Heating device for a silicon material reactor and method for heating the same

Abstract

The application discloses a heating device and a heating method of a silicon material reactor, which comprise a heat storage tank, two groups of heating rods are symmetrically arranged in the heat storage tank, a rotatable driving rod is arranged in the heat storage tank, the driving rod is arranged between the two groups of heating rods, an outer wall of the driving rod is provided with a driving plate, the two groups of heating rods are arranged through the driving plate, the heating rods are in contact with the driving plate but are not connected, and the driving plate is matched with the driving rod, so that the driving plate is lifted along the axis of the driving rod and the heat storage fluid in the heat storage tank is disturbed; the application has the beneficial effects that the two groups of heating rods are symmetrically arranged in the heat storage tank, a symmetrically-distributed heating heat source is constructed, an initial heating basis of the heat storage fluid is provided, and the local temperature difference of the heat storage fluid is reduced from the source.

Description

Technical Field

[0001] This invention relates to a heating device and heating method for a silicon material reactor. Background Technology

[0002] As a core material in high-tech fields such as semiconductors, photovoltaics, and electronic information, silicon materials have extremely high requirements for the uniformity, stability, and precise temperature control of the reaction temperature during their preparation process. Silicon material reactions (such as chemical vapor deposition and melt purification) need to be carried out within a specific temperature range of 200℃-800℃, and temperature fluctuations must be strictly controlled within ±15℃. Otherwise, it is easy to cause problems such as decreased product purity, increased crystallization defects, and poor quality consistency, which seriously restricts the performance of downstream high-end products.

[0003] As a core component of silicon material reactors, the heating device's heat exchange efficiency, temperature control accuracy, and operational stability directly determine the quality of silicon material preparation. Traditional heating devices often employ fixed heating rods or single-sided heating layouts, leading to stratification of the heat storage fluid due to thermal gradients during heating. This results in localized overheating or insufficient heating within the heat storage tank, uneven temperature distribution, and an inability to provide a stable temperature environment for the silicon material reaction. Furthermore, while some devices incorporate disturbance structures, these are often unidirectional stirring or fixed disturbance modes, failing to cover the entire heat storage tank and effectively breaking down the thermal boundary layer, resulting in low heat exchange efficiency. Therefore, this invention proposes a heating device and method for silicon material reactors to address these problems. Summary of the Invention

[0004] The purpose of this invention is to provide a heating device and heating method for a silicon material reactor to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] A heating device for a silicon material reactor includes a heat storage tank, wherein two sets of heating rods are symmetrically arranged in the heat storage tank;

[0007] The thermal storage tank is equipped with a rotatable drive rod, which is positioned between two sets of heating rods. A drive plate is provided on the outer wall of the drive rod, and the two sets of heating rods pass through the drive plate. The heating rods are in contact with the drive plate but not connected. The drive plate cooperates with the drive rod, causing the drive plate to rise and fall along the axis of the drive rod, thereby disturbing the thermal fluid in the thermal storage tank.

[0008] As an improvement to the above technical solution, the drive rod is provided with a feeding cavity, and the drive rod is provided with a feeding port, which is connected to the feeding cavity;

[0009] The outer wall of the drive rod is also provided with multiple sets of feed holes, which are located at the end away from the feed inlet and are connected to the feed cavity.

[0010] As an improvement to the above technical solution, the outer wall of the heat storage tank is provided with a discharge pipe, which is located away from the inlet.

[0011] The drive plate reciprocates between the discharge pipe and the feed hole.

[0012] As an improvement to the above technical solution, the outer wall of the drive rod is provided with a drive thread outer wall;

[0013] The drive plate has a drive threaded sleeve at its center, which is disposed on the outer wall of the drive thread and is threadedly engaged with the outer wall of the drive thread.

[0014] Guide sleeves are also symmetrically arranged on the drive board;

[0015] The two sets of heating rods are respectively arranged in two sets of guide sleeves, and the guide sleeves are in contact with the outer wall of the heating rods but not connected.

[0016] As an improvement to the above technical solution, a drive servo motor is provided at the bottom of the thermal storage tank, and the drive servo motor is connected to the drive rod for transmission.

[0017] The drive plate has multiple sets of flow channels, which are arranged in a circular array around the axis of the drive rod.

