Electrostatic chuck and semiconductor apparatus

Abstract

This invention provides an electrostatic chuck and a semiconductor device. The electrostatic chuck includes an electrostatic adsorption module and a gas distribution module. The electrostatic adsorption module includes n adsorption areas, each with m helium gas outlets. The gas distribution module includes n gas distribution units corresponding to the n adsorption areas. The gas distribution module includes a helium gas pipeline, a pressure detection unit, a temperature detection unit, and a temperature control unit. The pressure detection unit acquires the helium pressure P in the adsorption area and determines whether the wafer has warped based on P, and identifies the warping location if warping occurs. The temperature detection unit acquires the temperature T at the wafer warping location. The temperature control unit adjusts the helium temperature in the helium gas pipeline according to T and a preset temperature range, ensuring that T is within the preset temperature range. This allows for more precise temperature control by using helium to assist in adjusting the wafer surface temperature.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to an electrostatic chuck and semiconductor equipment. Background Technology

[0002] In semiconductor processes (such as etching, thin film deposition, ion implantation, etc.), wafers are stably adsorbed on the surface of an electrostatic chuck, and their temperature is precisely controlled to ensure process uniformity and yield.

[0003] The electrostatic chuck 1 uses electrostatic force (Coulomb force or Johnson-Labesker force) to adsorb and fix the wafer. It typically integrates a high thermal conductivity helium (He) channel, using helium as a heat transfer medium, and ejects it from the helium outlet 101. Figure 1 As shown, the heat generated during the process can be quickly transferred to the cooling system on the back of the electrostatic chuck by the flow of helium gas through the tiny gap between the electrostatic chuck and the back of the wafer, thereby achieving precise control of the wafer temperature.

[0004] Traditional electrostatic chucks typically have helium gas channels that are either a single, integrated design or simply divided into several large areas, such as... Figure 1 The design, which divides the area into a circular first region 102 and an annular second region 103, has a significant drawback: Firstly, the thermal load varies significantly in different regions of the wafer (such as the center and the edge). For example, the edge is more prone to heat generation due to plasma bombardment. A uniform helium pressure will lead to uneven heat conduction. The edge may overheat due to insufficient helium flow, while the center may be affected by excessive cooling, which will affect the consistency of the process. Secondly, the temperature control of traditional electrostatic chucks relies on a single cooling circuit, which makes it difficult to compensate for local thermal load differences, resulting in uneven temperature distribution on the wafer surface (such as the edge temperature being higher than the center), which in turn leads to process defects (such as inconsistent etching rates, film thickness deviations, etc.).

[0005] Therefore, it is necessary to provide a new type of electrostatic chuck and semiconductor device to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0006] The purpose of this invention is to improve the uniformity of wafer surface temperature by adjusting the temperature of helium gas to achieve auxiliary regulation.

[0007] To achieve the above objectives, the electrostatic chuck of the present invention comprises: An electrostatic adsorption module includes n adsorption regions, each of which has m helium gas outlet holes, where n and m are natural numbers greater than or equal to 1; and, The gas preparation module includes n gas preparation units corresponding to n adsorption regions. Each gas preparation unit includes a helium pipe that runs through the electrostatic adsorption module and connects to the helium outlet in the corresponding adsorption region, a pressure detection unit embedded in the wall of any helium outlet in the corresponding adsorption region, a temperature detection unit embedded in the corresponding adsorption region, and a temperature control unit that is set in the electrostatic adsorption module and connected to the helium pipe. The pressure detection unit acquires the helium pressure P in the adsorption area, determines whether the wafer warps based on P, and identifies the warping location when warping occurs; the temperature detection unit acquires the temperature T at the wafer warping location, and the temperature control unit adjusts the helium temperature in the helium pipeline according to T and a preset temperature range, so that T is within the preset temperature range.

[0008] Optionally, the electrostatic adsorption module includes an electrostatic adsorption layer and a carrier base. The electrostatic adsorption layer is attached to the bearing surface of the carrier base. Several adsorption areas are located on the adsorption surface of the electrostatic adsorption layer, including circular adsorption areas and several interlocking annular areas. The annular areas include several fan-shaped adsorption areas.

