Wafer heat treatment apparatus and heat treatment method

Abstract

The application discloses a wafer heat treatment device and method, and belongs to the technical field of semiconductor manufacturing. The device comprises a degassing assembly and an annealing assembly. The degassing assembly comprises a reflective cover with a plane and inner and outer inclined reflective surfaces and a plurality of concentric ring-shaped lamp groups arranged below the reflective cover. The annealing assembly comprises first and second heating assemblies, a heat insulation member and a cooling assembly, which are arranged in a stack from top to bottom and the heating bodies of which are arranged in a cross pattern. The method uses the above device and comprises the following steps: after the wafer is sent into a processing area and vacuumized, the wafer lower surface is preheated by starting the annealing assembly, and the wafer upper surface is radiantly heated by starting the degassing assembly to complete degassing; after the wafer is coated and sent into again, the wafer is preheated by the degassing assembly and then lowered to the annealing assembly to perform contact annealing. The application improves heating uniformity and process efficiency through optimized assembly design and process integration.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology, specifically relating to a wafer thermal processing apparatus, particularly an integrated degassing and annealing apparatus and its usage method. Background Technology

[0002] In semiconductor manufacturing processes, the heat treatment before and after wafer coating is crucial to the quality of the film. Degassing is required before coating to remove moisture and impurities adsorbed on the wafer surface. Traditional degassing methods often employ multi-ring concentrically arranged ring lamps for radiant heating. However, due to the presence of inlet and outlet wires in the lamps themselves, and the unreasonable arrangement of these inlets among the rings, the wafer's heating uniformity is poor. Simultaneously, the reflector structure fails to effectively concentrate radiant energy, resulting in low thermal efficiency.

[0003] On the other hand, the annealing process after coating generally uses a heating plate for contact conduction heating. In order to improve temperature uniformity, the heating plate often needs to be designed with a complex single-layer heating element, which is not only difficult and costly to manufacture, but also still difficult to completely avoid heating "dead zones".

[0004] Furthermore, degassing and annealing processes are currently mostly completed in independent chambers (i.e., different equipment), which not only results in large equipment space and high material costs, but also breaks up the process flow and fails to fully utilize the complementary advantages of radiation heating (rapid, non-contact) and conduction heating (stable, uniform) in terms of process timing.

[0005] Therefore, there is an urgent need in the field to develop an integrated heat treatment device that provides uniform heating and high thermal efficiency in order to solve the aforementioned problems in the prior art. Summary of the Invention

[0006] To solve the above-mentioned technical problems, the present invention provides an integrated degassing and annealing device and its usage method.

[0007] The present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides a wafer heat treatment apparatus, including a degassing assembly and an annealing assembly. The degassing assembly includes a reflector and a ring lamp group located below the reflector. The ring lamp group includes a plurality of concentrically arranged ring lamp tubes. The reflector includes a planar reflective surface for reflecting upward radiation, an inwardly tilted reflective surface for reflecting outward radiation to the center region of the wafer, and an outwardly tilted reflective surface for reflecting inward radiation to the outer region of the wafer. The annealing assembly includes a first heating assembly, a second heating assembly, a heat insulation component, and a cooling assembly stacked sequentially from top to bottom. The first heating assembly contains a first heating element, and the second heating assembly contains a second heating element. The first heating element and the second heating element are arranged to intersect in their horizontal extension directions.

[0009] Furthermore, the degassing component and the annealing component are disposed in the same process chamber. The degassing component is fixedly installed on the top or upper side wall of the process chamber, and the annealing component is fixedly installed on the bottom of the process chamber. The degassing component is located directly above the annealing component.

[0010] Through the integrated design described above, a seamless connection between the degassing and annealing processes is achieved. The annealing assembly provides uniform bottom preheating for the degassing process, reducing wafer thermal stress; the degassing lamp assembly can rapidly preheat the wafer before annealing, shortening the process heating time. The synergistic effect of the two effectively avoids the risk of warpage or microcracks in the wafer caused by sudden temperature changes, while significantly improving overall process efficiency and equipment capacity.

[0011] Furthermore, the ring-shaped lamp assembly consists of four concentric ring-shaped lamp tubes, each with a radiation notch angle of θ1, θ2, θ3, and θ4, respectively. The total notch angle θ = θ1 + θ2 + θ3 + θ4, and the interval angle θ between the ends of each ring-shaped lamp tube is... m =(360°-θ) / 4, so that the gaps are evenly distributed in the circumferential direction.

