Substrate processing apparatus and substrate processing method

Abstract

The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a chamber, a susceptor on which a plurality of substrates including three or more substrates are mounted, and a gas injector that injects a gas toward the plurality of substrates, wherein the gas injector includes a first injector that injects a source gas, a second injector that injects a reaction gas, and a third injector that injects a surface treatment gas, and the gas injector includes a plasma electrode that forms a plasma in one or two or more of the first injector, the second injector, and the third injector.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus that performs a processing process, such as a deposition process, on a substrate. Background Technology

[0002] Generally, thin film layers, thin film circuit patterns, or optical patterns should be formed on the surface of a substrate used to manufacture solar cells, semiconductor devices, flat panel display devices, etc. For this purpose, semiconductor manufacturing processes are performed. Examples of semiconductor manufacturing processes include thin film deposition processes that deposit a thin film containing a specific material onto a substrate, exposure processes that selectively expose a portion of a thin film using a photosensitive material, and etching processes that remove the thin film corresponding to the selectively exposed portion to form a pattern.

[0003] The process of forming or removing a thin film on a substrate is performed by supplying a gas for forming a specific material on the substrate, or a gas or corresponding material for selectively removing the material. In particular, the process of forming a thin film can be performed by supplying a reactive gas and a source gas for forming a specific material, and in this case, the source gas and the reactive gas can be supplied to the substrate simultaneously or sequentially with a time difference.

[0004] As semiconductor device manufacturing processes become increasingly sophisticated, various methods are being employed to form uniform thin films or patterns within intricate patterns on substrate surfaces. One such method is atomic layer deposition (ALD). ALD is a process that involves supplying source and reactant gases at different times to induce a reaction solely on the substrate surface, thereby forming a thin film on the substrate through the reaction between the source and reactant gases. First, source gases are supplied to the substrate to allow them to be adsorbed onto the substrate surface, and then other source gases are removed using a purge gas. Subsequently, reactant gases are supplied to the substrate to allow them to react with the source gases adsorbed on the substrate surface, and then other reactant gases are removed using a purge gas. During the reactant gas supply step, a single-layer or atomic-layer thin film is formed on the substrate surface through the reaction between the source and reactant gases. This process can be repeated to the desired thickness, thus allowing the formation of a thin film of a specific thickness on the substrate surface.

[0005] However, because the reaction between the source gas and the reactant gas only occurs on the substrate surface, atomic layer deposition has the disadvantage of a lower thin film deposition rate than chemical vapor deposition (CVD).

[0006] Furthermore, the process of repeatedly supplying source gas to the same processing space, purging the supplied source gas, supplying reactant gas, and purging reactant gas in a short period of time has the disadvantage of being time-consuming. In the case of rapid repetition of the process, there is a disadvantage that the supplied source gas or reactant gas is not completely discharged (purged) from the processing space to the outside of the cavity. As a result, atomic layer films cannot be formed, but chemical deposition (CVD) films are formed when the two gases are combined.

[0007] In processes that rapidly supply source and reactant gases, and in atomic layer deposition (ALD) processes involving source or reactant gases, pure ALD layers and structures in which the two gases do not mix during the process are required.

[0008] In addition, a separate processing space is required for spraying deposition suppressant gas or deposition inhibitor, and a structure in which the source gas and reactant gas are not mixed.

[0009] In addition, a separate processing space is required to perform additional plasma processing before or after the atomic layer deposition process, and a structure in which the source gas and reactant gas are not mixed. Summary of the Invention

[0010] Technical issues

[0011] This disclosure aims to solve the above-mentioned problems and to provide a processing chamber in which the source gas and the reactant gas are not mixed in space.

[0012] Furthermore, this disclosure provides an apparatus for providing a processing method when a thin film is formed by an atomic layer deposition (ALD) process.

[0013] In addition, this disclosure provides an apparatus that uses a pure atomic layer deposition (ALD) process to form a film (pure ALD layer) on a substrate to densify a specific thin film or improve film quality.

[0014] Furthermore, this disclosure provides an apparatus in which a purge gas is supplied in a purge gas space separating a source gas space and a reaction gas space to remove impurities from the generated thin film and to remove residual reaction gas in the substrate that rapidly moves from the reaction gas space to the source gas space.

[0015] Technical solution

[0016] According to this disclosure, a substrate processing apparatus for achieving the aforementioned technical means may include: a cavity, a base for mounting a plurality of substrates including three or more substrates, and a gas ejector for injecting gas toward the plurality of substrates, wherein the gas ejector may include: a first ejector for injecting source gas, a second ejector for injecting reactive gas, and a third ejector for injecting surface treatment gas, and the gas ejector may include a plasma electrode in one or more of the first ejector, the second ejector, and the third ejector to form plasma.

[0017] In addition, the substrate processing apparatus may include a controller for performing control such that when one of a plurality of substrates passes through one of the first ejector, the second ejector, and the third ejector, the one substrate stops moving or slows down or speeds up its movement for a certain period of time.

[0018] In addition, the substrate processing apparatus may include: a first purging unit disposed in the central portion of the cavity in a radial direction and spraying purging gas into the region between the first ejector and the second ejector; a second purging unit disposed in the central portion of the cavity in a radial direction and spraying purging gas into the region between the second ejector and the third ejector; and a third purging unit disposed in the central portion of the cavity in a radial direction and spraying purging gas into the region between the third ejector and the first ejector.

[0019] In another embodiment, the substrate processing apparatus includes a base in which a plurality of substrates, including three or more substrates, are disposed in a cavity, a gas ejector for injecting gas toward the base, and a control unit for rotating the base relative to the gas ejector. The gas ejector may include a first ejector for injecting source gas, a second ejector for injecting reactive gas, and a third ejector for injecting surface treatment gas. The base is rotatable such that each substrate of the base passes sequentially through the first ejector, the second ejector, and the third ejector.

