Substrate processing apparatus, method of manufacturing semiconductor device, and program

Abstract

The present application provides a technology for improving productivity by shortening the heating time of a substrate. There are provided: a processing chamber that performs a heating process on a substrate; a container that holds an unprocessed substrate to be carried into the processing chamber or a processed substrate carried out of the processing chamber; a supply portion that supplies a fluid that heats the unprocessed substrate held in the container or cools the processed substrate; a discharge portion that discharges the fluid from the container; an accumulation portion that accumulates the fluid heated by cooling the processed substrate; and a control portion that controls the supply of the fluid accumulated in the accumulation portion to the container to heat the unprocessed substrate.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a method and procedure for manufacturing a semiconductor device. Background Technology

[0002] For example, Japanese Patent Application Publication No. 2023-044818 discloses a substrate processing apparatus comprising: a processing chamber for processing substrates; a processing gas supply unit for supplying processing gas to the processing chamber; a transport chamber capable of communicating with the processing chamber; a first inert gas supply unit for supplying inert gas to the transport chamber; a first exhaust unit for discharging atmosphere from the transport chamber; and a second inert gas supply unit for supplying the inert gas discharged from the first exhaust unit to the processing chamber or a downstream portion of the processing chamber. Summary of the Invention

[0003] The problem that the invention aims to solve

[0004] This disclosure provides a technique for improving productivity by shortening the heating time of a substrate.

[0005] Methods for solving problems

[0006] According to one approach, a technology is provided comprising: a processing chamber for heating a substrate; a container for holding an unprocessed substrate to be moved into the processing chamber or a processed substrate to be moved out of the processing chamber; a supply unit for supplying fluid to heat the unprocessed substrate placed in the container or to cool the processed substrate; a discharge unit for discharging the fluid from the container; a storage unit for storing the fluid heated by cooling the processed substrate; and a control unit capable of controlling the supply of the fluid stored in the storage unit to the container to heat the unprocessed substrate.

[0007] Invention Effects

[0008] According to this disclosure, productivity can be increased by shortening the heating time of the substrate. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the overall substrate processing apparatus used in the embodiments of this disclosure.

[0010] Figure 2 This is a side cross-sectional view of the substrate processing apparatus used in the embodiments of this disclosure.

[0011] Figure 3 This is a block diagram showing an overview of the control unit used in the embodiments of this disclosure.

[0012] Figure 4 This is an example of a screen displayed on a display unit used in embodiments of this disclosure.

[0013] Figure 5 This is a schematic diagram of the preheating and cooling system used in the embodiments of this disclosure.

[0014] Figure 6 yes Figure 5 A simplified enlarged view of the accumulation section.

[0015] Figure 7 This is a flowchart illustrating the process of supplying an inert gas to an untreated substrate to heat the untreated substrate in a substrate processing step according to an embodiment of the present disclosure.

[0016] Figure 8 This is a flowchart illustrating the process of supplying an inert gas to the processed substrate to cool the processed substrate in a substrate processing step according to an embodiment of the present disclosure. Detailed Implementation

[0017] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0018] The substrate processing apparatus described below is used in the manufacturing process of semiconductor devices to perform a prescribed process on a substrate that is to be processed. The substrate to be processed is, for example, a wafer (hereinafter simply referred to as "substrate") that serves as a semiconductor substrate, on which a semiconductor device is formed. Furthermore, when the term "substrate" is used in this specification, it may refer to "the substrate itself" or to "a laminate (assembly) of the substrate and prescribed layers, films, etc., formed on its surface" (i.e., the substrate includes all prescribed layers, films, etc., formed on its surface). Additionally, when the term "surface of the substrate" is used in this specification, it may refer to "the surface (exposed surface) of the substrate itself" or to "the surface of the prescribed layers, films, etc., formed on the substrate, i.e., the outermost surface of the substrate as a laminate."

[0019] As a prescribed process for the substrate (hereinafter sometimes simply referred to as "processing"), there are, for example, oxidation processing, diffusion processing, annealing processing, etching processing, pre-cleaning processing, chamber cleaning processing, film formation processing, etc. In this embodiment, the case of film formation processing is specifically listed as an example.

[0020] Furthermore, the processing temperature in this specification refers to the temperature of the substrate 200 or the temperature inside the processing chamber 202, and the processing pressure refers to the pressure inside the processing chamber 202. Additionally, the processing time refers to the duration of the processing. These same principles apply in the following descriptions.

[0021] (structure)

[0022] Reference Figure 1 and Figure 2 The overall structure of the substrate processing apparatus 10 according to the embodiments of the present disclosure will be described. Figure 1 This is a cross-sectional view showing an example of the overall structure of the substrate processing apparatus 10 according to the embodiment. Figure 2 This is a longitudinal sectional view showing an example of the overall structure of the substrate processing apparatus 10 according to the embodiment. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and scales of the elements shown in the drawings may not correspond to reality. Additionally, the dimensional relationships and scales of the elements in the multiple drawings may not be consistent with each other.

[0023] like Figure 1 and Figure 2 As shown, the substrate processing apparatus 10 of this embodiment includes: a plurality of processing modules 201a, 201b, 201c and 201d, which process the substrate 200; a vacuum transfer chamber 103, which transfers the substrate 200 under vacuum pressure; a load-lock chamber (also called a "sample chamber") 122, which is a container for switching between atmospheric pressure and vacuum pressure and for holding the substrate 200; an atmospheric transfer chamber 121, which transfers the substrate 200 under atmospheric pressure; and a display unit 518 (see reference). Figure 3 The display unit 500 shows the status of the substrate processing apparatus 10; the control unit 500 is capable of controlling the substrate processing apparatus 10. The substrate processing apparatus 10 of this embodiment is a so-called cluster-type apparatus having multiple processing modules 201a to 201d around the vacuum transfer chamber 103.

[0024] The following is a detailed explanation of each of these structures. Furthermore, in the following explanation, regarding front, back, left, and right, X1 is right, X2 is left, Y1 is front, and Y2 is back.

[0025] (Processing module)

[0026] First, the detailed structure of each processing module 201a to 201d will be described. Each processing module 201a to 201d functions as a monolithic substrate processing device 10 and has the same structure.

[0027] Here, we will use one of the processing modules 201a to 201d as an example to illustrate the specific structure. Since we are using one of the processing modules 201a to 201d as an example, in the following description, processing modules 201a to 201d will be simply described as "processing module 201", the cold-walled processing containers 203a to 203d constituting each processing module 201a to 201d will also be simply described as "processing container 203", the processing chambers 202a to 202d formed within each processing container 203a to 203d will be simply described as "processing chamber 202", and the gate valves 161a to 161d corresponding to each processing module 201a to 201d will also be simply described as "gate valve 161".

[0028] The processing module 201 includes: a processing container 203, a raw material gas supply system 243, a reaction gas supply system 244, a purging gas supply system 245, a cleaning gas supply system 248, and a gas exhaust system.

[0029] (Processing container)

[0030] As described above, the processing module 201 is composed of a cold-walled processing container 203. The processing container 203 is, for example, a closed container with a circular and flat cross-section, and is made of a metal material such as aluminum (Al) or stainless steel (SUS). The processing container 203 is composed of an upper container 203U and a lower container 203L.

[0031] A processing chamber 202 is formed inside the processing container 203. The processing chamber 202 has: a processing space 202P located on its upper side (above the substrate stage 212 described later), for processing substrates 200 such as wafers; and a transport space 202T located on its lower side, which is surrounded by the lower container 203L.

[0032] An exhaust buffer chamber 209 is provided near the outer periphery of the interior of the upper container 203U. The exhaust buffer chamber 209 functions as a buffer space when the gas in the processing chamber 202 is discharged to the side and around. Therefore, the exhaust buffer chamber 209 has a space that is configured to surround the outer periphery of the processing chamber 202. That is, the exhaust buffer chamber 209 has a space that is formed in an annular shape when viewed from above on the outer periphery of the processing chamber 202.

[0033] On the side of the lower container 203L, which forms one of the walls of the processing container 203, there is a substrate loading / unloading outlet 206 adjacent to the gate valve 161. The substrate 200 is loaded into the transport space 202T via the substrate loading / unloading outlet 206. A plurality of lifting pins 207 are provided at the bottom of the lower container 203L.

[0034] (Substrate support portion)

[0035] A substrate support portion (base) 210 for supporting the substrate 200 is provided in the processing chamber 202. The substrate support portion 210 mainly includes: a substrate mounting surface 211 for mounting the substrate 200; a substrate mounting stage 212 having the substrate mounting surface 211 on its surface; and a heater 213 serving as a heating source enclosed in the substrate mounting stage 212. In the substrate mounting stage 212, through holes 214 for the lifting pins 207 to pass through are respectively provided at positions corresponding to the lifting pins 207.

