Semiconductor device

Abstract

The application discloses a semiconductor device, comprising: a plastic package; a substrate, the substrate is at least partially arranged in the plastic package, and the substrate comprises a power pad; a driving side pin frame, the driving side pin frame is arranged in the plastic package and is arranged at one side of the substrate in a longitudinal direction, the driving side pin frame is at least partially extended from the plastic package, at least two bootstrap chip pads are arranged in the longitudinal direction, a high-side driving pad and a low-side driving pad are connected with each other; wherein a projection of the high-side driving pad and one of the at least two bootstrap chip pads closest to the low-side driving pad in the longitudinal direction is coincident. The projection of the high-side driving pad and one of the at least two bootstrap chip pads closest to the low-side driving pad in the longitudinal direction is coincident, the projection of the high-side driving pad and the other two bootstrap chips in the longitudinal direction is spaced from each other, the heat dissipation of the driving side pin frame is better, and the jumper connection of the power chip and the driving pin is facilitated.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Technology

[0002] In an IPM intelligent power module, the signal connection between the IC driver chip and the IGBT chip is achieved through gold-copper wire bonding. Due to the size limitations of the driver IC's chip PAD, the diameter of the gold-copper wire is generally around 1.0-1.3 mil. When there is a large height difference between the solder joints on the IC and the solder joints on the IGBT, and the wire arc length is very long, the following risks may arise: vibrations during transportation after WB bonding can cause wire arc deformation and solder joint breakage; and during the molding process, the flow of epoxy molding compound can cause gold wire breakage, leading to internal short circuits in the product. Summary of the Invention

[0003] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention proposes a semiconductor device in which the high-side drive pad coincides with the longitudinal projection of the nearest low-side drive pad among at least two bootstrap chips, the longitudinal projections of the high-side drive pad and the other two bootstrap chips are spaced apart, the heat dissipation of the drive-side pin frame is improved, and the jumper connection between the power chip and the drive pin is facilitated.

[0004] According to an embodiment of the present invention, the semiconductor device includes: a molding compound (10) having a lateral direction, a longitudinal direction, and a vertical direction, the lateral direction, the longitudinal direction, and the vertical direction being perpendicular to each other; a substrate at least partially disposed within the molding compound, the substrate including power pads on which power chips are disposed; a drive-side pin frame disposed within the molding compound and spaced apart on one side of the longitudinal direction of the substrate, the drive-side pin frame at least partially extending from the molding compound, the drive-side pin frame having a high-side drive pad, a low-side drive pad, and at least two bootstrap chip pads, the at least two bootstrap chip pads being spaced apart in the longitudinal direction, the high-side drive pad and the low-side drive pad being interconnected; wherein the projection of the high-side drive pad in the longitudinal direction coincides with that of the low-side drive pad closest to the at least two bootstrap chip pads.

[0005] According to the semiconductor device of the present invention, the high-side drive pad coincides with the longitudinal projection of the nearest low-side drive pad among at least two bootstrap chips, and the longitudinal projections of the high-side drive pad and the other two bootstrap chips are spaced apart from each other. The heat dissipation of the drive-side pin frame is better, and it is beneficial to the jumper connection between the power chip and the drive pin.

[0006] According to some embodiments of the present invention, a high-side drive floating power supply ground pin and a high-side gate drive power supply voltage pin are disposed between the high-side drive pad and the one closest to the low-side drive pad among at least two bootstrap chip pads; a high-side drive chip is disposed on the high-side drive pad, a bootstrap chip is disposed on the bootstrap chip pad, the high-side drive chip is connected to the high-side drive floating power supply ground pin, and at least two bootstrap chips are connected to the high-side gate drive power supply voltage pin.

[0007] According to some embodiments of the present invention, the high-side gate drive power supply voltage pin includes a first pin portion, a second pin portion, a third pin portion, a fourth pin portion, a fifth pin portion, and a sixth pin portion connected in sequence; the first pin portion protrudes from the molding compound, the second pin portion and the low-side drive pad are spaced apart, the third pin portion and the high-side drive pad are spaced apart laterally, the fourth pin portion and the high-side drive pad are spaced apart longitudinally, the fifth pin portion avoids the high-side drive floating power supply ground pin laterally, and the sixth pin portion extends longitudinally.

