Substrate processing apparatus

Abstract

Embodiments of the present disclosure provide a substrate processing apparatus including: a processing chamber having a processing space provided in the processing chamber, and including a gas supply unit that introduces a gas into the processing space; a support portion provided in the processing space, and supporting a substrate; a heating unit provided to be spaced apart from an upper side of the support portion in the processing space, and including a lamp portion including a plurality of lamps that heat the substrate, and a window provided between the lamp portion and the support portion; and a discharge unit provided to reciprocate in one direction between the support portion and the heating unit, and suction and discharge a gas in the processing space.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0178675, filed on December 4, 2024, with the Korean Intellectual Property Office, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This disclosure relates to a substrate processing apparatus. Background Technology

[0004] To manufacture semiconductor devices, predetermined patterns must be formed on a substrate such as a wafer. While forming the predetermined patterns on the substrate, deposition, photolithography, etching, and other processes can be performed sequentially. In this process, a UV baking facility can be used to remove organic materials present between the fine patterns after the photolithography process and before the etching process.

[0005] UV baking process can be a method of heating a substrate while irradiating it with UV light. A UV lamp can be located on the top of the wafer, and the baking chamber can have an inlet through which reactive gases are supplied, an exhaust port through which reactive gases are discharged, and a quartz component separating the baking chamber from the lamp housing.

[0006] Here, since the positions of the inlet and outlet ports may be fixed, there may be a problem of difficulty in uniformly contacting the reactive gas across the entire substrate. That is, the portion of the substrate adjacent to the inlet can contact the reactive gas, and the reaction for removing the organic film (organic material) can occur well. On the other hand, other portions of the substrate away from the inlet (near the outlet port) may not only have difficulty contacting the reactive gas, but may also suffer from the problem that the reaction for removing the organic film may not occur uniformly, because reacted gases and foreign matter may mix with the reactive gas. Summary of the Invention

[0007] The purpose of this disclosure is to provide a substrate processing apparatus that not only facilitates contact between the substrate and the reactant gas, but also enables the reactant gas to make uniform contact with the entire surface of the substrate in order to effectively remove organic films (organic materials) present on the substrate.

[0008] To achieve this objective, a substrate processing apparatus according to an embodiment of the present disclosure includes: a processing chamber having a processing space disposed within the processing chamber, and including a gas supply unit for introducing gas into the processing space; a support portion disposed in the processing space and supporting a substrate; a heating unit disposed in the processing space and spaced apart from the upper side of the support portion, and including a lamp portion and a window, the lamp portion including a plurality of lamps for heating the substrate, the window being disposed between the lamp portion and the support portion; and a discharge unit disposed between the support portion and the heating unit, reciprocating in one direction, and drawing in and discharging gas from the processing space.

[0009] A substrate processing apparatus according to another embodiment of the present disclosure includes: a processing chamber having a processing space disposed within the processing chamber, and including a gas emission unit for discharging gas into the processing space; a support portion disposed in the processing space and supporting a substrate; a heating unit disposed in the processing space and spaced apart from the upper side of the support portion, and including a lamp portion and a window, the lamp portion including a plurality of lamps for heating the substrate, the window being disposed between the lamp portion and the support portion; and an injection unit disposed between the support portion and the heating unit, reciprocating in one direction, and injecting gas into the processing space.

[0010] According to another embodiment of the present disclosure, a substrate processing apparatus includes: a processing chamber having a processing space disposed within the processing chamber, and including a gas supply unit for introducing gas into the processing space; a support portion disposed in the processing space and supporting a substrate; a heating unit disposed in the processing space and spaced apart from the upper side of the support portion, and including a lamp portion and a window, the lamp portion including a plurality of lamps for heating the substrate, the window being disposed between the lamp portion and the support portion; a discharge unit disposed between the support portion and the heating unit, reciprocating in one direction to discharge gas from the processing space, and including a main body portion, a discharge line, and a driver, the main body portion having a length equal to or greater than the diameter of the substrate, and having a plurality of suction ports on the lower surface of the main body portion for drawing the gas, the discharge line being connected to the plurality of suction ports and discharging the drawn gas to the outside, the driver providing power to reciprocate the main body portion; and a controller controlling the heating unit to heat the substrate and controlling the... An emission unit is provided to discharge the gas in the processing space; wherein the processing space includes an upper space and a lower space separated from the upper space, the lamp portion is disposed in the upper space, the substrate is disposed in the lower space to perform a processing procedure for the substrate, the upper space and the lower space are at least partially separated by the window, the gas supply unit is located between the emission unit and the substrate, and at least two gas supply units are provided to be disposed on both sides of the substrate, the plurality of suction ports are disposed on the lower surface of the main body to form at least one row, and the controller: during heating of the substrate by the lamp portion, controls the emission unit to be disposed on one side of the substrate and wait, and when heating of the substrate is completed, controls the emission unit to reciprocate in one direction between both sides of the substrate, suctioning gas to form an upper flow in the lower space, and introducing new gas into the processing space through the gas supply units to generate convection between the substrate and the upper space to remove byproducts generated during heating of the substrate. Attached Figure Description

[0011] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which: Figure 1 This is a view of the substrate processing apparatus according to an embodiment of the present disclosure, viewed from above.

[0012] Figure 2 It is observed in direction AA. Figure 1 A view of the substrate processing apparatus.

[0013] Figure 3It is observed from direction BB. Figure 1 A view of the substrate processing apparatus.

[0014] Figure 4 This is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure.

[0015] Figure 5 The lower surface of the emission unit according to an embodiment of the present disclosure is shown schematically.

[0016] Figure 6 The lower surface of an emission unit according to another embodiment of the present disclosure is schematically shown.

[0017] Figure 7 The lower surface of an emission unit according to another embodiment of the present disclosure is schematically shown.

[0018] Figure 8 The lower surface of an emission unit according to another embodiment of the present disclosure is schematically shown.

[0019] Figure 9 It is shown in Figure 1 A cross-sectional view of the discharge unit in the substrate processing apparatus in its initial position.

[0020] Figure 10 It shows in Figure 1 The emission unit in the substrate processing apparatus is set at the emission position to emit gas.

[0021] Figure 11 A view of the emission unit according to an embodiment of the present disclosure, viewed from above, is shown.

[0022] Figure 12 A view of an emission unit according to another embodiment of this disclosure, viewed from above, is shown.

[0023] Figure 13 This is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present disclosure, showing the state before the injection unit is set in the initial position to inject gas.

[0024] Figure 14 It is shown in Figure 13 An example of an injection unit in a substrate processing apparatus being positioned at an injection location to inject gas. Detailed Implementation

[0025] In the following detailed description of preferred embodiments, reference will be made to the accompanying drawings, enabling those skilled in the art to readily implement this disclosure. However, in describing preferred embodiments of this disclosure in detail, detailed descriptions of related known functions or configurations may be omitted if it is determined that such detailed descriptions would unnecessarily obscure the essential points of this disclosure. Furthermore, the same reference numerals may be used throughout the drawings for components performing similar functions and actions. Additionally, in this specification, terms such as “on,” “upper part,” “upper side,” “upward,” “upward direction,” “upper surface,” “upper wall,” “below,” “lower part,” “lower side,” “downward,” “downward direction,” “lower surface,” and “lower wall” may be based on the drawings, and terms such as “in,” “inner,” “internal part,” “outer,” “outer,” and “external part” may be based on the periphery of the component of interest and may actually vary depending on the orientation of the setting element or component.

[0026] Furthermore, throughout the specification, being able to "comprise" or "include" a component can mean that another component can be further included rather than excluded, unless specifically the opposite is true.

