A multi-wavelength independently powered macro-channel semiconductor laser array and a method of use

Abstract

The application relates to a multi-wavelength independent power supply macro-channel semiconductor laser stack and a use method, the semiconductor laser stack comprising a first bar stack, a second bar stack, a common positive electrode, an intermediate control electrode, a common negative electrode and a macro-channel cooler; the first bar stack and the second bar stack are fixedly connected to the macro-channel cooler through an insulating heat-conducting substrate at the same time, the common positive electrode is connected to the anode of the first bar stack; the intermediate control electrode is connected between the first bar stack and the second bar stack, and the common negative electrode is connected to the cathode of the second bar stack. The semiconductor laser stack of the application improves the operation flexibility of the semiconductor laser stack through multiple electrodes, can realize precise step adjustment of power, actively prolongs the service life of the device through a time-sharing driving strategy, and generates a complex multi-beam time sequence waveform, and meets the harsh demands of advanced intelligent manufacturing.

Description

Technical Field

[0001] This invention relates to the field of high-power semiconductor laser technology, specifically to a multi-wavelength independently powered macrochannel semiconductor laser array and its usage method. Background Technology

[0002] Semiconductor lasers, due to their advantages such as miniaturization, high efficiency, fast response speed, and relatively low cost, have become an indispensable part of modern laser technology, with wide applications in communications, optical storage, laser printing and cutting, medical, sensor, military, and scientific research fields. High-power semiconductor laser arrays are core light sources for industrial materials processing, pumping solid-state / fiber lasers, and scientific research. However, with the continuous development of application demands, traditional semiconductor laser arrays are increasingly revealing their inherent technical limitations in output spectrum control, electrical manipulation flexibility, and efficient thermal management, making it difficult to meet the needs of next-generation advanced applications.

[0003] In terms of spectral and thermal management, existing techniques typically involve vertically stacking multiple laser bars with the same emission wavelength. This homogeneous structure leads to vertical thermal resistance in the heat sink, causing the bar junction temperature to increase sequentially from bottom to top, resulting in significant thermally induced wavelength shift. The result is a broadened wavelength band in the actual output of the nominally single-wavelength array, severely reducing pump efficiency. In applications requiring precise wavelength matching (such as pumping alkali metal vapor lasers with specific absorption lines), this spectral broadening leads to a sharp deterioration in system performance. While sophisticated temperature control systems can partially mitigate this problem, they are costly, complex, and unreliable.

[0004] In terms of electrical control and functional integration, the single-electrode design of traditional arrays severely limits their application potential. Most arrays use a parallel connection of all laser bars to a single pair of positive and negative electrodes. This "all on when one is on, all off when one is off" driving method limits their use to a single power source, preventing them from achieving refined and intelligent functionality. Specifically, they cannot perform precise power step adjustment (such as achieving delay-free discrete power steps by turning off some bars) or active thermal management (such as using time-sharing and cyclic driving of bars at different positions to balance heat distribution, suppress hotspot formation, and extend device lifespan). This lack of electrical control capability makes traditional arrays unable to meet the growing demands for intelligent and flexible manufacturing. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides a multi-wavelength independently powered macrochannel semiconductor laser array and its usage method.

[0006] The technical problems solved by this invention mainly include: how to achieve precise adjustment of the electronically controlled power and programmable switching of the spectrum of semiconductor laser arrays, how to achieve active thermal management and wavelength control through electrode design, and how to reduce the dependence on complex temperature control systems, thereby reducing system cost and complexity.

[0007] The technical solution of the present invention is as follows: This invention provides a multi-wavelength independently powered macrochannel semiconductor laser array, comprising a first bar array, a second bar array, a common positive electrode, an intermediate control electrode, a common negative electrode, and a macrochannel cooler; The first bar array and the second bar array are both fixedly connected to the macrochannel cooler through an insulating thermally conductive substrate. The common positive electrode is connected to the anode of the first bar array. The intermediate control electrode is connected between the first bar array and the second bar array. The common negative electrode is connected to the cathode of the second bar array. The intermediate control electrode of the present invention serves as the cathode of the first bar array and simultaneously as the anode of the second bar array. The circuit control of the intermediate control electrode determines whether the operating current flows into the second bar array at the rear end.

[0008] According to a preferred embodiment of the present invention, the first bar array is an 808nm wavelength bar array, a 976nm wavelength bar array, or a 755nm wavelength bar array.

[0009] According to a preferred embodiment of the present invention, the second bar array is one of a dual-wavelength bar array of 1064nm and 755nm, a dual-wavelength bar array of 976nm and 1470nm, or a dual-wavelength bar array of 808nm and 940nm.