[0009] Optionally, the central angles of the adsorption regions may be the same or different between two adjacent annular regions; If the central angles are the same, the radial dividing line of the adsorption region of one annular region is collinear with the radial dividing line of the adsorption region of the other annular region. If the central angles are different, the axis of symmetry and the radial dividing line of the adsorption region with the larger central angle are collinear with the radial dividing line of the adsorption region with the smaller central angle.

[0010] Optionally, within the same annular region, two adsorption regions located on two mutually perpendicular straight lines passing through the center of the circular adsorption region are grouped together. The electrostatic chuck further includes a first comparison unit, which is electrically connected to the pressure detection unit and is used to compare the helium pressure of two adsorption regions in the same group. When the difference between the helium pressure of the two adsorption regions in the same group is greater than a preset pressure threshold, it is determined that the wafer has warped, and the wafer position adsorbed by the adsorption region with lower helium pressure is the warped position.

[0011] Optionally, the electrostatic chuck further includes a second comparison unit, which is electrically connected to the temperature detection unit and the temperature control unit. The second comparison unit is used to determine whether the temperature of the adsorption area with low helium pressure is within a preset temperature range. If the temperature exceeds the preset temperature range, the corresponding temperature control unit is controlled to adjust the helium temperature in the corresponding helium pipe until the temperature of the adsorption area returns to the preset temperature range.

[0012] Optionally, the electrostatic chuck further includes a pressure regulating component connected to the helium gas pipeline. The electrostatic chuck also includes an initial control unit electrically connected to the pressure regulating component, used to control the pressure regulating component to adjust the helium pressure in the corresponding adsorption area, and to make the helium pressure gradually decrease from the edge of the electrostatic adsorption layer towards the center.

[0013] Optionally, the pressure regulating component includes a pressure control pipe, a first flow regulating component, and a second flow regulating component. One end of the pressure control pipe is connected to the helium pipe, and the other end of the pressure control pipe is connected to the helium recovery module and the helium supply module. The first flow regulating component is disposed on the helium pipe, and the connection position of the first flow regulating component and the helium pipe is located between the connection position of the helium pipe and the pressure control pipe and the connection position of the helium pipe and the helium outlet. The second flow regulating component is disposed on the pressure control pipe. When reducing the helium pressure in a certain adsorption region, the flow rate of the first flow regulator is reduced, the flow rate of the second flow regulator is increased, and the helium in the helium pipeline is diverted through the pressure control pipeline, and the difference between the flow rate reduced by the first flow regulator and the flow rate increased by the second flow regulator is within a preset flow rate range. When the helium pressure in a certain adsorption region is increased, the flow rate of the first flow regulator is increased, the flow rate of the second flow regulator is decreased, and the helium in the helium pipeline is increased through the pressure control pipeline. The difference between the increased flow rate of the first flow regulator and the decreased flow rate of the second flow regulator is within a preset flow rate range.

[0014] Optionally, the temperature control unit includes a semiconductor cooling element, a heating element, and a heat insulation layer; a first receiving hole is formed on the side of the electrostatic adsorption layer that is in contact with the bearing surface, and a second receiving hole is formed on the bearing surface; wherein, The semiconductor cooling element is disposed in the first receiving hole and surrounds the helium gas pipe; the heating element is disposed in the second receiving hole and surrounds the helium gas pipe; and the heat insulation layer is disposed between the semiconductor cooling element and the first receiving hole, between the heating element and the second receiving hole, and between the semiconductor cooling element and the heating element. or, The semiconductor cooling element is disposed in the second receiving hole and surrounds the helium gas pipe; the heating element is disposed in the first receiving hole and surrounds the helium gas pipe; and the heat insulation layer is disposed between the semiconductor cooling element and the second receiving hole, between the heating element and the first receiving hole, and between the semiconductor cooling element and the heating element.

[0015] Optionally, the electrostatic chuck further includes a cooling pipe embedded in the platform base, and the cooling pipe is filled with a cooling medium.

[0016] The present invention also provides a semiconductor device including the electrostatic chuck.