[0036] The substrate mounting stage 212 is supported by a shaft 217. The shaft 217 extends through the bottom of the processing container 203 and is connected to a lifting mechanism 218 on the outside of the processing container 203. By operating the lifting mechanism 218, the shaft 217 and the substrate mounting stage 212 are raised and lowered, thereby enabling the substrate 200 placed on the substrate mounting surface 211 to be raised and lowered. Furthermore, the lower end of the shaft 217 is surrounded by a bellows 219, which keeps the interior of the processing container 203 airtight.

[0037] When the substrate 200 is transported, the substrate mounting stage 212 descends to the position where the substrate mounting surface 211 is opposite to the substrate loading and unloading outlet 206 (substrate transport position), and rises to the processing position within the processing space 202P of the substrate 200 (substrate processing position) when the substrate 200 is processed.

[0038] Specifically, when the substrate stage 212 is lowered to the substrate transport position, the upper end of the lifting pin 207 protrudes from the upper surface of the substrate mounting surface 211, and the lifting pin 207 supports the substrate 200 from below. Conversely, when the substrate stage 212 is raised to the substrate processing position, the lifting pin 207 is submerged from the upper surface of the substrate mounting surface 211, and the substrate mounting surface 211 supports the substrate 200 from below.

[0039] (Sprayer head)

[0040] A nozzle 230, serving as a gas dispersion mechanism, is disposed above the processing space 202P (upstream of the gas supply direction). A gas inlet 241 is provided on the cover 231 of the nozzle 230. This gas inlet 241 is configured to communicate with the gas supply system described later. Gas introduced from the gas inlet 241 is supplied to the buffer space 232 of the nozzle 230.

[0041] An insulating block 233 is provided between the cover 231 and the upper container 203U to insulate the cover 231 from the upper container 203U.

[0042] The nozzle 230 includes a dispersion plate 234 for dispersing gas supplied from the gas supply system via a gas inlet 241. An upstream buffer space 232 and a downstream processing space 202P are located on the dispersion plate 234. A plurality of through holes 234a are provided in the dispersion plate 234. The dispersion plate 234 is configured to face the substrate mounting surface 211.

[0043] (Gas supply system)

[0044] A common gas supply pipe 242 is connected to the cap 231 of the nozzle 230, so that it communicates with the gas inlet 241. The common gas supply pipe 242 communicates with the buffer space 232 inside the nozzle 230 via the gas inlet 241. In addition, a first gas supply system 243, a second gas supply system 244, and a third gas supply system 245 are connected to the common gas supply pipe 242.

[0045] The system primarily supplies raw material gas, one of the processing gases, from the first gas supply system 243, also known as the raw material gas supply system (raw material gas supply unit). The second gas supply system 244, also known as the reaction gas supply system (reaction gas supply unit), primarily supplies the other processing gas, the reaction gas. The third gas supply system 245, also known as the purge gas supply system (purge gas supply unit), supplies inert gas as a purge gas when processing the substrate 200. When cleaning the nozzle 230 or processing chamber 202, cleaning gas is primarily supplied from the fourth gas supply system 248, also known as the cleaning gas supply system (cleaning gas supply unit), via the purge gas supply system. Furthermore, regarding the gases supplied from the gas supply systems, the raw material gas is sometimes referred to as the first gas, the reaction gas as the second gas, the inert gas as the third gas, and the cleaning gas as the fourth gas. Additionally, all the gas supply systems are sometimes collectively referred to as the gas supply unit.

[0046] (Gas exhaust system)

[0047] The processing container 203 includes an exhaust system 223 that discharges the atmosphere from the processing chamber 202 via an exhaust port 221 located on the upper surface or side of the exhaust buffer chamber 209. Furthermore, the exhaust system 223 includes an APC (Auto Pressure Controller) (not shown) and controls the pressure within the processing container 203 according to instructions from the control unit 500 described later.

[0048] (Atmospheric transport room)

[0049] Atmospheric transport chamber 121 is connected to the front side of loading interlock chamber 122 via gate valve 128. Atmospheric transport chamber 121 is used at approximately atmospheric pressure.

[0050] An atmospheric transport robot 124 with a transfer substrate 200 is installed inside the atmospheric transport chamber 121. The atmospheric transport robot 124 is configured to move vertically or horizontally (see reference). Figure 2 ).

[0051] On the left side of the atmospheric transport chamber 121, there is a device (hereinafter referred to as a "pre-aligner") 106 for aligning the notch or orientation plane formed on the substrate 200. Figure 1 ).

[0052] (IO Workbench)

[0053] On the front side of the housing 125 of the atmospheric transport chamber 121, there is a substrate loading / unloading outlet 134 and a cell opener 108 for moving the substrate 200 into and out of the atmospheric transport chamber 121. On the outer side of the housing 125, opposite to the cell opener 108 and separated from the substrate loading / unloading outlet 134, there is an I / O worktable 105.

[0054] Multiple FOUPs (Front Opening Unified Pods, hereinafter referred to as "cabinets 100") 100 are mounted on the IO workbench 105, each containing multiple substrates 200. The cabinets 100 serve as carriers for transporting substrates 200, such as silicon (Si) substrates. Within the cabinets 100, multiple unprocessed substrates 200 and processed substrates 200 are stored horizontally. The cabinets 100 are supplied and discharged relative to the IO workbench 105 via an in-process transport device (RGV) not shown.

[0055] The cassette 100 on the I / O stage 105 is opened and closed by the cassette opener 108. The cassette opener 108 has a mechanism for opening and closing a cover (not shown) on the cassette 100. The cassette opener 108 opens and closes the cover (not shown) of the cassette 100 placed on the I / O stage 105, opening / closing the substrate inlet / outlet, thereby allowing the substrate 200 to enter and exit relative to the cassette 100.

[0056] (Vacuum transfer chamber)

[0057] The vacuum transfer chamber 103 functions as a transfer chamber that transports the substrate 200 under negative pressure. The housing 101 constituting the vacuum transfer chamber 103 is hexagonal when viewed from above. Furthermore, the loading interlock chamber 122 and each of the processing modules 201a to 201d are connected to each side of the hexagon via gate valves 160, 161a to 161d, respectively.

[0058] Of the six side walls of the housing 101 constituting the vacuum transfer chamber 103, the remaining four side walls, which are not connected to the loading interlock chamber 122, are respectively connected radially to processing modules 201a-201d that perform the desired processing on the substrate 200, centered on the vacuum transfer chamber 103, via gate valves 161a-161d. Each processing module 201a-201d is composed of cold-walled processing containers 203a-203d, forming a processing chamber 202a-202d. Within each processing chamber 202a-202d, processing of the substrate 200 is performed as a step in the manufacturing process of a semiconductor or semiconductor device. Examples of processing performed within each processing chamber 202a-202d include various substrate processing procedures such as: forming a thin film on the substrate; oxidation, nitriding, carburizing, etc., of the substrate surface; forming films such as silicides and metals; etching the substrate surface; and reflow processing.

[0059] At approximately the center of the vacuum transfer chamber 103, a vacuum transfer robot 112 is provided at its base on a flange 115. This robot is designed to transfer (transfer) the substrate 200 under negative pressure. The vacuum transfer robot 112 is configured to maintain the airtightness of the vacuum transfer chamber 103 and to move up and down via a lift 116 and a flange 115 (see reference). Figure 2 ).

[0060] (Loading the interlocked room)

[0061] Two of the front side walls of the housing 101 constituting the vacuum transfer chamber 103 are connected via gate valves 160 to two loading interlock chambers 122, which are examples of containers in this embodiment. Each loading interlock chamber 122 is provided with a substrate mounting platform 150 for receiving the container. Furthermore, each loading interlock chamber 122 is configured to withstand negative pressure. Additionally, the two loading interlock chambers 122 can be used for receiving or receiving the container.

[0062] In addition, as will be discussed later Figure 5 As shown, a temperature sensor 302 and a pressure sensor 304 are installed in the loading interlock chamber 122. The temperature sensor 302 measures the temperature inside the loading interlock chamber 122 and sends the measured value to the temperature measuring unit 532, which will be described later. The pressure sensor 304 measures the pressure inside the loading interlock chamber 122 and sends the measured value to the pressure measuring unit 536, which will be described later. Furthermore, a preheating and cooling system is connected to the loading interlock chamber 122. The preheating and cooling system will be described later.