[0018] A feed flange is rotatably mounted on the drive rod, and a connecting sleeve is provided on the feed flange. The connecting sleeve is rotatably mounted on the outer wall of the drive rod, and the feed flange is located at the feed inlet.

[0019] Three sets of temperature sensors are evenly arranged on the inner wall of the heat storage tank.

[0020] A heating method for a heating device of a silicon material reactor includes the following steps:

[0021] Step 1: Activate two sets of heating rods to preheat the heat storage fluid in the heat storage tank to an initial temperature T0. The initial temperature T0 meets the preheating requirements for the silicon material reaction, and 200℃≤T0≤800℃;

[0022] Step 2: The fluid to be heated is fed into the feeding chamber through the feeding flange that mates with the feed port of the drive rod, and the feeding rate Q is controlled. The feeding rate Q is calculated using the following formula:

[0023] ;

[0024] Where k is the flow coefficient, with a value ranging from 0.6 to 0.95, determined by the viscosity and material properties of the thermal storage fluid; S is the total area of ​​all flow channels on the drive plate, in m². 2 v represents the average lifting speed of the drive plate along the axis of the drive rod, in m / s.

[0025] Step 3: Start the drive servo motor. The drive servo motor drives the drive rod to rotate. Through the threaded engagement between the outer wall of the drive thread of the drive rod and the drive thread sleeve of the drive plate, the drive plate moves back and forth along the heating rod between the feed hole and the discharge pipe, creating disturbance to the heat storage fluid. Set the reference disturbance frequency f0 of the drive plate.

[0026] Step 4: Three sets of temperature sensors collect real-time temperature data (T1, T2, T3) from different areas inside the thermal storage tank, and calculate the average temperature. If T_avg is related to the target reaction temperature T t The difference ΔT is the allowable temperature difference, 5℃≤ΔT≤15℃. The heating power P of the heating rod and the actual disturbance frequency f of the drive board are then adjusted in real time using the following PID control formula:

[0027] ;

[0028] ;

[0029] Where P0 is the reference power of the heating rod, in kW; Kp is the proportional coefficient, with a value range of 0.8≤Kp≤3.5; Ki is the integral coefficient, with a value range of 0.05≤Ki≤0.5; Kd is the differential coefficient, with a value range of 0.1≤Kd≤1.2; and Kd is the integral term of the temperature deviation. P is the differential term of the temperature deviation. n Rated power of the heating element, unit: kW;

[0030] Step 5: After the material enters the heat storage tank through the feeding chamber and feeding hole, it fully exchanges heat with the heat storage fluid under the disturbance of the drive plate. The heat-exchanged fluid is discharged through the discharge pipe on the outer wall of the heat storage tank, completing the heating process.

[0031] As an improvement to the above technical solution, the reference disturbance frequency f0 in step 3 has a range of 0.5Hz ≤ f0 ≤ 5Hz, and the lifting stroke L of the drive board satisfies: Where D is the inner diameter of the thermal storage tank, in meters, and d is the distance between the circumference of the feed hole and the axis of the drive rod, in meters.

[0032] As an improvement to the above technical solution, in step 4, the temperature sensor's acquisition period τ is 0.1s ≤ τ ≤ 1s, and before calculating the average temperature T_avg, the acquired T1, T2, and T3 are filtered to remove values ​​exceeding the threshold. Abnormal data within a range;

[0033] When adjusting the heating power P in step 4, the value of P must be within the range of 0.3P. n ≤P≤P n If the calculated P exceeds this range, the boundary value is taken as the actual heating power.

[0034] As an improvement to the above technical solution, the total area of ​​the flow channel in step 2 is... Where n is the number of flow channels, 3≤n≤12, and s is the area of ​​a single flow channel, in m². 2 And the area s of a single flow channel satisfies: 0.001m² 2 ≤s≤0.01m 2 .

[0035] As an improvement to the above technical solution, the relationship between the average lifting speed v of the drive plate and the rotational speed n of the drive rod in step 3 is as follows: , where n is the rotational speed of the drive rod, in r / min, and p is the lead of the outer wall of the drive thread, in m.

