Substrate planarization apparatus and method of controlling the same

Abstract

This application provides a substrate planarization apparatus and its control method, relating to the field of semiconductor technology, to solve the problems of high loss and low production efficiency during substrate planarization. The substrate planarization apparatus includes a processing chamber, in which a first temperature gradient region, a second temperature gradient region, and a constant temperature region can be formed. The temperature of the first temperature gradient region gradually increases along the positive direction of a first direction, the temperature of the second temperature gradient region gradually increases along the negative direction of the first direction, and the temperature of the constant temperature region is greater than or equal to the highest temperature of the first and / or second temperature gradient regions. Thus, the substrate can be processed alternately in the three temperature zones within the processing chamber, achieving substrate planarization and avoiding or reducing substrate loss.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a substrate planarization device and its control method. Background Technology

[0002] Substrates are a key raw material for fabricating semiconductor devices. Fabricating semiconductor devices using substrates typically involves epitaxial processes on the surface of the substrate, which require a flat substrate surface.

[0003] However, when substrates are formed by ingot cutting, the surface roughness of the substrate is relatively large. Depending on the cutting process, the local roughness of the surface can range from tens of micrometers to tens of nanometers, and the uniformity of the substrate surface is also affected by the cutting process. Therefore, planarization treatment is usually required before fabricating semiconductor devices. Currently, the industry mainly uses mechanical polishing and chemical mechanical polishing (CMP) to polish the substrate surface to different degrees.

[0004] Mechanical polishing and chemical mechanical polishing cause significant losses to the substrate material, which reduces cost margins, especially for the fabrication of high-cost silicon carbide (SiC) substrates. Furthermore, the pressure applied to the substrate surface during mechanical or chemical mechanical polishing can create a damaged layer with poor crystallinity.

[0005] Therefore, a planarization scheme is needed to reduce substrate loss and damage. Summary of the Invention

[0006] This application provides a substrate planarization device and its control method to solve problems such as damage to the substrate, high substrate loss, and low production efficiency during substrate planarization.

[0007] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0008] In a first aspect, embodiments of this application provide a substrate planarization apparatus, the apparatus including a processing chamber and a heater, the processing chamber being used to contain a substrate; the heater being used to heat the processing chamber; a first temperature gradient region, a second temperature gradient region, and a constant temperature region can be formed in the processing chamber, the temperature of the first temperature gradient region gradually increases along the positive direction of a first direction, the temperature of the second temperature gradient region gradually increases along the negative direction of the first direction, and the temperature of the constant temperature region is greater than or equal to the lowest temperature of the first temperature gradient region and / or the second temperature gradient region.

[0009] Thus, a temperature zone can be formed in the processing chamber by a heater, and this temperature zone can be influenced by various factors. This allows for the formation of a first temperature gradient zone, a second temperature gradient zone, and an isothermal zone within the processing chamber. When the substrate is in the first temperature gradient zone of the processing chamber, the protruding microstructures on the substrate surface are more prone to decomposition. Driven by the temperature gradient, the atoms from this decomposition move towards lower temperatures, forming the substrate material on the surface of the object opposite the substrate surface, thus achieving planarization of the substrate surface. When the substrate is in the second temperature gradient zone of the processing chamber, the surface of the object opposite the substrate surface also decomposes. The decomposed atoms move towards the substrate surface and grow on it, further contributing to planarization. When the substrate is in the isothermal zone, where the temperature is greater than or equal to the lowest temperature of the first and / or second temperature gradient zones, the substrate will also decompose, but due to the lack of a temperature gradient, atomic movement is less. However, due to the higher temperature in the isothermal zone, atoms on the substrate surface diffuse. During this diffusion process, the protruding microstructures on the substrate surface diffuse into the depressions on the substrate surface, contributing to planarization.

[0010] Therefore, by alternating the substrate treatment in the first temperature gradient region, the isothermal region, and the second temperature gradient region, atoms on the substrate surface will decompose and generate on the substrate surface, which can reduce or avoid substrate loss. At the same time, during this process, the decomposition and surface diffusion of the substrate surface are carried out alternately to achieve substrate planarization, thereby improving the substrate planarization efficiency.

[0011] In one possible implementation of the first aspect, the heater includes a first heater and a second heater, which are respectively disposed on opposite sides of the processing chamber in a first direction. Thus, by controlling the heating capacity of the first and second heaters on the processing chamber, a first temperature gradient region, a second temperature gradient region, and a constant temperature region can be formed in the processing chamber, allowing the substrate to be processed alternately in these three regions.

[0012] In one possible implementation of the first aspect, the heating power of at least one of the first heater and the second heater is adjustable; and / or, the processing chamber includes a first end and a second end opposite to each other in a first direction, with the first heater disposed adjacent to the first end and the second heater disposed adjacent to the second end; the distance from the first heater to the first end is adjustable, and / or the distance from the second heater to the second end is adjustable. Thus, the heating capacity of the first heater and the second heater on the processing chamber can be adjusted by regulating the heating power and position of the first heater and / or the second heater; the method is simple and easy to implement.

[0013] In one possible implementation of the first aspect, the substrate planarization apparatus further includes a heat dissipation structure for cooling a target region within the processing chamber. Thus, by cooling the target region through the heat dissipation structure, during the transition from a first temperature gradient region to a second temperature gradient region, the heat dissipation structure can rapidly cool the higher-temperature locations within the first and / or second temperature gradient regions, enabling the processing chamber to quickly switch between the first and second temperature gradient regions.

[0014] In one possible implementation of the first aspect, a heater is arranged around a processing chamber; along a first direction, a first temperature gradient region is formed on one side of the heater, and a second temperature gradient region is formed on the other side of the heater; a constant temperature region is formed between the first temperature gradient region and the second temperature gradient region. Thus, the first temperature gradient region, the second temperature gradient region, and the constant temperature region can be formed simultaneously in the processing chamber, avoiding the switching between the first temperature gradient region, the second temperature gradient region, and the constant temperature region that would affect production efficiency.

[0015] In one possible implementation of the first aspect, the substrate planarization apparatus further includes a substrate cassette and a drive mechanism. The substrate cassette is used to hold the substrate, and the drive mechanism is connected to the substrate cassette and is used to move the substrate cassette between a first temperature gradient region, a constant temperature region, and a second temperature gradient region. Thus, by moving the substrate cassette via the drive mechanism, the substrate in the substrate cassette can be processed in three temperature zones. Understandably, the heater of the substrate planarization apparatus can remain stationary during this process.