[0063] The loading interlock chamber 122 can switch its internal pressure to atmospheric pressure or vacuum pressure. For example, when the unprocessed substrate 200 is moved into the atmospheric transfer chamber 121 or when the processed substrate 200 is moved out of the atmospheric transfer chamber 121, the loading interlock chamber 122 is switched to atmospheric pressure. Conversely, when the processed substrate 200 is moved into the vacuum transfer chamber 103 or when the unprocessed substrate 200 is moved out of the vacuum transfer chamber 103, the loading interlock chamber 122 is switched to vacuum pressure.

[0064] (Control Department)

[0065] The control unit 500 is a structural component that controls the operation of each part constituting the substrate processing apparatus 10. For example... Figure 3 As shown, the control unit 500 includes: a CPU 501 (Central Processing Unit), which is an example of a processor; and RAM 502 (Random Access Memory), which serves as a temporary working area for the CPU 501. Additionally, the control unit 500 includes: a ROM (Read Only Memory) 503 that stores a control program that enables the CPU 501 to function as the control unit 500; a storage unit 504 that stores the execution results of the program; and an I / O port 505. The CPU 501, RAM 502, storage unit 504, and I / O port 505 are connected via a bus (not shown).

[0066] Thus, the control unit 500 is allocated a dedicated processor and memory to execute each process. The CPU 501 reads the control program from the ROM 503 and executes the overall control of the board processing apparatus 10 undertaken by the control unit 500. That is, the control unit 500 in this embodiment is also an example of a computer.

[0067] Storage unit 504 is an example of a storage device that can maintain the stored information even if the power supplied to it is cut off, for example, using semiconductor memory, but hard disk can also be used.

[0068] In addition, such as Figure 3 As shown, the process control unit 522 and the transfer control unit 524 are connected at I / O port 505.

[0069] The process control unit 522 is a control device that executes the processing of the substrate 200 by the substrate processing apparatus 10. Specifically, the process control unit 522 is connected to the temperature measuring unit 532, the gas supply unit 534, and the pressure measuring unit 536.

[0070] As an example, the temperature measuring unit 532 is a device that is connected to a temperature sensor (not shown) disposed in the processing chamber 202, the temperature sensor 302 disposed in the loading interlock chamber 122, to measure the temperature of the internal space of the structure or the temperature of the substrate 200, and to send the measurement results to the control unit 500.

[0071] Furthermore, as an example, the gas supply unit 534 is a device connected to the aforementioned processing unit that controls the supply and stop of various gases. Additionally, the gas supply unit 534 is also a device that controls the gas supplied to the processing chamber 202 and the loading interlock chamber 122 by controlling various valves included in the preheating and cooling system described later.

[0072] As an example, the pressure measuring unit 536 is a device that is connected to a pressure sensor (not shown) disposed in the processing chamber 202, and a pressure sensor 304 disposed in the loading interlock chamber 122, to measure the pressure of the internal space of the structure and send the measurement results to the control unit 500.

[0073] The transport control unit 524 is a control device that is connected to the drive structure of the above-mentioned atmospheric transport robot 124, vacuum transport robot 112, gate valve 160, etc., and controls the drive of the structure according to the instructions of the control unit 500.

[0074] In addition, such as Figure 3 As shown, the external communication unit 512, the external storage unit 514, the operation unit 516, and the display unit 518 are connected to the I / O port 505.

[0075] The external communication unit 512 is connected to a communication line and has a communication protocol for sending and receiving data with an external device (not shown) connected to the same communication line. The external communication unit 512 performs data communication with the external device according to the instructions of the CPU 501 in the control unit 500.

[0076] The external storage unit 514 is a device for storing various types of data, which is separate from the storage unit 504 included in the control unit 500. The specific structure of the external storage unit 514 is not particularly limited. As an example, it can be a network-connected storage device such as a NAS (Network Attached Storage) or a portable storage medium such as an SD memory card.

[0077] The operation unit 516 is a device that receives instructions from the operator and notifies the CPU 501 of the control unit 500 of the received instructions. Examples of such devices include buttons installed on the housing of the substrate processing apparatus 10 and a hanging plate connected to the substrate processing apparatus 10. In addition, the display unit 518 is a display device that displays information from the substrate processing apparatus 10. Examples of such devices include liquid crystal displays or organic EL (electroluminescence) displays.

[0078] Furthermore, in this embodiment, the display unit 518 and the operation unit 516 are described later. Figure 4 As shown, an example will be provided of a touch panel that allows the operator to operate the device by touching the screen. In other words, in this embodiment, the touch panel serves as both the display unit 518 and the operation unit 516. A detailed description of the display on the touch panel will follow.

[0079] Furthermore, the structures connected to I / O port 505 are examples of structures corresponding to the functions of the substrate processing device 10. Additionally, the term "structure" refers to an execution unit that performs processing under the control of processors such as CPU 501 and RAM 502.

[0080] (Display Department)

[0081] like Figure 4 As shown, the various structures of the substrate processing apparatus 10 are schematically displayed in the display screen 518D of the display unit 518.

[0082] More specifically, such as Figure 4 As shown, display screen 518D displays icons I105 indicating the status of multiple I / O workstations 105 and I121 indicating the status of the atmospheric transfer chamber 121. Additionally, display screen 518D also displays icons I122 indicating the status of multiple loading interlock chambers 122, icon I103 indicating the status of the vacuum transfer chamber 103, and icon I203 indicating the status of multiple processing chambers 202. Furthermore, display screen 518D also displays an icon IW indicating the presence or absence of the substrate 200.

[0083] In addition, the “state” mentioned above includes not only the presence or absence of other structures housed within each structure, but also the state of the processes implemented in each structure, the temperature of the gas supplied to each structure, and other conditions.

[0084] Additionally, the icon I122 indicating the state of the loading interlock chamber 122 includes a gas temperature icon GT indicating the temperature of the inert gas supplied to the loading interlock chamber 122. As an example, when the gas temperature icon GT is displayed as "HOT" (high temperature), a high-temperature inert gas is supplied to the loading interlock chamber 122; when the gas temperature icon GT is displayed as "COLD" (low temperature), a low-temperature inert gas is supplied to the loading interlock chamber 122.

[0085] Next, refer to Figure 5 and Figure 6 The preheating and cooling system 340 of this embodiment will be described.

[0086] (Preheating and cooling system)

[0087] like Figure 5 As shown, the preheating and cooling system 340 includes: an inert gas supply system 342, an inert gas discharge system 344, and a storage section 402.

[0088] (Inert gas supply system)

[0089] like Figure 5 As shown, the inert gas supply system 342 includes: a tank 400, a supply pipe 410, a first on / off valve 414, a first three-way valve 416, a second on / off valve 418, a first inlet pipe 420, and a first outlet pipe 422.

[0090] The tank 400 contains an inert gas, which is an example of the fluid used in this embodiment. As an example, the temperature of the inert gas stored in the tank 400 is room temperature or the same as the temperature of the environment in which the substrate processing apparatus 10 is installed. In other words, the temperature of the inert gas stored in the tank 400 is lower than the temperature at which the substrate 200 is processed in the substrate processing apparatus 10. That is, the inert gas inside the tank 400 in this embodiment is an example of a "cold fluid" in this embodiment.

[0091] The supply pipe 410 is a component that connects the tank 400 to the loading interlock chamber 122, enabling the inert gas inside the tank 400 to flow to the loading interlock chamber 122. In addition, the supply pipe 410 is provided with an MFC 412 (mass flow controller), a first on / off valve 414, and a first three-way valve 416 in sequence from the tank 400 side.

[0092] MFC412 is a structural component that regulates the flow rate and pressure of the inert gas supplied from tank 400. Additionally, the first on / off valve 414 is a structural component that opens and closes the flow path of the supply pipe 410, enabling control of the inert gas flow supplied from tank 400 on the downstream side of MFC412.

[0093] The first three-way valve 416 is a valve located downstream of MFC412 in the supply pipe 410, such as... Figure 5 As shown, the flow path can be switched so that the inert gas flowing in the supply pipe 410 flows to the first inlet pipe 420.

[0094] In addition, such as Figure 5 As shown, the first inlet pipe 420 is a structural component connected to the first three-way valve 416 and the storage section 402, which enables inert gas to flow from the first three-way valve 416 to the interior of the storage section 402.

[0095] The first ejector pipe 422 is a component that connects the supply pipe 410 to the storage section 402, allowing inert gas to flow from the storage section 402 to the supply pipe 410. In addition, the first ejector pipe 422 is provided with a first filter 424 and a second on / off valve 418 sequentially from the storage section 402 side.

