Display device

Abstract

A display device according to an embodiment of the disclosure includes a planarization film disposed above a substrate and having a protruding portion, an anode disposed on a top surface of the protruding portion of the planarization film and including at least a first region and a second region having different thicknesses, an organic layer disposed on the anode, and a cathode disposed on the organic layer corresponding to the top surface and a lateral portion of the protruding portion, thereby improving light extraction efficiency by increasing a light emission distribution of extracted light.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0174045, filed on November 28, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This specification relates to a display device. Background Technology

[0004] Display devices that visually display electrical information signals have been rapidly developed with the advent of the information age. Various research efforts are ongoing to develop display devices that are thin, lightweight, low-power, and offer improved performance.

[0005] Representative display devices may include liquid crystal displays (LCDs), field emission displays (FEDs), electrowetting displays (EWDs), and organic light-emitting diode displays (OLEDs).

[0006] Electroluminescent displays, as a representative type of organic light-emitting display devices, refer to self-emissive display devices. Unlike liquid crystal displays (LCDs), electroluminescent displays do not require a separate light source, thus allowing them to be manufactured as lightweight and thin devices. Furthermore, electroluminescent displays are advantageous in terms of power consumption because they operate at low voltages. Moreover, due to their superior performance in color reproduction, response speed, viewing angle, and contrast ratio (CR), electroluminescent displays are expected to be used in various fields.

[0007] In electroluminescent display devices, a light-emitting element is configured by placing multiple organic layers, including a light-emitting layer, between two electrodes serving as an anode electrode and a cathode electrode. For example, when positive holes are injected into the light-emitting layer from the anode electrode and electrons are injected into the light-emitting layer from the cathode electrode, the injected electrons and positive holes recombine in the light-emitting layer and emit light while generating excitons.

[0008] Meanwhile, the problem with electroluminescent display devices is that some of the light beams emitted from the light-emitting layer are trapped in the display panel and do not propagate to the outside of the display panel, which reduces the light extraction efficiency and luminous efficiency of the electroluminescent display device.

[0009] The amount of light emitted from the light-emitting layer increases with the amount of current applied to the electroluminescent display device. Therefore, a larger amount of current can be applied to the light-emitting layer to further improve the brightness of the electroluminescent display device. However, increasing the amount of current increases power consumption and reduces the lifespan of the electroluminescent display device. Summary of the Invention

[0010] The objective of this disclosure is to provide a display device that can improve efficiency by increasing light extraction efficiency.

[0011] Another objective of this disclosure is to provide a display device that can further extend its lifespan by improving light extraction efficiency.

[0012] The purpose of this disclosure is not limited to the above-mentioned purposes, and other purposes not mentioned above will be clearly understood by those skilled in the art based on the following description.

[0013] To achieve the above objectives, a display device according to embodiments of the present disclosure may include: a planarization film disposed above a substrate and having a protruding portion; an anode disposed on the top surface of the protruding portion of the planarization film and including at least a first region and a second region with different thicknesses; an organic layer disposed on the anode; and a cathode disposed on the organic layer, corresponding to the top surface and lateral portion of the protruding portion.

[0014] Further details of exemplary embodiments are included in the detailed description and accompanying drawings.

[0015] This disclosure provides a display device that includes a cathode side mirror structure and has improved light extraction efficiency.

[0016] This disclosure can provide a display device in which the thickness of the end of the anode is reduced to improve the emission distribution of the extracted light, thereby further improving the light extraction efficiency.

[0017] In this context, increased brightness can reduce power consumption, thereby reducing the amount of fossil fuels used to generate power and reducing greenhouse gas emissions, thus enabling ESG (Environmental, Social, and Governmental) goals.

[0018] The effects of this disclosure are not limited to the examples above, and many more effects are included in this specification. Attached Figure Description

[0019] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0020] Figure 1 This is an exemplary illustration of a configuration diagram of a display device according to the present disclosure;

[0021] Figure 2 This is a schematic top plan view of the display device according to the present disclosure;

[0022] Figure 3This is a top view schematic diagram of the pixel structure of the display panel according to the first embodiment of this disclosure;

[0023] Figure 4 It is along Figure 3 A cross-sectional view taken by line A-A' in the diagram;

[0024] Figure 5 It is along Figure 3 A cross-sectional view taken by line B-B' in the diagram;

[0025] Figure 6A and Figure 6B This is a graph showing the electroluminescence spectrum of the comparative example;

[0026] Figure 7A and Figure 7B This is a graph showing the electroluminescence spectrum of Experimental Example 1;

[0027] Figure 8A and Figure 8B This is a graph showing the electroluminescence spectrum of Experimental Example 2;

[0028] Figure 9A and Figure 9B This is a graph showing the electroluminescence spectrum of Experimental Example 3;

[0029] Figure 10A and Figure 10B This is a graph showing the electroluminescence spectrum of Experimental Example 4;

[0030] Figure 11 This is a table showing the intensity of the electroluminescence spectrum relative to the incident angles of comparative examples and experimental examples 1 to 4;

[0031] Figure 12 This is a view showing the simulation results of light emission based on the incident angle of light emission;

[0032] Figures 13A to 13E The manufacturing process is shown in sequence. Figure 5 A cross-sectional view of a portion of the process of displaying the panel; and

[0033] Figure 14 This is a cross-sectional view of a display panel according to a second embodiment of the present disclosure. Detailed Implementation

[0034] The advantages and features of this disclosure, as well as the methods for achieving these advantages and features, will become clear from the exemplary embodiments described in detail below, taken in conjunction with the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. Exemplary embodiments are provided by way of example only so that those skilled in the art can fully understand the disclosure and scope of this disclosure.

[0035] The shapes, dimensions, ratios, angles, quantities, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Furthermore, in the following description of this disclosure, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “consisting of” as used herein are generally intended to allow for the addition of additional components, unless used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0036] Even if not explicitly stated, components are interpreted as including the normal tolerance range.

[0037] When using terms such as “above,” “over,” “below,” and “beside” to describe the positional relationship between two parts, one or more parts may be positioned between the two parts, unless the term is used with the terms “immediately adjacent” or “directly.”

[0038] When an element or layer is placed "on" another element or layer, the other layer or element can be directly inserted on or between the other element.

[0039] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component mentioned below can be the second component in the technical concept of this disclosure.

[0040] Throughout the specification, the same reference numerals generally denote the same elements.

[0041] For ease of description, the dimensions and thickness of each component shown in the accompanying drawings are illustrated, and this disclosure is not limited to the dimensions and thickness of the components shown.

[0042] Features of the various embodiments of this disclosure may be partially or completely complied with or combined with each other, and may be technically interlocked and operated in various ways, and embodiments may be performed independently of each other or in relation to each other.

[0043] In the following, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0044] Figure 1 This is an exemplary illustration of a configuration diagram of a display device according to the present disclosure.

[0045] The display device according to embodiments of the present disclosure may include a display device, an illumination device, an electroluminescent display device, etc. Hereinafter, for ease of description, the description will focus on the display device. However, the following description will also apply equally to various types of display devices, such as illumination devices and electroluminescent display devices.

[0046] refer to Figure 1 The display device according to embodiments of the present disclosure may include a display panel DISP configured to display an image or output light and a driving circuit configured to operate the display panel DISP.

[0047] The display panel DISP includes multiple data lines (DL) and multiple gate lines (GL). Multiple sub-pixels (SP) defined by the multiple data lines (DL) and multiple gate lines (GL) can be arranged in a matrix.

[0048] Multiple data lines (DL) and multiple gate lines (GL) of a display panel (DISP) can be arranged to intersect each other. For example, multiple gate lines (GL) can be arranged in rows or columns, and multiple data lines (DL) can be arranged in columns or rows. In the following description, for ease of description, it is assumed that multiple gate lines (GL) are arranged in rows and multiple data lines (DL) are arranged in columns.

[0049] In addition to multiple data lines (DL) and multiple gate lines (GL), other types of signal lines can also be set on the display panel (DISP) depending on the sub-pixel structure, etc. For example, drive voltage lines, reference voltage lines, common voltage lines, etc. can also be set.

[0050] Display panel DISP can be one of various types of panels, such as liquid crystal display (LCD) panels and organic light-emitting diode (OLED) panels.

[0051] The type of signal lines disposed on the display panel DISP can vary depending on the sub-pixel structure, panel type, etc. Furthermore, in this disclosure, signal lines can conceptually include electrodes to which signals are applied.

[0052] The display panel DISP may include a display area AA that displays images and a non-display area NA that is located around the display area AA and does not display images. In this case, the non-display area NA is also called the border area.

[0053] Multiple subpixels SP used to display an image can be set in the display area AA.

[0054] The pad portion can be located in the non-display area NA and electrically connected to the data driver DDR. Multiple data link lines for connecting the pad portion and multiple data lines DL can be located in the non-display area NA. In this case, the multiple data link lines can be extensions of the multiple data lines DL into the non-display area NA. Alternatively, the multiple data link lines can be separate patterns electrically connected to the multiple data lines DL.

[0055] Furthermore, the gate drive dependent lines can be located in the non-display area NA, and transmit the voltage required to operate the gate to the gate driver GDR via pads electrically connected to the data driver DDR. For example, the gate drive dependent lines may include clock lines for transmitting clock signals, gate voltage lines for transmitting gate voltage, and gate drive control signal lines for transmitting various types of control signals required to generate scan signals. Unlike the gate lines GL located in the display area AA, the gate drive dependent lines can be located in the non-display area NA.