[0020] Furthermore, in the substrate processing equipment, the base can be rotated so that each substrate on the base is sequentially exposed to the source gas, the reaction gas, and the surface treatment gas.

[0021] In another embodiment, the substrate processing method of the substrate processing apparatus includes a base in which a plurality of substrates, including three or more substrates, are disposed in a cavity, a gas ejector for injecting gas toward the base, and a controller for rotating the base relative to the gas ejector. The gas ejector includes a first ejector for injecting source gas, a second ejector for injecting reactive gas, and a third ejector for injecting surface treatment gas. The substrate processing method may include rotating the base such that each substrate of the base passes sequentially through the first ejector, the third ejector, and the second ejector.

[0022] Furthermore, in the substrate processing method, the base can be rotated so that each substrate of the base is sequentially exposed to the source gas, the surface treatment gas, and the reaction gas.

[0023] Furthermore, in the substrate processing method, the controller can perform control such that when one of the multiple substrates passes through one of the first ejector, the second ejector, and the third ejector, the one substrate stops moving or slows down or speeds up its movement for a certain period of time.

[0024] In another embodiment, the substrate processing apparatus may include: a cavity, a base for mounting a plurality of substrates including at least four or more substrates, and a gas ejector for spraying gas toward the plurality of substrates, wherein the gas ejector may include: a first ejector for spraying source gas, a second ejector for spraying reactive gas, a third ejector for spraying surface treatment gas, and a fourth ejector for spraying deposition prevention gas, and the gas ejector may include a plasma electrode in one or more of the first ejector, the second ejector, the third ejector, and the fourth ejector to form plasma.

[0025] In addition, the substrate processing apparatus may include a controller to perform control such that when one of the multiple substrates passes through one of the first ejector, second ejector, third ejector, and fourth ejector, the one substrate stops moving or slows down or speeds up its movement for a certain period of time.

[0026] In addition, the substrate processing apparatus may include: a first purging unit disposed in the central portion of the cavity in a radial direction and spraying purging gas into the region between the first ejector and the fourth ejector; a second purging unit disposed in the central portion of the cavity in a radial direction and spraying purging gas into the region between the fourth ejector and the second ejector; a third purging unit disposed in the central portion of the cavity in a radial direction and spraying purging gas into the region between the second ejector and the third ejector; and a fourth purging unit disposed in the central portion of the cavity in a radial direction and spraying purging gas into the region between the third ejector and the first ejector.

[0027] In another embodiment, the substrate processing method of the substrate processing apparatus includes a base for mounting a plurality of substrates comprising at least four or more substrates, a gas ejector for injecting gas toward the base, and a controller for rotating the base relative to the gas ejector. The gas ejector includes a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas. The substrate processing method may include rotating the base such that each substrate of the base passes sequentially through the first ejector, the fourth ejector, the second ejector, and the third ejector.

[0028] Furthermore, in the substrate processing method, the base can be rotated so that each substrate of the base is sequentially exposed to the source gas, the deposition prevention gas, the reaction gas, and the surface treatment gas.

[0029] Furthermore, in the substrate processing method, the controller can perform control such that when one of the multiple substrates passes through one of the first ejector, second ejector, third ejector, and fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

[0030] Furthermore, in the substrate processing method, when the base is rotated, each substrate of the base is sequentially exposed to the source gas, the deposition prevention gas, the reaction gas, and the surface treatment gas. The base can be rotated so that each substrate is exposed to the surface treatment gas after being exposed to the source gas and the deposition prevention gas.

[0031] In another embodiment, the substrate processing method of the substrate processing apparatus includes a base for mounting a plurality of substrates comprising at least four or more substrates, a gas ejector for injecting gas toward the base, and a controller for rotating the base relative to the gas ejector. The gas ejector includes a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas. The substrate processing method may include rotating the base such that each substrate of the base passes sequentially through the first ejector, the third ejector, the fourth ejector, and the second ejector.

[0032] Furthermore, in the substrate processing method, the base can be rotated so that each substrate of the base is sequentially exposed to the source gas, surface treatment gas, deposition prevention gas, and reaction gas.

[0033] Furthermore, in the substrate processing method, the controller can perform control such that when one of the multiple substrates passes through one of the first ejector, second ejector, third ejector, and fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

[0034] Furthermore, in the substrate processing method, when the base is rotated, each substrate of the base is sequentially exposed to the source gas, the surface treatment gas, the deposition prevention gas, and the reaction gas. The base can be rotated so that each substrate is exposed to the surface treatment gas after being exposed to the reaction gas.

[0035] In another embodiment, the substrate processing method of the substrate processing apparatus includes a base for mounting a plurality of substrates comprising at least four or more substrates, a gas ejector for injecting gas toward the base, and a base controller for rotating the base relative to the gas ejector. The gas ejector includes a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas. The substrate processing method may include rotating the base such that each substrate of the base passes sequentially through the fourth ejector, the first ejector, the second ejector, and the third ejector.

[0036] Furthermore, in the substrate processing method, the base can be rotated so that each substrate of the base is sequentially exposed to deposition prevention gas, source gas, reaction gas and surface treatment gas.

[0037] Furthermore, in the substrate processing method, the controller can perform control such that when one of the multiple substrates passes through one of the first ejector, second ejector, third ejector, and fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

[0038] Furthermore, in the substrate processing method, when the base is rotated, each substrate of the base is sequentially exposed to a deposition prevention gas, a source gas, a reaction gas, and a surface treatment gas. The base can be rotated so that each substrate is exposed to the surface treatment gas after being exposed to the source gas and the reaction gas.