[0017] The beneficial effects of this invention are as follows: The electrostatic adsorption module includes several adsorption areas, each of which has a helium gas outlet. A helium gas pipeline passes through the electrostatic adsorption module and connects to the helium gas outlet in the corresponding adsorption area. A pressure detection unit is embedded in the wall of the helium gas outlet. Each adsorption area has a temperature detection unit embedded therein. The temperature control unit is located within the electrostatic adsorption module and connected to the helium gas pipeline. The pressure detection unit obtains the helium pressure in the adsorption area and determines whether the wafer has warped based on the helium pressure. If the wafer is determined to be warped, the warping position of the wafer is obtained. The temperature detection unit obtains the temperature at the warping position. The temperature control unit adjusts the helium temperature in the helium gas pipeline according to the temperature at the warping position and a preset temperature range. This allows for more precise temperature control by using helium to assist in adjusting the temperature of the wafer surface, avoiding uneven temperature distribution on the wafer surface caused by uniform temperature control, thereby reducing the generation of process defects. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of an electrostatic chuck in the prior art; Figure 2 This is a schematic diagram of the electrostatic chuck structure in some embodiments of the present invention; Figure 3 This is a schematic diagram of the internal structure of the electrostatic chuck in some embodiments of the present invention; Figure 4 This is a schematic diagram showing the distribution of adsorption regions in some embodiments of the present invention; Figure 5 This is a schematic diagram of the structure of the pressure regulating component in some embodiments of the present invention; Figure 6 for Figure 3 An enlarged schematic diagram of part A in the middle.

[0019] Explanation of reference numerals in the attached figures: 1. Electrostatic chuck; 101. Helium gas outlet; 102. First region; 103. Second region; 2. Electrostatic adsorption module; 21. First straight line; 22. Second straight line; 201. Electrostatic adsorption layer; 2011. First receiving hole; 2012. First adsorption region; 2013. First annular region; 2014. Second annular region; 2015. Third annular region; 202. Platform base; 2021. Second receiving hole; 3. Gas distribution module; 31. Helium gas pipeline; 32. Temperature detection unit; 33. Temperature control unit; 331. Semiconductor cooling component; 332. Heating component; 333. Insulation layer; 34. Pressure detection unit; 35. Pressure control pipeline; 36. First flow regulator; 37. Second flow regulator; 4. Control module. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0021] To overcome the problems existing in the prior art, embodiments of the present invention provide an electrostatic chuck. (Refer to...) Figure 2 and Figure 3The electrostatic chuck includes an electrostatic adsorption module 2 and a gas distribution module 3. The electrostatic adsorption module 2 includes n adsorption areas, each with m helium gas outlets 101, where n and m are natural numbers greater than or equal to 1. The gas distribution module 3 includes n gas distribution units corresponding to the n adsorption areas. Each gas distribution unit includes a helium pipe 31 that passes through the electrostatic adsorption module 2 and connects to the helium gas outlets 101 in the corresponding adsorption area; a pressure detection unit 34 embedded in the wall of any helium gas outlet 101 in the corresponding adsorption area; a temperature detection unit 32 embedded in the corresponding adsorption area; and a temperature control unit 33 located within the electrostatic adsorption module 2 and connected to the helium pipe 31. Specifically, the pressure detection unit 34 acquires the helium pressure P in the adsorption area, determines whether the wafer has warped based on P, and identifies the warping location if warping occurs. The temperature detection unit 32 acquires the temperature T at the wafer warping location, and the temperature control unit 33 adjusts the helium temperature in the helium pipe according to T and a preset temperature range, ensuring that T is within the preset temperature range.

[0022] In this application, by adopting an overall structure combining an electrostatic adsorption module and a gas distribution module, and utilizing zoned helium pipelines, pressure detection units, and temperature detection units, the helium pressure and temperature information of each adsorption area can be collected in real time. This allows for accurate determination of the wafer's warpage state and location. Based on the warpage location and the corresponding area temperature, the temperature control unit can target and adjust the helium temperature in the corresponding helium pipeline. This enables accurate detection and active correction of wafer warpage, effectively ensuring uniform wafer temperature field and adsorption flatness, and improving the processing accuracy and product yield of semiconductor processes.

