Semiconductor device

Abstract

The application discloses a semiconductor device, which comprises a plastic package, a substrate, a driving side pin frame, and a plurality of jumper pins. The substrate comprises a power pad, on which a power chip is arranged. The driving side pin frame comprises a driving pad, on which a driving chip is arranged. The driving side pin frame further comprises the plurality of jumper pins, which are arranged on a side of the driving side pin frame adjacent to the substrate in a longitudinal direction. The plurality of jumper pins are arranged between the driving side pin frame and the substrate in the longitudinal direction. The jumper pins extend in a transverse direction and are connected to a side of the plastic package in the transverse direction. The jumper pins are electrically connected to the power chip and the driving chip, respectively. Thus, the arc length of the electric connection line of the electric connection between the jumper pins and the power chip and the driving chip can be reduced without increasing the size of the semiconductor device, so that the stability and reliability of the electric connection between the power chip and the driving chip can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Technology

[0002] Electronic control boards for devices such as air conditioners and washing machines can incorporate semiconductor devices like smart power blocks. In existing smart power modules, the signal connection between the IC driver chip and the IGBT power chip requires bonding via electrical connection wires. When there is a significant height difference between the solder joints on the IC driver chip and the IGBT power chip, the arc length of the electrical connection wire between them will be large. This not only causes wire breakage during the molding process due to the flow of molding compound, leading to internal short circuits in the smart power block, but also causes arc deformation and solder joint breakage due to vibrations during subsequent transportation. Summary of the Invention

[0003] The present invention aims to at least solve one of the technical problems existing in the prior art. Therefore, one object of the present invention is to provide a semiconductor device that enables a more stable electrical connection between a power chip and a driver chip.

[0004] According to a semiconductor device of the present invention, the semiconductor device includes: a molding compound having a lateral direction, a longitudinal direction, and a vertical direction, the lateral direction, the longitudinal direction, and the vertical direction being perpendicular to each other; a substrate at least partially disposed within the molding compound, the substrate including power pads on which a power chip is disposed; a driver-side pin frame at least partially disposed within the molding compound and spaced apart on one longitudinal side of the substrate, the driver-side pin frame having a driver-side ground pin, a driver pad on the driver-side ground pin, and a driver chip on the driver pad; the driver-side pin frame further includes a plurality of jumper pins located on one longitudinal side of the driver-side pin frame adjacent to the substrate, the plurality of jumper pins being spaced apart longitudinally between the driver-side ground pin and the substrate, the jumper pins extending laterally and at least one end of the jumper pins being connected to the molding compound along a lateral side edge, the jumper pins being electrically connected to the power chip and the driver chip respectively.

[0005] The specific advantages or beneficial effects of the above scheme are as follows: By setting jumper pins on one side of the drive-side pin frame that is longitudinally adjacent to the substrate, the jumper pins extend laterally and at least one end of the jumper pins is connected to the molding compound, and the jumper pins are electrically connected to the power chip and the driver chip respectively, this arrangement can reduce the arc length of the electrical connection line between the jumper pins and the power chip and the driver chip without increasing the size of the semiconductor device. This can improve the stability and reliability of the electrical connection between the power chip and the driver chip.

[0006] In some examples of the present invention, the power pads include horizontally spaced low-side power pads and high-side power pads, on which low-side power chips and high-side power chips are respectively disposed; the drive-side pin frame includes horizontally spaced low-side drive pads and high-side drive pads, on which low-side drive chips and high-side drive chips are respectively disposed, the low-side drive chips and low-side power chips at least partially corresponding in the vertical direction, and the high-side drive chips and high-side power chips at least partially corresponding in the vertical direction; a plurality of the At least a portion of the jumper pins are electrically connected to the low-side driver chip and the low-side power chip, respectively; at least a portion of the plurality of jumper pins are electrically connected to the high-side driver chip and the high-side power chip, respectively; and / or the plurality of jumper pins include high-side jumper pins, the high-side jumper pins extending laterally and having their two ends connected to the lateral sides of the molding compound, the high-side jumper pins being longitudinally spaced at the sides of the high-side driver pads and the low-side driver pads facing the substrate, and the high-side jumper pins being electrically connected to the high-side driver chip and the high-side power chip, respectively.

[0007] In some examples of the present invention, the high-side power pad is provided with three horizontally spaced high-side power chips, and there are three high-side jumper pins. The three high-side jumper pins are arranged vertically at intervals. The gate pads of the three high-side power chips are electrically connected to the three high-side jumper pins one-to-one. The high-side driver chip is provided with three horizontally spaced high-side driver output pads, and the three high-side driver output pads are electrically connected to the three high-side jumper pins one-to-one. And / or the driver-side pin frame further includes three horizontally spaced high-side driver floating power supply ground pins. The high-side driver chip is also provided with three high-side driver floating ground pads, and the three high-side driver floating ground pads are electrically connected to the three high-side driver floating power supply ground pins one-to-one. The emitter pads on the three high-side power chips are electrically connected to the three high-side driver floating power supply ground pins one-to-one.

[0008] In some examples of the present invention, the three high-side jumper pins are a first high-side jumper pin, a second high-side jumper pin, and a third high-side jumper pin, which are longitudinally spaced apart. Compared to the second high-side jumper pin, the first high-side jumper pin is closer to the substrate in the longitudinal direction. A first jumper pad, a second jumper pad, and a third jumper pad are respectively provided on the first high-side jumper pin, the second high-side jumper pin, and the third high-side jumper pin. The first jumper pad, the second jumper pad, and the third jumper pad are electrically connected to the first high-side power chip, the second high-side power chip, and the third high-side power chip, respectively. The side of the molding compound that is laterally adjacent to the high-side power pad is defined as the high-side boundary. The first jumper pad is located on the portion of the first high-side jumper pin adjacent to the high-side boundary and corresponds longitudinally to at least a portion of the third high-side power chip. The first jumper pad is longitudinally oriented away from the substrate relative to the other portions of the first high-side jumper pin. The system features a protruding configuration. The vertical projections of the first, second, and third jumper pads are defined as the first jumper pad projection, the second jumper pad projection, and the third jumper pad projection, respectively. The second jumper pad projection is spaced apart from the first jumper pad projection on the side laterally opposite to the high-side boundary and protrudes at least partially toward the first high-side jumper pin in the vertical direction. The vertical projection of the high-side driver chip is defined as the high-side driver chip projection, and the vertical projection of the high-side driver pad is defined as the high-side driver pad projection. The third jumper pad projection is spaced apart on the side laterally opposite to the first jumper pad projection of the second jumper pad projection, and on the side laterally opposite to the second jumper pad projection of the high-side driver chip projection. The high-side driver pad projection covers the third jumper pad projection, and the third jumper pad protrudes vertically toward the high-side driver pad relative to the other portions of the third high-side jumper pin.

