SoP packaging structure and preparation method thereof

Abstract

The application provides a SoP packaging structure and a preparation method thereof. Based on the settings of a TGV metal column, a TSV composite adapter plate and a rewiring layer, a high-density integrated composite adapter plate can be prepared. After the first chip and the second chip are combined, a high-density SoP packaging structure can be formed. After a cutting process, multiple computing power modules can be accommodated in one SoP packaging monomer structure, meeting the needs of small size, high integration and high economic efficiency. Furthermore, based on the groove and the TGV groove, a metal heat dissipation layer covering the TSV composite adapter plate can be formed while the TGV metal column is prepared, which can reduce the process flow, reduce the cost, achieve good heat dissipation and improve the product quality.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology and relates to a SoP packaging structure and its preparation method. Background Technology

[0002] Driven by the ever-increasing integration density of various electronic components (such as transistors, diodes, resistors, and capacitors), the semiconductor industry has experienced rapid growth. As the performance requirements of high-speed AI products become increasingly demanding, chip performance becomes increasingly crucial, and advanced 2.5D packaging will lead to larger and larger package sizes as chip performance improves.

[0003] The fabrication of existing 2.5D packaging structures typically involves first fabricating 2.5D package monomers, and then bonding them to a substrate via flip-chip (FC) for electrical connection. However, traditional 2.5D packaging faces process challenges when dealing with ultra-large package structures. For example, the current 2.5D package structure (2×SoC+4×HBM) has a substrate size of approximately 90×90mm. To meet the demands of high computing power, the package size will continue to increase, with future substrate sizes reaching 100-150mm. For a 300×300mm wafer, only two package structures can be accommodated on a single wafer, resulting in low economic efficiency.

[0004] Therefore, it is necessary to provide a SoP (System on Panel) packaging structure and its fabrication method. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a SoP packaging structure and its preparation method to solve the problem of low economic efficiency of the existing 2.5D packaging structure.

[0006] To achieve the above and other related objectives, the present invention provides a method for fabricating a SoP packaging structure, comprising the following steps:

[0007] A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other;

[0008] The glass substrate is patterned to form grooves and TGV channels in the glass substrate;

[0009] A TSV composite adapter board is provided and the TSV composite adapter board is bonded to the groove, wherein the TSV composite adapter board includes a TSV adapter board and a first redistribution layer and a second redistribution layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively;

[0010] A protective layer is formed on the first surface of the glass substrate, the protective layer covering the TGV groove, the recess and the TSV composite adapter plate;

[0011] A metal layer is formed on the protective layer, and the metal layer fills the TGV groove and the recess;

[0012] A grinding process is performed to expose the first surface of the glass substrate and the first redistribution layer, forming TGV metal pillars and a metal heat dissipation layer located around the TSV composite adapter board. The TGV metal pillars include a first end and a second end that are disposed opposite to each other.

[0013] A third redistribution layer is formed on the first surface of the glass substrate. The third redistribution layer is electrically connected to the first end of the TGV metal pillar and is also electrically connected to the first redistribution layer.

[0014] Thinning the glass substrate from its second side exposes the second end of the TGV metal pillar and the second redistribution layer.

[0015] A fourth redistribution layer is formed on the second surface of the glass substrate. The fourth redistribution layer is electrically connected to the second end of the TGV metal pillar and is also electrically connected to the second redistribution layer.

[0016] A first chip and a second chip are provided, and the first chip and the second chip are bonded to the third redistribution layer by an inverted bonding method. The first chip and the second chip are both electrically connected to the third redistribution layer, and the first chip and the second chip are both located on the TSV composite adapter board and are both electrically connected to the TSV composite adapter board.

[0017] Metal bumps are formed on the surface of the fourth redistribution layer, and the metal bumps are electrically connected to the fourth redistribution layer.

[0018] The cutting process is performed to form a SoP (Sort of Package) single-unit structure.

[0019] Optionally, the method for forming the groove in the glass substrate includes mechanical cutting; the method for forming the TGV groove in the glass substrate includes laser cutting.

[0020] Optionally, the protective layer includes one or a combination of a Ti protective layer and a Ta protective layer formed by a deposition process.

[0021] Optionally, before performing the dicing process, the method further includes a step of forming a rigid reinforcement on the third redistribution layer, wherein the rigid reinforcement is located on the periphery of the first chip and the second chip; the rigid reinforcement includes a metal rigid reinforcement or a semiconductor rigid reinforcement.