[0023] In some embodiments, reference is made to Figure 2 The electrostatic chuck also includes a control module 4, which is electrically connected to the pressure detection unit 34, the temperature detection unit 32, and the temperature control unit 33. The control module 4 is used to drive the pressure detection unit 34 to obtain the helium pressure P in the adsorption area, and then determine whether the wafer has warped based on P, and determine the warping position when warping occurs; it is also used to drive the temperature detection unit 32 to obtain the temperature T at the wafer warping position, and then drive the temperature control unit 33 to adjust the helium temperature in the helium pipeline according to T and a preset temperature range, so that T is within the preset temperature range.

[0024] In some embodiments, the pressure detection unit is disposed close to the adsorption surface of the electrostatic adsorption layer, and the pressure detection unit is a high-temperature resistant pressure sensor, such as a high-temperature piezoelectric pressure sensor, and the temperature detection unit is a temperature sensor.

[0025] In some embodiments, the electrostatic adsorption module includes an electrostatic adsorption layer and a stage base. The electrostatic adsorption layer is attached to the bearing surface of the stage base. Several adsorption areas are located on the adsorption surface of the electrostatic adsorption layer, including circular adsorption areas and several nested annular areas. The annular areas include several fan-shaped adsorption areas. Since wafers are typically circular, a radial partitioning method using multiple nested (i.e., concentric) annular areas with a central circular adsorption area is adopted, which highly matches the wafer's geometry. This achieves fine-grained radial partitioning, allowing for the separate detection of pressure and temperature at the center, center diameter, and edges. Because the probability of wafer edge warping is much greater than that of center warping, radial partitioning can accurately locate which annular area warps. Combined with the fan-shaped annular adsorption areas, the location of warping can be precisely determined.

[0026] In some embodiments, the central angles of the adsorption regions are the same or different between two adjacent annular regions; if the central angles are the same, the radial dividing line of the adsorption region of one annular region is collinear with the radial dividing line of the adsorption region of the other annular region; if the central angles are different, the axis of symmetry and the radial dividing line of the adsorption region with the larger central angle are both collinear with the radial dividing line of the adsorption region with the smaller central angle. When the central angles of the adsorption regions of two adjacent annular regions are the same, arranging their radial dividing lines collinearly ensures that the adsorption regions are distributed in a regular radial pattern on the electrostatic adsorption layer. This facilitates the placement of helium gas outlets, temperature detection units, and temperature control units, simplifying the processing and assembly process. Simultaneously, it ensures uniform distribution of pressure and temperature detection points in the radial and circumferential directions of the wafer, improving the consistency of wafer condition detection. When the central angles of the adsorption regions of two adjacent annular regions are different, setting the axis of symmetry and radial dividing line of the adsorption region with the larger central angle collinear with the radial dividing line of the adsorption region with the smaller central angle allows for differentiated partition densities at different radial positions. This balances the detection and control accuracy requirements of the wafer's central and edge regions, avoiding redundant or missing detection points, further improving the accuracy of determining the wafer's warp location and degree, and enabling refined and differentiated temperature and pressure control of different regions of the wafer.

[0027] In some embodiments, reference is made to Figure 2 and Figure 3 The temperature control unit 33 is disposed between the stage base 202 and the electrostatic adsorption layer 201, and is partially embedded in the stage base 202 and partially embedded in the electrostatic adsorption layer 201, and is in contact with the corresponding helium pipe 31.

[0028] In some embodiments, reference is made to Figure 4The adsorption region includes a first circular adsorption region 2012 and three interconnected annular regions 2013, 2014, and 2015. The first annular region 2013 includes four fan-shaped adsorption regions: X, Y, Z, and V. The second annular region 2014 includes 15 fan-shaped adsorption regions: A, B, C, D, E, F, G, H, I, J, K, L, M, O, and P. The third annular region 2015 includes 15 fan-shaped adsorption regions: a, b, c, d, e, f, g, h, i, j, k, l, m, o, and p. Among them, the central angle of adsorption region 'a' is the same as that of adsorption region 'A', while the central angle of adsorption region 'A' is different from that of adsorption region 'Z'. That is, n is 34, and there are a total of 34 adsorption regions.