[0036] Compared with the prior art, the beneficial effects of the present invention are:

[0037] By symmetrically arranging two sets of heating rods inside the thermal storage tank, a symmetrically distributed heat source is constructed, providing a balanced initial heating foundation for the thermal storage fluid and reducing the local temperature difference of the thermal storage fluid from the source. Combined with the transmission cooperation between the drive rod and the drive plate, the drive plate moves up and down along the axis of the drive rod, forming an active and dynamic disturbance to the thermal storage fluid. This effectively eliminates the stratification phenomenon caused by the thermal gradient during the heating process, avoids the technical defects of local overheating or insufficient heating, significantly improves the temperature field uniformity of the thermal storage fluid inside the thermal storage tank, ensures that the temperature environment required for the silicon material reaction has high stability, and lays the temperature foundation for the smooth progress of the silicon material reaction.

[0038] Two sets of heating rods penetrate the drive plate and have a non-contact mating structure. On the one hand, this structure provides precise guidance and constraint for the lifting and lowering movement of the drive plate, limits the radial offset of the drive plate, ensures the smoothness and reliability of the lifting and lowering movement of the drive plate, and avoids mechanical interference between the drive plate and the heating rods and the inner wall of the heat storage tank during disturbance, thereby improving the safety and service life of the device. On the other hand, this structure makes the disturbance area of ​​the drive plate highly overlap with the heating area of ​​the heating rods. When the drive plate lifts and lowers, it can drive the heat storage fluid to form a continuous convection around the heating rods, enhance the heat exchange intensity between the heat storage fluid and the heating rods, shorten the time for the heat storage fluid to reach the target preheating temperature, and improve the thermal utilization efficiency and operating efficiency of the heating device.

[0039] The perturbation method, which uses the rotation of the drive rod to drive the drive plate to rise and fall along the axis, compared to traditional fixed perturbation structures or unidirectional stirring structures, can promote the formation of axial and radial combined convection motion in the thermal storage fluid. The perturbation effect covers the entire space inside the thermal storage tank, enabling rapid heat transfer and uniform diffusion in all areas of the thermal storage fluid, further optimizing the consistency of the temperature field distribution. At the same time, this rising and falling perturbation structure can adapt to thermal storage fluids with different liquid levels in the thermal storage tank, improving the adaptability of the heating device to different operating conditions. It ensures efficient and uniform heating effects under different feed rates and different volumes of thermal storage fluid, guaranteeing the stability and repeatability of silicon material reaction conditions, thereby improving the quality consistency and pass rate of silicon material products. Attached Figure Description

[0040] Figure 1 This is a schematic diagram of the structure of the present invention;

[0041] Figure 2 For the present invention Figure 1 A cross-sectional schematic diagram of AA in the middle;

[0042] Figure 3 For the present invention Figure 2 Enlarged structural diagram at point B;

[0043] Figure 4 For the present invention Figure 2 Enlarged structural diagram at point C;

[0044] Figure 5 This is a schematic diagram of the internal structure of the heat storage tank of the present invention;

[0045] Figure 6 This is a schematic diagram of the structure of the driver board of the present invention.

[0046] In the diagram: 10. Heat storage tank; 11. Drive servo motor; 12. Temperature sensor; 13. Discharge pipe; 20. Heating rod; 30. Drive rod; 31. Feeding chamber; 32. Connecting sleeve; 33. Feeding flange; 34. Feeding port; 35. Feeding hole; 36. Drive thread outer wall; 40. Drive plate; 41. Drive thread sleeve; 42. Flow groove; 43. Guide sleeve. Detailed Implementation

[0047] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0048] Example:

[0049] like Figure 1-6 As shown, this embodiment proposes a heating device for a silicon material reactor, including a heat storage tank 10, in which two sets of heating rods 20 are symmetrically arranged;

[0050] The heat storage tank 10 is provided with a rotatable drive rod 30, which is positioned between two sets of heating rods 20. A drive plate 40 is provided on the outer wall of the drive rod 30. The two sets of heating rods 20 are arranged through the drive plate 40. The heating rods 20 are in contact with the drive plate 40 but not connected. The drive plate 40 cooperates with the drive rod 30, causing the drive plate 40 to rise and fall along the axis of the drive rod 30, thereby disturbing the heat storage fluid in the heat storage tank 10.

[0051] In this embodiment, when heating is performed in the heat storage tank 10, the heat storage fluid is introduced into the heat storage tank 10, and then heated by two sets of heating rods 20. After that, the drive rod 30 is rotated. Through the cooperation of the drive rod 30 and the drive plate 40, the drive plate 40 is raised and lowered along the axis of the drive rod 30, which disturbs the heat storage fluid.