[0008] According to some embodiments of the present invention, the longitudinal distance between the high-side drive pad and the closest of the at least two bootstrap chip pads to the low-side drive pad is h1, where h1 satisfies the relationship: 1.4mm < h1 < 2.2mm.

[0009] According to some embodiments of the present invention, a high-side driving chip is disposed on the high-side driving pad, a low-side driving chip is disposed on the low-side driving pad, and a bootstrap chip is disposed on the bootstrap chip pad; the projections of the high-side driving chip, the low-side driving chip, and the bootstrap chip in the lateral direction are arranged at intervals.

[0010] According to some embodiments of the present invention, a high-side driving chip is disposed on the high-side driving pad, and the distances from the two ends of the high-side driving chip to the two sides of the driving pin frame in the longitudinal direction are h2 and h3, respectively, and h2 and h3 satisfy the relationship: 0.9 < h2 / h3 < 1.

[0011] According to some embodiments of the present invention, a high-side driving chip is disposed on the high-side driving pad, and the distances from the two ends of the high-side driving chip to the two sides of the driving pin frame in the lateral direction are h4 and h5, respectively, and h4 and h5 satisfy the relationship: 0.6 < h4 / h5 < 0.7.

[0012] According to some embodiments of the present invention, the power pad includes a high-side power pad and at least two low-side power pads; wherein, in the lateral direction, the distance between the lower edge of the high-side drive pad and the upper edge of the high-side power pad is h6, and h6 satisfies the relationship: 2.9mm < h6 < 3.8mm.

[0013] According to some embodiments of the present invention, the molding compound is provided with a connecting groove, and the connecting groove and the power chip are projected in the lateral direction.

[0014] According to some embodiments of the present invention, the distances between the connecting groove and the two ends of the encapsulated body in the longitudinal direction are h7 and h8, respectively, and h7 and h8 satisfy the relationship: 0.7 < h7 / h8 < 0.8.

[0015] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 2 This is a partial schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 3 This is a partial schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 4 This is a partial cross-sectional view of a semiconductor device according to an embodiment of the present invention.

[0017] Figure label: 100. Semiconductor devices; 10. Plastic sealant; 20. Substrate; 21. High-side power pad; 211. High-side power chip; 22. Low-side power pad; 221. Low-side power chip; 23. Connector groove 23; 30. Driver-side pin frame; 31. High-side driver pad; 311. High-side driver chip; 32. Low-side driver pad; 321. Low-side driver chip; 33. Bootstrap chip pad; 331. Bootstrap chip; 40. High-side gate drive power supply voltage pin; 41. First pin section; 42. Second pin section; 43. Third pin section; 44. Fourth pin section; 45. Fifth pin section; 46. Sixth pin section; 50, High-side drive floating power supply ground pin; 60, High-side input pin; 70, Drive pin. Detailed Implementation

[0018] The embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. The embodiments of the present invention are described in detail below.

[0019] The following is for reference. Figures 1-4 A semiconductor device 100 according to an embodiment of the present invention is described.

[0020] Reference Figure 1 As shown, the semiconductor device 100 according to the present invention mainly includes: a molding compound 10, a substrate 20, and a drive-side pin frame 30. The substrate 20 is at least partially disposed within the molding compound 10. The substrate 20 may be completely encapsulated by the molding compound 10, or it may be partially encapsulated and partially exposed on the surface of the molding compound 10. The drive-side pin frame 30 is at least partially disposed within the molding compound 10, and partially extends out of the molding compound 10 for electrical connection with external components. The molding compound 10 protects the substrate 20 and the drive-side pin frame 30 within the semiconductor device 100, ensuring their stable placement and providing electrical insulation from external sources, thus guaranteeing the structural reliability of the semiconductor device 100. It should be noted that the pins of the drive-side pin frame 30 are spaced apart to ensure electrical isolation between them, and the longitudinal dimensions of the portions of the pins extending out of the molding compound 10 are inconsistent; this will not be elaborated further here.