[0016] In one possible implementation of the first aspect, the heater includes a first heater and a second heater, which are spaced apart along a first direction; a first temperature gradient region is formed on the side of the first heater away from the second heater, and a second temperature gradient region is formed on the side of the second heater away from the first heater; a constant temperature region is formed at least between the first heater and the second heater. Thus, a constant temperature region can be formed in the area of ​​the processing chamber located between the first heater and the second heater, and the temperature of the constant temperature region can be made more constant by controlling the first heater and the second heater.

[0017] In one possible implementation of the first aspect, the processing chamber further includes a preheating zone located on the side of the first temperature gradient zone away from the isothermal zone along a first direction. Thus, the substrate can be preheated before planarization, and since the preheating zone is also located within the processing chamber, the substrate can be easily moved to the first temperature gradient zone, the isothermal zone, or the second temperature gradient zone for processing after preheating.

[0018] In one possible implementation of the first aspect, the heater is disposed around the processing chamber and is movable along a first direction. Thus, the heater can be moved to one side of the substrate in the processing chamber to form a temperature gradient in the region where the substrate is located, for example, forming a first temperature gradient region; the heater can also be moved to the other side of the substrate in the processing chamber to form another temperature gradient in the region where the substrate is located, for example, forming a second temperature gradient region; simultaneously, the heater can also be moved to the position of the corresponding substrate in the processing chamber to form a constant temperature region in the region where the substrate is located. Therefore, by moving the heater, the substrate can be processed in the first temperature gradient region, the constant temperature region, or the second temperature gradient region.

[0019] In one possible implementation of the first aspect, the substrate is fixed in position within the processing chamber. This avoids moving the substrate during planarization, eliminates the need for mechanisms to move the substrate within the processing chamber, and reduces equipment complexity.

[0020] In one possible implementation of the first aspect, the pressure in the isothermal region is greater than the pressure in the first temperature gradient region and the second temperature gradient region. Thus, the greater pressure reduces the movement of atoms decomposing on the substrate surface, increases the diffusion capacity of the substrate surface, and thereby enhances the planarization effect of the isothermal region on the substrate.

[0021] In one possible implementation of the first aspect, the processing chamber includes an air inlet for conveying raw materials into the processing chamber, the raw materials including elements constituting the substrate. Thus, the raw materials can be conveyed to the substrate during the substrate planarization process, allowing the raw materials to participate in the substrate planarization process and improving the efficiency of substrate planarization.

[0022] In one possible implementation of the first aspect, the temperature changes per unit distance in the first temperature gradient region and the second temperature gradient region are equal along the first direction. Thus, the processing speed of the substrate in the first and second temperature gradient regions is similar, which helps simplify the process control of substrate planarization, such as the processing time of the substrate in the first and second temperature gradient regions.

[0023] Secondly, this application provides a control method for a substrate planarization apparatus, the substrate planarization apparatus including a processing chamber, a first heater, and a second heater, the first heater and the second heater being disposed on opposite sides of the processing chamber in a first direction; the control method includes: placing a substrate in the processing chamber; making the heating power of the first heater less than the heating power of the second heater to form a first temperature gradient region in the processing chamber, the temperature of the first temperature gradient region gradually increasing along the positive direction of the first direction; making the heating power of the first heater equal to the heating power of the second heater to form a constant temperature region in the processing chamber; making the heating power of the first heater greater than the heating power of the second heater to form a second temperature gradient region in the processing chamber, the temperature of the second temperature gradient region gradually increasing along the negative direction of the first direction.

[0024] Thirdly, this application provides a control method for a substrate planarization apparatus. The substrate planarization apparatus includes a processing chamber and a heater, with the heater arranged around the processing chamber. The control method includes: placing a substrate in the processing chamber; maintaining a constant heating power of the heater; forming a first temperature gradient region in a region located on one side of the heater in the processing chamber, with the temperature of the first temperature gradient region gradually increasing along the positive direction of a first direction; forming a second temperature gradient region in a region located on the other side of the heater in the processing chamber, with the temperature of the second temperature gradient region gradually increasing along the negative direction of the first direction; forming a constant temperature region in a region between the first temperature gradient region and the second temperature gradient region; and moving the substrate between the first temperature gradient region, the constant temperature region, and the second temperature gradient region.

[0025] Fourthly, this application provides a control method for a substrate planarization apparatus. The substrate planarization apparatus includes a processing chamber and a heater. The heater is disposed around the processing chamber and is movable between two ends of the processing chamber along a first direction. The control method includes: placing a substrate in the processing chamber; moving the heater to one side of the processing chamber corresponding to the substrate position to form a first temperature gradient region in the region where the substrate is located, the temperature of the first temperature gradient region gradually increasing along the positive direction of the first direction; moving the heater to the processing chamber corresponding to the substrate position to form a constant temperature region in the region where the substrate is located; and moving the heater to the other side of the processing chamber corresponding to the substrate position to form a second temperature gradient region in the region where the substrate is located, the temperature of the second temperature gradient region gradually increasing along the negative direction of the first direction.

[0026] The second to fourth aspects involve adjusting the heating power of the heater, moving the position of the heater, changing the position of the substrate, etc., so that the substrate can be processed in the first temperature gradient region, the constant temperature region, and the second temperature gradient region. By alternating the processing of the substrate in these three temperature regions, the planarization efficiency of the substrate can be improved, and substrate loss can be avoided or reduced. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the substrate planarization process provided in an embodiment of this application;

[0028] Figure 2 This is a schematic diagram of another substrate planarization process provided in an embodiment of this application;

[0029] Figure 3 This is a schematic diagram of the structure of a substrate planarization device provided in an embodiment of this application;

[0030] Figure 4 This is a schematic diagram of another substrate planarization device provided in an embodiment of this application;

[0031] Figure 5 This is a schematic diagram of the structure of another substrate planarization device provided in the embodiments of this application;

[0032] Figure 6 A flowchart illustrating a control method for a substrate planarization apparatus provided in this application embodiment;

[0033] Figure 7 A flowchart illustrating another control method for a substrate planarization apparatus provided in this application embodiment;

[0034] Figure 8 A flowchart of a control method for a substrate planarization apparatus provided in an embodiment of this application. Detailed Implementation

[0035] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by those skilled in the art. The terms "first," "second," "third," and similar words used in this application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include one or more of that feature. In the description of embodiments in this application, unless otherwise stated, "a plurality of" means two or more.

[0036] The directional terms such as “left,” “right,” “up,” and “down” are defined relative to the orientation of the device shown in the accompanying drawings. It should be understood that these directional terms are relative concepts used for relative description and clarification, and they can change accordingly depending on the orientation of the substrate.

