A cbt i / nio / pSCO layered composite resistance change thin film material and a preparation method and application thereof

Abstract

This invention discloses a CBTi / NiO / PSCO layered composite resistive switching thin film material, its preparation method, and its applications. The method includes: based on Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C 16 H 36 The first precursor solution is constructed using O4Ti; the second precursor solution is constructed using Ni(CH3COO)2·4H2O; and the third precursor solution is constructed using Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O. Sub-steps for preparing CBTi, NiO, and PSCO thin films are respectively set up; these three sub-steps are executed alternately to obtain a CBTi / NiO / PSCO layered composite resistive switching thin film material. The layered composite resistive switching thin film material prepared in this application exhibits multiple resistive states, high on / off ratio, high stability, and excellent repeatable bipolar resistive switching characteristics.

Description

Technical Field

[0001] This application relates to the field of resistive switching thin film technology, and in particular to a CBTi / NiO / PSCO layered composite resistive switching thin film material, its preparation method, and its application. Background Technology

[0002] Memristors, based on resistive switching characteristics, are considered one of the important ways to solve future data storage and processing problems. Research on resistive switching materials has been conducted for decades, and most resistive switching devices exhibiting excellent resistive switching performance often maintain a single resistive switching curve. This situation may limit their application range under certain conditions. To overcome this limitation, by applying control methods, the same material can exhibit multiple resistive switching curves and multiple resistive switching mechanisms without changing the material itself, thus adapting to more practical production needs.

[0003] CaBi4Ti4O 15 (CBTi) is a typical bismuth layered structure material with the general structural formula (Bi₂O₂). 2+ (A m-1 B m O 3m+1 ) 2- It is a superlattice structure. The fluorite-like layer (Bi₂O₂) is one of its components. 2+ It can effectively suppress leakage charge generation by providing charge compensation and insulation, thus bismuth-based layered perovskite-like materials have better fatigue resistance than simple perovskite materials. CBTi has been extensively studied in piezoelectric ceramics and energy storage due to its material properties, but research in its resistive switching field is rare.

[0004] However, existing technologies do not consider the application of CBTi materials in the field of resistive switching, and the on / off ratio, stability and repeatable bipolar resistive switching characteristics of resistive switching thin film materials need to be improved. Summary of the Invention

[0005] This application provides a CBTi / NiO / PSCO layered composite resistive switching thin film material, its preparation method, and its application, in order to solve the problems that the prior art has not considered the application of CBTi material in the field of resistive switching, and that the on / off ratio, stability, and repeatable bipolar resistive switching characteristics of the resistive switching thin film material need to be improved.

[0006] On the one hand, this application provides a method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material, comprising the following steps: Step 1: Take Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C in a molar ratio of 1:4:4. 16 H 36O4Ti, dissolve Ca(CH3COO)2·H2O in the first solvent, stir until homogeneous, add pH adjuster, and continue stirring to obtain the first solution; dissolve Bi(NO3)3·5H2O in the second solvent, stir until homogeneous, add pH adjuster dropwise, and continue stirring to obtain the second solution; mix the first and second solutions and continue stirring to obtain the third solution; C 16 H 36 O4Ti is dissolved in a third solvent and stirred to obtain a fourth solution. The third solution and the fourth solution are mixed, stirred, and then allowed to stand and age to obtain the first precursor solution.

[0007] Step 2: Dissolve Ni(CH3COO)2·4H2O in the fourth solvent, stir until homogeneous, add pH adjuster, continue stirring, add stabilizing coupling agent dropwise, heat in water bath and let stand to age, to obtain the second precursor solution.

[0008] Step 3: Dissolve Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 in the fifth solvent, stir until homogeneous, add coupling agent dropwise, continue stirring, add stabilizer dropwise, continue stirring, and let stand to age to obtain the third precursor solution.

[0009] Step four involves setting up sub-steps for preparing CBTi thin films, NiO thin films, and PSCO thin films, respectively.

[0010] The sub-steps for preparing CBTi thin films include: spin-coating, baking, and annealing the first precursor solution to obtain a crystalline CBTi thin film with the chemical formula CaBi4Ti4O. 15 .

[0011] The sub-steps for preparing NiO thin films include: spin-coating, baking, and annealing the second precursor solution to obtain a crystalline NiO thin film with the chemical formula NiO.

[0012] The sub-steps for preparing PSCO thin films include: spin-coating, baking, and annealing the third precursor solution to obtain an amorphous PSCO thin film with the chemical formula Pr. 0.5 Sr 0.5 CoO3.

[0013] Step 5: Based on the layer structure requirements of the CBTi / NiO / PSCO layered composite resistive switching thin film material, alternately perform the sub-steps for preparing CBTi thin film, NiO thin film, and PSCO thin film to obtain the CBTi / NiO / PSCO layered composite resistive switching thin film material.

[0014] In one possible implementation, in step one, Ca(CH3COO)2·H2O is dissolved in a first solvent, stirred until homogeneous, and then a pH adjuster is added. Stirring is continued for 1-2 hours to obtain a first solution. Bi(NO3)3·5H2O is dissolved in a second solvent, stirred until homogeneous, and then a pH adjuster is added dropwise. Stirring is continued for 1-2 hours to obtain a second solution. The first and second solutions are mixed and stirred for 1-2 hours to obtain a third solution. C... 16 H 36 O4Ti is dissolved in the third solvent and stirred for 2-3 hours to obtain the fourth solution. The third solution and the fourth solution are mixed and stirred for 5-6 hours, and then allowed to stand for aging for 12-24 hours to obtain the first precursor solution.

[0015] In step one, the first solvent is ethylene glycol, the pH adjuster is glacial acetic acid, the second solvent is ethylene glycol methyl ether, and the third solvent is acetylacetone.

[0016] In the first solution, the volume ratio of the first solvent to the pH adjuster is 5:1; in the second solution, the volume ratio of the second solvent to the pH adjuster is 10:1; in the fourth solution, the volume ratio of the third solvent to C... 16 H 36 The volume ratio of O4Ti is 1:1.

