Fabrication method of 10nm cobalt nanowire electric transport device based on template / nanowire composite structure
By employing static deposition, intermittent spraying, and plasma treatment methods, the problem of uniform deposition and positioning of nanowires on the substrate was solved, enabling the reliable fabrication of 10nm-scale cobalt nanowire electrical transport devices and ensuring the stability of device performance and the reliability of measurements.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LANZHOU UNIV
- Filing Date
- 2026-03-04
- Publication Date
- 2026-06-02
AI Technical Summary
Existing technologies struggle to avoid nanowire damage and agglomeration during the transfer of 10nm-scale ultrafine cobalt nanowires, and also struggle to achieve uniform arrangement and positioning on the target substrate, thus affecting the performance of electrical transport devices.
A combination of static and intermittent spraying with plasma treatment was used. Static treatment allowed the nanowires to be suspended and dispersed in an alcohol reagent for an extended period of time, while intermittent spraying deposited them onto the substrate in the form of tiny droplets. The combination of silicon oxide substrate and argon plasma treatment enhanced surface wettability and ensured uniform coating of photoresist, thus fabricating Ti/Au four-electrode structures with single or small numbers of nanowires.
It effectively suppressed the aggregation of nanowires, achieved uniform deposition and positioning of nanowires on the substrate, ensured the performance of electrical transport devices, solved the problems of nanowire damage and aggregation in the prior art, and provided a reliable basis for measuring the electrical performance of nanowires.
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Figure CN122136093A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of nanomaterials and micro / nano device manufacturing technology, specifically relating to a method for fabricating a 10nm-scale cobalt nanowire electrical transport device based on a template / nanowire composite structure. Background Technology
[0002] Cobalt nanowires, as important low-dimensional magnetic nanomaterials, possess significant potential for application in next-generation spintronic devices and ultra-high-density interconnect technologies due to their low mean free path near the Fermi level, excellent ferromagnetism, and low diffusion coefficient. Among various preparation methods, the template method is considered an efficient and reliable synthesis route because it can produce nanowires with uniform diameter and controllable aspect ratio. When the nanowire diameter shrinks to the 10 nm scale, its electrical transport behavior will significantly differ from that of bulk materials. At this scale, quantum confinement effects, surface scattering, and grain boundary scattering will dominate the conduction mechanism, which is both a cutting-edge scientific issue in condensed matter physics and directly determines the performance upper limit of nanodevices. However, accurate electrical transport measurements of ultrafine cobalt nanowires at this scale still face significant challenges.
[0003] Existing technologies typically employ chemical dissolution or partial release / transfer methods to transfer micron-sized cobalt nanowires onto a substrate and fabricate them into electrical transport devices. Chemical dissolution involves dissolving the AAO template with chemical reagents such as NaOH solution or dissolving the polymer template with organic solvents, completely etching the template and releasing a large number of free nanowires. Subsequently, physical dispersion methods such as ultrasonic vibration, the addition of surfactants, or high-speed centrifugation are used to separate the aggregated nanowires before transferring them to the target substrate. Partial release / transfer methods do not completely dissolve the template; instead, they control the etching conditions so that one end of the nanowire is exposed and attached to the template substrate, while the other end remains free. Micro-nano manipulation techniques such as microprobe dipping, dry transfer, or external field guidance such as dielectrophoresis are then used to attempt to manipulate single or small numbers of nanowires and transfer them to the target substrate. However, these methods are prone to damaging the nanowires during the transfer of ultrafine cobalt nanowires on the 10 nm scale, and they are highly susceptible to agglomeration during dispersion, making it difficult to uniformly arrange and position them on the target substrate, thus affecting the performance of the fabricated electrical transport devices. Summary of the Invention
[0004] To address the aforementioned problems, this invention provides a method for fabricating a 10nm-scale cobalt nanowire electrical transport device based on a template / nanowire composite structure.