[0009] In some examples of the present invention, the three high-side drive floating power supply ground pins are a first high-side drive floating power supply ground pin, a second high-side drive floating power supply ground pin, and a third high-side drive floating power supply ground pin, which are horizontally spaced apart. The first high-side drive floating power supply ground pin is horizontally closer to the low-side drive pad than the second high-side drive floating power supply ground pin. The three high-side power chips are a first high-side power chip, a second high-side power chip, and a third high-side power chip, which are horizontally spaced apart. The first high-side power chip is horizontally closer to the low-side power pad than the second high-side power chip. The side-driven floating power supply ground pin includes a first pin segment, a second pin segment, and a third pin segment. The first and second pin segments extend vertically, with the second pin segment connected to the end of the first pin segment vertically adjacent to the substrate. The second pin segment has a wider lateral width than the first pin segment. The third pin segment extends horizontally, with its end laterally away from the low-side drive pad connected between the first and second pin segments. The emitter pad of the first high-side power chip is connected to the second pin segment, and the high-side drive chip is connected to the first pin segment. The second high-side drive floating power supply ground pin... It includes a fourth pin segment, a fifth pin segment, and a sixth pin segment. The fourth and sixth pin segments both extend vertically. The sixth pin segment is laterally spaced on the side of the fourth pin segment facing the low-side drive pad. The sixth pin segment is also longitudinally spaced on the side of the fourth pin segment facing the substrate. The fifth pin segment connects the fourth and sixth pin segments. The lateral width of the sixth pin segment is greater than the longitudinal width of the fifth pin segment. The emitter pad of the second high-side power chip is electrically connected to the end of the sixth pin segment longitudinally adjacent to the substrate. The high-side drive chip... The sixth pin segment is electrically connected at one end that is longitudinally away from the substrate; the third high-side drive floating power supply ground pin includes a seventh pin segment, an eighth pin segment, and a ninth pin segment. The seventh pin segment extends longitudinally, and the ninth pin segment extends laterally and is spaced laterally at the side of the seventh pin segment facing the low-side drive pad. The ninth pin segment is spaced longitudinally at the side of the seventh pin segment facing the substrate. The eighth pin segment is connected between the seventh pin segment and the ninth pin segment. The emitter pad of the third high-side power chip is electrically connected to the eighth pin segment, and the high-side drive chip is electrically connected to the ninth pin segment.

[0010] In some examples of the present invention, the driver-side pin frame further includes a first high-side driver floating power supply voltage pin, a second high-side driver floating power supply voltage pin, and a third high-side driver floating power supply voltage pin arranged laterally at intervals. The first pin segment is arranged laterally at intervals between the first high-side driver floating power supply voltage pin and the second high-side driver floating power supply voltage pin. The second pin segment is arranged laterally at intervals on the side of the high-side driver pad opposite to the low-side driver pad. The third pin segment is arranged vertically at intervals between the high-side driver pad and the first high-side driver floating power supply voltage pin. The fourth pin segment is arranged laterally at intervals between the first high-side driver floating power supply voltage pin and the second high-side driver floating power supply voltage pin. Between the second high-side drive floating power supply voltage pin and the third high-side drive floating power supply voltage pin, the fifth pin segment and the sixth pin segment are longitudinally spaced apart on the side of the second high-side drive floating power supply voltage pin facing the substrate; the third high-side drive floating power supply voltage pin includes a main body segment and an extension segment, the main body segment is provided with a bootstrap chip pad, the main body segment is laterally spaced between the fourth pin segment and the seventh pin segment, the extension segment extends laterally and is connected to the main body segment at one end that is laterally away from the low-side drive pad, and the extension segment is longitudinally spaced between the fifth pin segment and the ninth pin segment.

[0011] In some examples of the present invention, the plurality of jumper pins include low-side jumper pins, wherein the side of the molding compound laterally adjacent to the low-side power pad is defined as the low-side boundary and the side laterally adjacent to the high-side power pad is defined as the high-side boundary, one lateral end of the low-side jumper pin is connected to the low-side boundary and the other lateral end is spaced apart from the high-side boundary, the gate pad of the low-side power chip is electrically connected to the low-side jumper pin, and the low-side driver chip is electrically connected to the low-side jumper pin; and / or there are three low-side power pads, which are spaced apart laterally, and low-side power chips are respectively disposed on the three low-side power pads, there are three low-side jumper pins, which are spaced apart vertically, and the three low-side jumper pins are respectively electrically connected to the gate pads of the three low-side power chips in a one-to-one correspondence, and the low-side driver chip is provided with three laterally spaced low-side driver output pads, and the three low-side jumper pins are respectively electrically connected to the three low-side driver output pads.

[0012] In some examples of the present invention, the high-side drive pad is connected to the low-side drive pad, and in the longitudinal direction, the high-side drive pad protrudes at least partially relative to the side of the low-side drive pad facing the substrate. The three low-side jumper pins are all spaced apart on the side of the low-side drive pad facing the substrate in the longitudinal direction. The portion of the high-side drive pad that protrudes in the longitudinal direction relative to the side of the low-side drive pad facing the substrate is defined as a protrusion. The low-side jumper pins are spaced apart on the side of the protrusion that faces the low-side boundary in the transverse direction.

[0013] In some examples of the present invention, the three high-side jumper pins are spaced apart on the side of the high-side drive pad facing the substrate longitudinally, and the three low-side jumper pins are spaced apart longitudinally between the low-side drive pad and the three high-side jumper pins.

[0014] In some examples of the present invention, the side of the driver chip that is vertically opposite to the driver pad is the upper side of the driver chip, and the side of the power chip that is vertically opposite to the power pad is the upper side of the power chip. The height difference between the upper side of the driver chip and the upper side of the power chip in the vertical direction is set to d, where d satisfies the relationship: d > 2.3 mm; and / or the lateral dimension of the molding compound is set to L, where L satisfies the relationship: L < 35.6 mm.

[0015] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 2 This is a partial schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 3 This is a partial schematic diagram of a semiconductor device according to an embodiment of the present invention; Figure 4 This is a partial cross-sectional view of a semiconductor device according to an embodiment of the present invention.

[0017] Figure label: 100. Semiconductor devices; 10. Molded enclosure; 11. Low side boundary; 12. High side boundary; 20. Substrate; 21. High-side power pad; 211. High-side power chip; 22. Low-side power pad; 221. Low-side power chip; 23. Gate pad; 24. Emitter pad; 30. Driver-side pin frame; 31. High-side driver pad; 311. High-side driver chip; 312. Protrusion; 32. Low-side driver pad; 321. Low-side driver chip; 33. Jumper pin; 331. High-side jumper pin; 332. Low-side jumper pin; 40. First high-side drive floating power supply ground pin; 401. First pin segment; 402. Second pin segment; 403. Third pin segment; 41. Second high-side drive floating power supply ground pin; 411. Fourth pin segment; 412. Fifth pin segment; 413. Sixth pin segment; 42. Third high-side drive floating power supply ground pin; 421. Seventh pin segment; 422. Eighth pin segment; 423. Ninth pin segment.