[0012] Furthermore, let the diameter of the wafer be D0, and the diameters of the circles containing the centers of the four annular lamps from the inside out be D1, D2, D3, and D4, respectively, and satisfy D1≥1 / 4·D0, D2≥1 / 2·D0, D3≥3 / 4·D0, and D4≥D0.

[0013] Furthermore, the angle between the inwardly tilted reflecting surface and the vertical plane is the inward tilt angle β. in It satisfies the following relationship: ; Where R is the radius of the lamp tube, r ref Let r be the radius of the reflection point on the inner reflecting surface. ref = R - d in d in r is the displacement of the reflection point. t Let z be the target illumination radius. ref Let z be the height of the reflection point and z ref = H + h, where H is the distance from the lamp tube plane to the wafer, and h is the distance from the lamp tube to the reflective surface.

[0014] Furthermore, the angle between the outwardly tilted reflecting surface and the vertical plane is the outward tilt angle β.out It satisfies the following relationship: ; Among them, R in R is the inner radius of the lamp tube and in = R - 5 mm, r ref Let r be the radius of the reflection point on the outer reflecting surface. ref =R + d out d out This represents the amount of outward displacement of the reflection point.

[0015] Furthermore, the ring-shaped light assembly includes four ring-shaped light tubes, corresponding to each ring-shaped light tube from the inside out, and the inclination angle β in The outward tilt angles are 25°, 20°, 15°, and 10°, respectively. out The angles are 40°, 35°, 30°, and 25° respectively.

[0016] Furthermore, the reflector is made of aluminum or aluminum alloy with a thickness of 0.8-1 mm, and the surface of the reflector is coated with an infrared high reflectivity coating with a reflectivity greater than 90%.

[0017] Furthermore, the cooling assembly is provided with a cooling pipe, one end of which is connected to a cooling water inlet and the other end of which is connected to a cooling water outlet.

[0018] Furthermore, the device also includes a transfer assembly for transferring wafers within the process cavity, a lifting pin assembly for raising and lowering wafers, a vacuum assembly for providing a vacuum environment, and a control assembly for coordinating and controlling the operation of the various assemblies.

[0019] In a second aspect, the present invention provides a method for performing wafer heat treatment using the above-described apparatus, comprising the following steps: Step 1: Send the wafer into the processing area and evacuate it; Step 2: Start the annealing assembly to preheat the lower surface of the wafer, and simultaneously start the degassing assembly to radiate heat the upper surface of the wafer to complete the degassing. At this point, the combined heating from top and bottom not only improves the degassing efficiency, but also reduces the risk of warping or microcracks in the wafer due to uneven heating by preheating the bottom.

[0020] Step 3: Remove the degassed wafer and perform coating. Then, send the coated wafer back into the processing area and evacuate it. Use the degassed component to preheat the wafer. Then, reduce the power of the degassed component and place the wafer on the heating surface of the annealing component for contact annealing. Step 4: After annealing, stop heating and allow the wafer to cool. Then remove the wafer.

[0021] Furthermore, in step one, the pressure within the treatment area is reduced to less than 5 × 10⁻⁶. -4 A vacuum level of Pa; in step three, the pressure in the processing area is evacuated to less than 5 × 10⁻⁶ Pa. -5 Vacuum degree in Pa.

[0022] Furthermore, in step two, the lower surface of the wafer is preheated to 100°C. 200°C, and heat the upper surface of the wafer to 200°C. Degassing is completed at 400℃.

[0023] Furthermore, in step three, the degassing assembly preheats the wafer to 100°C. The annealing assembly was preheated to 300°C before contacting the wafer at 200°C. 600℃.

[0024] Compared with the prior art, the beneficial technical effects of the present invention are: 1. Significantly improved thermal uniformity: By optimizing the arrangement of gaps in the incomplete rings of the ring lamp assembly, the missing angles are evenly distributed around the circumference. Combined with the simulation optimization design of multi-ring radial distribution (when D1≥1 / 4·D0, D2≥1 / 2·D0, D3≥3 / 4·D0, D4≥D0), and the precise angle design of the inner and outer double tilted reflective surfaces, the temperature uniformity of the wafer heating area is achieved within ±10℃, which greatly improves the process consistency of degassing and annealing.