[0027] Figure 1 This is a view of the substrate processing apparatus according to an embodiment of the present disclosure, viewed from above. Figure 2 It is observed in direction AA. Figure 1 A view of the substrate processing apparatus; and Figure 3 It is observed from direction BB. Figure 1 A view of the substrate processing apparatus.

[0028] refer to Figures 1 to 3 The substrate processing apparatus 1 may include a loading port 100, a transposition module 200, a buffer module 300, a coating / developing module 400, and a cleaning module 700. The loading port 100, transposition module 200, buffer module 300, coating / developing module 400, and interface module 600 may be arranged sequentially in a row in one direction. The cleaning module 700 may be disposed within the interface module 600. Optionally, the cleaning module 700 may be disposed at various locations, such as a location connected to an exposure device 800 at the rear end of the interface module 600, or on the side of the interface module 600. In the following, the direction in which the loading port 100, transposition module 200, buffer module 300, coating / developing module 400, and interface module 600 are arranged may be referred to as a first direction Y, and when viewed from above, a direction perpendicular to the first direction Y may be referred to as a second direction X, and a direction perpendicular to each of the first direction Y and the second direction X may be referred to as a third direction Z.

[0029] The substrate W can be moved while housed within the wafer carrier 20. The wafer carrier 20 can have a structure that can be sealed from the outside. For example, a front-opening unified pod (FOUP) with a door at the front can be used as the wafer carrier 20.

[0030] The loading port 100, the transposition module 200, the buffer module 300, the coating / developing module 400, the interface module 600, and the cleaning module 700 will be described in detail below.

[0031] The loading port 100 may include a mounting stage 120, on which a wafer carrier 20 containing a substrate W is disposed. Multiple mounting stages 120 may be configured, and these multiple mounting stages 120 may be arranged in a row in the second direction X. Although Figure 2 An example with four mounting platforms 120 is shown, but the number of mounting platforms 120 can be changed.

[0032] The transposition module 200 can transfer the substrate W between the buffer module 300 and the wafer carrier 20 disposed on the mounting stage 120 of the loading port 100. The transposition module 200 may include a frame 210, a transposition robot 220, and a guide rail 230.

[0033] The frame 210 can be configured as a rectangular parallelepiped shape with an empty internal portion, and can be positioned between the loading port 100 and the buffer module 300. The frame 210 of the indexing module 200 can be positioned at a lower height than the frame 310 of the buffer module 300.

[0034] The indexing robot 220 and guide rail 230 can be disposed within the frame 210. The indexing robot 220 can be configured such that the hand 221, which directly handles the substrate W, can move and rotate in a first direction Y, a second direction X, and a third direction Z. The indexing robot 220 may include a hand 221, an arm 222, a support member 223, and a base 224. The hand 221 can be fixedly mounted on the arm 222. The arm 222 can be configured as a telescopic and rotatable structure. The support member 223 can be configured such that its length direction is in the third direction Z. The arm 222 can be coupled to the support member 223 to be movable along the support member 223. The support member 223 can be fixedly coupled to the base 224. The guide rail 230 can be configured such that its length direction is in the second direction X. The base 224 can be coupled to the guide rail 230 to be linearly movable along the guide rail 230. In addition, although not shown, the frame 210 may also be provided with a door opener to open or close the door of the wafer carrier 20.

[0035] The buffer module 300 may include a frame 310, a first buffer 320, a second buffer 330, and a cooling chamber 340. The frame 310 may be configured as a rectangular parallelepiped with an empty internal portion and may be disposed between the indexing module 200 and the coating / developing module 400. The first buffer 320, the second buffer 330, and the cooling chamber 340 may be located within the frame 310. The cooling chamber 340, the second buffer 330, and the first buffer 320 may be arranged sequentially from bottom to top in the third direction Z. The first buffer 320 may be located at a height corresponding to the coating module 401 of the coating / developing module 400, and the second buffer 330 and the cooling chamber 340 may be located at a height corresponding to the developing module 402 of the coating / developing module 400.

[0036] The first buffer 320 and the second buffer 330 can temporarily store multiple substrates W, respectively. The first buffer 320 may have a housing 321 and multiple supports 322. In the first buffer 320, the supports 322 may be disposed within the housing 321 and may be spaced apart from each other in the third direction Z. The second buffer 330 may include a housing and multiple supports. In the second buffer 330, the supports may be disposed within the housing and may be spaced apart from each other in the third direction Z. A substrate W may be located in each of the supports 322 of the first buffer 320 and each of the supports of the second buffer 330. The housing may have an opening in the direction in which the transfer robot 220 is positioned, such that the transfer robot 220 transports the substrate W into or out of the supports within the housing.

[0037] The first buffer 320 may have a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 may have openings in both the direction in which the first buffer robot is positioned and in the direction in which the coating unit robot 421 located in the coating module 401 is positioned. The number of support members 322 provided in the first buffer 320 may be the same as or different from the number of support members provided in the second buffer 330. According to an example, the number of support members provided in the second buffer 330 may be greater than the number of support members 322 provided in the first buffer 320.

[0038] The cooling chamber 340 can cool the substrate W separately. The cooling chamber 340 may include a housing 341 and a cooling plate 342. The cooling plate 342 may have an upper surface on which the substrate W is disposed, and a cooling device 343 for cooling the substrate W. As the cooling device 343, various methods can be used, such as cooling with cooling water, cooling with thermoelectric components, etc. Moreover, the cooling chamber 340 may be provided with a lifting pin assembly for positioning the substrate W on the cooling plate 342. The housing 341 may have openings in the direction of setting the indexing robot 220 and in the direction of setting the developing unit robot, so that the indexing robot 220 and the developing unit robot disposed in the developing module 402 can transport the substrate W into or out of the cooling plate 342. In addition, a door configured to open and close the above-mentioned openings may be provided in the cooling chamber 340.

[0039] Although the buffer module 300 is described in an embodiment that includes a cooling chamber 340, this disclosure is not limited thereto, and the configuration of the cooling chamber 340 may be omitted if necessary.

[0040] The coating module 401 may include a process for coating a photosensitive solution, such as a photoresist, onto a substrate W, and a heat treatment process, such as heating and cooling the substrate W before and after the photoresist coating process. The coating module 401 may include a coating chamber 410, a heat treatment chamber portion 500, and a transfer chamber 420. The coating chamber 410, the transfer chamber 420, and the heat treatment chamber portion 500 may be arranged sequentially in a second direction X. For example, for the transfer chamber 420, the coating chamber 410 may be located on one side of the transfer chamber 420, and the heat treatment chamber portion 500 may be located on the other side of the transfer chamber 420.

[0041] The coating chamber 410 can be configured as multiple coating chambers 410, and the multiple coating chambers 410 can be respectively configured in the third direction Z. Furthermore, as... Figure 1 As shown, the coating chamber 410 can be configured as multiple or as one in the first direction Y.

[0042] The heat treatment chamber portion 500 may include a baking chamber 510 and a cooling chamber 520, and the baking chamber 510 and cooling chamber 520 may be arranged in multiples in the third direction Z. A transfer chamber 420 may be positioned parallel to the first buffer 320 of the buffer module 300 in the first direction Y. A coating unit robot 421 and a guide rail 422 may be located in the transfer chamber 420. The transfer chamber 420 may have a generally rectangular shape. The coating unit robot 421 may transfer the substrate W between the baking chamber 510, the cooling chamber 520, the coating chamber 410, and the first buffer 320 of the buffer module 300.