[0037] To reduce substrate loss during planarization, please refer to [link / reference]. Figure 1 , Figure 1This is a schematic diagram of a substrate planarization process. For ease of explanation, this application uses silicon carbide as an example. It is understood that a similar process can occur for other types of substrates. Substrates 11 and 12 are spaced apart. When substrates 11 and 12 are heated, for example, to a temperature above 1600°C and below 2400°C, substrates 11 and 12 will decompose thermally. The silicon atoms generated by the decomposition of silicon carbide on the lower surface of substrates 11 and 12 will detach from the substrate surface to form silicon vapor, while carbon atoms will remain on the lower surface of substrates 11 and 12.

[0038] Next, silicon vapor near the lower surface of substrate 11 reacts with carbon atoms remaining on the lower surface of substrate 11 to form SiC2 or Si2C and then sublimates. The sublimated SiC2 or Si2C diffuses, and simultaneously, driven by the temperature gradient, SiC2 or Si2C moves from the lower surface of substrate 11 to the upper surface of substrate 12, where it grows.

[0039] In other words, between two substrates spaced apart in a temperature field with a temperature gradient, atoms (specifically, molecules composed of these atoms) from one substrate are transported to the surface of the other substrate and grow there. During this process, atoms on both substrate surfaces may decompose, with the protruding microstructures on the substrate surfaces being more prone to decomposition, thereby achieving substrate surface planarization. Understandably, because the atoms generated from this decomposition grow on the lower-temperature substrate driven by the temperature gradient, this growth is more likely to occur in the depressions on the substrate surface, further enhancing substrate planarization.

[0040] To improve the planarization efficiency of the above-mentioned process on the substrate surface, this application proposes a substrate planarization apparatus. This apparatus can change the temperature gradient and process the substrate 11 in various ways to improve the planarization speed of the substrate 11. For example, it may include changing the direction of the temperature gradient.

[0041] Please see Figure 2 By changing the direction of the temperature gradient, substrate 12 is positioned at a higher temperature, while substrate 11 is positioned at a lower temperature. Driven by the temperature gradient, SiC2 or Si2C primarily moves towards substrate 11, thus planarizing substrate 12. Simultaneously, during planarization, the positions of substrates 11 and 12, or the direction of the temperature gradient, are alternately changed, allowing both substrates 11 and 12 to grow and decompose. This involves alternately growing silicon carbide in the depressions on the substrate surface and decomposing the protruding fine structures on the substrate surface, thereby increasing the planarization speed of substrates 11 and 12.

[0042] Understandably, the time for changing the direction of the temperature gradient between substrate 11 and substrate 12 can be adjusted as needed. For example, in the first time period, substrate 11 is at a lower temperature; in the second time period, substrate 12 is at a lower temperature, and the duration of the first and second time periods can be determined as needed. Furthermore, the duration for which substrate 11 is at a lower temperature each time can be equal or unequal, and similarly, the duration for which substrate 12 is at a lower temperature each time can also be equal or unequal.

[0043] Although the example is illustrated using substrates 11 and 12, the substrate requiring planarization can also be spaced apart from other components including substrate material to perform the above-described process. For example, the component could be a substrate holder made of a material that forms the substrate, the substrate could be disposed in the substrate holder, and the surface of the substrate requiring planarization could be spaced apart from the substrate holder.

[0044] Specifically, please see Figure 3 , Figure 3 This is a schematic diagram of a substrate planarization apparatus 100 provided in an embodiment of this application. The substrate planarization apparatus 100 may include a processing chamber 110 and a heater 120.

[0045] The processing chamber 110 can accommodate a substrate 111 to be planarized, which, as previously described, can be a silicon carbide (SiC), aluminum nitride (AlN), or gallium nitride (GaN) substrate. The material of the processing chamber 110 can be a high-temperature resistant material. Exemplarily, the material of the processing chamber 110 can include high-melting-point metals, such as one or more of steel, tungsten, and molybdenum. Exemplarily, the material of the processing chamber 110 can include carbon or carbides, such as titanium carbide, tungsten carbide, or molybdenum carbide. Exemplarily, the material of the processing chamber 110 can also include other high-temperature resistant materials, such as nitrides or borides. Thus, during the planarization process of the substrate 111, the processing chamber 110 can withstand high temperatures, ensuring that the substrate planarization device 100 can operate normally at high temperatures.

[0046] Multiple substrates 111 can be disposed in the processing chamber 110, with the substrates 111 spaced apart and stacked. In this way, atoms and the like constituting the substrate 111 can be transported between the two opposing surfaces of adjacent substrates 111, achieving planarization. It is understood that a single substrate 111 can also be disposed in the processing chamber 110. In this case, a portion of the processing chamber 110 may include the material constituting the substrate 111, and this portion is spaced apart from and opposite the surface of the substrate 111 that needs to be planarized.

[0047] Exemplarily, a substrate cassette 112 may also be accommodated in the processing chamber 110, which may be used to accommodate a substrate 111. The material of the substrate cassette 112 may include the material that forms the substrate, the substrate 111 may be disposed in the substrate cassette 112, and the surface of the substrate that needs to be planarized is spaced apart from the surface of the substrate cassette 111.

[0048] The substrate cassette 112 may include multiple supports for spacedly arranging multiple substrates 111 in the processing chamber 110. The substrate cassette 112 is not enclosed, allowing the substrates 111 to communicate with other areas within the processing chamber 110, facilitating control during the planarization process of the substrates 111. For example, a doping gas can be introduced into the processing chamber 110 during planarization, thereby doping the substrates 111 simultaneously with planarization. The doping gas can be an inert gas, such as nitrogen, helium, or argon. The inert gas can be introduced into the processing chamber 110 through an inlet 116.

[0049] A heater 120 may be disposed outside the processing chamber 110 for heating the processing chamber 110. The heater 120 can be any type of heater; for example, it can be a resistance heater or an induction heater. Understandably, in order to planarize the substrate 111 within the processing chamber 110, a temperature field needs to be formed within the processing chamber 110. After the heater 120 heats the processing chamber 110, a temperature field is formed within it. The temperature range of this temperature field can be 1600°C to 2400°C; for example, the lowest temperature of the temperature field can be 1600°C, 1700°C, or 1800°C, and the highest temperature can be 2000°C, 2100°C, 2200°C, 2300°C, or 2400°C. Understandably, to monitor the planarization process, the substrate planarization apparatus 100 may also include a temperature measuring device to monitor the temperature of the substrate 111 during the processing. For example, the temperature measuring device can be an infrared temperature measuring device to monitor the temperature of the substrate 111 surface. Other commonly used temperature measuring devices can also be used, which will not be described in detail in this application.

[0050] The processing chamber 110 can form a first temperature gradient region 1101, a second temperature gradient region 1102, and a constant temperature region 1103.