[0056] In addition, for example, the driving circuit may include a data driver DDR configured to operate multiple data lines DL, a gate driver GDR configured to operate multiple gate lines GL, and a timing controller TC configured to control the data driver DDR and the gate driver GDR.

[0057] As mentioned above, the data driver DDR can operate multiple data lines DL by outputting data voltage to multiple data lines DL.

[0058] In addition, the gate driver GDR can operate multiple gate lines GL by outputting scan signals to multiple gate lines GL.

[0059] For example, the timing controller TC can control the drive operation of the data driver DDR and the gate driver GDR by supplying various types of control signals DCS and GCS required for the drive operation of the data driver DDR and the gate driver GDR. The timing controller TC can also supply image data DATA to the data driver DDR.

[0060] The timing controller TC can start scanning based on the timing implemented in each frame, output image data DATA generated by converting input image data from external input into the data signal type for the data driver DDR, and control data operation at appropriate times according to the scan.

[0061] For example, in order to control the data driver DDR and the gate driver GDR, the timing controller TC can receive timing signals from the outside, such as vertical synchronization signals, horizontal synchronization signals, input data enable signals and clock signals, generate various types of control signals, and output the control signals to the data driver DDR and the gate driver GDR.

[0062] For example, in order to control the gate driver GDR, the timing controller TC can output various types of gate control signals GCS, including gate start pulse GSP, gate shift clock GSC, gate output enable signal GOE, etc.

[0063] In addition, in order to control the data driver DDR, the timing controller TC can output various types of data control signals DCS, including source start pulse SSP, source sampling clock SSC, source output enable signal SOE, etc.

[0064] The timing controller TC can be implemented as a component provided separately from the data driver DDR, or implemented as an integrated circuit by integrating it with the data driver DDR.

[0065] The data driver DDR can receive image data DATA from the timing controller TC and operate multiple data lines DL by supplying data voltage to them. The data driver DDR is also called a source driver.

[0066] The data driver DDR can send various types of signals to or receive various types of signals from the timing controller TC through various types of interfaces.

[0067] Furthermore, a gate driver (GDR) can sequentially operate multiple gate lines GL by sequentially supplying scan signals to them. In this case, the gate driver (GDR) is also called a scan driver.

[0068] The gate driver GDR can sequentially supply scan signals with on-state or off-state voltages to multiple gate lines GL under the control of the timing controller TC.

[0069] When a specific gate line is turned on by the gate driver GDR, the data driver DDR can convert the image data DATA received from the timing controller TC into an analog data voltage and supply the analog data voltage to multiple data lines DL.

[0070] The data driver DDR can be located on only one side of the display panel DISP. In some instances, the data driver DDR can be located on two opposite sides of the display panel DISP, depending on the driving method, panel design method, etc. For example, the data driver DDR can be located on the top or bottom side of the display panel DISP. Alternatively, the data driver DDR can be located on both the top and bottom sides of the display panel DISP.

[0071] The gate driver (GDR) can be positioned on only one side of the display panel (DISP). In some instances, the GDR can be positioned on two opposite sides of the DISP, depending on the driving method, panel design, etc. For example, the GDR can be positioned on the left or right side of the DISP. Alternatively, the GDR can be positioned on both the left and right sides of the DISP.

[0072] The data driver DDR can be implemented as including one or more source driver integrated circuits SDIC.

[0073] For example, source driver integrated circuits may each include shift registers, latch circuits, digital-to-analog converters (DACs), output buffers, etc. In some instances, data drivers (DDRs) may also include one or more analog-to-digital converters (ADCs).

[0074] Alternatively, for example, the source driver integrated circuit can be connected to the bonding pads of the display panel DISP as either a tape-on-board (TAB) type or a chip-on-glass (COG) type. Alternatively, the source driver integrated circuit can be directly disposed on the display panel DISP. In some instances, the source driver integrated circuit can be disposed by integration onto the display panel DISP. Additionally, the source driver integrated circuit can each be implemented as a chip-on-film (COF) type. In this case, the source driver integrated circuit can each be mounted on a circuit film and electrically connected to the data lines DL of the display panel DISP through the circuit film.

[0075] The gate driver GDR can be configured as multiple gate drive circuits. In this case, the multiple gate drive circuits can each correspond to multiple gate lines GL.

[0076] For example, gate drive circuits may each include shift registers, level shifters, etc.

[0077] Gate drive circuits can be connected to the bonding pads of the display panel DISP as either Tape-on-Board (TAB) or Chip-on-Glass (COG) type. Alternatively, each gate drive circuit can be implemented as Chip-on-Film (COF) type. In this case, each gate drive circuit can be mounted on a circuit film and electrically connected to the gate line GL of the display panel DISP through the circuit film. Furthermore, each gate drive circuit can be implemented as a Gate-in-Panel (GIP) type and embedded in the display panel DISP. For example, each gate drive circuit can be formed directly on the display panel DISP.

[0078] Figure 2 This is a schematic top plan view of the display device according to the present disclosure.

[0079] refer to Figure 2 In the display device according to embodiments of the present disclosure, the data driver can be implemented as a chip-on-film type among the various types described above (TAB, COG, COF, etc.), and the gate driver can be implemented as a gate-in-panel (GIP) type among the various types (TAB, COG, COF, GIP, etc.). However, the present disclosure is not limited thereto, and various types can be provided.

[0080] The data driver can be implemented as one or more source driver integrated circuits (SDICs). Figure 2 An example is shown in which the data driver is implemented as a multiple source driver integrated circuit SDIC. However, this disclosure is not limited thereto.

[0081] When the data driver is implemented as a COF type, the source driver integrated circuit SDIC constituting the data driver can be mounted on the source-side circuit film SF.

[0082] For example, one side of the source-side circuit film SF can be electrically connected to the pad portion (pad assembly) located in the non-display area NA of the display panel DISP.

[0083] Additionally, the lines used for electrically connecting the source driver integrated circuit (SDIC) and the display panel (DISP) can be placed on the source-side circuit film (SF).

[0084] The display device may include one or more source printed circuit boards (SPCBs) and control printed circuit boards (CPCBs) for mounting control components and various types of electrical devices, so as to make circuit connections to multiple source driver integrated circuits (SDICs) and other devices.

[0085] For example, one side of the source-side circuit film SF on which the source driver integrated circuit SDIC is mounted can be electrically connected to the non-display area NA of the display panel DISP, and the other side of the source-side circuit film SF can be electrically connected to the source printed circuit board SPCB.

[0086] In addition, the timing controller TC can be set on the control printed circuit board (CPCB) and control the operation of the data driver and the gate driver.

[0087] Power management integrated circuits (PMICs) can be further mounted on control printed circuit boards (CPCBs) and supply various types of voltages or currents to display panels (DISPs), data drivers, gate drivers, etc., or control the various types of voltages or currents to be supplied.

[0088] The source printed circuit board (SPCB) and the control printed circuit board (CPCB) can be circuitally connected through at least one connecting member (CBL).

[0089] For example, the connecting component CBL can be a flexible printed circuit (FPC), a flexible flat cable (FFC), etc.

[0090] For example, one or more source printed circuit boards (SPCBs) and control printed circuit boards (CPCBs) can be implemented by integrating them into a single printed circuit board.

[0091] When the gate driver is implemented as a gate in panel (GIP) type, the multiple gate drive circuits (GDCs) included in the gate driver can be directly formed on the non-display area (NA) of the display panel (DISP).

[0092] Each gate drive circuit (GDC) can output a corresponding scan signal to the corresponding gate line in the display area AA of the display panel (DISP).

[0093] Multiple gate drive circuits (GDCs) located on the display panel (DISP) can receive various types of signals (clock signal, high-level gate voltage VGH, low-level gate voltage, start signal, reset signal, etc.) required to generate scan signals through gate drive correlation lines located in the non-display area (NA).

[0094] The gate drive-related lines located in the non-display area NA can be electrically connected to the source-side circuit film SF, which is set to be closest to the multiple gate drive circuits GDC.

[0095] Figure 3 This is a top plan view showing the pixel structure of a display panel according to a first embodiment of the present disclosure.

[0096] Figure 3 A portion of the display panel DISP is shown, with four sub-pixels SP1, SP2, SP3, and SP4 set on it as an example. Figure 3 An anode 122 configured to define a main light-emitting region EA1 and a second planarization film 116 including a protruding region PA are illustrated exemplary.

[0097] refer to Figure 3 The display panel DISP according to the first embodiment of the present disclosure may include a pixel region in which a plurality of sub-pixels SP1, SP2, SP3 and SP4 are present, and a line region in which various types of signal lines are arranged around the pixel region.

[0098] The first to fourth sub-pixels SP1, SP2, SP3 and SP4 can be set in the pixel area.

[0099] For example, the first sub-pixel SP1 could be the red sub-pixel R.

[0100] For example, the second sub-pixel SP2 could be the white sub-pixel W.

[0101] For example, the third sub-pixel SP3 could be the blue sub-pixel B.

