A grid for focused ion beam preparation of transmission electron microscopy samples

Abstract

The application discloses a carrier net for preparing a transmission electron microscope sample by using a focused ion beam, which comprises a carrier net base, a connecting bridge and a welding area. The carrier net base is used for being installed in a sample rod in cooperation with a transmission electron microscope sample table. One end of the connecting bridge is connected with the carrier net base, and the other end of the connecting bridge extends along an A-axis of the sample rod. The welding area is arranged at the other end of the connecting bridge and is used for fixing a sample. The connecting bridge can be plastically deformed under an external force, including torsional deformation around the A-axis of the sample rod and warping deformation around a B-axis of the sample rod, so as to compensate for an observation angle of the sample. The carrier net superimposes an additional tilt angle on the sample through the plastic deformation of the connecting bridge, so that an effective observation angle is expanded to more than 45 DEG, and the problem that a low-symmetry crystal material is difficult to be adjusted to a required crystal band axis is solved. The welding area is structurally distinguished from a clamping area, so that a micron-level sample is protected from being damaged. The application has the advantages of simple structure, convenient operation and low cost, and is suitable for various transmission electron microscope samples prepared by using the focused ion beam.

Description

Technical Field

[0001] This invention relates to the field of transmission electron microscopy characterization and analysis, specifically to a grid for preparing transmission electron microscopy samples using focused ion beam. Background Technology

[0002] Observing the microstructure, morphology, and composition of crystalline materials using transmission electron microscopy (TEM) is an important method in modern materials research. Commonly used methods for preparing TEM samples for observation of crystalline materials include conventional ion thinning, electrolytic double-jetting, grinding, and focused ion beam cutting. Electrolytic double-jetting is often used for relatively homogeneous conductive materials. Ion thinning is mainly used for non-conductive materials. Grinding is mainly used for brittle materials. For point-to-point observation of specific areas of a few micrometers, it is difficult to prepare TEM samples using ion thinning, electrolytic double-jetting, or grinding methods. Therefore, focused ion beam cutting becomes a suitable method.

[0003] The steps for preparing samples for transmission electron microscopy (TEM) observation by focused ion beam cutting include: (1) depositing a protective platinum layer on the surface; (2) extracting a sample; (3) welding it to a special support grid; and (4) finally thinning it to a thickness that can be observed by TEM. In the welding process of (3), the orientation of the sample and the support grid is fixed. The support grid and the sample are placed together in the TEM for observation. However, the TEM double tilting sample rod generally rotates a maximum of ±40 degrees in the A-axis (sample rod axis) direction. The maximum angle of rotation perpendicular to the B-axis of the sample rod is about 30 degrees. Therefore, it is difficult to rotate some low-symmetry hexagonal crystal samples to the required low-index zone axis, such as the

[0001] zone axis. This is because the angle of rotation from the existing orientation may be close to 90 degrees to reach this zone axis. The area often cut by focused ion beam has a small number of grains, and it is not easy to find replacement grains. The cost of re-cutting a sample using focused ion beam is high. Therefore, how to increase the effective tilt angle of the sample becomes a problem. Summary of the Invention

[0004] To address the problems existing in the prior art, the present invention provides a carrier for preparing transmission electron microscopy (TEM) samples using focused ion beams, which can achieve multiple tilt angles for TEM samples.

[0005] This invention is achieved through the following technical solution: In a first aspect, this application provides a grid for preparing transmission electron microscopy samples using focused ion beam, comprising a grid substrate, connecting bridges, and a welding area; The carrier substrate is used to cooperate with the transmission electron microscope sample stage and is installed in the sample stage of the sample rod; One end of the connecting bridge is connected to the carrier substrate, and the other end extends along the A-axis of the sample rod; The welding area is located at the other end of the connecting bridge and is used to connect the observation sample; The connecting bridge is capable of plastic deformation to compensate for the observation angle of the sample; The plastic deformation of the connecting bridge includes: a first deformation of torsion about the A axis of the sample rod, and / or a second deformation of warping about the B axis of the sample rod.

[0006] Preferably, the shape of the carrier substrate matches the sample stage, and it has a semi-circular outer surface with a central angle greater than 180°.

[0007] Preferably, the connecting bridge is a flat strip structure, the width of which is greater than the thickness of the carrier net.