[0051] The temperature of the first temperature gradient region 1101 gradually increases along the positive direction of the first direction D. The first direction D may coincide with the normal direction of the substrate 111 surface after the substrate 111 is positioned in the processing chamber. The first direction D may also form an angle with the normal direction of the substrate 111 surface, which is an acute angle, such as 15°, 30°, or 60°. The temperature increase range can be from 0.1℃ / mm to 5℃ / mm, with a minimum increase of 0.1℃ / mm, 0.5℃ / mm, or 1℃ / mm, and a maximum increase of 2℃ / mm, 3℃ / mm, or 5℃ / mm. Understandably, the temperature increase at different locations along the first direction D can be the same or different. For example, along the first direction D, the temperature increase at a certain location in the first temperature gradient region 1101 may be 0.1℃ / mm, 0.5℃ / mm, 1℃ / mm, 3℃ / mm, or 5℃ / mm.

[0052] Understandably, the temperature in the processing chamber 110 may be affected by various factors, such as the heating capacity of the heater 120, the heat dissipation capacity of each part of the processing chamber 110, and design deviations. Therefore, in the first temperature gradient region 1101, there may be areas where the temperature remains constant or decreases slightly along the positive direction of the first direction D. However, for the entire first temperature gradient region 1101, the temperature tends to rise along the positive direction of the first direction D. That is to say, the gradual increase in temperature described in this application allows for a certain deviation. For example, the slight decrease in temperature may be less than or equal to 0.1℃ / mm. Furthermore, the size of the area where the temperature remains constant or decreases slightly along the first direction D is less than or equal to 1 / 10 of the size of the first temperature gradient region 1101 along the first direction D; or, when multiple substrates 111 are spaced apart and stacked in the processing chamber 110, the size of the area where the temperature remains constant or decreases slightly along the first direction D is less than the spacing between adjacent substrates 111.

[0053] The temperature of the second temperature gradient region 1102 gradually increases along the negative direction of the first direction D. That is, along the first direction D, the temperature change of the second temperature gradient region 1102 is opposite to the temperature change of the first temperature gradient region 1101. The range of temperature change in the second temperature gradient region 1102 can be referred to that of the first temperature gradient region 1101, and will not be repeated here.

[0054] Understandably, along the first direction D, the temperature change amplitude of the first temperature gradient region 1101 and the second temperature gradient region 1102 per unit distance can be equal. Thus, the planarization rate of the substrate 111 in the first temperature gradient region 1101 can be approximately equal to the planarization rate of the substrate 111 in the second temperature gradient region 1102. Even if the planarization rates of the two surfaces of the substrate 111 are equal, it is convenient to simplify the control of the entire process.

[0055] The temperature of the constant temperature zone 1103 is greater than or equal to the lowest temperature of the first temperature gradient zone 1101 and / or the second temperature gradient zone 1102. For example, the temperature of the constant temperature zone 1103 can be 1600℃, 1800℃, 2000℃, etc. Further, the temperature of the constant temperature zone 1103 can be greater than or equal to the highest temperature of the first temperature gradient zone 1101 and / or the second temperature gradient zone 1102. Based on the highest temperature of the first temperature gradient zone 1101 and / or the second temperature gradient zone 1102, the temperature of the constant temperature zone 1103 can be 2100℃, 2200℃, 2300℃, or 2400℃, etc. It can be understood that the constant temperature zone 1103 means that the temperature in this region remains constant along the first direction D. Similarly, a constant temperature can also include situations where the temperature slightly increases or decreases. For example, the slight decrease in temperature can be less than or equal to 0.1℃ / mm.

[0056] When substrate 111 is in isothermal region 1103, because the temperature of isothermal region 1103 is greater than or equal to the highest temperature of first temperature gradient region 1101 and / or second temperature gradient region 1102, substrate 111 will also decompose. However, due to the lack of temperature gradient driving force, the sublimation of silicon atoms on the surface of substrate 111 is suppressed, thus reducing the formation of SiC2 or Si2C. Therefore, when substrate 111 is in isothermal region 1103, the movement of SiC2 or Si2C between adjacent substrates 111 has a smaller effect on planarization. However, due to the high temperature, the silicon carbide on the surface of substrate 111 will diffuse on the surface of substrate 111 after decomposition. During the diffusion process, the protruding microstructures on the surface of substrate 111 diffuse into the depressions on the surface of substrate 111, which helps to achieve planarization. In addition, when substrate 111 is processed in the first temperature gradient region 1101 and the second temperature gradient region 1102, atoms on the substrate surface will decompose and generate on the substrate surface, which can reduce or avoid substrate loss.

[0057] Please continue reading Figure 3 The heater 120 of the substrate planarization apparatus 100 may include a first heater 120a and a second heater 120b. The first heater 120a and the second heater 120b are respectively disposed on opposite sides of the processing chamber 110 in the first direction D.

[0058] Understandably, the processing chamber 110 includes a first end 110a and a second end 110b opposite each other in a first direction D. A first heater 120a is disposed adjacent to the first end 110a, and a gap may exist between the first heater 120a and the first end 110a. A second heater 120 is disposed adjacent to the second end 110b, and a gap may exist between the second heater 120 and the second end 110b.

[0059] For example, the first heater 120a and the second heater 120b may be the same or different. The same or different here may refer to one or more aspects such as the heating method, shape, heating power, etc. of the first heater 120a and the second heater 120b.

[0060] For example, the first heater 120a and the second heater 120b can both be resistance heaters, or both can be induction heaters, or one of them can be resistance heaters and the other can be induction heaters.

[0061] For example, along the first direction D, the projection of the processing chamber 110 lies within the projection of the first heater 120a. That is, along the first direction D, the end face of the first heater 120a overlaps with that of the processing chamber 110, and the area enclosed by the first heater 120a is larger than the area enclosed by the processing chamber 110. Thus, the first heater 120a can uniformly heat the location of the substrate 111, meaning that the temperature is uniform within a plane perpendicular to the first direction D. The shape of the first heater 120a can be a spiral shape located in a plane, i.e., a mosquito coil shape. The second heater 120b can be configured with reference to the first heater 120a.

[0062] Therefore, by controlling the first heater 120a and the second heater 120b, a first temperature gradient region 1101, a second temperature gradient region 1102, and a constant temperature region 1103 can be formed in the processing chamber 110. Thus, the substrate 111 can be planarized in the first temperature gradient region 1101, the second temperature gradient region 1102, and the constant temperature region 1103 while maintaining its position in the processing chamber 110.

[0063] For example, the heating power of at least one of the first heater 120a and the second heater 120b is adjustable.

[0064] For example, the heating power of both the first heater 120a and the second heater 120b is adjustable. During a first time period, the heating power of the first heater 120a can be greater than that of the second heater 120b, resulting in a higher temperature at the first end 110a of the processing chamber 110 compared to the second end 110b, thus forming a first temperature gradient region 1101 within the processing chamber 110. During a second time period, the heating power of the first heater 120a can be equal to that of the second heater 120b, resulting in a higher temperature at the first end 110a compared to the second end 110b, thus forming a constant temperature region 1103 within the processing chamber 110. During a third time period, the heating power of the first heater 120a can be less than that of the second heater 120b, resulting in a lower temperature at the first end 110a compared to the second end 110b, thus forming a second temperature gradient region 1102 within the processing chamber 110.