[0021] Furthermore, the substrate 20 includes power pads on which power chips are disposed, and the drive-side pin frame 30 has drive pads on which drive chips are disposed. The signal connection between the power chip and the drive chip needs to be fixed by soldering to the corresponding pads on the power chip and the drive chip respectively through electrical connection lines. Due to the structural design of the semiconductor device 100, the drive-side pin frame 30 needs to be set vertically higher than the substrate 20 so that the drive chip is away from the high-temperature area of ​​the power chip, thereby improving the heat dissipation effect. At the same time, it increases the electrical clearance and creepage distance, reduces the risk of high voltage interference and crosstalk, and improves the stability of drive control and system safety.

[0022] Reference Figures 1-3 As shown, the driver-side pin frame 30 includes at least two low-side driver pads 32 and high-side driver pads 31. Low-side driver chips 321 and high-side driver chips 311 are respectively disposed on the low-side driver pads 32 and 311. The low-side driver chip 321 and the low-side power chip 221 correspond at least partially to each other in the vertical direction, and the high-side driver chip 311 and the high-side power chip 211 correspond at least partially to each other in the vertical direction. The low-side driver chip 321 and the high-side driver chip 311 are connected by conductive wires such as gold or copper wires. The low-side driver chip 321 and the high-side driver chip 311 are positioned close to each other vertically while maintaining a gap. This facilitates the connection between the low-side driver chip 321 and the high-side driver pad 31, while also ensuring that the positions of the low-side driver chip 321 and the high-side driver chip 311 do not overlap vertically, providing ample operating space when soldering conductive wires, reducing signal interference, and improving transmission efficiency. Furthermore, the close proximity of the low-side driver chip 321 and the high-side driver chip 311 to the center of the driver-side pin frame 30 effectively shortens the current transmission distance and reduces power loss.

[0023] Combination Figures 1-3 As shown, the driver-side pin frame 30 is provided with a high-side driver pad 31, a low-side driver pad 32 and at least two bootstrap chip pads 33, which are arranged at intervals in the vertical direction. The high-side driver pad 31 and the low-side driver pad 32 are connected to each other.

[0024] In this configuration, the high-side drive pad 31 coincides with the longitudinal projection of the nearest low-side drive pad 32 among at least two bootstrap chip pads 33. In other words, the longitudinal projection of the high-side drive pad 31 and the bootstrap chip pad 33 closest to the low-side drive pad 32 coincides, allowing the high-side drive pad 31 to be offset from at least two bootstrap chip pads 33. This results in a more rational arrangement of the drive-side pin frame 30, leading to better heat dissipation.

[0025] Thus, the high-side drive pad 31 coincides with the longitudinal projection of the nearest low-side drive pad 32 among at least two bootstrap chips 331, while the longitudinal projections of the high-side drive pad 31 and the other two bootstrap chips 331 are spaced apart. This improves the heat dissipation of the drive-side pin frame 30 and facilitates the jumper connection between the power chip and the drive pin 70.

[0026] In some embodiments of the present invention, functional pins in the drive-side pin frame 30 extend from the longitudinal side of the molded body 10 adjacent to the drive-side pin frame 30 and are connected to external devices to perform functions. The pins in the drive-side pin frame 30 that are connected to at least one side of the molded body 10 in the lateral direction, such as jumper pins, are high-voltage pins. The high-voltage pins need to be insulated at the ends that are connected to the molded body 10 in the lateral direction to prevent the jumper pins from extending out of the molded body 10.

[0027] Furthermore, combined Figure 3As shown, the high-side drive pad 31 is connected to the low-side drive pad 32. In the vertical direction, the high-side drive pad 31 protrudes at least partially relative to the side of the low-side drive pad 32 facing the substrate 20. The three low-side jumper pins are all spaced apart on the side of the low-side drive pad 32 facing the substrate 20 in the vertical direction. The part of the high-side drive pad 31 that protrudes relative to the side of the low-side drive pad 32 facing the substrate 20 in the vertical direction is defined as the protrusion. The low-side jumper pins are spaced apart on the side of the protrusion facing the low-side boundary in the horizontal direction.

[0028] Specifically, by connecting the high-side drive pad 31 to the low-side drive pad 32, and making the high-side drive pad 31 at least partially protrude relative to the low-side drive pad 32 on the side facing the substrate 20, the high-side drive pad 31 can avoid the bootstrap chip 331 and its corresponding pins. On the other hand, the heat dissipation distribution of the high-side drive chip 311, the low-side drive chip 321 and the bootstrap chip 331 can be more uniform, preventing the heat from being too concentrated and improving the heat dissipation performance of the semiconductor device 100.