[0043] The guide rail 422 can be configured such that its length direction is parallel to the first direction Y. The guide rail 422 can guide the coating unit robot 421 to move linearly in the first direction Y. The coating unit robot 421 can have a hand 423, an arm 424, a support member 425, and a base 426. The hand 423 can be fixedly mounted on the arm 424. The arm 424 can be arranged in an extendable structure such that the hand 423 can move in the horizontal direction. The support member 425 can be configured such that its length direction is aligned in the third direction Z. The arm 424 can be coupled to the support member 425 to move linearly along the support member 425 in the third direction Z. The support member 425 can be fixedly coupled to the base 426, and the base 426 can be coupled to the guide rail 422 to be movable along the guide rail 422.

[0044] All coating chambers 410 may have the same structure, but the type of processing liquid used in each coating chamber 410 may differ from one another. As the processing liquid, a processing liquid used to form a photoresist film or an antireflective film may be used.

[0045] The coating chamber 410 can apply the processing liquid onto the substrate W. A processing unit including a processing container 411, a support portion 412, and a nozzle portion 413 can be provided in the coating chamber 410.

[0046] For example, a processing unit may be disposed in each coating chamber 410 in the first direction Y, but this disclosure is not limited thereto, and two or more processing units may be disposed in one coating chamber 410. All processing units may have the same structure. However, the type of processing liquid used in each processing unit may be different from each other. The processing container 411 of the coating chamber 410 may have an open top shape. A support portion 412 may be disposed in the processing container 411 and may support the substrate W. The support portion 412 may be rotatably disposed. A nozzle portion 413 may supply the processing liquid to the substrate W disposed on the support portion 412. The processing liquid may be applied to the substrate W by spin coating. In addition, the coating chamber 410 may optionally be provided with a nozzle (not shown) and a backwash nozzle (not shown), the nozzle supplying a cleaning liquid such as deionized water (DIW) to clean the surface of the substrate W to which the processing liquid has been applied, and the backwash nozzle cleaning the lower surface of the substrate W.

[0047] When the substrate W is placed by the coating unit robot 421, the baking chamber 510 can heat the substrate W. In the baking chamber 510, before applying the processing liquid, a pre-baking process can be performed to heat the substrate W at a predetermined temperature to remove organic matter or moisture from the surface of the substrate W, and a soft baking process can be performed after applying the processing liquid to the substrate W. Furthermore, after performing the heating process in the baking chamber 510, a cooling process can be performed to cool the substrate W, etc.

[0048] The heating plate 511 and the heating device 511a can be installed in the baking chamber 510.

[0049] The heating device 511a can heat the substrate W disposed in the baking chamber 510. In this case, the substrate W can be heated while the baking chamber 510 is sealed, and the heating device 511a can heat the entire area of ​​the substrate W to a uniform temperature. As the heating device 511a, for example, a heating method using heating wires disposed inside or outside the heating plate 511 can be used.

[0050] In addition, heating methods can be used using devices such as heaters disposed inside or outside the baking chamber 510. For example, the baking chamber 510 may be equipped with a lamp portion 910 that irradiates the upper surface of the substrate W with light such as ultraviolet light to heat the substrate W, which will be described in detail below.

[0051] This heat treatment process can blow organic materials onto a liquid film formed by applying a treatment solution to a substrate W, thereby stabilizing the liquid film.

[0052] Furthermore, the baking chamber 510 may also include a cooling plate (not shown). The cooling plate may include at least one cooling device for cooling the substrate W. The cooling plate can cool the substrate W by receiving cooling water from a cooling unit, which will be described later. Therefore, the substrate W can be prevented from being heated to excessively high temperatures due to the heat treatment process. The substrate W, on which the heat treatment process has been completed, can be transported to the cooling chamber 520.

[0053] In the cooling chamber 520, a cooling process for the substrate W can be performed before the application of the processing liquid. The cooling chamber 520 may include a cooling plate. The cooling plate may be a cooling device for cooling the substrate W, and various methods may be used, such as cooling with cooling water, cooling with thermoelectric components, etc.

[0054] Interface module 600 connects coating / developing module 400 to external exposure equipment 800. Interface module 600 may include interface frame 610, first interface buffer 620, second interface buffer 630, and transfer robot 640. After the coating / developing module 400 completes its operation, transfer robot 640 can return the substrate returned to the first interface buffer 620 and second interface buffer 630 to exposure equipment 800. First interface buffer 620 may include housing 621 and support member 622. Transfer robot 640 and coating unit robot 421 can load substrate W into or unload substrate W from support member 622.

[0055] Figure 4This is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure.

[0056] Reference Figure 4 According to an embodiment of the present disclosure (hereinafter referred to as Example 1), the substrate processing apparatus 1 may include a processing chamber C, a support portion 412, a heating unit 900, and a discharge unit 1000.

[0057] The processing chamber C may have a processing space C10 therein. A substrate W may be supplied to the processing space C10 for performing processing processes on the substrate W. More specifically, a heat treatment process may be performed on the substrate W in the processing space C10. In this case, as described above, the processing chamber C may be a baking chamber 510.

[0058] The processing chamber C may include a gas supply unit C20. The gas supply unit C20 may be connected to an external gas supply device (not shown) to supply gas to the processing space C10. In this case, the supplied gas may include oxygen (O2) as a processing gas for decomposing organic materials present on the surface of the substrate W. After the gas is supplied to the processing space C10, the oxygen included in the gas may encounter light emitted from the lamp L to generate ozone (O3). The organic film (organic material) present on the substrate W can be decomposed by the ozone (O3) generated as described above.

[0059] Gas supply units C20 can be disposed at various locations within the processing chamber C. In one embodiment, gas supply units C20 can be disposed within the sidewall portion of the processing chamber C. For example, two gas supply units C20 can be disposed. In this case, the two gas supply units C20 can be disposed on the two sidewalls of the processing chamber C, respectively. In this case, the two gas supply units C20 can be disposed on both sides of the substrate W, wherein the substrate W is disposed on the support portion 412 in the processing space C10 and inserted between the two gas supply units C20. Therefore, the gas supply units C20 can be disposed facing each other in the width direction X (i.e., the second direction X) of the processing chamber C. Although this disclosure is not limited to this embodiment, for ease of description, the embodiment described above, in which two gas supply units C20 are disposed on both sides of the substrate W, will be primarily described.

[0060] The substrate W supplied to the processing space C10 can be placed on and supported on the support portion 412. In this case, the support portion 412 can be provided in the processing space C10.

[0061] A plate may be disposed at the upper end of the support portion 412. This plate may be part of the support substrate W and may be a heating plate as described above. Hereinafter, this plate will be referred to as heating plate 511. Heating plate 511 may include a heating device 511a for heating the substrate W, which may be the same as or similar to the device described above, and therefore redundant descriptions will be omitted.

[0062] The heating plate 511 may include a plurality of support pins (not shown). The plurality of support pins may be formed to protrude upward (+Z) from the upper surface of the heating plate 511. After the substrate W is placed on the plurality of support pins, the substrate W can be supported.

[0063] Multiple support pins can be configured to be raised or lowered from the heating plate 511. When a new substrate W is supplied to the support portion 412 or a heat-treated substrate W is discharged, the multiple support pins can be raised. In this state, the substrate W can be transferred onto the support pins by the coating unit robot 421, or the heat-treated substrate W can be discharged from the support pins. Afterward, the support pins can be lowered again, and the transfer of the substrate W can be completed.

[0064] The support portion 412 may include a drive motor 412a and a drive shaft 412b. The lower end portion of the drive shaft 412b may be connected to the drive motor 412a. Furthermore, a heating plate 511 may be connected to the upper end portion of the drive shaft 412b. The drive shaft 412b can be raised or lowered by receiving power from the drive motor 412a. Therefore, the heating plate 511 connected to the upper end portion of the drive shaft 412b can be raised or lowered in the lifting direction A.