[0017] In one possible implementation, in step two, Ni(CH3COO)2·4H2O is dissolved in a fourth solvent, stirred evenly, and then a pH adjuster is added. After stirring for 1-2 hours, a stabilizing coupling agent is added dropwise. The mixture is then heated in a water bath at 60°C for 2 hours and allowed to stand for 12-24 hours to obtain the second precursor solution.

[0018] The fourth solvent in step two is ethylene glycol methyl ether, the pH adjuster is acetic anhydride, and the stabilizing coupling agent is ethanolamine.

[0019] In the second precursor solution, the volume ratio of the fourth solvent, pH adjuster, and stabilizing coupling agent is 8:1:1.

[0020] In one possible implementation, in step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 are dissolved in a fifth solvent, stirred until homogeneous, and then a coupling agent is added dropwise. After stirring for 1-2 hours, a stabilizer is added dropwise, and after stirring for 0.5-1 hour, the mixture is allowed to stand and age for 12-24 hours to obtain the third precursor solution.

[0021] In step three, the fifth solvent is ethylene glycol methyl ether, the coupling agent is acetic anhydride, and the stabilizer is ethylene glycol.

[0022] In the third precursor solution, the volume ratio of the fifth solvent, coupling agent, and stabilizer is 5:1:1.

[0023] In one possible implementation, the concentration of metal ions in the first precursor solution is 0.085~0.09 mol / L.

[0024] The concentration of metal ions in the second precursor solution is 0.45~0.5 mol / L.

[0025] The concentration of metal ions in the third precursor solution is 0.1~0.3 mol / L.

[0026] In one possible implementation, in the sub-step of preparing the CBTi thin film, the first precursor liquid is spin-coated and then baked at 140~180℃ for 10~20 min to obtain its dry film, and then annealed at 500~520℃ for 10~30 min to obtain a crystalline CBTi thin film.

[0027] In the sub-step of preparing NiO thin film, the second precursor liquid is spin-coated and then baked at 170~200℃ for 15~20 min to obtain its dry film. It is then annealed at 500~520℃ for 10~20 min to obtain crystalline NiO thin film.

[0028] In the sub-step of preparing PSCO thin film, the third precursor liquid is spin-coated and then baked at 140~180℃ for 10~20 min to obtain its dry film. It is then annealed at 500~520℃ for 10~30 min to obtain an amorphous PSCO thin film.

[0029] In one possible implementation, in step five, the layer structure requirement of the CBTi / NiO / PSCO layered composite resistive switching thin film material includes three layer structures: PSCO / NiO / CBTi / FTO, NiO / PSCO / CBTi / FTO, and NiO / CBTi / PSCO / FTO, where CBTi represents CBTi thin film, NiO represents NiO thin film, PSCO represents PSCO thin film, and FTO represents substrate.

[0030] In one possible implementation, in step five, a CBTi film of the desired thickness is obtained by repeating the sub-step of preparing a CBTi film; a NiO film of the desired thickness is obtained by repeating the sub-step of preparing a NiO film; and a PSCO film of the desired thickness is obtained by repeating the sub-step of preparing a PSCO film.

[0031] On one hand, this application provides a CBTi / NiO / PSCO layered composite resistive switching thin film material, which is prepared using the above-mentioned method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material, including layered composite CaBi4Ti4O 15 Thin film, NiO thin film, Pr 0.5 Sr0.5 CoO3 thin film.

[0032] On the one hand, this application provides the application of the above-mentioned CBTi / NiO / PSCO layered composite resistive switching thin film material in resistive switching memory and neural synapse devices.

[0033] The CBTi / NiO / PSCO layered composite resistive switching thin film material, its preparation method, and its application disclosed in this application have the following advantages: By designing a fabrication method, a layered composite resistive switching thin film material of CBTi / NiO / PSCO was prepared, exhibiting multiple resistive states, high on / off ratio, high stability, and excellent reproducible bipolar resistive switching characteristics. Specifically, crystalline CaBi4Ti4O 15 The superposition of the thin film with the crystalline NiO thin film forms a near-superlattice structure, which is beneficial for improving the resistive switching ratio of the NiO / CBTi composite thin film, while also enhancing its cycle characteristics and fatigue resistance, and reducing device power consumption. This is followed by the addition of semi-doped Pr... 0.5 Sr 0.5 CoO3 thin film composites, utilizing metal removal properties and oxygen-vacancy ordered structures, yielded multiple resistance states (5 resistance state values), further improving the bipolar resistive switching ratio (10). 3 ), resistance variable cycle stability (cycle 10) 2 (no significant degradation in secondary performance) and time stability (10) 3 (No significant performance degradation). The Pavlovian dog experiment, applicable to synaptic stimulation transmission, was successfully simulated in memristor devices based on CBTi / NiO / PSCO layered composite resistive switching thin film materials, demonstrating high practical value and economic benefits.

[0034] The CBTi / NiO / PSCO layered composite resistive switching film material of this application is prepared by chemical solution deposition. The preparation method is simple, the preparation temperature is low, the reaction is easy to carry out, the prepared film has good uniformity, excellent and stable performance, and is easy to realize industrial production. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a schematic flowchart illustrating a method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material, as provided in an embodiment of this application. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0038] like Figure 1 As shown in the figure, this application provides a method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material, including the following steps: Step 1: Take Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C in a molar ratio of 1:4:4. 16 H 36 O4Ti, dissolve Ca(CH3COO)2·H2O in the first solvent, stir until homogeneous, add pH adjuster, and continue stirring to obtain the first solution; dissolve Bi(NO3)3·5H2O in the second solvent, stir until homogeneous, add pH adjuster dropwise, and continue stirring to obtain the second solution; mix the first and second solutions and continue stirring to obtain the third solution; C 16 H 36 O4Ti is dissolved in a third solvent and stirred to obtain a fourth solution. The third solution and the fourth solution are mixed, stirred, and then allowed to stand and age to obtain the first precursor solution.