[0039] In another embodiment, the substrate processing method of the substrate processing apparatus includes a base for mounting a plurality of substrates comprising at least four or more substrates, a gas ejector for injecting gas toward the base, and a base controller for rotating the base relative to the gas ejector. The gas ejector includes a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas. The substrate processing method may include rotating the base such that each substrate of the base passes sequentially through the fourth ejector, the first ejector, the third ejector, and the second ejector.

[0040] Furthermore, in the substrate processing method, the base can be rotated so that each substrate of the base is sequentially exposed to deposition prevention gas, source gas, surface treatment gas and reaction gas.

[0041] Furthermore, in the substrate processing method, the controller can perform control such that when one of the multiple substrates passes through one of the first ejector, second ejector, third ejector, and fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

[0042] Furthermore, in the substrate processing method, when the base is rotated, each substrate of the base is sequentially exposed to a deposition prevention gas, a source gas, a surface treatment gas, and a reaction gas. The base can be rotated so that each substrate is exposed to the surface treatment gas after being exposed to the reaction gas.

[0043] Furthermore, in the substrate processing method, multiple substrates can be three substrates or six substrates.

[0044] Furthermore, in the substrate processing method, the surface treatment gas can be a plasma gas.

[0045] Furthermore, in the substrate processing method, the surface treatment gas can be a gas containing hydrogen or oxygen.

[0046] Beneficial effects

[0047] According to the aforementioned technical means, the substrate processing apparatus of this disclosure can completely separate and divide the processing space of the cavity into a source gas injection space, a reaction gas injection space, a deposition suppression gas injection space, and a surface treatment gas injection space by a blow-off gas ejector, thereby separating and forming a pure atomic layer (Pure ALD) thin film, a surface treatment gas space, and a deposition suppression gas space.

[0048] Atomic layer deposition (ALD) can be achieved by completely separating the space where surface treatment gases are separated from the space where deposition suppression gases are injected, and the processing space for injecting active gases and reactive gases can be completely separated, thereby improving the ALD filling quality.

[0049] Furthermore, the substrate's movement speed can be slowed down, accelerated, or stopped in the source gas jet space, reaction gas jet space, deposition inhibition gas jet space, and surface treatment gas jet space, thereby improving the ALD film quality. Attached Figure Description

[0050] Figure 1 This is a plan view schematically illustrating the shape of a plurality of substrates and the space they separate in a substrate processing apparatus according to an embodiment of the present disclosure.

[0051] Figure 2 This is a drawing illustrating the shape of a plurality of gas injectors and the space separated by them in the upper part of a cavity in a substrate processing apparatus according to an embodiment of the present disclosure.

[0052] Figure 3 This is a plan view schematically illustrating the shape of a plurality of substrates and the space separated therein in a substrate processing apparatus according to another embodiment of the present disclosure.

[0053] Figure 4This is a drawing illustrating the shape of a plurality of gas injectors and the space separated by them in the upper part of a cavity in a substrate processing apparatus according to another embodiment of the present disclosure.

[0054] Figures 5A to 5D This is a drawing illustrating the positional changes of a gas ejector in a substrate processing apparatus according to another embodiment of the present disclosure. Detailed Implementation

[0055] The terms used in this instruction manual should be understood as follows.

[0056] The preferred embodiments according to this disclosure will now be described in detail with reference to the accompanying drawings.

[0057] As used in this specification, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well. The terms “first” and “second” are used to distinguish one component from another, and these components should not be construed as limited to the foregoing terms.

[0058] It will be further understood that when the terms “comprising,” “including,” “having,” “containing,” and / or “encompassing” are used in this specification, they indicate the presence of the stated feature, integer, step, operation, component, and / or part, but do not exclude the presence or addition of one or more other features, integers, steps, operations, components, parts, and / or combinations thereof.

[0059] The term “at least one” should be understood as any and all combinations that include one or more of the related enumerated items. For example, “at least one of the first, second and third items” means a combination of all items drawn from two or more of the first, second and third items, and the first, second or third item.

[0060] The term "on" should be interpreted to include situations where one component is formed on top of another component, and also to situations where a third component is placed between these components.

[0061] Figure 1 and Figure 2 The accompanying drawings may schematically illustrate a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 This can be a plan view showing the lower base when the upper surface of the cavity is cut off and viewed from above. Figure 2 It can be a plan view when the upper surface of the cavity is cut and the upper cover is viewed from above.

[0062] Reference Figure 1 and Figure 2In a substrate processing apparatus according to one embodiment of the present disclosure, a plurality of processing spaces may be located in a cavity 200. The plurality of processing spaces in the cavity 200 may include a first processing space 210, a second processing space 220, and a third processing space 230, and a base 201 may be located in the lower portion of each of the first processing space 210, the second processing space 220, and the third processing space 230.

[0063] Three or more substrates can be mounted on the base 201, and the first substrate S1, the second substrate S3 and the third substrate S2 can be located in the first processing space 210, the second processing space 220 and the third processing space 230 respectively, but not limited thereto, and another substrate can be placed in each space when rotated.

[0064] At this time, when the first substrate S1, the second substrate S3 and the third substrate S2 are loaded into the cavity 200, one substrate can be loaded or unloaded at a time.

[0065] Furthermore, the cavity 200 can be radially divided into a first processing space 210, a second processing space 220, and a third processing space 230, and its regions can be divided at intervals of approximately 120 degrees.

[0066] Furthermore, in multiple processing spaces, two substrates can be located in the first processing space 210, two substrates can be located in the second processing space 220, and two substrates can be located in the third processing space 230, and thus, six substrates can be mounted on a base 201.

[0067] The controller 600 can be connected to the inside or outside of the cavity 200 and can rotate the base 201 clockwise or counterclockwise.