[0022] Optionally, the method further includes the step of forming a bottom fill layer, which fills the gap between the first chip and the third redistribution layer and the gap between the second chip and the third redistribution layer.

[0023] Optionally, the glass substrate has a size of 100-600 mm; the SoP package unit structure includes a 1×SoC+4×HBM package unit structure; and the shape of the SoP package unit structure includes a circle, an ellipse, or a polygon.

[0024] The present invention also provides a SoP packaging structure, the SoP packaging structure comprising:

[0025] A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other;

[0026] TGV groove, the TGV groove penetrating the glass substrate;

[0027] A groove that penetrates the glass substrate;

[0028] A TGV metal column, which fills the TGV groove, includes a first end and a second end disposed opposite to each other;

[0029] TSV composite adapter board, the TSV composite adapter board is bonded in the groove, including TSV adapter board and a first redistribution layer and a second redistribution layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively;

[0030] A metal heat dissipation layer is located in the groove and on the periphery of the TSV composite adapter plate;

[0031] A protective layer is located within the groove and the TGV slot, and covers the sidewalls of the TGV metal pillar and the metal heat dissipation layer.

[0032] The third redistribution layer is located on the first surface of the glass substrate, electrically connected to the first end of the TGV metal pillar, and electrically connected to the first redistribution layer.

[0033] A fourth redistribution layer is located on the second surface of the glass substrate, electrically connected to the second end of the TGV metal pillar, and electrically connected to the second redistribution layer.

[0034] The first chip and the second chip are both inverted and bonded to the third redistribution layer and electrically connected to the third redistribution layer. The first chip and the second chip are both located above the TSV composite adapter board and are electrically connected to the TSV composite adapter board.

[0035] A metal bump is located on the surface of the fourth redistribution layer and is electrically connected to the fourth redistribution layer.

[0036] Optionally, the protective layer includes one or a combination of a Ti protective layer and a Ta protective layer.

[0037] Optionally, it further includes a rigid reinforcement located on the third redistribution layer and surrounding the first chip and the second chip, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; and a bottom fill layer filling the gap between the first chip and the third redistribution layer and filling the gap between the second chip and the third redistribution layer.

[0038] Optionally, the size of the glass substrate includes 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; the shape of the SoP packaging structure includes circular, elliptical, or polygonal.

[0039] As described above, the SoP packaging structure and its fabrication method of the present invention, based on the arrangement of TGV metal pillars, TSV composite adapter boards, and redistribution layers, can fabricate high-density integrated composite adapter boards. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. Moreover, after the cutting process, multiple computing modules can be accommodated in a single SoP packaging unit structure, meeting the requirements of small packaging size, high integration, and high economic efficiency. Furthermore, based on the grooves and TGV grooves, a metal heat dissipation layer covering the TSV composite adapter board is formed simultaneously with the fabrication of the TGV metal pillars, which can reduce the number of process steps, lower costs, achieve good heat dissipation, and improve product quality. Attached Figure Description

[0040] Figure 1 The diagram shows a schematic of the fabrication process of the SoP packaging structure in an embodiment of the present invention.

[0041] Figure 2 The diagram shown is a top view of the glass substrate in an embodiment of the present invention.

[0042] Figure 3 This is a schematic diagram of a structure formed in a glass substrate after forming grooves and TGV channels in an embodiment of the present invention.

[0043] Figure 4This is a schematic diagram of another structure formed in the glass substrate after forming grooves and TGV channels in an embodiment of the present invention.

[0044] Figure 5 The diagram shown is a structural schematic of the TSV composite adapter plate in an embodiment of the present invention.

[0045] Figure 6 The diagram shows the structure of the TSV composite adapter plate after it has been bonded in the groove in an embodiment of the present invention.

[0046] Figure 7 The diagram shown is a schematic representation of the structure after the protective layer is formed in an embodiment of the present invention.

[0047] Figure 8 The diagram shown is a schematic representation of the structure after the metal layer is formed in an embodiment of the present invention.

[0048] Figure 9 The diagram shows the structure after the grinding process is performed to form the TGV metal pillar and the metal heat dissipation layer in an embodiment of the present invention.