[0005] The first aspect of this invention provides a method for fabricating a 10nm nanowire electrical transport device, comprising the following steps: The template / nanowire composite structure is placed in a solvent to fully dissolve the template, thereby obtaining nanowires; Nanowires were dispersed in an alcohol reagent, and after standing, the supernatant was collected and sprayed intermittently onto a plasma-treated substrate at 3-second intervals of 20-60 seconds to obtain a substrate containing 10 nm nanowires. The plasma treatment conditions were 50-60 W, 2-4 min, and 30-50 sccm. During intermittent spraying, the solution existed on the substrate as discrete microdroplets. Each droplet evaporated independently, and its edges were typically pinned. Although evaporation also triggered capillary flow from the droplet center to the edge, this flow was relatively gentle and stable due to the small droplet size and independent evaporation process. It was insufficient to strongly push the nanowires to the edge, thus significantly suppressing the "coffee ring effect" and ultimately achieving uniform deposition of nanowires within the droplet coverage area. Specifically, the silicon oxide substrate was treated with oxygen plasma to enhance surface wettability and reduce nanowire aggregation caused by the coffee ring effect. During the fabrication of the micro / nano electrodes, argon plasma treatment was performed to improve surface wettability and ensure uniform coating of the subsequent photoresist.
[0006] A photoresist layer was spin-coated onto a substrate containing 10nm nanowires and then exposed to obtain a groove; a titanium adhesion layer and a gold conductive layer were then deposited on its surface to obtain the initial structure. The photoresist layer of the initial structure was peeled off to obtain a Ti / Au four-electrode structure with direct contact between cobalt nanowires, namely the 10nm-scale cobalt nanoelectric transport device.
[0007] In another preferred embodiment, the alcohol reagent is ethanol, and the standing time is 12h~24h.
[0008] In another preferred embodiment, the exposure is performed on the resist layer using electron beam lithography; The stripping process involves immersing the initial structure in an acetone solution under ultrasonic conditions to remove residual photoresist.
[0009] In another preferred embodiment, the specific process of spin-coating the photoresist layer is as follows: Electron beam photoresist is spin-coated onto the substrate surface with the following parameters: first stage 500-1000 r / min, 5-10 s; second stage 2500-3000 r / min, 60-90 s; acceleration 1000-1500 r / s; repeated four times to obtain a photoresist layer. The thickness of the photoresist layer is 1-2 times the total electrode thickness. To ensure the complete release of the electrode pattern in the subsequent lift-off process, the photoresist thickness must be greater than the total electrode metal thickness, which is typically 2-3 times the total electrode metal thickness of 70 nm. Four spin-coating cycles can increase the photoresist thickness to approximately 120 nm, meeting the lift-off requirements of this process. Further increasing the number of spin-coating cycles will cause the photoresist thickness to saturate due to solvent penetration and interlayer miscibility limitations, preventing significant increases and potentially affecting pattern fidelity due to stress accumulation.
[0010] In another preferred embodiment, the specific process for obtaining the nanowires is as follows: The template / nanowire composite structure was placed in dichloromethane and soaked to fully dissolve and remove the template, releasing the cobalt nanowires. The mixture was then centrifuged at 4000 r / min to 5000 r / min for 8 min to 12 min, and the precipitate was collected. After mixing the precipitate with dichloromethane, centrifuge and collect the precipitate. The precipitate was washed with ethanol and centrifuged, and the process was repeated more than 5 times to ensure complete removal of residual chemical reagents and template dissolution products, thus obtaining nanowires.
[0011] In another preferred embodiment, the template / nanowire refers to a template / nanowire composite structure containing ultrafine nanowires.
[0012] In another preferred embodiment, the parameters of the electron beam exposure are: After electron beam exposure, development and fixing are performed sequentially for 30 seconds to form grooves in the electrode area on the photoresist layer.
[0013] In another preferred embodiment, the thickness of the titanium adhesion layer is 8nm~10nm, and the thickness of the gold conductive layer is 50nm~60nm.
[0014] The second aspect of the present invention provides a 10 nm nanowire electrical transport device prepared by the preparation method described above.