[0102] For example, the fourth sub-pixel SP4 could be the green sub-pixel G. However, this disclosure is not limited to the arrangement of multiple sub-pixels SP1, SP2, SP3, and SP4.

[0103] For example, the first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 may each have a polygonal shape, such as a rectangular shape or a square shape. However, this disclosure is not limited thereto. The first sub-pixel SP1, the second sub-pixel SP2, the third sub-pixel SP3, and the fourth sub-pixel SP4 may each have various shapes, such as circular or elliptical shapes. In this case, the shape of the anode 122 (specifically, the first region 122a of the anode 122) is defined as the shape of each of the sub-pixels SP1, SP2, SP3, and SP4. However, this disclosure is not limited thereto.

[0104] Figure 3 An example is shown in which a first sub-pixel SP1, a second sub-pixel SP2, a third sub-pixel SP3, and a fourth sub-pixel SP4 are combined to form a pixel. However, this disclosure is not limited thereto.

[0105] Furthermore, in this disclosure, in addition to the main light-emitting region EA1, a reflective region is added through the side mirror (SM) structure of the cathode, thereby expanding the light-emitting region compared to each of the sub-pixels SP1, SP2, SP3, and SP4. (See reference...) Figure 4 and Figure 5 Describe the side mirror structure of the cathode in detail.

[0106] In the first embodiment of this disclosure, regions 122a and 122b differ in thickness of the anode 122, which can improve the light emission distribution of the extracted light. Therefore, the light extraction efficiency can be further improved. Reference will be made below. Figure 4 and Figure 5 Please describe this configuration in detail.

[0107] Figure 4 It is along Figure 3 The cross-sectional view taken by line A-A' in the diagram.

[0108] Figure 5 It is along Figure 3 The cross-sectional view taken by line B-B' in the diagram.

[0109] Figure 4 A portion of a cross section is shown by cutting a white sub-pixel of a display panel according to a first embodiment of the present disclosure in an upward / downward direction.

[0110] Figure 5 A portion of a cross section is shown by cutting a white sub-pixel of a display panel according to a first embodiment of the present disclosure in a left / right direction.

[0111] For ease of description, Figure 4 and Figure 5Components disposed above the light-emitting element 120 are not shown. However, this disclosure may include an encapsulation structure disposed above the light-emitting element 120.

[0112] refer to Figure 4 and Figure 5 Buffer layer 112, such as multiple buffer layers or lower buffer layers, can be disposed above substrate 111.

[0113] Recently, flexible substrates 111 have been made of flexible materials such as flexible plastics.

[0114] The substrate 111 may be provided in the form of a film made of one of the following: polyester polymers, silicone polymers, acrylic polymers, polyolefin polymers and copolymers thereof.

[0115] Substrate 111 may include a first substrate, a second substrate, and an insulating film. The insulating film may be disposed between the first substrate and the second substrate. As described above, substrate 111 may include a first substrate, a second substrate, and an insulating film to inhibit moisture penetration. For example, both the first substrate and the second substrate may be polyimide (PI) substrates.

[0116] Various signal lines, such as data lines DL, reference voltage lines REF, or common voltage lines, can be disposed on substrate 111. However, this disclosure is not limited thereto. Data lines DL, reference voltage lines REF, or common voltage lines can be disposed on buffer layer 112. For example, data lines DL, reference voltage lines REF, or common voltage lines can be disposed in the first non-light-emitting region NEA1.

[0117] For example, multiple buffer layers can delay the diffusion of moisture or oxygen that has penetrated into the substrate 111. Multiple buffer layers can be configured by alternately stacking silicon nitride (SiNx) and silicon oxide (SiOx) at least once.

[0118] For example, the lower buffer layer can be used to protect the semiconductor layer 134 and suppress various types of defects introduced from the substrate 111.

[0119] For example, the lower buffer layer can be made of amorphous silicon, silicon nitride (SiNx), silicon oxide (SiOx), etc.

[0120] The thin-film driving transistor 130 can be disposed above the buffer layer 112.

[0121] Specifically, the semiconductor layer 134 may be disposed in a first non-light-emitting region NEA1 provided above the substrate 111.

[0122] For example, semiconductor layer 134 may be made of polycrystalline semiconductor and have a channel region, a source region, and a drain region. However, this disclosure is not limited thereto. Semiconductor layer 134 may be made of amorphous silicon or oxide semiconductor.

[0123] The gate insulating film 113 can be disposed on the semiconductor layer 134.

[0124] The gate insulating film 113 may be configured as a single layer or multiple layers made of silicon nitride (SiNx) or silicon oxide (SiOx). However, this disclosure is not limited thereto.

[0125] The gate line can be disposed on the gate insulating film 113 in a first direction, and a gate electrode 131 connected to the gate line can be disposed thereon. However, this disclosure is not limited thereto. The gate line can be disposed on the substrate 111 together with the data line DL.

[0126] The gate electrode 131 can be disposed on the gate insulating film 113 and overlap with the semiconductor layer 134.

[0127] For example, the gate electrode 131 and the gate line may each be configured as a single layer or multiple layers made of copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), or alloys thereof, as conductive metals. However, this disclosure is not limited thereto.

[0128] Interlayer insulating film 114 can be disposed on gate electrode 131 and cover gate electrode 131.

[0129] For example, the interlayer insulating film 114 can be configured as a single layer or multiple layers made of silicon nitride (SiNx) or silicon oxide (SiOx). However, this disclosure is not limited thereto.

[0130] In this case, contact holes at the two opposite ends of the exposed semiconductor layer 134 can be formed by selectively removing a portion of the interlayer insulating film 114 and a portion of the gate insulating film 113.

[0131] In addition, the source electrode 132 and the drain electrode 133, which are respectively connected to the two opposite ends of the semiconductor layer 134, can be disposed on the interlayer insulating film 114.

[0132] A protective film may be disposed above the source electrode 132 and the drain electrode 133. In some embodiments, a protective film may not be required.

[0133] The protective film can be configured as a single layer or multiple layers made of silicon nitride (SiNx) or silicon oxide (SiOx). However, this disclosure is not limited thereto.

[0134] Planarization films 115 and 116 can be applied to the protective film.

[0135] The planarization films 115 and 116 may have a multilayer structure comprising at least two layers. For example, the planarization films 115 and 116 may include a first planarization film 115 and a second planarization film 116. The first planarization layer 115 may be configured to cover the thin-film driving transistor 130 and to partially expose the source electrode 132 or drain electrode 133 of the thin-film driving transistor 130.

[0136] The first planarization film 115 may have a thickness of about 2 μm. However, this disclosure is not limited thereto.

[0137] The first planarization film 115 can be an outer coating.

[0138] For example, the connecting electrode 135 can be disposed on the first planarization film 115 and electrically connect the thin film driving transistor 130 and the light-emitting element 120.

[0139] The connecting electrode 135 may be made of materials such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), or alloys thereof. However, this disclosure is not limited thereto.

[0140] The color filter CF can be set on the first planarization film 115.

[0141] The color filter CF is used to convert the color of the light emitted from the light-emitting element 120. The color filter CF can be one of a red color filter, a green color filter, and a blue color filter.

[0142] In this case, for example, a white filter can be set in a white subpixel, or no filter can be set in a white subpixel.

[0143] Color filters (CFs) can be made of materials with a refractive index of approximately 1.5.

[0144] The second planarization film 116 can be disposed above the first planarization film 115 and the color filter CF.

[0145] In the display panel DISP of the first embodiment of this disclosure, the configuration of planarization films 115 and 116 as two layers is based on the fact that the number of various types of signal lines increases with the high resolution of the display panel DISP. An additional layer is provided because it is difficult to place all lines on a single layer while ensuring minimal spacing. Adding an additional layer (e.g., a second planarization film 116) provides margin for line placement, which is beneficial for line / electrode deployment design. Furthermore, when a dielectric material is used for the planarization films 115 and 116 having a multilayer structure, the planarization films 115 and 116 can be used to generate capacitance between the metal layers.

[0146] A second planarization film 116 can be formed, exposing a portion of the connection electrode 135. The drain electrode 133 of the thin-film driven transistor 130 and the anode 122 of the light-emitting element 120 can be electrically connected via the connection electrode 135.

[0147] Both planarization films 115 and 116 can be made of one or more materials selected from acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, benzocyclobutene resin, and polyphenylene sulfide resin. However, this disclosure is not limited thereto. For ease of description, the second planarization film 116 may also be referred to as a planarization film.

[0148] According to a first embodiment of the present disclosure, the second planarization film 116 may include a bottom surface layer 116a disposed on the first planarization film 115 and disposed in all the main light-emitting regions EA1, the reflection region EA2, the first non-light-emitting region NEA1 and the second non-light-emitting region NEA2, and the second planarization film 116 may include a protruding portion 116b disposed on the bottom surface layer 116a and protruding at a position corresponding to the main light-emitting region EA1 of the sub-pixel.

[0149] According to a first embodiment of this disclosure, the second planarization film 116 may have a protrusion 116b and the top surface of the protrusion 116b and the top surface of the embankment 117 of the second planarization film 116 are planarized. The top surface of the protrusion 116b of the second planarization film 116 may correspond to the first region 122a and the second region 122b of the anode 122.

