Plasma source with water leak detection system

Abstract

Disclosed herein are plasma sources, exhaust gas treatment units, and methods for detecting coolant leaks. A plasma source includes an RF generation system coupled with a cooling system. The RF generation system includes one or more electrical components including a hollow RF antenna for generating a plasma. The cooling system includes a coolant passage extending through the plasma source, including through the electrical components of the RF generation system; a first flow control device coupled to the coolant passage to control inflow of coolant into the coolant passage and electrically isolated from the hollow antenna; a second flow control device coupled to the coolant passage to control outflow of coolant from the coolant passage; and a pressure measurement device coupled with the coolant passage to measure a pressure level of the coolant. The coolant passage includes the hollow RF antenna.

Description

Technical Field

[0001] This disclosure relates to plasma sources for semiconductor processing systems, and more specifically, to plasma sources comprising a coolant leakage detection system capable of detecting leakage of the cooling medium. Background Technology

[0002] In semiconductor processing, plasma is used in many processes, including layer deposition, material etching, chamber cleaning, and effluent gas treatment. Plasma sources are integrated into multiple components of semiconductor processing systems. These plasma sources typically require cooling to remove the heat generated during operation. These plasma sources can utilize cooling systems that circulate a coolant (such as water) throughout the plasma source to remove heat.

[0003] Cooling systems can leak coolant due to wear, sputtering corrosion, arcing, etc. Leaking coolant can be drawn into the plasma region, which is typically in a vacuum. Even a small amount of coolant introduced into the plasma region can have adverse effects on the process. Current methods for detecting leaks in plasma systems rely on observing the presence of any liquid on the floor or any adverse effects on the vacuum region. Current methods may not be able to detect leaks in a timely manner. Furthermore, current methods may struggle to detect small leaks, such as pinholes in the cooling system.

[0004] Therefore, a plasma source with an improved system for detecting coolant leaks is needed. Summary of the Invention

[0005] This document discloses a plasma source comprising a cooling system capable of detecting coolant leakage, an exhaust gas treatment unit including the plasma source, and a method for detecting coolant leakage. In one example, the plasma source includes an RF generation system coupled to the cooling system. The RF generation system includes one or more electrical components operable to generate plasma in a plasma region, the one or more electrical components including a hollow RF antenna. The cooling system includes a coolant channel extending through the plasma source, including one or more electrical components of the RF generation system and configured to allow coolant flow; a first flow control device coupled to the coolant channel to control the inflow of coolant into the coolant channel and electrically isolated from the hollow RF antenna; a second flow control device coupled to the coolant channel to control the outflow of coolant from the coolant channel; and a pressure measuring device coupled to the coolant channel to measure the pressure level of the coolant. The coolant channel includes the hollow RF antenna.

[0006] In another example, an exhaust gas treatment unit for treating effluent gas from an exhaust gas treatment chamber includes a plasma source for treating the effluent gas with plasma exhaust gas; and a controller, a component coupled to and configured to control the plasma source. The plasma source is configured according to embodiments of this disclosure.

[0007] In another example, a method for detecting coolant leakage in a plasma source is provided. The plasma source includes an RF generation system coupled to a coolant leakage system. The method includes transmitting an RF electrical signal along the RF generation system of the plasma source, the RF generation system including a hollow RF antenna; circulating coolant within a coolant channel extending through the RF generation system, the coolant channel including the hollow RF antenna; measuring the pressure level of the coolant by a pressure measuring device; controlling the flow of coolant within the coolant channel based on the RF electrical signal by a flow control device coupled to the coolant channel; and determining, by a controller, whether leakage has occurred within the coolant channel based on the pressure level. Attached Figure Description

[0008] To gain a more detailed understanding of the features and methods employed in this disclosure, reference can be made to the embodiments for a more detailed description of the disclosure, some of which are shown in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and should not be construed as limiting their scope, allowing for other equally effective embodiments.

[0009] Figure 1 A schematic top view of a processing system according to an embodiment of this disclosure is shown.

[0010] Figure 2 A schematic cross-sectional view of a processing chamber having multiple plasma sources according to an embodiment of the present disclosure is shown.

[0011] Figure 3 A schematic diagram of an exhaust gas treatment system with a plasma source according to an embodiment is shown.

[0012] Figure 4 A schematic diagram of a plasma source having a system for detecting coolant leakage is shown according to an embodiment.

