Cored metamaterials for electromagnetic wave manipulation
By setting a parallel circuit of core particles and capacitors in the gaps between metasurface units and configuring different resistors, inductors, capacitors and diodes, the functional control of metamaterials in different electromagnetic domains is realized, which solves the problems of high computational burden and lack of versatility in traditional design, and improves design efficiency and performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NAT UNIV OF DEFENSE TECH
- Filing Date
- 2026-05-11
- Publication Date
- 2026-06-05
AI Technical Summary
Traditional metasurface design relies on principle-driven methods, which result in high computational burden, lack of versatility, and specific structural functions, making it difficult to promote to different functional objectives.
By employing cored metamaterials oriented towards electromagnetic wave modulation, and by setting up a circuit structure in which core particles and capacitors are connected in parallel in the gaps between metasurface units, and configuring resistors, inductors, capacitors and diodes of different core particles, electromagnetic functional modulation in the frequency domain, amplitude domain, polarization domain and phase domain can be achieved.
It improves design efficiency, simplifies topology, increases the bandwidth of frequency-selective surfaces, energy-selective surfaces, and absorbers, while reducing the size of metamaterials.
Smart Images
Figure CN122158959A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of metasurface technology, and in particular to cored metamaterials for electromagnetic wave manipulation. Background Technology
[0002] Since their inception, metamaterials have attracted researchers' attention due to their extraordinary physical properties not found in natural materials, and have been widely applied in electromagnetism, acoustics, seismology, mechanics, and many other fields. The physical properties of metamaterials mainly depend on their structural units; by rationally selecting materials and designing structural units, properties with enormous application potential, such as negative refraction and electromagnetic stealth, can be achieved.
[0003] Since its introduction, the concept of metamaterials has been based on three-dimensional structures, which present challenges such as difficulties in fabrication, high ohmic losses in the optical band, strong wavelength dependence, and strong dispersion behavior associated with resonance. The emergence of metamaterials with two-dimensional planar structures, namely metasurfaces, has made fabrication easier. Reducing the thickness of metamaterials can significantly reduce losses, prompting further exploration and research into the electromagnetic response characteristics of single-layer or multi-layer stacked planar metasurfaces. Since its inception, electromagnetic metasurfaces have been widely applied in frequency-selective surfaces, energy-selective surfaces, absorbers, polarization-selective surfaces, and other applications.
[0004] Researchers have proposed many design methods and complex electromagnetic structures, and have made outstanding achievements in various functions of electromagnetic metasurfaces.
[0005] In existing technologies, traditional metasurface design relies on a principle-driven approach to achieve the desired frequency or phase response. This primarily depends on equivalent circuit modeling to guide cell development, followed by the derivation of an approximate cell structure from the circuit. Subsequently, iterative optimization of the structural parameters is required to ensure the response matches theoretical expectations, and full-wave simulation experiments are then conducted to verify the theoretical goals.
[0006] However, this traditional design is usually not applicable to different functional objectives, and structural optimization, due to its iterative nature, dominates the computational burden, and the structure is functionally specific and lacks versatility. Summary of the Invention
[0007] Based on this, it is necessary to provide cored metamaterials for electromagnetic wave manipulation to address the above-mentioned technical problems. These metamaterials can decouple the physical structure of the metasurface from the core circuit of the electromagnetic response and achieve different electromagnetic functions in the frequency domain, amplitude domain, polarization domain, and phase domain by configuring different cores.
[0008] Core-sized metamaterials for electromagnetic wave manipulation include: multiple arrays of metasurface units; Each gap in the radiation layer of the metasurface unit is provided with a core particle to form a circuit structure in which the core particle and the capacitor are connected in parallel. The chip includes: one or more chip branches connected in parallel and a diode branch; the chip branch includes a resistor, an inductor and / or a capacitor; the diode branch includes a diode; By configuring resistors, inductors, capacitors, and diodes in the core particles, the different functions of the metamaterial in the frequency domain, amplitude domain, polarization domain, and phase domain can be corresponded, thus realizing the electromagnetic wave modulation of the core-particle metamaterial.