[0018] 50. First high-side drive floating power supply voltage pin; 51. Second high-side drive floating power supply voltage pin; 53. Third high-side drive floating power supply voltage pin; 531. Main body; 532. Extension. Detailed Implementation

[0019] The following is for reference. Figures 1-4 A semiconductor device 100 according to an embodiment of the present invention is described. The semiconductor device 100 can be applied to a circuit board assembly, the circuit board assembly can be applied to an electrical control box, and the electrical control box can be applied to an electrical device.

[0020] Combination Figures 1-4 As shown, the semiconductor device 100 according to the present invention mainly includes: a molding compound 10, a substrate 20, and a drive-side pin frame 30. The substrate 20 is at least partially disposed within the molding compound 10. The substrate 20 may be completely encapsulated by the molding compound 10, or it may be partially encapsulated and partially exposed on the surface of the molding compound 10. The drive-side pin frame 30 is at least partially disposed within the molding compound 10, and partially extends out of the molding compound 10 for electrical connection with external components. The molding compound 10 protects the substrate 20 and the drive-side pin frame 30 within the semiconductor device 100, ensuring their stable placement and providing electrical insulation from external sources, thus guaranteeing the structural reliability of the semiconductor device 100. It should be noted that the pins of the drive-side pin frame 30 are spaced apart to ensure electrical isolation between them, and the longitudinal dimensions of the portions of the pins extending out of the molding compound 10 are inconsistent; this will not be elaborated further here.

[0021] It should be noted that, in one embodiment of the present invention, a small portion of the drive-side pin frame 30 extends longitudinally and is connected to the substrate 20, while the majority of the drive-side pin frame 30 is longitudinally spaced apart from the substrate 20.

[0022] In another embodiment of the present invention, a small portion of the substrate 20 extends longitudinally into the drive-side pin frame 30, while the majority of the substrate 20 is longitudinally spaced apart from the drive-side pin frame 30.

[0023] In another embodiment of the present invention, the substrate 20 and the drive-side pin frame 30 are completely separated from each other in the longitudinal direction.

[0024] It should be noted that the encapsulated body 10 has a horizontal, vertical and a longitudinal direction, and the horizontal, vertical and a longitudinal direction are perpendicular to each other.

[0025] Furthermore, the substrate 20 includes power pads on which power chips are disposed. The drive-side pin frame 30 has drive-side ground pins on which drive-side ground pins are disposed, and drive chips are disposed on the drive pads. The signal connection between the power chip and the drive chip needs to be fixed by soldering to the corresponding pads on the power chip and the drive chip respectively through electrical connection lines. Due to the structural design of the semiconductor device 100, the drive-side pin frame 30 needs to be set vertically higher than the substrate 20 so that the drive chip is away from the high-temperature area of ​​the power chip, thereby improving the heat dissipation effect. At the same time, it increases the electrical clearance and creepage distance, reduces the risk of high voltage interference and crosstalk, and improves the stability of drive control and system safety.

[0026] Furthermore, the side of the driver chip facing away from the driver pad in the vertical direction is defined as the upper side of the driver chip, and the side of the power chip facing away from the power pad in the vertical direction is defined as the upper side of the power chip. If the two ends of the electrical connection wire are directly soldered to the upper side of the driver chip and the upper side of the power chip respectively, the electrical connection wire will form a curved arc shape. The height difference between the upper side of the driver chip and the upper side of the power chip in the vertical direction is defined as d. When d > 2.3mm, the arc length of the electrical connection wire will be large. Not only will the vibration during transportation after the electrical connection is completed cause the electrical connection wire to deform and the solder joint of the electrical connection wire to break, but the flow of the molding compound during the molding process will also cause the electrical connection wire to break, thereby causing a short circuit inside the semiconductor device 100.

[0027] Therefore, in this embodiment of the invention, by providing a plurality of jumper pins 33 on one side of the drive pin frame adjacent to the substrate 20 in the longitudinal direction, and by making the plurality of jumper pins 33 spaced apart in the longitudinal direction between the drive-side ground pin and the substrate 20, when the jumper pins 33 are electrically connected to the power chip and the drive chip respectively through electrical connection lines, the arc length of the electrical connection line between the power chip and the jumper pins 33 is shorter, and the arc length of the electrical connection line between the drive chip and the jumper pins 33 is also shorter. This can improve the stability of the electrical connection between the power chip and the jumper pins 33, and can also improve the stability of the electrical connection between the drive chip and the power chip, thereby improving the structural reliability of the semiconductor device 100.

[0028] Furthermore, the jumper pin 33 extends laterally, and at least one end of the jumper pin 33 is connected to the side of the molding compound 10 along the lateral direction. With this configuration, the jumper pin 33 will not occupy the lateral dimension of the drive-side pin frame 30, so that the lateral dimension of the semiconductor device 100 remains unchanged. Furthermore, even if the jumper pin 33 occupies the longitudinal dimension of the drive-side pin frame 30, causing the longitudinal dimension of the drive-side pin frame 30 to increase, as long as the longitudinal dimension of the substrate 20 is reasonably reduced accordingly, the longitudinal dimension of the semiconductor device 100 will not change. This ensures that the size of the semiconductor device 100 does not increase while improving the structural reliability of the semiconductor device 100.

[0029] In some embodiments of the present invention, the lateral dimension of the molding compound 10 is set to L, where L satisfies the relationship: L < 35.6 mm It should be noted that the power chip can be composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode (FRD), or it can be a metal-oxide-semiconductor field-effect transistor (MOS), or it can be a reverse-conducting IGBT that integrates the IGBT and the freewheeling diode into a single chip, etc.

[0030] Combination Figures 1-3As shown, the power pads include horizontally spaced low-side power pads 22 and high-side power pads 21. Low-side power chips 221 and high-side power chips 211 are respectively disposed on the low-side power pads 22 and 21. The driver-side pin frame 30 includes horizontally spaced low-side driver pads 32 and high-side driver pads 31. Low-side driver chips 321 and high-side driver chips 311 are respectively disposed on the low-side driver pads 32 and 31. The low-side driver chips 321 and low-side power chips 221 are at least partially opposite each other in the vertical direction. The high-side driver chip 311 and the high-side power chip 211 are at least partially corresponding in the vertical direction. There are multiple jumper pins 33, at least some of which are electrically connected to the low-side driver chip 321 and the low-side power chip 221 respectively. At least some of which are electrically connected to the high-side driver chip 311 and the high-side power chip 211 respectively. This can ensure that the electrical connection between the high-side driver chip 311 and the high-side power chip 211, as well as the electrical connection between the low-side driver chip 321 and the low-side power chip 221, are both stable.