[0096] As described below, the first filter 424 is a component that removes impurities contained in the inert gas stored in the accumulation section 402. Impurities include, for example, particles generated during substrate processing, residual gases from the processing gas, etc. Furthermore, the first filter 424 is heat-resistant and will not be damaged even if it passes through an inert gas heated to the temperature at which the substrate 200 is processed in the substrate processing apparatus 10.

[0097] The second on / off valve 418 is a structural component that opens and closes the flow path of the first ejector pipe 422, and can control the flow of inert gas supplied from the storage section 402 on the downstream side of the first filter 424.

[0098] Furthermore, in this embodiment, the fluid flow path from tank 400 to loading interlock chamber 122 is switched by the operation of the first three-way valve 416 and the opening and closing of the second on / off valve 418. In other words, the combination of the first three-way valve 416 and the second on / off valve 418 is an example of a supply source switching valve in this embodiment.

[0099] That is, the inert gas supply system 342 in this embodiment is an example of a "supply unit" in this embodiment. Additionally, the MFC 412 and the first on / off valve 414 are examples of a "first supply unit" in this embodiment. Furthermore, the tank 400 may also be included in the first supply unit. Additionally, the filter and the second on / off valve 418 are examples of a "second supply unit" in this embodiment. Furthermore, the storage unit 402 and the heating unit 404 (described later) may also be included in the second supply unit.

[0100] Furthermore, the tank 400 described above is an example of a "fluid supply source" in this embodiment. In other words, the fluid supply source is not limited to the tank 400, as long as it can supply inert gas to the supply pipe 410; other structures may also be used.

[0101] (Inert gas exhaust system)

[0102] like Figure 5 As shown, the inert gas exhaust system 344 includes: an exhaust pipe 430, a second three-way valve 432, a third three-way valve 434, a bypass pipe 440, a second inlet pipe 436, a second outlet pipe 438, an exhaust pipe 442, a third on / off valve 446, and a vacuum pump 406.

[0103] One end of the discharge pipe 430 is connected to the loading interlock chamber 122, enabling the fluid (including air, inert gas, and processing gas) inside the loading interlock chamber 122 to flow. A second three-way valve 432 is provided at the other end of the discharge pipe 430.

[0104] The second three-way valve 432 is a structural component that connects the ends of the discharge pipe 430, the second inlet pipe 436, and the bypass pipe 440, so that the fluid flowing in the discharge pipe 430 flows to the second inlet pipe 436 or the bypass pipe 440.

[0105] The bypass pipe 440 is a component that connects the second three-way valve 432 and the third three-way valve 434, enabling fluid to flow from the second three-way valve 432 to the third three-way valve 434.

[0106] The second inlet pipe 436 is a component connected to the second three-way valve 432 and the storage section 402, which enables inert gas to flow from the second three-way valve 432 to the storage section 402.

[0107] The second ejector pipe 438 is a component that connects the storage section 402 to the third three-way valve 434, enabling inert gas to flow from the storage section 402 to the third three-way valve 434.

[0108] The third three-way valve 434 is a structural component that connects the ends of the second ejector pipe 438, the bypass pipe 440 and the exhaust pipe 442, so that the fluid flowing in the second ejector pipe 438 or the bypass pipe 440 flows to the exhaust pipe 442.

[0109] The exhaust pipe 442 is a component that connects the third three-way valve 434 and the third on-off valve 446. A vacuum pump 406 and a second filter 444 are arranged sequentially from the side of the third three-way valve 434.

[0110] Vacuum pump 406 is a device that delivers fluid from the upstream side (the side of the third three-way valve 434) of exhaust pipe 442 to the downstream side (the side of the third on / off valve 446). That is, when vacuum pump 406 is operating, the fluid inside the pipe body of exhaust pipe 442 that is upstream of vacuum pump 406 (including bypass pipe 440, second ejector pipe 438, second inlet pipe 420, and discharge pipe 430) is delivered to the downstream side (the side of the second on / off valve 418) of vacuum pump 406.

[0111] As described below, the second filter 444 is a component that removes impurities contained in the fluid (containing inert gas) flowing in the exhaust pipe 442. Furthermore, the second filter 444 is heat-resistant and will not be damaged even when subjected to inert gas heated to the temperature at which the substrate 200 is processed in the substrate processing apparatus 10.

[0112] The third on / off valve 446 is a structural component that opens and closes the flow path of the exhaust pipe 442, and can control the fluid flow to the exhaust pipe 442 on the downstream side of the second filter 444.

[0113] Furthermore, the exhaust pipe 442 opens to the outside of the substrate processing apparatus 10 at a position downstream of the third on / off valve 446. In other words, the fluid flowing in the exhaust pipe 442 is discharged into the atmospheric space.

[0114] Furthermore, in this embodiment, the fluid flow path from the discharge pipe 430 to the exhaust pipe 442 is switched by the operation of the second three-way valve 432 and the third three-way valve 434. That is, the combination of the operation of the second three-way valve 432 and the third three-way valve 434 is an example of the discharge destination switching valve in this embodiment.

[0115] Furthermore, the inert gas exhaust system 344 described above is an example of the "exhaust fluid discharge section" in this embodiment. In other words, the exhaust fluid discharge section is not limited to the structure of the inert gas exhaust system 344 described above, as long as it can discharge the fluid inside the loading interlock chamber 122; other structures can also be used. Additionally, the discharge section may include a vacuum pump 406.

[0116] (Accumulation Department)

[0117] like Figure 5 and Figure 6 As shown, the accumulation section 402 is a can-shaped structural component having a housing 407 and a heat insulation component 408. Furthermore, the accumulation section 402 is connected to a first inlet pipe 420, a second inlet pipe 436, a first outlet pipe 422, and a second outlet pipe 438. That is, the accumulation section 402 is a structural component that accumulates inert gas inside the housing 407 by allowing inert gas to flow inward through the first inlet pipe 420 and the second inlet pipe 436. Additionally, the accumulation section 402 is a structural component that allows the inert gas accumulated inside the housing 407 to flow out through the first outlet pipe 422 and the second outlet pipe 438.

[0118] In addition, such as Figure 6 As shown, the housing 407 is surrounded by a heat-insulating member 408, which is an example of a heat-insulating material in this embodiment. Therefore, the inert gas stored inside the storage section 402 maintains its temperature.

[0119] In addition, such as Figure 5 and Figure 6 As shown, the storage unit 402 in this embodiment has a heating unit 404 inside. The heating unit 404 is a structural component that heats the inert gas stored inside the storage unit 402. As an example, it is a heater that generates heat when powered by a power source not shown.

[0120] Furthermore, in this embodiment, all active components in the preheating and cooling system 340 are controlled by the control unit 500. In other words, the first on / off valve 414, the first three-way valve 416, the second on / off valve 418, the second three-way valve 432, the third three-way valve 434, the third on / off valve 446, the MFC 412, the vacuum pump 406, and the heating unit 404 can all switch their operating states by being controlled by the control unit 500.

[0121] Furthermore, in the substrate processing apparatus 10 of this embodiment, a preheating and cooling system 340 is provided with a loading interlock chamber 122. For example, such as... Figure 1 As shown, the substrate processing apparatus 10 in this embodiment has two loading interlock chambers 122, therefore, a total of two preheating and cooling systems 340 are provided in each loading interlock chamber 122. Furthermore, the tank 400 may also share the two preheating and cooling systems 340.

[0122] Furthermore, in the aforementioned inert gas supply system 342, the source of inert gas supply is not limited to tank 400. For example, supply pipe 410 may be configured to connect to inert gas supply pipe 251a and inert gas supply pipe 271a instead of tank 400, thereby supplying inert gas.

[0123] Next, as a step in the semiconductor manufacturing process, a substrate processing step in which the substrate processing apparatus 10 using the above-described structure processes the substrate 200 will be described. Furthermore, in the following description, the operation of each component constituting the substrate processing apparatus 10 is controlled by the control unit 500.

[0124] Here, as a substrate processing step, it is also referred to Figure 7 and Figure 8 The process of forming a thin film on substrate 200 will be described. Furthermore, as an example, N2 gas is used as the inert gas in this embodiment.

[0125] (Method for manufacturing semiconductor devices)

[0126] The semiconductor manufacturing method of this embodiment includes the following steps: removing an unprocessed substrate 200 from a die cassette 100 and transferring the unprocessed substrate 200 to a loading interlock chamber 122; and preheating the unprocessed substrate 200 in the loading interlock chamber 122. Furthermore, the semiconductor manufacturing method of this embodiment also includes the following steps: transferring the unprocessed substrate 200 to a processing chamber 202; processing the unprocessed substrate 200 in the processing chamber 202; and transferring the processed substrate 200 to the loading interlock chamber 122. Additionally, the semiconductor manufacturing method of this embodiment also includes the following steps: cooling the processed substrate 200 in the loading interlock chamber 122; and transferring the processed substrate 200 to an atmospheric transport chamber and storing the processed substrate 200 in the die cassette 100. Furthermore, the CPU 501 of the control unit 500 reads a program stored in the ROM 503 and executes these steps according to the read program process.