[0025] 2. High thermal energy utilization: The reflector adopts an inward and outward composite reflective surface structure, which effectively reflects the radiation from the lamp tube to the target area from the outward and inward directions, respectively. At the same time, the top flat reflective structure reduces upward heat loss, thereby increasing the infrared radiation utilization rate to over 90% and reducing energy consumption.

[0026] 3. Reliable structure and easy maintenance: The annealing assembly adopts a double-layer cross heating element and modular cooling design, which solves the "dead zone" problem of traditional single-layer heating, making maintenance simple and highly stable. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the overall structure of the degassing and annealing integrated device provided in an embodiment of the present invention.

[0028] Figure 2 This is a cross-sectional view of the degassing and annealing integrated device provided in an embodiment of the present invention.

[0029] Figure 3 yes Figure 1 A schematic diagram of the degassing component.

[0030] Figure 4This is a schematic diagram of the notch arrangement and radial distribution of the ring-shaped lamp assembly of the present invention (the left figure shows the definition of angle and diameter, and the right figure shows the optimized notch distribution).

[0031] Figure 5 This is a simulation verification diagram of the wafer temperature uniformity when the ring lamp group of the present invention is distributed in a specific radial direction.

[0032] Figure 6 This is a schematic diagram (cross-section) of the reflector structure of the present invention.

[0033] Figure 7 This is a schematic diagram illustrating the principle of calculating the angles of the inner and outer reflective surfaces of the reflector in this invention.

[0034] Figure 8 This is a schematic diagram of the overall structure of the annealing assembly of the present invention.

[0035] Figure 9 This is a schematic diagram of the bottom structure of the annealing component of the present invention.

[0036] Figure 10 This is a schematic diagram of the structure of the first heating component and the second heating component in the annealing assembly of the present invention.

[0037] Figure 11 This is a schematic diagram of the structure of the first heating element in the annealing assembly of the present invention.

[0038] Figure 12 This is a schematic diagram of the structure of the second heating element in the annealing assembly of the present invention.

[0039] Figure 13 This is a schematic diagram of the cross-arrangement of heating elements in the annealing assembly of the present invention.

[0040] Figure 14 This is a schematic diagram of the transmission component of the present invention.

[0041] Figure 15 This is a schematic diagram of the structure of the ejector pin assembly of the present invention.

[0042] In the diagram, 1-Degassing assembly, 2-Annealing assembly, 3-Transfer assembly, 4-Ejector pin assembly, 5-Cavity assembly, 6-Vacuum assembly, 7-Control assembly, 11-Reflector, 12-Ring light, 21-First heating assembly, 22-Second heating assembly, 23-Heat insulation, 25-Cooling assembly, 26-Ejector pin hole, 27-Screw mounting hole, 31-Sample transfer arm, 32-Wafer, 41-Ejector pin, 43-Connecting rod, 44-Z-direction displacement platform, 210-Heating surface, 211-First heating inlet, 212-First heating outlet, 213-First temperature control component, 219-First heating element, 221-Second heating inlet, 222-Second heating outlet, 223-Second temperature control component, 229-Second heating element, 251-Cooling water inlet, 252-Cooling water outlet, 253-Cooling pipe, 271-Mounting screw. Detailed Implementation

[0043] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0044] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0045] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that is mutually exclusive with other embodiments.

[0046] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0047] The wafer heat treatment apparatus provided by the present invention includes a degassing component 1 and an annealing component 2 as its core components.

[0048] In a preferred integrated implementation, such as Figures 1 to 2 As shown, the degassing component 1 and the annealing component 2 are integrated in the same process chamber to form an integrated heat treatment device. This integrated device also includes a transfer component 3, an ejector pin component 4, a chamber component 5, a vacuum component 6, and a control component 7.

[0049] Specifically, in this integrated embodiment, the degassing assembly 1 is fixedly mounted to the top or upper sidewall of the process chamber via the peripheral flange or dedicated bracket of its reflector 11. The annealing assembly 2 is fixedly mounted to the bottom of the process chamber via a mounting structure (such as screw mounting holes 27) at the bottom of its cooling assembly 25. The degassing assembly 1 is located directly above the annealing assembly 2, and the two maintain a certain alignment gap in the vertical direction. This gap allows the ejector assembly 4 to lift and lower the wafer and the sample transfer arm 31 to transfer the wafer. Thus, the infrared radiation emitted by the ring lamp group 12 of the degassing assembly 1 can pass through this gap and illuminate the upper surface of the wafer 32 supported by the annealing assembly 2 or lifted by the ejector 41.