[0009] In one embodiment, the core includes: two core branches connected in parallel, one core branch including a first resistor, a first inductor and a first capacitor connected in series, and the other core branch including a second resistor, a second inductor and a second capacitor connected in series; Configure the first inductor and the second capacitor, and select the metasurface for the bandpass frequency corresponding to the frequency domain; Configure the first capacitor and the first inductor, and select the metasurface for the band-stop frequency in the corresponding frequency domain; Configure a first capacitor, a first inductor, a second capacitor, and a second inductor, and select a metasurface for the dual-band stop frequency in the corresponding frequency domain.
[0010] In one embodiment, different values for the first capacitor, the first inductor, the second capacitor, the second inductor, and the thickness of the dielectric layer correspond to different frequency bands.
[0011] In one embodiment, the chip includes: two chip branches connected in parallel and a diode branch, one chip branch including a first resistor, a first inductor and a first capacitor connected in series, and the other chip branch including a second resistor, a second inductor and a second capacitor connected in series. Configure a second capacitor, a first inductor, and a diode, and select a metasurface for the bandpass energy in the corresponding amplitude domain; Configure a first capacitor, a first inductor, and a diode, and select a metasurface for the band-resistance energy in the corresponding amplitude domain; Configure a first capacitor, a first inductor, a second capacitor, a second inductor, and a diode, and select a metasurface for dual-band impedance in the corresponding amplitude domain.
[0012] In one embodiment, when two radiating layers are provided, one radiating layer is configured with a first resistor, a first capacitor, and a first inductor while the other radiating layer is configured with a second resistor, or one radiating layer is configured with a first resistor while the other radiating layer is configured with a second resistor, corresponding to the absorber in the amplitude domain.
[0013] In one embodiment, different values of the first resistor, first capacitor, first inductor, second resistor, second capacitor, second inductor, diode, and dielectric layer thickness correspond to different bands in the amplitude domain.
[0014] In one embodiment, the core includes: two core branches connected in parallel, one core branch including a first resistor, a first inductor and a first capacitor connected in series, and the other core branch including a second resistor, a second inductor and a second capacitor connected in series; Two cores in one direction are configured as the first inductor and two cores in the other direction are configured as the first capacitor, corresponding to a circular polarization converter in the polarization domain.
[0015] In one embodiment, different values for the first inductor, the first capacitor, and the thickness of the dielectric layer correspond to different bands of the polarization domain.
[0016] In one embodiment, the core includes: two core branches connected in parallel, one core branch including a first resistor, a first inductor and a first capacitor connected in series, and the other core branch including a second resistor, a second inductor and a second capacitor connected in series; One radiating layer is configured with a first capacitor while another radiating layer is configured with a third resistor, corresponding to a reflective phase modulator in the phase domain; A transmissive phase modulator in the phase domain is configured with a first capacitor, a first inductor, and a second capacitor in one radiating layer and a third capacitor, a third inductor, and a fourth capacitor in another radiating layer, or a first inductor and a second capacitor in one radiating layer and a third inductor and a fourth capacitor in another radiating layer.
[0017] In one embodiment, different values of the first capacitor, first inductor, second capacitor, third capacitor, third inductor, third resistor, fourth capacitor, and dielectric layer thickness correspond to different bands in the phase domain.