[0049] Figure 10 The diagram shown is a schematic representation of the structure after the formation of the third redistribution layer in an embodiment of the present invention.

[0050] Figure 11 The diagram shown is a schematic representation of the structure of the glass substrate after thinning in an embodiment of the present invention.

[0051] Figure 12 The diagram shown is a schematic representation of the structure after the fourth redistribution layer is formed in an embodiment of the present invention.

[0052] Figure 13 The diagram shows the structure after bonding the first chip and the second chip in an embodiment of the present invention.

[0053] Figure 14 The diagram shown is a structural schematic of the metal bumps formed in an embodiment of the present invention.

[0054] Figure 15 The diagram shown is a top view of the SoP packaging structure formed before the cutting process in an embodiment of the present invention.

[0055] Figure 16 The diagram shown is a top view of the SoP (Sort of Package) unit structure formed after the cutting process in an embodiment of the present invention.

[0056] Figure 17 The diagram shows the morphological structure of the SoP packaging unit structure formed after the cutting process in an embodiment of the present invention.

[0057] Figure 18 The diagram shown is a structural schematic of the rigid reinforcement member formed in an embodiment of the present invention.

[0058] Figure 19 The diagram shown is a top view of the SoP packaging structure with rigid reinforcement formed in an embodiment of the present invention.

[0059] Explanation of reference numerals in the attached figures

[0060] 100 glass substrate

[0061] 101 TGV tank

[0062] 102 Grooves

[0063] 200 TSV Composite Adapter Board

[0064] 201 silicon layer

[0065] 202 TSV metal pillar

[0066] 210 First Rerouting Layer

[0067] 220 Second Rerouting Layer

[0068] 230 Third Rerouting Layer

[0069] 240 Fourth Rerouting Layer

[0070] 300 adhesive layer

[0071] 400 protective layer

[0072] 500 metal layers

[0073] 501 TGV Metal Column

[0074] 502 Metal Heat Dissipation Layer

[0075] 610 First Chip

[0076] 620 Second Chip

[0077] 700 bottom fill layer

[0078] 800 metal bumps

[0079] 900 rigid reinforcement Detailed Implementation

[0080] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0081] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0082] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include orientations of the device in use or operation other than those depicted in the drawings, and may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact. Furthermore, when a layer is referred to as “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0083] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0084] like Figure 1 This embodiment provides a method for fabricating a SoP (Sort of Planes) packaging structure. Based on the configuration of TGV metal pillars, TSV composite adapter boards, and redistribution layers, a high-density integrated composite adapter board can be fabricated. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. After the cutting process, multiple computing modules can be accommodated in a single SoP package unit structure, meeting the requirements of small package size, high integration, and high cost-effectiveness. Furthermore, based on the grooves and TGV slots, a metal heat dissipation layer covering the TSV composite adapter board is formed simultaneously with the fabrication of the TGV metal pillars, which can reduce the number of process steps, lower costs, achieve good heat dissipation, and improve product quality.

[0085] The following is in conjunction with the appendix Figures 2 to 19 The fabrication of the SoP packaging structure is further described below.

[0086] First, refer to Figure 1 and Figure 2 Step S1 is executed, providing a glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other.

[0087] As an example, the size of the glass substrate 100 may include 100 to 600 mm.

[0088] Specifically, the size of the glass substrate 100 may include, for example, 100-600 mm, and the shape of the glass substrate 100 may include, for example, a square, a rectangle, a circle, etc. In this embodiment, refer to... Figure 2 The glass substrate 100 is square and its size is 600×600mm. However, the size of the glass substrate 100 is not limited to this. For example, it may include 100×100mm, 200×200mm, 300×300mm, 500×500mm, etc. The shape of the glass substrate 100 is not limited to square. It may also be rectangular or circular, etc.

[0089] Next, refer to Figure 1 , Figure 3 and Figure 4 Step S2 is executed to pattern the glass substrate 100, forming grooves 102 and TGV grooves 101 in the glass substrate 100.

[0090] As an example, the method of forming the groove 102 in the glass substrate 100 may include mechanical cutting; the method of forming the TGV groove 101 in the glass substrate 100 may include laser cutting.