[0013] Figure 5 A schematic cross-sectional view of an RF antenna according to an embodiment is shown.

[0014] Figure 6 The operation of a method for detecting coolant leakage in a plasma source is shown.

[0015] For ease of understanding, the same element symbols are used where possible to represent common components in the figures. It is conceivable that components and features of one embodiment may be beneficially incorporated into other embodiments without further description. Detailed Implementation

[0016] This disclosure envisions that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, welding, fusion, interference fit, and / or fastening, such as using bolts, threaded connections, pins, and / or screws. This disclosure envisions that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integral formation. This disclosure envisions that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links, sliders, and / or frames.

[0017] This paper discloses a cooling system capable of detecting coolant leakage and a plasma source including the cooling system. The cooling system includes a hollow RF antenna that transmits RF power signals to the plasma chamber and circulates coolant within internal coolant channels. The coolant channels contact the outer surface of the plasma chamber. The coolant within the coolant channels removes heat from the plasma chamber.

[0018] The cooling system includes two valves controlling the inflow and outflow of coolant into and out of the coolant channels. The cooling system further includes a pressure measuring device positioned between the valves and the plasma chamber. When the plasma chamber stops generating plasma, the two valves close, thereby isolating the coolant within the coolant channels (including the hollow RF antenna) from external influences. The pressure measuring device measures the pressure level of the isolated coolant and transmits the measured pressure level to the controller. The controller determines whether coolant leakage has occurred based on the measured pressure level. Because the coolant channels (including the hollow RF antenna) contain a limited amount of coolant, even small leaks (such as pinhole leaks) will cause a significant drop in pressure level, which the pressure measuring device can detect. Therefore, the current cooling system can detect small, early coolant leaks and allow the plasma source and the host system to take timely remedial measures.

[0019] The plasma source controller or host system can compare the measured pressure level with a predetermined threshold to determine a leak. Other methods can also be used to determine a leak, such as observing a trend in the pressure level over a period of time, comparing the pressure level with historical pressure levels, or any other suitable method. Once a leak is determined, the controller can disconnect the coolant system, transmit a message to the operator, or perform any other mitigation and / or notification tasks.

[0020] Figure 1 A schematic top view of a processing system 100 according to one or more embodiments is shown. According to an embodiment, the processing system 100 includes a cooling system for multiple plasma sources as described in this disclosure. The cooling system includes a coolant leakage detection subsystem configured to detect coolant leakage. The processing system 100 includes one or more load-locking chambers 122 (… Figure 1 The disclosure shows two components: a processing platform 104, a factory interface 102, and a controller 144. In one or more embodiments, the processing system 100 can be adapted for use in a CENTURA® integrated processing system provided by Applied Materials, Inc., located in Santa Clara, California. It is conceivable that other processing systems, including those from other manufacturers, can be adapted to benefit from this disclosure.

[0021] The processing platform 104 includes multiple processing chambers 110, 112, 120, 128, one or more load-locking chambers 122, and a transfer chamber 136 coupled to the one or more load-locking chambers 122. The transfer chamber 136 can be maintained under vacuum or under ambient (e.g., atmospheric) pressure. Figure 1 Two load-locking chambers 122 are shown. The factory interface 102 is coupled to the transfer chamber 136 through the load-locking chambers 122.

[0022] In one or more embodiments, the factory interface 102 includes at least one docking station 109 and at least one factory interface robot 114 to facilitate the transfer of substrate 124. The docking station 109 is configured to receive one or more front-opening unified pods (FOUPs). Figure 1 The implementation scheme illustrates two FOUPs 106A and 106B. A factory interface robot 114, having a blade 116 mounted on one end, is configured to transfer one or more substrates from FOUPs 106A and 106B through a load-locking chamber 122 to a processing platform 104 for processing. The transferred substrates may be stored, at least temporarily, in the load-locking chamber 122.

[0023] Each of the load-locking chambers 122 has a first port for interface connection to the factory interface 102 and a second port for interface connection to the transfer chamber 136. The transfer chamber 136 has a vacuum robot 130 disposed therein. The vacuum robot 130 has one or more blades 134 ( Figure 1 Two are shown in the figure, which are capable of transferring substrate 124 between load lock chamber 122 and processing chambers 110, 112, 120 and 128.

