Impedance matched dual drive push-pull electro-optic modulator
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TIANJIN GUANGXI INFORMATION TECHNOLOGY CO LTD
- Filing Date
- 2026-04-15
- Publication Date
- 2026-07-21
AI Technical Summary
Traditional silicon-based electro-optic modulators are prone to phase errors and amplitude imbalances at high frequencies, resulting in signal distortion. Furthermore, impedance mismatch leads to signal reflection and deterioration of high-frequency transmission performance, making it difficult to meet the low-cost, high-density, and large-scale manufacturing requirements of data centers.
An impedance-matched dual-drive push-pull electro-optic modulator is adopted. Through the coplanar waveguide traveling wave electrode of the GGSSG structure and the multilayer interconnect structure, the coordinated management of DC bias and RF modulation is realized, reducing signal cross-coupling and optimizing device integration and electro-optic bandwidth.
The modulation's termination impedance was improved, signal reflection and RF loss were reduced, high-frequency signal transmission performance was improved, half-wave voltage and device power consumption were reduced, and high integration and CMOS process compatibility were achieved.
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