[0050] Degassing component 1, for example Figure 3 As shown, the device includes a reflector 11 and a ring-shaped lamp assembly (multiple ring lamps 12) disposed below it. The ring lamp assembly consists of four concentric ring lamps. Each ring lamp has a gap in its power supply wiring, with corresponding missing angles θ1, θ2, θ3, and θ4, respectively, and the total missing angle θ = θ1 + θ2 + θ3 + θ4. To minimize the impact of these gaps on the heated area (wafer) below, the ends of the four lamps are arranged at equal intervals on the circumference, with adjacent ends spaced apart by an angle θ. m = (360° - θ) / 4, as shown Figure 4 As shown in the figure on the right.

[0051] The radial distribution of the annular lamps must satisfy specific relationships: Let the diameter of the 32-inch wafer be D0, and the diameters of the circles containing the centers of the annular lamps from the inside out be D1, D2, D3, and D4, respectively. Their values ​​must satisfy: D1 ≥ 1 / 4·D0, D2 ≥ 1 / 2·D0, D3 ≥ 3 / 4·D0, D4 ≥ D0, etc. Figure 4 As shown in the left figure. Radiation simulation verification shows that this distribution can control the temperature uniformity of the wafer within ±10℃ at a 300℃ reference temperature. Figure 5 As shown.

[0052] The structure of reflector 11 is as follows Figure 6 , Figure 7 As shown, the reflector 11 has reflective surfaces with different orientations for the light emitted from the upper semicircular surface of the ring lamp 12, to handle upward, outward, and inward light respectively. Specifically, for upward-emitted light, the reflector 11 uses planar reflection; for outward and inward-emitted light, it uses oblique reflection. The inner reflective surface handles the light emitted outward from the ring lamp 12 and reflects it to the central region of the wafer; the outer reflective surface handles the light emitted inward from the ring lamp 12 and reflects it to the outer region of the wafer. The angle between the inner reflective surface and the vertical plane is denoted as β. in Let β be the angle between the external reflecting surface and the vertical plane. outIts geometric relationship is as follows Figure 7 As shown.

[0053] β in With β out The specific value can be determined according to the aforementioned method for calculating the tilt angle of the reflector. First, define the relevant geometric parameters: the radius of the ring lamp 12 is R, and its inner edge radius is R in Subtract the lamp wall thickness (e.g., 5 mm) from R. The target illumination radius is r. t , where represents the radius of the centerline of the illumination pattern formed by the reflected light on the wafer surface. The vertical distance from the lower surface of the ring lamp 12 to the wafer plane is H, and the vertical distance from the lower surface of the ring lamp 12 to the reflecting surface is h, where h is typically taken as 5. 10 mm. The height of the reflection point relative to the wafer plane is z. ref , satisfying z ref = H + h.

[0054] For the inner reflecting surface, the reflection point is located inside the outer edge of the ring lamp, and its inward displacement is d. in Then the radius of the reflection point r ref =R – d in According to the law of reflection, the inclination angle β in The general formula for calculation is:

[0055] For the external reflecting surface, the reflection point is located outside the outer edge of the ring lamp, and its outward displacement is d. out Then the radius of the reflection point r ref = R + d out According to the law of reflection, the outward tilt angle β out The general formula for calculation is:

[0056] As illustrated in one example: For a 300mm wafer, D1=80mm, D2=160mm, D3=230mm, D4=310mm; the lamp diameter is 10mm, and H=45mm. Based on design and manufacturing considerations, the reflective surface tilt angle is determined as follows: corresponding to the innermost to outermost annular lamp rings, β... in The angles are 25°, 20°, 15°, and 10° respectively; β out The angles are 40°, 35°, 30°, and 25° respectively. The reflector 11 is made of 0.8-1mm thick aluminum or aluminum alloy plate, which is easy to process; it is manufactured through processes such as integral spinning, punching, polishing, and coating; the surface is coated with an infrared high reflectivity coating with a reflectivity greater than 90%.

