A display panel
By setting an anti-permeation layer on the soldering electrodes of the light-emitting diode, the problems of encapsulation yield and reliability caused by solder paste penetration are solved, achieving efficient soldering protection and cost reduction.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUANGDONG JINGXIANG PHOTOELECTRIC TECH CO LTD
- Filing Date
- 2022-09-27
- Publication Date
- 2026-06-05
AI Technical Summary
In existing display panels, solder paste and flux can easily penetrate into the LEDs during soldering, causing chip leakage and affecting product packaging yield and reliability.
The design employs an anti-permeability layer, comprising periodically stacked titanium and aluminum metal layers, which are placed on the welding electrode to prevent solder penetration and extend into the insulation layer to protect the internal structure.
It effectively prevents solder from seeping in, improves the packaging yield and reliability of light-emitting diodes, simplifies the driving circuit structure, and reduces the cost of display panels.
Smart Images
Figure CN122161238A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductors, and in particular to a display panel. Background Technology
[0002] Light-emitting diodes (LEDs) are characterized by low energy consumption and high luminous efficiency, and are widely used in various backlights or display panels to form LED display panels.
[0003] A large number of light-emitting diodes (LEDs) need to be placed on a display backplane, with each LED forming a sub-pixel unit within a pixel unit. However, issues such as LED brightness, driving, the cost of red LEDs, and soldering processes affect the yield rate of the display panel manufacturing process. During the manufacturing of the display panel, flip-chip LEDs need to be soldered onto the display backplane. During soldering, solder paste and flux can easily penetrate into the LEDs, causing chip leakage and affecting the yield and reliability of the product package. Summary of the Invention
[0004] In view of the deficiencies of the prior art, the present invention proposes a display panel, comprising: Drive backplane; Multiple light-emitting diodes (LEDs) are electrically connected to the driving backplane, and the LEDs include: Substrate; A first epitaxial structure is disposed on the substrate, and the first epitaxial structure includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked together. A first insulating layer is disposed on the first epitaxial structure; A reflective layer is disposed on the first insulating layer; and A second insulating layer is disposed on the reflective layer, and the second insulating layer covers the reflective layer; The first electrode is electrically connected to the first semiconductor layer; The second electrode is electrically connected to the second semiconductor layer, and the first electrode and the second electrode are provided with an anti-permeation layer, the anti-permeation layer extends from the reflective layer to the second insulating layer, and the anti-permeation layer is higher than the second insulating layer; The impermeable layer comprises a first layer and a second layer that are periodically stacked, wherein the first layer is a titanium metal layer and the second layer is an aluminum metal layer. In this embodiment, a second epitaxial structure is provided on the second surface of the substrate of a portion of the light-emitting diode to convert the light of the light-emitting diode into light of other colors, and the first surface and the second surface are two opposite surfaces of the substrate.
[0005] In one embodiment of the present invention, the first electrode and the second electrode include a connecting electrode, and the connecting electrode extends from the first semiconductor layer or the second semiconductor layer into the first insulating layer.
[0006] In one embodiment of the present invention, the first electrode and the second electrode include a welding electrode, the welding electrode being connected to the connecting electrode and extending from the first insulating layer to the surface of the second insulating layer.
[0007] In one embodiment of the present invention, the welding electrode includes a contact layer disposed on the connecting electrode and extending from the first insulating layer into the reflective layer.
[0008] In one embodiment of the present invention, the welding electrode includes an anti-permeability layer disposed on the contact layer and extending out of the surface of the second insulating layer.
[0009] In one embodiment of the present invention, the impermeable layer includes a first stack and a second stack arranged in a periodic manner.
[0010] In one embodiment of the present invention, the welding electrode includes a welding layer, which is disposed on the anti-permeability layer.
[0011] In one embodiment of the present invention, the second semiconductor layer includes multiple scattering layers.
[0012] This invention also provides a method for manufacturing a light-emitting diode, comprising the following steps: Provide a substrate; A first epitaxial structure is formed on the substrate, the first epitaxial structure comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked thereon; A first electrode is formed that is connected to the first semiconductor layer; A second electrode is formed that is connected to the second semiconductor layer; A first insulating layer is formed on the first epitaxial structure; A reflective layer is formed on the first insulating layer; and A second insulating layer is formed on the reflective layer and the second insulating layer covers the reflective layer.
[0013] This application also provides a light-emitting diode display panel, including the light-emitting diodes as described in any of the above claims.
[0014] In summary, this invention proposes a display panel that simplifies the structure of the driving circuit and reduces the cost of the display panel. Attached Figure Description
[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0016] Figure 1 : A schematic diagram of the structure of the light-emitting diode in this application.
[0017] Figure 2 : A detailed structural diagram of the first extensional structure in this application.
[0018] Figure 3 : A schematic diagram of the structure in this application in which a first epitaxial structure is formed on a substrate.
[0019] Figure 4 : A schematic diagram of the structure forming the reflective layer and the insulating layer in this application.
[0020] Figure 5 : A schematic diagram of the structure forming the welding electrode in this application.
[0021] Figure 6 This application presents a schematic diagram of a light-emitting diode structure with multiple insulating layers and special electrodes.
[0022] Figure 7 : A schematic diagram of the structure of a welding electrode in this application.
[0023] Figure 8 : A schematic diagram of a light-emitting diode structure with multiple reflective layers in this application.
[0024] Figure 9 : A schematic diagram of a light-emitting diode structure with a specially shaped welding electrode in this application.
[0025] Figure 10 : A schematic diagram of a light-emitting diode structure with a specially shaped welding electrode in this application.
[0026] Figure 11 : A schematic diagram of a light-emitting diode structure with a specially shaped welding electrode in this application.
[0027] Figure 12 : A schematic diagram of a light-emitting diode with an obtuse angle in this application.
[0028] Figure 13 : Structural diagrams of the first angle, second angle and fourth angle in this application.
[0029] Figure 14 : A structural schematic diagram from the third angle in this application.
[0030] Figure 15 : A schematic diagram of a light-emitting diode structure with a brightness enhancement substrate in this application.
[0031] Figure 16 : A schematic diagram of the structure of a light-emitting diode display panel in this application. Detailed Implementation
[0032] The following specific examples illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. The terminology used in this specification is for the purpose of describing specific embodiments only and is not intended to limit the scope of this application.
[0033] In the description of this application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," and "right," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0034] Light-emitting diode (LED) display panels are widely used in various electronic devices due to their advantages such as long lifespan, high contrast, high resolution, fast response time, wide viewing angle, rich colors, ultra-high brightness, and low power consumption. Examples include televisions, laptops, monitors, mobile phones, watches, wearable displays, automotive devices, virtual reality (VR) devices, augmented reality (AR) devices, portable electronic devices, game consoles, and other electronic devices.