[0150] refer to Figure 3 In a planar view, the main luminous region EA1 or the prominent region PA can have an approximately (or completely) polygonal shape, such as a rectangular shape. However, this disclosure is not limited thereto. The main luminous region EA1 or the prominent region PA can have various shapes, such as circular or elliptical shapes.

[0151] For example, the protruding portion 116b may include a top surface, a lateral portion, and a bottom surface.

[0152] The top surface of the protrusion 116b may be a surface located at the uppermost portion of the second planarization film 116, i.e., substantially parallel to the surface of the substrate 111. The top surface of the protrusion 116b may correspond to the main light-emitting region EA1. In substantially the same manner as the main light-emitting region EA1, the top surface of the protrusion 116b may have an approximately (or fully) polygonal shape in a planar view, such as a rectangular shape. However, this disclosure is not limited thereto. The top surface of the protrusion 116b may have various shapes, such as circular or elliptical shapes.

[0153] The lateral portion of the protruding portion 116b can be a surface that extends from the top surface of the protruding portion 116b to the side surface. For example, the lateral portion of the protruding portion 116b can gradually taper at a predetermined angle. Figure 4 and Figure 5 An example is shown in which the top surface and the lateral portion of the protrusion 116b have a straight line shape, and the portion where the top surface and the lateral portion of the protrusion 116b meet defines a vertex. However, this disclosure is not limited thereto. The lateral portion of the protrusion 116b may have a gradually curving line.

[0154] Additionally, the bottom surface of the protrusion 116b can be a surface that meets the bottom surface layer 116a, and the bottom surface of the protrusion 116b can be a surface substantially parallel to the substrate 111. The bottom surface of the protrusion 116b can correspond to the protrusion region PA. In substantially the same manner as the protrusion region PA, the bottom surface of the protrusion 116b can have an approximately (or completely) polygonal shape in a plan view, such as a rectangular shape. However, this disclosure is not limited thereto. The bottom surface of the protrusion 116b can have various shapes, such as circular or elliptical shapes.

[0155] The bottom surface layer 116a and the protruding portion 116b of the second planarization film 116 can be made of the same material and integrated. However, this disclosure is not limited thereto. The bottom surface layer 116a and the protruding portion 116b can be made of different materials and formed by different processes.

[0156] For example, the protruding portion 116b may have a height of about 1.0 μm to 1.5 μm. However, this disclosure is not limited thereto.

[0157] For example, the lateral portion of the protruding portion 116b may taper gradually at approximately 45 degrees to form the side mirror structure of the cathode 126. However, this disclosure is not limited thereto.

[0158] For example, the anode 122 may be disposed on a portion of the top surface of the bottom surface layer 116a of the second planarization film 116, as well as on the top surface and lateral portion of the protrusion 116b. Furthermore, for example, the anode 122 disposed in the main light-emitting region EA1 may be adjacent to the top surface of the protrusion 116b of the second planarization film 116.

[0159] The anode 122 can be configured to correspond to each of the multiple sub-pixels. That is, the anode 122 can be configured to be divided for multiple sub-pixels. The anode 122 can be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), such that light emitted from the light-emitting element 120 exits through the substrate 111 disposed on the rear surface to reach the outside. Furthermore, the anode 122 can be a component element used to supply positive holes to the organic layer 124 and made of a material with a high work function. The anode 122 can have a single-layer or multi-layer structure. When materials with different refractive indices are used, a multi-layer structure can adjust the light distribution by using the refractive index difference. For example, in a multi-layer structure, the lower layer can have a higher refractive index than the upper layer.

[0160] The anode 122 may include a first region 122a and a second region 122b. The first region 122a is disposed on a portion of the top surface of the protrusion 116b of the second planarization film 116 and has a surface substantially parallel to the surface of the substrate 111. The second region 122b is disposed on another portion of the top surface of the protrusion 116b and has a surface substantially parallel to the surface of the substrate 111.

[0161] The second region 122b may be a partial left or right region of the anode 122 disposed on the top surface of the protrusion 116b, and the first region 122a may be the region of the anode 122 other than the partial left or right region disposed on the top surface of the protrusion 116b. For example, the second region 122b may be part of the left edge or the right edge of the anode 122.

[0162] In a first embodiment of this disclosure, the first region 122a and the second region 122b differ in thickness to broaden the light emission distribution of the extracted light. The first region 122a may have a greater thickness than the second region 122b. For example, when the height of the protrusion 116b of the second planarization film 116 is 1.0 μm, the length of the second region 122b may be at least 0.732 μm to reflect all light beams with an incident angle of 60 degrees. Therefore, light beams in the optical path that do not collide with the side mirror structure of the cathode 126 can be extracted by reflection from the side mirror structure of the cathode 126.

[0163] Furthermore, the anode 122 may include a third region 122c extending from the first region 122a to the top surface of the bottom surface layer 116a of the second planarization film 116. For example, in a plan view, the third region 122c may be located at the lower edge of the main light-emitting region EA1. However, this disclosure is not limited thereto.

[0164] For example, the third region 122c may have substantially the same thickness as the first region 122a and a greater thickness than the second region 122b. However, this disclosure is not limited thereto.

[0165] For example, the third region 122c of the anode 122 can be spaced apart from the adjacent third region 122c by a predetermined distance in order to suppress short circuits between adjacent sub-pixels.

[0166] As described above, in a sub-pixel, the second planarization film 116 may include at least one contact hole spaced apart from the protruding region PA. The drain electrode 133 of the thin-film driving transistor 130 and the third region 122c of the anode 122 can be electrically connected through the contact hole.

[0167] The embankment 117 can be set on the second planarization membrane 116.

[0168] For example, the embankment 117 can be provided on the second planarization film 116 and disposed in the first non-light-emitting region NEA1 of the substrate 111.

[0169] Dike 117 can be made of organic materials.

[0170] For example, the embankment 117 may be made of a polyimide-based resin, a propylene-based resin, or a benzocyclobutene-based resin. However, this disclosure is not limited thereto.

[0171] Furthermore, the embankment 117 can be made of a black material. For example, the embankment 117 can be configured by dispersing a black dye in an organic material. However, this disclosure is not limited thereto. The embankment 117 can be made of any black material, as long as the black material is black.

[0172] The portion of the embankment 117 corresponding to the main light-emitting region EA1 of the sub-pixel can be opened. That is, the embankment 117 can be located outside the main light-emitting region EA1.

[0173] Furthermore, in the plan view, portions of the embankment 117 of the first embodiment of this disclosure are differently disposed on the left, right, upper, and lower sides of the main light-emitting region EA1. However, this disclosure is not limited thereto. For example, on the left and right sides of the main light-emitting region EA1, portions of the embankment 117 corresponding to the main light-emitting region EA1, the second non-light-emitting region NEA1, and the reflective region EA2 can be opened. Therefore, on the left and right sides of the main light-emitting region EA1, the embankment 117 can be spaced apart from the protrusion 116b at a predetermined distance. In contrast, on the upper and lower sides of the main light-emitting region EA1, only portions of the embankment 117 corresponding to the main light-emitting region EA1 can be opened. Therefore, on the upper and lower sides of the main light-emitting region EA1, the embankment 117 can be adjacent to or adjacent to the protrusion 116b, and the third region 122c is located therebetween.

[0174] Simultaneously, the main light-emitting region EA1 can have a shape corresponding to the shape of the top surface of the protrusion 116b. The configuration where the shape of any component corresponds to the shape of another component can refer to a configuration where any component has the same shape as another component, any component is the same in shape as another component but different in size, or the shape of any component and the shape of another component are formed by transfer via any method. Therefore, the shape of the main light-emitting region EA1 can be understood as being formed substantially by transferring the shape of the top surface of the protrusion 116b via light emitted from the organic layer 124 located on the top surface of the protrusion 116b.

[0175] In addition, the reflective region EA2 can be positioned around the main emitting region EA1 without overlapping with it.

[0176] Furthermore, the reflective region EA2 can be a closed curve surrounding the main emitting region EA1. Alternatively, the reflective region EA2 can have a shape obtained by breaking a portion of the closed curve.

[0177] Subpixels can be distinguished by the main emitting region EA1.

[0178] The embankment 117 may have lateral portions on the left and right sides of the main light-emitting region EA1, and the lateral portions of the embankment 117 may be surfaces extending from the top surface to the side surface. The lateral portions of the embankment 117 may taper gradually at a predetermined angle. For example, the lateral portions of the embankment 117 may taper gradually at an angle of 30° to 65°. However, this disclosure is not limited thereto.

[0179] In addition, the light-emitting element 120 can be disposed above the second planarization film 116 and electrically connected to the connecting electrode 135 through a contact hole.

[0180] In this case, for example, the light-emitting element 120 may include an anode 122 connected to the drain electrode 133 of the thin-film driving transistor 130, a plurality of organic layers 124 disposed on the anode 122, and a cathode 126 disposed on the organic layers 124. The organic layer 124 may be referred to as the light-emitting portion. However, this disclosure is not limited to this terminology.

[0181] As described above, the anode 122 can be made of a transparent conductive material.

[0182] For ease of description, Figure 4 and Figure 5 An example in which the anode 122 is configured as a single layer is shown. However, this disclosure is not limited thereto. The anode 122 can be configured as a multilayer structure.

[0183] The organic layer 124 can be disposed above the anode 122.

