Ion implanter

Abstract

This invention provides an ion implanter. [Solution] The ion implanter includes an ion source, a linear multipole module, an ion beam shape adjustment module, and an analyzer magnet unit. The linear multipole module is installed between the ion source and the substrate. The ion beam shape adjustment module is installed between the ion source and the linear multipole module. The analyzer magnet unit is installed between the ion source and the linear multipole module, with the ion beam shape adjustment module installed in front of the inlet of the analyzer magnet unit and the linear multipole module installed behind the outlet of the analyzer magnet unit. The ion beam shape adjustment module can be used to adjust the ion beam to change the ion beam divergence angle at which the ion beam enters the substrate.

Description

Technical Field

[0001] The present invention relates to an ion implanter, and more particularly to an ion implanter capable of adjusting the height of an ion beam.

Background Art

[0002] In the field of semiconductor manufacturing, precise control of the parameters of an ion beam has a crucial impact on ion implantation into a substrate. After the ion beam is emitted from the arc-shaped slit of the ion source, if the height of the ion beam is insufficient, the substrate area (region) cannot be effectively covered. Therefore, it is necessary to adjust the height of the ion beam so that the ion beam completely covers the surface of the substrate. Generally speaking, an ion implanter can change the height or width covered by the ion beam by generating a magnetic field to adjust the divergence of the ion beam.

[0003] However, existing equipment solves the problem of insufficient height covered by the ion beam due to the magnetic field, but inevitably causes another problem, namely, the problem that the divergence angle of the ion beam increases. The divergence angle of the ion beam is related to the components perpendicular and parallel to the substrate in the traveling direction of the ion beam. When the ion beam has a relatively large divergence angle, a difference in implantation depth may occur in different regions of the substrate. Specifically, this phenomenon appears in the ion beam at the center of the substrate, where the component of the traveling speed perpendicular to the substrate is relatively large, which may lead to a relatively deep implantation depth. In contrast, the ion beam at the edge of the substrate may have a relatively shallow implantation depth because the component of the traveling speed perpendicular to the substrate is relatively small. Such a depth difference poses a problem of ensuring uniformity in the substrate manufacturing process.

Summary of the Invention

Problems to be Solved by the Invention

[0004] In view of the above, an object of the present invention is to provide an ion implanter for processing a substrate. Means for Solving the Invention

[0005] The ion implanter includes an ion source, a linear multipole module, an ion beam shape adjustment module, and an analyzer magnetic unit. The ion source is used to generate an ion beam. The linear multipole module is placed between the ion source and the substrate and is used to diverge the ion beam. The ion beam shape adjustment module is placed between the ion source and the linear multipole module. The analyzer magnetic unit is placed between the ion source and the linear multipole module, with the ion beam shape adjustment module positioned in front of the inlet of the analyzer magnetic unit and the linear multipole module positioned behind the outlet of the analyzer magnetic unit. Of these, the ion beam shape adjustment module may be used to adjust the ion beam, thereby changing the ion beam divergence angle at which the ion beam enters the substrate. [Brief explanation of the drawing]

[0006] [Figure 1] This figure shows an ion implanter according to the first embodiment. [Figure 2] This figure shows the operating state of an ion beam profiler in several examples. [Figure 3A] This figure shows the height coverage area (range) of the ion beam in several examples. [Figure 3B] This figure shows the divergence angles of an ion beam in different axial directions according to several examples. [Figure 4] This is a top view of the angle measurement Faraday cup of an ion beam profiler in several examples. [Figure 5A] This figure shows the central angle of the ion beam in several examples. [Figure 5B] This figure shows the divergence angle of an ion beam in several examples. [Figure 6] This figure shows an ion implanter according to the second embodiment. [Figure 7] This figure shows an ion beam shape adjustment module according to several examples. [Figure 8] This figure shows multiple magnetic field measurement points between ion beam shape adjustment modules according to several embodiments. [Figure 9] This is a three-dimensional view of a vacuum cavity according to the third embodiment. [Figure 10] This is a front view of the vacuum cavity according to the third embodiment. [Figure 11] This is a three-dimensional diagram of an ion beam shape adjustment module according to the third embodiment. [Figure 12] This is a front view of an ion beam shape adjustment module according to the third embodiment. [Figure 13] This is a top view of an ion beam shape adjustment module according to the third embodiment. [Figure 14] This is a three-dimensional view of the driver of the ion beam shape adjustment module according to the third embodiment. [Figure 15] This is a three-dimensional view of the vacuum cavity according to the fourth embodiment. [Figure 16] This is a front view of the vacuum cavity according to the fourth embodiment. [Figure 17] This is a front view of the driver of the ion beam shape adjustment module according to the fourth embodiment. [Modes for carrying out the invention]

[0007] In this specification, when the terms “includes,” “comprehensible,” or “having,” they may further include other elements, assemblies, structures, regions, components, devices, systems, steps, connections, etc., and should not exclude other specifications unless otherwise specified. When the terms “top,” “top,” “bottom,” “bottom,” “left,” “right,” “inside,” “outside,” “near,” and “far,” they are used solely to describe the technical content or relative relationships of embodiments of the present invention and, unless otherwise specified, are not used to limit the scope of the present invention. Therefore, any adjustment, exchange, or modification of relative positions and relationships should be included in the claims of the present invention, provided that it does not substantially alter the technical content of the present invention. When the terms “first,” “second,” etc., are used solely to describe or distinguish specifications such as elements, assemblies, structures, regions, components, devices, systems, etc., and do not limit the scope of the present invention or the spatial order of these specifications. Furthermore, unless otherwise specified, the singular term "one" in this specification also applies to plural usage scenarios, and terms such as "or" and "and / or" can be used interchangeably.