[0127] Furthermore, in the process described below, unless otherwise specified, the processing of the first (first) unprocessed substrate 200 will be described in the production (mass production) process where multiple unprocessed substrates 200 are processed sequentially. The description of the second and subsequent unprocessed substrates 200 will be provided later.

[0128] (The process of removing the unprocessed substrate from the crystal cell and transferring the unprocessed substrate to the loading interlock chamber)

[0129] In the process of removing the unprocessed substrate 200 from the cassette 100 and transferring it to the loading interlock chamber 122, the interior of the loading interlock chamber 122 is switched to atmospheric pressure while gate valves 128 and 160 are closed. Then, the atmospheric transport robot 124 removes the unprocessed substrate 200 from the cassette 100 placed on the IO stage 105. After opening gate valve 128, the atmospheric transport robot 124 places the removed unprocessed substrate 200 onto the substrate placement stage 150 of the loading interlock chamber 122. Then, gate valve 128 of the loading interlock chamber 122 is closed.

[0130] (The process of preheating the untreated substrate in the loading interlock chamber)

[0131] Next, in the process of preheating the unprocessed substrate 200 in the loading interlock chamber 122, the control unit 500 preheats the unprocessed substrate 200. Furthermore, in this description, "preheating" refers to a process of heating the substrate 200 to a temperature higher than the ambient temperature, although lower than the temperature at which the substrate 200 is processed in the processing chamber 202. (See reference...) Figure 7The process executed by the control unit 500 will be explained. In addition, at the time when the unprocessed substrate 200 is transported to the loading interlock chamber 122 (before step S102), the first on / off valve 414, the second on / off valve 418, and the third on / off valve 446 are all closed.

[0132] First, in step S102, the control unit 500 vents the loading interlock chamber 122. More specifically, the control unit 500 starts the vacuum pump 406 and controls the third on / off valve 446 to open it. Additionally, the control unit 500 controls the second three-way valve 432 to connect the discharge pipe 430 to the bypass pipe 440, and controls the third three-way valve 434 to connect the bypass pipe 440 to the exhaust pipe 442. As a result, the control unit 500 vents the fluid (atmosphere, etc.) inside the loading interlock chamber 122, creating a vacuum (lower pressure than atmospheric pressure) inside the loading interlock chamber 122. Then, the control unit 500 proceeds to step S104.

[0133] Next, in step S104, the control unit 500 switches the flow path of the inert gas supply system 342. More specifically, the control unit 500 controls the first on / off valve 414 to open, and controls the first three-way valve 416 to connect the supply pipe 410 to the first inlet pipe 420, allowing N2 gas to flow into the storage unit 402. Then, the control unit 500 proceeds to step S106.

[0134] Next, in step S106, the control unit 500 measures the temperature of the N2 gas in the storage unit 402 and determines whether it is above a predetermined temperature (threshold). Then, if the control unit 500 makes an affirmative determination in step S106, it proceeds to step S110. On the other hand, if the control unit 500 makes a negative determination in step S106, it proceeds to step S108.

[0135] Next, in step S108, the control unit 500 heats the N2 gas in the storage unit 402. More specifically, the control unit 500 heats the N2 gas in the control unit 500 by controlling the heating unit 404 to generate heat. Then, after a predetermined time, the control unit 500 proceeds to step S106.

[0136] Next, in step S110, the control unit 500 begins supplying N2 gas from the storage unit 402 to the loading interlock chamber 122. More specifically, the control unit 500 opens the second on / off valve 418, thereby connecting the storage unit 402 to the loading interlock chamber 122 via the first discharge pipe 422. Additionally, N2 gas is supplied from the tank 400 to the storage unit 402 via the first inlet pipe 420. Since the pressure inside the storage unit 402 exceeds that in the loading interlock chamber 122, the N2 gas inside the storage unit 402 flows into the loading interlock chamber 122. Then, the control unit 500 proceeds to step S112.

[0137] Next, in step S112, the control unit 500 determines whether the temperature of the unprocessed substrate 200 placed on the substrate mounting stage 150 in the loading interlock chamber 122 is above a predetermined temperature (threshold). Then, if the control unit 500 makes an affirmative determination in step S112, it proceeds to step S114. Conversely, if the control unit 500 makes a negative determination in step S112, it repeats step S112. In other words, in step S112, the control unit 500 allows N2 gas to flow from the accumulation unit 402 to the loading interlock chamber 122 until the temperature of the unprocessed substrate 200 exceeds the predetermined temperature.

[0138] Next, the control unit 500 stops the supply of N2 gas in step S114. More specifically, the control unit 500 controls the first on / off valve 414 and the second on / off valve 418, closing both valves. As a result, the N2 gas inside the interlock chamber 122 is discharged.

[0139] (The process of moving unprocessed substrates to the processing room)

[0140] Next, in the process of transferring the unprocessed substrate 200 to the processing chamber 202, the control unit 500 opens the gate valve 160 of the loading interlock chamber 122 and operates the vacuum transfer robot 112 to transfer the substrate 200 placed on the substrate placement stage 150 in the loading interlock chamber 122 to a certain processing chamber 202. After the substrate 200 is transferred to the processing chamber 202, the vacuum transfer robot 112 is moved outside the processing container 203, and the gate valve 161 is closed to seal the processing container 203. Then, the control unit 500 raises the substrate placement stage 212, thereby placing the substrate 200 on the substrate placement surface provided on the substrate placement stage 212. Furthermore, by raising the substrate placement stage 212, the substrate 200 is raised to the processing position (substrate processing position) within the processing chamber 202.

[0141] Additionally, when the substrate 200 rises to the substrate processing position, the control unit 500 activates the exhaust system 223, connecting the exhaust buffer chamber 209 to the vacuum pump 224. The exhaust system 223 controls the exhaust flow rate of the exhaust buffer chamber 209 based on the vacuum pump 224 by adjusting the flow guide of the exhaust pipe, maintaining the processing chamber 202 connected to the exhaust buffer chamber 209 at a specified pressure.

[0142] (The process of processing untreated substrates in the processing chamber)

[0143] Next, in the process of processing the unprocessed substrate 200 in the processing chamber 202, the control unit 500 performs a film-forming process on the substrate 200. More specifically, firstly, the control unit 500 supplies power to the heater 213 embedded inside the substrate mounting stage 212 on which the substrate 200 is placed, and controls the surface of the substrate 200 to reach a predetermined processing temperature.

[0144] Next, the control unit 500 supplies raw material gas (first gas) and reactant gas (second gas) alternately according to a prescribed process (process) to form a desired film on the substrate 200. Furthermore, the supply amount, supply period, processing time, and processing temperature of the raw material gas and reactant gas are appropriately determined according to the prescribed process (process).

[0145] (The process of transferring the processed substrate to the loading interlock chamber)

[0146] Next, in the process of transferring the processed substrate 200 to the loading interlock chamber 122, the control unit 500 transfers the processed substrate 200 from the processing chamber 202 to the loading interlock chamber 122 in a process reversed from the above-described process. More specifically, the control unit 500 first lowers the substrate mounting stage 212 from the substrate processing position to the substrate transfer position. Then, the control unit 500 opens the gate valve 160 of the loading interlock chamber 122 and operates the vacuum transfer robot 112 to transfer the processed substrate 200 from the substrate mounting stage 212 to the substrate mounting stage 150 of the loading interlock chamber 122. At this time, the loading interlock chamber 122 switches from atmospheric pressure to vacuum pressure.

[0147] (The process of cooling the substrate in the loading interlock chamber 122)

[0148] Next, in the process of cooling the substrate 200 in the loading interlock chamber 122, the control unit 500 cools the untreated substrate 200. (See reference...) Figure 8 The process executed by the control unit 500 will be explained. In addition, at the time when the processed substrate 200 is transported to the loading interlock chamber 122 (before step S202), the first on / off valve 414, the second on / off valve 418, and the third on / off valve 446 are all closed.

[0149] First, in step S202, the control unit 500 switches the flow path of the inert gas supply system 342. More specifically, the control unit 500 controls the first three-way valve 416 to disconnect the supply pipe 410 from the first inlet pipe 420, switching the flow path so that the inert gas flows from the tank 400 to the loading interlock chamber 122 without passing through the accumulation section 402. Then, the control unit 500 proceeds to step S204. Here, the inert gas is, for example, N2 gas. In this embodiment, the inert gas is referred to as N2 gas.

