Stacked memory component with fault detection and repair functionality

By employing voltage-mode testing and redundant DTC replacement schemes, the problem of DTC faults in semiconductor memories was solved, thereby improving the reliability and performance of the memory system and ensuring the stable operation of memory components.

CN122157747APending Publication Date: 2026-06-05SANDISK TECHNOLOGIES LLC

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SANDISK TECHNOLOGIES LLC
Filing Date
2025-04-16
Publication Date
2026-06-05

AI Technical Summary

Technical Problem

In semiconductor memories, electrical conductor faults such as discontinuities or short circuits can lead to undesirable consequences. Existing technologies struggle to effectively detect and replace defective deep trench contacts (DTCs), impacting the reliability and performance of memory systems.

Method used

By applying voltage-mode testing to identify defective DTCs, redundant DTCs are provided for replacement. Multiplexer/demultiplexer circuits are used to remap signals to bypass defective sections, and appropriate logic circuits are combined to control signal routing to overcome defects, thus realizing the detection and replacement of DTCs.

Benefits of technology

Effective detection and replacement of defective DTCs improves the reliability and performance of memory systems, ensuring the stability and data integrity of memory components during operation.

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Abstract

An apparatus includes control circuitry configured to connect to a stacked integrated memory assembly through a deep trench contact (DTC) that extends through the stacked integrated memory assembly. Each integrated memory assembly is formed from a memory die bonded to a control die. The control circuitry is configured to apply a test pattern to the DTC to detect defects in the DTC.
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