[0029] In some embodiments, within the same annular region, two adsorption regions located on two mutually perpendicular straight lines passing through the center of the circular adsorption region are grouped together. The electrostatic chuck further includes a first comparison unit electrically connected to the pressure detection unit, used to compare the helium pressure of two adsorption regions within the same group. When the difference in helium pressure between the two adsorption regions within the same group is greater than a preset pressure threshold, it is determined that the wafer has warped, and the wafer position adsorbed by the adsorption region with the lower helium pressure is the warped position. It should be noted that the two mutually perpendicular straight lines do not actually exist in the device; their main function is to indicate which two adsorption regions are grouped together, and these two mutually perpendicular straight lines can be in any position or direction. It can accurately determine whether a wafer has warped by utilizing the pressure difference caused by the change in helium gap in the corresponding area when the wafer warps. The differences between adjacent positions in the circumferential direction of the wafer are relatively small. Using mutually perpendicular straight lines as the grouping benchmark can amplify the differences as much as possible and avoid interference from small differences in adjacent positions, thereby improving the accuracy and reliability of warping judgment. At the same time, it can directly locate the specific warping position of the wafer based on the adsorption area with lower helium pressure in the same group. This provides accurate data support for subsequent targeted zone temperature adjustment and pressure correction, enabling rapid identification and location of wafer warping and ensuring the flatness of wafer adsorption and processing precision.

[0030] In some embodiments, m is 20, 25, 30, 35, or 40, etc.

[0031] In some embodiments, the electrostatic chuck further includes a second comparison unit electrically connected to the temperature detection unit and the temperature control unit. This second comparison unit determines whether the temperature of the adsorption region with lower helium pressure is within a preset temperature range. If the temperature exceeds the preset temperature range, the corresponding temperature control unit adjusts the helium temperature in the corresponding helium pipe until the temperature of the adsorption region returns to the preset temperature range. By setting up the second comparison unit and linking it with the temperature detection unit and the temperature control unit, closed-loop monitoring and precise control of the temperature of the warped region can be further achieved after determining the wafer warpage location. The second comparison unit compares the real-time temperature of the warped adsorption region with the preset temperature range. When the temperature exceeds the preset temperature range, it drives the corresponding temperature control unit to adjust the helium temperature in the corresponding helium pipe until the temperature of the adsorption region returns to the preset temperature range, thereby effectively eliminating thermal stress caused by localized temperature anomalies and suppressing and correcting wafer warpage deformation. This setting enables targeted temperature adjustment at warped points, avoiding temperature interference to other normal areas, improving the accuracy and response speed of temperature control, ensuring a uniform and stable temperature field on the wafer, and enhancing the flatness and process yield during wafer fabrication.

[0032] In some embodiments, the preset pressure threshold is 0.5-1 Torr, while the preset temperature range is determined by the specific process. For example, in some deposition processes, the preset temperature range is 24.5~25.5°C.

[0033] In some embodiments, reference is made to Figure 4 Taking the first straight line 21 and the second straight line 22 as examples, the first straight line 21 and the second straight line 22 are perpendicular to each other. The first straight line 21 passes through the m-adsorption region, and the second straight line 22 passes through the i-adsorption region. The detected helium pressure in the m-adsorption region is 20 Torr, and the detected helium pressure in the i-adsorption region is 18 Torr. The difference between the helium pressure in the m-adsorption region and the helium pressure in the i-adsorption region is 2 Torr. Taking the preset pressure threshold of 1 Torr as an example, if 2 Torr is greater than 1 Torr, it is determined that the wafer has warped, and the warped location is the m-adsorption region. The detected temperature of the m-adsorption region is 27°C. Taking the preset temperature range of 24.5~25.5°C as an example, if 27°C exceeds the preset temperature range, the temperature control unit corresponding to the m-adsorption region continuously reduces the helium temperature in the helium pipeline until the temperature of the m-adsorption region returns to within the 24.5~25.5°C range.