[0150] Next, in step S204, the control unit 500 begins supplying N2 gas from the tank 400 to the loading interlock chamber 122. More specifically, the control unit 500 controls the first on / off valve 414 to supply N2 gas from the tank 400 to the loading interlock chamber 122.

[0151] Furthermore, the processed substrate 200, transported from the processing chamber 202, is heated to the processing temperature by the film formation process, and therefore has a higher temperature than the N2 gas supplied from the tank 400 to the loading interlock chamber 122. In other words, in step S204, the processed substrate 200 is cooled by the N2 gas supplied from the tank 400 to the loading interlock chamber 122. Then, the control unit 500 proceeds to step S206.

[0152] Next, in step S206, the control unit 500 moves the N2 gas inside the loading interlock chamber 122 from the loading interlock chamber 122 to the storage unit 402. More specifically, the control unit 500 controls the second three-way valve 432 to connect the discharge pipe 430 to the second inlet pipe 436, and controls the third three-way valve 434 to connect the bypass pipe 440 to the exhaust pipe 442. N2 gas is supplied from the tank 400 to the loading interlock chamber 122 through the supply pipe 410. The pressure inside the loading interlock chamber 122 exceeds that of the storage unit 402, so the N2 gas heated by cooling the processed substrate inside the loading interlock chamber 122 flows to the storage unit 402. Then, the control unit 500 proceeds to step S208.

[0153] Next, in step S208, the control unit 500 determines whether the temperature of the processed substrate 200 is above a predetermined temperature (threshold). Then, if the control unit 500 makes an affirmative determination in step S208, it proceeds to step S210. On the other hand, if the control unit 500 makes a negative determination in step S208, it proceeds to step S214.

[0154] Next, in step S210, the control unit 500 determines whether the N2 gas accumulated in the storage unit 402, which was heated by the substrate after the cooling process, is full. Then, if the control unit 500 makes an affirmative determination in step S210, it proceeds to step S212. On the other hand, if the control unit 500 makes a negative determination in step S210, it proceeds to step S208.

[0155] Next, in step S212, the control unit 500 switches the destination of the N2 gas to the discharge unit. More specifically, the control unit 500 controls the second three-way valve 432 to connect the discharge pipe 430 to the bypass pipe 440, and controls the third on / off valve 446 to open it. Additionally, the control unit 500 controls the vacuum pump 406 to discharge N2 gas from the loading interlock chamber 122 into the atmosphere through the exhaust pipe 442. Then, the control unit 500 proceeds to step S208. That is, when the heated N2 gas fills the storage unit 402, the supply to the storage unit 402 is stopped, and the heated N2 is discharged to the discharge unit.

[0156] That is, in this embodiment, the control unit 500 cools the substrate 200 with N2 gas through the processes of steps S208 to S212.

[0157] In addition, in step S214, the control unit 500 stops the supply of N2 gas from the tank 400 to the loading interlock chamber 122. More specifically, the control unit 500 controls the first on / off valve 414 to close the first on / off valve 414, thereby stopping the flow of N2 gas supplied from the tank 400.

[0158] (The process of moving the processed substrate to the atmospheric transport chamber and storing the processed substrate in the cell)

[0159] Next, in the process of transferring the processed substrate 200 to the atmospheric transfer chamber 121 and storing the processed substrate 200 in the cassette 100, the control unit 500, after restoring the loading interlock chamber to atmospheric pressure, opens the gate valve 128 of the loading interlock chamber 122 and operates the atmospheric transfer robot 124 to transfer the processed substrate 200 to the atmospheric transfer chamber 121. Furthermore, the atmospheric transfer robot 124 stores the processed substrate 200 in the cassette 100 placed on the IO worktable 105.

[0160] In the semiconductor device manufacturing method of this embodiment, the first substrate 200 is processed using the substrate processing apparatus 10 through the above steps. Furthermore, in the semiconductor device manufacturing method of this embodiment, the processing steps for the second substrate 200 sometimes differ partially from the processing steps for the first unprocessed substrate 200 described above.

[0161] (Processing steps for the second and subsequent substrates)

[0162] Specifically, when processing the second unprocessed substrate 200, the first processed substrate 200 is cooled, and the heated inert gas is stored in the storage section 402. Therefore, in Figure 7 In step S106, sometimes a negative determination is not made. That is, when the second unprocessed substrate 200 is being processed, at the time when the unprocessed substrate 200 is transported to the loading interlock chamber 122 (before step S102), high-temperature inert gas is stored inside the accumulation section 402, so sometimes it is not necessary to heat the inert gas.

[0163] In other words, when the unprocessed substrate 200 is the second or subsequent sheet, the control unit 500 heats the second unprocessed substrate 200 by supplying an inert gas stored in the storage unit 402, wherein the inert gas is an inert gas heated by cooling the first processed substrate 200.

[0164] The other processes are the same as those for the first substrate 200.

[0165] In addition, such as Figure 1 As shown, the substrate processing apparatus 10 in this embodiment has a plurality of ( Figure 1 There are 4 processing chambers 202 and multiple loading interlock chambers 122. Figure 1 Since there are two of them, the accumulation section 402 also has two. Therefore, in cases where a next substrate 200 is moved in during the processing of the unprocessed substrate 200, or when the heated inert gas is not accumulated in the accumulation section 402 at the time when the unprocessed substrate 200 is moved into the loading interlock chamber 122, the process for the second unprocessed substrate 200 is the same as for the first one.

[0166] Through the above process, in the semiconductor device manufacturing method of this embodiment, the substrate 200 after heat treatment is cooled by inert gas supplied to the loading interlock chamber 122. In other words, the inert gas supplied from the tank 400 without passing through the accumulation section 402 is an example of the cooling fluid in this embodiment. Furthermore, it can be said that the inert gas supplied from the tank 400 without passing through the accumulation section 402 is supplied by the first supply section. That is, the inert gas supplied from the first supply section is an example of the fluid used to cool the heat-treated substrate 200.

[0167] In other words, the structure that supplies inert gas to the substrate mounting stage 150 in the loading interlock chamber 122 can be considered an example of a cooling section of the substrate mounting stage 150. That is, the loading interlock chamber 122 in this embodiment can be said to cool the processed substrate 200 by means of a cooling section formed in the substrate mounting stage 150.

[0168] Furthermore, the substrate mounting stage 150 of the loading interlock chamber 122 has a cooling section for cooling the substrate, and the substrate is cooled by the cooling section of the substrate mounting stage 150. Moreover, the cooling section is a structure that supplies fluid flow for cooling the substrate, and an inert gas can be used as the fluid. In other words, the structure of supplying inert gas to the substrate mounting stage 150 in the loading interlock chamber 122 can be considered an example of the cooling section constituted in the substrate mounting stage 150. Alternatively, the substrate can be cooled using both the inert gas supplied to the loading interlock chamber 122 and the cooling section constituted in the substrate mounting stage 150.

[0169] Furthermore, in this embodiment, the control unit 500 stores the inert gas volume inside the loading interlock chamber 122 in the storage unit 402 via the process control unit 522. More specifically, the second three-way valve 432 is controlled to connect the discharge pipe 430 to the second inlet pipe 436, and the third three-way valve 434 is controlled to connect the bypass pipe 440 to the exhaust pipe 442, thereby storing the inert gas volume inside the loading interlock chamber 122 in the storage unit 402.

[0170] Furthermore, as described above, since the processed substrate 200 is at a higher temperature than the inert gas supplied to the loading interlock chamber 122, the inert gas supplied to the loading interlock chamber 122 is heated by the processed substrate 200. Therefore, the inert gas accumulated inside the storage section 402 is at a higher temperature than the inert gas supplied from the tank 400. In other words, the inert gas accumulated inside the storage section 402 is an example of the fluid heated by the cooled and heated substrate 200 in this embodiment.

[0171] Furthermore, when performing the process of forming a thin film on the substrate 200 using the substrate processing apparatus 10 of this embodiment, the substrate 200 is transported from the cell 100 to the loading interlock chamber 122 through the atmospheric transport chamber and placed on the substrate mounting stage 150. However, the unprocessed substrate 200 placed on the substrate mounting stage 150 in the loading interlock chamber 122 becomes the outside of the processing chamber 202, i.e., at room temperature.

[0172] In this embodiment, the control unit 500 supplies inert gas to the untreated substrate 200 placed on the substrate mounting stage 150 via the supply pipe 410 through the process control unit 522, thereby supplying inert gas to the treated substrate 200 at room temperature. More specifically, the control unit 500 controls the first three-way valve 416 to connect the upstream side of the supply pipe 410 and the first inlet pipe 420 side, and controls the second on / off valve 418 to open the first ejection pipe 422. As a result, the control unit 500 causes the inert gas supplied from the tank 400 to flow through the accumulation unit 402 to the loading interlock chamber 122.