[0018] The aforementioned core-embedded metamaterials (MCES) for electromagnetic wave manipulation employ a "simple structure + complex circuit" strategy. The basic metasurface unit maintains a fixed geometry (e.g., a cross structure), while various lumped elements (including resistors (R), inductors (L), capacitors (C), and diodes) are integrated into their gaps. This decouples the physical structure of the metasurface from the core circuitry of the electromagnetic response. The electromagnetic response (performance configuration) can be rapidly remodulated simply by adjusting the circuit (replacing the integrated chip containing the circuitry). In other words, for the same metasurface unit structure, by configuring different cores (embedding different circuit configurations), performance can be achieved in the frequency domain, amplitude domain, and polar domain. The application achieves different electromagnetic functions in the phase and phase domains. Simultaneously, it integrates multiple different circuits to realize metasurface units with different functions, without being limited by the specific configuration of the basic structural units. This allows for comparable performance indicators while maintaining a simplified topology, significantly improving design efficiency without compromising electromagnetic properties. It bypasses the traditional full-wave simulation optimization loop, providing a new dimension for metamaterial design. Furthermore, the configuration of this application can improve performance (including increasing the bandwidth of the frequency-selective surface, the bandwidth of the energy-selective surface, and the bandwidth of the absorber) and reduce size. Attached Figure Description
[0019] Figure 1 A comparison diagram of the design concepts of existing technology (traditional metasurface design) and this application (MCES design); Figure 2 This is a schematic diagram of a cored metamaterial for electromagnetic wave manipulation in one embodiment; Figure 3 This is a schematic diagram of the structure of a bandpass frequency selective metasurface in one embodiment; Figure 4 This is a schematic diagram of the bandstop frequency-selective metasurface structure in one embodiment; Figure 5 This is a schematic diagram of the structure of a dual-band stop frequency selective metasurface in one embodiment; Figure 6 This is a simulation diagram of a bandpass frequency selective metasurface in one embodiment; Figure 7 This is a simulation diagram of a bandstop frequency-selective metasurface in one embodiment; Figure 8 This is a simulation diagram of a dual-band stop-frequency selective metasurface in one embodiment; Figure 9 This is a schematic diagram of the structure of a bandpass energy selective metasurface in one embodiment; Figure 10 This is a schematic diagram of the structure of a resistance energy-selective metasurface in one embodiment; Figure 11 This is a schematic diagram of the structure of a dual-band impedance energy-selective metasurface in one embodiment; Figure 12 This is a schematic diagram of one embodiment of the absorber; Figure 13 This is a schematic diagram of another structure of the absorber in one embodiment; Figure 14 This is a simulation diagram of a bandpass energy-selective metasurface in one embodiment; Figure 15 This is a simulation diagram of a resistive energy-selective metasurface in one embodiment; Figure 16 This is a simulation diagram of a dual-band impedance energy-selective metasurface in one embodiment; Figure 17 This is a simulation diagram of the absorber in one embodiment; Figure 18 This is a schematic diagram of the structure of a circular polarization converter in one embodiment; Figure 19 This is a simulation diagram of a circular polarization converter in one embodiment; Figure 20 This is a schematic diagram of the structure of a reflective phase modulator in one embodiment; Figure 21 This is a schematic diagram of the structure of a transmissive phase modulator in one embodiment; Figure 22 This is a simulation diagram of a phase modulator (reflective) in one embodiment; Figure 23 This is a simulation diagram of a phase modulator (transmission type) in one embodiment; Figure 24 This is a schematic diagram of the structure of the bandpass frequency selection surface of this application in a specific embodiment; Figure 25 This is a simulation diagram of the bandpass frequency selection surface of this application in a specific embodiment; Figure 26 This is a schematic diagram of the structure of a prior art frequency selection surface in a specific embodiment; Figure 27 A simulation diagram of a prior art frequency selection surface in a specific embodiment; Figure 28 This is a schematic diagram of the structure of the bandpass energy selection surface of this application in a specific embodiment; Figure 29 This is a simulation diagram of the bandpass energy selection surface of this application in a specific embodiment; Figure 30 This is a schematic diagram of the structure of a prior art energy selective surface in a specific embodiment; Figure 31 This is a simulation diagram of a prior art energy selective surface in a specific embodiment; Figure 32 This is a schematic diagram of the structure of the absorber of this application in a specific embodiment; Figure 33 This is a simulation diagram of the absorber of this application in a specific embodiment; Figure 34 This is a schematic diagram of the structure of a prior art absorber in a specific embodiment; Figure 35 This is a simulation diagram of a prior art absorber in a specific embodiment. Detailed Implementation
[0020] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.