[0029] A high-side drive floating power supply ground pin 50 and a high-side gate drive power supply voltage pin 40 are provided between the high-side drive pad 31 and the nearest low-side drive pad 32 among at least two bootstrap chip pads 33. A high-side drive chip 311 is provided on the high-side drive pad 31, and a bootstrap chip 331 is provided on the bootstrap chip pad 33. The high-side drive chip 311 is connected to the high-side drive floating power supply ground pin 50, and at least two bootstrap chips 331 are connected to the high-side gate drive power supply voltage pin 40.

[0030] The bootstrap chip 331 provides a reliable floating power supply to the high-side driver chip 311 with a minimalist circuit structure. The bootstrap chip 331 is positioned far from both the low-side driver pad 32 and the high-side driver pad 31, allowing for more space to be allocated to it. Simultaneously, the connection between the bootstrap chip 331 and the high-side driver chip 311 is optimized, ensuring efficient circuit operation.

[0031] Furthermore, the layout of the bootstrap chip 331 makes full use of the space on the side of the semiconductor device 100 away from the low-side driver chip 321 along the lateral midline, avoiding conflicts with other functional components and further improving the space utilization of the semiconductor device 100. Through this compact and reasonable arrangement, the semiconductor device 100 not only achieves functional integrity but also significantly enhances heat dissipation performance and operational stability.

[0032] Specifically, the high-side driver floating power supply ground pin 50 is a common pin in the existing driver-side pin frame 30. In the prior art, the high-side driver floating power supply ground pin 50 and the high-side driver chip 311 are electrically connected to provide a floating reference ground with the same potential as the source of the power transistor for the high-side driver circuit. By electrically connecting the emitter pad of the high-side power chip 211 to the high-side driver floating power supply ground pin 50, the high-side driver chip 311 is still electrically connected to the high-side driver floating power supply ground pin 50. While ensuring the original function of the high-side driver floating power supply ground pin 50, the arc length of the electrical connection line between the emitter pad of the high-side power chip 211 and the high-side driver floating power supply ground pin 50 is smaller. The arc length of the electrical connection line between the high-side driver floating power supply ground pin 50 and the high-side driver chip 311 is smaller, which can improve the stability and reliability of the electrical connection between the emitter pad of the high-side power chip 211 and the high-side driver chip 311.

[0033] Among them, a W1 phase high-side drive floating power supply ground pin 50 is provided between the high-side drive pad 31 and the nearest low-side drive pad 32 among at least two bootstrap chip pads 33.

[0034] The high-side gate drive supply voltage pin 40 is a "floating" power supply pin dedicated to powering the high-side drive chip 311. Its potential is variable because it references the voltage of the switching node (VS or SH) rather than a fixed ground. It is responsible for providing the energy to drive the high-side drive chip 311. Since this voltage is typically generated by bootstrap technology, the high-side gate drive supply voltage pin 40 is also connected to at least two bootstrap chips 331.

[0035] Thus, by setting a high-side drive floating power supply ground pin 50 and a high-side gate drive power supply voltage pin 40 between the high-side drive pad 31 and the nearest low-side drive pad 32 among at least two bootstrap chip pads 33, the distance between the bootstrap chip pad 33 and the high-side drive pad 31 is increased. This avoids the heat dissipation between the bootstrap chip 331 and the high-side drive chip 311 being too close, which would cause mutual interference and lead to a decrease in the performance of the bootstrap chip 331 and the high-side drive chip 311, or even parameter drift.

[0036] Furthermore, the high-side gate drive power supply voltage pin 40 includes a first pin portion 41, a second pin portion 42, a third pin portion 43, a fourth pin portion 44, a fifth pin portion 45, and a sixth pin portion 46 connected in sequence; the first pin portion 41 protrudes from the molding compound 10, the second pin portion 42 and the low-side drive pad 32 are spaced apart, the third pin portion 43 and the high-side drive pad 31 are spaced apart laterally, the fourth pin portion 44 and the high-side drive pad 31 are spaced apart vertically, the fifth pin portion 45 avoids the high-side drive floating power supply ground pin 50 laterally, and the sixth pin portion 46 extends vertically.