[0173] Here, as described above, by cooling the processed substrate 200, an inert gas that has reached a high temperature is accumulated in the accumulation section 402. Therefore, the inert gas supplied to the loading interlock chamber 122 also reaches a high temperature. In other words, the inert gas supplied via the accumulation section 402 is an example of a fluid that heats the space within the loading interlock chamber 122 in this embodiment. Furthermore, it can be said that the inert gas supplied via the accumulation section 402 is supplied by the second supply section. That is, the inert gas supplied from the second supply section is an example of a fluid that heats the unprocessed substrate 200 that has not undergone heat treatment.

[0174] Furthermore, in this embodiment, the control unit 500 discharges the inert gas inside the loading interlock chamber 122 to the atmosphere via the process control unit 522. More specifically, the discharge pipe 430 is connected to the bypass pipe 440 by controlling the second three-way valve 432, and the bypass pipe 440 is connected to the exhaust pipe 442 by controlling the third three-way valve 434, thereby allowing the fluid to flow to the exhaust pipe 442. In addition, the control unit 500 controls the third on / off valve 446 to open the exhaust pipe 442 to the outside, and operates the vacuum pump 406 to transport the fluid inside the exhaust pipe 442 downstream, thereby discharging it into the atmosphere.

[0175] Thus, in this embodiment, when the substrate 200 brought into the loading interlock chamber 122 is a processed substrate 200, the control unit 500 supplies inert gas from the first supply unit to cool the substrate 200. Conversely, when the substrate 200 brought into the loading interlock chamber 122 is an unprocessed substrate 200, the control unit 500 supplies inert gas from the second supply unit to heat the substrate 200. In other words, the control unit 500 of this embodiment switches between the first supply unit and the second supply unit depending on the state of the substrate 200 brought into the loading interlock chamber 122.

[0176] In addition, during the preheating operation, if the temperature of the inert gas inside the storage unit 402 is lower than a predetermined temperature, the control unit 500 can activate the heating unit 404 to heat the inert gas inside the storage unit 402.

[0177] According to this embodiment, one or more of the following effects are achieved.

[0178] (Functions and Effects)

[0179] According to the substrate processing apparatus 10 of this embodiment, fluid heated by cooling the processed substrate 200 placed in the loading interlock chamber 122 is stored in the storage unit 402. The stored fluid is supplied to the loading interlock chamber 122 and used to heat the unprocessed substrate 200 placed in the loading interlock chamber 122, thereby reducing the amount of fluid used. Furthermore, according to the substrate processing apparatus 10 of this embodiment, by preheating the unprocessed substrate 200, the heating time of the substrate 200 in the processing chamber 202 can be shortened, and the power consumption for heating the substrate 200 can be reduced. Additionally, according to the substrate processing apparatus 10 of this embodiment, by shortening the heating time of the substrate 200, productivity efficiency can be improved.

[0180] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by using an inert gas as a fluid for cooling the processed substrate 200 or heating the unprocessed substrate 200, the impact on the surface of the substrate 200 can be suppressed.

[0181] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by using the heated and held fluid stored in the storage section 402 to heat the unprocessed substrate 200, the amount of fluid used can be reduced. In addition, by preheating the unprocessed substrate 200 in the loading interlock chamber 122, the heating time of the substrate 200 during processing in the processing chamber 202 can be shortened, which can help improve productivity.

[0182] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by switching the discharge destination switching valve, unheated fluid can be discharged into the atmospheric space, and heated fluid can be directed to the storage unit 402.

[0183] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by switching the supply source switching valve, the heated fluid can flow from the storage section 402 to the loading interlock chamber 122 to heat the unprocessed substrate 200, or the cooled fluid can flow from the tank 400 through the supply pipe 410 to the loading interlock chamber 122 to cool the processed substrate 200.

[0184] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by cooling the loading interlock chamber 122, the effects associated with heating the components within the loading interlock chamber 122 can be suppressed.

[0185] In addition, the substrate processing apparatus 10 according to this embodiment has a cooling section on the substrate stage 150, which, when used with a cooling fluid, can help reduce the cooling time of the processed substrate 200 after heat treatment.

[0186] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by cooling the substrate 200 that has been heated using a fluid, the impact on the surface of the substrate 200 can be suppressed.

[0187] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by heating the loading interlock chamber 122 with the fluid stored in the storage section 402, the amount of fluid used can be reduced.

[0188] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by heating the unprocessed substrate 200 using the fluid stored in the storage section 402, the amount of fluid used can be reduced.

[0189] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by measuring the temperature inside the loading interlock chamber 122, the amount of heated fluid supplied to the loading interlock chamber 122 can be controlled.

[0190] Furthermore, according to the substrate processing apparatus 10 in this embodiment, by measuring the pressure inside the loading interlock chamber 122, the amount of heated fluid supplied to the loading interlock chamber 122 can be controlled.

[0191] Furthermore, according to the substrate processing apparatus 10 in this embodiment, the operator can confirm the state of the fluid supplied to the loading interlock chamber 122.

[0192] Furthermore, the substrate processing apparatus 10 of this embodiment also includes a heating unit 404 for heating the fluid flowing from the substrate 200 to the container. This allows the temperature of the fluid flowing from the accumulation unit 402 to the container to be set to a desired value, thereby improving the quality of the substrate processing step.

[0193] Furthermore, the semiconductor device manufacturing method of this embodiment includes the following steps: heating a substrate 200 in a processing chamber 202; placing the processed substrate 200, which has been removed from the processing chamber 202, into a container; cooling the processed substrate 200 placed in the container using fluid supplied from a supply unit; accumulating the fluid heated after cooling the processed substrate 200 in an accumulation unit 402; and supplying the fluid accumulated in the accumulation unit 402 to an unprocessed substrate 200 stored in the processing chamber 202 to heat the unprocessed substrate 200.

[0194] According to the semiconductor device manufacturing method of this embodiment, by preheating the unprocessed substrate in the loading interlock chamber 122, the heating time of the substrate 200 in the processing chamber 202 can be shortened, thereby improving productivity.

[0195] In addition, the procedure of this embodiment causes the control unit 500 to perform the following process: heat the substrate 200 in the processing chamber 202; place the processed substrate 200, which has been removed from the processing chamber 202, into a container; cool the processed substrate 200 placed in the container using fluid supplied from the supply unit; accumulate the fluid that has been cooled and heated in the storage unit 402; and supply the fluid accumulated in the storage unit 402 to the unprocessed substrate 200 stored in the processing chamber 202 to heat the unprocessed substrate 200.

[0196] According to the procedure of this embodiment, by preheating the unprocessed substrate in the loading interlock chamber 122, the heating time of the substrate 200 in the processing chamber 202 can be shortened, thereby improving productivity.

[0197] Furthermore, in the above description, the fluid supplied from tank 400 to loading interlock chamber 122 is an inert gas, but the technology of this disclosure is not limited to this. For example, processing gas or compressed air may be supplied instead of the inert gas.

[0198] Furthermore, in the above description, the storage section 402 is surrounded by the heat insulation member 408 around the housing 407, but the technology disclosed herein is not limited to this. For example, the storage section 402 may also be configured without the heat insulation member 408.

[0199] Furthermore, in the above description, the inert gas discharge system 344 includes a discharge pipe 430, a second three-way valve 432, and a third three-way valve 434, but the technology disclosed herein is not limited to this. For example, the inert gas discharge system 344 may not have the second three-way valve 432 or the third three-way valve 434, but may instead be configured as a piping from which fluid flows directly from the loading interlock chamber 122 to the storage section 402 and a piping from which fluid is directly discharged from the loading interlock chamber 122.

[0200] Furthermore, in the above description, the substrate 200 placed inside the loading interlock chamber 122 on the substrate mounting stage 150 is heated or cooled by supplying fluid into the loading interlock chamber 122, but the technology disclosed herein is not limited to this. For example, the fluid may also heat or cool the substrate 200 from outside the loading interlock chamber 122 via a heat conduction component.

[0201] Furthermore, in the above description, the substrate processing apparatus 10 has a temperature sensor 302 in the loading interlock chamber 122, but the technology disclosed herein is not limited to this. For example, the substrate processing apparatus 10 may not have a temperature sensor 302 in the loading interlock chamber 122, and instead the control unit 500 may control the flow rate of the fluid based on a predetermined time elapsed.