[0065] For example, the heating power of the first heater 120a is adjustable, while the heating power of the second heater 120b is not adjustable. At different time intervals, the heating power of the first heater 120a is adjusted so that it is greater than, equal to, and less than the heating power of the second heater 120b, respectively, thereby forming a first temperature gradient region 1101, a constant temperature region 1103, and a second temperature gradient region 1102 in the processing chamber 110.

[0066] For example, the distance from the first heater 120a to the first end 110a is adjustable, and / or the distance from the second heater 120b to the second end 110b is adjustable. Understandably, by adjusting the distance from the heater 120 to the processing chamber 110, the heating capacity of the heater 120 to the processing chamber 110 can be adjusted.

[0067] When the distance from the first heater 120a to the first end 110a is greater than the distance from the second heater 120b to the second end 110b, the temperature of the first end 110a is lower than the temperature of the second end 110b, thus forming a second temperature gradient region 1102 in the processing chamber 110. When the distance from the first heater 120a to the first end 110a is equal to the distance from the second heater 120b to the second end 110b, the temperature of the first end 110a is equal to the temperature of the second end 110b. In this case, although the heating capacity of a single heater to each region of the processing chamber 110 along the first direction D is different, when both heaters 120a on both sides of the processing chamber 110 are heating, the superimposed heating capacity of the heaters 120a on both sides can form a constant temperature region 1103 in the processing chamber 110. When the distance from the first heater 120a to the first end 110a is less than the distance from the second heater 120b to the second end 110b, the temperature of the first end 110a is higher than the temperature of the second end 110b, and a first temperature gradient region 1101 is formed in the processing chamber 110.

[0068] Please continue reading Figure 3 In some embodiments, the substrate planarization apparatus 100 may further include a heat dissipation structure 113 for cooling a target region within the processing chamber 110. Understandably, the cooling rate of the processing chamber 110 may be slow when the heating power of the heater 120 is reduced or the heater 120 is moved away from the processing chamber 110. Therefore, the switching speed between the processing chamber 110 and the first temperature gradient region 1101, the isothermal region 1103, and the second temperature gradient region 1102 is also slow. Cooling the target region using the heat dissipation structure 113 helps to improve the switching speed of the processing chamber 110 between the first temperature gradient region 1101, the isothermal region 1103, and the second temperature gradient region 1102. The target region may include a region near the first end 110a, a region near the second end 110b, or both regions simultaneously. In this case, the heat dissipation structure 113 can select one region for cooling based on the temperature gradient formed as needed.

[0069] For example, the heat dissipation structure 113 may be a cooling pipe disposed in the chamber wall of the processing chamber 110. A cooling medium may be introduced into the cooling pipe to remove some of the heat, thereby cooling down the processing chamber 110 and accelerating the formation of a temperature gradient or constant temperature in the processing chamber 110.

[0070] The cooling conduit may include multiple turns, each turn surrounding the space within the processing chamber 110 that houses the substrate 111. These multiple turns of cooling conduit may be arranged along a first direction D. Therefore, each turn of cooling conduit may surround a portion of the space within the processing chamber 110 that houses the substrate 111; that is, the multiple turns of cooling conduit may correspond to multiple regions within the space within the processing chamber 110 that houses the substrate 111 along the first direction D, where each region can be considered a target region, and the multiple turns of cooling conduit can be controlled independently.

[0071] For example, at the first moment, a constant temperature zone 1103 is formed in the processing chamber 110. By reducing the heating power of the first heater 120a or moving the first heater 120a away from the first end 110a of the processing chamber 110, the first end 110a is cooled to form a second temperature gradient zone 1102 in the processing chamber 110. At this time, by introducing a cooling medium into the cooling pipe near the first end 110a, the rate at which the temperature of the first end 110a decreases can be accelerated, that is, the processing chamber 110 switches from the constant temperature zone 1103 to the second temperature gradient zone 1102 more quickly, thereby improving production efficiency.

[0072] Each cooling pipe can be in the same plane, and the normal direction of this plane can be the same as the first direction D; each cooling pipe can also spiral upward along the first direction D.

[0073] For example, when the heater 120 is heated by an induction coil, the heat dissipation structure 113 may also be a cooling pipe formed on the induction coil, thereby enabling cooling of the first end 110a or the second end 110b of the processing chamber 110.

[0074] Please see Figure 4 The heater 120 can also be arranged around the processing chamber 110. In this case, along the first direction D, a first temperature gradient region 1101 is formed on one side of the heater 120, and a second temperature gradient region 1102 is formed on the other side of the heater 120; a constant temperature region 1103 is formed between the first temperature gradient region 1101 and the second temperature gradient region 1102.

[0075] Understandably, the temperature of the processing chamber 110 will be higher the closer it is to the heater 120. Therefore, the temperature of the processing chamber 110 gradually decreases on both sides away from the heater 120 along the first direction D, thereby forming a first temperature gradient region 1101 on one side of the heater 120 and a second temperature gradient region 1102 on the other side. Furthermore, the heater 120 can extend a certain dimension along the first direction D, and the portion of the processing chamber 110 between the first temperature gradient region 1101 and the second temperature gradient region 1102 is directly opposite the heater 120. Therefore, the heating capacity of the heater 120 in this portion is considerable, and it can be considered that a constant temperature region 1103 is formed in this area.

[0076] Exemplarily, heater 120 may also include a first heater 120a and a second heater 120b, which are spaced apart along a first direction D. Although the first heater 120a and the second heater 120b are spaced apart, both heaters heat the area between them, thus maintaining a constant temperature in the area, forming a constant temperature zone 1103. Consequently, a first temperature gradient zone 1101 may be formed on the side of the first heater 120a away from the second heater 120b, and a second temperature gradient zone 1102 may be formed on the side of the second heater 120b away from the first heater 120a; the constant temperature zone 1103 is formed at least between the first heater 120a and the second heater 120b.

[0077] For example, the substrate planarization apparatus 100 may further include a drive mechanism 114 connected to a substrate cassette 112. The drive mechanism 114 is used to move the substrate cassette 112 between a first temperature gradient region 1101, a constant temperature region 1103, and a second temperature gradient region 1102. Thus, during the planarization of the substrate 111, the substrate 111 can be moved by the drive mechanism 114, thereby allowing the substrate 111 to be processed in the first temperature gradient region 1101, the constant temperature region 1103, or the second temperature gradient region 1102.