[0015] Compared with the prior art, the present invention has the following beneficial effects: In this invention, after nanowires are dispersed in an alcohol reagent, the aggregates precipitate first under gravity during the static standing process. At this time, single or small amounts of nanowires, due to their extremely small mass, are continuously disturbed by the Brownian motion of solvent molecules and can remain stably suspended for a long time, thus accumulating in the supernatant to obtain a dispersion of single or a few nanowires. The dispersion is then applied to the substrate in the form of discrete microdroplets by intermittent spraying with 3-second intervals of 20-60-second intervals, preventing the nanowires from being strongly pushed to the edges and significantly suppressing the coffee ring effect. The silicon oxide substrate is then treated with oxygen plasma to enhance surface wettability and reduce nanowire aggregation caused by the coffee ring effect. After intermittent spraying, the substrate is further plasma-treated at 50-60W for 2-4 minutes at 30-50 sccm to improve surface wettability and ensure uniform coating of photoresist. This invention obtains single cobalt nanowires that meet the requirements for subsequent micro / nano electrode fabrication by employing various steps in the preparation process, including static setting, intermittent spraying, and plasma treatment. This effectively solves the problems of nanowire breakage and agglomeration in existing technologies. Attached Figure Description
[0016] Figure 1 This is a schematic diagram of the process flow for fabricating a 10 nm-scale ultrafine cobalt nanowire electrical transport device based on a template / nanowire composite structure according to the present invention.
[0017] Figure 2 Figure 1 shows the effect of standing on the dispersion of nanowires; Figure 2 shows the state of the nanowires before standing, where (i) represents the dispersion in ethanol; (ii) represents the optical microscope image after being sprayed onto the substrate; and (iii) represents the corresponding scanning electron microscope image. Figure 3 shows the state of the nanowires after standing, where (i) represents the dispersion in ethanol; (ii) represents the optical microscope image after being sprayed onto the substrate; and (iii) represents the corresponding scanning electron microscope image.
[0018] Figure 3 Figure 1 shows the effect of intermittent spraying on nanowire dispersion. Figure 2 shows the results of continuous spraying, where (i) represents the optical microscope image of the substrate and (ii) represents the scanning electron microscope image of the nanowire. Figure 3 shows the results of intermittent spraying, where (i) represents the optical microscope image of the substrate and (ii) represents the scanning electron microscope image of the nanowire.
[0019] Figure 4Figure 1 shows the effect of plasma treatment on nanowire dispersion. (a) is the image before treatment. In the image, (i) represents the atomic force microscope image of the substrate, with the inset showing its hydrophobic surface, (ii) represents the corresponding three-dimensional atomic force microscope image, and (iii) represents the scanning electron microscope image of the dispersed nanowires. (b) is the image after treatment. In the image, (i) represents the atomic force microscope image of the substrate, with the inset showing its hydrophilic surface, (ii) represents the corresponding three-dimensional atomic force microscope image, and (iii) represents the scanning electron microscope image of the dispersed nanowires.
[0020] Figure 5 SEM and TEM images of well-dispersed single nanowires; a is the SEM image, and b is the TEM image.
[0021] Figure 6 Figure 1 shows the effect of plasma treatment on spin-coated photoresist; a) shows the surface morphology of spin-coated photoresist without plasma treatment; b) shows the surface morphology of spin-coated photoresist after plasma treatment.
[0022] Figure 7 The first figure shows the effect of the number of spin-coating photoresist layers on the photoresist thickness and the photoresist removal effect; a~f are the photoresist thickness diagrams corresponding to 1 to 8 layers respectively; g is the residual condition of the substrate surface after photoresist removal when the photoresist thickness is insufficient; h is the statistical summary result of the photoresist thickness corresponding to different coating layers; i is the cleanliness effect of the substrate surface after photoresist removal when the photoresist thickness is sufficient.
[0023] Figure 8 The images show the SEM and TEM images of the final device structure; a is the SEM image, and b is the TEM image. Detailed Implementation
[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.
[0025] The template / nanowire composite structure of the ultrafine cobalt nanowires in the following examples was prepared using the method disclosed in CN119581414B.
[0026] Example 1: This example provides a method for fabricating a 10 nm-scale ultrafine cobalt nanowire electrical transport device based on a template / nanowire composite structure, such as... Figure 1 As shown, the specific steps include:
[0027] Step 1: Release and cleaning of nanowires.
[0028] A template / nanowire composite structure containing ultrafine cobalt nanowires was placed in a glass centrifuge tube containing dichloromethane and soaked for 2 hours to fully dissolve and remove the template material, releasing the cobalt nanowires. Subsequently, the tube was centrifuged at 4000 r / min for 8 min, and the precipitated nanowires were collected, with the supernatant removed. To further remove residual template, a suitable amount of pure dichloromethane was added for a second wash, followed by centrifugation and removal of the supernatant. Finally, anhydrous ethanol was used as the washing solvent to repeatedly centrifuge and wash the obtained nanowires until all residual chemical reagents and template dissolution products were completely removed.