[0065] The heating unit 900 can perform heat treatment on the substrate W disposed in the processing space C10. In this case, the heating unit 900 may include a lamp portion 910 and a window 920. The lamp portion 910 may be configured to heat the substrate W and may include multiple lamps L. For example, the lamps L may be a light source such as a UV lamp and may illuminate the substrate W with light. In this case, the light may be ultraviolet light with a wavelength of 10 nm to 300 nm.

[0066] The heating unit 900 may be disposed in the upper portion of the processing space C10. More specifically, the processing space C10 may include an upper space C11 and a lower space C12. The upper space C11 and the lower space C12 may be separate spaces from each other, and a window 920 may be disposed between the upper space C11 and the lower space C12.

[0067] Based on the substrate W (or the upper surface of the substrate W) supported on the support portion 412, the lower space C12 can be divided into a first lower space C12a and a second lower space C12b. The first lower space C12a can be the upper region of the substrate W, and the second lower space C12b can be the lower region of the substrate W. In this case, the first lower space C12a and the second lower space C12b can be separated by a heating plate 511 and a partition wall portion C01 extending from the edge portion of the heating plate 511 to the inner sidewall of the lower space C12. Moreover, a gas supply unit C20 can be disposed above the partition wall portion C01 and the second lower space C12b. Therefore, while performing heat treatment on the substrate W, gases such as processing gases can be supplied only to the first lower space C12a and can be discharged to the outside of the processing chamber C without being introduced into the second lower space C12b.

[0068] The lamp portion 910 can be disposed in the upper space C11. Multiple lamps L can be spaced apart from each other at predetermined intervals in the width direction X within the upper space C11. The multiple lamps L can be arranged to extend side-by-side. For example, the extension direction Y of the lamps L (i.e., the first direction Y) can be perpendicular to the aforementioned width direction X.

[0069] Window 920 may be located below lamp portion 910. Window 920 may have the same length as lamp portion 910, or it may have a length extending beyond lamp portion 910. For example, window 920 may be formed of quartz material.

[0070] The window 920 can be fixed inside the processing space C10 while supported by a support member 921, which is positioned on the outer side of the window 920 in the circumferential direction. For example, the support member 921 can be positioned to surround and support the periphery of the window 920 and can be fixedly connected to the inner surface of the processing space C10. The upper space C11 and the lower space C12 can be separated from each other by the window 920 and the support member 921 surrounding the window 920.

[0071] The substrate W can be disposed in the lower space C12. More specifically, the support portion 412 can be disposed below the window 920. For example, the support portion 412 can be configured to share a virtual center line CL with the window 920. The support portion 412 configured in this way can support the substrate W to be heat-treated.

[0072] In this configuration, light (ultraviolet light) emitted from multiple lamps L can pass through the transparent window 920 and move into the first lower space C12a. In the first lower space C12a, oxygen included in the gas (processing gas) can encounter the light to generate ozone. Through the ozone generated as described above, the organic film (organic material) present on the surface of the substrate W can be decomposed and removed from the substrate W. Furthermore, some of the light that has moved into the first lower space C12a can irradiate the surface of the substrate W to directly decompose some of the organic film (organic material).

[0073] During the decomposition of the organic membrane (organic material) as described above, various types of byproducts can be generated in the first lower space C12a. These byproducts may include, for example, CO2 and H2O. These byproducts can be discharged to the outside of the processing space C10 via the emission unit 1000, as will be described later.

[0074] The discharge unit 1000 can discharge the gas in the processing space C10 to the outside. The discharge unit 1000 can be disposed between the support portion 412 and the heating unit 900.

[0075] More specifically, the discharge unit 1000 can be disposed in the lower space C12. For example, the discharge unit 1000 can be disposed at the upper end of the lower space C12 or directly below the window 920. In this case, based on the aforementioned width direction X, the discharge unit 1000 can reciprocate between the two sides of the window 920 in the transport direction B. In this case, the transport direction B can be a direction parallel to the width direction X of the processing chamber C. For this purpose, the discharge unit 1000 can include a driver (not shown). Although not shown in the figures, the driver can be configured as a linear motor or the like to provide power to move the discharge unit 1000.

[0076] More specifically, the emission unit 1000 may be located below the window 920 and may be moved by reciprocating between one side of the window 920 (or one side of the support 921) and the other side of the window 920 (or the other side of the support 921). As a result, while the substrate W is being heat-treated, by waiting in a state where the window 920 is positioned on one side (the standby position described later) (the first state T1 described later), light emitted from the lamp L can be allowed to irradiate the substrate W without obstructing light.

[0077] The discharge unit 1000 may include a main body 1010 and a discharge line 1020. In this case, the main body 1010 may be provided with a suction port H. The discharge line 1020 may be connected to the suction port H. More specifically, one end of the discharge line 1020 may be connected to the suction port H via the main body 1010. Furthermore, the other end of the discharge line 1020 may extend to the outside of the processing chamber C. In this case, gas in the processing space C10 may be drawn in through the suction port H and then discharged to the outside of the processing chamber C via the discharge line 1020. In this case, a pump (not shown) for drawing in gas, etc., may be connected to the discharge line 1020 to provide suction power for drawing in and discharging gas.

[0078] The suction port H can be disposed on the lower surface of the main body portion 1010. The discharge unit 1000 can be disposed above the support portion 412, so that the lower surface of the main body portion 1010 can face the upper surface of the substrate W supported by the support portion 412. At least one suction port H can be provided. For example, multiple suction ports H can be provided, and multiple suction ports H will be described below based on several individual embodiments, but this disclosure is not limited thereto.

[0079] The main body portion 1010 may have a length equal to or longer than the diameter of the substrate W, which may be the target for heat treatment. Therefore, when the main body portion 1010 passes through the upper portion of the substrate W in the transport direction B, the upper surface of the substrate W can be completely covered by the main body portion 1010.

[0080] Furthermore, the substrate processing apparatus 1 may also include a controller (not shown). The controller may be electrically connected to the heating unit 900 to control the heating unit 900 to perform heat treatment on the substrate W. In addition, the controller may be electrically connected to the discharge unit 1000 to discharge the gas in the processing space C10 to the outside.

[0081] The controller can be implemented, for example, as a circuit board mounted on the control computer of the substrate processing apparatus 1, a computer chip mounted on the circuit board, or software built into the computer chip or the control computer. In this case, the specific method of controlling the heating unit 900 and the exhaust unit 1000 will be described later.

[0082] Figure 5 The lower surface of the emission unit according to an embodiment of the present disclosure is shown schematically.

[0083] Reference Figure 5In the discharge unit 1000 according to an embodiment of the present disclosure (hereinafter, Example 1), a plurality of suction ports H may be arranged in a row along the length direction Y of the main body portion 1010. In this case, as described above, the length direction Y may be a direction perpendicular to the conveying direction B of the discharge unit 1000 and parallel to the extending direction Y of the lamp L. For example, the plurality of suction ports H may be arranged in a row along a virtual center line C2 that passes through the center of the main body portion 1010 and extends parallel to the extending direction Y.

[0084] Furthermore, in the discharge unit 1000 according to Example 1, multiple suction ports H may have the same or similar diameters.

[0085] Figure 6 The lower surface of an emission unit according to another embodiment of the present disclosure is schematically shown.

[0086] Reference Figure 6 In another embodiment of the present disclosure (hereinafter referred to as Example 2), the discharge unit 1000A may have a plurality of suction ports H arranged in a row along the length direction Y of the main body portion 1010. For example, the plurality of suction ports H may be arranged in a row along a virtual center line C2 that passes through the center of the main body portion 1010 and extends parallel to the extension direction Y.