[0078] The drive mechanism 114 can be a robotic arm, with one end connected to the substrate cassette 112 and the other end fixed to the processing chamber 110, thereby controlling the robotic arm to move the substrate cassette 112. The drive mechanism 114 may also include a sliding unit and a guide rail disposed on the chamber wall of the processing chamber 110. One end of the sliding unit can slide in the guide rail, and the other end is connected to the substrate cassette 112, thereby moving the substrate cassette 112 when the sliding unit slides.

[0079] Please see Figure 5 In some embodiments, the heater 120 is disposed around the processing chamber 110 and is movable along a first direction D. Thus, the heater 120... Figure 5 Regions 1 to 3 shown can be directly opposite different areas of the processing chamber 110. As mentioned earlier, the area directly opposite the heater 120 is heated relatively uniformly; therefore, this area is a constant temperature zone 1103. Along the first direction D, the further away from the heater 120 the area, the lower the temperature, thus forming a temperature gradient. Therefore, depending on the position of the heater 120 relative to the processing chamber 110, a first temperature gradient zone 1101, a second temperature gradient zone 1102, and a constant temperature zone 1103 can be formed in specific areas within the processing chamber.

[0080] For example, the substrate 111 can be disposed in the processing chamber 110, keeping the substrate 111 stationary during the planarization process. That is, the position of the substrate 111 within the processing chamber 110 is fixed. Thus, when the heater 120 moves to a position directly opposite the substrate 111, such as... Figure 5 In region 2, a constant temperature region 1103 can be formed at the location of substrate 111. When heater 120 moves to one side of substrate 111, for example, to region 1 near the first end 110a, the temperature on one side of substrate 111 is higher than the temperature on the other side, and a first temperature gradient region 1101 can be formed at the location of substrate 111. Similarly, when heater 120 moves to region 3 on the other side of substrate 111, a second temperature gradient region 1102 can be formed at the location of substrate 111. In this way, substrate 111 can be planarized alternately in the first temperature gradient region 1101, the second temperature gradient region 1102, and the constant temperature region 1103 without moving substrate 111.

[0081] In some embodiments, the pressure in the isothermal zone 1103 is greater than the pressure in the first temperature gradient zone 1101 and the second temperature gradient zone 1102. For example, the pressure range of the first temperature gradient zone 1101 and the second temperature gradient zone 1102 can be from 0.01 mbar to 10 mbar, with minimum pressures of 0.01 mbar, 0.05 mbar, 0.1 mbar, 0.2 mbar, etc., and maximum pressures of 0.5 mbar, 1 mbar, 5 mbar, 10 mbar, etc. The pressure in the isothermal zone 1103 can be from 10 mbar to 500 mbar, with minimum pressures of 10 mbar, 20 mbar, 35 mbar, 65 mbar, 100 mbar, etc., and maximum pressures of 100 mbar, 133 mbar, 155 mbar, 213 mbar, 500 mbar, etc.

[0082] As mentioned earlier, the planarization process of substrate 111 in isothermal region 1103 is mainly to allow silicon atoms and the like to diffuse on the surface of substrate 111, thereby enabling the reconstruction of the substrate 111 surface. When the pressure in isothermal region 1103 is greater than the pressure in the first temperature gradient region 1101 and the second temperature gradient region 1102, sublimation is less likely to occur on the surface of substrate 111, increasing the diffusion of silicon atoms and the like on the surface of substrate 111, thereby improving the planarization rate of substrate 111.

[0083] For example, please continue to see Figures 3 to 5The substrate planarization apparatus 100 may include an exhaust port 115 and / or an inlet port 116, through which the air pressure in the processing chamber 110 can be controlled. Understandably, both the exhaust port 115 and the inlet port 116 can be connected to a pipeline, and a valve can be installed on the pipeline, so that the exhaust or inlet can be completely shut off by the valve.

[0084] For example, for Figure 3 The substrate planarization apparatus 100 shown can reduce the suction power of the evacuation port 115 and / or reduce the air intake volume of the inlet 116 when controlling the first heater 120a and the second heater 120b to form a constant temperature zone 1103 in the processing chamber 110. For Figure 4 or Figure 5 The substrate planarization apparatus 100 shown can also reduce the suction power of the suction port 115 and / or reduce the air intake volume of the air inlet 116 when the substrate 111 needs to be processed in the constant temperature zone 1103. In this case, both the suction port 115 and the air inlet 116 can be located close to the substrate 111. This increases the pressure in the processing chamber 110.

[0085] In addition, for Figure 4 The substrate planarization apparatus 100 shown may also have extraction ports 115 at both ends of the processing chamber 110. Understandably, during extraction, the pressure is lower closer to the extraction port 115, thus the isothermal zone 1103 in the middle of the processing chamber 110 is far from the extraction port 115, and its pressure is higher than that of the first temperature gradient zone 1101 and the second temperature gradient zone 1102. Therefore, by designing the length of the processing chamber 110 along the first direction D, the pressure of the isothermal zone 1103 can be maintained at a preset pressure.

[0086] For example, the substrate planarization apparatus 100 may further include a pressure monitoring device to monitor the pressure in the processing chamber 110. The pressure monitoring device may be installed on a pipe communicating with the communication port 117 of the processing chamber 110. A vacuum valve may be installed on the pipe, so that when measurement is required, the vacuum valve is opened to connect the pressure monitoring device to the processing chamber 110 for measurement. The number of pressure monitoring devices may be multiple; for example, for... Figure 4 The substrate planarization device 100 shown may be equipped with a pressure monitoring device in the first temperature gradient region 1101, the second temperature gradient region 1102 and the constant temperature region 1103 respectively.

[0087] Please continue reading Figures 3 to 5The air inlet 116 can also be used to deliver raw materials, including elements constituting the substrate 111, into the processing chamber 110. For example, silicon raw materials can be delivered into the processing chamber 110 through the air inlet 116, and the silicon raw materials can be delivered into the processing chamber 110 in the form of vapor or powder. In this way, the supply of raw materials can be increased, thereby increasing the speed of the substrate 111 planarization process to achieve the desired surface morphology of the substrate 111. There can be multiple air inlets 116, which can be arranged in a ring around the space in the processing chamber 110 where the substrate 111 is disposed. Multiple air inlets 116 can be evenly arranged to achieve uniform supply of raw materials and improve the uniformity of planarization and / or doping.

[0088] In some embodiments, the processing chamber 110 may further include a preheating zone 1104. The temperature range of the preheating zone 1104 may be 700°C to 1200°C. For example, the minimum temperature of the preheating zone 1104 may be 700°C, 800°C, or 850°C, and the maximum temperature of the preheating zone 1104 may be 900°C, 950°C, 1000°C, or 1100°C. Thus, the substrate 111 can be preheated in the preheating zone 1104 before planarization, avoiding a sudden temperature rise in the substrate 111 that could damage it.