[0035] Please see Figure 16As shown, the light-emitting diode (LED) display panel includes a driving backplate 201 and pixel units disposed on the driving backplate 201. A driving circuit is disposed on the driving backplate 201. When LEDs 10 are bonded to the driving backplate 201, the driving circuit on the driving substrate is electrically connected to the LEDs 10 to control the LEDs 10 to turn on and off. The driving circuit is, for example, a thin-film transistor (TFT) circuit. Each pixel unit includes multiple sub-pixels, and each pixel unit includes at least, for example, one red sub-pixel, one green sub-pixel, and one blue sub-pixel. The driving circuit controls each sub-pixel to emit light independently, then forms color mixing, and finally causes the pixel unit to emit a preset colored light. The light-emitting pixel array formed by multiple pixel units can realize the color display effect of the display panel. In some embodiments, the light-emitting unit includes LEDs 10 of multiple colors, such as red LEDs, green LEDs, and blue LEDs. Each LED 10 then corresponds to a sub-pixel.
[0036] In some embodiments, an encapsulation layer 202 is provided on the pixel unit, the encapsulation layer 202 covers the light-emitting unit and fills the gap between adjacent pixel units.
[0037] In some embodiments, the light-emitting diode is a sub-millimeter light-emitting diode (Mini LED) or a micrometer light-emitting diode (Micro LED).
[0038] Please see Figure 1 As shown, in one embodiment of the present invention, a light-emitting diode includes a substrate 100 and a first epitaxial structure disposed on a first surface of the substrate 100. In this application, the substrate 100 can be a silicon substrate or a sapphire substrate. In this application, the substrate 100 is a transparent substrate. The first epitaxial structure includes a first semiconductor layer 101, a light-emitting layer 102, and a second semiconductor layer 103 stacked together. The first semiconductor layer 101 and the second semiconductor layer 103 are semiconductor layers of different types, one being a P-type semiconductor layer and the other an N-type semiconductor layer. Holes are provided in the P-type semiconductor layer for the light-emitting layer 102, while electrons are provided in the N-type semiconductor layer for the light-emitting layer 102. When a voltage is applied to the first semiconductor layer 101 and the second semiconductor layer 103, holes in the P-type semiconductor layer and photons in the N-type semiconductor layer recombine in the light-emitting layer 102, emitting energy in the shape of photons, thereby causing the first epitaxial structure to emit light.
[0039] This application does not limit the specific types of the first semiconductor layer 101 and the second semiconductor layer 103. In this embodiment, the first semiconductor layer 101 is an N-type semiconductor layer, and the second semiconductor layer 103 is a P-type semiconductor layer. In other embodiments, the first semiconductor layer 101 is a P-type semiconductor layer, and the second semiconductor layer 103 is an N-type semiconductor layer. In some embodiments, to improve the display efficiency of the light-emitting diode, multiple other functional layers are provided in the first epitaxial structure to reduce defects in the semiconductor layers and improve the brightness of the first epitaxial structure.
[0040] For details, please refer to Figure 2 As shown, Figure 2 This is a detailed structural diagram of the first epitaxial structure in this application. In one embodiment of this application, a buffer layer 1001 is further disposed on the substrate 100. The buffer layer 1001 is, for example, an aluminum nitride layer or an aluminum gallium nitride layer, to improve lattice defects between the substrate 100 and the gallium nitride layer.
[0041] Please see Figure 2 As shown in one embodiment of this application, an undoped gallium nitride layer 1111 is disposed on the buffer layer 1001. Specifically, ammonia and trimethylgallium (TMGa) are introduced into the reaction chamber at a temperature of, for example, 1000~1200℃, or 1050℃~1200℃, and a reaction chamber pressure of, for example, 100Torr~500Torr, or 200Torr~500Torr, to grow a gallium nitride layer with a thickness of, for example, 10000Å~30000Å on the buffer layer 1001, forming an undoped gallium nitride layer 1111. By disposing of the buffer layer 1001 and the undoped gallium nitride layer 1111 between the substrate 100 and the first semiconductor layer 101, the lattice mismatch problem between the substrate 100 and the first semiconductor layer 101 can be mitigated, improving the quality of the first epitaxial structure.
[0042] Please see Figure 2 As shown, in one embodiment of this application, a first semiconductor layer 101 is disposed on an undoped gallium nitride layer 1111, and the first semiconductor layer 101 is an N-type semiconductor layer with a higher electron content. The first semiconductor layer 101 is doped with donor impurities, such as silicon (Si) or tellurium (Te). In this embodiment, the first semiconductor layer 101 is an N-type gallium nitride (GaN) layer. In other embodiments, the first semiconductor layer 101 can be an N-type gallium arsenide (GaAs) layer or a gallium phosphide (GaP) layer.
[0043] Please see Figure 2As shown, in this application, the light-emitting layer 102 can be a quantum well light-emitting layer 102, or an intrinsic semiconductor layer or a lightly doped semiconductor layer. In this embodiment, the light-emitting layer 102 includes a potential well layer and a potential barrier layer that are periodically stacked. The material of the barrier layer includes, for example, a GaN / AlGaN superlattice structure, and the material of the potential well layer is, for example, InGaN. The thickness of the light-emitting layer 102 is, for example, 200 nm to 300 nm, and the thickness of the potential well layer in each period is, for example, 3 nm to 4 nm, and the thickness of the potential barrier layer in each period is, for example, 12 nm to 16 nm. The thickness of the GaN constituting the potential barrier layer is, for example, 1.5 nm to 3 nm, and the thickness of the AlGaN constituting the potential barrier layer is, for example, 1.5 nm to 3 nm. In this embodiment, the light-emitting layer 102 adopts a modulation-doped GaN / AlGaN superlattice structure, which can effectively guide the impulse current and make the pulse current conduct in the two-dimensional electron gas of the GaN / AlGaN structure in the lateral direction, so that the density distribution of the pulse current is more uniform and can effectively improve the recombination efficiency of electrons and holes.
[0044] Please see Figure 2 As shown in one embodiment of this application, a superlattice buffer layer 1112 is further disposed between the first semiconductor layer 101 and the light-emitting layer 102. The superlattice buffer layer 1112 includes, for example, periodic InGaN and GaN stacked layers. Furthermore, the superlattice buffer layer 1112 is doped with silicon (Si), which can reduce the lattice difference between the undoped gallium nitride layer 1111 and the light-emitting layer 102, resulting in better growth of the quantum well light-emitting layer 102.