[0039] Step 2: Dissolve Ni(CH3COO)2·4H2O in the fourth solvent, stir until homogeneous, add pH adjuster, continue stirring, add stabilizing coupling agent dropwise, heat in water bath and let stand to age, to obtain the second precursor solution.

[0040] Step 3: Dissolve Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 in the fifth solvent, stir until homogeneous, add coupling agent dropwise, continue stirring, add stabilizer dropwise, continue stirring, and let stand to age to obtain the third precursor solution.

[0041] Step four involves setting up sub-steps for preparing CBTi thin films, NiO thin films, and PSCO thin films, respectively.

[0042] The sub-steps for preparing CBTi thin films include: spin-coating, baking, and annealing the first precursor solution to obtain a crystalline CBTi thin film with the chemical formula CaBi4Ti4O. 15 .

[0043] The sub-steps for preparing NiO thin films include: spin-coating, baking, and annealing the second precursor solution to obtain a crystalline NiO thin film with the chemical formula NiO.

[0044] The sub-steps for preparing PSCO thin films include: spin-coating, baking, and annealing the third precursor solution to obtain an amorphous PSCO thin film with the chemical formula Pr. 0.5 Sr 0.5 CoO3.

[0045] Step 5: Based on the layer structure requirements of the CBTi / NiO / PSCO layered composite resistive switching thin film material, alternately perform the sub-steps for preparing CBTi thin film, NiO thin film, and PSCO thin film to obtain the CBTi / NiO / PSCO layered composite resistive switching thin film material.

[0046] For example, in step one, Ca(CH3COO)2·H2O is dissolved in a first solvent, stirred until homogeneous, and then a pH adjuster is added. Stirring is continued for 1-2 hours to obtain a first solution. Bi(NO3)3·5H2O is dissolved in a second solvent, stirred until homogeneous, and then a pH adjuster is added dropwise. Stirring is continued for 1-2 hours to obtain a second solution. The first and second solutions are mixed and stirred for 1-2 hours to obtain a third solution. C... 16 H 36 O4Ti is dissolved in the third solvent and stirred for 2-3 hours to obtain the fourth solution. The third solution and the fourth solution are mixed and stirred for 5-6 hours, and then allowed to stand for aging for 12-24 hours to obtain the first precursor solution.

[0047] In step one, the first solvent is ethylene glycol, the pH adjuster is glacial acetic acid, the second solvent is ethylene glycol methyl ether, and the third solvent is acetylacetone.

[0048] In the first solution, the volume ratio of the first solvent to the pH adjuster is 5:1; in the second solution, the volume ratio of the second solvent to the pH adjuster is 10:1; in the fourth solution, the volume ratio of the third solvent to C... 16 H 36 The volume ratio of O4Ti is 1:1.

[0049] For example, in step two, Ni(CH3COO)2·4H2O is dissolved in the fourth solvent, stirred evenly, and then a pH adjuster is added. After stirring for 1-2 hours, a stabilizing coupling agent is added dropwise. The mixture is then heated in a water bath at 60°C for 2 hours and allowed to stand for 12-24 hours to obtain the second precursor solution.

[0050] The fourth solvent in step two is ethylene glycol methyl ether, the pH adjuster is acetic anhydride, and the stabilizing coupling agent is ethanolamine.

[0051] In the second precursor solution, the volume ratio of the fourth solvent, pH adjuster, and stabilizing coupling agent is 8:1:1.

[0052] For example, in step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 are dissolved in the fifth solvent, stirred evenly, and then a coupling agent is added dropwise. After stirring for 1 to 2 hours, a stabilizer is added dropwise, and after stirring for 0.5 to 1 hour, the mixture is allowed to stand and age for 12 to 24 hours to obtain the third precursor solution.

[0053] In step three, the fifth solvent is ethylene glycol methyl ether, the coupling agent is acetic anhydride, and the stabilizer is ethylene glycol.

[0054] In the third precursor solution, the volume ratio of the fifth solvent, coupling agent, and stabilizer is 5:1:1.

[0055] For example, the concentration of metal ions in the first precursor solution is 0.085~0.09 mol / L.

[0056] The concentration of metal ions in the second precursor solution is 0.45~0.5 mol / L.

[0057] The concentration of metal ions in the third precursor solution is 0.1~0.3 mol / L.

[0058] For example, in the sub-step of preparing CBTi thin film, the first precursor liquid is spin-coated and then baked at 140~180℃ for 10~20 min to obtain its dry film, and then annealed at 500~520℃ for 10~30 min to obtain crystalline CBTi thin film.

[0059] In the sub-step of preparing NiO thin film, the second precursor liquid is spin-coated and then baked at 170~200℃ for 15~20 min to obtain its dry film. It is then annealed at 500~520℃ for 10~20 min to obtain crystalline NiO thin film.

[0060] In the sub-step of preparing PSCO thin film, the third precursor liquid is spin-coated and then baked at 140~180℃ for 10~20 min to obtain its dry film. It is then annealed at 500~520℃ for 10~30 min to obtain an amorphous PSCO thin film.

[0061] For example, in step five, the layer structure requirements of the CBTi / NiO / PSCO layered composite resistive switching thin film material include three layer structures: PSCO / NiO / CBTi / FTO, NiO / PSCO / CBTi / FTO, and NiO / CBTi / PSCO / FTO, where CBTi represents CBTi thin film, NiO represents NiO thin film, PSCO represents PSCO thin film, and FTO represents substrate.

[0062] For example, in step five, a CBTi film of the desired thickness is obtained by repeating the sub-step of preparing a CBTi film; a NiO film of the desired thickness is obtained by repeating the sub-step of preparing a NiO film; and a PSCO film of the desired thickness is obtained by repeating the sub-step of preparing a PSCO film.

[0063] This application provides a CBTi / NiO / PSCO layered composite resistive switching thin film material, prepared using the aforementioned method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material, comprising layered composite CaBi4Ti4O 15 Thin film, NiO thin film, Pr 0.5 Sr 0.5 CoO3 thin film.

