A load-dispersed single crystal growth apparatus

Abstract

The application relates to the technical field of semiconductor equipment, in particular to a single crystal growth device with load dispersion, which comprises a supporting platform, a growth furnace arranged at the middle part of the upper end of the supporting platform, an observation tube butted at the upper end of the growth furnace, and a pulling tube cooperatively arranged at the upper end of the observation tube, wherein the side part of the growth furnace is provided with a load dispersion assembly, the lower end of the load dispersion assembly is arranged on the supporting platform, the side part of the growth furnace and located at the position close to the edge of the upper end of the supporting platform is provided with a monitoring assembly, and the monitoring assembly and the sidewall of the pulling tube are slidingly matched, a plurality of load dispersion structures are arranged, each different cavity is arranged on a different load structure, the stability of the device is ensured, the service life of each component is prolonged, the uniformity of the load dispersion is effectively ensured, the perpendicularity of the pulling tube after installation can be monitored, the installation precision is ensured, and the production quality of the single crystal silicon rod is improved.

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