[0034] In some embodiments, the electrostatic chuck further includes a pressure regulating component disposed outside the electrostatic adsorption module, the pressure regulating component being connected to the helium gas pipeline. The electrostatic chuck also includes an initial control unit connected to the pressure regulating component, used to control the pressure regulating component to adjust the helium pressure within the corresponding adsorption area, and to gradually decrease the helium pressure from the edge of the electrostatic adsorption layer towards the center. (Refer to...) Figure 4 For example, the helium pressure in adsorption region a is 20 Torr, the helium pressure in adsorption region A is 19.5 Torr, the helium pressure in adsorption region Z is 19 Torr, and the helium pressure in the first adsorption region 2012 is 18.5 Torr. By connecting the pressure regulator to the helium pipeline and controlling the pressure regulator using the initial control unit, the helium pressure in each adsorption region gradually decreases from the edge of the electrostatic adsorption layer to the center, thus forming a gradient back pressure distribution in the initial stage of wafer adsorption. The higher back pressure in the edge region enhances the adsorption and adhesion effect at the wafer edge, effectively suppresses wafer edge warping, and increases the cooling intensity relative to the center; the relatively lower back pressure in the center region avoids deformation or stress concentration and overcooling at the center due to excessive pressure.

[0035] In some embodiments, reference is made to Figure 5 The pressure regulating component includes a pressure control pipe 35, a first flow regulating component 36, and a second flow regulating component 37. One end of the pressure control pipe 35 is connected to the helium pipe 31, and the other end of the pressure control pipe 35 is connected to the helium recovery module and the helium supply module. The helium recovery module and the helium supply module do not operate simultaneously. The first flow regulating component 36 is disposed on the helium pipe 31, and the connection position of the first flow regulating component 36 and the helium pipe 31 is located between the connection position of the helium pipe 31 and the pressure control pipe 35 and the connection position of the helium pipe 31 and the helium outlet. The second flow regulating component 37 is disposed on the pressure control pipe 35.

[0036] When reducing the helium pressure in a certain adsorption region, the flow rate of the first flow regulator is reduced, the flow rate of the second flow regulator is increased, and the helium in the helium pipeline is diverted through the pressure control pipe. The difference between the reduced flow rate of the first flow regulator and the increased flow rate of the second flow regulator is within a preset flow rate range. Conversely, when increasing the helium pressure in a certain adsorption region, the flow rate of the first flow regulator is increased, the flow rate of the second flow regulator is reduced, and the helium in the helium pipeline is increased through the pressure control pipe. The difference between the increased flow rate of the first flow regulator and the reduced flow rate of the second flow regulator is within a preset flow rate range. Specifically, the preset flow rate range is 1-2 sccm.

[0037] A pressure regulating device structure consisting of a pressure-controlled pipeline, a first flow regulator, and a second flow regulator is employed. The pressure-controlled pipeline is connected to a helium pipeline, a helium recovery module, and a helium supply module, enabling precise and rapid adjustment of helium pressure. When reducing helium pressure, the first and second flow regulators are coordinated to divert helium from the helium pipeline via the pressure-controlled pipeline. Since the difference between the flow rate reduction by the first flow regulator and the flow rate increase by the second flow regulator is within a preset flow rate range, and when increasing helium pressure, helium is replenished to the helium pipeline via the pressure-controlled pipeline, with the difference between the flow rate increase by the first flow regulator and the flow rate reduction by the second flow regulator remaining within a preset flow rate range, the impact of helium pressure regulation in one adsorption region on the helium flow rate in other adsorption regions can be minimized. This avoids helium pressure fluctuations in other adsorption regions and improves pressure regulation accuracy.

[0038] In some embodiments, the first flow regulator and the second flow regulator are both flow regulating valves, the helium recovery module can be a tank that can regulate flow and has a low-pressure space, or it can be a vacuum pump, and the helium supply module can be a tank that can regulate flow and store helium.

[0039] In some embodiments, reference is made to Figure 3 and Figure 6 The temperature control unit 33 includes a semiconductor cooling element 331, a heating element 332 and a heat insulation layer 333. The electrostatic adsorption layer 201 has a first receiving hole 2011 on one side of the bearing surface, and a second receiving hole 2021 is provided on the bearing surface.