[0064] This application provides the application of the above-mentioned CBTi / NiO / PSCO layered composite resistive switching thin film material in resistive switching memory and neural synapse devices.

[0065] Example 1: In step one, Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C are taken in a molar ratio of 1:4:4. 16 H 36 O4Ti, dissolve Ca(CH3COO)2·H2O in ethylene glycol, stir well, then add glacial acetic acid and continue stirring for 1 hour to obtain the first solution (the volume ratio of ethylene glycol to glacial acetic acid in the first solution is 5:1); dissolve Bi(NO3)3·5H2O in ethylene glycol methyl ether, stir well, then add glacial acetic acid dropwise and continue stirring for 1 hour to obtain the second solution (the volume ratio of ethylene glycol methyl ether to glacial acetic acid in the second solution is 10:1); mix the first and second solutions and continue stirring for 1 hour to obtain the third solution; C 16 H 36 O4Ti was dissolved in acetylacetone and stirred for 2 hours to obtain a fourth solution (in the fourth solution, acetylacetone and C...). 16 H 36 The volume ratio of O4Ti was 1:1. The third solution was mixed with the fourth solution, stirred for 5 hours, and then allowed to stand for 12 hours to obtain the first precursor solution. The metal ion concentration in the first precursor solution was 0.085 mol / L.

[0066] In step two, Ni(CH3COO)2·4H2O was dissolved in ethylene glycol methyl ether, stirred until homogeneous, and then acetic anhydride was added. After stirring for 1 hour, ethanolamine was added dropwise. The mixture was heated in a water bath at 60°C for 2 hours and then allowed to stand for aging for 12 hours to obtain the second precursor solution. The volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethanolamine in the second precursor solution was 8:1:1. The metal ion concentration in the second precursor solution was 0.45 mol / L.

[0067] In step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 were dissolved in ethylene glycol methyl ether. After stirring until homogeneous, acetic anhydride was added dropwise, and stirring was continued for 1 hour. Then, ethylene glycol was added dropwise, and stirring was continued for 0.5 hours. The mixture was then allowed to stand for 12 hours to obtain the third precursor solution. In the third precursor solution, the volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethylene glycol was 5:1:1. The concentration of metal ions in the third precursor solution was 0.1 mol / L.

[0068] In step four, the sub-steps for preparing CBTi films are as follows: the first precursor solution is spin-coated, baked at 140°C for 10 min to obtain a dry film, and then annealed at 500°C for 10 min to obtain a crystalline CBTi film; the sub-steps for preparing NiO films are as follows: the second precursor solution is spin-coated, baked at 170°C for 15 min to obtain a dry film, and then annealed at 500°C for 10 min to obtain a crystalline NiO film; the sub-steps for preparing PSCO films are as follows: the third precursor solution is spin-coated, baked at 140°C for 10 min to obtain a dry film, and then annealed at 500°C for 10 min to obtain an amorphous PSCO film.

[0069] In step five, a sub-step for preparing a CBTi thin film is performed once on the FTO substrate to prepare a CBTi thin film with a thickness of 50 nm; a sub-step for preparing a NiO thin film is performed once on the CBTi thin film to prepare a NiO thin film with a thickness of 155 nm; and a sub-step for preparing a PSCO thin film is performed once on the NiO thin film to prepare a PSCO thin film with a thickness of 30 nm. A memristor device with a layer structure of PSCO / NiO / CBTi / FTO (FTO as the substrate) is obtained.

[0070] The memristor device obtained in Example 1 has 5 resistance states, a maximum resistance-to-on ratio of 1100, no significant performance degradation after 50 stable cycles, and a high-low resistance switching stability of 10. 3 s showed no significant attenuation.

[0071] Example 2: In step one, Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C are taken in a molar ratio of 1:4:4. 16 H 36O4Ti, dissolve Ca(CH3COO)2·H2O in ethylene glycol, stir well, then add glacial acetic acid and continue stirring for 2 hours to obtain the first solution (the volume ratio of ethylene glycol to glacial acetic acid in the first solution is 5:1); dissolve Bi(NO3)3·5H2O in ethylene glycol methyl ether, stir well, then add glacial acetic acid dropwise and continue stirring for 2 hours to obtain the second solution (the volume ratio of ethylene glycol methyl ether to glacial acetic acid in the second solution is 10:1); mix the first and second solutions and continue stirring for 2 hours to obtain the third solution; C 16 H 36 O4Ti was dissolved in acetylacetone and stirred for 3 hours to obtain a fourth solution (in the fourth solution, acetylacetone and C...). 16 H 36 The volume ratio of O4Ti was 1:1. The third solution was mixed with the fourth solution, stirred for 6 hours, and then allowed to stand for 24 hours to obtain the first precursor solution. The metal ion concentration in the first precursor solution was 0.09 mol / L.

[0072] In step two, Ni(CH3COO)2·4H2O was dissolved in ethylene glycol methyl ether, stirred until homogeneous, and then acetic anhydride was added. After stirring for 2 hours, ethanolamine was added dropwise. The mixture was heated in a water bath at 60°C for 2 hours and then allowed to stand for aging for 24 hours to obtain the second precursor solution. The volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethanolamine in the second precursor solution was 8:1:1. The metal ion concentration in the second precursor solution was 0.5 mol / L.

[0073] In step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 were dissolved in ethylene glycol methyl ether. After stirring until homogeneous, acetic anhydride was added dropwise, and stirring was continued for 2 hours. Then, ethylene glycol was added dropwise, and stirring was continued for 1 hour. The mixture was then allowed to stand for 24 hours to obtain the third precursor solution. In the third precursor solution, the volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethylene glycol was 5:1:1. The concentration of metal ions in the third precursor solution was 0.3 mol / L.