[0045] Please see Figure 2 As shown, in one embodiment of this application, a stacked layer 1113 is further disposed on the light-emitting layer 102. In this application, the stacked layer 1113 is an undoped gallium nitride layer 1111. The stacked layer 1113 in this application is disposed between the light-emitting layer 102 and the second semiconductor layer 103, which can protect the light-emitting layer 102 from interference from the second semiconductor layer 103.
[0046] Please see Figure 2 As shown, in one embodiment of this application, the second semiconductor layer 103 is disposed on the stacked layer 1113, and the second semiconductor layer 103 is a P-type semiconductor layer with a large number of holes, and the dopant in the second semiconductor layer 103 is an acceptor impurity, such as magnesium (Mg) or zinc (Zn). In this embodiment, the second semiconductor layer 103 can be a P-type gallium nitride (GaN) layer. In other embodiments, the second semiconductor layer 103 can be a P-type gallium arsenide (GaAs) layer or gallium phosphide (GaP) layer.
[0047] Please see Figure 2As shown, in one embodiment of this application, at least two scattering layers are provided in the second semiconductor layer 103, dividing the second semiconductor layer 103 into at least two sub-semiconductor layers. In this application, for example, three scattering layers are provided, specifically including a first scattering layer 1114, a second scattering layer 1115, and a third scattering layer 1116. The first scattering layer 1114 and the second scattering layer 1115 divide the second semiconductor layer 103 into a first sub-semiconductor layer 1031 and a second sub-semiconductor layer 1032. The first scattering layer 1114 is located on the stacked layer 1113, the first sub-semiconductor layer 1031 is located on the first scattering layer 1114, the second sub-semiconductor layer 1032 is located on the second scattering layer 1115, and the third scattering layer 1116 is located on the second sub-semiconductor layer 1032.
[0048] Please refer to Figure 2. In one embodiment of this application, the first scattering layer 1114 is an aluminum nitride layer, specifically Al. x Ga 1- x N, where x ranges from 0.1 to 0.2. The first scattering layer 1114 is doped with Mg ions, and the doping concentration of Mg ions is 1×10E. 19 atom / cm 3 ~9×10E 19 atom / cm 3 The thickness of the first scattering layer 1114 is 15 Å to 20 Å. The first scattering layer 1114 can be deposited using metal-organic chemical vapor deposition (MOCVD). Specifically, during the reaction, nitrogen and ammonia gases are introduced into the reaction chamber at a temperature of, for example, 700°C to 800°C and a pressure of, for example, 150 Torr to 200 Torr, with a gas ratio of, for example, N2:NH3 = 1:1, to form the first scattering layer 1114. A first sub-semiconductor layer 1031 is located on the first scattering layer 1114, and the first sub-semiconductor layer 1031 is a p-type gallium nitride layer.
[0049] Please refer to Figure 2. In one embodiment of this application, the second scattering layer 1115 is an aluminum nitride layer, specifically Al. y Ga 1- y N, where y ranges from 0.15 to 0.25. The second scattering layer 1115 is doped with Mg ions, and the doping concentration of Mg ions is 1×10E. 19 atom / cm 3 ~9×10E 19 atom / cm 3The thickness of the second scattering layer 1115 is 15 Å to 30 Å. The second scattering layer 1115 can be deposited using metal-organic chemical vapor deposition (MOCVD). Specifically, during the reaction, nitrogen and ammonia are introduced into the reaction chamber at a temperature of, for example, 890°C to 940°C and a pressure of, for example, 100 Torr to 150 Torr, with a gas ratio of, for example, N2:NH3 = 5:1, to form the second scattering layer 1115. A second sub-semiconductor layer 1032 is located on the second scattering layer 1115, and the second sub-semiconductor layer 1032 is a p-type gallium nitride layer.
[0050] Please refer to Figure 2. In one embodiment of this application, the third scattering layer 1116 is located on the second sub-semiconductor layer 1032, and the third scattering layer 1116 is the contact layer. Specifically, the third scattering layer 1116 is AlzGa1-zN, where the value of z ranges from 0.1 to 0.2. The third scattering layer 1116 is doped with Mg ions, and the doping concentration of Mg ions is 1×10E. 20 atom / cm 3 ~9×10E 20 atom / cm 3 The thickness of the third scattering layer 1116 is 30 Å to 45 Å. The third scattering layer 1116 can be deposited using metal-organic chemical vapor deposition (MOCVD). Specifically, nitrogen, hydrogen, and ammonia are introduced into the reaction chamber at a temperature of, for example, 980°C to 1030°C and a pressure of, for example, 200 Torr to 600 Torr, with a gas ratio of, for example, N2:H2:NH3 = 1:2:1, to form the third scattering layer 1116.
[0051] Please see Figure 2 As shown, in one embodiment of this application, aluminum has an oscillatory transmission effect on visible light, which can reduce the absorption of light by magnesium ions, and therefore can be used as a light transporter. The light-collecting channel formed in the scattering layer allows the light in the light-emitting layer 102 to be projected out, and the third scattering layer 1116 disposed at the top can spread the current on the surface of the second semiconductor layer 103 to achieve the requirement of high luminous efficiency.
[0052] Please see Figure 1As shown, in one embodiment of this application, a transparent conductive layer 104 is provided on the surface of the second semiconductor layer 103. The transparent conductive layer 104 can be a metal oxide or alloy oxide deposited or sputtered on the second semiconductor layer 103. Specifically, it can be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or azo oxide (AzO), or it can be an oxide of alloys such as nickel-gold (NiAu) or ruthenium-gold (RuAu). The thickness of the transparent conductive layer 104 is, for example, 5 nm to 300 nm. When an electrode contacts the transparent conductive layer 104, it can achieve good conductivity with the electrode.
[0053] Please see Figure 1 and Figure 3 As shown, in this application, the transparent conductive layer 104 covers a portion of the second semiconductor layer 103 and exposes a portion of the second semiconductor layer 103, forming a step 1041. In this application, a groove 1010 is also provided around the periphery of the first epitaxial structure. During the formation of the light-emitting diode, the periphery of the first epitaxial structure can be etched to form the groove 1010. The bottom of the groove 1010 is in contact with the substrate 100.
[0054] Please see Figure 4 and Figure 5 As shown, in one embodiment of this application, a first electrode electrically connected to the first semiconductor layer 101 and a second electrode electrically connected to the second semiconductor layer 103 are further provided. In this embodiment, the first electrode includes a first connection electrode 1091 connected to the first semiconductor layer 101, and the second electrode includes a second connection electrode 1092 connected to the second semiconductor layer 103. The first connection electrode 1091 is disposed on the second semiconductor layer 103, extends into the first semiconductor layer 101, and is connected to the first semiconductor layer 101. The second connection electrode 1092 is disposed on the transparent conductive layer 104 and is connected to the transparent conductive layer 104. The first connection electrode 1091 and the second connection electrode 1092 can be made of metals or alloys with good conductivity. The first connection electrode 1091 is, for example, made of Ni, Au, or alloys thereof. The second connection electrode 1092 is, for example, made of Ti, Al, Ni, Au, or alloys of two or more of these.