[0057] Annealing component 2, as Figure 8As shown, the annealing assembly 2 includes a first heating component 21, a second heating component 22, a heat insulation component 23, and a cooling component 25 arranged from top to bottom. These components are fixed to the cooling component 25 by mounting screws 271. The annealing assembly 2, through its dual heating and synergistic cooling structure design, achieves uniform and controllable heating of the wafer while effectively suppressing heat transfer to surrounding components.

[0058] Specifically, the first heating assembly 21 is located at the top and includes a heating surface 210 for directly facing the wafer, a first heating element 219 disposed inside, a first heating inlet line 211 and a first heating outlet line 212 electrically connected to the first heating element 219, and a first temperature control element 213 (e.g., a thermocouple) thermally coupled to the first heating element 219. The second heating assembly 22 is disposed below the first heating assembly 21 and includes a second heating element 229 disposed inside, a second heating inlet line 221 and a second heating outlet line 222 electrically connected to the second heating element 229, and a second temperature control element 223 thermally coupled to the second heating element 229. The first heating element 219 and the second heating element 229 are arranged in a cross-shaped spatial arrangement. For example, the orientation of the first heating element 219 and the orientation of the second heating element 229 form an angle in the horizontal plane, thereby forming a double-layer cross-shaped heating structure in the thickness direction. Figures 9 to 13 As shown in the figure. This arrangement can significantly improve the temperature uniformity of the heating surface and effectively overcome the problems of complex single-layer heating element structure and unavoidable heating "dead zones".

[0059] A heat insulation component 23 is disposed between the second heating component 22 and the cooling component 25 to reduce heat transfer downwards to the cooling component 25 and other lower structures, thereby improving heating efficiency and reducing heat loss. The cooling component 25 actively removes the heat conducted by the heat insulation component 23 and some of the parasitic heat generated during the operation of the heating component, preventing surrounding components from overheating. The cooling component 25 has a cooling pipe 253 inside, which has a cooling water inlet 251 and a cooling water outlet 252, and can achieve continuous heat dissipation through circulating cooling medium.

[0060] In addition, the annealing assembly 2 is provided with a through-structure ejector pin hole 26 for the ejector pin mechanism to pass through during the process; and multiple screw mounting holes 27 for installation and fixation with external structures. Figures 8 to 13 The overall structure, hierarchical relationship, and connection method of the main components of the annealing assembly 2 are shown.

[0061] Example 1: Optimized Degassing Component This embodiment provides a degassing assembly 1 as described above. This assembly can be manufactured separately and is used for efficient and uniform radiative heating of wafers, for example, to complete the degassing process before wafer coating in a separate degassing process chamber. The notch arrangement and radial distribution of its annular lamp assembly, as well as the double-tilted reflective surface design of the reflector, ensure highly uniform heating of the wafer and high thermal energy utilization.

[0062] Example 2: Apparatus and method integrating degassing and annealing This embodiment provides a complete heat treatment apparatus integrating the above-mentioned degassing component 1 and annealing component 2 into one unit, and its method of use. See also Figure 1 The device also includes a transport assembly 3 for transporting wafer 32 within the process cavity (see [reference]). Figure 14 ), and the ejector pin assembly 4 for raising and lowering wafer 32 (see Figure 15 The system includes a vacuum assembly 6 for providing a vacuum environment and a control assembly 7 for coordinating the operation of each assembly. The degassing assembly 1 is fixedly mounted to the top of the process chamber via a peripheral flange or a dedicated bracket of its reflector 11. The annealing assembly 2 is fixedly mounted to the bottom of the process chamber via a mounting structure at the bottom of its cooling assembly 25. The degassing assembly 1 is located directly above the annealing assembly 2, and the two maintain a certain alignment gap in the vertical direction. This gap allows the ejector assembly 4 to lift and lower the wafer and the sample transfer arm 31 to transfer the wafer.

[0063] Transmission component 3 (such as Figure 14 (As shown) includes a sample transfer arm 31 for transferring wafers 32 inside and outside the process cavity.