[0008] Preferably, the other end of the connecting bridge is provided with a clamping area, the width of which is greater than or equal to the width of the connecting bridge.

[0009] Preferably, the welding area is located at the end of the clamping area, and the width of the welding area is smaller than the width of the clamping area.

[0010] Preferably, a first arc transition zone is provided at the connection between the connecting bridge and the carrier substrate, and a second arc transition zone is provided at the connection between the connecting bridge and the clamping area.

[0011] Preferably, the carrier mesh is integrally formed from metal material.

[0012] Preferably, the metallic material is one of copper, aluminum, nickel, or molybdenum.

[0013] Preferably, the outer diameter of the carrier substrate is 3 mm and the inner diameter is 2.1 mm; The connecting bridge has a length of 570 micrometers and a width of 300 micrometers; The clamping area has a length of 800 micrometers and a width of 300 micrometers; The welding area extends 150 micrometers beyond the clamping area and has a width of 100 micrometers; The radius of the arc of the first and second arc transition regions is 100 micrometers. The thickness of the carrier mesh is 100-300 micrometers.

[0014] Secondly, this application provides a transmission electron microscope sample rod, including a rod body and a sample stage disposed at the front end of the rod body, wherein the sample stage is provided with the carrier net as described above.

[0015] Compared with the prior art, the present invention has the following beneficial technical effects: The carrier net provided in this application provides stable support by mounting the carrier net substrate onto the sample stage of the sample rod. The connecting bridge extends along the A-axis of the sample rod and has a welding area at its end for fixing the sample. When the observation angle needs to be adjusted, the operator can use external force to cause plastic deformation of the connecting bridge, specifically including torsional deformation around the A-axis or warping deformation around the B-axis. These two deformation modes correspond to the two mutually perpendicular rotational axes of the sample rod, respectively. The core of this solution lies in transferring the compensation function for the sample tilt angle from the sample rod to the carrier net itself, and adding an additional tilt angle to the sample through the plastic deformation of the connecting bridge. Compared to existing technologies, this application utilizes the plastic deformation of the connecting bridge to allow the sample to acquire an additional tilt angle exceeding 45° beyond the sample rod's own tilt range. This effectively solves the problem of low-symmetry crystals being difficult to adjust to the required zone axis, significantly expanding the effective observation angle range of the sample. It is particularly suitable for adjusting the zone axis of low-symmetry crystal materials such as hexagonal and monoclinic crystals. Secondly, the deformation area is limited to the connecting bridge, avoiding the problem of uncontrollable sample position caused by directly bending the entire transfer mesh. Thirdly, the welding area is located at the end of the connecting bridge, so the clamping area is stressed while the welding area is not, effectively protecting the micron-sized sample from being knocked off. In addition, this structure does not require modification of electron microscope equipment or increase sample preparation costs, and is characterized by its ease of operation and high practicality. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a near-isometric view of the carrier net of the present invention; Figure 2 This is a front view of the carrier network of the present invention; Figure 3 This is a schematic diagram of the connecting bridge area after it has been twisted 45 degrees. Figure 4 This is a schematic diagram showing the bridge area after it has been tilted up at a 45-degree angle. In the picture: 1 carrier substrate; 2 First circular arc transition zone; 3 Second circular arc transition zone; 4 Intermediate connecting bridge area; 5 Clamping area; 6 Welding area. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0019] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0020] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0021] In the description of the embodiments of this application, it should be noted that if terms such as "upper," "lower," "horizontal," or "inner" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use, they are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, terms such as "first" and "second" are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0022] Furthermore, the use of the term "horizontal" does not imply that the component must be absolutely horizontal, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0023] In the description of the embodiments of this application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0024] A grid for preparing transmission electron microscopy samples using focused ion beam, comprising a grid substrate, connecting bridge 4, and a welding area; This mesh substrate is used to mate with the transmission electron microscope sample stage; The mesh substrate serves as the base for the entire mesh and is used to mount it in the sample stage of the sample rod. The mesh is then placed into the field of view of the transmission electron microscope for observation via the sample rod.