[0008] Figure 1 shows an ion implanter according to the first embodiment. Refer to Figure 1. In this embodiment, the ion implanter 10' includes an ion source 11, an analyzer magnet unit 13, and a linear multipole module 14. The ion implanter 10' is used to process a substrate 91, for example, in the ion implantation manufacturing process of wafers. The linear multipole module 14 is installed between the ion source 11 and the substrate 91, and the analyzer magnet unit 13 is installed between the ion source 11 and the linear multipole module 14.

[0009] An ion source 11 is used to generate a charged ion beam I, which contains ions of the element to be implanted into the substrate 91. The ion beam I generated by the ion source 11 passes through an arc-shaped slit 111 and is injected into the substrate 91. An analyzer magnet unit 13 (AMU) can analyze the target implanted ions by separating elements of different valence and mass (e.g., isotopes) ionic components within the charged ion beam I using a magnetic field. To effectively separate the ion beam I, the analyzer magnet unit 13 needs to provide the ion beam I with a relatively long travel distance. A linear multipole module 14 (LMP) may include an electromagnet array consisting of multiple coils, which can generate a magnetic field to change the direction of travel of the charged ion beam I, thereby achieving an effect similar to the focusing or divergence of a lens. This allows the ion implanter 10' to be used to adjust the height of the ion beam I. More specifically, in some embodiments, the charged ion beam I generated by the ion source 11 is a ribbon beam, which has an ion beam width and an ion beam height. In these embodiments, the ion beam width refers to the distribution width of the ribbon beam along the coordinate axis X, and the ion beam height refers to the distribution width of the ribbon beam along the coordinate axis Y, with the distribution width along the coordinate axis Y being greater than the distribution width along the coordinate axis X. The ion implanter 10' can increase the ion beam height by causing the ribbon beam to diverge along the coordinate axis Y. For clarity, in other embodiments, the ion beam height may refer to the distribution width of the ribbon beam along another axis (e.g., the coordinate axis X).

[0010] In Figure 1, the arc-shaped slit 111 has a curvature R and a slit height H, which causes the emitted ion beam I to have an initial divergence angle. The height of the ion beam when it reaches the inlet 131 of the analyzer magnet unit 13 is positively correlated with the curvature R and slit height H of the arc-shaped slit 111, and also positively correlated with the distance D1 between the arc-shaped slit 111 and the inlet 131 of the analyzer magnet unit 13. In other words, the larger the slit height H of the arc-shaped slit 111, the larger the curvature R, or the longer the distance D1, the higher the height of the ion beam I when it reaches the inlet 131 of the analyzer magnet unit 13.

[0011] Furthermore, since the ion beam I travels a relatively long distance D2 inside the analyzer magnet unit 13, in this embodiment, the height of the ion beam I when it enters the inlet 131 of the analyzer magnet unit 13 is 110 mm, the distance the ion beam I travels through inside the analyzer magnet unit 13 is D2, the distance it travels from the outlet 132 of the analyzer magnet unit 13 to the linear multipole module 14 is D3, and the height of the ion beam increases to 240 mm after reaching the linear multipole module 14.

[0012] Subsequently, the linear multipole module 14 causes the ion beam I to diverge using a magnetic field, so that the height of the ion beam I in this embodiment increases from 240 mm before entering the linear multipole module 14 to 320 mm when it reaches the substrate 91. The height of the ion beam I when it leaves the linear multipole module 14 is related to the divergence angle θy and the travel distance D4, that is, the height of the ion beam when it enters the linear multipole module 14 (i.e., 240 mm in this embodiment), plus twice the product of the tangent value of the divergence angle θy and the travel distance D4, which corresponds to the height of the ion beam when it reaches the substrate 91 (i.e., 320 mm in this embodiment). As the height of the ion beam I increases, the area over which the ion beam I covers the substrate 91 increases. However, due to limitations in the space, processing range, and vacuum maintenance costs of semiconductor manufacturing plants, the space within the ion implanter 10' cannot be sufficiently expanded to increase the travel distance of the ion beam I from the linear multipole module 14 to the substrate 91. Therefore, how effectively the limited space within the ion implanter 10' is utilized and how effectively the divergence angle θy of the ion beam is adjusted is key to adjusting the height of the ion beam I and increasing the area covered by the ion beam I.

[0013] Figure 2 shows the operating state of an ion beam profiler in several embodiments. Refer to Figures 1 and 2 together. In some embodiments, the ion beam profiler 92 is installed in front of the substrate 91 and can scan the ion beam I by moving along the coordinate axis Y direction. In this embodiment, the ion beam profiler 92 includes three types of Faraday cups: a one-dimensional ion beam profile Faraday cup 921, a two-dimensional ion beam profile Faraday cup 922, and an angle-measuring Faraday cup 923. The ion beam profiler 92 may have multiple angle-measuring Faraday cups 923, for example, three angle-measuring Faraday cups 923 in this embodiment.