[0074] In step four, the sub-steps for preparing CBTi films are as follows: the first precursor solution is spin-coated, baked at 180°C for 20 min to obtain a dry film, and then annealed at 520°C for 30 min to obtain a crystalline CBTi film; the sub-steps for preparing NiO films are as follows: the second precursor solution is spin-coated, baked at 200°C for 20 min to obtain a dry film, and then annealed at 520°C for 20 min to obtain a crystalline NiO film; the sub-steps for preparing PSCO films are as follows: the third precursor solution is spin-coated, baked at 180°C for 20 min to obtain a dry film, and then annealed at 520°C for 30 min to obtain an amorphous PSCO film.

[0075] In step five, two sub-steps for preparing CBTi films are performed on the FTO substrate to prepare two CBTi films (each 50 nm thick); two sub-steps for preparing NiO films are performed on the CBTi films to prepare two NiO films (each 155 nm thick); and two sub-steps for preparing PSCO films are performed on the NiO films to prepare two PSCO films (each 30 nm thick). This results in a memristor device with a layer structure of PSCO / NiO / CBTi / FTO (FTO as the substrate).

[0076] The memristor device obtained in Example 2 has 5 resistance states, a maximum resistance-to-on ratio of 2000, no significant performance degradation after 80 stable cycles, and a high-low resistance switching stability of 10. 3 s showed no significant attenuation.

[0077] Example 3: In step one, Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C are taken in a molar ratio of 1:4:4. 16 H 36 O4Ti, dissolve Ca(CH3COO)2·H2O in ethylene glycol, stir well, then add glacial acetic acid and continue stirring for 1.5 h to obtain the first solution (the volume ratio of ethylene glycol to glacial acetic acid in the first solution is 5:1); dissolve Bi(NO3)3·5H2O in ethylene glycol methyl ether, stir well, then add glacial acetic acid dropwise and continue stirring for 1.5 h to obtain the second solution (the volume ratio of ethylene glycol methyl ether to glacial acetic acid in the second solution is 10:1); mix the first and second solutions and continue stirring for 1.5 h to obtain the third solution; C 16 H 36 O4Ti was dissolved in acetylacetone and stirred for 2.5 h to obtain a fourth solution (in the fourth solution, acetylacetone and C... 16 H 36 The volume ratio of O4Ti was 1:1. The third solution was mixed with the fourth solution, stirred for 5.5 h, and then allowed to stand for aging for 18 h to obtain the first precursor solution. The metal ion concentration in the first precursor solution was 0.087 mol / L.

[0078] In step two, Ni(CH3COO)2·4H2O was dissolved in ethylene glycol methyl ether, stirred until homogeneous, and then acetic anhydride was added. After stirring for 1.5 h, ethanolamine was added dropwise. The mixture was heated in a water bath at 60 °C for 2 h and then allowed to stand for aging for 18 h to obtain the second precursor solution. The volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethanolamine in the second precursor solution was 8:1:1. The metal ion concentration in the second precursor solution was 0.47 mol / L.

[0079] In step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 were dissolved in ethylene glycol methyl ether. After stirring until homogeneous, acetic anhydride was added dropwise, and stirring was continued for 1.5 h. Then, ethylene glycol was added dropwise, and stirring was continued for 0.7 h. The mixture was then allowed to stand for 18 h to obtain the third precursor solution. In the third precursor solution, the volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethylene glycol was 5:1:1. The concentration of metal ions in the third precursor solution was 0.2 mol / L.

[0080] In step four, the sub-steps for preparing CBTi films are as follows: the first precursor solution is spin-coated, baked at 160°C for 15 min to obtain a dry film, and then annealed at 510°C for 20 min to obtain a crystalline CBTi film; the sub-steps for preparing NiO films are as follows: the second precursor solution is spin-coated, baked at 185°C for 17 min to obtain a dry film, and then annealed at 510°C for 15 min to obtain a crystalline NiO film; the sub-steps for preparing PSCO films are as follows: the third precursor solution is spin-coated, baked at 160°C for 15 min to obtain a dry film, and then annealed at 510°C for 20 min to obtain an amorphous PSCO film.

[0081] In step five, a sub-step for preparing a CBTi thin film is performed once on the FTO substrate to prepare a CBTi thin film with a thickness of 50 nm; a sub-step for preparing a NiO thin film is performed once on the CBTi thin film to prepare a NiO thin film with a thickness of 155 nm; and a sub-step for preparing a PSCO thin film is performed four times on the NiO thin film to prepare four PSCO thin films (each with a thickness of 30 nm). This results in a memristor device with a layer structure of PSCO / NiO / CBTi / FTO (FTO as the substrate).

[0082] The memristor device obtained in Example 3 has 5 resistance states, a maximum resistance-to-on ratio of 6200, no significant performance degradation after 200 stable cycles, and a high-low resistance switching stability of 10. 3 s showed no significant attenuation.

[0083] Example 4: In step one, Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C are taken in a molar ratio of 1:4:4. 16 H 36O4Ti, dissolve Ca(CH3COO)2·H2O in ethylene glycol, stir well, then add glacial acetic acid and continue stirring for 1 hour to obtain the first solution (the volume ratio of ethylene glycol to glacial acetic acid in the first solution is 5:1); dissolve Bi(NO3)3·5H2O in ethylene glycol methyl ether, stir well, then add glacial acetic acid dropwise and continue stirring for 1 hour to obtain the second solution (the volume ratio of ethylene glycol methyl ether to glacial acetic acid in the second solution is 10:1); mix the first and second solutions and continue stirring for 1 hour to obtain the third solution; C 16 H 36 O4Ti was dissolved in acetylacetone and stirred for 2 hours to obtain a fourth solution (in the fourth solution, acetylacetone and C...). 16 H 36 The volume ratio of O4Ti was 1:1. The third solution was mixed with the fourth solution, stirred for 5 hours, and then allowed to stand for 12 hours to obtain the first precursor solution. The metal ion concentration in the first precursor solution was 0.085 mol / L.

