) along the first diameter direction (X), and the shielding member (21) of the first shielding unit (2) and the shielding member (21) of the second shielding unit (2) both move along the first diameter direction (X); the third shielding unit (2) and the fourth shielding unit (2) are provided on both sides of the shielding ring (1) along the second diameter direction (Y), and the shielding member (21) of the third shielding unit (2) and the shielding member (21) of the fourth shielding unit (2) both move along the second diameter direction (Y).
10. The shielding device according to claim 1, characterized in that, The multiple shielding members (21) in the shielding unit (2) are arranged in a ring around the shielding ring (1), and the multiple shielding members (21) move in a corresponding manner along multiple diameter directions of the shielding ring (1).
11. The shielding device according to claim 1, characterized in that, The wall thickness of the shielding ring (1) is less than the width of the edge region of the wafer. At least a portion of the remaining shielding member (21) moves so that the orthographic projection of the shielding member (21) on the wafer coincides with the edge region of the wafer, thereby shielding the edge region of the wafer.
12. An electroplating apparatus, comprising at least an electroplating chamber and a clamp disposed on the upper part of the electroplating chamber, the clamp being used to carry a wafer into the electroplating chamber for electroplating, wherein an anode is disposed inside the electroplating chamber and a shielding device is disposed above the anode, characterized in that, The shielding device is the shielding device as described in any one of claims 1-11, which can form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity in the corresponding region of the wafer edge, or form an edge electric field penetration region to enhance the electric field intensity in the corresponding region of the wafer edge.
13. A method of occlusion, characterized in that, The wafer is provided with a plurality of marks using the shielding device as described in any one of claims 1-11, and the shielding method includes: Based on the markings, the multiple blocking elements (21) are grouped to form a first group, the first group including a plurality of the blocking elements (21); The shielding members (21) of the first group move and combine to form an edge electric field shielding region between the wafer and the anode to weaken the electric field intensity of the corresponding region at the edge of the wafer, or to form an edge electric field penetrating region to enhance the electric field intensity of the corresponding region at the edge of the wafer.
14. The blocking method according to claim 13, characterized in that, The markings are divided into occlusion markings and non-occlusion markings. The occlusion markings are used to indicate that the corresponding occlusion member (21) forms an edge electric field occlusion region based on the occlusion markings. The non-occlusion markings are used to indicate that the corresponding occlusion member (21) forms an edge electric field penetration region based on the non-occlusion markings. The occlusion method further includes: Based on the occlusion marker and the non-occlusion marker, the first group is divided into a first branch group and a second branch group; Based on the shielding mark, the shielding member (21) of the first branch group moves and combines to form an edge electric field shielding region between the wafer and the anode to weaken the electric field strength of the corresponding region at the edge of the wafer. Based on the unshielded mark, the shielding member (21) of the second branch group moves and combines to form an edge electric field penetration region between the wafer and the anode to enhance the electric field strength of the corresponding region at the edge of the wafer.
15. The blocking method according to claim 13, characterized in that, The wall thickness of the shielding ring (1) is less than the width of the edge region of the wafer, and the shielding method further includes: The remaining shielding components (21) excluding the first group are divided into the second group and the third group; The second group of shielding members (21) moves so that after the combination of several shielding members (21) in the second group, the orthographic projection on the wafer coincides with the edge region of the wafer, so as to shield the edge region of the wafer. The third group of shielding members (21) moves; inside the shielding ring (1), the extension length of the third group of shielding members (21) is less than the extension length of the second group of shielding members (21) is less than the extension length of the first group of shielding members (21); the third group of shielding members (21) are combined to form a groove that is recessed from the inside to the outside of the shielding ring (1).