[0014] The one-dimensional ion beam profile Faraday cup 921 of the ion beam profiler 92 can be used to measure the range covered by the ion beam I. To facilitate the understanding of the subsequent technical content, first, the measurement method of the coverage area and divergence angle of the height of the ion beam I will be described below.

[0015] FIG. 3A is a diagram showing the coverage area of the height of an ion beam according to several embodiments. Referring to FIGS. 1 and 3A together. The horizontal axis in FIG. 3A represents the vertical coordinate position of the path through which the major axis of the surface scanning ion beam current of the ion beam profiler 92 passes, and the vertical axis represents the uniformity of the ion beam I, that is, the ratio of the average current value measured by the ion beam profiler 92 in response to the irradiation of the ion beam I within a specific local sampling range to the average current value measured by the ion beam profiler 92 in response to the irradiation of the ion beam I within the entire sampling range. The uniformity of the ion beam I received by the substrate 91 can be estimated by the magnitude of this ratio value. The origin position in FIG. 3A corresponds to the center of the substrate 91. In this embodiment, the ion beam profiler 92 scans and samples the ion beam I along the coordinate axis Y (for example, sampling is performed at 200 scanning positions at a traveling distance of 380 mm), and the uniformity of the ion beam I is expected to be generally close to 1 or equal to 1 for the uniformity values of the ion beam corresponding to each position of the substrate 91. In the case of the manufacturing process of a 12-inch wafer, the height of the ion beam must cover the diameter A of the substrate, that is, it needs to be at least greater than 305 mm. In FIG. 3A, taking the diameter A of a 12-inch substrate as an example, it can be observed that the uniformity of the ion beam clearly decreases after the vertical coordinate position exceeds ±140 mm. When adjusting the height of the ion beam, it is necessary to consider the influence of the divergence angle θy of the ion beam. Specifically, although the uniformity of the ion beam I at the center and edge of the substrate 91 is all close to 1 or equal to 1, the ion beam I irradiated at the center of the substrate 91 has a relatively large component perpendicular to the substrate 91 in its traveling direction, so it causes a relatively deep implantation depth. Also, the ion beam I irradiated at the edge of the substrate 91 has a relatively small component perpendicular to the substrate 91 in its traveling direction, so it results in a relatively shallow implantation depth. This phenomenon becomes more prominent when the divergence angle θy of the ion beam is too large.

[0016] Figure 3B shows the divergence angles of an ion beam in different axial directions according to several embodiments. Refer to Figure 1 and Figure 3B together. In Figure 3B, the horizontal axis represents the divergence angle of ion beam I along the coordinate axis X, and the vertical axis represents the divergence angle of ion beam I along the coordinate axis Y. In this embodiment, ion beam I is a band-shaped ion beam, which has a relatively large divergence angle along the coordinate axis Y. The angle measuring Faraday cup 923 of the ion beam profiler 92 can be used to measure the divergence angle of ion beam I.

[0017] Figure 4 is a top view of the angle measuring Faraday cups of an ion beam profiler according to several embodiments. Figure 5A is a diagram showing the central angle of an ion beam according to several embodiments. Refer to Figures 4 and 5A together. In this embodiment, the ion beam profiler 92 includes three angle measuring Faraday cups 923 for measuring the divergence angle of the ion beam, each of which has a hollow interior, and the ion beam I enters the cavity through a slit at the top of the ion beam angle measuring Faraday cup 923. The aforementioned cavity has a height h, and the aforementioned slit has a width d. At the bottom of the angle measuring Faraday cup 923, in the X-axis direction, there are sequentially the left sensor 923b, the center sensor 923a, and the right sensor 923c, and similarly, in the Y-axis direction, there are sequentially the upper sensor 923d, the center sensor 923a, and the lower sensor 923e. The central sensor 923a generates a central sensor current value Ic in response to irradiation by ion beam I, the left sensor 923b generates a left sensor current value Ix+ in response to irradiation by ion beam I, the right sensor 923c generates a right sensor current value Ix- in response to irradiation by ion beam I, the upper sensor 923d generates an upper sensor current value Iy+ in response to irradiation by ion beam I, and the lower sensor 923e generates a lower sensor current value Iy- in response to irradiation by ion beam I. As shown in Figure 5A, the lower sensor 923e is not irradiated by ion beam I (Iy- is 0), and ion beam I passes through the slit at the top, enters the cavity of the ion beam angle measuring Faraday cup 923, is deflected, and irradiates the upper sensor 923d. The central angle θc1 of the ion beam in the coordinate axis Y direction can be expressed as shown in formula 1 below.

[0018]

number

[0019] Figure 5B shows the divergence angles of ion beams in several examples. Refer to Figure 5B. The divergence angle θy of the ion beam can be expressed as follows.