[0055] Please see Figure 1 , Figure 4 and Figure 5 As shown, a reflective layer 107 and an insulating layer 108 are disposed on the first epitaxial structure. The present invention does not limit the specific structure or deposition order of the reflective layer 107 and the insulating layer 108; it is sufficient to achieve the reflection of light from the first epitaxial structure and the protection of the internal structure of the light-emitting diode.
[0056] Please see Figure 1As shown, in one embodiment of this application, a reflective layer 107 is disposed on the first epitaxial structure, and an insulating layer 108 is disposed on the reflective layer 107, extending towards and filling the groove 1010. The reflective layer 107 can reflect light toward the second semiconductor layer 103 and emit light toward the first semiconductor layer 101. Specifically, the reflective layer 107 can be a distributed Bragg reflection (DBR) layer 107, or a silver reflective layer 107 or an aluminum reflective layer 107. The thickness of the reflective layer 107 is, for example, 300 nm to 5000 nm.
[0057] Please see Figure 1 As shown, in one embodiment of this application, the insulating layer 108 can be made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), or zinc oxide (ZnO). On the first epitaxial structure, the thickness of the insulating layer 108 is, for example, 100 nm to 600 nm. Forming a thicker insulating layer can prevent damage to the interior of the light-emitting diode during soldering and prevent solder penetration.
[0058] Please see Figure 1 As shown in this application, the first electrode further includes a first welding electrode 1101, and the second electrode further includes a second welding electrode 1102. The first welding electrode 1101 is connected to the first connecting electrode 1091, and the second welding electrode 1102 is connected to the second connecting electrode 1092.
[0059] Please see Figure 1 As shown, in one embodiment of this application, the first connecting electrode 1091 and the second connecting electrode 1092 are encased within an insulating layer 108, and the first welding electrode 1101 extends beyond the insulating layer 108. The second welding electrode 1102 also extends beyond the insulating layer 108. In other embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 extend beyond the insulating layer 108. The first welding electrode 1101 and the second welding electrode 1102 are disposed on the surface of the insulating layer 108. The first welding electrode 1101 and the second welding electrode 1102 may comprise multiple metal layers, such as one, two, or more of the following metal layers: chromium (Cr) metal layer, titanium (Ti) metal layer, aluminum (Al) metal layer, platinum (Pt) metal layer, nickel (Ni) metal layer, gold (Au) metal layer, and tin (Sn) metal layer. The thickness of the first welding electrode 1101 and the second welding electrode 1102 is, for example, 1 μm to 50 μm.
[0060] Please see Figure 1As shown, in some embodiments of this application, in a light-emitting diode display panel, a second epitaxial structure 111 is provided on the second surface of the substrate 100 of a portion of the light-emitting diodes to convert the light from the light-emitting diodes into light of other colors. The first surface and the second surface are two opposing surfaces of the substrate 100.
[0061] Please see Figure 1 As shown, in some embodiments of this application, a second epitaxial structure 111 is formed on the surface of the substrate 100 away from the first epitaxial structure, and the second epitaxial structure 111 is bonded to the surface of the transparent conductive layer 104, for example, through a bonding layer 105. The bonding layer 105 can be a transparent adhesive layer, specifically made of materials such as silicon dioxide (SiO2), silicon nitride (SiNx), titanium dioxide (TiO2), titanium pentoxide (Ti2O5), magnesium fluoride (MgF), aluminum nitride (AlN), and aluminum oxide (Al2O3). In this embodiment, the thickness of the bonding layer 105 is 1µm to 500µm. For different materials, it can be formed by methods such as evaporation, sputtering, or plasma-enhanced chemical vapor deposition (PECVD), depending on the material used.
[0062] Please see Figure 1As shown, in one embodiment of this application, the second epitaxial structure 111 covers the second surface of the substrate 100. The semiconductor structure in the second epitaxial structure 111 is different from the semiconductor structure in the first epitaxial structure, and the first and second epitaxial structures emit light in different wavelengths, which can convert the light emitted by the first epitaxial structure into light of other colors. The material of the second epitaxial structure 111 is set as a group III-V element compound. Specifically, when it is necessary to convert the light of the light-emitting diode into red light, the second epitaxial structure 111 is made of materials such as gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs) to convert the light emitted by the first epitaxial structure into red light. In other embodiments, the second epitaxial structure 111 can be made of materials such as indium gallium arsenide (InGaAs), indium gallium phosphide (InGaP), gallium phosphide (GaP), gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium phosphide (InP), indium nitride (InN), or indium gallium nitride (InGaN). On one hand, the second epitaxial structure 111 can convert the light from the light-emitting diode into other colors. When the light emitted by the first epitaxial structure shines on the second epitaxial structure 111, the second epitaxial structure 111 emits light, and the color of the light emitted by the second epitaxial structure 111 is determined by the material of the second epitaxial structure 111. On the other hand, the second epitaxial structure 111 can withstand higher temperatures, thus protecting the internal structure of the light-emitting diode. In one embodiment, the wavelength range of the light emitted by the second epitaxial structure 111 is 600nm~800nm.
[0063] Please see Figure 1 As shown, in one embodiment of this application, the second epitaxial structure 111 can be pressed for 30 min to 300 min at a temperature of, for example, 150°C to 300°C and a pressure of 1000 kg to 5000 kg, so that the second epitaxial structure 111 is bonded to the substrate 100.
[0064] Please see Figure 1 As shown in this application, when the light emitted by the first epitaxial structure is converted by the second epitaxial structure 111, it forms a blue light-emitting diode (LED) sub-pixel in a LED display panel. In a pixel unit, a first epitaxial structure emitting blue light is used to form a blue LED, and a first epitaxial structure emitting green light is used to form a green LED, which is also a green sub-pixel. In the LED forming the red sub-pixel, a first epitaxial structure emitting blue or green light is provided, and a second epitaxial structure is also provided on the substrate. The second epitaxial structure converts the light from the first epitaxial structure into red light, forming a red sub-pixel. When all first epitaxial structures are either blue or green light-emitting, the driving voltage of each LED can remain the same, simplifying the structure of the driving circuit. Furthermore, red LEDs made using red epitaxial structures are expensive; using the second epitaxial structure can reduce the cost of the display panel.