[0037] In other words, the third pin portion 43 and the fourth pin portion 44 are respectively located at the edge of the high-side drive pad 31, so that the heat of the high-side drive chip 311 can be transferred to the outside of the molded body 10 through the third pin portion 43 and the fourth pin portion 44.

[0038] Furthermore, there are three bootstrap chips 331, wherein the bootstrap chip 331 that is vertically adjacent to the high-side drive chip 311 is connected to the third pin portion 43 by a wire, and the other two bootstrap chips 331 are connected to the sixth pin portion 46 by a wire.

[0039] Furthermore, referring to Figure 2 As shown, the longitudinal distance between the high-side drive pad 31 and the nearest low-side drive pad 32 among the at least two bootstrap chip pads 33 is h1, where h1 satisfies the relationship: 1.4mm < h1 < 2.2mm. In other words, setting the distance between the high-side drive pad 31 and the bootstrap chip pad 33 between 1.4mm and 2.2mm can improve the reliability of the semiconductor device 100 while ensuring electrical performance. This arrangement helps optimize space utilization and ensures the stability of electrical connections.

[0040] Reference Figure 2 As shown, the projections of the high-side driving chip 311, low-side driving chip 321, and bootstrap chip 331 in the horizontal direction are spaced apart. This arrangement ensures that the horizontal heat dissipation of the high-side driving chip 311, low-side driving chip 321, and bootstrap chip 331 does not affect each other. This results in good heat dissipation for all three chips, thus preventing performance degradation and parameter drift at high temperatures.

[0041] For example, the low-side drive pad 32, high-side drive pad 31, and bootstrap chip pad 33 can partially overlap or be staggered in the lateral direction. The low-side drive pad 32 and high-side drive pad 31 are electrically connected to other areas of the drive-side pin frame 30 via gold or copper wires, and the drive-side pin frame 30 is electrically connected to the power chip on the substrate 20 via conductive lines. Both the low-side drive pad 32 and high-side drive pad 31 are rectangular, and they partially overlap in the vertical direction. For example, as... Figure 3 As shown, the low-side drive pad 32 is connected to the left and top sides of the high-side drive pad 31, so that the low-side drive pad 32 and the high-side drive pad 31 are staggered in both the length and width directions along the drive-side pin frame 30, so as to connect conductive lines in other areas of the frame. The conductive lines can be aluminum wires, which are more robust than gold or copper wires. The conductive lines cross the drive-side pin frame 30 and the power chip on the substrate 20, maintaining a good electrical connection.

[0042] Reference Figure 3 As shown, a high-side drive chip 311 is disposed on the high-side drive pad 31. The distances from the two ends of the high-side drive chip 311 to the two sides of the drive pin 70 frame in the longitudinal direction are h2 and h3, respectively, and h2 and h3 satisfy the relationship: 0.9 < h2 / h3 < 1. That is to say, the high-side drive pad 31 is basically located in the middle region of the drive-side pin frame 30 in the longitudinal direction. Furthermore, the high-side drive chip 311 on the high-side drive pad 31 is connected to the outer region of the drive-side pin frame 30 and the drive pin 70 through conductive wires. The conductive wires (gold wires or copper wires) connecting the high-side drive pad 31 and the low-side drive pad 32 are staggered from each other in the longitudinal direction, and the conductive wires (aluminum wires) connected to the outside of the drive-side pin frame 30 are also staggered from each other in the longitudinal direction. The wiring is neater, the soldering difficulty is reduced, and the consistency and reliability of the product are ensured.

[0043] A high-side drive chip 311 is disposed on the high-side drive pad 31. The distances from the two ends of the high-side drive chip 311 to the drive pin 70 frame on both sides in the horizontal direction are h4 and h5, respectively. h4 and h5 satisfy the relationship: 0.6 < h4 / h5 < 0.7. That is to say, the high-side drive pad 31 is close to the substrate 20 in the horizontal direction, and a certain space is reserved on the side of the semiconductor device's horizontal centerline away from the low-side drive pad 32 to arrange components such as the bootstrap chip 331, thereby optimizing space utilization. Furthermore, the high-side drive chip 311 on the high-side drive pad 31 is connected to the external area of ​​the drive-side pin frame 30 and the drive pin 70 through conductive wires. The conductive wires (gold or copper wires) connecting the high-side drive pad 31 and the low-side drive pad 32 are staggered from each other in the vertical direction, and the conductive wires (aluminum wires) connected to the external area of ​​the drive-side pin frame 30 are also staggered from each other in the vertical direction, making the wiring neater, reducing the soldering difficulty, and ensuring product consistency and reliability.