[0089] For example, please see Figure 4 The preheating zone 1104 is located on the side of the first temperature gradient zone 1101 away from the constant temperature zone 1103 along the first direction D. At this time, the preheating zone 1104 is furthest from the heater 120; therefore, the preheating zone 1104 may have a temperature lower than that of the first temperature gradient zone 1101, the second temperature gradient zone 1102, or the constant temperature zone 1103. For example, please refer to... Figure 5 Increasing the distance between the heater 120 and the substrate 111 reduces the heating of the substrate 111, resulting in a lower temperature at the substrate 111 and thus forming a preheating zone. For example, when the heater 120 moves to region 4, a preheating zone 1104 can be formed at the location of the substrate 111.

[0090] In addition, embodiments of this application also provide various control methods for the substrate planarization apparatus 100.

[0091] Please see Figure 6 and combined Figure 3 , Figure 6 This is a flowchart illustrating a control method for a substrate planarization apparatus 100 provided in an embodiment of this application. The substrate planarization apparatus 100 includes a processing chamber 110, a first heater 120a, and a second heater 120b, which are respectively disposed on opposite sides of the processing chamber 110 in a first direction D. The control method for the substrate planarization apparatus 100 includes the following steps:

[0092] S110, The substrate 111 is placed in the processing chamber 110.

[0093] Multiple substrates 111 may be spaced apart in the processing chamber 110. Alternatively, a single substrate 111 may be disposed in the processing chamber 110 with its surface facing another surface comprising the material of the substrate 111. For example, the substrate 111 may be disposed in the processing chamber 110 via a substrate cassette 112 comprising the material of the substrate 111, with the surfaces of the substrate 111 and the substrate cassette 112 spaced apart.

[0094] S120, the heating power of the first heater 120a is made less than the heating power of the second heater 120b, and a first temperature gradient region 1101 is formed in the processing chamber 110, and the temperature of the first temperature gradient region 1101 gradually increases along the positive direction of the first direction.

[0095] Since the heating power of the first heater 120a is less than that of the second heater 120b, the temperature of the region of the processing chamber 110 near the first heater 120a is lower than the temperature of the region of the processing chamber 110 near the second heater 120b, thus forming a first temperature gradient region 1101 in the processing chamber 110. Therefore, the substrate 111 disposed in the processing chamber 110 can be processed in the first temperature gradient region 1101.

[0096] S130, make the heating power of the first heater 120a equal to the heating power of the second heater 120b, and form a constant temperature zone 1103 in the processing chamber 110.

[0097] In this way, diffusion can occur on the surface of substrate 111. During the diffusion process, the protruding microstructures on the surface of substrate 111 diffuse into the depressions on the surface of substrate 111, which helps to achieve planarization. After diffusion, the surface of substrate 111 can also be reconstructed, which is beneficial for the decomposition of the surface of substrate 111 in the first temperature gradient region 1101 and / or the second temperature gradient region 1102 to generate silicon vapor, thereby increasing the planarization rate.

[0098] S140, make the heating power of the first heater greater than the heating power of the second heater, and form a second temperature gradient region 1102 in the processing chamber. The temperature of the second temperature gradient region 1102 gradually increases in the negative direction of the first direction.

[0099] When the heating power of the first heater 120a is greater than the heating power of the second heater 120b, the temperature of the region of the processing chamber 110 near the first heater 120a is higher than the temperature of the region of the processing chamber 110 near the second heater 120b, that is, a second temperature gradient region 1102 is formed in the processing chamber 110. Therefore, the substrate 111 disposed in the processing chamber 110 can be processed in the second temperature gradient region 1102.

[0100] Thus, during the planarization process of substrate 111, between the processing of substrate 111 in the first temperature gradient region 1101 and the processing in the second temperature gradient region 1102, a process of processing in the isothermal region 1103 is added, thereby increasing the speed of substrate 111 planarization and improving production efficiency.

[0101] Please see Figure 7 and combined Figure 4 , Figure 7 A flowchart illustrating a control method for another substrate planarization apparatus 100 provided in this application embodiment. The substrate planarization apparatus 100 includes a processing chamber 110 and a heater 120, the heater 120 being disposed around the processing chamber 110; the control method includes:

[0102] S210, The substrate 111 is placed in the processing chamber 110.

[0103] S220. Keeping the heating power of heater 120 constant, a first temperature gradient region 1101 is formed in the processing chamber 110 on one side of heater 120, and the temperature of the first temperature gradient region 1101 gradually increases along the positive direction of the first direction D; a second temperature gradient region 1102 is formed in the processing chamber 110 on the other side of heater 120, and the temperature of the second temperature gradient region 1102 gradually increases along the negative direction of the first direction D; a constant temperature region 1103 is formed in the region between the first temperature gradient region 1101 and the second temperature gradient region 1102.

[0104] Thus, a first temperature gradient region 1101, a second temperature gradient region 1102, and a constant temperature region 1103 are formed simultaneously in different regions of the processing chamber 110 of the substrate planarization device 100.

[0105] S230, the substrate 111 is moved between the first temperature gradient region 1101, the isothermal region 1103 and the second temperature gradient region 1102.

[0106] By moving the substrate 111 between the first temperature gradient region 1101, the constant temperature region 1103, and the second temperature gradient region 1102, the substrate 111 can be alternately processed in the aforementioned three temperature regions.

[0107] Please see Figure 8 and combinedFigure 5 , Figure 8 A flowchart illustrating a control method for another substrate planarization apparatus 100 provided in this application embodiment. The substrate planarization apparatus 100 includes a processing chamber 110 and a heater 120. The heater 120 is disposed around the processing chamber 110 and is movable between the two ends of the processing chamber 110 along a first direction. The control method includes:

[0108] S310. The substrate 111 is placed in the processing chamber 110.

[0109] S320, the heater 120 is moved to one side of the processing chamber 110 corresponding to the position of the substrate 111, and a first temperature gradient region 1101 is formed in the region where the substrate 111 is located. The temperature of the first temperature gradient region 1101 gradually increases along the positive direction of the first direction.

[0110] Moving the heater 120 to one side of the processing chamber 110 corresponding to the substrate 111 can make the temperature of the substrate 111 on that side higher than that on the other side, thereby forming a temperature gradient (such as a first temperature gradient region 1101) and allowing the substrate 111 to be processed in the temperature gradient.

[0111] S330, move the heater 120 to the position of the corresponding substrate 111 in the processing chamber 110, and form a constant temperature zone 1103 in the area where the substrate 111 is located.

