A β-Ga2O3 epitaxial structure and its manufacturing method, and semiconductor devices
By introducing a nitrided Ga2O3 buffer layer into the β-Ga2O3 epitaxial structure, the problems of low crystal quality and high defect density in the prior art are solved, achieving high quality and uniformity of the β-Ga2O3 epitaxial layer and improving device performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUXI CHINA RESOURCES MICROELECTRONICS
- Filing Date
- 2024-12-03
- Publication Date
- 2026-06-05
AI Technical Summary
In the prior art, β-Ga2O3 heteroepitaxially grown films suffer from low crystal quality and high defect density, which affects the performance of β-Ga2O3-based devices.
A nitrided Ga2O3 buffer layer is used. By nitriding the Ga2O3 buffer layer in the MOCVD reaction chamber, highly uniform nucleation sites are formed, the grain boundary defect density is reduced, and a β-Ga2O3 epitaxial layer is grown on it.
It significantly improves the crystal quality and thickness uniformity of β-Ga2O3 epitaxial layers, reduces defect density, and enhances the performance of β-Ga2O3-based devices.
Smart Images
Figure CN122161215A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and more specifically to a β-Ga2O3 epitaxial structure, its manufacturing method, and semiconductor devices. Background Technology
[0002] As a novel ultrawide semiconductor material, Ga2O3 has a bandgap of 4.9 eV and a bandgap of 8 MV·cm. -1 With its theoretical field strength of 3444 and a Baliga figure of merit of 3444, Ga2O3-based devices can achieve both higher voltage withstand capability and lower power consumption, resulting in a significant improvement in energy conversion efficiency. Ga2O3-based devices have broad application prospects in the fields of solar-blind ultraviolet detection and high-power device fabrication.
[0003] Among them, β-Ga2O3 with a monoclinic phase is the most stable thermodynamic crystal structure. However, since the cost of β-Ga2O3 single crystal substrates is relatively high, heteroepitaxial growth is generally used to study the growth mechanism of β-Ga2O3 and to fabricate solar-blind ultraviolet detectors based on high-quality β-Ga2O3 thin films to characterize the material's response performance.
[0004] However, β-Ga2O3 films grown by heteroepitaxial growth in related technologies suffer from problems such as low crystal quality (large half-width at half-maximum) and high defect density.
[0005] Therefore, improvements are needed to at least partially address the aforementioned problems. Summary of the Invention
[0006] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This summary section is not intended to limit the key and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.
[0007] To at least partially solve the above-mentioned technical problems, this application provides a β-Ga2O3 epitaxial structure, comprising:
[0008] Substrate;
[0009] A nitrided Ga2O3 buffer layer is located on the substrate;
[0010] A β-Ga2O3 epitaxial layer is located on the nitrided Ga2O3 buffer layer.
[0011] For example, the substrate may include a sapphire substrate or a silicon substrate.
[0012] This application also provides a method for manufacturing a β-Ga2O3 epitaxial structure, comprising:
[0013] Provide substrate;
[0014] A Ga2O3 buffer layer is formed on the substrate;
[0015] The Ga2O3 buffer layer is subjected to nitriding treatment;
[0016] A β-Ga2O3 epitaxial layer is formed on the nitrided Ga2O3 buffer layer.
[0017] For example, the Ga2O3 buffer layer and the β-Ga2O3 epitaxial layer are grown in an MOCVD reaction chamber, and the Ga2O3 buffer layer is nitrided in the MOCVD reaction chamber.
[0018] For example, when the Ga2O3 buffer layer is nitrided in the MOCVD reaction chamber, the temperature is 500℃-700℃, the pressure is 40mbar-120mbar, the nitriding source is N2, the flow rate of the nitriding source is 50SLM-150SLM, and the nitriding time is 1min-15min.
[0019] For example, when the Ga2O3 buffer layer is formed in the MOCVD reaction chamber, the growth temperature is 400℃-600℃, the growth pressure is 40mbar-120mbar, the carrier gas is N2, the Ga source is TMGa or TEGa, the O source is O2, the VI / III ratio is 400-620, the flow rate is 100SLM-150SLM, and the growth time is 5min-15min.