[0031] Combination Figures 1-3 As shown, the plurality of jumper pins 33 include a high-side jumper pin 331. The high-side jumper pin 331 extends laterally and its two ends are respectively connected to the two sides of the lateral side of the molding compound 10. The high-side jumper pin 331 is arranged longitudinally at intervals on the side of the high-side drive pad 31 and the low-side drive pad 32 facing the substrate 20. The high-side jumper pin 331 is electrically connected to the high-side drive chip 311 and the high-side power chip 211 respectively.

[0032] Specifically, the signal connection between the high-side power chip 211 and the high-side driver chip 311 requires not only an electrical connection between the gate pad 23 of the high-side power chip 211 and the high-side driver chip 311, but also an electrical connection between the emitter pad 24 of the high-side power chip 211 and the high-side driver chip 311. Therefore, the high-side jumper pin 331 is designed to extend laterally, and its two lateral ends are connected to the two lateral sides of the molding compound 10, respectively. In this way, the high-side driver chip 311 and the high-side power chip 211 are connected by electrical wires. When electrically connected to the high-side jumper pin 331, the position of the electrical connection line can be reasonably set to avoid the electrical connection line between the emitter pad 24 of the high-side driver chip 311 and the driver chip. This setting can prevent the electrical connection line between the gate pad 23 of the high-side power chip 211 and the high-side driver chip 311 from interfering with each other and the electrical connection line between the emitter pad 24 of the high-side power chip 211 and the high-side driver chip 311. This can further improve the stability and reliability of the electrical connection between the high-side power chip 211 and the high-side driver chip 311.

[0033] Furthermore, the two lateral ends of the high-side jumper pin 331 are connected to the two lateral sides of the molding compound 10 respectively. This can improve the stability and reliability of the high-side jumper pin 331 in the molding compound 10, thereby improving the stability and reliability of the electrical connection between the electrical connection wire and the high-side jumper pin 331.

[0034] Combination Figures 1-3 As shown, three horizontally spaced high-side power chips 211 are disposed on the high-side power pad 21, and there are three high-side jumper pins 331. The three high-side jumper pins 331 are arranged vertically at intervals. The gate pads 23 of the three high-side power chips 211 are electrically connected to the three high-side jumper pins 331 one by one. The high-side driver chip 311 is disposed on three horizontally spaced high-side driver output pads, and the three high-side driver output pads are electrically connected to the three high-side jumper pins 331 one by one. This makes the electrical connection between the three high-side power chips 211 and the high-side driver chip 311 relatively independent. This not only ensures the stability of the electrical connection between each high-side power chip 211 and the high-side driver chip 311, but also prevents the electrical connection lines between the three high-side power chips 211 and the high-side driver chip 311 from interfering with each other.

[0035] Combination Figures 1-3 As shown, the driver-side pin frame 30 also includes three horizontally spaced high-side driver floating power supply ground pins. The high-side driver chip 311 is also provided with three high-side driver floating ground pads. The three high-side driver floating ground pads are electrically connected to the three high-side driver floating power supply ground pins one by one. The emitter pads 24 on the three high-side power chips 211 are electrically connected to the three high-side driver floating power supply ground pins one by one.

[0036] Specifically, the high-side driver floating power supply ground pin is a common pin in the existing driver-side pin frame 30. In the prior art, the high-side driver floating power supply ground pin is electrically connected to the high-side driver chip 311 to provide a floating reference ground with the same potential as the power transistor source of the high-side driver circuit. By electrically connecting the emitter pad 24 of the high-side power chip 211 to the high-side driver floating power supply ground pin, the high-side driver chip 311 is still electrically connected to the high-side driver floating power supply ground pin. While ensuring the original function of the high-side driver floating power supply ground pin, the arc length of the electrical connection line between the emitter pad 24 of the high-side power chip 211 and the high-side driver floating power supply ground pin is smaller. The arc length of the electrical connection line between the high-side driver floating power supply ground pin and the high-side driver chip 311 is smaller, which can improve the stability and reliability of the electrical connection between the emitter pad 24 of the high-side power chip 211 and the high-side driver chip 311.

[0037] In addition, this also allows the removal of the pads on the high-side driver chip 311 that are directly electrically connected to the high-side power chip 211. Only the high-side driver floating ground pad needs to be set to achieve electrical connection between the high-side driver chip 311, the high-side driver floating power supply ground pin, and the emitter pad 24 of the high-side power chip 211. In this way, the layout of the pads on the high-side driver chip 311 will not be too compact, and the reliability of the electrical connection between the pads and the electrical connection lines on the high-side driver chip 311 can be improved.

[0038] Combination Figure 1 and Figure 2 As shown, the three high-side jumper pins 331 are a first high-side jumper pin 331, a second high-side jumper pin 331, and a third high-side jumper pin 331, which are longitudinally spaced apart. Compared with the second high-side jumper pin 331, the first high-side jumper pin 331 is closer to the substrate 20 in the longitudinal direction. The first high-side jumper pin 331, the second high-side jumper pin 331, and the third high-side jumper pin 331 are respectively provided with a first jumper pad, a second jumper pad, and a third jumper pad. The first jumper pad, the second jumper pad, and the third jumper pad are electrically connected to the first high-side power chip 211, the second high-side power chip 211, and the third high-side power chip 211, respectively. The side of the molding compound 10 that is laterally adjacent to the high-side power pad 21 is defined as the high-side boundary 12. The first jumper pad is disposed on the portion of the first high-side jumper pin 331 adjacent to the high-side boundary 12 and corresponds longitudinally to at least a portion of the third high-side power chip 211. The first jumper pad protrudes longitudinally toward the side away from the substrate 20 relative to the other portion of the first high-side jumper pin 331. The orthographic projections of the first jumper pad, the second jumper pad, and the third jumper pad in the longitudinal direction are defined as the first jumper pad projection, the second jumper pad projection, and the third jumper pad projection, respectively. The second jumper pad projection is spaced apart from the side of the first jumper pad projection that is laterally away from the high-side boundary 12 and protrudes longitudinally at least partially toward the first high-side jumper pin 331. The orthographic projection of the high-side driver chip 311 in the vertical direction is defined as the high-side driver chip 311 projection, and the orthographic projection of the high-side driver pad 31 in the vertical direction is defined as the high-side driver pad 31 projection. The projection of the third jumper pad is spaced apart from the projection of the second jumper pad on the side that is laterally opposite to the projection of the first jumper pad. The projection of the third jumper pad is also spaced apart from the projection of the high-side driver chip 311 on the side that is laterally opposite to the projection of the second jumper pad. The projection of the high-side driver pad 31 covers the projection of the third jumper pad. The third jumper pad protrudes in the vertical direction toward the high-side driver pad 31 relative to the other parts of the third high-side jumper pin 331.