[0025] One end of the connecting bridge 4 is connected to the carrier substrate, and the other end extends along the A-axis of the sample rod. A welding area is formed at the other end of the connecting bridge, which is used to connect the observation sample. The connecting bridge 4 can undergo plastic deformation to compensate for the observation angle of the sample; It should be noted that the sample holder has two mutually perpendicular axes of rotation, wherein: The A-axis of the sample rod is the horizontal axis for sample insertion. After the carrier net is installed, the length direction of the connecting bridge 4 is coaxial with the A-axis; rotation around the A-axis can achieve tilting of the sample in that axis. The B-axis of the sample rod is a horizontal axis perpendicular to the A-axis; rotating around this B-axis allows the sample to tilt in a direction perpendicular to the A-axis. The plastic deformation of the connecting bridge 4 includes: In the first deformation mode, torsional deformation occurs about the A-axis, so that the sample at the welding area 6 acquires an additional tilt angle about the A-axis relative to the carrier substrate 1. The second deformation mode involves warping about the B-axis to give the sample at the welding zone 6 an additional tilt angle about the B-axis relative to the substrate 1.

[0026] The support frame consists of a rigid support matrix that precisely fits the electron microscope stage to ensure installation stability, while the connecting bridge, as a deformable section, extends the sample welding area beyond the support matrix. When the mechanical tilt range of the transmission electron microscope sample rod itself is insufficient to adjust a specific zone axis of a low-symmetry crystal (such as the

[0001] axis of a hexagonal crystal system) to the observation position, the operator can use tweezers to hold the end of the connecting bridge and manually apply torque to induce torsional deformation around the A-axis of the sample rod, or apply pressure in the vertical plane to induce warping deformation around the B-axis. These two plastic deformation modes are equivalent to adding a preset compensation angle of up to 45° to the A-axis and B-axis respectively on the basis of the original tilt angle of the sample rod, thereby allowing the zone axis that was originally limited by the mechanical stroke of the sample rod to enter the usable tilt range. This grid eliminates the need for expensive focused ion beam sample preparation. By simply improving the structure of the grid itself, it solves the problem of tilt dead angle in transmission electron microscopy crystallography analysis at a very low cost. It is especially suitable for the accurate characterization of low-symmetry materials such as hexagonal and monoclinic materials in the study of material microstructure.

[0027] In some embodiments, the shape of the carrier body matches the sample stage, and the carrier body can be embedded in the sample stage so that the entire carrier body and the sample stage form a stable connection, and the connecting bridge 4 is connected to the inner wall of the carrier body.

[0028] The mesh carrier has a semi-circular outer surface with a diameter that matches the diameter of the sample stage, allowing the mesh carrier to be easily placed into the sample stage. Furthermore, the central angle of the semi-circular outer surface of the carrier body is greater than 180°, which can maximize the contact area between the carrier body and the sample stage and improve the stability of the carrier on the sample stage.

[0029] Preferably, the carrier net body is a circular ring structure, with one end of the connecting bridge connected to the inner ring wall and the other end extending towards the center.

[0030] In a specific example, the main outline of the mesh substrate 1 is constructed as an arc-shaped structure that matches the circular groove of the sample stage. The mesh substrate 1 has a semi-circular outer edge surface with a radius of curvature adapted to the inner diameter of a standard transmission electron microscope sample stage (typically 3 mm in diameter). Through the engagement of this semi-circular outer edge with the sample stage groove, the mesh can be securely positioned within the sample stage, forming a reliable initial connection.

[0031] The root of the connecting bridge 4 is connected to the inner wall edge of the carrier substrate 1, ensuring that when the carrier substrate 1 is fixed to the sample stage, the connecting bridge 4 can extend suspended to the center area of ​​the sample stage in a predetermined direction (i.e., the direction of the sample rod A axis), so that the sample on the end welding area 6 is within the electron beam observation field of view.

[0032] To further improve the anti-rotation stability and anti-fall-off capability of the mesh carrier within the sample stage, the semi-circular structure of the mesh carrier substrate 1 was optimized in this embodiment. The central angle corresponding to the outer edge of the semi-circular mesh carrier substrate 1 was set to be greater than 180°, for example, 200°.

[0033] In some embodiments, the connecting bridge 4 is a flat strip structure with a clamping area 5 at one end and a welding area 6 at the end of the clamping area, which is used for welding samples.

[0034] The connecting bridge 4 is constructed as a flat strip structure. This geometric design aims to meet two key functional requirements: first, to ensure that the connecting bridge 4 has good plastic deformation capacity, so as to facilitate the adjustment of the sample angle; and second, to maintain the structural integrity during deformation and avoid fracture due to stress concentration.