[0184] For example, organic layer 124 may include a hole injection layer, a hole transport layer, an emissive layer, an electron transport layer, and an electron injection layer. In a tandem structure with multiple overlapping emissive layers, charge generation layers may be additionally disposed between the emissive layers. For example, a common emissive layer may be formed to emit white light without distinguishing the color of each sub-pixel, and a color filter CF for distinguishing colors may be provided separately. In this case, the emissive layers may be disposed separately. The hole injection layer, electron injection layer, hole transport layer, or electron transport layer may be provided as a common layer and disposed equally for each sub-pixel.

[0185] Meanwhile, on the left and right sides of the main light-emitting region EA1, the organic layer 124 can be disposed on the top surface of the first region 122a and the second region 122b of the anode 122, a portion of the top surface and the lateral portion of the protrusion 116b of the second planarization film 116, and the top surface and the lateral portion of the embankment 117. Above and below the main light-emitting region EA1, the organic layer 124 can be disposed on the top surface of the first region 122a of the anode 122 and the top surface of the embankment 117. However, this disclosure is not limited thereto.

[0186] Furthermore, the cathode 126 may be disposed on the organic layer 124 such that it is opposite to the anode 122 and the organic layer 124 is therebetween.

[0187] The cathode 126 can be configured as a common layer instead of being divided for each of the multiple sub-pixels.

[0188] The cathode 126 may be made of a metallic material with a low work function to supply electrons to the organic layer 124. The cathode 126 may also be made of a metallic material with high reflectivity to reflect light emitted from the organic layer 124 in the direction toward the substrate 111. For example, the cathode 126 may be made of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), or alloys thereof. However, this disclosure is not limited thereto.

[0189] For example, the cathode 126 of the first embodiment of this disclosure may include a first region 126a and a second region 126b. The first region 126a is disposed in the main light-emitting region EA1 and has a surface substantially parallel to the surface of the substrate 111. The second region 126b extends from the first region 126a and has a surface at a predetermined angle relative to the substrate 111. Additionally, for example, the second region 126b of the cathode 126 may correspond to the lateral portion of the protrusion 116b. Therefore, the second region 126b of the cathode 126 may be referred to as the lateral portion of the cathode 126.

[0190] The second region 126b of the cathode 126 can be located to the left or right of the main light-emitting region EA1.

[0191] Furthermore, the cathode 126 may also include a third region 126c extending from the second region 126b in a direction toward the adjacent sub-pixel.

[0192] For example, the third region 126c can be located above the embankment 117.

[0193] For example, the third region 126c may be substantially parallel to the surface of the substrate 111. However, this disclosure is not limited thereto.

[0194] In a first embodiment of this disclosure, the second region 126b of the cathode 126 may have a side mirror shape and constitute a side mirror (SM) structure. The SM structure of the cathode 126 may be configured in the protruding region PA. For example, the SM structure of the cathode 126 may form a reflective region EA2. For example, the reflective region EA2 may have a shape formed along the contour of the main light-emitting region EA1. The reflective region EA2 may have an uninterrupted frame shape or an interrupted frame shape. The interrupted frame shape may be a shape that surrounds the contour of the main light-emitting region EA1 and has an interruption in the middle therein.

[0195] The second region 126b of the cathode 126 of the first embodiment of this disclosure can be disposed on the lateral portion of the protrusion 116b along the shape of the lateral portion of the protrusion 116b. In this case, the second region 126b of the cathode 126 disposed on the lateral portion of the protrusion 116b can gradually taper at an angle of approximately 30 to 60 degrees. However, this disclosure is not limited thereto. The second region 126b of the cathode 126, made of a metallic material with high reflectivity, can be used as a side mirror (SM). Therefore, in addition to the main light-emitting region EA1, the light-emitting region according to the first embodiment of this disclosure may also include a reflective region EA2 provided by the SM structure. For example, the reflective region EA2 can be formed between the main light-emitting region EA1 and the first non-light-emitting region NEA1 corresponding to the first region 122a and the second region 122b of the anode 122. At the same time, the second non-light-emitting region NEA2 can be formed between the reflective region EA2 and the main light-emitting region EA1.

[0196] In a first embodiment of this disclosure, the SM structure disposed in the protruding region PA forms a reflective region EA2. A portion of the light emitted from the light-emitting element 120 is reflected by the SM structure from the second region 126b of the cathode 126, forming a reflective region EA2 with a frame shape (see [link]). Figure 5 (The dashed arrow in the image). Therefore, light extraction efficiency can be improved.

[0197] As described above, the light extraction efficiency is improved by the side mirror structure (i.e., the second region 126b of the cathode 126). Specifically, light trapped in both the substrate mode and the waveguide mode can be extracted through the second region 126b of the cathode 126. However, because the angle of the second region 126b of the cathode 126 is smaller than that of the second region 126b, the light extraction efficiency is improved. Figure 5 In the case of a light path with a light emission distribution angle of θ, light cannot be extracted, so the second region 126b of the cathode 126 gradually tapers at an angle of up to 45 degrees. As described above, light with an angle equal to or less than the maximum taper angle of the second region 126b of the cathode 126 cannot be extracted. In particular, because blue light has a higher absorption rate than red or green light, the light extraction efficiency can be further reduced.

[0198] Therefore, in the first embodiment of this disclosure, regions 122a and 122b differ in thickness of the anode 122, thereby increasing the light emission distribution of the extracted light. It can be seen that as the thickness of the second region 122b at the edge of the anode 122 decreases, the light emission distribution of the extracted light further widens (see...). Figure 5 (See arrows ① and ② in the text). Therefore, light in the optical path that does not collide with the cathode 126b in the prior art can be extracted by reflection from the second region 126b. (Refer to...) Figure 5Blue light is described as an example. It can be seen that the blue light beam emitted from the relatively thin second region 126b of the anode 122 (arrow ②) forms a wider light emission distribution than the blue light beam emitted from the relatively thick first region 122a of the anode 122 (arrow ①). Therefore, brightness can be increased. In this case, with the increase in brightness, power consumption can be reduced, which can reduce the amount of fossil fuels used to generate power and reduce greenhouse gas emissions, thus achieving ESG (Environmental, Social, and Governmental) goals.

[0199] The microcavity is designed to emit the maximum amount of forward light when forming the light-emitting element 120. By modifying the microcavity design, the forward-propagating light beam is laterally expanded according to the prior art design, allowing the amount of lateral light emission to be relatively greater than the amount of forward light emission. Therefore, when the thickness of the second region 122b at the edge of the anode 122 is reduced based on the above configuration, the cavity can be altered, and the light emission distribution can be broadened. The path of light can be altered by refraction, reflection, etc., as it passes through several layers until it is emitted in the light-emitting element 120 and exits to the outside. Therefore, in the case of the light-emitting element 120, the microcavity can be designed to achieve the maximum amount of forward light emission while maintaining the same amount of light emission. In this respect, by reducing the thickness of the anode 122 in the corresponding design, the amount of forward light emission is relatively reduced by the modified microcavity, while the amount of lateral light emission is increased. Therefore, by reducing the thickness of the second region 122b at the edge of the anode 122 in the prior art design, the light emission distribution can be broadened, and the side mirror structure of the cathode 126 can be used more rationally.

[0200] For reference, the electroluminescence spectrum is configured as the sum of the emission spectrum and the photoluminescence spectrum. The emission spectrum refers to the amount of light with various wavelengths emitted from a particular material or device.

[0201] In addition, photoluminescence spectrum refers to the spectrum of light emitted by a material after absorbing light (usually UV rays or visible light). Electroluminescence spectrum refers to the spectrum of light emitted when an electroluminescent display device receives an electric current.

[0202] Analysis of the electroluminescence spectrum showed that, compared to the forward spectrum at an incident angle of 0 degrees, the emission spectrum varied according to the wavelength at the viewing angle (i.e., incident angles of 45 degrees and 60 degrees).

[0203] Therefore, it can be seen that the light emission distribution can be broadened from various perspectives.

[0204] The encapsulation layer can be located above the light-emitting element 120.

[0205] In this case, the encapsulation layer can have a single-layer structure or a multi-layer structure. For example, the encapsulation layer may include a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer.

[0206] For example, the first and third encapsulation layers can both be made of inorganic membranes, and the second encapsulation layer can be made of an organic membrane. For example, among the first, second, and third encapsulation layers, the second encapsulation layer can be the thickest and used as a planarization membrane.

[0207] The first encapsulation layer can be made of an inorganic insulating material that can withstand low-temperature deposition. For example, the first encapsulation layer can be made of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), aluminum oxide (Al2O3), etc.

[0208] The second wrapper can have a smaller area than the first wrapper. In this case, the second wrapper can be formed to expose the two opposite ends of the first wrapper.

[0209] Additionally, for example, the second encapsulation layer can be made of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon carbide (SiOC). Furthermore, for example, the second encapsulation layer can also be formed using an inkjet printing method. However, this disclosure is not limited thereto.

[0210] A third encapsulation layer can be formed to cover the top and side surfaces of the first and second encapsulation layers.

[0211] For example, the third encapsulation layer can minimize or prevent external moisture or oxygen from penetrating into the first and second encapsulation layers. Furthermore, the third encapsulation layer can be made of inorganic insulating materials such as silicon oxide (SiOx), silicon oxynitride (SiON), aluminum oxide (Al2O3), or silicon nitride (SiNx).