[0029] Step 2: Dispersion and spraying of nanowires.
[0030] Cleaned cobalt nanowires were dispersed in anhydrous ethanol and mechanically agitated for 2 hours to form a uniform suspension. After standing for at least 12 hours, the supernatant, mainly containing well-dispersed single nanowires or a small number of nanowires, was collected for spraying. Before spraying, the silicon oxide (SiO2) / Si substrate was treated with oxygen plasma at 50 W for 3 minutes and 30 sccm to enhance surface wettability and reduce nanowire aggregation caused by the coffee ring effect. During spraying, the nozzle was held perpendicular to the substrate at a distance of 20 cm, and an intermittent operation was used, with each spray lasting 3 seconds and intervals of 20–60 seconds. This intermittent method prevented the suspension from forming a continuous liquid film on the substrate surface and merging into large droplets, effectively suppressing nanowire migration and aggregation towards the droplet edges caused by the coffee ring effect. Finally, by controlling the number of sprays and the suspension concentration, sparsely distributed nanowires were obtained on the substrate, laying the foundation for subsequent single nanowire positioning and device fabrication.
[0031] Step 3: Fabrication of micro / nano electrodes.
[0032] First, a scanning electron microscope (SEM) was used to scan the surface of a silicon oxide wafer coated with nanowires to screen out single cobalt nanowires that were morphologically intact, isolated, clean, and longer than 10 μm and 10 nm in diameter. Their precise coordinates were recorded using the SEM calibration system. Next, the substrate was treated with argon plasma at 50 W for 3 min, 30 sccm, and 0.2 mbar to improve surface wettability and ensure uniform photoresist coating. Then, A2 type 495K polymethyl methacrylate (PMMA) electron beam photoresist was spin-coated onto the substrate surface with the following parameters: first stage 1000 r / min for 10 s, second stage 2500 r / min for 60 s, with an acceleration of 1000 r / s. To facilitate the subsequent lift-off process, the PMMA thickness needed to be greater than the total electrode thickness by 70 nm, typically 2 to 3 times. In this embodiment, the PMMA thickness was 1.7 times the total electrode thickness. Four spin coatings can achieve a PMMA thickness of approximately 120 nm. Although this thickness is slightly lower than the ideal value, experiments have confirmed that it meets the lift-off requirements of this process. Further increasing the number of spin coatings will lead to PMMA thickness saturation with no significant increase; therefore, four spin coatings were chosen as the optimized process condition. Next, a four-electrode pattern was drawn based on the morphology of the selected nanowires, and electron beam evaporation was used to expose the nanowires at predetermined coordinates. After exposure, 30-second development and 30-second fixing were performed sequentially to form electrode pattern grooves on the PMMA layer. Then, a 10 nm thick titanium adhesion layer and a 60 nm thick gold conductive layer were sequentially deposited using electron beam evaporation. Finally, the sample was immersed in an 80°C acetone solution for 30 min, followed by ultrasonic treatment at 30 W for 5 s to remove residual PMMA photoresist, ultimately forming a Ti / Au four-electrode structure in direct contact with the cobalt nanowires, resulting in an electrical transport device.
[0033] The present invention conducted experiments on static placement, intermittent spraying, plasma treatment, and the number of spin-coating photoresist cycles, and the results are as follows.
[0034] Figure 2 This demonstrates the effect of settling on the dispersion state of nanowires: After prolonged mechanical agitation, a large number of loosely bound, large-sized nanowire aggregates formed by van der Waals forces and other forces may still exist in the solution. Due to their large mass, these aggregates will settle to the bottom of the container first due to gravity during settling. Meanwhile, well-dispersed individual nanowires or small quantities, due to their extremely small mass and continuous disturbance from the Brownian motion of solvent molecules, can remain stably suspended for a long time, thus accumulating in the supernatant. Therefore, Figure 1 The solution before standing is relatively turbid, and when sprayed onto the substrate, it appears as agglomerated nanowires; while after standing, the solution becomes clearer, and when the upper clear liquid is sprayed onto the substrate, it appears as a dispersed state of single or a few nanowires.