[0020] For example, when the β-Ga2O3 epitaxial layer is formed in the MOCVD reaction chamber, the growth temperature is 800℃-1000℃, the growth pressure is 15mbar-60mbar, the carrier gas is N2, the Ga source is TMGa or TEGa, the O source is O2, the VI / III ratio is 400-1000, the flow rate is 130SLM-160SLM, and the growth time is 20min-60min.
[0021] For example, before forming the Ga2O3 buffer layer, a step of desorption treatment of the substrate is included.
[0022] In another aspect, this application provides a semiconductor device comprising the aforementioned β-Ga2O3 epitaxial structure, or comprising a β-Ga2O3 epitaxial structure manufactured using the aforementioned manufacturing method.
[0023] For example, the semiconductor device includes a solar-blind ultraviolet detector.
[0024] The β-Ga2O3 epitaxial structure, its manufacturing method, and semiconductor device of this application form a nitrided Ga2O3 buffer layer. The nitrided Ga2O3 buffer layer has a significantly reduced grain boundary defect density and highly uniform nucleation points, thereby reducing the defect density of the β-Ga2O3 epitaxial layer and improving the crystal quality and thickness uniformity of the β-Ga2O3 epitaxial layer. Attached Figure Description
[0025] The following drawings, which are incorporated herein by reference and are used to understand this application, illustrate embodiments of the invention and their descriptions to explain the principles of the invention.
[0026] In the attached image:
[0027] Figure 1 A cross-sectional schematic diagram of a β-Ga2O3 epitaxial structure according to an exemplary embodiment of this application is shown;
[0028] Figure 2 A flowchart illustrating a method for manufacturing a β-Ga2O3 epitaxial structure according to an exemplary embodiment of this application is shown. Detailed Implementation
[0029] The present application will now be described more fully with reference to the accompanying drawings, in which embodiments of the present application are illustrated. However, the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the present application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.
[0030] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.
[0031] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “under” the other element or feature will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.
[0032] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.
[0033] Embodiments of the application are described herein with reference to cross-sectional views illustrating ideal embodiments (and intermediate structures). Thus, variations from the shapes shown can be anticipated due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of the application should not be limited to the specific shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing processes. For example, implantation regions shown as rectangular typically have rounded or curved features at their edges and / or implantation concentration gradients, rather than a binary change from implantation regions to non-implantation regions. Similarly, buried regions formed by implantation can result in some implantation in the region between the buried region and the surface traversed during implantation. Therefore, the regions shown in the figures are substantially schematic, and their shapes are not intended to show the actual shapes of the regions of the device and are not intended to limit the scope of the application.
[0034] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art. It will also be understood that terms as defined in commonly used dictionaries shall be construed as having a meaning consistent with their meaning in the relevant field and / or the context of this specification, and not as interpreted in an ideal or overly formal sense, unless expressly defined herein.
[0035] To fully understand this application, a detailed structure will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.
[0036] In related technologies, in order to improve the crystal quality of β-Ga2O3 heteroepitaxial films, a Ga2O3 buffer layer is generally grown at low temperature on a hetero substrate (such as a sapphire substrate), and then a β-Ga2O3 epitaxial layer is grown on the Ga2O3 buffer layer.
[0037] However, this method has two drawbacks: First, the surface roughness and growth uniformity of the Ga2O3 buffer layer are much greater than those of the heterogeneous substrate, leading to significant differences in the thickness uniformity of the β-Ga2O3 epitaxial layer grown on the Ga2O3 buffer layer. Second, the Ga2O3 buffer layer grown at low temperatures has small grain size and high density, resulting in numerous grain boundary defects during grain merging. These defects extend to the β-Ga2O3 epitaxial layer on the Ga2O3 buffer layer. In other words, this method only provides a limited improvement in the crystal quality of the β-Ga2O3 epitaxial layer.
[0038] Therefore, in view of the aforementioned technical problems, this application proposes a β-Ga2O3 epitaxial structure, comprising:
[0039] Substrate;
[0040] A nitrided Ga2O3 buffer layer is located on the substrate;
[0041] The β-Ga2O3 epitaxial layer is located on the nitrided Ga2O3 buffer layer.