[0084] In step two, Ni(CH3COO)2·4H2O was dissolved in ethylene glycol methyl ether, stirred until homogeneous, and then acetic anhydride was added. After stirring for 1 hour, ethanolamine was added dropwise. The mixture was heated in a water bath at 60°C for 2 hours and then allowed to stand for aging for 12 hours to obtain the second precursor solution. The volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethanolamine in the second precursor solution was 8:1:1. The metal ion concentration in the second precursor solution was 0.45 mol / L.

[0085] In step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 were dissolved in ethylene glycol methyl ether. After stirring until homogeneous, acetic anhydride was added dropwise, and stirring was continued for 1 hour. Then, ethylene glycol was added dropwise, and stirring was continued for 0.5 hours. The mixture was then allowed to stand for 12 hours to obtain the third precursor solution. In the third precursor solution, the volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethylene glycol was 5:1:1. The concentration of metal ions in the third precursor solution was 0.1 mol / L.

[0086] In step four, the sub-steps for preparing CBTi films are as follows: the first precursor solution is spin-coated, baked at 140°C for 10 min to obtain a dry film, and then annealed at 500°C for 10 min to obtain a crystalline CBTi film; the sub-steps for preparing NiO films are as follows: the second precursor solution is spin-coated, baked at 170°C for 15 min to obtain a dry film, and then annealed at 500°C for 10 min to obtain a crystalline NiO film; the sub-steps for preparing PSCO films are as follows: the third precursor solution is spin-coated, baked at 140°C for 10 min to obtain a dry film, and then annealed at 500°C for 10 min to obtain an amorphous PSCO film.

[0087] In step five, a sub-step for preparing a CBTi thin film is performed once on the FTO substrate to prepare a CBTi thin film with a thickness of 50 nm; a sub-step for preparing a PSCO thin film is performed once on the CBTi thin film to prepare a PSCO thin film with a thickness of 30 nm; and a sub-step for preparing a NiO thin film is performed once on the PSCO thin film to prepare a NiO thin film with a thickness of 155 nm. A memristor device with a layer structure of NiO / PSCO / CBTi / FTO (FTO as the substrate) is obtained.

[0088] The memristor device obtained in Example 4 has 5 resistance states, a maximum resistance-to-on ratio of 3100, and no significant performance degradation after 100 stable cycles. Its high-low resistance switching stability is 10. 3 s showed no significant attenuation.

[0089] Example 5: In step one, Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C are taken in a molar ratio of 1:4:4. 16 H 36 O4Ti, dissolve Ca(CH3COO)2·H2O in ethylene glycol, stir well, then add glacial acetic acid and continue stirring for 2 hours to obtain the first solution (the volume ratio of ethylene glycol to glacial acetic acid in the first solution is 5:1); dissolve Bi(NO3)3·5H2O in ethylene glycol methyl ether, stir well, then add glacial acetic acid dropwise and continue stirring for 2 hours to obtain the second solution (the volume ratio of ethylene glycol methyl ether to glacial acetic acid in the second solution is 10:1); mix the first and second solutions and continue stirring for 2 hours to obtain the third solution; C 16 H 36 O4Ti was dissolved in acetylacetone and stirred for 3 hours to obtain a fourth solution (in the fourth solution, acetylacetone and C...). 16 H 36 The volume ratio of O4Ti was 1:1. The third solution was mixed with the fourth solution, stirred for 6 hours, and then allowed to stand for 24 hours to obtain the first precursor solution. The metal ion concentration in the first precursor solution was 0.09 mol / L.

[0090] In step two, Ni(CH3COO)2·4H2O was dissolved in ethylene glycol methyl ether, stirred until homogeneous, and then acetic anhydride was added. After stirring for 2 hours, ethanolamine was added dropwise. The mixture was heated in a water bath at 60°C for 2 hours and then allowed to stand for aging for 24 hours to obtain the second precursor solution. The volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethanolamine in the second precursor solution was 8:1:1. The metal ion concentration in the second precursor solution was 0.5 mol / L.

[0091] In step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 were dissolved in ethylene glycol methyl ether. After stirring until homogeneous, acetic anhydride was added dropwise, and stirring was continued for 2 hours. Then, ethylene glycol was added dropwise, and stirring was continued for 1 hour. The mixture was then allowed to stand for 24 hours to obtain the third precursor solution. In the third precursor solution, the volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethylene glycol was 5:1:1. The concentration of metal ions in the third precursor solution was 0.3 mol / L.

[0092] In step four, the sub-steps for preparing CBTi films are as follows: the first precursor solution is spin-coated, baked at 180°C for 20 min to obtain a dry film, and then annealed at 520°C for 30 min to obtain a crystalline CBTi film; the sub-steps for preparing NiO films are as follows: the second precursor solution is spin-coated, baked at 200°C for 20 min to obtain a dry film, and then annealed at 520°C for 20 min to obtain a crystalline NiO film; the sub-steps for preparing PSCO films are as follows: the third precursor solution is spin-coated, baked at 180°C for 20 min to obtain a dry film, and then annealed at 520°C for 30 min to obtain an amorphous PSCO film.

[0093] In step five, a sub-step for preparing a PSCO thin film is performed once on the FTO substrate to prepare a PSCO thin film with a thickness of 30 nm; a sub-step for preparing a CBTi thin film is performed once on the PSCO thin film to prepare a CBTi thin film with a thickness of 50 nm; and a sub-step for preparing a NiO thin film is performed once on the CBTi thin film to prepare a NiO thin film with a thickness of 155 nm. A memristor device with a layer structure of NiO / CBTi / PSCO / FTO (FTO as the substrate) is obtained.

[0094] The memristor device obtained in Example 5 has 5 resistance states, a maximum resistance-to-on ratio of 5800, no significant performance degradation after 200 stable cycles, and a high-low resistance switching stability of 10. 3 s showed no significant attenuation.