[0010] According to a preferred embodiment of the present invention, a high-power switch is externally connected in parallel between the intermediate control electrode and the common negative electrode at both ends of the second bar array.

[0011] According to a preferred embodiment of the present invention, a main constant current source is externally connected between the common positive terminal and the common negative terminal, wherein the current output terminal of the main constant current source is connected to the common positive terminal and the current input terminal is connected to the common negative terminal.

[0012] This invention also provides a method for using a multi-wavelength independently powered macrochannel semiconductor laser array, including one of the following two cases: In cases where high power output is required, the following steps are included: When the high-power switch is turned off, the current output from the main constant current source flows sequentially through the common positive terminal, the first bar array, the intermediate control electrode, the second bar array, and the common negative terminal, and then is input into the main constant current source. At this time, the first bar array and the second bar array work simultaneously, and the total output power is at its maximum.

[0013] When a base power output is required, the following steps are included: When the high-power switch is closed, the current output from the main constant current source flows sequentially through the common positive terminal, the first bar array, the intermediate control electrode, the high-power switch, and the common negative terminal before being input into the main constant current source. At this time, only the first bar array works normally, outputting the basic power.

[0014] The technical features and beneficial effects of this invention are as follows: 1. Multi-wavelength bar integrated packaging: The semiconductor laser array of this invention uses a three-electrode series bypass, requiring only a single switching signal to quickly switch between preset spectral modes such as multi-wavelength recombination and single-wavelength. This fundamentally changes the limitation of fixed spectral output of traditional lasers, realizes programmable functionality, and greatly expands application scenarios.

[0015] 2. Rich electronic control functions: The semiconductor laser array of the present invention improves the control flexibility of the semiconductor laser array through multiple electrodes, enables precise step adjustment of power, actively extends the device life through time-division driving strategy, and generates complex multi-beam timing waveforms, meeting the demanding requirements of advanced intelligent manufacturing.

[0016] 3. Enhanced heat dissipation efficiency and reliability: The macrochannel cooler of the semiconductor laser array of the present invention, with its low flow resistance, high reliability and good cooling uniformity, is perfectly adapted to the array architecture with multiple heat sources and non-uniform heating. It not only provides a solid guarantee for high power density operation, but its lower pumping requirements also improve the reliability and energy efficiency of the entire semiconductor laser array.

[0017] 4. Systematic optimization: The semiconductor laser array of the present invention, through the deep collaborative design of multiple wavelengths, multiple electrodes and macro-channel coolers, constructs a high-performance, highly flexible and highly reliable high-power semiconductor laser, solving a system-level problem that has long restricted the development of the industry. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a multi-wavelength independently powered macrochannel semiconductor laser array according to Embodiment 1 of the present invention; wherein: 1, macrochannel cooler; 2, intermediate control electrode; 3, insulating thermally conductive substrate; 4, common positive electrode; 5, first bar array; 6, second bar array; 7, common negative electrode.

[0019] Figure 2 This is a circuit diagram of a multi-wavelength independently powered macrochannel semiconductor laser array according to Embodiment 1 of the present invention. Detailed Implementation

[0020] The present invention will be further described below with reference to embodiments, but is not limited thereto. The described embodiments are some embodiments of the present invention. Based on these embodiments, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. Unless otherwise specified in the embodiments of the present invention, all techniques existing in the art can be used.

[0022] Example 1 A multi-wavelength independently powered macrochannel semiconductor laser array includes a first bar array 5, a second bar array 6, a common positive electrode 4, an intermediate control electrode 2, a common negative electrode 7, and a macrochannel cooler 1; the first bar array 5 is an 808nm wavelength bar array, and the second bar array 6 is a dual-wavelength bar array of 1064nm and 755nm.

[0023] The 808nm wavelength bar array, the 1064nm and 755nm dual-wavelength bar arrays are all fixed to the insulating thermally conductive substrate 3 by eutectic bonding, and then integrated onto the surface of the macrochannel cooler 1. The common positive electrode 4 is connected to the anode of the first bar array 5. The intermediate control electrode 2 is connected between the 808nm wavelength bar array, the 1064nm and 755nm dual-wavelength bar arrays, serving as the cathode of the 808nm wavelength bar array and simultaneously as the anode of the 1064nm and 755nm dual-wavelength bar arrays, controlling the intermediate... The circuit control of control electrode 2 determines whether the operating current flows into the 1064nm and 755nm dual-wavelength bar array at the rear end; the common negative electrode 7 is connected to the cathode of the 1064nm and 755nm dual-wavelength bar array; a high-power switch is externally connected between the intermediate control electrode 2 and the common negative electrode 7, and the state of the switch determines whether the 1064nm and 755nm dual-wavelength bar array is connected to the circuit or short-circuited; a main constant current source is externally connected between the common positive electrode 4 and the common negative electrode 7, and the main constant current source provides a stable main current I. — The current output terminal of the main constant current source is connected to the common positive terminal 4, and the current input terminal is connected to the common negative terminal 7.