[0021] It should be noted that all directional indicators (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.
[0022] Furthermore, the use of terms such as "first" and "second" in this application is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of those features. In the description of this application, "multiple sets" means at least two sets, such as two sets, three sets, etc., unless otherwise explicitly specified.
[0023] In this application, unless otherwise expressly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection, an electrical connection, a physical connection, or a wireless communication connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two elements or the interaction between two elements, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.
[0024] Furthermore, the technical solutions of the various embodiments of this application can be combined with each other, but only if they are based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this application.
[0025] This application provides cored metamaterials for electromagnetic wave manipulation, such as... Figures 1 to 2 As shown, in one embodiment, it includes: a plurality of metasurface units arranged in an array.
[0026] Each gap in the radiation layer of the metasurface unit is provided with a core particle to form a circuit structure in which the core particle and the capacitor are connected in parallel.
[0027] The chip includes: one or more chip branches and / or one diode branch, all chip branches are connected in parallel with the diode branch; the chip branch includes resistors, inductors and / or capacitors, and in the same chip branch, the resistors, inductors and / or capacitors are connected in series; the diode branch includes one diode.
[0028] By configuring resistors, inductors, capacitors, and diodes in the core particles, the different functions of the metamaterial in the frequency domain, amplitude domain, polarization domain, and phase domain can be corresponded, thus realizing the electromagnetic wave modulation of the core-particle metamaterial.
[0029] In one embodiment, the metamaterial includes multiple metasurface units, each metasurface unit including one or two radiating layers; the radiating layer includes four strip patches, with one corresponding end of the four strip patches connected and the other corresponding end facing four different positive directions to form a cross-shaped metasurface structure; each strip patch has a gap, and each gap contains a core particle; the core particle includes two core particle branches connected in parallel and a diode branch; in one radiating layer, one core particle branch includes a first resistor R11, a first inductor L11, and a first capacitor C11 connected in series, the other core particle branch includes a second resistor R12, a second inductor L12, and a second capacitor C12 connected in series, and the diode branch includes a diode; in another radiating layer, one core particle branch includes a third resistor R21, a third inductor L21, and a third capacitor C21 connected in series, the other core particle branch includes a fourth resistor R22, a fourth inductor L22, and a fourth capacitor C22 connected in series, and the diode branch includes a diode.
[0030] According to the equivalent circuit method, any metasurface structure can be equivalent to a circuit structure. The performance of different metasurface structures varies due to the differences in their equivalent circuits. In the cross-shaped metasurface structure, the strip structure is equivalent to an inductor, the gap is equivalent to a capacitor, and different core particles are filled in the gap. The entire radiating layer structure is equivalent to the core particles being connected in parallel with the capacitor and then connected in series with the inductor. The dielectric layer is equivalent to a transmission line.
[0031] 1. Frequency domain Frequency-domain metasurfaces include frequency-selective metasurfaces (FSS), which represent the most widely used class of metasurfaces in frequency-dimensional modulation. They allow electromagnetic waves to pass through a specified frequency band with low insertion loss (IL) while attenuating waves outside that band.
[0032] 1) When there is only one radiative layer, and the core particles in each gap are identical: Configure the first inductor and the second capacitor, and select the metasurface for the corresponding bandpass frequency in the frequency domain, such as... Figure 3 As shown; Configure the first capacitor and the first inductor, and select a metasurface corresponding to the band-stop frequency in the corresponding frequency domain, such as... Figure 4 As shown; Configure a first capacitor, a first inductor, a second capacitor, and a second inductor, and select a metasurface with a dual-band stop-frequency in the corresponding frequency domain, such as... Figure 5 As shown.