[0024] Controller 144 is coupled to processing system 100 and is used to control the operation of processes and methods, such as those described herein (e.g., the operation of methods as described in other parts of this disclosure). Controller 144 includes a central processing unit (CPU) 138, an instruction-containing memory 140, and support circuitry 142 for the CPU. Controller 144 directly controls the components or is controlled via other computers and / or controllers.

[0025] Figure 2 A processing chamber 200 having multiple plasma sources according to an embodiment is shown. The processing chamber 200 may be as follows: Figure 1 Any of the processing chambers 110, 112, 128 and 120 shown. Figure 2 The processing chamber 200 includes sidewalls 202, a bottom 204, a chamber cover 224, and a lower wall liner 248. The chamber cover 224, sidewalls 202, and bottom 204 together enclose a processing area 246. A base 220 is disposed in the processing area 246 and supports a substrate 210 thereon during processing. The sidewalls 202 include a plurality of ports 206 for moving the substrate 210 into or out of the processing chamber 200.

[0026] The processing chamber 200 further includes a vacuum pump 214 and multiple gas sources 232. A remote plasma source 252 may be coupled to one or more of the gas supply devices in the gas sources 232 and configured to independently excite each process gas or a mixture of two or more process gases. The excited process gas is supplied to the chamber 200 through a top baffle 236. The vacuum pump 214 is coupled to the processing chamber 200 and configured to adjust the vacuum level within the process zone 246 via a valve 216. The vacuum pump 214 is also configured to extract waste gas from the processing chamber 200.

[0027] The processing chamber 200 also includes a gas chamber 238 contained between the cover 224 and the nozzle 234. A gas source 232 supplies process gas to the gas chamber 238 via a top baffle 236. The gas nozzle 234 includes multiple conduits that allow process gas to flow through it.

[0028] The processing chamber 200 includes multiple plasma sources 226, 228, and 230 disposed at various locations within the processing chamber 200 to excite process gases. For example... Figure 2 As shown, plasma source 230 may be disposed on the top surface of cover 224, and / or another plasma source 226 may be disposed around the sidewall of cover 224. Plasma sources 230 and 226 are operable to excite process gas above nozzle 234 (i.e., within gas chamber 238). Another plasma source 228 may be disposed along sidewall 202 and operable to excite process gas between nozzle 234 and base 220. Plasma sources 252, 230, 226, and 228 may be provided by Figure 1 The controller 114 depicted herein can be controlled individually or together. According to embodiments, any one, any two, any three, or all of the plasma sources 252, 230, 226, and 228 may include a cooling system as described in this disclosure.

[0029] Figure 3 A waste gas treatment system 300 with a plasma source according to an embodiment is shown. A semiconductor processing system 100 includes a waste gas treatment system 300 coupled to a processing chamber 200. The waste gas treatment system 300 includes a pre-pump waste gas treatment unit 304, a pump 306, and a main waste gas treatment system 308. A pre-line 318 couples the processing chamber 200 to the pre-pump waste gas treatment unit 304. Another pre-line 318 couples the pre-pump unit 304 to the pump 306. A transfer line 322 couples the pump 306 to the main waste gas treatment system 308. The pump 306 is configured to move effluent gas from the pre-pump waste gas treatment unit 304 to the main waste gas treatment system 308.

[0030] The pre-pump exhaust gas treatment system 304 may include a plasma exhaust gas treatment unit, such as the Aeris® exhaust gas treatment unit available from Applied Materials, Inc. in Santa Clara, California, as well as other suitable systems. The pre-pump exhaust gas treatment system 304 includes a plasma source 314, a reagent delivery unit 312, and a controller 316. The plasma source 314 may be a remote plasma source, an in-line plasma source, or other suitable plasma source for generating plasma within the treatment area of ​​the pre-pump exhaust gas treatment system 304. According to an embodiment, the plasma source 314 includes the coolant leak detection system described in this disclosure. The reagent delivery unit 312 delivers one or more reagents to the pre-line 318 or the treatment area according to instructions from the controller 316. The controller 316 is configured to control the operation of the pre-pump exhaust gas treatment unit 304. The controller 316 may similarly be configured as controller 144.