[0024] The above-mentioned method for using multi-wavelength independently powered macrochannel semiconductor laser arrays, when high output power is required, includes the following steps: When the high-power switch is turned off, the current output from the main constant current source flows sequentially through the common positive electrode 4, the 808nm wavelength bar array, the intermediate control electrode 2, the 1064nm and 755nm dual-wavelength bar array, and the common negative electrode 7, before being input into the main constant current source. At this time, the 808nm wavelength bar array and the 1064nm and 755nm dual-wavelength bar array are connected in series, simultaneously outputting lasers of three characteristic wavelengths: 808nm, 1064nm, and 755nm. The total output power is the sum of the powers of the three wavelengths, and the total output power is at its maximum.

[0025] This applies to applications requiring multi-wavelength synchronization, such as specific multispectral pumping, materials processing, or medical therapies that require the synergy of multiple wavelengths.

[0026] Example 2 As described in Example 1, the difference is: A method for using a multi-wavelength independently powered macrochannel semiconductor laser array, when a base output power is required, includes the following steps: When the high-power switch is closed, the current output from the main constant current source flows sequentially through the common positive electrode 4, the 808nm wavelength bar array, the intermediate control electrode 2, the high-power switch, and the common negative electrode 7, before being input into the main constant current source. At this time, most of the current (>98%) travels through the low-resistance path of the high-power switch directly to the common negative electrode 7, bypassing the 1064nm and 755nm dual-wavelength bar arrays. The 1064nm and 755nm dual-wavelength bar arrays are turned off due to the lack of current, and only the 808nm wavelength bar array works normally to output 808nm wavelength laser. The total output power is approximately the wavelength power of the first bar array 5.

[0027] This applies to situations where only near-infrared pumping or heating is required, or to degraded operation when dual-wavelength arrays require heat dissipation or maintenance.

[0028] Other conditions are the same as in Example 1.

Claims

1. A multi-wavelength independently powered macrochannel semiconductor laser array, characterized in that, It includes a first bar array, a second bar array, a common positive electrode, an intermediate control electrode, a common negative electrode, and a macrochannel cooler; The first bar array and the second bar array are both fixedly connected to the macrochannel cooler through an insulating thermally conductive substrate. The common positive electrode is connected to the anode of the first bar array. The intermediate control electrode is connected between the first bar array and the second bar array. The common negative electrode is connected to the cathode of the second bar array.

2. The multi-wavelength independently powered macrochannel semiconductor laser array according to claim 1, characterized in that, The first bar array is an 808nm wavelength bar array, a 976nm wavelength bar array, or a 755nm wavelength bar array.

3. The multi-wavelength independently powered macrochannel semiconductor laser array according to claim 1, characterized in that, The second bar array is one of the following: a 1064nm and 755nm dual-wavelength bar array, a 976nm and 1470nm dual-wavelength bar array, or an 808nm and 940nm dual-wavelength bar array.

4. The multi-wavelength independently powered macrochannel semiconductor laser array according to claim 1, characterized in that, A high-power switch is connected in parallel between the intermediate control electrode and the common negative electrode.

5. The multi-wavelength independently powered macrochannel semiconductor laser array according to claim 4, characterized in that, A main constant current source is connected between the common positive and common negative terminals. The current output terminal of the main constant current source is connected to the common positive terminal, and the current input terminal is connected to the common negative terminal.

6. A method for using a multi-wavelength independently powered macrochannel semiconductor laser array, employing the multi-wavelength independently powered macrochannel semiconductor laser array as described in claim 5, characterized in that... In cases where high power output is required, the following steps are included: When the high-power switch is turned off, the current output from the main constant current source flows sequentially through the common positive terminal, the first bar array, the intermediate control electrode, the second bar array, and the common negative terminal, and then is input into the main constant current source. At this time, the first bar array and the second bar array work simultaneously, and the total output power is at its maximum.

7. A method of using a multi-wavelength independently powered macrochannel semiconductor laser array, employing the multi-wavelength independently powered macrochannel semiconductor laser array as described in claim 5, characterized in that... When a base power output is required, the following steps are included: When the high-power switch is closed, the current output from the main constant current source flows sequentially through the common positive terminal, the first bar array, the intermediate control electrode, the high-power switch, and the common negative terminal before being input into the main constant current source. At this time, only the first bar array works normally, outputting the basic power.

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