[0020] θc1-θc2 (Formula 2) The central angle θc1 of the ion beam represents the average angle of the direction of propagation of the ion beam I measured within a local range. For example, it is the average of the measurements taken from the three angle measurement Faraday cups 923 in Figure 2. The central angle θc2 of the ion beam is the average value of the central angles of the ion beam at each of the 200 scanning positions measured by the ion beam profiler 92. Therefore, the calculation of the ion beam divergence angle θy is done by subtracting the total central angle θc2 of the ion beam from the central angle θc1 of the ion beam within the local range. By measuring the ion beam divergence angle θy, it is possible to determine whether the difference between the divergence angle θy of the ion beam I at the center of the substrate 91 and the divergence angle θy of the ion beam at the edge of the substrate 91 is too large, resulting in uneven injection depth. Taking Figure 1 as an example, due to the limitation of the ion beam I's propagation distance between the linear multipole module 14 and the substrate 91, the linear multipole module 14 needs to adjust the ion beam I so that it covers the entire area of ​​the substrate 91 by implanting ions using a relatively large ion beam divergence angle θy. However, the following was discovered: In this method, the implantation depth at the center and edges of the substrate 91 is often uneven in the manufacturing process of large wafers, which may mean that the edge portion of the substrate 91 cannot be continuously used in subsequent manufacturing processes.

[0021] Figure 6 shows an ion implanter according to the second embodiment. Refer to Figure 6. In this embodiment, the ion implanter 10' includes an ion source 11, an ion beam shape adjustment module 12, an analyzer magnet unit 13, and a linear multipole module 14. The linear multipole module 14 is installed between the ion source 11 and the substrate 91, the analyzer magnet unit 13 is installed between the ion source 11 and the linear multipole module 14, and the ion beam shape adjustment module 12 is installed between the ion source 11 and the analyzer magnet unit 13.

[0022] In Figure 6, the ion beam I emitted from the arc-shaped slit 111 has an initial divergence angle, and the ion beam shape adjustment module 12 widens the on-beam divergence angle θy before allowing the on-beam to enter the analyzer magnet unit 13. Since the analyzer magnet unit 13 has a relatively long travel distance, the height of the ion beam in this embodiment increases from 145 mm when it enters the inlet 131 of the analyzer magnet unit 13 to 300 mm when it leaves the inlet 131 of the analyzer magnet unit 13. The linear multipole module 14 diverges the ion beam I with a magnetic field, increasing the height of the ion beam from 300 mm before it enters the linear multipole module 14 to 320 mm when it reaches the substrate 91. Referring together to Figures 1 and 6, the ion beam shape adjustment module 12 only increases the height of the ion beam from 110 mm at the inlet 131 of the analyzer magnet unit 13 in Figure 1 to 145 mm in Figure 6. However, due to the synergistic effect of the relatively long travel distance of the analyzer magnet unit 13, the height of the ion beam increases from 240 mm at the outlet 132 of the analyzer magnet unit 13 in Figure 1 to 300 mm in Figure 6. As a result, the linear multipole module 14 can cover the range of the substrate diameter A by simply fine-tuning the divergence angle θy of the ion beam. It should be noted that the ion beam heights shown in Figures 1 and 6 are for the purpose of comparing different embodiments only and do not limit the height of the ion beam generated by the ion beam shape adjustment module 12.

[0023] Figure 7 shows an ion beam shape adjustment module according to several embodiments. Refer to Figures 6 and 7 together. In Figure 6, the coordinate axis Z (left-right direction on the paper) represents the direction of central propagation of the ion beam I, the coordinate axis X (inlet-out direction on the paper) represents the left-right direction of the ion implanter 10', and the coordinate axis Y (up-down direction on the paper) represents the up-down direction of the ion implanter 10'. Therefore, Figure 7 corresponds to a state in which an observer stands at the position of the arc-shaped slit 111 and observes the ion beam I irradiating the substrate 91; that is, the ion beam I shown in Figure 7 is incident on the paper. The ion beam shape adjustment module 12 includes an upper magnet pair 121 and a lower magnet pair 122. The upper magnet pair 121 includes a first upper magnet 1211 and a second upper magnet 1212, and the lower magnet pair 122 includes a first lower magnet 1221 and a second lower magnet 1222. The first upper magnet 1211, the second upper magnet 1212, the first lower magnet 1221, or the second lower magnet 1222 may each be a single magnet or a magnet unit consisting of multiple magnets, and as shown in Figure 7, each magnet unit contains two magnets. In some embodiments, the first upper magnet 1211, the second upper magnet 1212, the first lower magnet 1221, and the second lower magnet 1222 are permanent magnets, and the magnitude (strength) of the magnetic field between the magnet pairs can be adjusted by adjusting the number of magnets in the magnet unit or the distance D between the magnet pairs.

[0024] As shown in Figure 7, a first magnetic field B1 is formed between the upper magnet pair 121, and a second magnetic field B2 is formed between the lower magnet pair 122. The direction of propagation of the ion beam I (coordinate axis Z; direction of entry and exit from the paper) is perpendicular to the first magnetic field B1 or the second magnetic field B2 (coordinate axis X; direction of left and right from the paper). The upper part of the ion beam I passes through the gap between the upper magnet pair 121 and is mainly affected by the first magnetic field B1, while the lower part of the ion beam I passes through the gap between the lower magnet pair 122 and is mainly affected by the second magnetic field B2. To diverge the ion beam I, the ion beam shape adjustment module 12 can be configured so that an upward magnetic component of the ion beam I is generated by the first magnetic field B1, and a downward magnetic component of the ion beam I is generated by the second magnetic field B2. In this embodiment, ion beam I is a positive ion beam with positively charged ions attached, the first magnetic field B1 is directed from right to left in the direction of propagation of the positive ion beam (inbound / outbound direction of the paper), that is, the magnetic pole N of the second upper magnet 1212 is directed toward the magnetic pole S of the first upper magnet 1211, and the second magnetic field B2 is directed from left to right in the direction of propagation of the positive ion beam, that is, the magnetic pole N of the first lower magnet 1221 is directed toward the magnetic pole S of the second lower magnet 1222. According to the Lorentz law, the upper part of ion beam I is subjected to a magnetic force in the positive direction of the coordinate axis Y, and the lower part of ion beam I is subjected to a magnetic force in the negative direction of the coordinate axis Y, so ion beam I diverges along the Y axis.