[0068] Reference Figure 2When viewed from above, cavity 200 may include a gas ejector G100, which may include a first ejector G1, a second ejector G3, and a third ejector G2. The first ejector G1, which ejects source gas, may be located in the first processing space 210; the second ejector G3, which ejects reactive gas, may be located in the second processing space 220; and the third ejector G2, which ejects surface treatment gas, may be located in the third processing space 230. A plasma generator (not shown) for forming plasma may be additionally connected to the third ejector G2 in the third processing space 230, or electrodes (not shown) may be installed to directly form plasma. This disclosure is not limited thereto, and electrodes (not shown) may be installed in each of the first processing space 210, the second processing space 220, and the third processing space 230 to directly generate plasma. One of the multiple electrodes may be connected to a radio frequency (RF) power source, another of the multiple electrodes may be grounded, and the gas ejector G100 may include a plasma electrode (not shown) that forms plasma in one or more of the first ejector G1, the second ejector G3, and the third ejector G2.

[0069] The purging gas used to separate the space of the cavity 200 can be injected, and the cavity 200 may include a first purging unit 240 disposed in the radial direction in the central portion of the cavity 200 and injecting the purging gas into the area between the first injector G1 and the second injector G3.

[0070] The cavity 200 may include a second purging unit 250 disposed in the radial direction in the central portion of the cavity 200 and injecting purging gas into the area between the second injector G3 and the third injector G2.

[0071] The cavity 200 may include a third purging unit 260 disposed in the radial direction in the central portion of the cavity 200 and injecting purging gas into the area between the third injector G2 and the first injector G1.

[0072] In addition, the cavity 200 may include a fourth blow-out unit 270 disposed in the central portion of the cavity 200, and one side of the central portion of the fourth blow-out unit 270 may be connected to the first blow-out unit 240, the second blow-out unit 250 and the third blow-out unit 260 and may be connected to multiple units to divide the space.

[0073] The following describes the processing technology of the first substrate S1: A source gas can be injected by a first injector G1 in the first processing space 210, and the source gas can be injected into the upper part of the first substrate S1. The base 201 can rotate and can be moved to the second processing space 200 via the purge gas injected by the first purge unit 240. A reaction gas can be injected onto the first substrate S1 in the second processing space 220. The reaction gas can be injected by a second injector G3, and the base 201 can rotate and can be rotated to the second processing space 220 via the first purge unit 240. When the base 201 rotates, the first substrate S1 can be moved to the third processing space 230 via the second purge unit 250 that injects purge gas. A third injector G2 that injects surface treatment gas onto the first substrate S1 can be disposed in the third processing space 230. The surface treatment gas can be hydrogen or argon, and surface treatment can be performed by forming plasma. The first substrate S1 can then be moved from the third processing space 230 back to the first processing space 210 via the third purge unit 260. This cyclic process can be a single cycle, with the first cycle consisting of the substrate continuously rotating after the first processing space 210 until it reaches the third processing space 230 via the second processing space 220. The first cycle can be repeated multiple times until a deposited film of the desired thickness is formed. The deposited film of the desired thickness can be formed using atomic layer deposition (ALD) technology. Furthermore, after hydrogen plasma surface treatment, an additional oxygen plasma surface treatment can be performed in the third processing space 230.

[0074] A super-cycle can be performed, wherein a first cycle is performed in which source gas is injected into a first processing space 210, reactant gas is injected into a second processing space 220, and a gas containing hydrogen and a first surface treatment gas is injected as plasma into a third processing space 230. A second cycle is then performed in which source gas is not injected into the first processing space 210, reactant gas is not injected into the second processing space 220, and a gas containing oxygen and a second surface treatment gas is injected as plasma into the third processing space 230. The first cycle can be performed continuously, or the second cycle can be performed between multiple first cycles. Alternatively, the first and second cycles can be performed continuously after the first cycle (hydrogen plasma can be performed after the deposition process), after the second cycle (oxygen plasma can be performed after the non-deposition process), and after the first cycle (hydrogen plasma can be performed after the deposition process), and the second cycle (oxygen plasma can be performed after the non-deposition process) can be performed. Therefore, it is possible to perform hydrogen plasma treatment and oxygen plasma treatment after the deposition process.

[0075] The cavity 200 may include an exhaust unit (not shown) for venting the interior of the cavity 200, and the exhaust unit may be disposed in the first processing space 210 and / or the second processing space 220. The substrate processing apparatus may include a base controller 600 that allows the base 201 to pass sequentially through the second ejector G3, the second blow-off unit 250, the third ejector G2, and the third blow-off unit 260 and performs control to repeatedly rotate or stop the base 201 within the cavity 200. Furthermore, the substrate processing apparatus may include the base controller 600 that performs control to repeatedly rotate or stop the base 201 within the cavity 200.

[0076] Furthermore, the substrate processing apparatus may include a base controller 600 for executing control, such that when the base 201 passes through the first ejector G1, the second ejector G3, and the third ejector G2, the base 201 is stopped, its movement is slowed down, or its movement speed is increased for a certain period of time. The substrate processing apparatus may also include a base controller 600 for executing control, such that when one of the plurality of substrates S1, S2, and S3 passes through one of the first ejector G1, the second ejector G3, and the third ejector G2, the base 201 is stopped, its movement speed is slowed down, or its movement speed is increased for a certain period of time. The processing time in the first processing space 210, the second processing space 220, and the third processing space 230 may be a certain time, and this certain time may be the time during which the base 201 stops, slows down, or increases its movement speed within each of the first processing space 210, the second processing space 220, and the third processing space 230. This certain time may be the processing time and may be from 1 second (s) to 30 seconds (s).