[0212] Meanwhile, in the first embodiment of this disclosure, when the height of the protruding portion of the second planarization film is 1.0 μm, the length of the second region of the anode can be at least 0.732 μm to reflect all light beams with an incident angle of 60 degrees. This configuration will be described in detail below.

[0213] Figure 6A and Figure 6B This is a graph showing the electroluminescence spectrum of the comparative example.

[0214] Figure 7A and Figure 7B This is a graph showing the electroluminescence spectrum of Experimental Example 1.

[0215] Figure 8A and Figure 8B This is a graph showing the electroluminescence spectrum of Experimental Example 2.

[0216] Figure 9A and Figure 9B This is a graph showing the electroluminescence spectrum of Experimental Example 3.

[0217] Figure 10A and Figure 10B This is a graph showing the electroluminescence spectrum of Experimental Example 4.

[0218] Figure 11 This is a table showing the intensity of the electroluminescence spectrum relative to the incident angle of the comparative examples and experimental examples 1 to 4.

[0219] from Figure 6A , Figures 6B to 10A and Figure 10B The results shown can maximize efficiency and brightness by allowing the side mirror structure of the cathode to reflect a greater amount of light through the protrusions of the second planarization film.

[0220] Figure 6A and Figure 6B This shows that when the height of the protrusion of the second planarization film is 1.0 μm and the thickness of the anode is... However, there is no graph of the electroluminescence spectrum of the comparative example in the second region.

[0221] Figure 7A , Figures 7B to 10A and Figure 10B This is a graph showing the electroluminescence spectra of Experimental Examples 1 to 4, where the height of the protruding portion of the second planarization film is 1.0 μm, and the first and second regions differ in thickness at the anode. Figure 7A , Figures 7B to 10A and Figure 10B In Experiments 1 to 4, the thickness of the first region is constant. Furthermore, the thickness of the second region can be less than the thickness of the first region. In addition, in Experiments 1-4, the length of the second region can be 0.732 μm.

[0222] exist Figure 7A , Figures 7B to 10A and Figure 10B In the second planarization film, the protruding portion can gradually taper at 45 degrees, the refractive index of the second planarization film can be about 1.57, and the refractive index of the organic layer can be about 1.9 to 2.1.

[0223] Figure 7A and Figure 7B This indicates that when the thickness of the second region of the anode is The electroluminescence spectrum of Experiment Example 1 is shown in the figure.

[0224] Figure 8A and Figure 8B This indicates that when the thickness of the second region of the anode is The electroluminescence spectrum of Experiment Example 2 is shown in the figure.

[0225] Figure 9A and Figure 9B This indicates that when the thickness of the second region of the anode is The electroluminescence spectrum of Experiment Example 3 is shown in the figure.

[0226] Figure 10A and Figure 10B This indicates that when the thickness of the second region of the anode is The electroluminescence spectrum of Experiment Example 4 is shown in the figure.

[0227] Figure 7A , Figure 8A , Figure 9A and Figure 10A This is a graph showing the electroluminescence spectra at incident angles of 0 degrees, 45 degrees, and 60 degrees relative to wavelength.

[0228] in addition, Figure 7B , Figure 8B , Figure 9B and Figure 10B This demonstrates how to utilize the light intensity in the YG region (556 nm) to... Figure 7A , Figure 8A , Figure 9A and Figure 10A The electroluminescence spectrum was obtained by normalizing the electroluminescence spectrum of the graph to 100%.

[0229] It can be seen that, Figure 6A and Figure 6B In the comparative example, the intensity of the electroluminescence spectrum has values ​​of 100%, 60%, and 42% at incident angles of 0°, 45°, and 60°, respectively. That is, it can be seen that the intensity of the electroluminescence spectrum decreases as the incident angle increases to 45° and 60°, compared to an incident angle of 0°. In this case, the intensity of the electroluminescence spectrum can be referred to as a relative value when the incident angle of 0° is 100%.

[0230] It can be seen that, Figure 7A and Figure 7B In Experimental Example 1, the intensity of the electroluminescence spectrum had values ​​of 100%, 68%, and 52% at incident angles of 0°, 45°, and 60°, respectively. It can be seen that, compared to the comparative example, the degree of intensity reduction in the electroluminescence spectrum was less pronounced at incident angles of 45° and 60°.

[0231] It can be seen that, Figure 8A and Figure 8BIn Experimental Example 2, the intensity of the electroluminescence spectrum had values ​​of 100%, 91%, and 65% at incident angles of 0°, 45°, and 60°, respectively. It can be seen that, compared to the comparative example, the decrease in the intensity of the electroluminescence spectrum was further reduced at incident angles of 45° and 60°. Therefore, in Experimental Example 2, the intensity of the electroluminescence spectrum remained above 90% at an incident angle of 45°.

[0232] In addition, it can be seen that, Figure 9A and Figure 9B In Experimental Example 3, the intensity of the electroluminescence spectrum had values ​​of 100%, 99%, and 79% at incident angles of 0°, 45°, and 60°, respectively. It can be seen that, compared to the comparative example, the decrease in intensity of the electroluminescence spectrum was further reduced at incident angles of 45° and 60°. Therefore, in Experimental Example 3, the intensity of the electroluminescence spectrum remained at 98% or greater at an incident angle of 45°, and even at an incident angle of 60°, the intensity was close to 80%.

[0233] In addition, it can be seen that, Figure 10A and Figure 10B In Experimental Example 4, the intensity of the electroluminescence spectrum had values ​​of 100%, 123%, and 74% at incident angles of 0°, 45°, and 60°, respectively. It can be seen that, compared to the comparative example, the intensity of the electroluminescence spectrum increased at incident angles of 45° and 60°. However, it can be seen that, in Experimental Example 4, compared to Experimental Example 3, the intensity of the electroluminescence spectrum decreased to 74% at an incident angle of 60°. Therefore, it is evident that Experimental Example 3 yielded the best results, maximizing both efficiency and brightness.

[0234] according to Figure 6A , Figures 6B to 10A , Figure 10B and Figure 11 The results can be used to identify changes in light emission distribution based on the intensity of the electroluminescence spectrum corresponding to a viewing angle of 0 to 60 degrees. In particular, it can be determined that the light emission distribution increases as the intensity of the electroluminescence spectrum corresponding to a viewing angle of 60 degrees increases.

[0235] It can be seen that, Figure 6A and Figure 6B In the comparative example, the intensity of the electroluminescence spectrum corresponding to a 60-degree viewing angle is 42% compared to a frontal view. Furthermore, it can be seen that... Figure 7A and Figure 7B In Experiment Example 1, the intensity of the electroluminescence spectrum corresponding to a 60-degree viewing angle was 52% compared to a frontal view. Furthermore, it can be seen that... Figure 8A and Figure 8B In the case of Experiment Example 2, the intensity of the electroluminescence spectrum corresponding to a 60-degree viewing angle was 65% compared to viewing from the front.

[0236] In addition, it can be seen that, Figure 9A and Figure 9B In Experiment Example 3, the intensity of the electroluminescence spectrum corresponding to a 60-degree viewing angle was 79% compared to a frontal view. Furthermore, it can be seen that... Figure 10A and Figure 10B In the case of Experiment Example 4, the intensity of the electroluminescence spectrum corresponding to a 60-degree viewing angle is 74% compared to viewing from the front.

[0237] As described above, it can be seen that at a viewing angle of 60 degrees, the intensity of the electroluminescence spectrum in Experimental Example 3 increases to 79% compared to 42% in the Comparative Example. Furthermore, it can be seen that approximately 37% of the light emission distribution of the beam increases to 60 degrees or greater. As mentioned above, the beam with the increased light emission distribution further utilizes the side mirror structure of the cathode, which contributes to the additional light emission.

[0238] As described above, it can be seen that as the thickness of the second region of the anode becomes smaller than the thickness of the first region, the degree of decrease in the intensity of the electroluminescence spectrum decreases, but when the thickness of the first region is... When, if the thickness of the second region is from Reduce to A reversal phenomenon occurs. Therefore, in this disclosure, when the thickness of the first region of the anode is... At that time, the thickness of the second region can have to The value. For example, in this disclosure, the thickness of the second region of the anode can have a value of 64% to 91% of the thickness of the first region.

[0239] Figure 12 This is a view showing the simulation results of light emission based on the incident angle of the light emission.

[0240] Figure 12 This illustrates the directionality of a beam with an incident angle of 60 degrees, emitted in a downward direction. A directional beam can propagate parallel to one direction in both layers.

[0241] refer to Figure 12When the protrusion of the second planarization film tapers at 45 degrees and the height of the protrusion is 1.0 μm, all beams with an incident angle of 60 degrees or less can be reflected by the side mirror structure of the cathode. Therefore, in this case, the length of the second region of the anode can have a value of at most 0.732 μm. If all beams with an incident angle of 75 degrees or less are used for the side mirror structure of the cathode, the length of the second region of the anode can have a value of at least 2.732 μm.

[0242] When the height of the protrusion is 1.5 μm under the same simulation, the length of the second region of the anode can have a value of at least 2.674 μm so that all beams with an incident angle of 60 degrees or less can be used for the side mirror structure of the cathode. If all beams with an incident angle of 75 degrees or less are used for the side mirror structure of the cathode, the length of the second region of the anode can have a value of at least 4.590 μm.