[0042] The β-Ga2O3 epitaxial structure of this application forms a nitrided Ga2O3 buffer layer. The nitrided Ga2O3 buffer layer has a significantly reduced grain boundary defect density and highly uniform nucleation sites, thereby reducing the defect density of the β-Ga2O3 epitaxial layer and improving the crystal quality and thickness uniformity of the β-Ga2O3 epitaxial layer.
[0043] Example 1
[0044] Below, for reference Figure 1 The β-Ga2O3 epitaxial structure in the embodiments of this application is described. Figure 1 A cross-sectional schematic diagram of a β-Ga2O3 epitaxial structure according to an exemplary embodiment of this application is shown.
[0045] In one example, such as Figure 1As shown, the β-Ga2O3 epitaxial structure of this application includes a substrate 100, a nitrided Ga2O3 buffer layer 110 on the substrate, and a β-Ga2O3 epitaxial layer 120 on the nitrided Ga2O3 buffer layer. Exemplarily, after the Ga2O3 buffer layer 110 is grown, it can be nitrided with N2 to obtain a nitrided Ga2O3 buffer layer 110. N2 does not react with the Ga2O3 buffer layer 110 to generate new material; that is, the material of the nitrided Ga2O3 buffer layer 110 remains unchanged. By nitriding the Ga2O3 buffer layer 110 with N2, better nucleation sites can be formed in the Ga2O3 buffer layer 110, and grain boundary defects in the Ga2O3 buffer layer 110 can be reduced. For example, the Ga2O3 buffer layer 110 of this application may also be referred to as an LT-Ga2O3 (Low Temperature-Ga2O3) buffer layer, and the β-Ga2O3 epitaxial layer 120 may also be referred to as an HT-Ga2O3 (High Temperature-Ga2O3) epitaxial layer. For example, the growth temperature of the Ga2O3 buffer layer 110 is lower than the growth temperature of the β-Ga2O3 epitaxial layer 120.
[0046] In one example, substrate 100 includes a sapphire substrate or a silicon substrate, or it may be any other suitable heterogeneous substrate. The β-Ga2O3 epitaxial structure of this application is a heterogeneous epitaxial structure. When substrate 100 is a sapphire substrate, substrate 100 may be a sapphire substrate with no bevel angle or a 6° bevel angle.
[0047] In one example, the nitrided Ga2O3 buffer layer 110 has highly uniform nucleation sites, which provides a good foundation for the growth of the β-Ga2O3 epitaxial layer 120 located on the Ga2O3 buffer layer 110. Specifically, the highly uniform nucleation sites can reduce dislocations and defects in the β-Ga2O3 epitaxial layer 120 epitaxially grown on the Ga2O3 buffer layer 110, thereby improving the crystal quality of the β-Ga2O3 epitaxial layer 120; at the same time, the highly uniform nucleation sites help to achieve a smoother film surface, thereby improving the thickness uniformity of the β-Ga2O3 epitaxial layer 120 epitaxially grown on the Ga2O3 buffer layer 110.
[0048] In one example, the grain boundary defect density caused by grain merging in the nitrided Ga2O3 buffer layer 110 is significantly reduced, thereby improving the crystal quality of the Ga2O3 buffer layer 110. This, in turn, significantly reduces the defect density in the β-Ga2O3 epitaxial layer 120 epitaxially grown on the Ga2O3 buffer layer 110, which can significantly improve the crystal quality of the β-Ga2O3 epitaxial layer 120 (significantly reduce the full width at half maximum value).
[0049] In summary, the β-Ga2O3 epitaxial structure of this application forms a nitrided Ga2O3 buffer layer. The grain boundary defect density of the nitrided Ga2O3 buffer layer is significantly reduced and it has highly uniform nucleation sites, thereby reducing the defect density of the β-Ga2O3 epitaxial layer and improving the crystal quality and thickness uniformity of the β-Ga2O3 epitaxial layer.
[0050] Example 2
[0051] In another embodiment of this application, a method for manufacturing a β-Ga2O3 epitaxial structure is provided, the method being used to manufacture the β-Ga2O3 epitaxial structure described in Embodiment 1.