[0077] When the first substrate S1 rotates on the base 201, process gases can be applied sequentially and in the same manner to the second substrate S3 and the third substrate S2. Although the embodiment has been described with respect to the first substrate S1, the same application can be made to the second substrate S3 and the third substrate S2. Furthermore, processes can be performed simultaneously on the two substrates in the first processing space 210. Processes can be performed simultaneously on the two substrates in the second processing space 220. Processes can be performed simultaneously on the two substrates in the third processing space 230.

[0078] The substrate processing apparatus may include a base controller 600 for performing control, such that when the base 201 passes through the first ejector G1, the second ejector G3 and the third ejector G2, the base 201 is stopped or its movement is slowed or accelerated for a certain period of time, and at least one or more of the first ejector G1, the second ejector G3 and the third ejector G2 may include a plasma electrode (not shown).

[0079] Furthermore, the multiple substrates on the base 201 can be three substrates or six substrates, and when the multiple substrates are six substrates, two substrates can be provided in each injector.

[0080] The source gas ejected from the first ejector G1 can be a precursor or a gas containing silicon or metal, and the reactant gas ejected from the second ejector G3 can be a gas that reacts with the source gas to form an oxide film, nitride film, dielectric film, or metal film. Furthermore, the surface treatment gas ejected from the third ejector G2 can be a plasma gas, and the surface treatment gas can be a gas containing hydrogen or oxygen.

[0081] The plurality of substrates may include a first substrate S1, a second substrate S3, and a third substrate S2, and the first substrate S1 located on the base 201 may be controlled to stop in the first ejector G1, the second ejector G3, and the third ejector G2. The plurality of substrates located on the base 201 may be exposed to purging gas in at least one or more of the first purging unit 240, the second purging unit 250, and the third purging unit 260. The substrate processing apparatus may include a first purging unit 240 disposed in the radial direction of the central portion of the cavity 200 and spraying purging gas into the area between the first ejector G1 and the second ejector G3; a second purging unit 250 disposed in the radial direction of the central portion of the cavity 200 and spraying purging gas into the area between the second ejector G3 and the third ejector G2; and a third purging unit 260 disposed in the radial direction of the central portion of the cavity 200 and spraying purging gas into the area between the third ejector G2 and the first ejector G1. The substrate processing method may rotate the base 201 so that each substrate of the base 201 is sequentially exposed to the source gas, the reaction gas, and the surface treatment gas.

[0082] Furthermore, the base can rotate in one direction or in the opposite direction. The following describes the process of the base 201 rotating in the opposite direction to the first substrate S1: When the source gas is ejected by the first ejector G1 of the first processing space 210, the source gas can be ejected onto the first substrate S1, and the base can rotate in the opposite direction, moving to the third processing space 230 via the purge gas ejected by the third purge unit 260. In this manner, the base can rotate to the third processing space 230, and therefore at least one plasma gas selected from hydrogen plasma, oxygen plasma, or argon plasma can be used to perform a surface treatment process for removing impurities from the source gas. The surface treatment process can be performed on the first substrate S1 in the third processing space 230, and the first substrate S1 can move to the second processing space 220 where the reactive gas is ejected. Furthermore, the first substrate S1 can move from the second processing space 200 to the first processing space 210.

[0083] Reference Figure 1 and Figure 2 The gas ejector G100, which sprays gas toward multiple substrates S1, S2, S3 and base 201 (where multiple substrates, such as at least three or more, three or six substrates, are disposed in the cavity 200), can be a first ejector G1 spraying source gas, a second ejector G3 spraying reactive gas, and a third ejector G2 spraying surface treatment gas. When there are six substrates, two substrates can be exposed to each of the multiple ejectors G1, G2, G3.

[0084] The gas ejector G100 may include a plasma generator (not shown) that generates plasma in at least one of a first ejector G1 for ejecting source gas, a second ejector G3 for ejecting reactive gas, and a third ejector G2 for ejecting surface treatment gas. The plasma generator may include a first electrode and a second electrode, one of which may be connected to an RF power source, and the other may be grounded. A potential difference may be formed between the first and second electrodes connected to each other, and plasma gas is supplied, allowing plasma to form between the first and second electrodes.

[0085] In addition, refer to Figure 1 and Figure 2 The substrate processing apparatus may include a first purging unit 240 disposed in the radial direction of the central portion of the cavity 200 and spraying purging gas into the region between the first injector G1 and the second injector G3; a second purging unit 250 disposed in the radial direction of the central portion of the cavity 200 and spraying purging gas into the region between the second injector G3 and the third injector G2; and a third purging unit 260 disposed in the radial direction of the central portion of the cavity 200 and spraying purging gas into the region between the third injector G2 and the first injector G1.

[0086] Reference Figure 1 and Figure 2The substrate processing apparatus may include a base 201 in which multiple substrates (e.g., three or more substrates) are disposed in a cavity 200, and a gas ejector G100 for injecting gas toward the multiple substrates. The gas ejector G100 may include a first ejector G1 for injecting source gas, a second ejector G3 for injecting reactive gas, and a third ejector G2 for injecting surface treatment gas. The base 201 may be rotated such that the multiple substrates of the base 201 pass through the source gas, reactive gas, and surface treatment gas sequentially and repeatedly. The substrate processing apparatus may include a controller 600 for executing the rotation, so that the multiple substrates of the base 201 pass through the source gas and reactive gas sequentially and repeatedly. The substrate processing method may rotate the base 201 such that each substrate of the base 201 passes through the first ejector G1, the second ejector G3, and the third ejector G2 sequentially. Furthermore, the substrate processing method may also rotate the base 201 such that each substrate of the base 201 is sequentially exposed to the source gas, the surface treatment gas, and the reactive gas.

[0087] The controller 600 can perform control such that when one of the multiple substrates passes through one of the first ejector G1, the second ejector G3, and the third ejector G2, the base 201 stops moving or slows down or speeds up its movement for a certain period of time.