[0035] Specifically, the cross-section of connecting bridge 4 is flat, with its width (e.g., 300 micrometers) significantly greater than its thickness (i.e., the overall thickness of the carrier mesh, e.g., 100-300 micrometers). This flat design has the following technical advantages: When torsional deformation is required around the A axis of the sample rod, the flat strip-shaped connecting bridge (4) has low torsional stiffness along its length, making it easy to manually apply torque to achieve torsion; while when warping deformation is required around the B axis of the sample rod, the bending stiffness of its flat surface is also optimized, ensuring both plastic bending and avoiding excessive softness that could lead to unstable sample position.

[0036] One end of the connecting bridge 4 is connected to the inner wall of the carrier substrate 1, while the other end is provided with a clamping area 5. This clamping area 5 is specifically designed to provide a point of leverage for manipulating tools (such as tweezers). Compared to the slender connecting bridge 4, the width of the clamping area 5 is the same as or slightly wider than that of the connecting bridge 4, but its geometric features make it easily identifiable by the naked eye or low-power microscope, facilitating stable clamping by operators when manually adjusting deformation and preventing slippage or accidental damage to the sample.

[0037] Furthermore, the end of the clamping area 5 extends to form a welding area 6. This welding area 6 is the only connection point between the mesh and the sample to be observed. Since the welding area 6 is located at the end of the clamping area 5, that is, the farthest end of the entire mesh, its position is near the center region of the space defined by the mesh substrate 1 and the connecting bridge 4. When the mesh substrate 1 is mounted on the sample stage, the welding area 6 is exactly within the electron beam observation field of the transmission electron microscope.

[0038] The dimensions of welding zone 6 need to balance the convenience of welding operations with the cleanliness of the observation field. The welding zone is a raised structure formed at the center of the distal end of the clamping area, on which the sample is welded.

[0039] Preferably, the welding area 6 extends from the clamping area 5 by approximately 150 micrometers in length and approximately 100 micrometers in width.

[0040] The welding area 6 extends beyond the clamping area 5, ensuring a sufficient safety distance between the welding tool and the clamping area 5 when the sample is welded to the welding area 6 using a focused ion beam. This prevents accidental damage to the clamping area 5 or the connecting bridge 4 due to insufficient operating space. Simultaneously, the welding area 6 itself is small in size, preventing additional obstruction or scattering interference to the electron beam during transmission electron microscopy observation. This ensures that only the sample area is penetrated by the electron beam, thereby improving imaging quality. Furthermore, since the welding area 6 and the clamping area 5 are structurally distinct, when the operator applies force to the connecting bridge 4 through the clamping area 5 to achieve plastic deformation, the welding area 6 itself does not directly bear the clamping force. This effectively protects the micron-sized sample welded to it, preventing accidental drop or contamination.

[0041] This embodiment achieves a balance between deformation operability, sample weldability, and structural stability by designing the connecting bridge 4 as a flat strip structure and setting the clamping area 5 and welding area 6 at its end in sequence, providing a reliable structural foundation for subsequent large-angle tilting adjustments.

[0042] In some embodiments, a first arc transition area 2 is provided at the connection between the connecting bridge and the carrier body, and a second arc transition area 3 is provided at the connection between the connecting bridge and the clamping area.

[0043] Specifically, the first arc transition zone 2 is located at the junction of the root of the connecting bridge 4 and the inner wall of the carrier substrate 1. Since the connecting bridge 4 needs to withstand torsional or warping deformation during manual operation, its root is often the area with the highest stress concentration. By designing the connection as a smooth arc transition structure, stress concentration caused by geometric abrupt changes can be effectively avoided, preventing cracks or even breakage at the root during repeated bending or torsion.

[0044] Preferably, the radius of the first arc transition zone 2 is set to 100 micrometers. This value can provide sufficient stress dispersion while taking into account the overall size limitation of the carrier net.

[0045] The second arc transition zone 3 is located at the connection between the connecting bridge 4 and the clamping area 5. The clamping area 5 is the direct force application point for the operating tweezers. When torque or bending force is applied to the connecting bridge 4 through the clamping area 5, the junction between the end of the connecting bridge 4 and the clamping area 5 also bears a large alternating stress. By setting the second arc transition zone 3, sharp geometric corners at this location can be avoided, thereby distributing the stress evenly to the end area of ​​the connecting bridge 4. This not only protects the structural integrity of the connecting bridge 4 itself, but also indirectly protects the welding area 6 located at the end of the clamping area 5, preventing sample damage due to breakage at the connection.