[0064] Ejector assembly 4 (e.g.) Figure 15 (As shown) It includes a ejector pin 41, a connecting rod 43, and a Z-direction displacement platform 44. The ejector pin 41 is used to support and lift the wafer 32, and the Z-direction displacement platform 44 can drive the ejector pin 41 to move up and down in the vertical direction, thereby realizing the smooth transfer of the wafer between different stations during the process.

[0065] Cavity assembly 5 includes a process chamber and a corresponding support structure. The process chamber is a sealed cavity in this device for degassing and annealing processes, and the support structure is used to install and fix the various functional components.

[0066] Vacuum assembly 6 includes a vacuum pump, a vacuum gauge, and vacuum valves. The vacuum pump is used to evacuate gases from the process chamber to create and maintain the vacuum environment required for the process (typically 10). -6 Pa to 10 - (³ Pa); The vacuum gauge is used to monitor the vacuum level in the cavity in real time and feed the signal back to the control system to control the opening and closing of the vacuum pump and valves.

[0067] The control component 7 includes a hardware carrier and a control program, which is used to coordinate and control the start-up, shutdown and operation sequence of various parts such as the degassing component 1, annealing component 2, transmission component 3, ejector pin component 4, and vacuum component 6, to ensure that the entire heat treatment process is carried out continuously, automatically and reliably.

[0068] The method for performing integrated heat treatment using this device includes the following steps: Step 1: Wafer Loading and Cavity Preparation The transfer assembly 3 delivers wafer 32 into the process cavity of the cavity assembly 5, and the ejector assembly 4 lifts the wafer to the degassing station. The vacuum assembly 6 activates, evacuating the process cavity to the required vacuum level, typically less than 5 × 10⁻⁶. -4 Pa.

[0069] Step 2: Collaborative Degassing The annealing assembly 2 is activated, and the lower surface of the wafer is preheated to about 150°C through the first heating assembly 21 and the second heating assembly 22, providing a uniform bottom temperature for degassing and avoiding wafer stress caused by sudden temperature changes. At the same time, the ring lamp assembly of the degassing assembly 1 is activated, and infrared radiation is focused onto the upper surface of the wafer through the reflector 11, so that the wafer quickly rises to the degassing target temperature of 200°C, completing the degassing process.

[0070] Step 3: Smooth Transition and Annealing After degassing is completed, the transfer component 3 removes the wafer 32 and sends it to the coating chamber for coating. After coating is completed, the transfer component 3 sends the wafer 32 into the process chamber of the cavity component 5, and the ejector pin component 4 lifts the wafer to the pre-processing station.

[0071] Vacuum assembly 6 is activated to evacuate the process chamber to the required vacuum level, typically less than 5 × 10⁻⁶. -5 Pa.

[0072] Multiple ring lights 12 first preheat the wafer 32, usually above 150°C; then the power of the ring lights 12 is gradually reduced, and the ejector pin assembly 4 smoothly places the wafer onto the heating surface 210 of the annealing assembly 2 for annealing, achieving a smooth transition from radiation heating to contact heating.

[0073] To save processing time, the first heating element 21 and the second heating element 22 are typically heated to the annealing process temperature, usually 300℃-600℃. The double-layered, cross-arranged heating elements ensure uniform heating of the wafer, the heat insulation element 23 reduces heat loss, and the cooling element 25 ensures that the temperature of surrounding components is controllable. During this stage, the ring lamp 12 can serve as an auxiliary preheating source, shortening the annealing heating time and further improving process efficiency.

[0074] Step 4: Cooling and Removal After the annealing process is completed, heating is stopped and the cooling assembly 25 is activated for active cooling. Once the wafer temperature drops to a safe range, the ejector assembly 4 lifts it up, and the transfer assembly 3 removes it from the process cavity, thus completing the entire degassing-annealing integrated heat treatment process.

[0075] This embodiment integrates the optimized degassing component and annealing component into the same process chamber, achieving seamless connection and automated continuous execution of heat treatment processes before and after coating. The annealing component provides uniform bottom preheating for degassing to reduce thermal stress, while the degassing lamp group provides rapid preheating for annealing to shorten the cycle time. The synergistic effect of the two significantly improves overall process efficiency and throughput, and avoids contamination, cooling, and positioning errors that may occur during multiple cavity transfers of the wafer.

[0076] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0077] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention, and no reference numerals in the claims should be construed as limiting the scope of the claims.