[0087] In the emission unit 1000A according to Example 2, the diameters of the plurality of suction ports H can be varied in the extending direction Y of the main body portion 1010. More specifically, the suction port H1, which is located in the virtual center line C1, can have the largest diameter. The diameter of the suction ports H can gradually decrease in the extending direction Y from the suction port H1 to the outside of the main body portion 1010. Therefore, the diameter of the suction ports H2, located at both ends of the main body portion 1010, can be the smallest. As described above, the suction ports H, H1, and H2 can be connected to the emission line 1020.

[0088] Because the diameters of the suction ports H, H1, and H2 are configured to gradually increase towards the center of the main body portion 1010, the flow rate per unit area of ​​gas drawn in and discharged through the suction port H1 in the central portion of the main body portion 1010 can be maximized. When viewed from above, this central portion can be the part of the main body portion 1010 that overlaps with the substrate W to the greatest extent. This can be advantageous for smooth gas discharge.

[0089] Figure 7 The lower surface of an emission unit according to another embodiment of the present disclosure is schematically shown.

[0090] Reference Figure 7According to another embodiment of this disclosure (hereinafter referred to as Example 3), the discharge unit 1000B can be configured such that a plurality of suction ports Ha and Hb form multiple rows in the length direction Y of the main body portion 1010.

[0091] For example, suction ports Ha and Hb can be arranged on the lower surface of the main body 1010 to form two rows. In this case, suction ports Ha in the first row and suction ports Hb in the second row can be arranged symmetrically, and a virtual center line C2 is interposed between suction ports Ha in the first row and suction ports Hb in the second row. In this case, multiple suction ports Ha and Hb can have the same or similar diameters.

[0092] In the emission unit 1000B according to Example 3, although not shown in the accompanying drawings, the suction ports can be configured to form three or more rows on the lower surface of the main body 1010. As another example, the suction ports can be configured with different diameters, forming two or more rows simultaneously, or the suction ports can be configured to form multiple rows, but can be offset from each other. As described above, when multiple suction ports H are provided on the lower surface of the main body 1010 to form at least two or more rows, a larger amount of gas can be suctioned and discharged within the same time period.

[0093] Figure 8 The lower surface of an emission unit according to another embodiment of the present disclosure is schematically shown.

[0094] Reference Figure 8 According to another embodiment of this disclosure (hereinafter referred to as Example 4), the discharge unit 1000C may include slit-shaped suction ports Hs1, Hs2, and Hs3. The suction ports Hs1, Hs2, and Hs3 may have an elongated slit shape extending in the extending direction Y of the main body portion 1010. In this case, the suction ports Hs1, Hs2, and Hs3 may have a length similar to that of the main body portion 1010.

[0095] At least one of suction ports Hs1, Hs2, and Hs3 can be provided. For example, three suction ports Hs1, Hs2, and Hs3 can be provided, and the three suction ports Hs1, Hs2, and Hs3 can be arranged side by side to extend in the extending direction Y of the main body portion 1010. More specifically, suction port Hs1 can be configured to at least partially overlap with the aforementioned virtual center line C2. Furthermore, the remaining two suction ports Hs2 and Hs3 can be symmetrically arranged in the width direction X, with suction port Hs1 interposed between suction ports Hs2 and Hs3. In this case, suction ports Hs1, Hs2, and Hs3 can have the same or similar width (length along the X-axis in the figures).

[0096] The suction ports Hs1, Hs2, and Hs3 can be open. In another embodiment, the suction ports Hs1, Hs2, and Hs3 can each be provided with an open / close portion (not shown). The suction ports Hs1, Hs2, and Hs3 can be selectively opened and closed by the open / close portions. For example, the suction ports Hs1, Hs2, and Hs3 can be selectively opened by the open / close portions only when the internal gas of the processing space C10 is being suctioned and discharged. When the suction and discharge of the gas is not necessary, the suction ports Hs1, Hs2, and Hs3 can be closed by the open / close portions.

[0097] In the discharge unit 1000C according to Example 4, although not shown in the accompanying drawings, the aforementioned suction ports Hs1, Hs2, and Hs3 can have different widths. For example, the suction port Hs1 in the central portion can have the largest width, while the other two suction ports Hs2 and Hs3 can have relatively smaller widths. As another example, one or two slit-shaped suction ports can be provided.

[0098] Figure 9 It is shown in Figure 1 A cross-sectional view of the discharge unit in the substrate processing apparatus in its initial position. Figure 10 It shows in Figure 1 The emission unit in the substrate processing apparatus is positioned at the emission location to emit gas. Furthermore, Figure 11 A view of the emission unit according to an embodiment of the present disclosure, viewed from above, is shown.

[0099] Reference Figures 9 to 11 When the substrate processing apparatus 1 according to Example 1 can perform heat treatment on the substrate W, the method for forming an airflow for discharging gas and foreign matter included in the processing space C10 can be as follows.

[0100] First, during heat treatment on the substrate W, light emitted from the lamp L in the lamp section 910 can pass through the window 920 and illuminate the substrate W. Similarly, the gas corresponding to the processing gas can be supplied to the processing space C10 via the gas supply unit C20. In this case, the gas can be supplied to the first lower space C12a.

[0101] Ozone can be generated by allowing light to encounter oxygen in the gas contained in the first lower space C12a. The organic film (organic material) present on the surface (upper surface) of the substrate W can be decomposed and removed by the ozone generated as described above. Byproducts can be generated during the decomposition of the organic material, and these byproducts may include CO2, H2O, etc.

[0102] While heat treatment is underway on the substrate W, the emission unit 1000 can be positioned in a "standby position" to wait. The standby position can be a position where the emission unit 1000 does not interfere with the transmission of light emitted from the lamp L to the substrate W. The standby position can be a lower point positioned around the portion of the support 921 surrounding the window 920. Figure 9 As shown, the standby position can be a point directly below the left side (based on the attached drawing) of the window 920 in the support member 921.

[0103] As described above, the state in which the emission unit 1000 is positioned in a standby position and undergoes heat treatment on the substrate W can be defined as "first state T1".

[0104] When the heat treatment of the substrate W is completed in the first state T1, the emission unit 1000 can draw in and emit gas in the processing space C10. Therefore, contaminants included in the gas can be emitted and removed to the outside of the processing space C10. Contaminants can cause defects in the substrate W to reduce yield and may include foreign matter (such as byproducts (e.g., CO2, H2O, etc.) generated by the decomposition of the organic film (organic material) on the substrate W as described above), and / or dust present in the processing space C10.

[0105] More specifically, the discharge unit 1000 can draw gas from the lower space C12 through a plurality of suction ports H formed on the lower surface of the main body portion 1010. In this case, since the discharge unit 1000 draws gas from the upper side of the substrate W, the gas on the lower side of the discharge unit 1000 can rise toward the discharge unit 1000. Therefore, an upstream flow can be formed in the lower space C12 (or the region between the discharge unit 1000 and the substrate W).

[0106] Simultaneously, new gas can be supplied to the lower space C12 via gas supply units C20 disposed on both sides of the substrate W or the support portion 412. In this case, by heat-treating the substrate W, the gas in the periphery of the substrate W can also rise, while the newly introduced gas can have a relatively low temperature. Due to the temperature difference, the heated gas can rise, and in this process, the gas can be more actively raised by the suction operation of the discharge unit 1000. Furthermore, the newly introduced low-temperature gas can be introduced into the periphery of the substrate W, and as the heated gas rises, the periphery of the substrate W may be an empty space.

[0107] Gas rising toward the discharge unit 1000 can be drawn in through the suction port H and then moved along the discharge line 1020 to be discharged to the outside of the processing chamber C.