[0031] Figure 4A schematic diagram of a plasma source 400 according to an embodiment of this disclosure is shown. The plasma source 400 includes a cooling system 402 coupled to an RF generation system 406. The RF generation system 406 is configured to generate plasma. The cooling system 402 circulates a coolant 401 along various electrical components of the RF generation system to remove heat generated during operation. The coolant 401 can be any material capable of conducting heat, such as water or any other suitable material. In an embodiment, the cooling system and the RF generation system 406 share a hollow RF antenna 422, which both transmits RF electrical signals from the RF generation system 406 and allows the coolant 401 to flow in the cooling system 402. A coolant leakage system 402 is also configured to detect coolant leakage in the cooling system (including the hollow RF antenna).

[0032] The RF generation system 406 includes an RF power supply 408, an impedance matching network 409, a dielectric body 404, and an RF antenna 422, which are connected by a plurality of electrical connections 412. The RF power supply 408 is configured to generate RF electrical signals. The impedance matching network 409 is configured to match the impedance between the RF power supply 408 and the RF antenna 422. The dielectric body 404 includes dielectric walls 424 and a plasma region 420. According to an embodiment, the dielectric body 404 may be of any shape, such as a tube or any other suitable shape. The dielectric walls 424 are made of a dielectric material, such as ceramic, quartz, or any other suitable material.

[0033] The RF antenna 422 is conductive and capable of transmitting RF power signals with minimal loss. According to an embodiment, the RF antenna 422 is disposed around the outer surface 403 (such as dielectric wall 424) of the dielectric body 404, forming a loop around the dielectric wall 424. The RF antenna 422 may be made of a conductive material (such as copper or other suitable material).

[0034] According to the embodiment, the RF antenna 422 is hollow. For example... Figure 5 As shown, the RF antenna 422 may include an internal coolant channel 502 enclosed by a wall 504. The wall 504 is made of a conductive material, such as copper, aluminum, or any other suitable material. The wall 504 is configured to transmit RF power signals. The coolant channel 502 allows coolant to circulate within the RF antenna 422.

[0035] Electrical connection 412 is also conductive and capable of transmitting RF power signals with minimal loss. Electrical connection 412 is made of a conductive material such as copper, aluminum, or any other suitable material. However, electrical connection 412 does not serve as a liquid passage and does not have internal channels for the flow of coolant 401.

[0036] During plasma generation, RF power supply 408 generates an RF signal and transmits it to RF antenna 422 via electrical connection 412 and impedance matching network 409. When process gas 432 flows into plasma region 420, the RF signal transmitted by RF antenna 422 excites the process gas 432. According to an embodiment, RF antenna 422 generates inductively coupled plasma within plasma region 420.

[0037] like Figure 4 As shown, the cooling system 402 includes a coolant source 430, a pump 426, a first flow control device 414, a coolant inlet 428, a pressure measuring device 418, a coolant outlet 431, and a second flow control device 416. The cooling system 402 may also include controllers 316 and 144 for controlling the operation of the cooling system 402. In an embodiment, a coolant passage 410 is formed between the coolant inlet 428 and the coolant outlet 431 and extends through the RF generation system 402.

[0038] Coolant channel 410 is configured to allow coolant 401 to flow through the electrical components of RF generation system 406 to remove heat. Arrow 434 indicates the flow direction of coolant 401. Coolant channel 410 includes multiple channel segments extending through various electrical components of the RF generation system, such as channel segment 407 in RF power supply 408, channel segment 436 in impedance matching network 409, and RF antenna 422, which acts as its own channel segment. In one embodiment, the multiple channel segments are connected in series such that coolant 401 flows sequentially from one electrical component to another electrical component of RF generation system 402. In another embodiment, the channel segments may be connected in parallel.

[0039] The first and second flow control devices are configured to control the inflow and outflow of coolant 401 into coolant channel 410. According to an embodiment, coolant inlet 428 is electrically isolated from RF generation system 406. Coolant outlet 431 is also electrically isolated from RF generation system 406. In an embodiment, channel segments 407 and 436 act as electrical insulators. For example, channel segments 407 and 436 are made of non-conductive materials, such as rubber, plastic, or any other suitable material. Although channel segments 407 and 436 are connected to RF antenna 422 and electrical connection 412, electrical signals from RF generation system 406 may not be transmitted to the flow control devices because channel segments 407 and 436 are electrical insulators.