[0052] The following reference Figure 1 and Figure 2 The present application describes a method for manufacturing a β-Ga2O3 epitaxial structure, wherein... Figure 1 This paper shows a schematic cross-sectional view of a β-Ga2O3 epitaxial structure according to an exemplary embodiment of this application. Figure 2 A flowchart illustrating a method for manufacturing a β-Ga2O3 epitaxial structure according to an exemplary embodiment of this application is shown. First, step S1 is performed, in which a substrate 100 is provided.
[0053] In one example, substrate 100 includes a sapphire substrate or a silicon substrate, or it may be any other suitable heterogeneous substrate. The β-Ga2O3 epitaxial structure of this application is a heterogeneous epitaxial structure. When substrate 100 is a sapphire substrate, substrate 100 may be a sapphire substrate with no bevel angle or a 6° bevel angle.
[0054] Next, step S2 is performed to form a Ga2O3 buffer layer 110 on the substrate 100.
[0055] In one example, a Ga2O3 buffer layer 110 is grown in a metal-organic chemical vapor deposition (MOCVD) reaction chamber. When growing the Ga2O3 buffer layer 110 in the MOCVD reaction chamber, the growth temperature (i.e., the temperature of the MOCVD reaction chamber) is 400℃-600℃, for example, 400℃, 450℃, 490℃, 500℃, 520℃, 550℃, 570℃, or 600℃; the growth pressure (i.e., the pressure of the MOCVD reaction chamber) is 40mbar-120mbar, for example, 40mbar, 50mbar, 60mbar, 70mbar, 80mbar, 90mbar, 100mbar, 110mbar, or 120mbar. The following parameters are specified: carrier gas is N2; Ga source is TMGa (trimethylgallium) or TEGa (triethylgallium); O source is O2; VI / III ratio is 400-620, for example, the VI / III ratio can be 400, 450, 500, 520, 550, 600 or 620; flow rate is 100SLM-150SLM, for example, the flow rate can be 100SLM, 110SLM, 120SLM, 130SLM, 140SLM or 150SLM; growth time is 5min-15min, for example, the growth time can be 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min or 15min. For example, a flow rate of 100SLM-150SLM means that the total flow rate of the carrier gas and the O source is 100SLM-150SLM. Exemplarily, the VI / III ratio is the molar ratio of group VI sources and group III sources introduced into the MOCVD reaction chamber; in this embodiment, the VI / III ratio is the molar ratio of O2 as an O source to TEGa or TMGa as a Ga source introduced into the MOCVD reaction chamber. Exemplarily, as a combined embodiment, when growing and forming the Ga2O3 buffer layer 110, the growth temperature, VI / III ratio, and growth time are 490°C, 520°C, and 9 min, respectively.
[0056] In one example, before forming the Ga2O3 buffer layer 110, a desorption treatment step is included for the substrate 100. Taking the substrate 100 as a sapphire substrate as an example, the desorption treatment of the substrate 100 includes: placing the substrate 100 in an MOCVD reaction chamber, treating the substrate 100 in an oxygen atmosphere for 5 min to 20 min, controlling the temperature at 750℃ to 980℃, and controlling the pressure at 100 mbar to 200 mbar, in order to remove impurities and organic contaminants from the surface of the substrate 100.
[0057] Next, step S3 is performed to nitrid the Ga2O3 buffer layer 110.
[0058] In one example, the Ga2O3 buffer layer 110 is nitrided within the MOCVD reaction chamber. During this nitriding process, the Ga and O sources are shut off, while the nitriding source is continuously supplied. The temperature (i.e., the temperature of the MOCVD reaction chamber) is 500℃-700℃, for example, 500℃, 550℃, 590℃, 600℃, 650℃, or 700℃; the pressure (i.e., the pressure of the MOCVD reaction chamber) is 40mbar-120mbar, for example, 40mbar... The temperature, flow rate, and nitriding time are 50 mbar, 60 mbar, 70 mbar, 80 mbar, 90 mbar, 100 mbar, 110 mbar, or 120 mbar; the nitriding source is N2, and the flow rate of the nitriding source is 50 SLM-150 SLM, for example, the flow rate of the nitriding source can be 50 SLM, 70 SLM, 90 SLM, 100 SLM, 120 SLM, or 150 SLM; the nitriding time is 1 min-15 min, for example, the nitriding time can be 1 min, 3 min, 5 min, 7 min, 10 min, 12 min, or 15 min. Exemplarily, as a combined embodiment, when nitriding the Ga2O3 buffer layer 110, the temperature, the flow rate of the nitriding source, and the nitriding time are 590°C, 100 SLM, and 7 min, respectively. In this process, N2, which serves as the nitriding source, does not react with the Ga2O3 buffer layer 110 to generate new material; that is, the material of the Ga2O3 buffer layer 110 after nitriding treatment remains unchanged. By using N2 to nitrid the Ga2O3 buffer layer 110, the Ga2O3 buffer layer 110 can form better nucleation sites and reduce grain boundary defects.