[0052] By symmetrically arranging two sets of heating rods 20 inside the heat storage tank 10, a symmetrically distributed heat source is constructed, providing a balanced initial heating foundation for the heat storage fluid and reducing the local temperature difference of the heat storage fluid from the source. Combined with the transmission cooperation between the drive rod 30 and the drive plate 40, the drive plate 40 moves up and down along the axis of the drive rod 30, forming an active and dynamic disturbance to the heat storage fluid. This effectively eliminates the stratification phenomenon caused by the thermal gradient during the heating process of the heat storage fluid, avoids the technical defects of local overheating or insufficient heating, significantly improves the temperature field uniformity of the heat storage fluid inside the heat storage tank 10, ensures that the temperature environment required for the silicon material reaction has high stability, and lays the temperature foundation for the smooth progress of the silicon material reaction.

[0053] Two sets of heating rods 20 penetrate the drive plate 40 and have a contactless but non-connected mating structure. On the one hand, this structure can provide precise guidance and constraint for the lifting and lowering movement of the drive plate 40, limit the radial offset of the drive plate 40, ensure the stability and reliability of the lifting and lowering movement of the drive plate 40, and avoid mechanical interference between the drive plate 40 and the heating rods 20 and the inner wall of the heat storage tank 10 during disturbance, thereby improving the safety and service life of the device. On the other hand, this structure makes the disturbance area of ​​the drive plate 40 highly overlap with the heating area of ​​the heating rods 20. When the drive plate 40 lifts and lowers, it can drive the heat storage fluid to form a continuous convection around the heating rods 20, enhance the heat exchange intensity between the heat storage fluid and the heating rods 20, shorten the time for the heat storage fluid to reach the target preheating temperature, and improve the thermal utilization efficiency and operating efficiency of the heating device.

[0054] The perturbation method, in which the drive rod 30 rotates and drives the drive plate 40 to rise and fall along the axis, compared with the traditional fixed perturbation structure or unidirectional stirring structure, can promote the thermal storage fluid to form a composite axial and radial convection motion. The perturbation effect covers the entire space inside the thermal storage tank 10, enabling rapid heat transfer and uniform diffusion in all areas of the thermal storage fluid, further optimizing the consistency of the temperature field distribution. At the same time, this rising and falling perturbation structure can be adapted to thermal storage fluids with different liquid levels in the thermal storage tank 10, improving the adaptability of the heating device to different working conditions. It ensures efficient and uniform heating under different feed rates and different volumes of thermal storage fluid, ensuring the stability and repeatability of silicon material reaction conditions, thereby improving the quality consistency and pass rate of silicon material products.

[0055] Specifically, the drive rod 30 is provided with a feeding chamber 31, and the drive rod 30 is provided with a feeding port 34, which is connected to the feeding chamber 31;

[0056] The outer wall of the drive rod 30 is also provided with a plurality of feed holes 35, which are located at the end away from the feed inlet 34 and are connected to the feed cavity 31.

[0057] In this embodiment, by integrating the feeding chamber 31 into the drive rod 30, the drive rod has both power transmission and material conveying functions. There is no need to lay out an independent feeding pipe in the heat storage tank 10, which effectively simplifies the overall structural layout of the heating device, reduces the risk of spatial interference between the feeding component and core working components such as the heating rod 20 and the drive plate 40, improves the compactness and space utilization of the device structure, and reduces the complexity of multi-component assembly and maintenance costs.

[0058] Specifically, the outer wall of the heat storage tank 10 is provided with a discharge pipe 13, which is located away from the inlet hole 35;

[0059] The drive plate 40 reciprocates between the discharge pipe 13 and the feed hole 35.

[0060] In this embodiment, by arranging the discharge pipe 13 and the inlet hole in a far-away manner, a reasonable material flow path is constructed, which involves input through the inlet hole 35, heat exchange within the heat storage tank 10, and output through the discharge pipe 13. This effectively avoids the phenomenon of fluid short-circuiting, where the fluid is discharged from the discharge pipe 13 before it has completed sufficient heat exchange upon entering the heat storage tank 10. This extends the effective heat exchange time of the fluid within the heat storage tank 10, ensuring deep heat exchange between the heat storage fluids and guaranteeing that the material can stably reach the target temperature required for the silicon material reaction.