[0065] Please see Figure 1 As shown, in one embodiment of this application, a light-shielding layer 112 is further disposed around the substrate 100, surrounding the substrate 100 and covering the side surface of the substrate 100. The thickness of the light-shielding layer 112 is, for example, 100 nm to 100 nm. The light-shielding layer 112 is an opaque white anti-permeability layer, a black anti-permeability layer, or a high-reflectivity layer. The white anti-permeability layer can be made of zirconium oxide, and the black anti-permeability layer can be made of resin doped with black powder. The light-shielding layer 112 can cover or reflect the original light color of the first epitaxial structure, preventing the light emitted by the first epitaxial structure from mixing with the light emitted by the second epitaxial structure 111.
[0066] Please see Figures 1 to 5 As shown in this application, when forming the light-emitting diode, a first semiconductor layer 101, a light-emitting layer 102, a second semiconductor layer 103, and other functional layers, i.e., the first epitaxial structure, can be sequentially formed on one side of the substrate 100. Then, a transparent conductive layer 104 is formed on the second semiconductor layer 103, exposing a portion of the second semiconductor layer 103. Next, the first epitaxial structure is etched to form a groove 1041. A first connection electrode 1091, connected to the first semiconductor layer 101, is formed on the second semiconductor layer 103, and a second connection electrode 1092 is formed on the transparent conductive layer 104. Next, a reflective layer 107 is formed sequentially on the second semiconductor layer 103 and the transparent conductive layer 104. Then, an insulating layer 108 is deposited or sputtered on the reflective layer 107 and in the groove 1041, and the insulating layer 108 and the reflective layer 107 are etched to form contact holes exposing the first connection electrode 1091 and the second connection electrode 1092. The first welding electrode 1101 and the second welding electrode 1102 are then deposited sequentially in the contact holes. Afterward, a second epitaxial structure 111 is bonded on the other side of the substrate 100 using a bonding layer 105, and a light-shielding layer 112 is deposited or sputtered on the outer sidewall of the substrate 100.
[0067] Please see Figures 6 to 7 As shown in some embodiments of this application, multiple insulating layers are provided to ensure that solder does not penetrate into the interior of the light-emitting diode during soldering. Furthermore, an anti-penetration layer is provided in the electrode at the top insulating layer to further prevent solder penetration.
[0068] For details, please refer to Figure 6As shown, in one embodiment of this application, a first insulating layer 1081, a reflective layer 107, and a second insulating layer 1082 are sequentially disposed on a first epitaxial structure. The first insulating layer 1081 covers the surface of the first epitaxial structure and also covers the transparent conductive layer 104. The reflective layer 107 is disposed on the first insulating layer 1081, extends towards the groove 1010, and covers the sidewalls and part of the bottom wall of the groove 1010. The second insulating layer 1082 is disposed on the reflective layer 107, extends towards the groove 1010, and covers the reflective layer 107 within the groove 1010, as well as part of the bottom wall. Simultaneously, the reflective layer 107 and the second insulating layer 1082 fill the groove 1010. In this application, the light-emitting side of the light-emitting diode is the side where the substrate 100 is located. The reflective layer 107 achieves full coverage except for the light-emitting side, which can maximize the brightness of the light-emitting diode.
[0069] Please see Figure 6 As shown, in one embodiment of this application, the first insulating layer 1081 and the second insulating layer 1082 can be made of the same material. In some embodiments, the first insulating layer 1081 and the second insulating layer 1082 can be made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), or zinc oxide (ZnO). The thickness of the first insulating layer 1081 and the second insulating layer 1082 is, for example, 100nm to 600nm. Forming two relatively thick insulating layers can prevent damage to the interior of the light-emitting diode during soldering and prevent solder penetration. The reflective layer 107 includes periodic silicon oxide (SiO2) layers and titanium oxide (TiO2) layers. x The reflective layer 107 has a thickness of, for example, 50 nm to 200 nm, which can be set according to the requirements of the reflection band. The number of repeating cycles of the silicon oxide layer and the titanium oxide layer in the reflective layer 107 is, for example, 1 to 50, which can be set according to the process conditions.
[0070] Please see Figure 6As shown, in one embodiment of this application, the first electrode further includes a first welding electrode 1101, and the second electrode further includes a second welding electrode 1102. The first welding electrode 1101 is connected to the first connecting electrode 1091, and the second welding electrode 1102 is connected to the second connecting electrode 1092. The first connecting electrode 1091 and the second connecting electrode 1092 are encapsulated within a first insulating layer 1081. When forming the first welding electrode 1101 and the second welding electrode 1102, the second insulating layer 1082, the reflective layer 107, and the first insulating layer 1081 are first etched to form contact holes exposing the first connecting electrode 1091 and the second connecting electrode 1092. Conductive material is then deposited within the contact holes to form the first welding electrode 1101 and the second welding electrode 1102. In this application, the radial dimensions of the first welding electrode 1101 and the second welding electrode 1102 are larger than the radial dimensions of the first connecting electrode 1091 and the second connecting electrode 1092.
[0071] Please see Figure 6 and Figure 7 As shown, in one embodiment of this application, the first welding electrode 1101 and the second welding electrode 1102 include a contact layer 1103, an anti-permeability layer 1104, and a welding layer 1105. The contact layer 1103 is disposed on the first connecting electrode 1091 and the second connecting electrode 1092, and extends into the reflective layer 107. The anti-permeability layer 1104 is disposed on the contact layer 1103, extends from the reflective layer 107 into the second insulating layer 1082, and is higher than the second insulating layer 1082. The welding layer 1105 is disposed on the anti-permeability layer 1104.
[0072] Please see Figure 6 and Figure 7 As shown, in one embodiment of this application, the contact layer 1103 is made of a metallic material such as chromium (Cr), titanium (Ti), or nickel (Ni). Furthermore, in this application, the contact layer 1103 extends into the reflective layer 107 but does not extend beyond it.
[0073] Please see Figure 6 and Figure 7As shown, in one embodiment of this application, the anti-permeation layer 1104 includes a first stack and a second stack arranged in a periodic manner, wherein the first stack is a titanium metal layer and the second stack is an aluminum metal layer. The thickness of the first stack is, for example, 50nm~200nm, the thickness of the second stack is, for example, 100nm~300nm, and the number of repetitions of the first and second stacks is, for example, 3~8. In this application, the anti-permeation layer 1104 extends to a second insulating layer 1082, and the surface of the stacked anti-permeation layer 1104 is in contact with the surface of the second insulating layer 1082. The stacked anti-permeation layer 1104 can increase the reliability of the electrode while preventing solder from entering. A stable metal-solder paste bonding interface can be formed on the anti-permeation layer 1104 and the second insulating layer 1082.
