Semiconductor device

By introducing a first channel region with a high impurity concentration and configuring a body region with high conductivity, the problem of threshold voltage reduction and deviation in trench MOSFETs when the trench spacing is reduced is solved, achieving high channel density and stable threshold voltage, and improving the performance and reliability of the device.

CN122139456APending Publication Date: 2026-06-02HITACHI POWER SEMICON DEVICE LTD
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Patent Information

Application Number
CN202480069632.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-05
Filing Date
2024-11-26
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

In the prior art, when the trench MOSFET with longitudinal channel fin structure reduces the trench spacing to increase the channel density, the threshold voltage (Vth) is prone to decrease or deviation.

Method used

A first channel region with a high impurity concentration is introduced into the channel region, and a high conductivity main body region is configured at the bottom of the trench. By controlling the impurity concentration and fin width of the channel region, the connection of the depletion layer is suppressed, and the desired threshold voltage is maintained.

Benefits of technology

Even when the trench spacing is reduced to increase the channel density, the reduction and deviation of the threshold voltage can be effectively suppressed, thereby improving the reliability and performance stability of the device.

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Abstract

In a trench MOSFET with a longitudinal channel fin structure, even when the trench spacing is reduced to increase the channel density, the decrease and deviation of the threshold voltage are suppressed. The semiconductor device (1) has: a plurality of trenches (2) which have a length direction in a first direction and a short side direction in a second direction when viewed from above, and are arranged in a plurality of trenches in the second direction; a source region (3) of a first conductivity type, which includes a fin structure divided by the plurality of trenches (2); a channel region (5) of a second conductivity type of fin structure, which is divided by the plurality of trenches (2); and a body region (9) of a second conductivity type, the channel region (5) being connected to the body region (9), and a channel current flowing longitudinally in the channel region (5), the channel region (5) having a first channel region (5A) connected to the lower surface of the source region (3) and a second channel region (5B) disposed below the first channel region (5A), the impurity concentration of the second conductivity type in the first channel region (5A) being higher than that in the second channel region (5B).
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Citation Information

Patent Citations

  • Embedded gate type semiconductor device

    JP2004207289A