[0033] 2) In the frequency domain, different values of the first capacitor, first inductor, second capacitor, second inductor, and dielectric layer thickness correspond to different frequency bands. Bandpass frequency-selective metasurfaces, bandstop frequency-selective metasurfaces, and dual-band bandstop frequency-selective metasurfaces can all cover the L to Ku bands, as shown in Table 1. Figures 6 to 8 As shown (where, Figures 6 to 8 (Taking only one frequency band from L to Ku as an example).
[0034] Table 1: Parameter Design of Frequency-Selective Metasurfaces
[0035] 2. Amplitude domain Metasurfaces in the amplitude domain include energy-selective metasurfaces (ESS) and absorbers.
[0036] 1) When there is only one radiative layer, and the core particles in each gap are identical: Configure a second capacitor, a first inductor, and a diode, and select a metasurface corresponding to the bandpass energy in the amplitude domain, such as... Figure 9 As shown; Configure a first capacitor, a first inductor, and a diode, and select a metasurface corresponding to the band-resistance energy in the amplitude domain, such as... Figure 10 As shown; Configure a first capacitor, a first inductor, a second capacitor, a second inductor, and a diode, and select a metasurface for the dual-band impedance in the corresponding amplitude domain, such as... Figure 11 As shown.
[0037] 2) When there are two radiation layers, and the core particles in each gap of the same radiation layer are the same: One radiating layer is configured with a first resistor, a first capacitor, and a first inductor, while another radiating layer is configured with a second resistor, or one radiating layer is configured with a first resistor while another radiating layer is configured with a second resistor, corresponding to an absorber in the amplitude domain, such as... Figure 12 and Figure 13 As shown.
[0038] 3) In the amplitude domain, different values of the first resistor, first capacitor, first inductor, second resistor, second capacitor, second inductor, diode, and dielectric layer thickness correspond to different bands in the amplitude domain. Bandpass energy selective metasurfaces, bandstop energy selective metasurfaces, dual-band bandstop energy selective metasurfaces, and absorbers can all cover the L to Ku bands, as shown in Table 2. Figures 14 to 17 As shown (where, Figures 14 to 17 (Taking only one frequency band from L to Ku as an example).
[0039] Table 2: Parameter Design of Energy Selective Metasurface and Absorber
[0040] 3. Polarization domain The metasurface of the polarization domain includes a circular polarization converter, which converts the incident linearly polarized wave into a circularly polarized wave output. When the linearly polarized incident wave irradiates the wave, the two orthogonal polarization components (horizontal and vertical polarization components) of the transmitted wave have equal amplitudes and a phase difference of ±90°. The sign of the phase difference determines the rotational direction (left-handed or right-handed) of the resulting circular polarization.
[0041] 1) When there is only one radiative layer, and the core particles in each gap are different (specifically: the configuration of adjacent core particles is different, but the configuration of relative core particles is the same): Two cores in one direction are configured as the first inductor, and two cores in the other direction are configured as the first capacitor, corresponding to a circular polarization converter in the polarization domain, such as... Figure 18 As shown.
[0042] 2) In the polarization domain, different values of the first inductor, the first capacitor, and the dielectric layer thickness correspond to different wavebands in the polarization domain. The circular polarization converter can cover the L to Ku wavebands, as shown in Table 3. Figure 19 As shown (where, Figure 19 (Taking only one frequency band from L to Ku as an example).
[0043] Table 3: Parameter Design of Circular Polarization Converters
[0044] 4. Phase Domain The phase domain metasurface includes a phase modulator, which includes a reflective phase modulator and a transmissive phase modulator. The phase modulator can achieve controllable changes in the phase of the reflected or transmitted wave, and the phase of the reflected or transmitted wave can be precisely controlled in 10° steps within the range of 0° to -180°.