[0108] When drawing and discharging gas as described above, the discharge unit 1000 can reciprocate and move horizontally from the upper side of the substrate W in the transport direction B. When the discharge unit 1000 moves, the lamp L can remain in the off state. When the lamp L is in the on state, the discharge unit 1000 can be located to the left of the window 920 (see...). Figure 9 (or the right side of window 920 (not shown)). Thus, it is not necessary to prevent light emitted by lamp L from illuminating the substrate, and when lamp L can be turned off, emission unit 1000 can move rapidly in the left or right direction to remove organic material from substrate W.

[0109] More specifically, the discharge unit 1000 can reciprocate from one side of the window 920 to the other in the conveying direction B within the lower space C12. Therefore, the direction of gas ascent can be changed to the left or right relative to the central portion CW of the processing chamber C.

[0110] For example, when the discharge unit 1000 draws in gas while moving along a first conveying direction B1, which can be a direction from the central portion CW facing right, the gas in the lower space C12 can also rise in an inclined direction to gradually deflect to the right. A portion of the gas that has risen in this way can be drawn in and discharged by the discharge unit 1000. Other portions of the gas that have risen may not be drawn into the discharge unit 1000 and may continue to rise. The upper flow that is not drawn in and discharged in this way can be lowered again after impacting the support member 921 or the window 920.

[0111] Therefore, convection may occur between the substrate W and the emission unit 1000 in the right region of the lower space C12. Similarly, when the emission unit 1000 draws gas in the second transport direction B2 (which may be from the central portion CW toward the left), convection may occur in the left region of the lower space C12 due to the rising and falling of the gas.

[0112] As described above, the state in which the emission unit 1000 reciprocates from the upper part of the substrate W and draws in and emits gas in the processing space C10 can be defined as "second state T2".

[0113] In the second state T2, since the gas supply unit C20 can be disposed on both sides of the processing chamber C, the gas that can be used for processing can be supplied to both sides of the substrate W. Therefore, airflow can be formed from both sides of the substrate W in two directions toward the central portion CW of the substrate W. Therefore, compared with the case where the gas supply unit C20 is disposed only on one side of the substrate W, the gas can be supplied uniformly to the entire substrate W and can contact the surface of the substrate W.

[0114] Furthermore, due to the convection generated by the reciprocating motion of the emission unit 1000, a gas flow that circulates vertically can be generated in the first lower space C12a. In the first lower space C12a, in addition to the gas flow in both directions toward the substrate W as described above, the area of ​​contact between the gas (processing gas) and the surface of the substrate W can be increased. As a result, excellent and uniform organic decomposition and removal effects can be obtained across the entire surface of the substrate W due to a specific gas such as ozone.

[0115] Although an embodiment in which one emission unit 1000 is provided has been described, the substrate processing apparatus 1 may include multiple emission units 1000.

[0116] Figure 12 A view of an emission unit according to another embodiment of this disclosure, viewed from above, is shown.

[0117] Reference Figure 12 According to another embodiment of the present disclosure, the substrate processing apparatus 1 may include two emission units 1000. In this case, for ease of description, either of the two emission units 1000 will be defined as a first emission unit 1000AA, and the other of the two emission units 1000 will be defined as a second emission unit 1000BB. The first emission unit 1000AA may include a body portion 1010AA and an emission line 1020AA. The second emission unit 1000BB may include a body portion 1010BB and an emission line 1020BB.

[0118] In this configuration, the first emission unit 1000AA can be located in the right-hand region of the lower space C12, and the second emission unit 1000BB can be located in the left-hand region of the lower space C12. In this configuration, based on the central portion CW of the substrate W, the right-hand region can refer to the space to the right of the lower space C12, and based on the central portion CW of the substrate W, the left-hand region can refer to the space to the left of the lower space C12.

[0119] The first discharge unit 1000AA can reciprocate in the right-side region of the lower space C12 in the conveying direction B3. The first discharge unit 1000AA can draw gas into the right-side region of the lower space C12 to form an upper flow and discharge the gas. At the same time, the first discharge unit 1000AA can reciprocate in the right-side region and draw gas, thereby generating convection in the right-side region during the gas discharge process.

[0120] Furthermore, the second emission unit 1000BB can reciprocate in the conveying direction B3 in the left region of the lower space C12. The second emission unit 1000BB can draw gas into the left region of the lower space C12 to form an upper flow and then discharge the gas. Simultaneously, the second emission unit 1000BB can draw gas while reciprocating in the left region, thereby generating convection in the left region during the gas emission process.

[0121] As described above, the lower space C12 can be virtually divided into at least two zones, and separate exhaust units 1000AA and 1000BB can be installed in each of the virtual partitioned zones to draw in and exhaust gases. In this case, gases can be discharged from the processing space C10 more quickly through multiple exhaust units 1000AA and 1000BB.

[0122] Furthermore, convection can be generated in each of the virtual segmented regions of the lower space C12, allowing convection to occur more actively in the processing space C10. Therefore, by increasing the contact area between the processing gas used to decompose organic materials (e.g., ozone) and the substrate W, the effectiveness of decomposing organic materials can be further improved.

[0123] Furthermore, when the heat treatment process (organic decomposition process) for any of the substrates W is completed, the substrate W corresponding to the heat treatment process can be discharged from the processing chamber C, and a new substrate W can be supplied to the processing chamber C. In this case, even while replacing the substrate W, the discharge unit 1000 can continuously reciprocate in the transport direction B, and can draw in and discharge gases from the processing space C10. Therefore, while the substrate W can be replaced, contaminants present in the processing space C10 can be continuously discharged and removed, thereby keeping the interior of the processing chamber C clean even when multiple substrates W are continuously heat-treated. This can result in improved substrate W yield.

[0124] On the other hand, the accompanying drawings only show the case where the substrate processing apparatus 1 includes two emission units 1000AA and 1000BB, but this disclosure is not limited thereto.

[0125] Figure 13 This is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present disclosure, showing the state before the injection unit is positioned in the initial position for gas injection. Furthermore, Figure 14 It is shown in Figure 13 An example of an injection unit in a substrate processing apparatus being positioned at an injection location to inject gas.

[0126] refer to Figure 13 and Figure 14A substrate processing apparatus 1A according to another embodiment of the present disclosure (hereinafter referred to as Example 5) may include a processing chamber C, a support portion 412, a heating unit 900, and an injection unit 1100. Since the detailed features of the processing chamber C, the support portion 412, and the heating unit 900 may be the same as or similar to the detailed features of the substrate processing apparatus 1 according to Example 1 above, redundant descriptions will be omitted, and the differences will be mainly described.

[0127] Unlike Example 1, the substrate processing apparatus 1A according to Example 5 may include a gas emission unit C30 in the processing chamber C. The gas emission unit C30 may be a channel through which gas in the processing space C10 is discharged to the outside. The gas emission unit C30 may be disposed at various locations in the processing chamber C.

[0128] As an example, a gas emission unit C30 can be disposed on a side wall portion of the processing chamber C. As an example, two gas emission units C30 can be disposed. In this case, the two gas emission units C30 can be disposed one after the other on two side wall portions of the processing chamber C. In this case, the two gas emission units C30 can be disposed on both sides of the substrate W, wherein the substrate W disposed on the support portion 412 in the processing space C10 is inserted between the two gas emission units C30. Therefore, the gas emission units C30 can be disposed facing each other in the width direction X of the processing chamber C.

[0129] While this disclosure is not limited to specific embodiments, for ease of description, the following will primarily describe an embodiment in which two gas emission units C30 are provided as described above and the two gas emission units C30 are disposed on both sides of the substrate W.

[0130] The injection unit 1100 can inject gas into the processing space C10. The injection unit 1100 can be disposed between the support portion 412 and the heating unit 900.