[0039] By setting the jumper pads of the first high-side power chip 211, the second high-side power chip 211, and the third high-side power chip 211 to be electrically connected to the first high-side jumper pin 331, the second high-side jumper pin 331, and the third high-side jumper pin 331, respectively, the electrical connection wires between the power chips and the high-side jumper pins 331 will not affect the electrical connection wires between the high-side driver chip 311 and other components, thereby improving the stability of the semiconductor device 100.

[0040] In some embodiments of the present invention, functional pins in the drive-side pin frame 30 extend from the longitudinal side of the molded body 10 adjacent to the drive-side pin frame 30 and connect to external devices to perform functions. Pins in the drive-side pin frame 30 that are connected to at least one side of the molded body 10 in the lateral direction, such as high-side jumper pin 331 and low-side jumper pin 332, are high-voltage pins. The high-voltage pins need to be insulated at the ends that are connected to the molded body 10 in the lateral direction to prevent high-side jumper pin 331 and low-side jumper pin 332 from extending out of the molded body 10.

[0041] Combination Figures 1-3As shown, the three high-side driver floating power supply ground pins are, in order, a first high-side driver floating power supply ground pin 40, a second high-side driver floating power supply ground pin 41, and a third high-side driver floating power supply ground pin 42. The first high-side driver floating power supply ground pin 40 is laterally closer to the low-side driver pad 32 than the second high-side driver floating power supply ground pin 41. The three high-side power chips 211 are, in order, a first high-side power chip 211, a second high-side power chip 211, and a third high-side power chip 211. The first high-side power chip 211 is laterally closer to the low-side power pad 22 than the second high-side power chip 211. The floating power supply ground pin 40 includes a first pin segment 401, a second pin segment 402, and a third pin segment 403. The first pin segment 401 and the second pin segment 402 both extend vertically, and the second pin segment 402 is connected to one end of the first pin segment 401 that is vertically adjacent to the substrate 20. The width of the second pin segment 402 in the lateral direction is greater than the width of the first pin segment 401 in the lateral direction. The third pin segment 403 extends horizontally, and one end that is horizontally away from the low-side drive pad 32 is connected between the first pin segment 401 and the second pin segment 402. The emitter pad 24 of the first high-side power chip 211 is connected to the second pin segment 402, and the high-side drive chip 311 is connected to the first pin segment 401.

[0042] This configuration not only allows the second pin segment 402 to be closer to the high-side power chip 211 in the horizontal direction, further improving the stability of the electrical connection between the second pin segment 402 and the high-side power chip 211, but also allows the third pin segment 403 to be closer to the high-side driver chip 311 in the vertical direction, further improving the stability of the electrical connection between the third pin segment 403 and the high-side driver chip 311. Furthermore, it makes the structure between the first high-side driver floating power supply ground pin 40 and the high-side driver pad 31 more compact, improving the space utilization of the driver pin frame.

[0043] Combination Figures 1-3As shown, the second high-side drive floating power supply ground pin 41 includes a fourth pin segment 411, a fifth pin segment 412, and a sixth pin segment 413. The fourth pin segment 411 and the sixth pin segment 413 both extend vertically. The sixth pin segment 413 is spaced laterally on the side of the fourth pin segment 411 facing the low-side drive pad 32. The sixth pin segment 413 is also spaced vertically on the side of the fourth pin segment 411 facing the substrate 20. The fifth pin segment 412 is connected between the fourth pin segment 411 and the sixth pin segment 413. The width of the sixth pin segment 413 in the lateral direction is greater than the width of the fifth pin segment 412 in the longitudinal direction. The emitter pad 24 of the second high-side power chip 211 is electrically connected to the end of the sixth pin segment 413 that is vertically adjacent to the substrate 20. The high-side drive chip 311 is electrically connected to the end of the sixth pin segment 413 that is vertically away from the substrate 20.

[0044] This configuration not only ensures that the sixth pin segment 413 is closer to the high-side driving chip 311 laterally, but also that the end of the sixth pin segment 413 adjacent to the substrate 20 is closer to the high-side power chip 211. By electrically connecting the end of the sixth pin segment 413 adjacent to the substrate 20 to the high-side power chip 211 and the end of the sixth pin segment 413 away from the substrate 20 to the high-side driving chip 311, the electrical connection between the high-side driving chip 311 and the high-side power chip 211 and the sixth pin segment 413 can be kept stable and reliable. This also ensures that the electrical connection lines between the high-side driving chip 311 and the sixth pin segment 413, as well as the electrical connection lines between the high-side power chip 211 and the sixth pin segment 413, are spaced apart and do not interfere with each other.

[0045] Combination Figures 1-3 As shown, the third high-side drive floating power supply ground pin 42 includes a seventh pin segment 421, an eighth pin segment 422, and a ninth pin segment 423. The seventh pin segment 421 extends vertically, and the ninth pin segment 423 extends horizontally and is spaced laterally on the side of the seventh pin segment 421 facing the low-side drive pad 32. The ninth pin segment 423 is spaced vertically on the side of the seventh pin segment 421 facing the substrate 20. The eighth pin segment 422 is connected between the seventh pin segment 421 and the ninth pin segment 423. The emitter pad 24 of the third high-side power chip 211 is electrically connected to the eighth pin segment 422, and the high-side drive chip 311 is electrically connected to the ninth pin segment 423.

[0046] This configuration allows the ninth pin segment 423 to be more laterally adjacent to the high-side driver chip 311. Connecting one end of the ninth pin segment 423 laterally adjacent to the high-side driver pad 31 to the high-side driver chip 311 electrically results in a shorter electrical connection line between the ninth pin segment 423 and the high-side driver pad 31, thus improving the stability of the electrical connection between the ninth pin segment 423 and the high-side driver pad 31.

[0047] Combination Figures 1-3 As shown, the driver-side pin frame 30 also includes a first high-side driver floating power supply voltage pin 50, a second high-side driver floating power supply voltage pin 51, and a third high-side driver floating power supply voltage pin 53 arranged horizontally at intervals. The first pin segment 401 is arranged horizontally at intervals between the first high-side driver floating power supply voltage pin 50 and the second high-side driver floating power supply voltage pin 51. The second pin segment 402 is arranged horizontally at intervals on the side of the high-side driver pad 31 facing away from the low-side driver pad 32. The third pin segment 403 is arranged vertically at intervals between the high-side driver pad 31 and the first high-side driver floating power supply voltage pin 50. This makes the structure between the first high-side driver floating power supply voltage pin 50, the first high-side driver floating power supply ground pin 40, and the high-side driver pad 31 more compact, which can improve the space utilization of the driver-side pin frame 30.