[0243] Figures 13A to 13E The manufacturing process is shown in sequence. Figure 5 A cross-sectional view of a portion of the process of displaying the panel.

[0244] refer to Figure 13A Buffer layer 112, such as multiple buffer layers or lower buffer layers, can be formed on the substrate 111.

[0245] Various signal lines, such as data lines DL, reference voltage lines REF, or common voltage lines, can be formed on substrate 111.

[0246] The thin-film driving transistor 130 can be formed above the buffer layer 112.

[0247] A protective film may be formed over the thin-film driving transistor 130. In some cases, a protective film may not be required.

[0248] Planarization films 115 and 116 can be formed on the protective film.

[0249] Planarization films 115 and 116 may have a multilayer structure comprising at least two layers. For example, planarization films 115 and 116 may comprise a first planarization film 115 and a second planarization film 116. However, this disclosure is not limited thereto.

[0250] For example, the connecting electrode 135 can be formed on the first planarization film 115 and electrically connect the thin-film driving transistor 130 and the light-emitting element 120.

[0251] The color filter CF can be formed on the first planarization film 115.

[0252] The second planarization film 116 can be formed above the first planarization film 115 and the color filter CF.

[0253] In this case, the second planarization film 116 may include a bottom surface layer 116a disposed on the entire substrate 111, and a protrusion 116b disposed on the bottom surface layer 116a and protruding at a position corresponding to the main light-emitting region EA1 of the sub-pixel.

[0254] For example, the protruding portion 116b may include a top surface, a lateral portion, and a bottom surface.

[0255] The bottom surface layer 116a and the protruding portion 116b of the second planarization film 116 can be made of the same material and integrated. However, this disclosure is not limited thereto. The bottom surface layer 116a and the protruding portion 116b can be made of different materials and formed by different processes.

[0256] For example, the protruding portion 116b may have a height of about 1.0 μm to 1.5 μm. However, this disclosure is not limited thereto.

[0257] For example, the lateral portion of the protruding portion 116b may taper gradually at approximately 45 degrees to form the side mirror structure of the cathode 126. However, this disclosure is not limited thereto.

[0258] Subsequently, refer to Figure 13B The first region 122a of the anode 122 can be formed on the protruding portion 116b of the second planarization film 116 by a mask process (photolithography). In addition, a third region 122c extending from the first region 122a to the top surface of the bottom surface layer 116a of the second planarization film 116 can be formed by the same mask process.

[0259] The first region 122a of the anode 122 may be disposed on a portion of the top surface of the protrusion 116b of the second planarization film 116 and has a surface substantially parallel to the surface of the substrate 111.

[0260] The third region 122c of the anode 122 can extend from the lower edge of the first region 122a to the lateral portion of the protrusion 116b and the top surface of the bottom surface layer 116a.

[0261] For example, the third region 122c of the anode 122 can be spaced apart from the adjacent third region 122c by a predetermined distance in order to suppress short circuits between adjacent sub-pixels.

[0262] In this configuration, the second planarization film 116 may include at least one contact hole spaced apart from the protruding region PA. The drain electrode 133 of the thin-film drive transistor 130 and the third region 122c of the anode 122 may be electrically connected through the contact hole.

[0263] Subsequently, refer to Figure 13CThe second region 122b can be formed on the left or right side of the first region 122a by a mask process (photolithography process).

[0264] For example, the first region 122a can be formed on a portion of the top surface of the protrusion 116b of the second planarization film 116 by depositing and patterning a conductive film over the entire substrate 111 to cover the first region 122a. Simultaneously, the second region 122b can be formed on another portion of the top surface of the protrusion 116b.

[0265] That is, the second region 122b can be disposed on another part of the top surface of the protrusion 116b and has a surface that is substantially parallel to the surface of the substrate 111.

[0266] The second region 122b may be a partial left or right region of the anode 122 disposed on the top surface of the protrusion 116b, and the first region 122a may be a region excluding the partial left or right region of the anode 122 disposed on the top surface of the protrusion 116b. For example, the second region 122b may be part of the left or right edge of the anode 122.

[0267] Therefore, the first region 122a and the second region 122b can have different thicknesses. The first region 122a can have a greater thickness than the second region 122b. Furthermore, the third region 122c can have a thickness substantially the same as the first region 122a.

[0268] The anode 122 formed as described above can be configured to correspond to each of a plurality of sub-pixels. That is, the anode 122 can be configured to be divided for multiple sub-pixels. The anode 122 can be made of a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). The anode 122 can have a single-layer structure or a multi-layer structure. When materials with different refractive indices are used, a multi-layer structure can adjust the light distribution by using the refractive index difference. For example, in a multi-layer structure, the lower layer can have a higher refractive index than the upper layer.

[0269] Subsequently, refer to Figure 13D A embankment 117 can be formed on the second planarization film 116.

[0270] The portion of the embankment 117 corresponding to the main light-emitting region EA1 of the sub-pixel can be opened. That is, the embankment 117 can be formed outside the main light-emitting region EA1.

[0271] Furthermore, in the first embodiment of this disclosure, portions of the embankment 117 are differently disposed on the left, right, upper, and lower sides of the main light-emitting region EA1. However, this disclosure is not limited thereto. For example, on the left and right sides of the main light-emitting region EA1, portions of the embankment 117 corresponding to the main light-emitting region EA1, the second non-light-emitting region NEA1, and the reflective region EA2 can be opened. Therefore, on the left and right sides of the main light-emitting region EA1, the embankment 117 can be spaced apart from the protrusion 116b at a predetermined distance. Conversely, on the upper and lower sides of the main light-emitting region EA1, only portions of the embankment 117 corresponding to the main light-emitting region EA1 can be opened. Therefore, on the upper and lower sides of the main light-emitting region EA1, the embankment 117 can be adjacent to or adjacent to the protrusion 116b, and the third region 122c is located therebetween (see...). Figure 4 ).

[0272] Subsequently, refer to Figure 13E The light-emitting element 120 can be formed by depositing an organic layer 124 on the anode 122 and a cathode 126.

[0273] For example, the cathode 126 of the first embodiment of this disclosure may include a first region 126a disposed in the main light-emitting region EA1 and having a surface substantially parallel to the surface of the substrate 111, and a second region 126b extending from the first region 126a and having a surface having a predetermined angle relative to the substrate 111.

[0274] The second region 126b of the cathode 126 can be located to the left or right of the main light-emitting region EA1.

[0275] Subsequently, although not shown, an encapsulation layer may be formed over the light-emitting element 120.

[0276] Furthermore, the anode of this disclosure can have two regions, namely, a first region and a second region with different thicknesses. However, this disclosure is not limited thereto. The three regions, including the first region, the second first region, and the second second region, can have different thicknesses. This configuration will be described in detail with reference to a second embodiment of this disclosure.

[0277] Figure 14 This is a cross-sectional view showing a display panel according to a second embodiment of the present disclosure.

[0278] Apart from the fact that the three regions (i.e., the first region, the second first region, and the second second region) differ in the thickness of the anode, Figure 14 The second embodiment of this disclosure is structurally similar to the one described above. Figures 3 to 4 The first embodiment is substantially the same. Therefore, repeated descriptions of the same parts will be omitted. The same reference numerals are used for the same parts. In the following, reference will be made to... Figures 1 to 4The parts are described by the same reference numerals.

[0279] refer to Figure 14 The first planarization film 115 can be disposed above the substrate 111.

[0280] The color filter CF can be set on the first planarization film 115.

[0281] The second planarization film 116 can be disposed above the first planarization film 115 and the color filter CF.

[0282] In this case, the second planarization film 116 may include a bottom surface layer 116a disposed on the entire substrate 111, and a protruding portion 116b disposed on the bottom surface layer 116a and protruding at a position corresponding to the main light-emitting region EA1 of the sub-pixel.

[0283] For example, the protruding portion 116b may include a top surface, a lateral portion, and a bottom surface.

[0284] The bottom surface layer 116a and the protrusion 116b of the second planarization film 116 can be made of the same material and integrated. However, this disclosure is not limited thereto. The bottom surface layer 116a and the protrusion 116b can be made of different materials and configured by different processes.

[0285] For example, the protruding portion 116b may have a height of about 1.0 μm to 1.5 μm. However, this disclosure is not limited thereto.

[0286] For example, the lateral portion of the protruding portion 116b may taper gradually at approximately 45 degrees to form the side mirror structure of the cathode 226. However, this disclosure is not limited thereto.

[0287] For example, the anode 222 may be disposed on a portion of the top surface of the bottom surface layer 116a of the second planarization film 116 and on the top surface and lateral portion of the protrusion 116b.

[0288] The anode 222 may include a first region 222a disposed on a portion of the top surface of the protrusion 116b of the second planarization film 116 and having a surface substantially parallel to the surface of the substrate 111, and a second first region 222b-1 and a second second region 222b-2 disposed on another portion of the top surface of the protrusion 116b and having a surface substantially parallel to the surface of the substrate 111. However, this disclosure is not limited thereto. A plurality of second regions may be disposed on another portion of the top surface of the protrusion 116b.