[0131] More specifically, the injection unit 1100 can be disposed in the lower space C12. For example, the injection unit 1100 can be disposed at the upper end of the lower space C12 or directly below the window 920. In this case, the injection unit 1100 can reciprocate between the two sides of the window 920 in the transport directions B4 and B5 based on the width direction X of the processing chamber C. For this purpose, the injection unit 1100 may include a driver (not shown). Although not shown in the figures, the driver may be constructed of a linear motor or the like to provide power to move the injection unit 1100.

[0132] More specifically, the injection unit 1100 can reciprocate and move between one side of the window 920 (or one side of the support 921) and the other side of the window 920 (or the other side of the support 921) while the heat treatment on the substrate W is being performed, so as not to prevent the light emitted from the lamp L from illuminating the substrate W (i.e., the first state T1).

[0133] The injection unit 1100 may include a main body portion 1110 and a supply line 1120. In this case, the main body portion 1110 may have an injection port (not shown) on its lower surface. The supply line 1120 may be connected to the injection port. More specifically, one end portion of the supply line 1120 may be connected to the main body portion 1110 by penetrating it, and may be connected to the injection port. Furthermore, the other end portion of the supply line 1120 may extend to the outside of the processing chamber C. In this case, a pump (not shown) for supplying gas may be connected to the other end portion of the supply line 1120. Gas supplied through the supply line 1120 may be injected into the processing space C10 through the injection port of the main body portion 1110.

[0134] An injection port may be provided on the lower surface of the main body portion 1110. An injection unit 1100 may be provided on the upper side of the support portion 412, and thus the lower surface of the main body portion 1110 may face the upper surface of the substrate W supported by the support portion 412. At least one injection port may be provided. For example, multiple injection ports may be provided, and multiple injection ports will be described below based on several individual embodiments, but this disclosure is not limited thereto.

[0135] The injection ports can be configured in various forms. In this case, the injection ports can be configured on the lower surface of the body portion 1110 in the same or similar manner as the suction port H described above. For example, multiple injection ports can be configured on the lower surface of the body portion 1110 to form one or at least two rows in the extending direction Y. As another example, multiple injection ports can be configured in a manner in which the diameter gradually increases toward the center of the body portion 1110, or as another example, at least one injection port with a slit shape can be configured.

[0136] Furthermore, the substrate processing apparatus 1A may also include a controller (not shown). The controller may be electrically connected to the heating unit 900 to control the heating unit 900 to perform heat treatment on the substrate W. In addition, the controller may be electrically connected to the injection unit 1100 to inject (supply) gas into the processing space C10.

[0137] The controller can be implemented, for example, as a circuit board mounted on the control computer of the substrate processing apparatus 1A, a computer chip mounted on the circuit board, or software built into the computer chip or the control computer. In this case, the specific method of controlling the heating unit 900 and the injection unit 1100 will be described later.

[0138] Although not shown in the accompanying drawings, as another embodiment, the substrate processing apparatus may include the discharge unit of Example 1 and the injection unit of Example 5. In this case, the discharge unit and the injection unit may be disposed above the substrate W in the first lower space C12a. In this case, the discharge unit and the injection unit reciprocate in the transport direction B, and the gas in the first lower space C12a may be drawn in by the discharge unit and discharged to the outside. Simultaneously, gas may be supplied to the first lower space C12a through the injection unit. For example, gas (reaction gas) may be supplied to and removed from the first lower space C12a.

[0139] Refer again Figure 13 and Figure 14 When the substrate W is heated according to the substrate processing apparatus 1A of Example 5, the method for forming an airflow to discharge the gas in the processing space C10 and foreign matter included in the gas to the outside can be as follows.

[0140] First, while performing heat treatment on the substrate W, the injection unit 1100 can wait in a standby position. The standby position can be a position where the injection unit 1100 does not interfere with the transmission of light emitted from the lamp L to the substrate W, and for example, as... Figure 13 As shown, this could be a point directly below the left side (based on the figures) of the window 920 in the support 921, as described in Example 1. In this way, the state in which the injection unit 1100 is positioned in a standby position and heat treatment is performed on the substrate W can be defined as "first state T1".

[0141] When the heat treatment of the substrate W is completed in the first state T1, the gas emission unit C30 can draw in and discharge the gas in the processing space C10. Therefore, contaminants included in the gas can be discharged and removed to the outside of the processing space C10. Contaminants can cause defects in the substrate W to reduce yield and can include foreign matter, such as byproducts generated by the decomposition of organic films on the substrate W as described above and / or dust present in the processing space C10.

[0142] More specifically, the injection unit 1100 can inject (supply) gas into the lower space C12 through a plurality of injection ports formed on the lower surface of the main body portion 1110. In this case, since the injection unit 1100 injects gas from the upper side of the substrate W, the injected gas can be lowered toward the substrate W. As a result, a downstream flow can be formed in the lower space C12 (or in the region between the injection unit 1100 and the substrate W).

[0143] Simultaneously, the internal gas of the lower space C12 can be discharged to the outside through the gas discharge units C30 located on both sides of the substrate W or the support portion 412 in the processing chamber C. In this case, by heat-treating the substrate W, the gas around the substrate W can be in a state where the temperature can be raised, while the newly introduced gas can be in a state where the temperature is relatively low. In this case, a portion of the already heated gas can be discharged. The remaining portion of the heated gas can bypass the gas discharge unit C30 and can rise again in the lower space C12 after impacting the inner surface of the processing chamber C.

[0144] The gas that has risen again can be reduced along with the new gas injected and supplied from the injection unit 1100, and discharged to the outside of the processing chamber C through the gas discharge unit C30. By partially cooling the temperature of the gas that has risen during the process, the gas can be reduced more smoothly.

[0145] When the gas is injected and discharged as described above, the injection unit 1100 can reciprocate and move horizontally from the upper side of the substrate W in the transport directions B4 and B5.

[0146] More specifically, the injection unit 1100 can reciprocate from one side of the window 920 to the other in the lower space C12 along the transport directions B4 and B5. Therefore, the direction of gas descent can be changed to a left or right direction relative to the virtual centerline CL of the processing chamber C.

[0147] For example, when injection unit 1100 injects gas while moving to the right along the first transport direction B4 from the virtual center line CL, the gas in lower space C12 can also descend in an inclined direction to gradually deflect to the right. A portion of the gas descending in this manner can be discharged through gas discharge unit C30. Other portions of the descending gas may bypass gas discharge unit C30 and collide with the inner surface of processing chamber C. The descending gas flow that is not discharged in this manner can rise together with the gas that has risen due to heat treatment around the substrate W. Therefore, convection can occur between the substrate W and injection unit 1100 in the right-hand region of lower space C12. Similarly, when injection unit 1100 injects gas in the second transport direction B5, convection can occur in the left-hand region of lower space C12 due to the rising and falling of the gas; this second transport direction B5 can be a direction from the virtual center line CL toward the left.

[0148] As described above, the state in which the injection unit 1100 reciprocates from the upper portion of the substrate W and injects (supplyes) gas into the processing space C10 to form a lower flow can be defined as "second state T2".

[0149] In the second state T2, as the injection unit 1100 reciprocates along the transport directions B4 and B5 from the top of the substrate W and supplies gas (which may be a processing gas), the processing gas (e.g., ozone) can uniformly contact the surface (upper surface) of the substrate W. Furthermore, as described above, due to the convection generated by the reciprocating motion of the injection unit 1100, the gas (processing gas) circulates up and down in the first lower space C12a, allowing the processing gas to uniformly contact the entire surface of the substrate W and improving the effect of decomposing organic materials.