[0048] Combination Figures 1-3 As shown, the fourth pin segment 411 is horizontally spaced between the second high-side drive floating power supply voltage pin 51 and the third high-side drive floating power supply voltage pin 53. The fifth pin segment 412 and the sixth pin segment 413 are vertically spaced on the side of the second high-side drive floating power supply voltage pin 51 facing the substrate 20. The third high-side drive floating power supply voltage pin 53 includes a main body segment and an extension segment. The main body segment is provided with a bootstrap chip pad. The main body segment is horizontally spaced between the fourth pin segment 411 and the seventh pin segment 421. The extension segment extends horizontally and is connected to the main body segment at one end that is horizontally away from the low-side drive pad 32. The extension segment is vertically spaced between the fifth pin segment 412 and the ninth pin segment 423.

[0049] Combination Figures 1-3As shown, the multiple jumper pins 33 include a low-side jumper pin 332. The side of the molding compound 10 that is laterally adjacent to the low-side power pad 22 is defined as the low-side boundary 11, and the side that is laterally adjacent to the high-side power pad 21 is defined as the high-side boundary 12. One lateral end of the low-side jumper pin 332 is connected to the low-side boundary 11, and the other lateral end is spaced apart from the high-side boundary 12. The gate pad 23 of the low-side power chip 221 is electrically connected to the low-side jumper pin 332, and the low-side driver chip 321 is electrically connected to the low-side jumper pin 332. This allows the low-side jumper pin 332 to be closer to the low-side driver chip 321, which can increase the arc length of the electrical connection line between the low-side jumper pin 332 and the low-side driver chip 321, thereby improving the stability and reliability of the electrical connection between the low-side jumper pin 332 and the low-side driver chip 321.

[0050] Furthermore, since the low-side power chip 221 only needs to connect the gate pad 23 to the low-side jumper pin 332, it is only necessary to connect one lateral end of the low-side jumper pin 332 to the low-side boundary 11 and the other lateral end to the high-side boundary 12 at intervals. This not only makes the low-side jumper pin 332 correspond to the low-side power chip 221 in the vertical direction, which facilitates the electrical connection between the low-side power chip 221 and the low-side jumper pin 332, but also prevents the lateral length of the low-side jumper pin 332 from being too large, which can further improve the structural reliability of the low-side jumper pin 332.

[0051] Combination Figures 1-3 As shown, there are three low-side power pads 22, which are spaced apart horizontally. A low-side power chip 221 is disposed on each of the three low-side power pads 22. There are three low-side jumper pins 332, which are spaced apart vertically. The three low-side jumper pins 332 are electrically connected to the gate pads 23 of the three low-side power chips 221 respectively. The low-side driver chip 321 is provided with three horizontally spaced low-side driver output pads, and the three low-side jumper pins 332 are electrically connected to the three low-side driver output pads respectively.

[0052] Combination Figure 1 As shown, the high-side drive pad 31 is connected to the low-side drive pad 32. In the vertical direction, the high-side drive pad 31 protrudes at least partially relative to the side of the low-side drive pad 32 facing the substrate 20. The three low-side jumper pins 332 are all spaced apart on the side of the low-side drive pad 32 facing the substrate 20 in the vertical direction. The part of the high-side drive pad 31 that protrudes relative to the side of the low-side drive pad 32 facing the substrate 20 in the vertical direction is defined as the protrusion 312. The low-side jumper pins 332 are spaced apart on the side of the protrusion 312 facing the low-side boundary 11 in the horizontal direction.

[0053] Specifically, by connecting the high-side drive pad 31 to the low-side drive pad 32, and making the high-side drive pad 31 at least partially protrude relative to the low-side drive pad 32 on the side facing the substrate 20, the high-side drive pad 31 can avoid the self-owned chip and corresponding pins. On the other hand, the heat dissipation distribution of the high-side drive chip 311, the low-side drive chip 321 and the self-owned chip is more uniform, preventing the heat from being too concentrated and improving the heat dissipation performance of the semiconductor device 100.

[0054] Furthermore, by positioning the low-side jumper pins 332 at intervals on the side of the low-side drive pad 32 facing the substrate 20 longitudinally, and the low-side jumper pins 332 at intervals on the side of the protrusion 312 facing the low-side boundary 11 laterally, the low-side jumper pins 332 can fully utilize the groove formed by the high-side drive pad 31 and the low-side drive pad 32. This not only brings the low-side jumper pins 332 and the low-side drive chip 321 closer together, but also further reduces the arc length of the electrical connection between the low-side jumper pins 332 and the low-side drive chip 321, thereby further improving the stability and reliability of the electrical connection between the low-side jumper pins 332 and the low-side drive chip 321.

[0055] In addition, this allows the low-side jumper pin 332, the high-side drive pad 31, and the low-side drive pad 32 to be more compact, thereby improving the structural compactness of the drive-side pin frame 30.

[0056] Combination Figures 1-3 As shown, three high-side jumper pins 331 are spaced apart on the side of the high-side drive pad 31 facing the substrate 20 longitudinally, and three low-side jumper pins 332 are spaced apart longitudinally between the low-side drive pad 32 and the three high-side jumper pins 331, which can further improve the structural compactness of the drive-side pin frame 30.

[0057] In some embodiments of the present invention, the electrical connection between the high-side driving chip 311 and the high-side driving floating power supply ground pin is a gold-copper wire, the electrical connection between the high-side driving chip 311 and the high-side jumper pin 331 is a gold-copper wire, the electrical connection between the gate pad 23 of the high-side power chip 211 and the high-side jumper pin 331 is an aluminum wire, and the electrical connection between the emitter pad 24 of the high-side power chip 211 and the high-side driving floating power supply ground pin is an aluminum wire.

[0058] In some embodiments of the present invention, the diameter of the aluminum wire is 5 mil, which is larger than that of the gold-copper wire. This can further reduce the risk of wire arc deformation and molding failure caused by vibration.

[0059] In some embodiments of the present invention, the substrate 20 may include pads and an insulating heat dissipation layer disposed below the pads. The insulating heat dissipation layer is mainly formed by sequentially stacking an insulating resin sheet and a copper layer, or by sequentially stacking an insulating resin sheet and an aluminum layer. The main material of the pads is copper or aluminum. In this case, most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the copper layer or the outer surface of the aluminum layer in the insulating heat dissipation layer of the substrate 20 is exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads, an insulating layer, and a heat dissipation layer formed by sequentially stacking. The main material of the pads is a copper layer or an aluminum layer, the main material of the insulating layer is an AlN, or Al, or SiN, or a ceramic insulating layer composed of several materials, and the main material of the heat dissipation layer is a copper layer or an aluminum layer. In this case, most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the heat dissipation layer of the substrate 20 is exposed from the outer surface of the molding compound 10. Alternatively, the substrate 20 may include pads and an insulating layer disposed below the pads. The main material of the insulating layer is an AlN ceramic insulating layer, or Al... The substrate 20 may be constructed with a ceramic insulating layer or a SiN ceramic insulating layer, in which case most of the substrate 20 is encapsulated by the molding compound 10, and the outer surface of the insulating layer of the substrate 20 is exposed from the outer surface of the molding compound 10; alternatively, the substrate 20 may be formed solely of solder pads, in which case the substrate 20 is disposed within the molding compound 10, and the molding compound 10 completely encapsulates the substrate 20. The specific structural form of the substrate 20 can be adjusted according to the specific requirements and application environment of the semiconductor device 100.