[0091] Specifically, when forming the groove 102 using a mechanical cutting method, the morphology of the groove 102 can be adjusted according to the type of grinding wheel selected in the mechanical cutting process or the control of mechanical process parameters, such as... Figure 3 and Figure 4 The diagram illustrates the morphology of the groove 102 with right angles and rounded corners. When the groove 102 with rounded corners is used, it facilitates the filling of subsequent materials, reduces stress, and decreases the occurrence of cracks. In this embodiment, the groove 102 is preferably shaped with rounded corners.

[0092] The procedure for preparing the TGV groove 101 using the laser method is not limited here. The size, morphology, and distribution of the TGV groove 101 and the groove 102 are not excessively restricted here.

[0093] Next, refer to Figure 1 , Figure 5 and Figure 6 In step S3, a TSV composite adapter board 200 is provided and the TSV composite adapter board 200 is bonded to the groove 102. The TSV composite adapter board 200 includes a TSV adapter board and a first redistribution layer 210 and a second redistribution layer 220 located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively.

[0094] Specifically, the TSV adapter board includes a silicon layer 201 and a TSV metal pillar 202 penetrating the silicon layer 201. The first redistribution layer 210 and the second redistribution layer 220 are electrically connected to the first end and the second end of the TSV metal pillar 202, respectively. The first redistribution layer 210 and the second redistribution layer 220 enable the TSV composite adapter board 200 to have a smaller line width / spacing to meet the requirements of subsequent high-density electrical connections. The line width of the TSV composite adapter board 200 can be 0.4μm to 1μm, such as 0.4μm, 0.5μm, 0.8μm, 1μm, etc., and the line spacing of the TSV composite adapter board 200 can be 0.4μm to 1μm, such as 0.4μm, 0.5μm, 0.8μm, 1μm, etc.

[0095] The specific materials, structures, and fabrication of the first redistribution layer 210 and the second redistribution layer 220 are not subject to excessive restrictions here, and can be selected as needed.

[0096] When the TSV composite adapter plate 200 is bonded to the groove 102, it can be bonded by an adhesive layer 300, such as a DAF film. The bonding method will not be described in detail here.

[0097] Next, refer to Figure 1 and Figure 7 Step S4 is executed, in which a protective layer 400 is formed on the first surface of the glass substrate 100, the protective layer 400 covering the TGV groove 101, the recess 102 and the TSV composite adapter plate 200.

[0098] Specifically, by providing the protective layer 400, subsequent diffusion of materials such as metals into the glass substrate 100 can be prevented, thereby avoiding short circuits.

[0099] As an example, the protective layer 400 may include one or a combination of a Ti protective layer and a Ta protective layer formed by a deposition process, and no excessive limitation is made here regarding the type of the protective layer 400.

[0100] Next, refer to Figure 1 and Figure 8 Step S5 is executed, in which a metal layer 500 is formed on the protective layer 400, and the metal layer 500 fills the TGV groove 101 and the recess 102.

[0101] Specifically, the metal layer 500 can be formed by electroplating, wherein the metal layer 500 may include a copper layer, but is not limited to this.

[0102] In this embodiment, by filling the metal layer 500, a structure such as... can be formed. Figure 9The TGV metal pillar 501 is prepared, and since the metal layer 500 can simultaneously fill the groove 102, and since the metal layer 500 has good thermal conductivity, it can also be used as a metal heat dissipation layer 502 for the TSV composite adapter plate 200. Therefore, this embodiment forms a metal heat dissipation layer 502 covering the TSV composite adapter plate 200 while preparing the TGV metal pillar 501, which can reduce the process steps, reduce costs, achieve good heat dissipation, and improve product quality.

[0103] Next, refer to Figure 1 and Figure 9 Step S6 is executed to perform a grinding process, exposing the first surface of the glass substrate 100 and the first redistribution layer 210, forming a TGV metal pillar 501 and a metal heat dissipation layer 502 located around the TSV composite adapter board 200. The TGV metal pillar 501 includes a first end and a second end that are disposed opposite to each other.

[0104] Specifically, the polishing process may include mechanical polishing or chemical mechanical polishing, and the specific polishing method is not limited here. After the polishing process, a flat surface can be obtained, which facilitates subsequent processes and exposes the first redistribution layer 210 and the first end of the TGV metal pillar 501 for subsequent electrical connection.

[0105] Next, refer to Figure 1 and Figure 10 In step S7, a third redistribution layer 230 is formed on the first surface of the glass substrate 100. The third redistribution layer 230 is electrically connected to the first end of the TGV metal pillar 501, and the third redistribution layer 230 is electrically connected to the first redistribution layer 210.