[0059] Next, step S4 is performed to form a β-Ga2O3 epitaxial layer 120 on the nitrided Ga2O3 buffer layer 110.
[0060] In one example, a β-Ga2O3 epitaxial layer 120 is grown in an MOCVD reaction chamber. When the β-Ga2O3 epitaxial layer 120 is grown in the MOCVD reaction chamber, the growth temperature (i.e., the temperature of the MOCVD reaction chamber) is 800℃-1000℃, for example, the growth temperature can be 800℃, 850℃, 870℃, 900℃, 950℃ or 1000℃; the growth pressure (i.e., the pressure of the MOCVD reaction chamber) is 15mbar-60mbar, for example, the growth pressure can be 15mbar, 30mbar, 40mbar, 50mbar, 55mbar or 60mbar; the carrier gas is N2. The Ga source is TMGa (trimethylgallium) or TEGa (triethylgallium); the O source is O2; the VI / III ratio is 400-1000, for example, the VI / III ratio can be 400, 500, 570, 600, 700, 800, 900 or 1000; the flow rate is 130SLM-160SLM, for example, the flow rate can be 130SLM, 140SLM, 150SLM or 160SLM; the growth time is 20min-60min, for example, the growth time can be 20min, 25min, 30min, 35min, 40min, 45min, 50min, 55min or 60min. For example, a flow rate of 130SLM-160SLM means that the total flow rate of the carrier gas and the O source is 130SLM-160SLM. Exemplarily, the VI / III ratio is the molar ratio of group VI sources and group III sources introduced into the MOCVD reaction chamber; in this embodiment, the VI / III ratio is the molar ratio of O2 as an O source to TEGa or TMGa as a Ga source introduced into the MOCVD reaction chamber. Exemplarily, as a combined embodiment, when growing and forming the β-Ga2O3 epitaxial layer 120, the growth temperature, VI / III ratio, and growth time are 870°C, 570°C, and 35 min, respectively.
[0061] In one example, after forming the β-Ga2O3 epitaxial layer 120, a cooling process is included for the β-Ga2O3 epitaxial structure: the carrier gas is oxygen or oxygen plus nitrogen; the MOCVD reaction chamber temperature is controlled at 800℃-1000℃; the pressure is controlled at 20mbar-80mbar; and the duration is 3min-10min. Then, the MOCVD reaction chamber temperature is reduced to below 150℃. This cooling process alleviates the roughness problem caused by rapid cooling of the β-Ga2O3 epitaxial structure.
[0062] In one example, the nitrided Ga2O3 buffer layer 110 has highly uniform nucleation sites, which provides a good foundation for the growth of the β-Ga2O3 epitaxial layer 120 located on the Ga2O3 buffer layer 110. Specifically, the highly uniform nucleation sites can reduce dislocations and defects in the β-Ga2O3 epitaxial layer 120 epitaxially grown on the Ga2O3 buffer layer 110, thereby improving the crystal quality of the β-Ga2O3 epitaxial layer 120; at the same time, the highly uniform nucleation sites help to achieve a smoother film surface, thereby improving the thickness uniformity of the β-Ga2O3 epitaxial layer 120 epitaxially grown on the Ga2O3 buffer layer 110.
[0063] In one example, the grain boundary defect density caused by grain merging in the nitrided Ga2O3 buffer layer 110 is significantly reduced, thereby improving the crystal quality of the Ga2O3 buffer layer 110. This, in turn, significantly reduces the defect density in the β-Ga2O3 epitaxial layer 120 epitaxially grown on the Ga2O3 buffer layer 110, which can significantly improve the crystal quality of the β-Ga2O3 epitaxial layer 120 (significantly reduce the full width at half maximum value).