[0044] In addition, the high-side driving chip 311 is closer to the substrate 20. This allows the high-side driving chip 311 to be kept away from the bootstrap chip 331 to avoid affecting the heat dissipation of the bootstrap chip 331. On the other hand, it can dissipate heat by being close to the substrate 20.

[0045] Furthermore, the ratio of the two ends of the high-side driver chip 311 to the two sides of the driver pin 70 frame in the horizontal direction is 0.67.

[0046] The power pads include a high-side power pad 21 and at least two low-side power pads 22. At least two high-side power chips 211 are disposed on the high-side power pad 21, and low-side power chips 221 are disposed on the low-side power pads 22. Laterally, the distance between the lower edge of the high-side drive pad 31 and the upper edge of the high-side power pad 21 is h6, where h6 satisfies the relationship: 2.9mm < h6 < 3.8mm. This arrangement increases the distance between the high-side drive pad 31 and the high-side power pad 21, keeping the drive chip away from the high-temperature area of ​​the power chip, improving heat dissipation. It also increases the electrical clearance and creepage distance, reducing the risk of high-voltage interference and crosstalk, and improving drive control stability and system safety.

[0047] Among them, reference Figure 2 As shown, the molding compound 10 has a connection groove 23, which overlaps with the projection of the power chip in the lateral direction. The connection groove 23 is closer to the power pad, so that the connection wire of the screw passing through the connection groove 23 can pass through the power chip, thereby allowing the power chip to better fit with the substrate 20 under external force, thus effectively improving the heat exchange effect between the power chip and the substrate 20.

[0048] The longitudinal distances between the connecting groove 23 and the two ends of the molding compound 10 are h7 and h8, respectively, and h7 and h8 satisfy the relationship: 0.7 < h7 / h8 < 0.8. That is to say, the connecting groove 23 is closer to the power pad, so that the connection wire of the screw passing through the connecting groove 23 can pass through the power chip, thereby allowing the power chip to better fit with the substrate 20 under external force, thus effectively improving the heat exchange effect between the power chip and the substrate 20.

[0049] Specifically, the dimension of the connecting groove 23 facing the end of the molded body 10 with the power pad is h7, and the dimension of the connecting groove 23 facing the end of the molded body 10 with the drive-side pin frame 30 is h8. Further, the ratio of the distance between the connecting groove 23 and the two ends of the molded body 10 in the longitudinal direction is 0.75.

[0050] In some specific embodiments of the present invention, the longitudinal distance between the drive-side pin frame 30 and the substrate 20 is equal, or the longitudinal distance between the substrate 20 and the drive-side pin frame 30 is slightly larger. This provides both the drive-side pin frame 30 and the substrate 20 with ample space for connecting wires (gold or copper) or conductive lines (aluminum), facilitating neat wiring and ensuring sufficient space for the functional areas of both the drive-side pin frame 30 and the substrate 20. This satisfies the zoning optimization of the semiconductor device 100, maintaining stable operation even in high-density integration environments. Furthermore, by rationally controlling the distance relationship between the drive-side pin frame 30 and the substrate 20, stress concentration problems caused by differences in thermal expansion coefficients can be effectively reduced, further improving the reliability and lifespan of the semiconductor device 100.

[0051] Furthermore, the low-side driver chip 321 and the high-side driver chip 311 can be directly bonded together using wires (e.g., gold or copper wires), or they can be electrically connected by sharing a common wire (e.g., gold or copper wire) to the high-side input pin 60. When the low-side driver chip 321 and the high-side driver chip 311 are directly bonded together, controlling the lateral distance L3 between them reduces the length of the conductive wires, effectively reducing signal transmission delay and interference. When L3 is between 3mm and 5.2mm, it satisfies the signal transmission requirements between the low-side driver chip 321 and the high-side driver chip 311 while avoiding electromagnetic interference or short-circuit risks caused by excessive distance. Furthermore, this design provides ample space for the arrangement of conductive wires, allowing gold or copper wires to connect the low-side driver chip 321 and the high-side driver chip 311 laterally in a more optimized path, further improving the overall reliability of the semiconductor device 100. Moreover, the layout of the low-side driver chip 321 and the high-side driver chip 311 also achieves good heat dissipation. By rationally allocating the position and distance of the pads, the heat generated by the low-side driver chip 321 and the high-side driver chip 311 during operation can be effectively dispersed, avoiding localized overheating.