[0046] This embodiment significantly improves the mechanical properties and fatigue life of the connecting bridge 4 by setting a first arc transition zone 2 and a second arc transition zone 3 at both ends of the connecting bridge 4 with a simple structural improvement, providing an important guarantee for the reusability of the carrier net and precise angle adjustment.

[0047] In some embodiments, the carrier mesh is an integrally molded structure made of materials such as copper, aluminum, nickel, and molybdenum.

[0048] Example 1 A carrier for preparing transmission electron microscopy samples using focused ion beam is disclosed. The carrier has an overall ring structure that is more than semi-circular and is integrally formed from a metal material with a thickness of 200 micrometers. The specific structure includes a carrier substrate 1, a connecting bridge 4, a clamping area 5, and a welding area 6.

[0049] The mesh substrate 1 serves as the supporting base for the entire mesh. Its shape matches the standard sample stage of the transmission electron microscope, and it is used to stably mount the mesh in the sample stage of the sample rod. The mesh substrate 1 has a semi-annular structure with an outer diameter of 3 mm, an inner diameter of 2.1 mm, and a central angle of 200° corresponding to the semi-annular shape.

[0050] The connecting bridge 4 is a flat strip structure, with one end connected to the inner wall of the carrier substrate 1 and the other end extending along the A-axis of the sample rod. The connecting bridge 4 is 570 micrometers long, 300 micrometers wide, and its thickness is the same as the overall thickness of the carrier substrate, i.e., 200 micrometers. A first arc transition zone 2 is provided at the connection between the connecting bridge 4 and the carrier substrate 1. The radius of the arc of this transition zone is 100 micrometers, which is used to disperse the stress concentration at the root of the connecting bridge 4 and prevent cracks from initiating during repeated bending or torsion.

[0051] A clamping area 5 is located at the end of the connecting bridge 4 and is integrally connected to it. The clamping area 5 is 800 micrometers long and 300 micrometers wide, larger than the connecting bridge 4, allowing operators to clearly identify and stably clamp it when using tweezers. The design of the clamping area 5 allows operators to apply torque or bending force to the connecting bridge 4, thereby achieving plastic deformation of the connecting bridge 4. A second arc transition area 3 is provided at the connection between the connecting bridge 4 and the clamping area 5. This transition area also has a radius of 100 micrometers and is used to disperse stress concentration at this location, protecting the structural integrity of the end of the connecting bridge 4 and the clamping area 5.

[0052] The welding zone 6 is located at the end of the clamping zone 5, extending 150 micrometers in length and 100 micrometers in width from the clamping zone 5.

[0053] In this embodiment, the entire carrier grid is made of pure copper, a material with good ductility, and has a thickness of 200 micrometers. Copper has good plasticity and conductivity, which facilitates the plastic deformation of the connecting bridge 4 and can effectively conduct the charge on the sample surface, avoiding the charging effect during transmission electron microscopy observation.

[0054] The deformation of this carrier network includes two types: The first type is twisting deformation along axis A; See Figure 3 By clamping the clamping area 5 with tweezers, the intermediate connecting bridge area 4 is plastically twisted by 45 degrees, while the sample remains basically in the center of the carrier net. After the sample is put back in, if the connecting bridge area 4 remains roughly parallel to the A-axis of the sample rod, it is equivalent to increasing the rotation angle of the A-axis of the sample by 45 degrees.

[0055] The second type is warping deformation along the B-axis; See Figure 4 By clamping the clamping area 5 with tweezers, the connecting bridge 4 is plastically tilted up by 45 degrees, while the sample remains basically in the center of the carrier. After the sample is put back in, if the connecting bridge area 4 remains roughly parallel to the A-axis of the sample rod, it is equivalent to increasing the rotation angle of the B-axis of the sample by 45 degrees.