[0289] According to the second embodiment of this disclosure, the second first region 222b-1 and the second second region 222b-2 may be partial left and right regions of the anode 222 disposed on the top surface of the protrusion 116b, and the first region 222a may be a region excluding the partial left or right regions of the anode 222 disposed on the top surface of the protrusion 116b. The second first region 222b-1 and the second second region 222b-2 may be portions of the left and right edges of the anode 222. For example, the second second region 222b-2 may be located outside the second first region 222b-1.

[0290] In the second embodiment of this disclosure, the first region 222a, the second first region 222b-1, and the second second region 222b-2 may have different thicknesses to broaden the light emission distribution of the extracted light. The first region 222a may have a greater thickness than the second first region 222b-1 and the second second region 222b-2. Furthermore, the second first region 222b-1 may have a greater thickness than the second second region 222b-2. For example, when the height of the protrusion 116b of the second planarization film 116 is 1.0 μm, the total length of the second first region 222b-1 and the second second region 222b-2 may be at least 0.732 μm to reflect all light beams with an incident angle of 60 degrees. Therefore, light beams in the optical path that do not collide with the side mirror structure of the cathode 226 can be extracted by reflection from the side mirror structure of the cathode 226.

[0291] Furthermore, the anode 222 may include a third region 222c extending from the first region 222a to the top surface of the bottom surface layer 116a of the second planarization film 116. For example, in a plan view, the third region 222c may be located at the lower edge of the main light-emitting region EA1. However, this disclosure is not limited thereto.

[0292] For example, the third region 222c may have substantially the same thickness as the first region 222a, and the second first region 222b-1 may have a greater thickness than the second second region 222b-2. However, this disclosure is not limited thereto.

[0293] The embankment 117 can be set on the second planarization membrane 116.

[0294] The organic layer 224 and the cathode 226 can be disposed on the anode 222.

[0295] The anode 222, the organic layer 224, and the cathode 226 can constitute the light-emitting element 220.

[0296] For example, the cathode 226 of the second embodiment of this disclosure may include a first region 226a and a second region 226b. The first region 226a is disposed in the main light-emitting region EA1 and has a surface that is substantially parallel to the surface of the substrate 111. The second region 226b extends from the first region 226a and has a surface that has a predetermined angle relative to the substrate 111.

[0297] The second region 226b of the cathode 226 can be disposed to the left or right of the main light-emitting region EA1. In a second embodiment of this disclosure, the second region 226b of the cathode 226 can have a side mirror shape and form a side mirror (SM) structure.

[0298] The encapsulation layer can be placed above the light-emitting element 220.

[0299] As described above, in the second embodiment of this disclosure, a second first region 222b-1 and a second second region 222b-2 having successively smaller thicknesses than the first region 222a are disposed at the left and right edges of the first region 222a of the anode 222, and the thickness of the anode 222 is more finely divided, so that the light emission distribution can be further broadened.

[0300] Exemplary embodiments of this disclosure can also be described as follows:

[0301] According to one aspect of this disclosure, a display device is provided. The display device includes: a planarization film disposed above a substrate and having a protruding portion; an anode disposed on the top surface of the protruding portion of the planarization film and including at least a first region and a second region with different thicknesses; an organic layer disposed on the anode; and a cathode disposed on the organic layer, corresponding to the top surface and lateral portion of the protruding portion.

[0302] The planarization film may include a bottom surface layer and protrusions disposed on the bottom surface layer, the protrusions being positioned to correspond to the main light-emitting area of ​​the sub-pixel.

[0303] The top surface of the protrusion can be positioned at the top of the planarization film, and the top surface of the protrusion can have a polygonal shape, a circular shape, or an elliptical shape in the planar view.

[0304] The protrusion may further include a transverse portion extending from the top surface of the protrusion to the side surface, the protrusion may have a height of 1.0 μm to 1.5 μm, and the length of the second region may be at least 70% of the height of the protrusion.

[0305] The anode can be located on a portion of the top surface of the bottom surface layer, as well as on the top surface and lateral portion of the protruding portion.

[0306] The first region of the anode may be disposed on a portion of the top surface of the protrusion, and the second region of the anode may be disposed on another portion of the top surface of the protrusion.

[0307] The second area can be set to the left or right of the first area.

[0308] The first region can have a greater thickness than the second region.

[0309] The anode may also include a third region extending from the first region to the top surface of the bottom surface layer, and the third region may be located at the lower edge of the main light-emitting region in a plan view.

[0310] The third region can have the same thickness as the first region.

[0311] The display device may also include a dam provided on the top surface of the planarization film, excluding the protruding portion.

[0312] A portion of the embankment corresponding to the main luminescent area, the second non-luminescent area, and the reflective area may be opened to the left or right of the main luminescent area, and only the portion of the embankment corresponding to the main luminescent area may be opened above or below the main luminescent area.

[0313] The reflective area can be positioned to surround the main luminous area without overlapping it.

[0314] The organic layer can be disposed on the top surface of the first region and the second region, a portion of the top surface and the lateral portion of the protrusion, and the top surface and the lateral portion of the embankment on the left or right side of the main light-emitting region. The organic layer can also be disposed on the top surface of the first region and the top surface of the embankment on the upper or lower side of the main light-emitting region.

[0315] The cathode may include a first region disposed in the main light-emitting region; and a second region extending from the first region of the cathode and corresponding to a lateral portion of the protrusion.

[0316] The second region of the cathode can be located to the left or right of the main light-emitting region, forming a reflective region.

[0317] The second region may include a second first region and a second second region with different thicknesses.

[0318] The second region can be located outside the second region.

[0319] The first region may have a greater thickness than the second first region and the second second region, and the second first region may have a greater thickness than the second second region.

[0320] The thickness of the second region of the anode can be 64% to 91% of the thickness of the first region.

[0321] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be construed as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: A planarization film, wherein the planarization film is disposed above a substrate and has a protruding portion; An anode is disposed on the top surface of the protruding portion of the planarization film and includes at least a first region and a second region with different thicknesses. An organic layer is disposed on the anode, corresponding to the top and side surfaces of the protruding portion; as well as A cathode is disposed on the organic layer, corresponding to the top surface and the side surface of the protruding portion.

2. The display device according to claim 1, wherein, The planarization film includes: Bottom surface layer; and The protruding portion disposed on the bottom surface layer protrudes to correspond to the main light-emitting area of ​​the sub-pixel.

3. The display device according to claim 1, wherein, The top surface of the protruding portion is located at the uppermost part of the planarization film, and the top surface of the protruding portion has a polygonal shape, a circular shape, or an elliptical shape in a plan view.

4. The display device according to claim 2, wherein, The protruding portion also includes a transverse portion extending from the top surface to the side surface of the protruding portion. The protruding portion has a height of 1.0 μm to 1.5 μm, and the length of the second region is at least 70% of the height of the protruding portion.

5. The display device according to claim 4, wherein, The lateral portion of the protruding part gradually tapers at a predetermined angle.

6. The display device according to claim 2, wherein, The anode is disposed on a portion of the top surface of the bottom surface layer and on the top surface of the protruding portion and the transverse portion.

7. The display device according to claim 2, wherein, The first region of the anode is disposed on a portion of the top surface of the protrusion, and the second region of the anode is disposed on another portion of the top surface of the protrusion.

8. The display device according to claim 7, wherein, The second region is located to the left or right of the first region.

9. The display device according to claim 8, wherein, The first region has a greater thickness than the second region.

10. The display device according to claim 9, wherein, The anode further includes a third region extending from the first region to the top surface of the bottom surface layer, and the third region is disposed at the lower edge of the main light-emitting region in a plan view, wherein the third region has the same thickness as the first region.

11. The display device according to claim 4, further comprising: A dam portion, which is disposed on the top surface of the planarization membrane, excluding the protruding portion.

12. The display device according to claim 1, wherein, On the left or right side of the main luminescent area, the portion of the embankment corresponding to the main luminescent area, the second non-luminescent area, and the reflective area is opened, and on the upper or lower side of the main luminescent area, only the portion of the embankment corresponding to the main luminescent area is opened.

13. The display device according to claim 12, wherein, The reflective area is positioned to surround the main luminescent area without overlapping it.

14. The display device according to claim 2, wherein, The organic layer is disposed on the top surface of the first and second regions, a portion of the top surface and the lateral portion of the protrusion, and the top surface and lateral portion of the embankment, on the left or right side of the main light-emitting region. The organic layer is disposed on the top surface of the first region and the top surface of the embankment, either above or below the main light-emitting region.

15. The display device according to claim 12, wherein, The cathode includes: A first region, wherein the first region is disposed in the main light-emitting region; and The second region extends from the first region of the cathode and corresponds to the lateral portion of the protrusion.

16. The display device according to claim 15, wherein, The first region of the cathode has a surface that is substantially parallel to the surface of the substrate, and the second region of the cathode has a surface that has a predetermined angle relative to the substrate.

17. The display device according to claim 15, wherein, The second region of the cathode is disposed to the left or right of the main light-emitting region and forms the reflective region.

18. The display device according to claim 1, wherein, The second region includes a second first region and a second second region with different thicknesses, wherein the second second region is located outside the second first region.

19. The display device according to claim 18, wherein, The first region has a greater thickness than the second first region and the second second region, and the second first region has a greater thickness than the second second region.

20. The display device according to claim 1, wherein, The thickness of the second region of the anode is 64% to 91% of the thickness of the first region.

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