Stacked memory component with fault detection and repair functionality
By employing voltage-mode testing and redundant DTC replacement schemes, the problem of DTC faults in semiconductor memories was solved, thereby improving the reliability and performance of the memory system and ensuring the stable operation of memory components.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SANDISK TECHNOLOGIES LLC
- Filing Date
- 2025-04-16
- Publication Date
- 2026-06-05
AI Technical Summary
In semiconductor memories, electrical conductor faults such as discontinuities or short circuits can lead to undesirable consequences. Existing technologies struggle to effectively detect and replace defective deep trench contacts (DTCs), impacting the reliability and performance of memory systems.
By applying voltage-mode testing to identify defective DTCs, redundant DTCs are provided for replacement. Multiplexer/demultiplexer circuits are used to remap signals to bypass defective sections, and appropriate logic circuits are combined to control signal routing to overcome defects, thus realizing the detection and replacement of DTCs.
Effective detection and replacement of defective DTCs improves the reliability and performance of memory systems, ensuring the stability and data integrity of memory components during operation.
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