[0074] Please see Figure 6 and Figure 7 As shown, in one embodiment of this application, and in some embodiments, the weld layer 1105 is made of nickel (Ni), tin (Sn), silver (Ag), copper (Cu), germanium (Ge), gold (Au), or an alloy of two or more of these. Furthermore, in this application, the weld layer 1105 is disposed on the anti-permeability layer 1104, and the thickness of the weld layer 1105 is, for example, 300 nm to 5000 nm.
[0075] Please see Figure 6 and Figure 7 As shown, in one embodiment of this application, when forming the light-emitting diode, after forming the first connecting electrode 1091 and the second connecting electrode 1092, a first insulating layer 1081 is sequentially deposited or sputtered on the second semiconductor layer 103 and the transparent conductive layer 104. A reflective layer 107 is deposited on the first insulating layer 1081 and in the groove 1041, and a second insulating layer 1082 is deposited or sputtered on the reflective layer 107. Then, the second insulating layer 1082, the reflective layer 107, and a portion of the first insulating layer 1081 are etched to form contact holes exposing the first connecting electrode 1091 and the second connecting electrode 1092. A contact layer 1103, an anti-permeability layer 1104, and a welding layer 1105 are sequentially deposited within the contact holes to form a first welding electrode 1101 and a second welding electrode 1102.
[0076] Please see Figures 8 to 11 As shown, in some embodiments, a special reflective layer can be provided to reflect light of a preset wavelength, and electrodes of a special shape can be provided to facilitate the welding of light-emitting diodes.
[0077] For details, please refer to Figure 8As shown, in one embodiment of this application, multiple reflective layers can be disposed on the insulating layer 108, and a blocking layer 1072 is disposed between adjacent reflective layers. Specifically, in one embodiment of this application, an insulating layer 108, a first reflective layer 1071, a blocking layer 1072, and a second reflective layer 1073 are sequentially disposed on the first epitaxial structure. The insulating layer 108 covers the surface of the first epitaxial structure and also covers the transparent conductive layer 104. The insulating layer 108 extends towards the groove 1010 and fills the groove 1010. The first reflective layer 1071 is disposed on the insulating layer 108, the blocking layer 1072 is disposed on the first reflective layer 1071, and the second reflective layer 1073 is disposed on the blocking layer 1072. In this application, the light-emitting side of the light-emitting diode is the side where the substrate 100 is located, and the multiple reflective layers are disposed on the side where the electrode of the light-emitting diode is located, which can increase the brightness of the light-emitting diode.
[0078] Please see Figure 8 As shown, in one embodiment of this application, the insulating layer 108 can be made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), or zinc oxide (ZnO). The thickness of the insulating layer 108 is, for example, 100nm to 600nm. Forming a thicker insulating layer can prevent damage to the interior of the light-emitting diode during soldering and prevent solder penetration.
[0079] Please see Figure 8 As shown, in one embodiment of this application, a first reflective layer 1071 is disposed on an insulating layer 108, and the material of the first reflective layer 1071 is a composite layer of titanium dioxide (TiO2), titanium pentoxide (Ti2O5), silicon dioxide (SiO2), silicon nitride (SiNx), aluminum oxide (Al2O3), and magnesium fluoride (MgF2). The thickness of the first reflective layer 1071 is 0.5nm to 5nm, and it can reflect red light with a wavelength of 400nm to 700nm.
[0080] Please see Figure 8 As shown, in one embodiment of this application, a barrier layer 1072 is disposed on the first reflective layer 1071, and the material of the barrier layer 1072 is one of silicon dioxide (SiO2), silicon nitride (SiNx), or aluminum oxide (Al2O3), or a composite layer of two or more of the above materials. The thickness of the barrier layer 1072 is 0.5µm to 1µm.
[0081] Please see Figure 8As shown, in one embodiment of this application, a second reflective layer 1073 is disposed on the blocking layer 1072, and the material of the second reflective layer 1073 is a composite layer selected from titanium dioxide (TiO2), titanium pentoxide (Ti2O5), silicon dioxide (SiO2), silicon nitride (SiNx), aluminum oxide (Al2O3), and magnesium fluoride (MgF2). The thickness of the second reflective layer 1073 is 0.5nm to 5nm, and it can reflect infrared light with wavelengths of 700nm to 1300nm.
[0082] In this application, the reflective layer can reflect specific wavelengths. In some embodiments, the reflective layer can reflect red and infrared light, for example, by placing multiple reflective layers on a red light-emitting diode. In other embodiments, the material and thickness of the reflective layer can be flexibly set according to the wavelength of the light to be reflected.
[0083] In some embodiments, multiple reflective layers may be provided, with a blocking layer between every two reflective layers. This application does not limit the specific number of reflective layers and can set them according to requirements. Specifically, the reflective layers can be distributed Bragg mirrors; by adjusting the thickness of each material layer in each reflective layer, reflection of light of different wavelengths can be achieved.
[0084] Please see Figure 8 As shown, in one embodiment of this application, in some embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 are encased within an insulating layer 108, and the first welding electrode 1101 extends from the insulating layer 108 to form a multilayer reflective layer. The second welding electrode 1102 also extends from the insulating layer 108 to form a multilayer reflective layer. In other embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 extend from the insulating layer 108 to the surface of the multilayer reflective layer. The first welding electrode 1101 and the second welding electrode 1102 are disposed on the surface of the reflective layer.
[0085] Please see Figure 8 As shown, in some embodiments, the first connecting electrode 1091 and the second connecting electrode 1092 are encased within the insulating layer 108, and the first welding electrode 1101 and the second welding electrode 1102 also extend from the insulating layer 108 to form multiple reflective layers. Furthermore, the first welding electrode 1101 and the second welding electrode 1102 are arranged in a rectangular shape.
[0086] Please see Figures 8 to 11 As shown, in some embodiments, such as Figure 8As shown, the first connecting electrode 1091 and the second connecting electrode 1092 extend from the insulating layer 108 to the surface of the multilayer reflective layer. The first welding electrode 1101 and the second welding electrode 1102 are disposed on the surface of the reflective layer. The radial dimensions of the first welding electrode 1101 and the second welding electrode 1102 on the side closer to the reflective layer are larger than the radial dimensions of the first welding electrode 1101 and the second welding electrode 1102 on the side farther from the reflective layer. The first welding electrode 1101 and the second welding electrode 1102 are rectangular on the side closer to the reflective layer and rectangular on the side farther from the reflective layer. In other embodiments, such as... Figure 9 and Figure 11 As shown, a first welding electrode 1101 and a second welding electrode 1102 are disposed on the surface of the reflective layer. The radial dimensions of the first welding electrode 1101 and the second welding electrode 1102 gradually increase from the side closer to the reflective layer to the side farther away from the reflective layer. The first welding electrode 1101 and the second welding electrode 1102 may be arranged in a trapezoidal shape, such as an isosceles trapezoid or a right trapezoid. In other embodiments, the first welding electrode 1101 and the second welding electrode 1102 may also be arranged in any other arbitrary polygonal shape, ensuring that the radial dimensions of the first welding electrode 1101 and the second welding electrode 1102 gradually increase from the side closer to the reflective layer to the side farther away from the reflective layer.