[0106] Specifically, the preparation, material, structure, etc. of the third redistribution layer 230 are not limited here and can be selected as needed.

[0107] Next, refer to Figure 1 and Figure 11 Step S8 is executed, thinning the glass substrate 100 from the second side of the glass substrate 100 to expose the second end of the TGV metal pillar 501 and the second redistribution layer 220.

[0108] Specifically, the thinning process may include mechanical polishing or chemical mechanical polishing, and the specific method is not limited here. After the thinning process, the size of the package structure can be reduced, a flat surface can be obtained, and the second end of the TGV metal pillar 501 and the second redistribution layer 220 can be exposed to facilitate subsequent electrical connections.

[0109] Next, refer to Figure 1 and Figure 12 In step S9, a fourth redistribution layer 240 is formed on the second surface of the glass substrate 100. The fourth redistribution layer 240 is electrically connected to the second end of the TGV metal pillar 501, and the fourth redistribution layer 240 is electrically connected to the second redistribution layer 220.

[0110] Specifically, the preparation, material, and structure of the fourth redistribution layer 240 are not limited here and can be selected as needed.

[0111] Next, refer to Figure 1 and Figure 13 In step S10, a first chip 610 and a second chip 620 are provided, and the first chip 610 and the second chip 620 are bonded to the third redistribution layer 230 by inverted bonding. The first chip 610 and the second chip 620 are both electrically connected to the third redistribution layer 230, and the first chip 610 and the second chip 620 are both located on the TSV composite adapter board 200 and are both electrically connected to the TSV composite adapter board 200.

[0112] Specifically, the first chip 610 and the second chip 620 can achieve high-speed signal connection through the TSV composite adapter board 200, such as... Figure 16 In the diagram, the area within the dashed box A represents the interconnection area between the first chip 610 and the second chip 620, specifically the area where the first chip 610 and the second chip 620 are electrically connected to the TSV composite adapter board 200 via the third redistribution layer 230.

[0113] As an example, the first chip 610 may include, for example, a system on chip technology (SoC), and the second chip 620 may include, for example, a high-bandwidth memory (HBM) chip.

[0114] Specifically, in this embodiment, the first chip 610 is a SoC chip and the second chip 620 is an HBM chip, but the types of the first chip 610 and the second chip 620 are not limited to these.

[0115] For further details, please refer to [link / reference]. Figure 14After bonding the first chip 610 and the second chip 620, it is preferable to fill the space between the first chip 610 and the third redistribution layer 230, and between the second chip 620 and the third redistribution layer 230, with an underfill layer 700 to improve bonding strength and protect the bonding interface. The underfill layer 700 can be made of a material with good adhesion and insulation, such as epoxy resin, polyimide, or silicone.

[0116] Next, refer to Figure 1 and Figure 14 In step S11, a metal bump 800 is formed on the surface of the fourth redistribution layer 240. The metal bump 800 is electrically connected to the fourth redistribution layer 240. The type and material of the metal bump 800 are not excessively restricted here.

[0117] See Figure 15 The diagram illustrates a top view of the prepared SoP packaging structure in this embodiment.

[0118] Next, refer to Figure 1 and Figure 15 Step S12 is executed to perform a cutting process to form a SoP package single-unit structure.

[0119] Specifically, the cutting process may include mechanical cutting, laser cutting, or a combination thereof. The specific method is not excessively limited here. Through the cutting process, the SoP packaging structure can be transformed into the required SoP packaging single-unit structure.

[0120] As an example, the SoP package monolithic structure may include a 1×SoC+4×HBM package monolithic structure, but is not limited to this; see reference [link to documentation]. Figure 16 In this embodiment, the SoP package single-unit structure includes six 1×SoC+4×HBM computing modules, which can achieve the packaging requirements of small size, high integration and high cost-effectiveness.

[0121] As an example, the shape of the SoP package unit structure may include, for example, a circle, an ellipse, or a polygon.

[0122] For details, please refer to Figure 16 In this embodiment, the shape of the SoP package unit structure is a 300×300mm square, but the shape of the SoP package unit structure is not limited to this, such as... Figure 17 It may also include other polygons such as circles, ellipses or triangles, without excessive restrictions here.