[0078] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A wafer heat treatment apparatus, characterized in that, Includes degassing components and annealing components. The degassing assembly includes a reflector and a ring lamp group located below the reflector. The ring lamp group includes a plurality of concentrically arranged ring lamp tubes. The reflector includes a planar reflective surface for reflecting upward radiation, an inwardly tilted reflective surface for reflecting outward radiation to the center region of the wafer, and an outwardly tilted reflective surface for reflecting inward radiation to the outer region of the wafer. The annealing assembly includes a first heating assembly, a second heating assembly, a heat insulation component, and a cooling assembly stacked sequentially from top to bottom. The first heating assembly contains a first heating element, and the second heating assembly contains a second heating element. The first heating element and the second heating element are arranged to intersect in their horizontal extension directions.

2. The apparatus according to claim 1, characterized in that, The degassing component and the annealing component are disposed in the same process chamber. The degassing component is fixedly installed on the top or upper side wall of the process chamber, and the annealing component is fixedly installed on the bottom of the process chamber. The degassing component is located directly above the annealing component.

3. The apparatus according to claim 1 or 2, characterized in that, The ring-shaped light assembly consists of four concentric ring-shaped lamp tubes, each with a radiation notch angle of θ1, θ2, θ3, and θ4, respectively. The total notch angle θ = θ1 + θ2 + θ3 + θ4, and the interval angle between the ends of each ring-shaped lamp tube is θ. m =(360°-θ) / 4, so that the gaps are evenly distributed in the circumferential direction.

4. The apparatus according to claim 3, characterized in that, Let the diameter of the wafer be D0. The diameters of the circles containing the centers of the four annular lamps from the inside out are D1, D2, D3, and D4, respectively, and satisfy D1≥1 / 4·D0, D2≥1 / 2·D0, D3≥3 / 4·D0, and D4≥D0.

5. The apparatus according to claim 1 or 2, characterized in that, The angle between the inwardly tilted reflecting surface and the vertical plane is the inward tilt angle β. in It satisfies the following relationship: ； Where R is the radius of the lamp tube, r ref Let r be the radius of the reflection point on the inner reflecting surface. ref = R - d in d in r is the displacement of the reflection point. t Let z be the target illumination radius. ref Let z be the height of the reflection point and z ref = H + h, where H is the distance from the lamp tube plane to the wafer, and h is the distance from the lamp tube to the reflective surface.

6. The apparatus according to claim 5, characterized in that, The angle between the outwardly tilted reflecting surface and the vertical plane is the outward tilt angle β. out It satisfies the following relationship: ； Among them, R in R is the inner radius of the lamp tube and in = R - 5 mm, r ref Let r be the radius of the reflection point on the outer reflecting surface. ref = R +d out d out This represents the amount of outward displacement of the reflection point.

7. The apparatus according to claim 6, characterized in that, The ring-shaped light assembly includes four ring-shaped light tubes, corresponding to the ring-shaped light tubes from the inside to the outside, and the inclination angle β is... in The outward tilt angles are 25°, 20°, 15°, and 10°, respectively. out The angles are 40°, 35°, 30°, and 25° respectively.

8. The apparatus according to claim 2, characterized in that, The device also includes a transfer assembly for transferring wafers within the process cavity, a pusher assembly for raising and lowering wafers, a vacuum assembly for providing a vacuum environment, and a control assembly for coordinating and controlling the operation of the various assemblies.

9. A wafer heat treatment method, characterized in that, The apparatus according to any one of claims 1 to 8 comprises the following steps: Step 1: Send the wafer into the processing area and evacuate it; Step 2: Start the annealing assembly to preheat the lower surface of the wafer, and simultaneously start the degassing assembly to radiate heat the upper surface of the wafer to complete the degassing. Step 3: Remove the degassed wafer and perform coating. Then, send the coated wafer back into the processing area and evacuate it. Use the degassed component to preheat the wafer. Then, reduce the power of the degassed component and place the wafer on the heating surface of the annealing component for contact annealing. Step 4: After annealing, stop heating and cool the wafer, then remove the wafer.

10. The method according to claim 9, characterized in that, In step one, the pressure in the treatment area is reduced to less than 5 × 10⁻⁶. -4 Vacuum degree in Pa; In step three, the pressure in the treatment area is reduced to less than 5 × 10⁻⁶. -5 Vacuum degree in Pa.

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