Semiconductor device and method of forming the same

By selectively forming barrier and adhesive layers on the bottom layer of the interconnect structure, combined with low dielectric constant dielectric plugs, the problem of poor gap filling performance in metallized structures is solved, achieving low contact resistance and high structural integrity, and improving the reliability of the interconnect layer.

CN122138684APending Publication Date: 2026-06-02TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2025-08-04
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

As the size of integrated circuit devices decreases, the size and spacing between metallization structures in the interconnect layer also decrease, leading to a reduction in the gap-filling performance of the bottom layer of the metallization structure. This can result in voids and discontinuities, increasing contact resistance and causing electrical disconnection.

Method used

Barrier and adhesive layers are selectively formed on the bottom layer of the interconnect structure. Self-assembled monolayer films and amorphous adhesive layers are used in combination with low dielectric constant dielectric plugs to form the bottom layer of the metallized structure to reduce contact resistance. A seamless metallized structure is formed by bottom-up deposition technology.

Benefits of technology

This achieves low contact resistance and higher structural integrity, reduces electrical isolation between the bottom layers of the metallized structure, and improves the reliability and performance of the interconnect layers.

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Abstract

Semiconductor devices and methods of forming the same are disclosed. A layer of conductive material is formed over a bottommost layer of interconnect structures in an interconnect layer of a semiconductor device, and the layer of conductive material is etched to define a bottommost layer of metallization structures from the layer of conductive material. To reduce contact resistance between the bottommost layer of interconnect structures and the bottommost layer of metallization structures in the interconnect layer, an adhesion layer can be formed in a selective manner such that the adhesion layer is formed only on an underlying dielectric layer and not on the bottommost layer of interconnect structures. Selective deposition of the adhesion layer can be achieved using a barrier layer that is selectively formed on the bottommost layer of interconnect structures.
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