[0056] Compared to existing focused ion beam cutting carriers, the carrier provided in this embodiment, firstly, by setting a dedicated connecting bridge 4 between the carrier substrate 1 and the clamping area 5, confines the plastic deformation area within this slender strip structure. Its geometric dimensions (570 micrometers in length and 300 micrometers in width) ensure that when the operator applies force through the clamping area 5, deformation only occurs at the connecting bridge 4, thereby achieving precise control of the sample tilt angle and solving the problem of difficulty in controlling the deformation area when bending the entire carrier in the prior art. Secondly, the length and flat strip structure design of the connecting bridge 4 enable it to achieve torsional deformation or warping exceeding 45°. The deformation is much greater than the small tilt angle that can be achieved by bending the entire carrier mesh in existing technologies, effectively breaking through the mechanical tilting limitations of the transmission electron microscope sample rod, and is especially suitable for adjusting the zone axis orientation of low-symmetry crystal materials. Finally, the welding area 6 and the clamping area 5 are clearly distinguished in structure. When force is applied to the connecting bridge 4 through the clamping area 5, the welding area 6 itself does not directly bear the clamping force. In addition, the design of the welding area 6 extending out of the clamping area 5 keeps the operating tool at a safe distance from the sample, thereby effectively protecting the micron-sized sample welded to it and avoiding the problem of the sample being easily knocked off or contaminated by directly bending the carrier mesh in existing technologies.

[0057] Example 2 A sample rod having a sample stage in which the carrier net described in Example 1 is disposed.

[0058] The sample rod includes a rod body and a sample stage disposed at the front end of the rod body. The sample stage has a circular groove with a diameter of 3 mm that matches the carrier substrate 1 in Example 1, for accommodating and fixing the carrier. The inner wall of the groove of the sample stage forms a surface contact fit with the semi-circular outer edge of the carrier substrate 1.

[0059] The above content is only for illustrating the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of the claims of this invention.

Claims

1. A grid for preparing transmission electron microscopy samples using focused ion beam, characterized in that, This includes the carrier substrate, connecting bridges, and welding areas; The carrier substrate is used to cooperate with the transmission electron microscope sample stage and is installed in the sample stage of the sample rod; One end of the connecting bridge is connected to the carrier substrate, and the other end extends along the A-axis of the sample rod; The welding area is located at the other end of the connecting bridge and is used to connect the observation sample; The connecting bridge is capable of plastic deformation to compensate for the observation angle of the sample; The plastic deformation of the connecting bridge includes: a first deformation of torsion about the A axis of the sample rod, and / or a second deformation of warping about the B axis of the sample rod.

2. The grid for preparing transmission electron microscopy samples using focused ion beam according to claim 1, characterized in that, The shape of the carrier substrate matches the sample stage, and it has a semi-circular outer surface with a central angle greater than 180°.

3. The grid for preparing transmission electron microscopy samples using focused ion beam according to claim 1, characterized in that, The connecting bridge is a flat strip structure, the width of which is greater than the thickness of the carrier net.

4. The grid for preparing transmission electron microscopy samples using focused ion beam according to claim 1, characterized in that, The other end of the connecting bridge is provided with a clamping area, the width of which is greater than or equal to the width of the connecting bridge.

5. A grid for preparing transmission electron microscopy samples using focused ion beam, as described in claim 4, characterized in that, The welding area is located at the end of the clamping area, and the width of the welding area is smaller than the width of the clamping area.

6. A grid for preparing transmission electron microscopy samples using focused ion beam according to claim 4, characterized in that, A first arc transition zone is provided at the connection between the connecting bridge and the carrier substrate, and a second arc transition zone is provided at the connection between the connecting bridge and the clamping area.

7. A grid for preparing transmission electron microscopy samples using focused ion beam according to claim 1, characterized in that, The carrier net is integrally formed from metal material.

8. A grid for preparing transmission electron microscopy samples using focused ion beam, as described in claim 7, characterized in that, The metallic material is one of copper, aluminum, nickel, or molybdenum.

9. A grid for preparing transmission electron microscopy samples using focused ion beam according to any one of claims 1-8, characterized in that, The outer diameter of the carrier substrate is 3 mm, and the inner diameter is 2.1 mm; The connecting bridge has a length of 570 micrometers and a width of 300 micrometers; The clamping area has a length of 800 micrometers and a width of 300 micrometers; The welding area extends 150 micrometers beyond the clamping area and has a width of 100 micrometers; The radius of the arc of the first and second arc transition regions is 100 micrometers. The thickness of the carrier mesh is 100-300 micrometers.

10. A transmission electron microscope sample holder, characterized in that, It includes a rod body and a sample stage disposed at the front end of the rod body, wherein the sample stage is provided with a carrier net as described in any one of claims 1 to 9.

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