[0061] Specifically, the outer wall of the drive rod 30 is provided with a drive thread outer wall 36;

[0062] The center of the drive plate 40 is provided with a drive thread sleeve 41, which is disposed on the outer wall 36 of the drive thread and is threadedly engaged with the outer wall 36 of the drive thread.

[0063] Guide sleeves 43 are also symmetrically arranged on the drive plate 40;

[0064] The two sets of heating rods 20 are respectively disposed in the two sets of guide sleeves 43, and the guide sleeves 43 are in contact with the outer wall of the heating rods 20 but not connected.

[0065] In this embodiment, the threaded engagement structure between the outer wall 36 of the drive thread and the drive thread sleeve 41 enables precise and efficient conversion of rotational motion into linear motion. When the drive servo motor 11 drives the drive rod 30 to rotate, the transmission characteristics of the thread meshing can smoothly convert the rotational power into the axial lifting force of the drive plate 40. Compared with traditional transmission methods such as connecting rods and cylinders, this structure has a small transmission gap and high positioning accuracy. The lifting speed and stroke of the drive plate 40 can be directly and precisely controlled by adjusting the speed of the drive rod 30, thereby achieving fine control of the disturbance intensity of the heat storage fluid, adapting to the different requirements of heat exchange efficiency at different stages of silicon material reaction, and ensuring the stability and controllability of the disturbance effect.

[0066] The symmetrical fit design of the guide sleeve 43 and the heating rod 20 without contact provides a reliable dual guiding constraint for the lifting and lowering of the drive plate 40. On the one hand, the two sets of guide sleeves 43 slide along the axial direction of the two sets of heating rods 20 respectively, strictly limiting the radial offset degree of freedom of the drive plate 40, effectively avoiding mechanical interference such as collision or jamming between the drive plate 40 and the inner wall of the heat storage tank 10, the drive rod 30 or the feed hole 35 during high-speed lifting or violent disturbance, significantly improving the safety and stability of the device operation. On the other hand, the non-contact design between the guide sleeve 43 and the heating rod 20 allows for the treatment of surface impurities of the heating rod 20 to prevent affecting the heating efficiency of the heating rod 20.

[0067] Specifically, a drive servo motor 11 is provided at the bottom of the heat storage tank 10, and the drive servo motor 11 is connected to the drive rod 30 in a transmission manner.

[0068] The drive plate 40 has multiple sets of flow channels 42, which are arranged in a ring array around the axis of the drive rod 30.

[0069] A feed flange 33 is rotatably mounted on the drive rod 30. A connecting sleeve 32 is provided on the feed flange 33. The connecting sleeve 32 is rotatably mounted on the outer wall of the drive rod 30. The feed flange 33 is located at the feed inlet 34.

[0070] Three sets of temperature sensors 12 are evenly arranged on the inner wall of the heat storage tank 10.

[0071] In this embodiment, the annular array layout allows the flow channels 42 to uniformly cover the entire area of ​​the drive plate 40. When the drive plate 40 is raised or lowered, the heat storage fluid can flow bidirectionally through the flow channels 42, effectively reducing the fluid resistance during the movement of the drive plate 40, reducing the load energy consumption of the drive servo motor 11, and avoiding problems such as drive plate 40 jamming and device vibration caused by excessive fluid resistance, thus improving operational stability. Secondly, the flow channels 42 can break the fluid pressure difference on both sides of the drive plate 40, promoting the formation of convection circulation of fluid in the upper and lower areas of the heat storage tank 10. Combined with the raising and lowering disturbance of the drive plate 40, it further enhances the mixing uniformity of the heat storage fluid in each layer, avoids the formation of a fluid stagnation zone below the drive plate 40, and ensures that the fluid in the entire area can participate in heat exchange, significantly improving heat utilization efficiency and heat exchange uniformity.

[0072] In this case, the outer wall of the reactor is wrapped with a spiral heating tube. The feed inlet of the spiral heating tube is connected to the discharge pipe 13, and the discharge outlet of the spiral heating tube is connected to the feed flange 33. When the reactor is heated, the heat storage fluid flows back and forth between the spiral heating tube and the heat storage tank 10 to complete the heating treatment of the reactor.