[0040] According to an embodiment, the pressure measuring device 418 of the cooling system 402 is configured to detect the pressure of the coolant 401 inside the coolant passage 410. The pressure measuring device 418 can be any device capable of measuring the pressure of the coolant 401, such as a pressure gauge or any other suitable device.

[0041] The pressure measuring device 418 can be positioned at any suitable location along the coolant passage 410. For example, the pressure measuring device 418 can be positioned between the second flow control device 416 and the coolant outlet 431. The pressure measuring device 418 can also be positioned between the first flow control device 414 and the coolant inlet 428. According to an embodiment, the pressure measuring device 418 can be coupled to the controller 316 of the pre-pump exhaust gas treatment unit 304, which is coupled to the controller 144 of the treatment system 100. According to another embodiment, the pressure measuring device 418 can be directly coupled to the controller 144 or other system-level controllers. Either controller 316 or 144 can be configured to determine whether leakage has occurred in the coolant passage 410 based on the measured pressure value.

[0042] Pressure measuring device 418 is configured to measure the pressure level of the coolant inside coolant channel 410 during and / or after the plasma generation process. Pressure measuring device 418 also transmits the measured pressure level to controllers 316 and / or 144. Controllers 316 and 144 are configured to receive operating parameters of pump 426 and plasma region 420, which are used to determine whether pressure fluctuations are related to coolant leakage. Leakage determination methods may include examining real-time changes in pressure levels, comparing measured pressure levels with predetermined thresholds or recorded pressure levels, and any other information.

[0043] After the plasma generation process is completed, the first flow control device 414 and the second flow control device 416 are shut down to isolate the coolant 401 inside the coolant passage 410. After the flow control devices are shut down, any pressure fluctuations measured by the pressure measuring device 418 are likely caused by coolant leakage. In this example, when the pressure measuring device 418 detects a pressure drop immediately after the flow control devices are shut down, the controllers 316 and 144 can determine that leakage may have occurred inside the coolant passage 410.

[0044] Figure 6A method 600 for detecting coolant leakage in a plasma source is shown. The plasma source includes an RF generation system coupled to a cooling system. The RF generation system includes a hollow RF antenna. The cooling system includes a coolant channel. Method 600 includes several operations. At operation 602, an RF electrical signal is transmitted along the hollow RF antenna of the RF generation system. The RF electrical signal is transmitted to a dielectric body enclosing the plasma region. The RF electrical signal generates plasma when process gas flows into the plasma region. At operation 604, coolant is circulated within the coolant channel extending through the RF generation system to remove heat from the plasma source. The coolant channel includes the hollow RF antenna. At operation 606, a pressure measuring device measures the pressure level of the coolant. At operation 608, a flow control device of the coolant leakage system controls the flow of coolant within the coolant channel (including the hollow RF antenna) according to the RF electrical signal. The flow control device can shut off the coolant flow when the RF electrical signal is disconnected and restart the coolant flow when the RF electrical signal is turned on. The pressure measuring device continues to measure the pressure level when the flow control device is closed. At operation 610, the controller determines whether a leak has occurred inside the coolant channel based on the pressure level. For example, a leak in the RF antenna can be identified when the pressure level drops immediately after the RF electrical signal is disconnected. The controller can determine whether a leak has occurred in the coolant channel after each plasma generation process is completed. The controller can also transmit notification of a leak to a higher-level controller, allowing for the initiation of leak inspection and / or measures to mitigate potential damage.

[0045] It is conceivable that one or more aspects disclosed herein may be combined. Furthermore, it is conceivable that one or more aspects disclosed herein may include some or all of the benefits described above. While the foregoing is directed to embodiments of this disclosure, other and additional embodiments of this disclosure may be devised without departing from its essential scope, as defined by the following claims.

Claims

1. A plasma source for generating plasma, comprising: An RF generation system comprising one or more electrical components operable to generate plasma in a plasma region; and Cooling system, including: A coolant channel extending through the plasma source and configured to allow coolant flow to cool the one or more electrical components; A first flow control device is coupled to the coolant passage to control the inflow of coolant into the coolant passage; A second flow control device is coupled to the coolant passage to control the outflow of coolant from the coolant passage; as well as A pressure measuring device coupled to the coolant passage to measure the pressure level of the coolant.