[0202] Furthermore, in the above description, the substrate processing apparatus 10 has a pressure sensor 304 in the loading interlock chamber 122, but the technology disclosed herein is not limited to this. For example, the substrate processing apparatus 10 may not have a pressure sensor 304 in the loading interlock chamber 122, and instead the control unit 500 may control the flow rate of the fluid based on a predetermined time elapsed.

[0203] Furthermore, in the above description, the various structures of the substrate processing apparatus 10 are schematically shown in the display unit 518, but the technology disclosed herein is not limited thereto. For example, the display unit 518 may not have a screen display, and the conveying mechanism may instead use the lighting and extinguishing of lamps for indication. Alternatively, the substrate processing apparatus 10 may not have a display unit 518.

[0204] Furthermore, in the above description, the heating unit 404 is disposed inside the storage unit 402, but the technology disclosed herein is not limited thereto. For example, the heating unit 404 may also be disposed in the first inlet pipe 420, the second inlet pipe 436, or the first outlet pipe 422 to heat the fluid flowing in the pipe. Alternatively, the heating unit 404 may also be disposed in the supply pipe 410 at a position downstream of the connection with the first outlet pipe 422 to heat the fluid flowing in the supply pipe 410.

[0205] Furthermore, in the above description, the program is stored in the storage unit, but the method of providing the program disclosed herein is not limited to this. For example, the program may also be recorded on a computer-readable storage medium and provided together with that storage medium.

[0206] Regarding these variations, productivity can also be improved by shortening the heating time of the substrate 200.

[0207] Furthermore, the above-described method illustrates an example of forming a film using a single-sheet substrate processing apparatus 10 that processes one or more substrates 200 at a time. This disclosure is not limited to the above method; for example, it can also be appropriately applied when forming a film using a batch-type substrate processing apparatus 10 that processes multiple substrates 200 at a time. Additionally, the above-described method illustrates an example of forming a film using a substrate processing apparatus 10 equipped with a cold-wall type processing furnace. This disclosure is not limited to the above method; it can also be appropriately applied when forming a film using a substrate processing apparatus 10 equipped with a hot-wall type processing furnace.

[0208] When using these substrate processing apparatus 10, each processing can be performed in the same manner or modified example as described above, under the same processing procedures and conditions, and the same effect as described above can be obtained.

[0209] [Other variations]

[0210] The various embodiments of this disclosure have been described in detail above, but this disclosure is not limited to the above embodiments and various changes can be made without departing from its core essence.

[0211] For example, in the above embodiments, film formation is cited as an example of the processing performed by the substrate processing apparatus, but this disclosure is not limited to this. That is, in addition to the film formation processes exemplified in each embodiment, this disclosure can also be applied to film formation processes other than the thin films exemplified in each embodiment. Furthermore, the specific content of the substrate processing is not limited, and in addition to film formation processes, it can also be applied to other substrate processing processes such as annealing, diffusion, oxidation, and nitriding. Moreover, this disclosure can also be applied to other substrate processing apparatuses, such as annealing apparatuses, etching apparatuses, oxidation apparatuses, nitriding apparatuses, exposure apparatuses, coating apparatuses, drying apparatuses, heating apparatuses, plasma processing apparatuses, and other substrate processing apparatuses. In addition, this disclosure can also include a combination of these apparatuses. Furthermore, a portion of the structure of a certain embodiment can be replaced with the structure of another embodiment, and a structure of another embodiment can be added to the structure of a certain embodiment. In addition, for a portion of the structure of each embodiment, other structures can be added, deleted, or replaced.

[0212] Symbol Explanation

[0213] 10. Substrate processing apparatus

[0214] 122 Load the interlock chamber (container)

[0215] 200 substrates

[0216] 202 Processing Room

[0217] 500 Control Department

[0218] 342 Inert Gas Supply System (Supply Department)

[0219] 344 Inert gas exhaust system (exhaust section)

[0220] 402 Accumulation Department.

Claims

1. A substrate processing apparatus, characterized in that, have: The processing chamber is used to heat-treat the substrate; A container holding an unprocessed substrate to be moved into the processing chamber or a processed substrate to be moved out of the processing chamber; A supply unit supplies fluid that heats the untreated substrate placed in the container or cools the treated substrate. A discharge section that discharges the fluid from the container; An accumulation section that accumulates the fluid heated by cooling the processed substrate; as well as The control unit is capable of controlling the supply of the fluid stored in the storage unit to the container to heat the untreated substrate.

2. The substrate processing apparatus according to claim 1, characterized in that, The fluid is an inert gas.

3. The substrate processing apparatus according to claim 1, characterized in that, The storage section includes: a heat-insulating material that maintains the temperature of the heated fluid.

4. The substrate processing apparatus according to claim 1, characterized in that, The discharge section includes a discharge pipe and a discharge destination switching valve. The control unit can control the fluid to be stored in the storage unit through the discharge pipe by switching the discharge destination switching valve.

5. The substrate processing apparatus according to claim 4, characterized in that, The control unit is capable of controlling the following: when the processed substrate after heat treatment is moved into the container, the cooling fluid is supplied from the supply unit, and the discharge destination switching valve is switched to store the fluid heated by cooling the processed substrate in the storage unit.

6. The substrate processing apparatus according to claim 4, characterized in that, The control unit is capable of controlling the following: when the untreated substrate is moved into the container, switching the discharge destination switching valve to discharge the fluid inside the container from the discharge unit to the atmospheric space.

7. The substrate processing apparatus according to claim 1, characterized in that, The supply unit includes: a supply pipe connected to a fluid supply source, and a supply source switching valve. The control unit is capable of controlling the following: by switching the supply source switching valve, supplying the fluid heated by the supply pipe from the storage unit to the container, or causing cold fluid to flow from the fluid supply source to the container through the supply pipe.

8. The substrate processing apparatus according to claim 7, characterized in that, The supply unit includes: a first supply unit that supplies the cooled fluid. The control unit is capable of controlling the following: when the processed substrate after heat treatment is moved into the container, the supply source switching valve of the first supply unit is switched to supply fluid from the supply unit.

9. The substrate processing apparatus according to claim 7, characterized in that, The supply unit includes a second supply unit that supplies the heated fluid. The control unit is capable of controlling the following: when the unprocessed substrate is moved into the container, switching the supply source switching valve of the second supply unit to supply the fluid from the accumulation unit.

10. The substrate processing apparatus according to claim 1, characterized in that, The supply unit includes: a first supply unit that supplies the fluid for cooling the substrate; and a second supply unit that supplies the fluid for heating the substrate. The control unit is capable of switching between the first supply unit and the second supply unit based on the state of the substrate moved into the container.

11. The substrate processing apparatus according to claim 10, characterized in that, The container has: a substrate mounting stage for mounting a substrate. The processed substrate after heat treatment is cooled by a cooling section formed in the substrate stage and a fluid that cools the substrate.

12. The substrate processing apparatus according to claim 10, characterized in that, The fluid supplied from the first supply unit is a fluid used to cool the processed substrate after heat treatment.

13. The substrate processing apparatus according to claim 10, characterized in that, The fluid supplied from the second supply unit is a fluid used to heat the space inside the container.

14. The substrate processing apparatus according to claim 10, characterized in that, The fluid supplied from the second supply unit is a fluid used to heat the untreated substrate that has not undergone heat treatment.

15. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus includes a temperature sensor that measures the temperature inside the container. The control unit can control the flow rate of the fluid according to the temperature measured by the temperature sensor.

16. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus includes a pressure sensor that measures the pressure inside the container. The control unit can control the flow rate of the fluid according to the pressure measured by the pressure sensor.

17. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes a display unit capable of displaying the operating state of the container. The display unit is capable of displaying the state of the fluid supplied into the container.

18. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes a heating unit that heats the fluid supplied from the storage unit to the container.

19. A method for manufacturing a semiconductor device, characterized in that, It has the following processes: The substrate is heated in the processing chamber; The processed substrate, which has been removed from the processing chamber, is placed in a container. The processed substrate placed in the container is cooled using fluid supplied from the supply unit; The fluid heated by cooling the processed substrate is stored in the storage section; as well as The fluid accumulated in the accumulation section is supplied to the untreated substrate stored in the container, thereby heating the untreated substrate.

20. A program, characterized in that, The following process is executed by the substrate processing device using a computer: The substrate is heated in the processing chamber; The processed substrate, which has been removed from the processing chamber, is placed in a container. The processed substrate placed in the container is cooled using fluid supplied from the supply unit; The fluid that is heated by the substrate after cooling is stored in the storage section; as well as The fluid accumulated in the accumulation section is supplied to the untreated substrate stored in the container, thereby heating the untreated substrate.

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