[0073] A heating method for a heating device of a silicon material reactor includes the following steps:

[0074] Step 1: Activate two sets of heating rods 20 to preheat the heat storage fluid in the heat storage tank 10 to an initial temperature T0. The initial temperature T0 meets the preheating requirements for the silicon material reaction, and 200℃≤T0≤800℃;

[0075] Step 2: The fluid to be heated is fed into the feeding chamber 31 through the feeding flange 33 that cooperates with the feeding port 34 of the drive rod 30, and the feeding rate Q is controlled. The feeding rate Q is calculated by the following formula:

[0076] ;

[0077] Where k is the flow coefficient, with a value ranging from 0.6 to 0.95, determined by the viscosity and material properties of the thermal storage fluid; S is the total area of ​​all flow channels 42 on the drive plate 40, in m². 2 v represents the average lifting speed of the drive plate 40 along the axis of the drive rod, in m / s.

[0078] Step 3: Start the drive servo motor 11. The drive servo motor 11 drives the drive rod 30 to rotate. Through the threaded engagement between the drive thread outer wall 36 of the drive rod 30 and the drive thread sleeve 41 of the drive plate 40, the drive plate 40 moves back and forth along the heating rod 20 between the feed hole 35 and the discharge pipe 13, creating disturbance to the heat storage fluid. Set the reference disturbance frequency f0 of the drive plate 40.

[0079] Step 4: Three sets of temperature sensors 12 collect temperature data T1, T2, and T3 from different areas inside the thermal storage tank 10 in real time, and calculate the average temperature. If T_avg is related to the target reaction temperature T t The difference ΔT is the allowable temperature difference, 5℃≤ΔT≤15℃. The heating power P of the heating rod 20 and the actual disturbance frequency f of the drive board 40 are adjusted in real time using the following PID control formula:

[0080] ;

[0081] ;

[0082] Wherein, P0 is the reference power of heating rod 20, in kW; Kp is the proportional coefficient, with a value range of 0.8≤Kp≤3.5; Ki is the integral coefficient, with a value range of 0.05≤Ki≤0.5; Kd is the differential coefficient, with a value range of 0.1≤Kd≤1.2; This is the integral term for the temperature deviation; P is the differential term of the temperature deviation. n The rated power of heating rod 20 is expressed in kW.

[0083] Step 5: After the material enters the heat storage tank 10 through the feeding chamber 31 and the feeding hole 35, it fully exchanges heat with the heat storage fluid under the disturbance of the drive plate 40. The heat-exchanged fluid is discharged through the discharge pipe 13 on the outer wall of the heat storage tank 10, thus completing the heating process.

[0084] In this embodiment, the two sets of heating rods 20 symmetrically arranged inside the heat storage tank 10 are designed in conjunction with the drive plate 40, which can be raised and lowered along the axis of the drive rod 30. This is combined with the integrated feeding cavity 31, multiple feeding holes 35, and the discharge pipe 13 on the outer wall of the heat storage tank 10 away from the feeding holes 35. The drive rod 30 drives the threaded outer wall 36, and the drive plate 40 drives the threaded sleeve 41. The guide sleeve 43 and the heating rod 20 are guided by contact. Furthermore, the precise transmission and drive of the servo motor 11 at the bottom of the heat storage tank 10 are also provided. The annular array of flow channels 42 on plate 40, the rotating feed flange 33 on drive rod 30, and the three sets of temperature sensors 12 evenly distributed on the inner wall of heat storage tank 10, along with a streamlined heating method employing preheating, quantitative feeding, dynamic disturbance, PID closed-loop temperature control, and stable discharge, includes quantitative setting of parameters such as initial temperature T0, feed rate Q, and reference disturbance frequency f0, as well as the linkage adjustment of heating power and disturbance frequency. This achieves synergistic gains from multiple technologies: simplifying the overall structural layout of the device, improving space utilization and efficiency. The device offers convenient assembly, reducing component interference and maintenance costs. Through the reciprocating agitation of the drive plate 40, the flow channel 42, and fluid dispersion, it eliminates the stratification of the heat storage fluid and the thermal boundary layer, extending the effective heat exchange time of the material and significantly improving the overall uniformity of the temperature and material fields within the heat storage tank 10. Simultaneously, the high-precision drive of the servo motor 11, the precise coordination of the threaded transmission and guiding structure ensures the stability and reliability of the device's operation, reducing energy consumption and mechanical wear. Furthermore, through the full-range monitoring, filtering, and closed-loop control of the PID algorithm using three sets of temperature sensors 12, precise control of the target reaction temperature is achieved, allowing a temperature difference of 5℃≤ΔT≤15℃. This effectively solves the technical problems of uneven heat exchange, low temperature control accuracy, and poor adaptability of traditional heating devices. Moreover, through parameter range design, it adapts to different silicon material reaction conditions, ensuring sufficient heat exchange and stable attainment of the target reaction temperature, significantly improving the quality consistency and pass rate of silicon material products. It provides a stringent, stable, and efficient heating environment for silicon material reactions, combining good practicality, economy, and versatility.