[0035] Figure 3 This study demonstrates the impact of continuous and intermittent spraying on the deposition morphology of nanowires. The core mechanism lies in the difference in the intensity and pattern of capillary flow between the two modes. In continuous spraying, a continuously supplied solution forms a continuous liquid film on the substrate. As the liquid film dries, its edges evaporate the fastest, strongly drawing solvent from the rear liquid film to replenish it, forming a strong outward capillary flow from the center to the edge. This flow carries a large number of nanowires towards the edge, where they accumulate, thus reinforcing the "coffee ring effect" and causing severe agglomeration at the nanowire edges. In intermittent spraying, the solution exists on the substrate in the form of discrete tiny droplets. Each droplet evaporates independently, and its edges are typically pinned. Although evaporation also triggers capillary flow from the droplet center to the edge, due to the small droplet size and independent evaporation process, this flow is relatively gentle and stable. It is insufficient to strongly push the nanowires to the edge, thus significantly suppressing the "coffee ring effect" and ultimately achieving uniform deposition of nanowires within the droplet-covered area. This comparison shows that by changing the spraying method from continuous to intermittent, the kinetics of solvent evaporation can be altered, thereby controlling the intensity and pattern of capillary flow. This is key to suppressing the agglomeration of nanowires due to strong outward flow and achieving uniform dispersion deposition.
[0036] Figure 4 This study demonstrates the mechanism and results of oxygen plasma treatment on the dispersion deposition of nanowires. Before spraying, the silica substrate was treated with oxygen plasma at 50 W for 3 min and 30 sccm. By cleaning the surface and introducing polar groups, the surface energy and wettability of the substrate were significantly improved; specifically, the ethanol contact angle changed from spherical to fully spread. Simultaneously, the surface roughness increased from Sa = 0.16 nm to Sa = 1.11 nm, further enhancing the hydrophilicity. This change in surface properties enabled the solution to form a uniform thin film on the substrate, reducing the pinning effect at the droplet edges and the resulting strong outward capillary flow, thus effectively suppressing the coffee ring effect. Finally, SEM results showed that the nanowires were severely agglomerated before treatment, while after treatment, the nanowires exhibited a uniform dispersion of single or a few strands, confirming the key role of plasma treatment in improving the uniformity of nanowire deposition by regulating interfacial properties.
[0037] Figure 5The SEM and TEM characterization results of a single cobalt nanowire that meets the requirements for subsequent micro / nano electrode fabrication are presented. As seen in the images, the nanowire exceeds 10 μm in length, has a straight shape without significant bending, and exhibits a relatively clean surface and surrounding environment. These morphological characteristics are crucial for subsequent micro / nano fabrication processes: the longer length (>10 μm) ensures the nanowire can span the pre-designed electrode gap; the straight shape helps maintain stable orientation during spin-coating of photoresist, avoiding positioning deviations caused by bending; and the relatively clean surface and surrounding environment are key prerequisites for ensuring the quality of the interface between the photoresist and the nanowire during electron beam exposure and achieving high-precision pattern transfer. Therefore, the morphological quality of this nanowire directly determines its usability in micro / nano electrode integration and the reliability of device performance.
[0038] Figure 6 This study demonstrates the mechanism and effect of argon plasma treatment on the uniformity of spin-coated photoresist on substrates. A substrate with deposited cobalt nanowires was treated with argon plasma at 50 W, 3 min, 30 sccm, and 0.2 mbar. The aim was to clean and activate the substrate surface through physical bombardment, improving its surface energy and wettability with the photoresist solution, while avoiding the use of oxidizing oxygen plasma to protect the cobalt nanowire surface from oxidation. Before treatment, the photoresist solution could not effectively spread and spin-spread due to the low surface energy and poor wettability of the substrate. After treatment, surface contaminants were removed and micro-roughening was introduced, significantly improving its hydrophilicity. This allowed the photoresist to be uniformly spin-coated to form a smooth, defect-free film, providing a uniform pattern transfer medium for subsequent electron beam lithography processes.