[0040] In some embodiments, reference is made to Figure 6The semiconductor cooling element 331 is disposed within the first receiving hole 2011 and surrounds the helium pipe 31. The heating element 332 is disposed within the second receiving hole 2021 and surrounds the helium pipe 31. The heat insulation layer 333 is disposed between the semiconductor cooling element 331 and the first receiving hole 2011, between the heating element 332 and the second receiving hole 2021, and between the semiconductor cooling element 331 and the heating element 332. By configuring the temperature control unit 33 as a structure combining the semiconductor cooling element 331, the heating element 332, and the heat insulation layer 333, and by respectively opening the first receiving hole 2011 and the second receiving hole 2021 in the electrostatic adsorption layer 201 and the platform base, and arranging the semiconductor cooling element 331 and the heating element 332 around the helium pipe 31, bidirectional precise adjustment of the helium temperature can be achieved. The semiconductor cooling element 331 and heating element 332 are arranged around the helium gas pipe 31, increasing the heat exchange contact area and improving the heating or cooling efficiency of the helium gas in the helium gas pipe 31, ensuring rapid temperature regulation response. Simultaneously, heat insulation layers 333 are provided between the semiconductor cooling element 331, the heating element 332 and their corresponding receiving holes, as well as between the two, effectively blocking heat interference between the cooling and heating functions, preventing cross-heating that could lead to a decrease in temperature control accuracy, and ensuring the independence and accuracy of temperature regulation in local areas. This structure has a compact and reasonable layout, high heat exchange efficiency, and good temperature control stability, accurately maintaining the helium temperature within the preset temperature range, thereby ensuring a uniform wafer temperature field, effectively correcting wafer warpage, and improving semiconductor processing accuracy and product yield.

[0041] In other embodiments, the semiconductor cooling element is disposed within the second receiving hole and surrounds the helium gas pipe, the heating element is disposed within the first receiving hole and surrounds the helium gas pipe, and the heat insulation layer is disposed between the semiconductor cooling element and the second receiving hole, between the heating element and the first receiving hole, and between the semiconductor cooling element and the heating element.

[0042] In some embodiments, the semiconductor cooling device includes a thermoelectric cooler, and the heating device includes a heating resistance wire. By adjusting the power of the thermoelectric cooler and the heating resistance wire, the temperature control unit can regulate the temperature of the helium gas. For example, if the power of the thermoelectric cooler increases, the temperature of the helium gas decreases; if the power of the heating resistance wire increases, the temperature of the helium gas increases.

[0043] In some embodiments, the electrostatic chuck further includes cooling pipes embedded within the stage base, and the cooling pipes are filled with a cooling medium. Specifically, the cooling pipes are connected to an external cooling system, which can be a water chiller, thermoelectric cooler, etc. By embedding cooling pipes inside the stage base and filling them with a cooling medium, the generated heat can be quickly dissipated, preventing localized overheating of the stage base and uneven temperature rise that could lead to wafer structural deformation and thermal stress problems. The embedded pipe layout conforms to the stage structure, does not occupy additional assembly space, and can stably maintain the reference temperature of the stage base.

[0044] The present invention also provides a semiconductor device, including the electrostatic chuck. The semiconductor device includes etching equipment, deposition equipment, etc.

[0045] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An electrostatic chuck, characterized in that, include: An electrostatic adsorption module includes n adsorption regions, each of which has m helium gas outlet holes, where n and m are natural numbers greater than or equal to 1; and, The gas preparation module includes n gas preparation units corresponding to n adsorption regions. Each gas preparation unit includes a helium pipe that runs through the electrostatic adsorption module and connects to the helium outlet in the corresponding adsorption region, a pressure detection unit embedded in the wall of any helium outlet in the corresponding adsorption region, a temperature detection unit embedded in the corresponding adsorption region, and a temperature control unit that is set in the electrostatic adsorption module and connected to the helium pipe. The pressure detection unit acquires the helium pressure P in the adsorption area, determines whether the wafer warps based on P, and identifies the warping location when warping occurs; the temperature detection unit acquires the temperature T at the wafer warping location, and the temperature control unit adjusts the helium temperature in the helium pipeline according to T and a preset temperature range, so that T is within the preset temperature range.

2. The electrostatic chuck according to claim 1, characterized in that, The electrostatic adsorption module includes an electrostatic adsorption layer and a carrier base. The electrostatic adsorption layer is attached to the bearing surface of the carrier base. Several adsorption areas are located on the adsorption surface of the electrostatic adsorption layer, including circular adsorption areas and several interlocking annular areas. The annular areas include several fan-shaped adsorption areas.