[0085] Specifically, the reference disturbance frequency f0 mentioned in step 3 has a value range of 0.5Hz ≤ f0 ≤ 5Hz, and the lifting stroke L of the drive board 40 satisfies: Where D is the inner diameter of the heat storage tank 10, in meters, and d is the distance between the circumference of the feed hole 35 and the axis of the drive rod, in meters.

[0086] Specifically, in step 4, the temperature sensor's acquisition period τ is 0.1s ≤ τ ≤ 1s, and before calculating the average temperature T_avg, the acquired T1, T2, and T3 are filtered to remove values ​​exceeding the threshold. Abnormal data within a range;

[0087] When adjusting the heating power P in step 4, the value of P must be within the range of 0.3P. n ≤P≤P n If the calculated P exceeds this range, the boundary value is taken as the actual heating power.

[0088] Specifically, the total area of ​​the flow channel 42 mentioned in step 2 Where n is the number of flow channels 42, 3≤n≤12, and s is the area of ​​a single flow channel 42, in m². 2 And the area s of a single flow channel 42 satisfies: 0.001m² 2 ≤s≤0.01m 2 .

[0089] Specifically, in step 3, the relationship between the average lifting speed v of the drive plate 40 and the rotational speed n of the drive rod is as follows: Where n is the rotational speed of the drive rod, in r / min, and p is the lead of the outer wall of the drive thread, in m.

[0090] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A heating device for a silicon material reactor, characterized in that: It includes a heat storage tank (10), in which two sets of heating rods (20) are symmetrically arranged; The heat storage tank (10) is provided with a rotatable drive rod (30), which is located between two sets of heating rods (20). The outer wall of the drive rod (30) is provided with a drive plate (40). The two sets of heating rods (20) are arranged through the drive plate (40). The heating rods (20) are in contact with the drive plate (40) but not connected. The drive plate (40) cooperates with the drive rod (30) so that the drive plate (40) moves up and down along the axis of the drive rod (30) to disturb the heat storage fluid in the heat storage tank (10).

2. The heating device for a silicon material reactor according to claim 1, characterized in that: The drive rod (30) is provided with a feeding cavity (31), and the drive rod (30) is provided with a feeding port (34), which is connected to the feeding cavity (31); The outer wall of the drive rod (30) is also provided with multiple sets of feed holes (35), which are located at one end away from the feed inlet (34) and are connected to the feed cavity (31).

3. The heating device for a silicon material reactor according to claim 2, characterized in that: The outer wall of the heat storage tank (10) is provided with a discharge pipe (13), which is located away from the feed hole (35); The drive plate (40) reciprocates between the discharge pipe (13) and the feed hole (35).

4. The heating device for a silicon material reactor according to claim 3, characterized in that: The outer wall of the drive rod (30) is provided with a drive thread outer wall (36). The center of the drive plate (40) is provided with a drive thread sleeve (41), which is disposed on the outer wall (36) of the drive thread and is threadedly engaged with the outer wall (36) of the drive thread. Guide sleeves (43) are also symmetrically arranged on the drive plate (40); The two sets of heating rods (20) are respectively arranged in two sets of guide sleeves (43), and the guide sleeves (43) are in contact with the outer wall of the heating rods (20) but not connected.

5. The heating device for a silicon material reactor according to claim 4, characterized in that: The bottom end of the heat storage tank (10) is provided with a drive servo motor (11), and the drive servo motor (11) is connected to the drive rod (30) in a transmission connection. The drive plate (40) has multiple sets of flow channels (42), and the multiple sets of flow channels (42) are arranged in a ring array with the axis of the drive rod (30) as the center. A feed flange (33) is rotatably mounted on the drive rod (30), and a connecting sleeve (32) is mounted on the feed flange (33). The connecting sleeve (32) is rotatably mounted on the outer wall of the drive rod (30), and the feed flange (33) is located at the feed inlet (34). Three sets of temperature sensors (12) are evenly arranged on the inner wall of the heat storage tank (10).