[0088] A certain period of time can be the processing time for the base 201 to pass through one of the first injector G1, the second injector G3 and the third injector G2, and the base 201 can stop moving or its moving speed can be slowed down or accelerated within a certain period of time.

[0089] Furthermore, the substrate processing apparatus may include a base 201 in which multiple substrates (e.g., three or more substrates) are disposed in a cavity 200, and a gas ejector G100 for injecting gas toward the multiple substrates. The gas ejector G100 may be a substrate processing apparatus comprising a first ejector G1 for injecting source gas, a second ejector G3 for injecting reactive gas, and a third ejector G2 for injecting surface treatment gas. The base 201 may rotate such that the multiple substrates of the base 201 pass through the source gas, the surface treatment gas, and the reactive gas sequentially and repeatedly.

[0090] The substrate processing apparatus may include a controller 600 that performs rotation to cause multiple substrates of the base 201 to pass sequentially and repeatedly through a source gas, a surface treatment gas, and a reaction gas.

[0091] The processing time in the first processing space 210, the second processing space 220 and the third processing space 230 can be a certain time, and the certain time can be the time during which the base 201 stops moving or slows down or speeds up in each of the first processing space 210, the second processing space 220 and the third processing space 230.

[0092] Reference Figure 3 and Figure 4 The cavity 2000 of the substrate processing apparatus according to this disclosure may include a plurality of processing spaces. The plurality of processing spaces of the cavity 2000 may include a first processing space 2100, a second processing space 2200, a third processing space 2300 and a fourth processing space 2900, and the base 2010 may be located in the lower portion of each of the first processing space 2100, the second processing space 2200, the third processing space 2300 and the fourth processing space 2900.

[0093] At least four substrates can be mounted on the base 2010, and the first substrate S10, the second substrate S30, the third substrate S20 and the fourth substrate S40 can be located in the first processing space 2100, the second processing space 2200, the third processing space 2300 and the fourth processing space 2900 respectively, but are not limited thereto, and when rotated, another substrate can be placed in each space.

[0094] The gas ejector G1000 may include a first ejector G10 for ejecting source gas, a second ejector G30 for ejecting reactive gas, a third ejector G20 for ejecting surface treatment gas, and a fourth ejector G40 for ejecting deposition prevention gas. The gas ejector G1000 may include a plasma electrode (not shown) for forming plasma in one or more of the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40.

[0095] In addition, the substrate processing apparatus may include a controller 600 for performing control, such that when one of the multiple substrates passes through the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40, the base 2010 is stopped or its movement is slowed or accelerated for a certain period of time.

[0096] At this time, with the first substrate S10, the second substrate S30, the third substrate S20, and the fourth substrate S40 loaded into the cavity 2000, one substrate can be loaded or unloaded at a time. The cavity 2000 can be radially divided into a first processing space 2100, a second processing space 2200, a third processing space 2300, and a fourth processing space 2900, and the angle of its regions can be divided at intervals of approximately 90 degrees.

[0097] Furthermore, two substrates can be located in multiple processing spaces. Two substrates can be located in a first processing space 2100, two substrates can be located in a second processing space 2200, two substrates can be located in a third processing space 2300, and two substrates can be located in a fourth processing space 2900. Therefore, up to eight substrates can be mounted on the base 2010, and three or more substrates or up to eight substrates can be mounted on the base 2010.

[0098] The controller 6000 can be connected to the inside or outside of the cavity 2000. Rotation can be performed in the same direction as or opposite to the rotation direction of the base 2010, clockwise or counterclockwise. The base 2010 can rotate to the left or to the right. The base 2010 can rotate clockwise or counterclockwise. The controller 6000 can be used to control the rotation of the base 2010, and the controller 6000 can control the gas injection of the first injector G10 (which acts as a gas injector), the second injector G30 (which injects reactive gas), the third injector G20 (which injects surface treatment gas), and the fourth injector G40 (which injects deposition prevention gas).

[0099] Reference Figure 3 and Figure 4 When viewed from above the cavity 2000, a first ejector G10 for injecting source gas can be disposed in the first processing space 2100, a second ejector G30 for injecting reactive gas can be disposed in the second processing space 2200, a third ejector G20 for injecting surface treatment gas can be disposed in the third processing space 2300, and a fourth ejector G40 for injecting deposition prevention gas can be disposed in the fourth processing space 2900. A plasma generator for forming plasma can be additionally connected to the third ejector G20 in the third processing space 2300, or electrodes (not shown) can be installed to directly form plasma. This disclosure is not limited thereto, and plasma electrodes (not shown) can be installed and disposed in at least one of the first ejector G10 in the first processing space 2100, the second ejector G30 in the second processing space 2200, the third ejector G20 in the third processing space 2300, and the fourth ejector G40 in the fourth processing space 2900 to form plasma. One of the multiple electrodes can be connected to an RF power source, and another of the multiple electrodes can be grounded.

[0100] The purge gas used to separate the space of the cavity 2000 can be injected, and the cavity 2000 may include a first purge unit 2400 disposed in the radial direction of the central portion of the cavity 2000 and injecting purge gas into the area between the first injector G10 and the fourth injector G40. The cavity 2000 may include a second purge unit 2500 disposed in the radial direction of the central portion of the cavity 2000 and injecting purge gas into the area between the fourth injector G40 and the second injector G30, a third purge unit 2600 disposed in the radial direction of the central portion of the cavity 2000 and injecting purge gas into the area between the second injector G30 and the third injector G20, and a fourth purge unit 2800 disposed in the radial direction of the central portion of the cavity 2000 and injecting purge gas into the area between the third injector G20 and the first injector G10.