[0025] The degree of divergence of the ion beam I is affected by the first magnetic field B1 and the second magnetic field B2, and more precisely, the degree of divergence is related to the magnetic flux within a specific spatial surface range through which the ion beam I passes. Figure 8 shows multiple magnetic field measurement points between ion beam shape adjustment modules according to several embodiments. Table 1 is a record table of Gaussian values ​​for each magnetic field measurement point in the embodiments shown in Figure 8 (at the end of this specification). Refer to Figure 8 and Table 1 together. In this embodiment, the ion beam shape adjustment module 12 includes a left arm 123 and a right arm 124, with the first upper magnet 1211 fixed to the upper end of the left arm 123, the second lower magnet 1222 fixed to the lower end of the left arm 123, the second upper magnet 1212 fixed to the upper end of the right arm 124, and the first lower magnet 1221 fixed to the lower end of the right arm 124. By adjusting the distance D between the left arm 123 and the right arm 124, the magnetic flux at each spatial point between the magnet pairs can be affected. For example, when the distance D between the magnet pairs is 202 mm, the Gaussian value at measurement point L1, which is relatively close to the first upper magnet 1211, is 320, and the Gaussian value at measurement point C1, which is relatively far from the first upper magnet 1211, is 118. When the distance D between the magnet pairs is reduced to 162 mm, the Gaussian value at measurement point L1, which is relatively close to the first upper magnet 1211, is 937, an increase of 293%, and the Gaussian value at measurement point C1, which is relatively far from the first upper magnet 1211, is 259, an increase of 219%. Thus, the degree of divergence of the ion beam I increases with decreasing distance D between the magnet pairs. However, referring again to Figure 6, after the ion beam I passes through the ion beam shape adjustment module 12, the ion beam I begins to diverge, and the divergence angle θy of the ion beam at the substrate 91 decreases, resulting in a more uniform ion implantation depth in the substrate 91.

[0026] Table 2 shows the effect of changing the magnet spacing D on the Y-axis divergence angle of the ion beam I in examples of different manufacturing processes. In these examples, Table 2 shows three manufacturing processes in which boron is used and ion implantation is performed at different implantation energies of 5KeV, 8KeV, and 20KeV. The Y-axis divergence angle θy of the ion beam represents the divergence angle θy of the ion beam I in the direction of the Y coordinate axis calculated at the substrate 91 using the formula described above. As can be seen from Table 2, when the magnet spacing D in the B5K manufacturing process is reduced from 202 mm to 162 mm, the divergence angle θy of the ion beam in the Y axis decreases from 0.89 degrees to 0.42 degrees. When the magnet spacing D in the B8K manufacturing process is reduced from 202 mm to 162 mm, the divergence angle θy of the ion beam in the Y axis decreases from 0.33 degrees to 0.20 degrees. When the magnet spacing D in the B20K manufacturing process is reduced from 202 mm to 162 mm, the divergence angle θy of the ion beam in the Y axis decreases from 0.18 degrees to 0.00 degrees. As shown in the above embodiment, when the ion beam shape adjustment module 12 increases the divergence angle θy of the ion beam by reducing the distance D between the magnet pairs, the divergence angle θy of the ion beam that needs to be adjusted at the position of the linear multipole module 14 decreases, and as a result, the divergence angle θy of the ion beam measured near the substrate 91 (at the position of the ion beam profiler 92) decreases.

[0027] Figure 9 is a three-dimensional view of the vacuum cavity according to the third embodiment. Figure 10 is a front view of the vacuum cavity according to the third embodiment. Figure 11 is a three-dimensional view of the ion beam shape adjustment module according to the third embodiment. Figure 12 is a front view of the ion beam shape adjustment module according to the third embodiment. Refer to Figures 9 to 12 together. In this embodiment, the ion beam shape adjustment module 12 is installed at the inlet 131 of the analyzer magnet unit 13, and the ion beam shape adjustment module 12 includes a vacuum cavity 127, an upper magnet pair 121, a lower magnet pair 122, a left arm 123, a right arm 124, and a driver 125. The left arm 123 and the right arm 124 are used to fix the upper magnet pair 121 and the lower magnet pair 122, and are installed inside the vacuum cavity 127. The driver 125 is coupled to the left arm 123 and the right arm 124 and is used to adjust the distance D between the left arm 123 and the right arm 124. Some assemblies of the driver 125 are located outside the vacuum cavity 127 to facilitate maintenance of the equipment. More specifically, as shown in Figure 10, the left arm 123 and the right arm 124 are located on the left and right sides of the path of the ion beam I, and there is an opening in the upper cavity wall 1271 of the vacuum cavity 127, through which the upper ends of the left arm 123 and the right arm 124 are coupled to the driver 125. To maintain the airtightness of the vacuum cavity 127, the opening in the cavity wall 1271 is covered with a sealing cover 128. In this way, the slide rail mechanism of the driver 125 is surrounded by the sealing cover 128, and the motor assembly 54 is fixed to the sealing cover 128.