6. A heating method for a silicon material reactor based on the heating device according to any one of claims 1-5, characterized in that: Includes the following steps: Step 1: Activate two sets of heating rods (20) to preheat the heat storage fluid in the heat storage tank (10) to the initial temperature T0, wherein the initial temperature T0 meets the preheating requirements of the silicon material reaction, and 200℃≤T0≤800℃; Step 2: The fluid to be heated is fed into the feed chamber (31) through the feed flange (33) that cooperates with the feed port (34) of the drive rod (30), and the feed rate Q is controlled. The feed rate Q is calculated by the following formula: ； Where k is the flow coefficient, with a value range of 0.6≤k≤0.95, determined by the viscosity and material properties of the heat storage fluid; S is the total area of ​​all flow channels (42) on the drive plate (40), in m². 2 v is the average lifting speed of the drive plate (40) along the axis of the drive rod, in m / s; Step 3: Start the drive servo motor (11). The drive servo motor (11) drives the drive rod (30) to rotate. Through the threaded engagement of the drive thread outer wall (36) of the drive rod (30) and the drive thread sleeve (41) of the drive plate (40), the drive plate (40) moves back and forth along the heating rod (20) between the feed hole (35) and the discharge pipe (13), causing disturbance to the heat storage fluid. Set the reference disturbance frequency f0 of the drive plate (40). Step 4: Three sets of temperature sensors (12) collect temperature data T1, T2, and T3 from different areas inside the thermal storage tank (10) in real time, and calculate the average temperature. If T_avg is related to the target reaction temperature T t The difference ΔT is the allowable temperature difference, 5℃≤ΔT≤15℃. The heating power P of the heating rod (20) and the actual disturbance frequency f of the drive plate (40) are adjusted in real time by the following PID control formula: ； ； Wherein, P0 is the reference power of the heating rod (20), in kW; Kp is the proportional coefficient, with a value range of 0.8≤Kp≤3.5; Ki is the integral coefficient, with a value range of 0.05≤Ki≤0.5; Kd is the differential coefficient, with a value range of 0.1≤Kd≤1.2; This is the integral term for the temperature deviation; P is the differential term of the temperature deviation. n Rated power of heating rod (20), unit: kW; Step 5: After the material enters the heat storage tank (10) through the feeding chamber (31) and the feeding hole (35), it fully exchanges heat with the heat storage fluid under the disturbance of the drive plate (40). The heat-exchanged fluid is discharged through the discharge pipe (13) on the outer wall of the heat storage tank (10), thus completing the heating process.

7. The heating method of the heating device for a silicon material reactor according to claim 6, characterized in that: The reference disturbance frequency f0 mentioned in step 3 has a value range of 0.5Hz≤f0≤5Hz, and the lifting stroke L of the drive board (40) satisfies: Where D is the inner diameter of the heat storage tank (10), in m, and d is the distance between the circumference of the feed hole (35) and the axis of the drive rod, in m.

8. The heating method of the heating device for a silicon material reactor according to claim 6, characterized in that: In step 4, the temperature sensor's acquisition period τ is 0.1s ≤ τ ≤ 1s, and before calculating the average temperature T_avg, the acquired T1, T2, and T3 are filtered to remove values ​​exceeding the threshold. Abnormal data within a range; When adjusting the heating power P in step 4, the value of P must be within the range of 0.3P. n ≤P≤P n If the calculated P exceeds this range, the boundary value is taken as the actual heating power.

9. The heating method of the heating device for a silicon material reactor according to claim 6, characterized in that: The total area of ​​the flow channel (42) mentioned in step 2 Where n is the number of flow channels (42), 3≤n≤12, and s is the area of ​​a single flow channel (42), in m². 2 And the area s of a single flow channel (42) satisfies: 0.001m 2 ≤s≤0.01m 2 .

10. The method of using the heating device for a silicon material reactor according to claim 6, characterized in that: The relationship between the average lifting speed v of the drive plate (40) and the rotational speed n of the drive rod in step 3 is as follows: , where n is the rotational speed of the drive rod, in r / min, and p is the lead of the outer wall of the drive thread (36), in m.

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