[0095] Example 6: In step one, Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C are taken in a molar ratio of 1:4:4. 16 H 36O4Ti, dissolve Ca(CH3COO)2·H2O in ethylene glycol, stir well, then add glacial acetic acid and continue stirring for 1.5 h to obtain the first solution (the volume ratio of ethylene glycol to glacial acetic acid in the first solution is 5:1); dissolve Bi(NO3)3·5H2O in ethylene glycol methyl ether, stir well, then add glacial acetic acid dropwise and continue stirring for 1.5 h to obtain the second solution (the volume ratio of ethylene glycol methyl ether to glacial acetic acid in the second solution is 10:1); mix the first and second solutions and continue stirring for 1.5 h to obtain the third solution; C 16 H 36 O4Ti was dissolved in acetylacetone and stirred for 2.5 h to obtain a fourth solution (in the fourth solution, acetylacetone and C... 16 H 36 The volume ratio of O4Ti was 1:1. The third solution was mixed with the fourth solution, stirred for 5.5 h, and then allowed to stand for aging for 18 h to obtain the first precursor solution. The metal ion concentration in the first precursor solution was 0.087 mol / L.

[0096] In step two, Ni(CH3COO)2·4H2O was dissolved in ethylene glycol methyl ether, stirred until homogeneous, and then acetic anhydride was added. After stirring for 1.5 h, ethanolamine was added dropwise. The mixture was heated in a water bath at 60 °C for 2 h and then allowed to stand for aging for 18 h to obtain the second precursor solution. The volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethanolamine in the second precursor solution was 8:1:1. The metal ion concentration in the second precursor solution was 0.47 mol / L.

[0097] In step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 were dissolved in ethylene glycol methyl ether. After stirring until homogeneous, acetic anhydride was added dropwise, and stirring was continued for 1.5 h. Then, ethylene glycol was added dropwise, and stirring was continued for 0.7 h. The mixture was then allowed to stand for 18 h to obtain the third precursor solution. In the third precursor solution, the volume ratio of ethylene glycol methyl ether, acetic anhydride, and ethylene glycol was 5:1:1. The concentration of metal ions in the third precursor solution was 0.2 mol / L.

[0098] In step four, the sub-steps for preparing CBTi films are as follows: the first precursor solution is spin-coated, baked at 160°C for 15 min to obtain a dry film, and then annealed at 510°C for 20 min to obtain a crystalline CBTi film; the sub-steps for preparing NiO films are as follows: the second precursor solution is spin-coated, baked at 185°C for 17 min to obtain a dry film, and then annealed at 510°C for 15 min to obtain a crystalline NiO film; the sub-steps for preparing PSCO films are as follows: the third precursor solution is spin-coated, baked at 160°C for 15 min to obtain a dry film, and then annealed at 510°C for 20 min to obtain an amorphous PSCO film.

[0099] In step five, five sub-steps for preparing CBTi films are performed on the FTO substrate to prepare five CBTi films (each 50 nm thick); one sub-step for preparing NiO films is performed on the CBTi films to prepare one NiO film with a thickness of 155 nm; and two sub-steps for preparing PSCO films are performed on the NiO films to prepare two PSCO films (each 30 nm thick). This results in a memristor device with a layer structure of PSCO / NiO / CBTi / FTO (FTO as the substrate).

[0100] The memristor device obtained in Example 6 has 5 resistance states, a maximum resistance-to-on ratio of 8000, no significant performance degradation after 300 stable cycles, and a high-low resistance switching stability of 10. 3 s showed no significant attenuation.

[0101] This application's embodiments, through a designed fabrication method, produce a CBTi / NiO / PSCO layered composite resistive switching thin film material exhibiting multiple resistive states, a high on / off ratio, high stability, and excellent repeatable bipolar resistive switching characteristics. Specifically, crystalline CaBi4Ti4O... 15 The superposition of the thin film with the crystalline NiO thin film forms a near-superlattice structure, which is beneficial for improving the resistive switching ratio of the NiO / CBTi composite thin film, while also enhancing its cycle characteristics and fatigue resistance, and reducing device power consumption. This is followed by the addition of semi-doped Pr... 0.5 Sr 0.5 CoO3 thin film composites, utilizing metal removal properties and oxygen-vacancy ordered structures, yielded multiple resistance states (5 resistance state values), further improving the bipolar resistive switching ratio (10). 3 ), resistance variable cycle stability (cycle 10) 2 (no significant degradation in secondary performance) and time stability (10) 3 (No significant performance degradation). The Pavlovian dog experiment, applicable to synaptic stimulation transmission, was successfully simulated in memristor devices based on CBTi / NiO / PSCO layered composite resistive switching thin film materials, demonstrating high practical value and economic benefits.

[0102] The CBTi / NiO / PSCO layered composite resistive switching film material of this application is prepared by chemical solution deposition. The preparation method is simple, the preparation temperature is low, the reaction is easy to carry out, the prepared film has good uniformity, excellent and stable performance, and is easy to realize industrial production.

[0103] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0104] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material, characterized in that, Includes the following steps: Step 1: Take Ca(CH3COO)2·H2O, Bi(NO3)3·5H2O, and C in a molar ratio of 1:4:

4. 16 H 36 O4Ti, dissolve Ca(CH3COO)2·H2O in the first solvent, stir until homogeneous, add pH adjuster, and continue stirring to obtain the first solution; dissolve Bi(NO3)3·5H2O in the second solvent, stir until homogeneous, add pH adjuster dropwise, and continue stirring to obtain the second solution; mix the first and second solutions and continue stirring to obtain the third solution; C 16 H 36 O4Ti is dissolved in a third solvent and stirred to obtain a fourth solution. The third solution and the fourth solution are mixed, stirred, and then allowed to stand and age to obtain the first precursor solution. Step 2: Dissolve Ni(CH3COO)2·4H2O in the fourth solvent, stir until homogeneous, add pH adjuster, continue stirring, add stabilizing coupling agent dropwise, heat in water bath and let stand to age, to obtain the second precursor solution; Step 3: Dissolve Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 in the fifth solvent, stir until homogeneous, add coupling agent dropwise, continue stirring, add stabilizer dropwise, continue stirring, and let stand to age to obtain the third precursor solution; Step four involves setting up sub-steps for preparing CBTi thin films, NiO thin films, and PSCO thin films, respectively. The sub-steps for preparing CBTi thin films include: spin-coating, baking, and annealing the first precursor solution to obtain a crystalline CBTi thin film with the chemical formula CaBi4Ti4O. 15 ; The sub-steps for preparing NiO thin films include: spin-coating, baking, and annealing the second precursor solution to obtain a crystalline NiO thin film with the chemical formula NiO; The sub-steps for preparing PSCO thin films include: spin-coating, baking, and annealing the third precursor solution to obtain an amorphous PSCO thin film with the chemical formula Pr. 0.5 Sr 0.5 CoO3; Step 5: Based on the layer structure requirements of the CBTi / NiO / PSCO layered composite resistive switching thin film material, alternately perform the sub-steps for preparing CBTi thin film, NiO thin film, and PSCO thin film to obtain the CBTi / NiO / PSCO layered composite resistive switching thin film material.