[0028] Figure 13 is a top view of an ion beam shape adjustment module according to the third embodiment. Figure 14 is a three-dimensional view of the driver of the ion beam shape adjustment module according to the third embodiment. Refer to Figures 13 and 14 together. In this embodiment, the driver 125 of the ion beam shape adjustment module 12 includes a first slide rail 51, a second slide rail 52, a gear 53, and a motor assembly 54. The first slide rail 51 includes a first slider 511 and a first guide rail 512, the first slider 511 having a rack 5111. The second slide rail 52 includes a second slider 521 and a second guide rail 522, the second slider 521 having a rack 5211. In this embodiment, the first guide rail 512 and the second guide rail 522 are installed parallel to each other, and their extension direction is substantially parallel to the direction of the first magnetic field B1. In other words, the first guide rail 512 and the second guide rail 522 are configured to move the left arm 123 and the right arm 124 apart or closer to each other. Gear 53 simultaneously engages with the rack 5111 of the first slider 511 and the rack 5211 of the second slider 521. As shown in Figure 13, when gear 53 rotates clockwise, the rack 5111 of the first slider 511 is driven to move to the right, causing the first slider 511 and the left arm 123 coupled to it to move to the right. Similarly, the rack 5211 of the second slider 521 is driven to move to the left, causing the second slider 521 and the right arm 124 coupled to it to move to the left. As a result, the left arm 123 and the right arm 124 move closer to each other, and the magnetic force acting on the ion beam I increases. Conversely, when gear 53 rotates counterclockwise, the rack 5111 of the first slider 511 is driven to move to the left, causing the first slider 511 and the left arm 123 coupled to it to move to the left. The rack 5211 of the second slider 521 is driven to move to the right, causing the second slider 521 and the right arm 124 coupled to it to move to the right. As a result, the left arm 123 and the right arm 124 move away from each other, and the magnetic force acting on the ion beam I decreases.

[0029] As shown in Figure 13, in this embodiment, the rolling (rotation) of the gear 53 is driven by a motor assembly 54, which is fixed to the outside of the vacuum cavity 127, and the rotating shaft of the motor assembly 54 passes through the sealing cover 128 and is fixedly connected to the gear 53. The motor assembly 54 in this embodiment includes a variable resistor 541, a worm gear assembly 542, a magnetic fluid bearing 543, and a drive motor 544. The drive motor 544 is used to generate torque, and the worm gear assembly 542, in response to the drive of the drive motor 544, changes the direction of the torque to correspond to the axial direction of the gear 53. The magnetic fluid bearing 543 is used to seal the opening on the sealing cover 128, which is advantageous for the rotating shaft of the motor assembly 54 to extend from the outside of the vacuum cavity 127 into the inside of the vacuum cavity 127. The magnetic fluid bearing 543 can also provide smooth rotation of the rotating shaft. The variable resistor 541 is used to measure the rotation angle of the rotating shaft, thereby allowing the travel distance of the left arm 123 and the right arm 124, and the distance D between them, to be estimated.

[0030] Figure 15 is a three-dimensional view of the vacuum cavity according to the fourth embodiment. Figure 16 is a front view of the vacuum cavity according to the fourth embodiment. Refer to Figures 15 and 16 together. In this embodiment, the ion beam shape adjustment module 12 is installed at the inlet 131 of the analyzer magnet unit 13, and the ion beam shape adjustment module 12 includes a vacuum cavity 127, an upper magnet pair 121, a lower magnet pair 122, a left arm 123, a right arm 124, and a drive unit 126. The left arm 123 and the right arm 124 are used to fix the upper magnet pair 121 and the lower magnet pair 122 and are installed inside the vacuum cavity 127. The drive unit 126 is coupled to the left arm 123 and the right arm 124 and is used to adjust the distance D between the left arm 123 and the right arm 124. A part of the assembly of the drive unit 126 is installed outside the vacuum cavity 127. More specifically, as shown in Figure 16, the left arm 123 and the right arm 124 are installed on the left and right sides of the path of the ion beam I, and there is an opening in the upper cavity wall 1271 of the vacuum cavity 127, and the upper ends of the left arm 123 and the right arm 124 are coupled to the driver 126 through the opening. In order to maintain the airtightness of the vacuum cavity 127, the opening in the cavity wall 1271 is covered by a sealing cover 128. At least one difference between this embodiment and the third embodiment is that in this embodiment the guide rail structure is installed on the outside of the vacuum cavity 127, which is advantageous for equipment maintenance and also prevents structural damage caused by interference with the mechanism by the ion beam I, as well as the generation of free-floating particles in the vacuum cavity 127.