[0112] When the heater 120 is positioned at the corresponding substrate 111 in the processing chamber 110, a region with a roughly constant temperature (constant temperature zone 1103) can be formed in the area where the substrate 111 is located, thus allowing the substrate 111 to be processed in the constant temperature zone 1103.

[0113] S340, the heater 120 is moved to the other side of the position of the substrate 111 in the processing chamber 110, and a second temperature gradient region 1102 is formed in the region where the substrate 111 is located. The temperature of the second temperature gradient region 1102 gradually increases in the negative direction of the first direction.

[0114] The heater 120 is moved to the other side of the position of the corresponding substrate 111 in the processing chamber 110. Similarly, a temperature gradient opposite to that in step S320 (such as a second temperature gradient region 1102) can be formed in the processing chamber 110 so that the substrate 111 is processed in the opposite temperature gradient.

[0115] In general, during the processing of substrate 111, by adjusting the heating power of heater 120, moving the position of heater, changing the position of substrate 111, etc., substrate 111 can be processed in the first temperature gradient region 1101, the constant temperature region 1103, and the second temperature gradient region 1102. By alternating the processing of substrate 111 in these three temperature regions, for example, by periodically processing substrate 111 in these three temperatures, the planarization efficiency of substrate 111 can be improved.

[0116] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A substrate planarization apparatus, characterized in that, include: Processing chamber for accommodating the substrate; A heater is used to heat the processing chamber; The processing chamber can form a first temperature gradient region, a second temperature gradient region, and a constant temperature region. The temperature of the first temperature gradient region gradually increases along the positive direction of the first direction, the temperature of the second temperature gradient region gradually increases along the negative direction of the first direction, and the temperature of the constant temperature region is greater than or equal to the lowest temperature of the first temperature gradient region and / or the second temperature gradient region.

2. The substrate planarization apparatus as described in claim 1, characterized in that, The heater includes a first heater and a second heater, which are respectively disposed on opposite sides of the processing chamber in the first direction.

3. The substrate planarization apparatus as described in claim 2, characterized in that, The heating power of at least one of the first heater and the second heater is adjustable; And / or, The processing chamber includes a first end and a second end opposite to each other in the first direction, the first heater is disposed adjacent to the first end, and the second heater is disposed adjacent to the second end; the distance from the first heater to the first end is adjustable, and / or the distance from the second heater to the second end is adjustable.

4. The substrate planarization apparatus as described in claim 2 or 3, characterized in that, It also includes a heat dissipation structure for cooling the target area in the processing chamber.

5. The substrate planarization apparatus as described in claim 1, characterized in that, The heater is arranged around the processing chamber; Along the first direction, the first temperature gradient region is formed on one side of the heater, and the second temperature gradient region is formed on the other side of the heater; the constant temperature region is formed between the first temperature gradient region and the second temperature gradient region.

6. The substrate planarization apparatus as described in claim 5, characterized in that, It also includes a substrate cassette and a drive mechanism. The substrate cassette is used to carry the substrate, and the drive mechanism is connected to the substrate cassette and is used to move the substrate cassette between the first temperature gradient region, the isothermal region and the second temperature gradient region.

7. The substrate planarization apparatus as described in claim 5 or 6, characterized in that, The heater includes a first heater and a second heater, which are spaced apart along the first direction; The first temperature gradient region is formed on the side of the first heater away from the second heater, and the second temperature gradient region is formed on the side of the second heater away from the first heater; the constant temperature region is formed at least between the first heater and the second heater.

8. The substrate planarization apparatus according to any one of claims 5 to 7, characterized in that, The processing chamber further includes a preheating zone, which is located on the side of the first temperature gradient zone away from the constant temperature zone along the first direction.

9. The substrate planarization apparatus as described in claim 1, characterized in that, The heater is arranged around the processing chamber and is movable along the first direction.

10. The substrate planarization apparatus as described in claim 9, characterized in that, The substrate is fixed in position within the processing chamber.

11. The substrate planarization apparatus according to any one of claims 1 to 10, characterized in that, The pressure in the constant temperature zone is greater than the pressure in the first temperature gradient zone and the second temperature gradient zone.

12. The substrate planarization apparatus according to any one of claims 1 to 11, characterized in that, The processing chamber includes an air inlet for conveying raw materials into the processing chamber, the raw materials including elements constituting the substrate.

13. The substrate planarization apparatus according to any one of claims 1 to 12, characterized in that, Along the first direction, the temperature change amplitude of the first temperature gradient region and the second temperature gradient region is equal per unit distance.

14. A control method for a substrate planarization apparatus, characterized in that, The substrate planarization apparatus includes a processing chamber, a first heater, and a second heater, wherein the first heater and the second heater are respectively disposed on opposite sides of the processing chamber in a first direction; the control method includes: The substrate is disposed in the processing chamber; The heating power of the first heater is made less than that of the second heater, forming a first temperature gradient region in the processing chamber, wherein the temperature of the first temperature gradient region gradually increases along the positive direction of the first direction. The heating power of the first heater is made equal to the heating power of the second heater, thus forming a constant temperature zone in the processing chamber; The heating power of the first heater is made greater than that of the second heater, forming a second temperature gradient region in the processing chamber, wherein the temperature of the second temperature gradient region gradually increases in the negative direction of the first direction.

15. A control method for a substrate planarization apparatus, characterized in that, The substrate planarization apparatus includes a processing chamber and a heater, the heater being disposed around the processing chamber; the control method includes: The substrate is disposed in the processing chamber; Keeping the heating power of the heater constant, a first temperature gradient zone is formed in the region located on one side of the heater in the processing chamber, and the temperature of the first temperature gradient zone gradually increases along the positive direction of the first direction; a second temperature gradient zone is formed in the region located on the other side of the heater in the processing chamber, and the temperature of the second temperature gradient zone gradually increases along the negative direction of the first direction; a constant temperature zone is formed in the region between the first temperature gradient zone and the second temperature gradient zone. The substrate is moved between the first temperature gradient region, the isothermal region, and the second temperature gradient region.

16. A control method for a substrate planarization apparatus, characterized in that, The substrate planarization apparatus includes a processing chamber and a heater, the heater being disposed around the processing chamber and movable between two ends of the processing chamber along a first direction; the control method includes: The substrate is disposed in the processing chamber; The heater is moved to one side of the processing chamber corresponding to the position of the substrate, forming a first temperature gradient region in the area where the substrate is located, and the temperature of the first temperature gradient region gradually increases along the positive direction of the first direction. The heater is moved to the position in the processing chamber corresponding to the substrate, forming a constant temperature zone in the area where the substrate is located; The heater is moved to the other side of the processing chamber corresponding to the position of the substrate, forming a second temperature gradient region in the area where the substrate is located, and the temperature of the second temperature gradient region gradually increases in the negative direction of the first direction.

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