[0052] Furthermore, jumper pins are provided on one side of the drive pin 70 frame that is longitudinally adjacent to the substrate 20, and the jumper pins are arranged longitudinally between the drive chip and the power chip. Thus, when the jumper pins are electrically connected to the power chip and the drive chip respectively through electrical connection lines, the arc length of the electrical connection line between the power chip and the jumper pin is shorter, and the arc length of the electrical connection line between the drive chip and the jumper pin is also shorter. This can improve the stability of the electrical connection between the power chip and the jumper pin, and can also improve the stability of the electrical connection between the drive chip and the jumper pin, thereby improving the structural reliability of the semiconductor device 100.

[0053] In some embodiments of the present invention, the electrical connection between the high-side driving chip 311 and the high-side driving floating power supply ground pin 50 is a gold-copper wire, the electrical connection between the high-side driving chip 311 and the high-side jumper pin is a gold-copper wire, the electrical connection between the gate pad of the high-side power chip 211 and the high-side jumper pin is an aluminum wire, and the electrical connection between the emitter pad of the high-side power chip 211 and the high-side driving floating power supply ground pin 50 is an aluminum wire.

[0054] In some embodiments of the present invention, the diameter of the aluminum wire is mil, which is larger than that of the gold-copper wire. This can further reduce the risk of wire arc deformation and molding failure caused by vibration.

[0055] In some embodiments of the present invention, the substrate 20 may include pads and an insulating heat dissipation layer disposed below the pads. The insulating heat dissipation layer is mainly formed by sequentially stacking an insulating resin sheet and a copper layer, or by sequentially stacking an insulating resin sheet and an aluminum layer. The main material of the pads is copper or aluminum. In this case, most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the copper layer or the outer surface of the aluminum layer in the insulating heat dissipation layer of the substrate 20 is exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads, an insulating layer, and a heat dissipation layer sequentially stacked. The main material of the pads is a copper layer or an aluminum layer, and the main material of the insulating layer is AlN, or Al, or SiN, or a combination thereof. In the case of a ceramic insulating layer with a heat dissipation layer primarily composed of copper or aluminum, the substrate 20 is mostly encapsulated by the molding compound 10, with the outer surface of the heat dissipation layer of the substrate 20 exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads and an insulating layer disposed below the pads, wherein the main material of the insulating layer is an AlN ceramic insulating layer, or an Al ceramic insulating layer, or a SiN ceramic insulating layer. In this case, the substrate 20 is mostly encapsulated by the molding compound 10, with the outer surface of the insulating layer of the substrate 20 exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may be formed solely of pads, in which case the substrate 20 is disposed within the molding compound 10, and the molding compound 10 completely encapsulates the substrate 20. The specific structural form of the substrate 20 can be adjusted according to the specific requirements and application environment of the semiconductor device 100.

[0056] The circuit board assembly according to the present invention may mainly include the semiconductor device 100 described above. Specifically, since the semiconductor device 100 has a more reliable structure and higher reliability and stability, applying the semiconductor device 100 to the circuit board assembly can prevent short circuits in the circuit board assembly and improve the working performance of the circuit board assembly.

[0057] The electrical control box according to the present invention may mainly include the aforementioned circuit board assembly. Specifically, since the circuit board assembly has a more reliable structure and good working performance, applying the circuit board assembly to the electrical control box can improve the working performance of the electrical control box and extend its service life.

[0058] The electrical device according to the present invention may mainly include: the aforementioned electrical control box. Specifically, since the electrical control box has a more reliable structure and good working performance, applying the electrical control box to the electrical device can improve the working performance and quality of the electrical device.