[0031] Figure 17 is a front view of the driver of the ion beam shape adjustment module according to the fourth embodiment. Refer to Figure 17. In this embodiment, the driver 126 of the ion beam shape adjustment module 12 includes a first slide 61, a second slide 62, a screw 63, and a motor assembly 64. The first slide 61 includes a first pulley 611 and a first connecting rod 612, the first pulley 611 being coupled to the first connecting rod 612 and having a screw hole 6111, the first connecting rod 612 passing through a vacuum cavity 127 and being fixed to the left arm 123. The second slide 62 includes a second pulley 621 and a second connecting rod 622, the second pulley 621 being coupled to the second connecting rod 622 and having a screw hole 6211, the second connecting rod 622 passing through a vacuum cavity 127 and being fixed to the right arm 124. In this embodiment, the first connecting rod 612 and the second connecting rod 622 are installed in parallel, and their extension direction is substantially parallel to the direction of the first magnetic field B1. In other words, the first connecting rod 612 and the second connecting rod 622 are configured to move the left arm 123 and the right arm 124 apart or closer to each other. The screw 63 extends parallel to the direction of the first connecting rod 612 and the direction of the second connecting rod 622, and passes through the screw hole 6111 of the first pulley 611 and the screw hole 6211 of the second pulley 621 simultaneously. As shown in Figure 17, in this embodiment, the left-hand thread 631 of the screw 63 (where the screw 63 passes through the screw hole 6111 of the first pulley 611) has the first thread direction, and the right-hand thread 632 of the screw 63 (where the screw 63 passes through the screw hole 6211 of the second pulley 621) has the second thread direction, and the thread directions of the left-hand thread 631 and the right-hand thread 632 are opposite. In this way, when the screw 63 is driven by the motor assembly 64 and rotates counterclockwise, the screw hole 6111 of the first pulley 611 is driven, and the first pulley 611 moves to the left side of Figure 17 along the first guide rail 614, and the left arm 123, which is coupled to the first pulley 611 by the first connecting rod 612, moves to the left side of Figure 17. Also, the screw hole 6211 of the second pulley 621 is driven, and the second pulley 621 moves to the right side of Figure 17 along the second guide rail 624, and the right arm 124, which is coupled to the second pulley 621 by the second connecting rod 622, moves to the right side of Figure 17. As a result, the left arm 123 and the right arm 124 move closer to each other, and the magnetic force acting on the ion beam I increases.

[0032] In some embodiments, the drive unit 126 includes a first bellows 613 and a second bellows 623, the first bellows 613 covering the first connecting rod 612 and fixed to the first pulley 611 and the cavity wall 1271 of the vacuum cavity 127, and the second bellows 623 covering the second connecting rod 622 and fixed to the second pulley 621 and the cavity wall 1271 of the vacuum cavity 127. The bellows are used to seal the opening on the sealing cover 128, which is advantageous for the first connecting rod 612 or the second connecting rod 622 to extend from the outside of the vacuum cavity 127 into the inside of the vacuum cavity 127. The bellows are also compressible and can provide mobility to the first connecting rod 612 or the second connecting rod 622.

[0033] Although preferred embodiments of the present invention have been described above, the present invention is not limited to such embodiments, and any modifications to the present invention that do not deviate from the spirit of the invention fall within the technical scope of the present invention.

[0034] Table 1 is a record table of Gaussian values ​​at each magnetic field measurement point in the embodiment shown in Figure 8.

[0035] [Table 1] Table 2 shows the change in the divergence angle of the ion beam along the Y axis with changes in the magnet spacing in different manufacturing processes.

[0036] [Table 2] [Explanation of symbols]

[0037] 10': Ion implanter 11: Ion source 111: Arc-shaped slit 12: Ion beam shape adjustment module 121: Upper magnet pair 1211: First upper magnet 1212:Second upper magnet 122: Lower magnet pair 1221: First lower magnet 1222: Second lower magnet 123: Left arm 124: Right arm 125: Drive unit 51: First slide rail 511: First Slider 5111: Rack 512: First guide rail 52: Second slide rail 521: Second slider 5211: Rack 522: Second guide rail 53: Gear 54: Motor Assembly 541: Variable resistor 542: Worm gear assembly 543: Magnetic fluid bearing 544: Drive motor 126: Drive unit 61:First slide 611:First pulley 6111: Screw hole 612: First series rod 613: First ripple tube 614: First guide rail 62:Second slide 621:Second pulley 6211: Screw hole 622:Second continuous rod 623:Second ripple tube 624: Second guide rail 63: Screw 631: Left-hand thread 632: Right-hand thread 64: Motor Assembly 127: Vacuum Cavity 1271: Cavity wall 128: Ceiling cover 13: Analyzer Magnet Unit 131:Entrance 132:Exit 14: Linear multipole module 91: Circuit board 92: Ion beam profiler 921: 1-Dimensional Ion Beam Profile Faraday Cup 922: 2D Ion Beam Profile Faraday Cup 923: Angle measuring Faraday cup 923a: Central sensor 923b: Left side sensor 923c: Right side sensor 923d: Upper sensor 923e: Lower sensor θc1: Central angle of the ion beam θc2: Total central angle of the ion beam θy: Divergence angle of the ion beam I: Ion beam B1: First magnetic field B2:Second magnetic field L1, C1, R1, L2, C2, R2: Measurement point A: Diameter of the substrate D: Interval d: width of the slit H: Slit height h: height of the cavity D1, D2, D3, D4: Distance N: Magnetic pole R: curvature S: Magnetic pole X, Y, Z: Coordinate axes

Claims

1. An ion implanter for processing substrates, Ion source for generating ion beams; A linear multipole module installed between the ion source and the substrate, for diverging the ion beam; An ion beam shape adjustment module installed between the ion source and the linear multipole module; and Includes an analyzer magnet unit installed between the ion source and the linear multipole module, The ion beam shape adjustment module is installed in front of the entrance of the analyzer magnet unit. The linear multipole module is installed behind the exit of the analyzer magnet unit. An ion implanter, wherein the ion beam shape adjustment module can be used to adjust the ion beam to change the ion beam divergence angle at which the ion beam enters the substrate.