[0101] Furthermore, the cavity 2000 may include a fifth purging unit 2700 disposed in the central portion of the cavity. One side of the fifth purging unit 2700 may be connected to the first purging unit 2400, the second purging unit 2500, the third purging unit 2600 and the fourth purging unit 2800 and may be connected thereto to divide the processing space.

[0102] The following describes the process method of the apparatus of this disclosure with respect to the first substrate S10: The source gas can be injected by the first injector G1 in the first processing space 2100, and the source gas can be injected into the upper part of the first substrate S10. The base 2010 can rotate and can be moved to the fourth processing space 2900 via the purging gas injected by the first purging unit 2400. Deposition prevention gas can be injected into the first substrate S10, which has already adsorbed the source gas, in the fourth processing space 2900. The deposition prevention gas can be injected onto the source gas adsorbed on the first substrate S10 or onto the source gas adsorbed at the inlet or upper part of the pattern, thus preventing the deposition of subsequently injected reactive gas, thereby improving the step coverage of the pattern.

[0103] Subsequently, the first substrate S1 can be moved to the second processing space 2200 via the second purging unit 2500. A reactive gas can be injected into the second processing space 2200, and the reactive gas can be injected by the second injector G30. When the base 2010 rotates, it can be moved to the third processing space 2300 via the third purging unit 2600. A third injector G20, which injects surface treatment gas onto the first substrate S10, can be disposed in the third processing space 2300. The surface treatment gas can be one or more of hydrogen, oxygen, and argon, and when plasma is formed using the surface treatment gas, surface treatment can be performed on the thin film deposited on the first substrate S10. The first substrate S10 can then be moved from the third processing space 2300 to the first processing space 2100 via the fourth purging unit 2800. This cyclic process can be a single cycle, and the first cycle can be after the substrate has been in the first processing space 2100, continuously rotating until it reaches the third processing space 2300 via the fourth processing space 2900 and the second processing space 2200. The first cycle can be rotated and repeated multiple times until a deposited film of the desired thickness is formed. A deposited film of the desired thickness can be formed using an atomic layer deposition (ALD) process.

[0104] In addition, refer to Figure 3 and Figure 4 The process of the first substrate S10 according to another embodiment of the present disclosure describes that the fourth ejector G40 can first inject a deposition prevention gas onto the first substrate S10 in the fourth processing space 2900, and then, when the base 2010 rotates clockwise, the first ejector G10 in the first processing space 2100 can inject a source gas through the first purging unit 2400 and can inject the source gas onto the first substrate S10 to adsorb the source gas onto the first substrate S10. The deposition prevention gas can be a deposition prevention agent. This can be performed by a processing method of first injecting a deposition prevention gas and then injecting a source gas. When the base 2010 rotates, it can pass through the fourth purging unit 2800 and can move to the third processing space 2300. At least one of hydrogen, oxygen, and argon can be used in the second ejector G30 in the third processing space 2300 to form a plasma, and multiple electrodes (not shown) or a plasma generator (not shown) for forming plasma can be additionally connected to the second ejector G30. Plasma can be directly formed in cavity 2000 through multiple electrodes (not shown). The plasma formed by using one or more gases selected from hydrogen, oxygen, and argon can be the surface treatment gas for the second injector G30 of the third processing space 2300, and the surface treatment gas can have the effect of removing impurities of the source gas adsorbed on the first substrate S10.

[0105] A cycle starting from the fourth processing space 2900 can sequentially and continuously rotate four spaces: the fourth processing space 2900, the first processing space 2100, the third processing space 2300, and the second processing space 2200. One continuous rotation of the four spaces can be referred to as the first cycle. The first cycle can be repeated until a deposited film of the desired thickness is formed. A deposited film of the desired thickness can be formed using atomic layer deposition (ALD) technology, and the rotation can be repeated as the desired thickness is achieved.

[0106] Furthermore, the base 2010 can rotate so that each substrate of the base passes through the first ejector G10, the fourth ejector G40, the second ejector G30 and the third ejector G20 in sequence, and the base 2010 rotates so that each substrate of the base is exposed to the source gas, the deposition prevention gas, the reaction gas and the surface treatment gas in sequence.

[0107] The cavity 200 may include an exhaust unit (not shown) for venting the interior of the cavity 200, and the exhauster may be disposed in the first processing space 2100 and / or the fourth processing space 2900. The substrate processing apparatus may include a controller 6000 for controlling the base 2010 to allow the base 201 to repeatedly rotate or stop within the cavity 2000. The controller 6000 can control the rotation of the base 2010 and can control the gas flow rate of each of the first injector G10, the second injector G30, the third injector G20, and the fourth injector G40.

[0108] When the base 2010 passes through the first injector G10, the third injector G20, the second injector G30 and the fourth injector G40, the base 2010 may stop moving for a certain period of time, or may include a controller 6000 that controls the speed of the base 2010 to adjust the speed of movement of the base 2010 by speeding up or slowing down.

[0109] When the first substrate S10 rotates on the base 2010, the process gas can be applied sequentially and in the same manner to the second substrate S20, the third substrate S30, and the fourth substrate S40. Although the embodiment has been described with respect to the first substrate S10, it can be applied in the same way to the second substrate S20, the third substrate S30, and the fourth substrate S40.

[0110] Furthermore, processes can be performed simultaneously on two substrates in the first processing space 2100. Processes can be performed simultaneously on two substrates in the second processing space 2200. Processes can be performed simultaneously on two substrates in the third processing space 2300. And, processes can be performed simultaneously on two substrates in the fourth processing space 2900.

[0111] The substrate processing apparatus may include a controller 6000 for performing control, such that when the base 201 passes through the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40, the base 2010 is stopped or its movement is slowed or accelerated for a certain period of time, and plasma electrodes may be installed in at least one or more of the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40.