[0123] As an example, the method further includes the step of forming a rigid reinforcement 900 on the third redistribution layer 230, the rigid reinforcement 900 being located around the first chip 610 and the second chip 620, the rigid reinforcement 900 comprising a metal rigid reinforcement or a semiconductor rigid reinforcement.

[0124] For details, please refer to Figure 18 and Figure 19 This diagram illustrates the structure after the rigid reinforcement 900 is formed in the open area surrounding the first chip 610 and the second chip 620. The rigid reinforcement 900 increases the rigidity of the package structure, further reducing the probability of warpage. Regarding the material of the rigid reinforcement 900, it can be made of metal or semiconductor materials, etc., without excessive limitation.

[0125] See Figures 2 to 19 The present invention also provides a SoP packaging structure, the SoP packaging structure comprising:

[0126] A glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other;

[0127] TGV groove 101, the TGV groove 101 penetrates the glass substrate;

[0128] Groove 102, the groove 102 penetrates the glass substrate 100;

[0129] TGV metal column 501, which fills the TGV groove 101, includes a first end and a second end that are disposed opposite to each other;

[0130] TSV composite adapter board 200, which is bonded to the groove 102, includes a TSV adapter board and a first redistribution layer 210 and a second redistribution layer 220 located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively.

[0131] A metal heat dissipation layer 502 is located in the groove 102 and on the periphery of the TSV composite adapter plate 200.

[0132] A protective layer 400 is located within the groove 102 and the TGV groove 101, and covers the sidewalls of the TGV metal pillar 501 and the metal heat dissipation layer 502.

[0133] The third redistribution layer 230 is located on the first surface of the glass substrate 100, electrically connected to the first end of the TGV metal pillar 202, and electrically connected to the first redistribution layer 210.

[0134] The fourth redistribution layer 240 is located on the second surface of the glass substrate 100, electrically connected to the second end of the TGV metal pillar 202, and electrically connected to the second redistribution layer 220.

[0135] The first chip 610 and the second chip 620 are both inverted and bonded to the third redistribution layer 230 and are electrically connected to the third redistribution layer 230. The first chip 610 and the second chip 620 are both located above the TSV composite adapter board 200 and are electrically connected to the TSV composite adapter board 200.

[0136] Metal bump 800, the metal bump 800 is located on the surface of the fourth redistribution layer 240 and is electrically connected to the fourth redistribution layer 240.

[0137] As an example, the protective layer 400 includes one or a combination of a Ti protective layer and a Ta protective layer.

[0138] As an example, it also includes a rigid reinforcement 900 located on the third redistribution layer 230 and surrounding the first chip 610 and the second chip 620, the rigid reinforcement 900 including a metal rigid reinforcement or a semiconductor rigid reinforcement; it also includes a bottom filler layer 700 filling the gap between the first chip 610 and the third redistribution layer 230 and filling the gap between the second chip 620 and the third redistribution layer 230.

[0139] As an example, the glass substrate 100 has a size of 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; and the shape of the SoP packaging structure includes a circle, an ellipse, or a polygon.

[0140] In this embodiment, the SoP packaging structure can be prepared using the above-described preparation method, but it is not limited to this method. Other preparation processes can also be used, and no excessive restrictions are imposed here. In this embodiment, the SoP packaging structure is directly prepared using the above-described preparation process. Therefore, the specific structure, materials, etc. of the SoP packaging structure can be referred to the description in the above preparation method, and will not be repeated here.

[0141] In summary, the SoP packaging structure and its fabrication method of the present invention, based on the arrangement of TGV metal pillars, TSV composite adapter board and redistribution layer, can fabricate a high-density integrated composite adapter board. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. Moreover, after the dicing process, multiple computing modules can be accommodated in a single SoP package unit structure, meeting the requirements of small package size, high integration and high economic efficiency. Furthermore, based on the groove and TGV groove, a metal heat dissipation layer covering the TSV composite adapter board is formed at the same time as the TGV metal pillar is fabricated, which can reduce the process steps, reduce costs, achieve good heat dissipation and improve product quality.