[0045] 1) When there are two radiating layers, and the core particles in each gap of the same radiating layer are the same: One radiating layer is configured with a first capacitor while another radiating layer is configured with a third resistor, corresponding to a reflective phase modulator in the phase domain, such as... Figure 20 As shown; One radiating layer is configured with a first capacitor, a first inductor, and a second capacitor, while another radiating layer is configured with a third capacitor, a third inductor, and a fourth capacitor; or one radiating layer is configured with a first inductor and a second capacitor, while another radiating layer is configured with a third inductor and a fourth capacitor. This corresponds to a transmissive phase modulator in the phase domain, such as... Figure 21 As shown in the figure (only one case is shown in the attached figure).
[0046] 2) In the phase domain, different values of the first capacitor, first inductor, second capacitor, third capacitor, third inductor, third resistor, fourth capacitor, and dielectric layer thickness correspond to different wavebands in the phase domain. Both reflective and transmissive phase modulators can cover the L to Ku wavebands, as shown in Tables 4 and 5. Figure 22 , Figure 23 As shown (where, Figure 22 , Figure 23 (Taking only one frequency band from L to Ku as an example).
[0047] Table 4: Parameter Design of Reflective Phase Modulators
[0048] Table 5: Parameter Design of Transmission Phase Modulator
[0049] In this embodiment, the designed metasurface consists of passive structures (dielectric and metallic elements) and integrated circuit elements (including diodes, resistors, inductors, and capacitors). The passive structure remains stationary and interacts directly with free-space electromagnetic waves, converting them into guided waves; in contrast, the integrated circuits do not interact directly with space waves but modulate the current within the circuit. By integrating different chip circuit configurations, electromagnetic fields in free space can be effectively manipulated.
[0050] It should be noted that this application uses micro-nano technology (which is existing technology) to integrate complex circuits into a tiny area to form a core, and then integrate the core onto a metasurface unit. Thus, different electromagnetic responses can be obtained through different configurations of the core, while maintaining the uniformity of the metasurface geometry. Diverse metasurface functions can be achieved without structural modifications, expanding the complexity of integrated circuits and avoiding parasitic parameter problems that occur in high-frequency applications.
[0051] It should also be noted that the cross-shaped metasurface structure is used as an example in this application, but in the actual implementation, a metasurface structure of any geometry can be used.
[0052] The aforementioned metacircuit-embedded surface (MCES) for electromagnetic wave manipulation employs a "simple structure + complex circuit" strategy. The basic metasurface unit maintains a fixed geometry (e.g., a cross structure), while various lumped elements (including resistors (R), inductors (L), capacitors (C), and diodes) are integrated into their gaps. This decouples the physical structure of the metasurface from the core circuitry of the electromagnetic response. The electromagnetic response can be rapidly remodulated (performance configured) simply by adjusting the circuitry (replacing the integrated chip containing the circuitry). In other words, for the same metasurface unit structure, by configuring different cores (embedding different circuit configurations), performance can be achieved in the frequency domain, amplitude domain, and polar domain. The application achieves different electromagnetic functions in the phase and phase domains. Simultaneously, it integrates multiple different circuits to realize metasurface units with different functions, without being limited by the specific configuration of the basic structural units. This allows for comparable performance indicators while maintaining a simplified topology, significantly improving design efficiency without compromising electromagnetic properties. It bypasses the traditional full-wave simulation optimization loop, providing a new dimension for metamaterial design. Furthermore, the configuration of this application can improve performance (including increasing the bandwidth of the frequency-selective surface, the bandwidth of the energy-selective surface, and the bandwidth of the absorber) and reduce size.
[0053] In one specific embodiment, a frequency selection surface is designed and compared with existing technologies.
[0054] like Figure 24 As shown, the bandpass frequency selection surface of this application is implemented by integrating a parallel circuit consisting of an inductor (6 nH) and a capacitor (0.5 pF) on the top layer of the basic electromagnetic structure.
[0055] like Figure 25 As shown, the frequency selection surface of this application has a -3 dB bandwidth of 2.8 GHz (1.5-4.3 GHz) and a cell size of 0.027λ0. 0.027λ0, where λ0 represents the resonant wavelength in free space.