[0150] Furthermore, even in the substrate processing apparatus 1A according to Example 5, the injection unit 1100 can continuously inject gas while simultaneously replacing the substrate W with a new substrate W. At the same time, the gas containing contaminants can be discharged through the gas emission unit C30, allowing the interior of the processing chamber C to be kept clean.

[0151] In the substrate processing apparatus 1, 1A according to the embodiments of the present disclosure as described above, the processing gas (gas) for removing organic materials can be configured to uniformly contact the entire surface of the substrate W, thereby improving the effect of removing organic materials from the substrate W.

[0152] Furthermore, when multiple substrates W are continuously heat-treated, the processing space C10 can be kept at a high level of cleanliness to improve the yield of substrates W by continuously venting gases including contaminants from the processing chamber C while replacing substrates W.

[0153] Although the substrate processing apparatus of this disclosure has been described as an embodiment in which optical processes are applied, this disclosure is not limited thereto, and it will be apparent to those skilled in the art that the substrate can be applied to various processes, such as etching processes, testing processes, packaging processes, etc.

[0154] In the substrate processing apparatus according to embodiments of the present disclosure, the processing gas (gas) for removing organic materials can be configured to uniformly contact the entire surface of the substrate, thereby improving the effect of removing organic materials from the substrate.

[0155] In addition, when heating multiple substrates continuously, it is useful in terms of maintaining a high level of cleanliness in the processing space by venting contaminant-containing gases from the processing chamber during substrate replacement, and rapidly reducing the temperature in the chamber heated by UV irradiation to improve substrate yield in a steady state.

[0156] While exemplary embodiments have been described and illustrated above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of this disclosure as defined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: A processing chamber having a processing space disposed within the processing chamber, and including a gas supply unit for introducing gas into the processing space; A support portion is disposed in the processing space and supports the substrate; A heating unit is configured to be spaced apart from the upper side of the support portion in the processing space, and includes a lamp portion and a window, the lamp portion including a plurality of lamps for heating the substrate, and the window being disposed between the lamp portion and the support portion; as well as The discharge unit is configured to reciprocate in one direction between the support portion and the heating unit, and to draw in and discharge gas in the processing space.

2. The substrate processing apparatus according to claim 1, wherein, The processing space includes an upper space and a lower space separated from the upper space. The lamp portion is disposed in the upper space, and the substrate is disposed in the lower space to perform processing techniques on the substrate. The window is positioned between the upper space and the lower space.

3. The substrate processing apparatus according to claim 2, wherein, The gas supply unit is located between the emission unit and the substrate, and two units are configured to be disposed on one side and the other side of the substrate, respectively.

4. The substrate processing apparatus according to claim 1, wherein, The emission unit includes a main body and an emission line. The main body is provided with a suction port on its lower surface for drawing in the gas. The emission line is connected to the suction port and discharges the drawn gas to the outside.

5. The substrate processing apparatus according to claim 4, wherein, The suction port is configured as multiple suction ports, and The plurality of suction ports are arranged along the length of the main body.

6. The substrate processing apparatus according to claim 5, wherein, The plurality of suction ports are configured to form at least one row on the lower surface of the main body portion.

7. The substrate processing apparatus according to claim 5, wherein, The diameter of the plurality of suction ports gradually increases toward the center of the main body.

8. The substrate processing apparatus according to claim 4, wherein, The suction port has an elongated slit shape extending along the length of the main body portion.

9. The substrate processing apparatus according to claim 4, wherein, The main body portion has a length equal to or greater than the diameter of the substrate.

10. The substrate processing apparatus according to claim 3, wherein, The emission unit draws gas from the treatment space to create an upper flow in the lower space, and When the emission unit draws in the gas, new gas is introduced into the processing space through the gas supply unit, and convection is generated between the substrate and the upper space.

11. The substrate processing apparatus according to claim 10, wherein, The emission unit reciprocates between one side and the other side of the substrate in one direction, and draws in and discharges the gas to remove foreign matter generated when the substrate is heated.

12. The substrate processing apparatus according to claim 1, wherein, The emission unit is configured as multiple emission units, and At least some of the plurality of emission units reciprocate individually, and draw in and discharge the gas.

13. A substrate processing apparatus, comprising: A processing chamber having a processing space disposed within the processing chamber, and including a gas emission unit for emitting gas into the processing space; A support portion is disposed in the processing space and supports the substrate; A heating unit is configured to be spaced apart from the upper side of the support portion in the processing space, and includes a lamp portion and a window, the lamp portion including a plurality of lamps for heating the substrate, and the window being disposed between the lamp portion and the support portion; as well as The injection unit is configured to reciprocate in one direction between the support portion and the heating unit, and to inject gas into the processing space.

14. The substrate processing apparatus according to claim 13, wherein, The processing space includes an upper space and a lower space separated from the upper space. The lamp portion is disposed in the upper space, and the substrate is disposed in the lower space to perform processing techniques on the substrate. The window is positioned between the upper space and the lower space.

15. The substrate processing apparatus according to claim 14, wherein, The gas emission unit is located between the injection unit and the substrate, and two units are configured to be disposed on one side and the other side of the substrate, respectively.

16. The substrate processing apparatus according to claim 13, wherein, The injection unit includes a main body and a supply line. The main body is provided with an injection port on its lower surface for injecting the gas. The supply line is connected to the injection port and supplies the gas to the injection port.

17. The substrate processing apparatus according to claim 16, wherein, The plurality of injection units are configured to form at least one row on the lower surface of the main body portion.

18. The substrate processing apparatus according to claim 15, wherein, The injection unit injects gas into the processing space to form a lower flow in the lower space, and When the injection unit injects the gas, the gas in the processing space is discharged through the gas emission unit, and convection is generated between the substrate and the upper space.

19. The substrate processing apparatus according to claim 18, wherein, The injection unit reciprocates between one side and the other side of the substrate in one direction and injects the gas into the processing space to discharge the gas to the gas discharge unit to remove byproducts generated when the substrate is heated.

20. A substrate processing apparatus, comprising: A processing chamber having a processing space disposed within the processing chamber, and including a gas supply unit for introducing gas into the processing space; A support portion is disposed in the processing space and supports the substrate; A heating unit is configured to be spaced apart from the upper side of the support portion in the processing space, and includes a lamp portion and a window, the lamp portion including a plurality of lamps for heating the substrate, and the window being disposed between the lamp portion and the support portion; The discharge unit is configured to reciprocate in one direction between the support portion and the heating unit to discharge gas in the processing space, and includes a main body, a discharge line, and a driver. The main body has a length equal to or greater than the diameter of the substrate and is provided with a plurality of suction ports on the lower surface of the main body for drawing the gas. The discharge line is connected to the plurality of suction ports and discharges the drawn gas to the outside. The driver provides power to reciprocate the main body. as well as A controller controls the heating unit to heat the substrate and controls the emission unit to discharge the gas in the processing space; The processing space includes an upper space and a lower space separated from the upper space. The lamp portion is disposed in the upper space, and the substrate is disposed in the lower space to perform processing on the substrate. The upper space and the lower space are at least partially separated by the window. The gas supply unit is located between the emission unit and the substrate, and at least two gas supply units are provided to be disposed on both sides of the substrate. The plurality of suction ports are disposed on the lower surface of the main body to form at least one row, and The controller: During the heating of the substrate by the lamp portion, the emission unit is controlled to be positioned on one side of the substrate and waits, and When the heating of the substrate is complete, the emission unit is controlled to reciprocate between the two sides of the substrate in one direction, drawing gas to form an upper flow in the lower space, and introducing new gas into the processing space through the gas supply unit to generate convection between the substrate and the upper space to remove byproducts generated during the heating of the substrate.

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