[0087] In this application, an insulating layer can be provided on the light-emitting diode according to the specific requirements of the light-emitting diode, and electrodes of different shapes or materials can be provided according to the welding requirements.
[0088] In some embodiments, to ensure that the insulating layer and reflective layer do not crack during deposition, the corner inside the light-emitting diode can be set to an obtuse angle.
[0089] Please see Figure 12 and Figure 13 As shown, in this application, to ensure the smoothness of the insulating layer and reflective layer on one side of the first epitaxial structure, the bottom of the step 1041 extends to contact the first semiconductor layer 101. The step 1041 is obtained by etching the second semiconductor layer 103 and the light-emitting layer 102 on one side of the first epitaxial structure. In this application, the corner of the step 1041 is set at a first angle A1, which is an obtuse angle, and the range of the first angle A1 is, for example, 115°. ~160 .
[0090] Please see Figure 12 and Figure 13 As shown, in some embodiments, the transparent conductive layer 104 is disposed at a second angle A2 with the surface of the first epitaxial structure. The second angle A2 is an obtuse angle and is greater than, for example, 135 degrees. In this application, the first angle A1 can be set to be equal to the second angle A2, which can further reduce the bending portion of the reflective layer 107 and the insulating layer 108 on the light-emitting diode.
[0091] Please see Figure 12 and Figure 14 As shown, in one embodiment of this application, a first connecting electrode 1091 is disposed on the second semiconductor layer 103, extends into the first semiconductor layer 101, and is connected to the first semiconductor layer 101. A second connecting electrode 1092 is disposed on the transparent conductive layer 104 and is connected to the transparent conductive layer 104. The angle between the first connecting electrode 1091 and the second connecting electrode 1092 and the first epitaxial structure or the transparent conductive layer 104 is a third angle A3, where the third angle A3 is an obtuse angle and its range is 125°. ~160 .
[0092] Please see Figure 12 and Figure 14 As shown, in some embodiments, the sidewall and bottom wall of the groove 010 are set at a fourth angle A4, where the fourth angle A4 is an obtuse angle and the range of the fourth angle A4 is 125 degrees. ~165 .
[0093] Please see Figure 12 and Figure 14 As shown in this application, the transitions at various points in the light-emitting diode are set to obtuse angles to avoid sharp angles causing cracks in the insulating and reflective layers during the formation of the insulating and reflective layers, which would allow welding material to penetrate into the light-emitting diode.
[0094] In some embodiments, the corners within the light-emitting diode can also be set to smooth obtuse angles.
[0095] In some embodiments, to increase the brightness of the light-emitting diode, a brightness enhancement substrate can be added to the light-emitting layer of the light-emitting diode.
[0096] For details, please refer to Figure 15As shown, in one embodiment of this application, a brightness enhancement substrate 106 is disposed on the second semiconductor layer 103, and the brightness enhancement substrate 106 is bonded to the surface of the transparent conductive layer 104, for example, through a bonding layer 105. A light-emitting layer is disposed on the side where the second semiconductor layer 103 is located, and a reflective layer 107, an insulating layer 108, a first electrode, and a second electrode are disposed on the side of the first semiconductor layer 101. The brightness enhancement substrate 106 can be a transparent substrate such as a sapphire substrate or a silicon substrate. The bonding layer 105 can be a transparent adhesive layer, specifically made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), aluminum nitride (ALN), or gallium nitride (GaN). In this embodiment, the thickness of the bonding layer 105 is 100nm~1000nm. For different materials, it can be fabricated by methods such as evaporation, sputtering, or plasma-enhanced chemical vapor deposition (PECVD), depending on the material used.
[0097] Please see Figure 15 As shown, in one embodiment of this application, the brightness enhancement substrate 106 is a single-sided polished substrate. The side of the brightness enhancement substrate 106 closest to the second semiconductor layer 103 is polished, while the side furthest from the second semiconductor layer 103 has a plurality of protrusions 1061. The polished surface near the second semiconductor layer 103 prevents light scattering, reflection, or refraction within the substrate, while the protrusions 1061 on the side furthest from the second semiconductor layer 103 increase the light-emitting area of the LED and improve its brightness. Furthermore, the protrusions 1061 can be cones, cylinders, cuboids, or other polygonal shapes.
[0098] Please see Figure 15As shown, in one embodiment of this application, the overall thickness of the brightness enhancement substrate 106 (including the protrusions 1061) is, for example, 50 μm to 500 μm, wherein the height of the protrusions 1061 is greater than, for example, 1 μm, specifically, 1 μm to 10 μm. The plurality of protrusions 1061 are arranged in an array, and adjacent protrusions 1061 are equally spaced. In some embodiments, the area of each protrusion 1061 may be greater than the area between adjacent protrusions 1061. In other embodiments, the area of each protrusion 1061 may be smaller than the area between adjacent protrusions 1061. In still other embodiments, the area of each protrusion 1061 may be equal to the area between adjacent protrusions 1061. When forming the brightness enhancement substrate 106, after bonding the brightness enhancement substrate 106 to the transparent conductive layer 104, the surface of the brightness enhancement substrate 106 away from the second semiconductor layer 103 is etched using wet etching or inductively coupled plasma (ICP) to form the plurality of protrusions 1061. Among them, the brightness enhancement substrate 106 is a transparent substrate.
[0099] Please see Figure 15 As shown, in one embodiment of this application, a first connecting electrode 1091 is disposed on the surface of the first semiconductor layer 101 and extends into the first semiconductor layer 101. A second connecting electrode 1092 is also disposed on the surface of the first semiconductor layer 101, passes through the first semiconductor layer 101 and the light-emitting layer 102, and extends into the second semiconductor layer 103. The second connecting electrode 1092 can penetrate the second semiconductor layer 103 to contact the transparent conductive layer 104, which enhances the contact between the second connecting electrode 1092 and the second semiconductor layer 103. A first welding electrode 1101 passes through the insulating layer 108 and the reflective layer 107 to connect to the first connecting electrode 1091, and a second welding electrode 1102 passes through the insulating layer 108 and the reflective layer 107 to connect to the second connecting electrode 1092. The radial dimensions of the first welding electrode 1101 and the second welding electrode 1102 are much larger than the dimensions of the first connecting electrode 1091 and the second connecting electrode 1092, facilitating welding. The first connecting electrode 1091 and the second connecting electrode 1092 are made of metal or alloy with good electrical conductivity, and the first welding electrode 1101 and the second welding electrode 1102 are made of metal with good electrical conductivity and low melting point.