[0056] like Figure 26 As shown, frequency-selective surfaces in the prior art are achieved through complex metal patterns, through-holes, or multi-layer architectures.
[0057] like Figure 27 As shown, the prior art frequency selective surface has a -3 dB bandwidth of 0.88 GHz (1.96-2.84 GHz) and a cell size of 0.035λ0. 0.035λ0, where λ0 represents the resonant wavelength in free space.
[0058] The above comparison reveals that the bandpass frequency selective surface design of this application achieves significantly improved performance while maintaining almost the same resonant frequency: the -3 dB bandwidth is extended from 0.88 GHz to 2.8 GHz, and the unit size is reduced from 0.035λ0. 0.035λ0 decreases to 0.027λ0 The value of 0.027λ0 highlights the superior performance of this application.
[0059] In one specific embodiment, an energy-selective surface is designed and compared with existing technologies.
[0060] like Figure 28 As shown, the bandpass energy selective surface of this application is achieved by integrating a series inductor (10 nH) and capacitor (7 pF) on the top layer of the basic electromagnetic structure and connecting them in parallel with a diode.
[0061] like Figure 29 As shown, the energy selective surface of this application has a -1 dB bandwidth of 3.5 GHz (1.8-5.3 GHz) under low power conditions and a guard bandwidth of 7.8 GHz (0.9-8.7 GHz) under high power conditions, with a cell size of 0.033λ0×0.033λ0, where λ0 represents the resonant wavelength in free space.
[0062] like Figure 30 As shown, energy selective surfaces in the prior art are achieved through complex metal patterns, through-holes, or multi-layer architectures.
[0063] like Figure 31 As shown, the prior art energy selective surface has a -1 dB bandwidth of 1.17 GHz (2.44-3.61 GHz) under low power conditions and a guard bandwidth of 1.72 GHz (2.32-4.04 GHz) under high power conditions, with a unit size of 0.26λ0×0.26λ0, where λ0 represents the resonant wavelength in free space.
[0064] The above comparison shows that the power selectivity of this application significantly improves performance: the -1 dB bandwidth under low power conditions is extended from 1.17 GHz to 3.5 GHz, the protection bandwidth under high power conditions is extended from 1.72 GHz to 7.8 GHz, and the cell size is reduced from 0.26λ0×0.26λ0 to 0.033λ0×0.033λ0.
[0065] In one specific embodiment, an absorber is designed and compared with existing technologies.
[0066] like Figure 32 As shown, the absorber of this application is implemented by integrating an inductor (1.2 nH), a capacitor (0.2 pF) and a resistor (115Ω) in series on the top of the basic electromagnetic structure, and setting a resistor (1Ω) at the bottom.
[0067] like Figure 33 As shown, the absorber of this application has an absorption rate of over 80% in the 4.7-15 GHz range and over 90% in the 5.2-13.3 GHz range, with a unit size of 0.092λ. 0.092λ.
[0068] like Figure 34 As shown, existing absorbers are implemented through complex metal patterns, through holes, or multi-layer structures.
[0069] like Figure 35 As shown, the existing absorber achieves an absorption rate of over 80% in the 4.72-8.49 GHz range with a unit size of 0.22λ. 0.22λ.
[0070] The above comparison shows that the absorber of this application significantly improves performance: the absorbing bandwidth is extended from 3.77 GHz to 8.1 GHz, while the unit size is reduced from 0.22λ. The value of λ decreases from 0.22λ to 0.092λ. 0.092λ.
[0071] The contents not described in detail in this specification are existing technologies known to those skilled in the art.
[0072] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0073] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended application documents.