[0060] The circuit board assembly according to the present invention may mainly include the semiconductor device 100 described above. Specifically, since the semiconductor device 100 has a more reliable structure and higher reliability and stability, applying the semiconductor device 100 to the circuit board assembly can prevent short circuits in the circuit board assembly and improve the working performance of the circuit board assembly.

[0061] The electrical control box according to the present invention may mainly include the aforementioned circuit board assembly. Specifically, since the circuit board assembly has a more reliable structure and good working performance, applying the circuit board assembly to the electrical control box can improve the working performance of the electrical control box and extend its service life.

[0062] The electrical device according to the present invention may mainly include: the aforementioned electrical control box. Specifically, since the electrical control box has a more reliable structure and good working performance, applying the electrical control box to the electrical device can improve the working performance and quality of the electrical device.

[0063] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0064] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0065] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A semiconductor device, characterized in that, The semiconductor device (100) includes: A molding compound (10) having a horizontal, a vertical and a longitudinal dimension, wherein the horizontal, the longitudinal and the vertical dimensions are perpendicular to each other; A substrate (20) is at least partially disposed within the molding compound (10), the substrate (20) including power pads on which power chips are disposed; A driving-side pin frame (30) is at least partially disposed within the molding compound (10) and spaced apart on one longitudinal side of the substrate (20). A driving-side ground pin is disposed on the driving-side pin frame (30), a driving pad is disposed on the driving-side ground pin, and a driving chip is disposed on the driving pad. The drive-side pin frame (30) also includes a plurality of jumper pins (33). The plurality of jumper pins (33) are located on one side of the drive-side pin frame (30) that is longitudinally adjacent to the substrate (20). The plurality of jumper pins are longitudinally spaced between the drive-side ground pin and the substrate (20). The jumper pins (33) extend laterally and at least one end of the jumper pins (33) is connected to the molding compound (10) along the lateral side. The jumper pins (33) are electrically connected to the power chip and the drive chip, respectively.

2. The semiconductor device according to claim 1, characterized in that, The power pads include horizontally spaced low-side power pads (22) and high-side power pads (21), and low-side power chips (221) and high-side power chips (211) are respectively disposed on the low-side power pads (22) and the high-side power pads (21). The driving-side pin frame (30) includes horizontally spaced low-side driving pads (32) and high-side driving pads (31). Low-side driving chips (321) and high-side driving chips (311) are respectively disposed on the low-side driving pads (32) and the high-side driving pads (31). The low-side driving chips (321) and the low-side power chips (221) correspond at least partially to each other in the vertical direction. The high-side driving chips (311) and the high-side power chips (211) correspond at least partially to each other in the vertical direction. At least a portion of the plurality of jumper pins (33) are electrically connected to the low-side driver chip (321) and the low-side power chip (221), respectively; and at least a portion of the plurality of jumper pins (33) are electrically connected to the high-side driver chip (311) and the high-side power chip (211), respectively; and / or, The plurality of jumper pins (33) include high-side jumper pins (331), which extend laterally and whose two ends are respectively connected to the two sides of the molded body (10). The high-side jumper pins (331) are arranged longitudinally at intervals on the side of the high-side drive pad (31) and the low-side drive pad (32) facing the substrate (20). The high-side jumper pins (331) are electrically connected to the high-side drive chip (311) and the high-side power chip (211) respectively.

3. The semiconductor device according to claim 2, characterized in that, The high-side power pad (21) is provided with three horizontally spaced high-side power chips (211), and there are three high-side jumper pins (331). The three high-side jumper pins (331) are arranged vertically at intervals. The gate pads (23) of the three high-side power chips (211) are electrically connected to the three high-side jumper pins (331) one by one. The high-side driver chip (311) is provided with three horizontally spaced high-side driver output pads, and the three high-side driver output pads are electrically connected to the three high-side jumper pins (331) one by one; and / or, The driving-side pin frame (30) also includes three horizontally spaced high-side driving floating power supply ground pins. The high-side driving chip (311) is also provided with three high-side driving floating ground pads. The three high-side driving floating ground pads are electrically connected to the three high-side driving floating power supply ground pins one by one. The emitter pads (24) on the three high-side power chips (211) are electrically connected to the three high-side driving floating power supply ground pins one by one.

4. The semiconductor device according to claim 3, characterized in that, The three high-side jumper pins (331) are a first high-side jumper pin (331), a second high-side jumper pin (331), and a third high-side jumper pin (331) that are longitudinally spaced apart. Compared with the second high-side jumper pin (331), the first high-side jumper pin (331) is closer to the substrate (20) in the longitudinal direction. The first high-side jumper pin (331), the second high-side jumper pin (331), and the third high-side jumper pin (331) are respectively provided with a first jumper pad, a second jumper pad, and a third jumper pad. The first jumper pad, the second jumper pad, and the third jumper pad are electrically connected to the first high-side power chip (211), the second high-side power chip (211), and the third high-side power chip (211), respectively. The side of the molding compound (10) that is laterally adjacent to the high-side power pad (21) is defined as the high-side boundary (12). The first jumper pad is disposed on the portion of the first high-side jumper pin (331) adjacent to the high-side boundary (12) and corresponds longitudinally to at least a portion of the third high-side power chip (211). The first jumper pad protrudes longitudinally toward the side away from the substrate (20) relative to the other portion of the first high-side jumper pin (331). The orthogonal projections of the first jumper pad, the second jumper pad, and the third jumper pad in the longitudinal direction are defined as the first jumper pad projection, the second jumper pad projection, and the third jumper pad projection, respectively. The second jumper pad projection is spaced apart from the side of the first jumper pad projection that is laterally away from the high-side boundary (12) and protrudes longitudinally at least partially toward the first high-side jumper pin (331). The vertical projection of the high-side driver chip (311) is defined as the high-side driver chip (311) projection, and the vertical projection of the high-side driver pad (31) is defined as the high-side driver pad (31) projection. The projection of the third jumper pad is spaced apart from the projection of the second jumper pad on the side that is laterally opposite to the projection of the first jumper pad. The projection of the third jumper pad is spaced apart from the projection of the high-side driver chip (311) on the side that is laterally opposite to the projection of the second jumper pad. The projection of the high-side driver pad (31) covers the projection of the third jumper pad. The third jumper pad protrudes from the other part of the third high-side jumper pin (331) towards the high-side driver pad (31) in the vertical direction.