[0039] Figure 7 This study demonstrates the impact of the number of photoresist spin coats on the electrode structure and process integrity. To ensure the complete release of the electrode pattern during subsequent lift-off processes, the photoresist thickness must be greater than the total electrode metal thickness by 70 nm, typically recommended to be 2-3 times, and in this embodiment, 1.7 times. Four spin coats can increase the photoresist thickness to approximately 120 nm, slightly below the theoretical ideal value, but sufficient for the lift-off requirements of this process. Further increasing the number of spin coats leads to saturation of the PMMA thickness due to solvent penetration and interlayer miscibility limitations, preventing significant increases and potentially affecting pattern fidelity due to stress accumulation. Therefore, four spin coats were selected as the optimal condition balancing thickness requirements and process stability.
[0040] Figure 8SEM images of the final fabricated four-electrode nanowire device structure are shown. As shown in the figure, all four metal electrodes form clear and complete press-fit contacts with the single cobalt nanowire, indicating good electrode-nanowire interface contact, which is beneficial for achieving ohmic connections with low contact resistance. Simultaneously, the spacing between the electrodes is clear, with no metal residue or bridging short circuits, demonstrating that the electron beam exposure and metal stripping processes effectively controlled pattern accuracy and isolation. This structure verifies the successful integration of the entire process flow from nanowire release and cleaning, nanowire dispersion and spraying to micro / nano electrode fabrication, providing a reliable device foundation for subsequent accurate measurement of the nanowire's electrical properties.
[0041] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.
Claims
1. A method for fabricating a 10nm-scale cobalt nanowire electrical transport device based on a template / nanowire composite structure, characterized in that, Includes the following steps: The template / nanowire composite structure is placed in a solvent to fully dissolve the template, thereby obtaining nanowires; Nanowires were dispersed in an alcohol reagent, and after standing, the supernatant was taken and sprayed onto a plasma-treated substrate at intervals of 3 seconds and 20-60 seconds to obtain a substrate containing 10 nm nanowires. The plasma treatment conditions were 50 W to 60 W, 2 min to 4 min, and 30 sccm to 50 sccm. After spin-coating a photoresist layer onto a substrate containing 10nm nanowires, exposure is performed to obtain a groove. A titanium adhesion layer and a gold conductive layer are then deposited sequentially on the surface of the groove to obtain the initial structure. The photoresist layer of the initial structure was peeled off to obtain a Ti / Au four-electrode structure with direct contact between cobalt nanowires, namely the 10nm-scale cobalt nanoelectric transport device.
2. The preparation method according to claim 1, characterized in that, The alcohol reagent is ethanol, and the standing time is 12h~24h.
3. The preparation method according to claim 1, characterized in that, The exposure is performed on the resist layer using electron beam exposure. The stripping process involves immersing the initial structure in an acetone solution under ultrasonic conditions to remove residual photoresist.
4. The preparation method according to claim 1, characterized in that, The specific process of spin-coating the photoresist layer is as follows: Electron beam photoresist is spin-coated on the substrate surface. The spin-coating parameters are: first stage 500r / min~1000r / min, 5s~10s; second stage 2500r / min~3000r / min, 60s~90s; acceleration 1000r / s~1500r / s; this is repeated 4 times to obtain the photoresist layer; the thickness of the photoresist layer is 1 to 2 times the total thickness of the electrode.
5. The preparation method according to claim 1, characterized in that, The specific process for obtaining the nanowires is as follows: The template / nanowire composite structure was placed in dichloromethane and soaked to fully dissolve and remove the template, releasing the cobalt nanowires. The mixture was then centrifuged at 4000 r / min to 5000 r / min for 8 min to 12 min, and the precipitate was collected. The precipitate was mixed with dichloromethane and centrifuged, and the precipitate was collected. The precipitate was washed with ethanol and centrifuged, and the process was repeated more than 5 times to ensure complete removal of residual chemical reagents and template dissolution products, thus obtaining nanowires.
6. The preparation method according to claim 1, characterized in that, The template / nanowire refers to a template / nanowire composite structure containing ultrafine nanowires.
7. The preparation method according to claim 3, characterized in that, The parameters for the electron beam exposure are: After electron beam exposure, development and fixing are performed sequentially for 30 seconds to form grooves in the electrode area on the photoresist layer.
8. The preparation method according to claim 1, characterized in that, The thickness of the titanium adhesion layer is 8nm~10nm, and the thickness of the gold conductive layer is 50nm~60nm.