Claims
1. A core-sized metamaterial for electromagnetic wave manipulation, characterized in that, include: Multiple arrays of metasurface units; Each gap in the radiation layer of the metasurface unit is provided with a core particle to form a circuit structure in which the core particle and the capacitor are connected in parallel. The chip includes: one or more chip branches connected in parallel and a diode branch; the chip branch includes a resistor, an inductor and / or a capacitor; the diode branch includes a diode; By configuring resistors, inductors, capacitors, and diodes in the core particles, the different functions of the metamaterial in the frequency domain, amplitude domain, polarization domain, and phase domain can be corresponded, thus realizing the electromagnetic wave modulation of the core-particle metamaterial.
2. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 1, characterized in that, The core chip includes two core chip branches connected in parallel. One core chip branch includes a first resistor, a first inductor, and a first capacitor connected in series, and the other core chip branch includes a second resistor, a second inductor, and a second capacitor connected in series. Configure the first inductor and the second capacitor, and select the metasurface for the bandpass frequency corresponding to the frequency domain; Configure the first capacitor and the first inductor, and select the metasurface for the band-stop frequency in the corresponding frequency domain; Configure a first capacitor, a first inductor, a second capacitor, and a second inductor, and select a metasurface for the dual-band stop frequency in the corresponding frequency domain.
3. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 2, characterized in that, Different values for the first capacitor, the first inductor, the second capacitor, the second inductor, and the thickness of the dielectric layer correspond to different frequency bands.
4. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 1, characterized in that, The chip includes: two chip branches connected in parallel and a diode branch. One chip branch includes a first resistor, a first inductor and a first capacitor connected in series, and the other chip branch includes a second resistor, a second inductor and a second capacitor connected in series. Configure a second capacitor, a first inductor, and a diode, and select a metasurface for the bandpass energy in the corresponding amplitude domain; Configure a first capacitor, a first inductor, and a diode, and select a metasurface for the band-resistance energy in the corresponding amplitude domain; Configure a first capacitor, a first inductor, a second capacitor, a second inductor, and a diode, and select a metasurface for dual-band impedance in the corresponding amplitude domain.
5. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 4, characterized in that, When there are two radiating layers, one radiating layer is configured with a first resistor, a first capacitor and a first inductor while the other radiating layer is configured with a second resistor, or one radiating layer is configured with a first resistor while the other radiating layer is configured with a second resistor, corresponding to the absorber in the amplitude domain.
6. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 5, characterized in that, Different values of the first resistor, first capacitor, first inductor, second resistor, second capacitor, second inductor, diode, and dielectric layer thickness correspond to different bands in the amplitude domain.
7. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 1, characterized in that, The core chip includes two core chip branches connected in parallel. One core chip branch includes a first resistor, a first inductor, and a first capacitor connected in series, and the other core chip branch includes a second resistor, a second inductor, and a second capacitor connected in series. Two cores in one direction are configured as the first inductor and two cores in the other direction are configured as the first capacitor, corresponding to a circular polarization converter in the polarization domain.
8. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 7, characterized in that, Different values for the first inductor, the first capacitor, and the thickness of the dielectric layer correspond to different bands of the polarization domain.
9. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 1, characterized in that, The core chip includes two core chip branches connected in parallel. One core chip branch includes a first resistor, a first inductor, and a first capacitor connected in series, and the other core chip branch includes a second resistor, a second inductor, and a second capacitor connected in series. One radiating layer is configured with a first capacitor while another radiating layer is configured with a third resistor, corresponding to a reflective phase modulator in the phase domain; A transmissive phase modulator in the phase domain is configured with a first capacitor, a first inductor, and a second capacitor in one radiating layer and a third capacitor, a third inductor, and a fourth capacitor in another radiating layer, or a first inductor and a second capacitor in one radiating layer and a third inductor and a fourth capacitor in another radiating layer.
10. The core-granulated metamaterial for electromagnetic wave manipulation according to claim 9, characterized in that, Different values of the first capacitor, first inductor, second capacitor, third capacitor, third inductor, third resistor, fourth capacitor, and dielectric layer thickness correspond to different wavebands in the phase domain.