2. The plasma source of claim 1, wherein the one or more electrical components include a hollow RF antenna configured to transmit electrical signals, and the hollow RF antenna includes an internal channel forming a first channel segment of the coolant channel.

3. The plasma source of claim 2, wherein the cooling system comprises a pump coupled to a coolant source coupled to the coolant channel via the first flow control device and / or the second flow control device.

4. The plasma source according to claim 2, The one or more electrical components include an RF power supply, and the coolant channel includes a second channel segment extending through the RF power supply. The first flow control device is electrically isolated from the RF power supply and the hollow RF antenna.

5. The plasma source of claim 2, wherein the RF generating system comprises a dielectric body enclosing the plasma region, and the hollow RF antenna surrounds the dielectric body.

6. The plasma source of claim 2, wherein the one or more electrical components include an impedance matching network, and the coolant channel includes a third channel segment extending through the impedance matching network.

7. The plasma source of claim 1, wherein the cooling system includes a controller coupled to the pressure measuring device and configured to determine whether coolant leakage has occurred based on the pressure level.

8. The plasma source of claim 7, wherein the first and second flow control devices are configured to isolate the coolant in the coolant channel after the plasma process, and the pressure measuring device is configured to measure the pressure level of the isolated coolant in the coolant channel.

9. An exhaust gas treatment unit for treating effluent gas from an exhaust gas treatment chamber, the exhaust gas treatment unit comprising: A plasma source, the plasma source being used to treat the effluent gas with plasma exhaust gas and comprising an RF generation system and a cooling system; and A controller configured to control the operation of the plasma source. The RF generation system described herein includes one or more electrical components operable to generate plasma in a plasma region, and The cooling system described herein includes: A coolant channel extending through the plasma source and configured to allow coolant flow to cool the one or more electrical components; A first flow control device is coupled to the coolant passage to control the inflow of coolant into the coolant passage; A second flow control device is coupled to the coolant passage to control the outflow of coolant from the coolant passage; as well as A pressure measuring device coupled to the coolant passage to measure the pressure level of the coolant.

10. The exhaust gas treatment unit of claim 9, wherein the one or more electrical components include a hollow RF antenna configured to transmit electrical signals, and the hollow RF antenna includes an internal channel forming a first channel segment of the coolant channel.

11. The exhaust gas treatment unit of claim 10, wherein the cooling system comprises a pump coupled to a coolant source coupled to the coolant passage via the first flow control device and / or the second flow control device.

12. The waste gas treatment unit according to claim 10, The one or more electrical components include an RF power supply, and the coolant channel includes a second channel segment extending through the RF power supply. The first flow control device is electrically isolated from the RF power supply and the hollow RF antenna.

13. The exhaust gas treatment unit of claim 10, wherein the RF generation system comprises a dielectric body enclosing the plasma region, and the hollow RF antenna surrounds the dielectric body.

14. The exhaust gas treatment unit of claim 10, wherein the one or more electrical components include an impedance matching network, and the coolant channel includes a third channel segment extending through the impedance matching network.

15. The exhaust gas treatment unit of claim 9, wherein the cooling system is configured to determine whether coolant leakage has occurred based on the pressure level.

16. The exhaust gas treatment unit of claim 15, wherein the first and second flow control devices are configured to isolate the coolant in the coolant channel after the plasma process, and the pressure measuring device is configured to measure the pressure level of the isolated coolant in the coolant channel.

17. A method for detecting coolant leakage in a plasma source, comprising the following steps: RF electrical signals are transmitted along the RF generation system of the plasma source, the RF generation system comprising one or more electrical components; Coolant is circulated within a coolant channel extending through the plasma source to cool the one or more electrical components; The pressure level of the coolant is measured using a pressure measuring device; The flow of coolant inside the coolant channel is controlled by a flow control device coupled to the coolant channel according to the RF electrical signal; as well as The controller determines whether a leak has occurred inside the coolant passage based on the pressure level.

18. The method of claim 17, wherein the one or more electrical components comprise a hollow RF antenna, and the method further comprises the following steps: The coolant flows inside the internal channel of the hollow RF antenna.

19. The method of claim 18, further comprising the step of: The flow control device is shut down when the RF electrical signal is disconnected; and The pressure level is measured when the flow control device is turned off.

20. The method of claim 18, further comprising the following steps: After each plasma process is completed, it is determined whether any leakage has occurred inside the coolant channel.

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