2. The method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material according to claim 1, characterized in that, In step one, Ca(CH3COO)2·H2O is dissolved in the first solvent, stirred until homogeneous, and then a pH adjuster is added. Stirring is continued for 1-2 hours to obtain the first solution. Bi(NO3)3·5H2O is dissolved in the second solvent, stirred until homogeneous, and then a pH adjuster is added dropwise. Stirring is continued for 1-2 hours to obtain the second solution. The first and second solutions are mixed and stirred for another 1-2 hours to obtain the third solution. C... 16 H 36 O4Ti is dissolved in the third solvent and stirred for 2-3 hours to obtain the fourth solution. The third solution and the fourth solution are mixed and stirred for 5-6 hours, and then allowed to stand and age for 12-24 hours to obtain the first precursor solution. In step one, the first solvent is ethylene glycol, the pH adjuster is glacial acetic acid, the second solvent is ethylene glycol methyl ether, and the third solvent is acetylacetone. In the first solution, the volume ratio of the first solvent to the pH adjuster is 5:1; in the second solution, the volume ratio of the second solvent to the pH adjuster is 10:1; in the fourth solution, the volume ratio of the third solvent to C... 16 H 36 The volume ratio of O4Ti is 1:

1.

3. The method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material according to claim 1, characterized in that, In step two, Ni(CH3COO)2·4H2O is dissolved in the fourth solvent, stirred evenly, and then a pH adjuster is added. After stirring for 1-2 hours, a stabilizing coupling agent is added dropwise. The mixture is heated in a water bath at 60°C for 2 hours and then allowed to stand for 12-24 hours to obtain the second precursor solution. The fourth solvent in step two is ethylene glycol methyl ether, the pH adjuster is acetic anhydride, and the stabilizing coupling agent is ethanolamine; In the second precursor solution, the volume ratio of the fourth solvent, pH adjuster, and stabilizing coupling agent is 8:1:

1.

4. The method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material according to claim 1, characterized in that, In step three, Pr(NO3)3·6H2O, Sr(NO3)2, and Co(NO3)2·6H2O in a molar ratio of 1:1:2 are dissolved in the fifth solvent. After stirring evenly, a coupling agent is added dropwise. After stirring for 1 to 2 hours, a stabilizer is added dropwise. After stirring for 0.5 to 1 hour, the mixture is allowed to stand and age for 12 to 24 hours to obtain the third precursor solution. The fifth solvent in step three is ethylene glycol methyl ether, the coupling agent is acetic anhydride, and the stabilizer is ethylene glycol; In the third precursor solution, the volume ratio of the fifth solvent, coupling agent, and stabilizer is 5:1:

1.

5. The method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material according to claim 1, characterized in that, The concentration of metal ions in the first precursor solution is 0.085~0.09 mol / L; The concentration of metal ions in the second precursor solution is 0.45~0.5 mol / L; The concentration of metal ions in the third precursor solution is 0.1~0.3 mol / L.

6. The method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material according to claim 1, characterized in that, In the sub-step of preparing CBTi thin film, the first precursor liquid is spin-coated and then baked at 140~180℃ for 10~20 min to obtain its dry film, and then annealed at 500~520℃ for 10~30 min to obtain crystalline CBTi thin film. In the sub-step of preparing NiO thin film, the second precursor liquid is spin-coated and baked at 170~200℃ for 15~20min to obtain its dry film, and then annealed at 500~520℃ for 10~20min to obtain crystalline NiO thin film. In the sub-step of preparing PSCO thin film, the third precursor liquid is spin-coated and then baked at 140~180℃ for 10~20 min to obtain its dry film. It is then annealed at 500~520℃ for 10~30 min to obtain an amorphous PSCO thin film.

7. The method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material according to claim 1, characterized in that, In step five, the layer structure requirements of the CBTi / NiO / PSCO layered composite resistive switching thin film material include three layer structures: PSCO / NiO / CBTi / FTO, NiO / PSCO / CBTi / FTO, and NiO / CBTi / PSCO / FTO, where CBTi represents CBTi thin film, NiO represents NiO thin film, PSCO represents PSCO thin film, and FTO represents substrate.

8. The method for preparing a CBTi / NiO / PSCO layered composite resistive switching thin film material according to claim 1, characterized in that, In step five, the CBTi film of the desired thickness is obtained by repeating the sub-step of preparing the CBTi film; the NiO film of the desired thickness is obtained by repeating the sub-step of preparing the NiO film; and the PSCO film of the desired thickness is obtained by repeating the sub-step of preparing the PSCO film.

9. A CBTi / NiO / PSCO layered composite resistive switching thin film material, characterized in that, The CBTi / NiO / PSCO layered composite resistive switching thin film material is prepared using the preparation method described in any one of claims 1 to 8, comprising layered composite CaBi4Ti4O 15 Thin film, NiO thin film, Pr 0.5 Sr 0.5 CoO3 thin film.

10. The application of the CBTi / NiO / PSCO layered composite resistive switching thin film material as described in claim 9 in resistive switching memory and neural synapse devices.

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