3. The electrostatic chuck according to claim 2, characterized in that, Between two adjacent annular regions, the central angles of the adsorption regions may be the same or different; If the central angles are the same, the radial dividing line of the adsorption region of one annular region is collinear with the radial dividing line of the adsorption region of the other annular region. If the central angles are different, the axis of symmetry and the radial dividing line of the adsorption region with the larger central angle are collinear with the radial dividing line of the adsorption region with the smaller central angle.

4. The electrostatic chuck according to claim 2 or 3, characterized in that, Within the same annular region, two adsorption regions located on two mutually perpendicular straight lines passing through the center of the circular adsorption region are considered as a group. The electrostatic chuck further includes a first comparison unit, which is electrically connected to the pressure detection unit and is used to compare the helium pressure of two adsorption regions in the same group. When the difference between the helium pressure of the two adsorption regions in the same group is greater than a preset pressure threshold, it is determined that the wafer has warped, and the wafer position adsorbed by the adsorption region with lower helium pressure is the warped position.

5. The electrostatic chuck according to claim 4, characterized in that, The electrostatic chuck also includes a second comparison unit, which is electrically connected to the temperature detection unit and the temperature control unit. The second comparison unit is used to determine whether the temperature of the adsorption area with low helium pressure is within the preset temperature range. If the temperature exceeds the preset temperature range, the corresponding temperature control unit is controlled to adjust the helium temperature in the corresponding helium pipe until the temperature of the adsorption area returns to the preset temperature range.

6. The electrostatic chuck according to claim 2, characterized in that, The electrostatic chuck further includes a pressure regulating component connected to the helium gas pipeline. The electrostatic chuck also includes an initial control unit electrically connected to the pressure regulating component, which is used to control the pressure regulating component to adjust the helium pressure in the corresponding adsorption area and to make the helium pressure gradually decrease from the edge of the electrostatic adsorption layer towards the center.

7. The electrostatic chuck according to claim 6, characterized in that, The pressure regulating component includes a pressure control pipe, a first flow regulating component, and a second flow regulating component. One end of the pressure control pipe is connected to the helium pipe, and the other end of the pressure control pipe is connected to the helium recovery module and the helium supply module. The first flow regulating component is disposed on the helium pipe, and the connection position of the first flow regulating component and the helium pipe is located between the connection position of the helium pipe and the pressure control pipe and the connection position of the helium pipe and the helium outlet. The second flow regulating component is disposed on the pressure control pipe. When reducing the helium pressure in a certain adsorption region, the flow rate of the first flow regulator is reduced, the flow rate of the second flow regulator is increased, and the helium in the helium pipeline is diverted through the pressure control pipeline, and the difference between the flow rate reduced by the first flow regulator and the flow rate increased by the second flow regulator is within a preset flow rate range. When increasing the helium pressure in a certain adsorption region, the flow rate of the first flow regulator is increased, the flow rate of the second flow regulator is decreased, and the helium in the helium pipeline is increased through the pressure control pipeline, and the difference between the increased flow rate of the first flow regulator and the decreased flow rate of the second flow regulator is within a preset flow rate range.

8. The electrostatic chuck according to claim 2, characterized in that, The temperature control unit includes a semiconductor cooling element, a heating element, and a heat insulation layer. A first receiving hole is formed on one side of the electrostatic adsorption layer that contacts the bearing surface, and a second receiving hole is formed on the bearing surface. The semiconductor cooling element is disposed in the first receiving hole and surrounds the helium gas pipe; the heating element is disposed in the second receiving hole and surrounds the helium gas pipe; and the heat insulation layer is disposed between the semiconductor cooling element and the first receiving hole, between the heating element and the second receiving hole, and between the semiconductor cooling element and the heating element. or, The semiconductor cooling element is disposed in the second receiving hole and surrounds the helium gas pipe; the heating element is disposed in the first receiving hole and surrounds the helium gas pipe; and the heat insulation layer is disposed between the semiconductor cooling element and the second receiving hole, between the heating element and the first receiving hole, and between the semiconductor cooling element and the heating element.

9. The electrostatic chuck according to claim 2, characterized in that, The electrostatic chuck also includes a cooling pipe, which is embedded in the platform base and filled with a cooling medium.

10. A semiconductor device, characterized in that, Includes the electrostatic chuck as described in any one of claims 1 to 9.

Images