[0142] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for fabricating a SoP (Sort of Package) packaging structure, characterized in that, Includes the following steps: A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other; The glass substrate is patterned to form grooves and TGV channels in the glass substrate; A TSV composite adapter board is provided and the TSV composite adapter board is bonded to the groove, wherein the TSV composite adapter board includes a TSV adapter board and a first redistribution layer and a second redistribution layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively; A protective layer is formed on the first surface of the glass substrate, the protective layer covering the TGV groove, the recess and the TSV composite adapter plate; A metal layer is formed on the protective layer, and the metal layer fills the TGV groove and the recess; A grinding process is performed to expose the first surface of the glass substrate and the first redistribution layer, forming TGV metal pillars and a metal heat dissipation layer located around the TSV composite adapter board. The TGV metal pillars include a first end and a second end that are disposed opposite to each other. A third redistribution layer is formed on the first surface of the glass substrate. The third redistribution layer is electrically connected to the first end of the TGV metal pillar and is also electrically connected to the first redistribution layer. Thinning the glass substrate from its second side exposes the second end of the TGV metal pillar and the second redistribution layer. A fourth redistribution layer is formed on the second surface of the glass substrate. The fourth redistribution layer is electrically connected to the second end of the TGV metal pillar and is also electrically connected to the second redistribution layer. A first chip and a second chip are provided, and the first chip and the second chip are bonded to the third redistribution layer by an inverted bonding method. The first chip and the second chip are both electrically connected to the third redistribution layer, and the first chip and the second chip are both located on the TSV composite adapter board and are both electrically connected to the TSV composite adapter board. Metal bumps are formed on the surface of the fourth redistribution layer, and the metal bumps are electrically connected to the fourth redistribution layer. The cutting process is performed to form a SoP (Sort of Package) single-unit structure.

2. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The method for forming the groove in the glass substrate includes mechanical cutting; the method for forming the TGV groove in the glass substrate includes laser cutting.

3. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The protective layer includes one or a combination of a Ti protective layer and a Ta protective layer formed by a deposition process.

4. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: Before the dicing process, the method further includes a step of forming a rigid reinforcement on the third redistribution layer, wherein the rigid reinforcement is located on the periphery of the first chip and the second chip; the rigid reinforcement includes a metal rigid reinforcement or a semiconductor rigid reinforcement.

5. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: It also includes the step of forming a bottom fill layer, which fills the gap between the first chip and the third redistribution layer and fills the gap between the second chip and the third redistribution layer.

6. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The glass substrate has a size of 100-600 mm; the SoP package unit structure includes a 1×SoC+4×HBM package unit structure; the shape of the SoP package unit structure includes circular, elliptical or polygonal.

7. A SoP packaging structure, characterized in that, The SoP encapsulation structure includes: A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other; TGV groove, the TGV groove penetrating the glass substrate; A groove that penetrates the glass substrate; TGV metal pillar, which fills the TGV groove, includes a first end and a second end disposed opposite to each other; TSV composite adapter plate, which is bonded to the groove, includes a TSV adapter plate and a first redistribution layer and a second redistribution layer located on opposite sides of the TSV adapter plate and electrically connected to the TSV adapter plate respectively. A metal heat dissipation layer is located in the groove and on the periphery of the TSV composite adapter plate; A protective layer is located within the groove and the TGV slot, and covers the sidewalls of the TGV metal pillar and the metal heat dissipation layer. The third redistribution layer is located on the first surface of the glass substrate, electrically connected to the first end of the TGV metal pillar, and electrically connected to the first redistribution layer. A fourth redistribution layer is located on the second surface of the glass substrate, electrically connected to the second end of the TGV metal pillar, and electrically connected to the second redistribution layer. The first chip and the second chip are both inverted and bonded to the third redistribution layer and electrically connected to the third redistribution layer. The first chip and the second chip are both located above the TSV composite adapter board and are electrically connected to the TSV composite adapter board. A metal bump is located on the surface of the fourth redistribution layer and is electrically connected to the fourth redistribution layer.

8. The SoP packaging structure according to claim 7, characterized in that: The protective layer includes one or a combination of Ti protective layer and Ta protective layer.

9. The SoP packaging structure according to claim 7, characterized in that: It also includes a rigid reinforcement located on the third redistribution layer and surrounding the first chip and the second chip, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; it also includes a bottom fill layer filling the gap between the first chip and the third redistribution layer and filling the gap between the second chip and the third redistribution layer.

10. The SoP packaging structure according to claim 7, characterized in that: The glass substrate has a size of 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; the shape of the SoP packaging structure includes circular, elliptical or polygonal.

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