[0064] In summary, the method for manufacturing the β-Ga2O3 epitaxial structure of this application forms a nitrided Ga2O3 buffer layer. The nitrided Ga2O3 buffer layer has a significantly reduced grain boundary defect density and highly uniform nucleation points, thereby reducing the defect density of the β-Ga2O3 epitaxial layer and improving the crystal quality and thickness uniformity of the β-Ga2O3 epitaxial layer.
[0065] Example 3
[0066] In another embodiment of this application, a semiconductor device is provided, which includes the β-Ga2O3 epitaxial structure described in Embodiment 1, or the β-Ga2O3 epitaxial structure manufactured using the manufacturing method described in Embodiment 2. The semiconductor device includes a solar-blind ultraviolet detector. Due to the inclusion of the aforementioned β-Ga2O3 epitaxial structure, the solar-blind ultraviolet detector has higher response performance. Alternatively, the semiconductor device may also be a power semiconductor device.
[0067] Although several embodiments have been described herein, it should be understood that many other modifications and embodiments will arise in the mind of those skilled in the art, all of which will fall within the spirit and scope of the concept disclosed herein. More specifically, various modifications and changes may be made in terms of the arrangement and / or components of the subject matter within the scope of this disclosure, the drawings, and the appended claims. In addition to modifications and changes in the components and / or arrangement, the use of alternative methods will also be obvious to those skilled in the art.
Claims
1. A β-Ga₂O₃ epitaxial structure, characterized in that, include: Substrate; A nitrided Ga2O3 buffer layer is located on the substrate; A β-Ga2O3 epitaxial layer is located on the nitrided Ga2O3 buffer layer.
2. The epitaxial structure according to claim 1, characterized in that, The substrate may be a sapphire substrate or a silicon substrate.
3. A method for manufacturing a β-Ga2O3 epitaxial structure, characterized in that, include: Provide substrate; A Ga2O3 buffer layer is formed on the substrate; The Ga2O3 buffer layer is subjected to nitriding treatment; A β-Ga2O3 epitaxial layer is formed on the nitrided Ga2O3 buffer layer.
4. The manufacturing method according to claim 3, characterized in that, The Ga2O3 buffer layer and the β-Ga2O3 epitaxial layer are grown in the MOCVD reaction chamber, and the Ga2O3 buffer layer is nitrided in the MOCVD reaction chamber.
5. The manufacturing method according to claim 4, characterized in that, When the Ga2O3 buffer layer is nitrided in the MOCVD reaction chamber, the temperature is 500℃-700℃, the pressure is 40mbar-120mbar, the nitriding source is N2, the flow rate of the nitriding source is 50SLM-150SLM, and the nitriding time is 1min-15min.
6. The manufacturing method according to claim 4, characterized in that, When the Ga2O3 buffer layer is formed in the MOCVD reaction chamber, the growth temperature is 400℃-600℃, the growth pressure is 40mbar-120mbar, the carrier gas is N2, the Ga source is TMGa or TEGa, the O source is O2, the VI / III ratio is 400-620, the flow rate is 100SLM-150SLM, and the growth time is 5min-15min.
7. The manufacturing method according to claim 4, characterized in that, When the β-Ga2O3 epitaxial layer is formed in the MOCVD reaction chamber, the growth temperature is 800℃-1000℃, the growth pressure is 15mbar-60mbar, the carrier gas is N2, the Ga source is TMGa or TEGa, the O source is O2, the VI / III ratio is 400-1000, the flow rate is 130SLM-160SLM, and the growth time is 20min-60min.
8. The manufacturing method according to any one of claims 3 to 7, characterized in that, Before forming the Ga2O3 buffer layer, the process also includes a step of desorption treatment of the substrate.
9. A semiconductor device, characterized in that, It includes the β-Ga2O3 epitaxial structure according to any one of claims 1-2, or it includes the β-Ga2O3 epitaxial structure obtained by the manufacturing method according to any one of claims 3-8.
10. The semiconductor device according to claim 9, characterized in that, The semiconductor device includes a solar-blind ultraviolet detector.