[0059] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0060] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0061] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor device, characterized in that, include: A molding compound (10) having a horizontal, a vertical and a longitudinal dimension, wherein the horizontal, the longitudinal and the vertical dimensions are perpendicular to each other; A substrate (20) is at least partially disposed within the molding compound (10), the substrate (20) including power pads on which power chips are disposed; A drive-side pin frame (30) is at least partially disposed within the molding compound (10) and spaced apart on one side of the substrate (20) in the longitudinal direction. The drive-side pin frame (30) extends at least partially from the molding compound (10). The drive-side pin frame (30) is provided with a high-side drive pad (31), a low-side drive pad (32), and at least two bootstrap chip pads (33). The at least two bootstrap chip pads (33) are spaced apart in the longitudinal direction. The high-side drive pad (31) and the low-side drive pad (32) are connected to each other. The high-side drive pad (31) overlaps in the longitudinal projection with the closest low-side drive pad (32) among the at least two bootstrap chip pads (33).

2. The semiconductor device according to claim 1, characterized in that, A high-side drive floating power supply ground pin (50) and a high-side gate drive power supply voltage pin (40) are provided between the high-side drive pad (31) and the one of the at least two bootstrap chip pads (33) that is closest to the low-side drive pad (32). A high-side drive chip (311) is disposed on the high-side drive pad (31), and a bootstrap chip (331) is disposed on the bootstrap chip pad (33). The high-side drive chip (311) is connected to the high-side drive floating power supply ground pin (50), and at least two bootstrap chips (331) are connected to the high-side gate drive power supply voltage pin (40).

3. The semiconductor device according to claim 2, characterized in that, The high-side gate drive power supply voltage pin (40) includes a first pin section (41), a second pin section (42), a third pin section (43), a fourth pin section (44), a fifth pin section (45), and a sixth pin section (46) connected in sequence. The first pin portion (41) protrudes from the molding compound (10), the second pin portion (42) and the low-side drive pad (32) are spaced apart, the third pin portion (43) and the high-side drive pad (31) are spaced apart in the lateral direction, the fourth pin portion (44) and the high-side drive pad (31) are spaced apart in the longitudinal direction, the fifth pin portion (45) avoids the high-side drive floating power supply ground pin (50) in the lateral direction, and the sixth pin portion (46) extends in the longitudinal direction.

4. The semiconductor device according to claim 1, characterized in that, The longitudinal distance between the high-side drive pad (31) and the nearest low-side drive pad (32) among the at least two bootstrap chip pads (33) is h1, where h1 satisfies the relationship: 1.4mm < h1 < 2.2mm.

5. The semiconductor device according to claim 1, characterized in that, A high-side driving chip (311) is disposed on the high-side driving pad (31), a low-side driving chip (321) is disposed on the low-side driving pad (32), and a bootstrap chip (331) is disposed on the bootstrap chip pad (33). The projections of the high-side driving chip (311), the low-side driving chip (321), and the bootstrap chip (331) in the horizontal direction are spaced apart from each other.

6. The semiconductor device according to claim 1, characterized in that, A high-side driving chip (311) is provided on the high-side driving pad (31). The distances from the two ends of the high-side driving chip (311) to the two sides of the driving pin (70) frame in the longitudinal direction are h2 and h3, respectively. h2 and h3 satisfy the relationship: 0.9 < h2 / h3 < 1.

7. The semiconductor device according to claim 1, characterized in that, A high-side driving chip (311) is provided on the high-side driving pad (31). The distances from the two ends of the high-side driving chip (311) to the driving pin (70) frame on both sides in the horizontal direction are h4 and h5, respectively. h4 and h5 satisfy the relationship: 0.6 < h4 / h5 < 0.

7.

8. The semiconductor device according to claim 1, characterized in that, The power pads include a high-side power pad (21) and at least two low-side power pads (22). In the horizontal direction, the distance between the lower edge of the high-side drive pad (31) and the upper edge of the high-side power pad (21) is h6, and h6 satisfies the relationship: 2.9mm < h6 < 3.8mm.

9. The semiconductor device according to claim 1, characterized in that, The molding compound (10) is provided with a connecting groove (23), and the connecting groove (23) and the power chip are projected in the horizontal direction.

10. The semiconductor device according to claim 9, characterized in that, The distances between the connecting groove (23) and the two ends of the plastic seal (10) in the longitudinal direction are h7 and h8, respectively, and h7 and h8 satisfy the relationship: 0.7 < h7 / h8 < 0.8.

Images