2. An ion implanter according to claim 1, An ion implanter in which the ion beam shape adjustment module is used to generate a first magnetic field and a second magnetic field, the ion beam can pass through the first magnetic field and the second magnetic field simultaneously, and the magnetic field directions of the first magnetic field and the second magnetic field are opposite to each other.

3. An ion implanter according to claim 2, The ion beam shape adjustment module includes an upper magnet pair and a lower magnet pair. The upper magnet pair is used to generate the first magnetic field, and the upper magnet pair includes a first upper magnet and a second upper magnet, with a first gap between the first upper magnet and the second upper magnet, the upper part of the ion beam passing through the first gap, and the direction of propagation of the ion beam being perpendicular to the first magnetic field. An ion implanter in which the lower magnet pair includes a first lower magnet and a second lower magnet, a second magnetic field is formed between the lower magnet pair, there is a second gap between the first lower magnet and the second lower magnet, the lower part of the ion beam passes through the second gap, and the direction of propagation of the ion beam is perpendicular to the second magnetic field.

4. An ion implanter according to claim 3, An ion implanter in which an upward magnetic component of the ion beam is generated by the first magnetic field and a downward magnetic component of the ion beam is generated by the second magnetic field.

5. An ion implanter according to claim 3, An ion implanter in which the first upper magnet, the second upper magnet, the first lower magnet, and the second lower magnet are permanent magnets.

6. An ion implanter according to claim 3, An ion implanter in which the distance between the first gap and the second gap is the interval, and the interval is directly proportional to the divergence angle of the ion beam.

7. An ion implanter according to claim 3, The ion beam shape adjustment module further includes a left arm and a right arm and a drive unit. The left arm is positioned to the left of the direction of travel of the ion beam, the first upper magnet is fixed to the upper end of the left arm, and the second lower magnet is fixed to the lower end of the left arm. The right arm is positioned to the right of the direction of travel of the ion beam, the second upper magnet is fixed to the upper end of the right arm, and the first lower magnet is fixed to the lower end of the right arm. An ion implanter, wherein the drive unit is coupled to the left arm and the right arm and is used to adjust the distance between the left arm and the right arm.

8. An ion implanter according to claim 7, The ion beam shape adjustment module further includes a vacuum cavity, and the left arm and the right arm are set inside the vacuum cavity. The aforementioned drive unit includes a first slide rail, a second slide rail, a gear, and a motor assembly. The first slide rail includes a first slider and a first guide rail, the first guide rail extends parallel to the first magnetic field direction, the first slider is coupled to the left arm and has a rack, The second slide rail includes a second slider and a second guide rail, the second guide rail extends parallel to the first magnetic field direction and is installed on the opposite side of the first guide rail, the second slider is coupled to the right arm and has another rack, The gear engages simultaneously with the rack of the first slider and the other rack of the second slider. An ion implanter in which the motor assembly is fixed to the outside of the vacuum cavity, and the rotating shaft of the motor assembly penetrates the cavity wall of the vacuum cavity and is fixed to the gear.

9. An ion implanter according to claim 7, The ion beam shape adjustment module further includes a vacuum cavity, and the left arm and the right arm are installed inside the vacuum cavity. The drive unit includes a first slide, a second slide, a screw, and a motor assembly. The first slide includes a first pulley and a first connecting rod, is installed outside the vacuum cavity, the first connecting rod extends parallel to the first magnetic field direction and penetrates the cavity wall of the vacuum cavity and is fixed to the left arm, the first pulley is coupled to the first connecting rod and has a screw hole, The second slide includes a second pulley and a second connecting rod, is installed outside the vacuum cavity, the second connecting rod extends parallel to the first magnetic field direction and penetrates the cavity wall of the vacuum cavity and is fixed to the right arm, the second pulley is coupled to the second connecting rod and has another screw hole, The screw extends parallel to the direction of the first connecting rod and the direction of the second connecting rod, and simultaneously passes through the screw hole of the first pulley and the other screw hole of the second pulley. The motor assembly has a rotating shaft and is fixed to the side of the screw, an ion implanter.

10. An ion implanter according to claim 9, An ion implanter in which the screw has a first thread direction where it passes through the screw hole of the first pulley, and a second thread direction where it passes through the other screw hole of the second pulley, and the first thread direction and the second thread direction are opposite to each other.

11. An ion implanter according to claim 9, The drive further includes a first wave tube and a second wave tube, The first wave tube covers the first connecting rod and is fixed to the first pulley and the cavity wall of the vacuum cavity. An ion implanter in which the second wave tube covers the second connecting rod and is fixed to the second pulley and the cavity wall of the vacuum cavity.

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