5. The semiconductor device according to claim 3, characterized in that, The three high-side drive floating power supply ground pins are a first high-side drive floating power supply ground pin (40), a second high-side drive floating power supply ground pin (41), and a third high-side drive floating power supply ground pin (42) that are horizontally spaced apart. The first high-side drive floating power supply ground pin (40) is horizontally closer to the low-side drive pad (32) than the second high-side drive floating power supply ground pin (41). The three high-side power chips (211) are a first high-side power chip (211), a second high-side power chip (211), and a third high-side power chip (211) that are horizontally spaced apart. The first high-side power chip (211) is horizontally closer to the low-side power pad (22) than the second high-side power chip (211). The first high-side driving floating power supply ground pin (40) includes a first pin segment (401), a second pin segment (402) and a third pin segment (403). The first pin segment (401) and the second pin segment (402) both extend in the longitudinal direction and the second pin segment (402) is connected to one end of the first pin segment (401) that is longitudinally adjacent to the substrate (20). The width of the second pin segment (402) in the lateral direction is greater than the width of the first pin segment (401) in the lateral direction. The third pin segment (403) extends in the lateral direction and one end that is laterally away from the low-side driving pad (32) is connected between the first pin segment (401) and the second pin segment (402). The emitter pad (24) of the first high-side power chip (211) is connected to the second pin segment (402), and the high-side driving chip (311) is connected to the first pin segment (401). The second high-side drive floating power supply ground pin (41) includes a fourth pin segment (411), a fifth pin segment (412), and a sixth pin segment (413). The fourth pin segment (411) and the sixth pin segment (413) both extend vertically. The sixth pin segment (413) is laterally spaced on the side of the fourth pin segment (411) facing the low-side drive pad (32). The sixth pin segment (413) is longitudinally spaced on the side of the fourth pin segment (411) facing the substrate (20). The fifth pin segment (412) is connected between the fourth pin segment (411) and the sixth pin segment (413). The width of the sixth pin segment (413) in the lateral direction is greater than the width of the fifth pin segment (412) in the longitudinal direction. The emitter pad (24) of the second high-side power chip (211) is electrically connected to the end of the sixth pin segment (413) that is longitudinally adjacent to the substrate (20). The high-side driving chip (311) is electrically connected to the end of the sixth pin segment (413) that is longitudinally away from the substrate (20). The third high-side drive floating power supply ground pin (42) includes a seventh pin segment (421), an eighth pin segment (422), and a ninth pin segment (423). The seventh pin segment (421) extends vertically, and the ninth pin segment (423) extends horizontally and is spaced horizontally on the side of the seventh pin segment (421) facing the low-side drive pad (32). The ninth pin segment (423) is spaced vertically on the side of the seventh pin segment (421) facing the substrate (20). The eighth pin segment (422) is connected between the seventh pin segment (421) and the ninth pin segment (423). The emitter pad (24) of the third high-side power chip (211) is electrically connected to the eighth pin segment (422), and the high-side drive chip (311) is electrically connected to the ninth pin segment (423).

6. The semiconductor device according to claim 5, characterized in that, The driving-side pin frame (30) further includes a first high-side driving floating power supply voltage pin (50), a second high-side driving floating power supply voltage pin (51) and a third high-side driving floating power supply voltage pin (53) arranged horizontally in sequence. The first pin segment (401) is arranged horizontally between the first high-side driving floating power supply voltage pin (50) and the second high-side driving floating power supply voltage pin (51). The second pin segment (402) is arranged horizontally on the side of the high-side driving pad (31) facing away from the low-side driving pad (32). The third pin segment (403) is arranged vertically between the high-side driving pad (31) and the first high-side driving floating power supply voltage pin (50). The fourth pin segment (411) is horizontally spaced between the second high-side drive floating power supply voltage pin (51) and the third high-side drive floating power supply voltage pin (53), and the fifth pin segment (412) and the sixth pin segment (413) are vertically spaced on the side of the second high-side drive floating power supply voltage pin (51) facing the substrate (20). The third high-side drive floating power supply voltage pin (53) includes a main body segment and an extension segment. The main body segment is provided with a bootstrap chip pad. The main body segment is horizontally spaced between the fourth pin segment (411) and the seventh pin segment (421). The extension segment extends horizontally and is connected to the main body segment at one end that is horizontally away from the low-side drive pad (32). The extension segment is vertically spaced between the fifth pin segment (412) and the ninth pin segment (423).

7. The semiconductor device according to claim 3, characterized in that, The plurality of jumper pins (33) include a low-side jumper pin (332). The side of the molding compound (10) laterally adjacent to the low-side power pad (22) is designated as the low-side boundary (11), and the side laterally adjacent to the high-side power pad (21) is designated as the high-side boundary (12). One lateral end of the low-side jumper pin (332) is connected to the low-side boundary (11), and the other lateral end is spaced apart from the high-side boundary (12). The gate pad (23) of the low-side power chip (221) is electrically connected to the low-side jumper pin (332), and the low-side driver chip (321) is electrically connected to the low-side jumper pin (332); and / or, There are three low-side power pads (22) and the three low-side power pads (22) are spaced apart in the horizontal direction. A low-side power chip (221) is disposed on each of the three low-side power pads (22). There are three low-side jumper pins (332) and the three low-side jumper pins (332) are spaced apart in the vertical direction. The three low-side jumper pins (332) are electrically connected to the gate pads (23) of the three low-side power chips (221) in a one-to-one correspondence. The low-side driver chip (321) is provided with three horizontally spaced low-side driver output pads. The three low-side jumper pins (332) are electrically connected to the three low-side driver output pads.

8. The semiconductor device according to claim 7, characterized in that, The high-side drive pad (31) is connected to the low-side drive pad (32), and in the longitudinal direction, the high-side drive pad (31) protrudes at least partially relative to the side of the low-side drive pad (32) facing the substrate (20). The three low-side jumper pins (332) are all spaced apart on the side of the low-side drive pad (32) facing the substrate (20) in the longitudinal direction. The portion of the high-side drive pad (31) that protrudes in the longitudinal direction relative to the side of the low-side drive pad (32) facing the substrate (20) is defined as a protrusion (312). The low-side jumper pins (332) are spaced apart on the side of the protrusion (312) facing the low-side boundary (11) in the transverse direction.

9. The semiconductor device according to claim 8, characterized in that, The three high-side jumper pins (331) are spaced apart on one side of the high-side drive pad (31) facing the substrate (20) longitudinally, and the three low-side jumper pins (332) are spaced apart longitudinally between the low-side drive pad (32) and the three high-side jumper pins (331).

10. The semiconductor device according to claim 1, characterized in that, The side of the driver chip that faces away from the driver pad in the vertical direction is called the upper side of the driver chip, and the side of the power chip that faces away from the power pad in the vertical direction is called the upper side of the power chip. The vertical height difference between the upper sides of the driver chip and the upper sides of the power chip is set to d, where d satisfies the following relationship: d > 2.3 mm; and / or, Let the dimension of the plastic seal (10) in the lateral direction be L, and let L satisfy the relationship: L < 35.6 mm.

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