[0100] Please see Figure 15As shown, in this application, when forming the light-emitting diode 10, a buffer layer 1001 can first be formed on the substrate 100, and a first semiconductor layer 101, a light-emitting layer 102, and a second semiconductor layer 103, i.e., the first epitaxial structure, can be sequentially formed on the buffer layer 1001. Then, a transparent conductive layer 104 is formed on the second semiconductor layer 103, and a brightness enhancement substrate 106 is bonded to the transparent conductive layer 104 through a bonding layer 105. Afterwards, the substrate 100 and the buffer layer 1001 are removed, and the first semiconductor layer 101 is thinned, retaining only the heavily doped N-type semiconductor layer. Figure 2 As shown, when using Figure 2 In the first epitaxial structure shown, after removing the substrate 100 and the buffer layer 1001, the undoped gallium nitride layer 1111 is removed. Then, the first epitaxial structure is etched to form vias contacting the first semiconductor layer 101 and the second semiconductor layer 103, and conductive material is deposited within the vias to form a first connection electrode 1091 and a second connection electrode 1092. The heights of the first connection electrode 1091 and the second connection electrode 1092 may extend beyond the surface of the first semiconductor layer 101. Next, a reflective layer 107 and an insulating layer 108 are formed on the first connection electrode 1091 and the second connection electrode 1092. Finally, the insulating layer 108 and the reflective layer 107 are etched to form a first welding electrode 1101 connected to the first connection electrode 1091, and a second welding electrode 1102 connected to the second connection electrode 1092. The first welding electrode 1101 and the second welding electrode 1102 have the same height. In the manufacturing process, the light-absorbing buffer layer 1001 and the substrate 100 are etched away, and a brightening substrate 106 is added to increase light emission, forming a high-brightness light-emitting diode 10.
[0101] Please see Figure 15 As shown, the light-emitting diode provided in this application removes the buffer layer 1001, which has many defects, and removes other thick gallium nitride layers. The semiconductor layer opposite the light-emitting layer is set as an N-type heavily doped gallium nitride layer, which greatly reduces the absorption of light by the buffer layer and the N-type semiconductor layer, increasing the light extraction efficiency of the light-emitting diode. On the other hand, the brightness enhancement substrate 106 further increases the light extraction efficiency of the light-emitting diode.
[0102] Please see Figure 15 As shown, when using a light-emitting diode (LED) display panel made of the LED 10 provided in this application, the spacing between adjacent LEDs 10 can be increased. For example, the spacing between adjacent LEDs 10 is 3 to 5 times the size of the LED 10. Specifically, in the direction of the length of the LED 10, the spacing between adjacent LEDs 10 is, for example, 3 to 5 times the length of the LED 10; and in the direction of the width of the LED 10, the spacing between adjacent LEDs 10 is, for example, 3 to 5 times the width of the LED 10.
[0103] When the LED display panel provided in this application is applied to an electronic device, the electronic device includes at least the LED display panel, a control device, and a power supply device. The LED display panel and the control device are electrically connected to the power supply device, and the LED display panel is electrically connected to the control device. The power supply device may be, for example, a power board that converts AC power to a specific voltage, or a battery. The power supply device supplies power to the driving device and the LED display panel. The control device may include a control board and control keys for adjusting the LED display panel. The control keys may be any human-interactive structure such as buttons electrically connected to the control board, a remote control, or a touch screen device on the screen. The control board can adjust the state of the LED display panel according to the instructions input by the control keys, including but not limited to the brightness, grayscale, color, and other input or output signals of the control panel.
[0104] In summary, the light-emitting diode provided in this application includes a first epitaxial structure composed of a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a transparent conductive layer disposed on the surface of the second semiconductor layer; a second connecting electrode disposed on the transparent conductive layer; and a first connecting electrode disposed on the second conductive layer and connected to the first conductive layer. It also includes a first insulating layer, a reflective layer, and a second insulating layer sequentially disposed on the first epitaxial structure; a first welding electrode passing through the first insulating layer, the reflective layer, and the second insulating layer and connected to the first connecting electrode; and a second welding electrode connected to the second connecting electrode. The first welding electrode and the second welding electrode each include a contact layer, a barrier layer, and a welding layer sequentially disposed.
[0105] The above description is merely a preferred embodiment of this application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to the technical solutions formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the inventive concept. For example, technical solutions formed by replacing the above-mentioned features with technical features with similar functions disclosed in this application (but not limited to) each other.
[0106] Apart from the technical features described in the specification, the other technical features are known to those skilled in the art. To highlight the innovative features of this invention, the other technical features will not be described in detail here.
Claims
1. A display panel, characterized in that, include: Drive backplane; Multiple light-emitting diodes (LEDs) are electrically connected to the driving backplane, and the LEDs include: Substrate; A first epitaxial structure is disposed on the substrate, and the first epitaxial structure includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked together. A first insulating layer is disposed on the first epitaxial structure; A reflective layer is disposed on the first insulating layer; as well as A second insulating layer is disposed on the reflective layer, and the second insulating layer covers the reflective layer; The first electrode is electrically connected to the first semiconductor layer; The second electrode is electrically connected to the second semiconductor layer, and the first electrode and the second electrode are provided with an anti-permeation layer, the anti-permeation layer extends from the reflective layer to the second insulating layer, and the anti-permeation layer is higher than the second insulating layer; The impermeable layer comprises a first layer and a second layer that are periodically stacked, wherein the first layer is a titanium metal layer and the second layer is an aluminum metal layer. In this embodiment, a second epitaxial structure is provided on the second surface of the substrate of a portion of the light-emitting diode to convert the light of the light-emitting diode into light of other colors, and the first surface and the second surface are two opposite surfaces of the substrate.
2. The display panel according to claim 1, characterized in that, The first electrode and the second electrode include a connecting electrode, and the connecting electrode extends from the first semiconductor layer or the second semiconductor layer into the first insulating layer.
3. The display panel according to claim 2, characterized in that, The first electrode and the second electrode include a welding electrode connected to the connecting electrode and extending from the first insulating layer to the surface of the second insulating layer.
4. The display panel according to claim 3, characterized in that, The welding electrode includes a contact layer disposed on the connecting electrode and extending from the first insulating layer into the reflective layer.
5. The display panel according to claim 4, characterized in that, The welding electrode includes the anti-permeability layer, which is disposed on the contact layer and extends out of the surface of the second insulating layer.
6. The display panel according to claim 5, characterized in that, The welding electrode includes a welding layer, which is disposed on the impermeable layer.
7. The display panel according to claim 1, characterized in that, The second semiconductor layer includes multiple scattering layers.