[0112] The source gas ejected from the first ejector G10 can be a precursor or a gas containing silicon or metal, and the reactant gas ejected from the second ejector G30 can be a gas that reacts with the source gas to form an oxide film, nitride film, dielectric film, or metal film. Furthermore, the surface treatment gas ejected from the third ejector G20 can be a plasma gas, and the surface treatment gas can be a gas containing one or more of hydrogen, oxygen, and argon. The deposition prevention gas ejected from the fourth ejector G40 can be a gas containing ethanol.

[0113] Reference Figure 3 and Figure 4 The substrate processing apparatus may include a base 201 in which multiple substrates S10, S20, S30, and S40 (e.g., at least four substrates) are disposed in a cavity 2000, and a gas ejector G1000 for injecting gas toward the multiple substrates S10, S20, S30, and S40. The gas ejector G1000 may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. The base 201 may rotate such that each substrate of the base 2010 passes sequentially and repeatedly through the fourth ejector G40, the first ejector G10, the second ejector G30, and the third ejector G20.

[0114] The base 2010 is rotatable, allowing each substrate of the base 2010 to be sequentially exposed to a deposition prevention gas, a source gas, a reaction gas, and a surface treatment gas. Furthermore, the controller 6000 can perform control so that, when one of the multiple substrates passes through the first ejector G10, the second ejector G30, and the third ejector G20, the base 2010 stops moving or slows down or speeds up its movement for a certain period of time.

[0115] The substrate processing apparatus may include a first purging unit 2400 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the first injector G10 and the fourth injector G40; a second purging unit 2500 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the fourth injector G40 and the second injector G30; a third purging unit 2600 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the second injector G30 and the third injector G20; and a fourth purging unit 2800 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the third injector G20 and the first injector G10.

[0116] The cavity 200 can be a substrate processing device that includes an exhaust device (not shown) for venting gas from the interior of the cavity 2000. The base 2010 can rotate such that multiple substrates S10, S20, S30, and S40 on the base 2010 pass sequentially through the first ejector G10, the first blow-off unit 2400, the fourth ejector G40, the second blow-off unit 2500, the second ejector G30, the third blow-off unit 2600, the third ejector G20, and the fourth blow-off unit 2800. The substrate processing device may include a controller 6000 that controls the base 201 to stop moving for a certain period of time when the base 201 passes through the first ejector G10, the fourth ejector G40, the second ejector G30, and the third ejector G20.

[0117] Furthermore, the first substrate S10 can rotate within the space of each of the first ejector G10, the fourth ejector G40, the second ejector G30, and the third ejector G20, such that it stops or its speed is lower than that of the first blow-off unit 2400, the second blow-off unit 2500, the third blow-off unit 2600, and the fourth blow-off unit 2800. For example, when passing the lower part of the first ejector G10, the rotational speed of the first substrate S10 can be lower than the rotational speed of the first blow-off unit 2400, and the speed can be controlled so that the speed of the first substrate S10 is lower than that of the first blow-off unit 2400 when passing the lower part of the first ejector G10. Moreover, this is not limited to the description of the first ejector G10 and can be applied similarly to the second ejector G30, the third ejector G20, and the fourth ejector G40.

[0118] Furthermore, a controller 6000 that controls the base 2010 to slow down or speed up its movement can be connected to the base 2010 in the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40. A controller 6000 that performs control to stop the movement of multiple substrates for a certain period of time can be connected to and / or included in the base 2010 located below the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40.

[0119] Reference Figure 3 and Figure 4 At least four or eight substrates may be contained within a cavity 2000, and a base 2010 on which multiple substrates S10, S20, S30, and S40 are mounted may be contained within the cavity 2000. The cavity 2000 may include a gas ejector G1000 for injecting gas toward the multiple substrates S10, S20, S30, and S40. The gas ejector G1000 for injecting source gas may include a first ejector G10, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. Plasma may occur in the first ejector G10 for injecting source gas, the second ejector G30 for injecting reactive gas, the third ejector G20 for injecting surface treatment gas, and the fourth ejector G40 for injecting deposition prevention gas.

[0120] The substrate processing apparatus may include a first purging unit 2400 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the first injector G10 and the fourth injector G40; a second purging unit 2500 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the fourth injector G40 and the second injector G30; a third purging unit 2600 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the second injector G30 and the third injector G20; and a fourth purging unit 2800 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the third injector G20 and the first injector G10. Furthermore, the cavity 2000 may include an exhauster (not shown) for exhausting gas from the interior of the cavity 2000.

[0121] The description of the processing method for multiple substrates S10, S20, S30, S40 based on the rotation of the base 2010 can be applied to one of the multiple substrates S10, S20, S30, S40 in the same way.

[0122] One of the multiple substrates S10, S20, S30, and S40 can be rotated to pass sequentially through the first ejector G10, the first purging unit 2400, the fourth ejector G40, the second purging unit 2500, the second ejector G30, the third purging unit 2600, the third ejector G20, and the fourth purging unit 2800. The multiple substrates can be sequentially exposed to the source gas, the first purging gas, the deposition prevention gas, the second purging gas, the reaction gas, the third purging gas, the surface treatment gas, and the fourth purging gas.

[0123] In addition, multiple substrates can be exposed in sequence to deposition prevention gas, source gas, fourth purging gas, surface treatment gas, third purging gas, reaction gas, and second purging gas.

[0124] Reference Figure 3 and Figure 4 A base 2010, on which multiple substrates S10, S20, S30, and S40, including at least four or eight substrates, are mounted, may be contained within a cavity 2000. The cavity 2000 may include a gas ejector G1000 for injecting gas toward the multiple substrates S10, S20, S30, and S40. The gas ejector G1000 may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas.

[0125] When the base 2010 rotates, multiple substrates S10, S20, S30, and S40 can rotate to pass sequentially through the fourth ejector G40, the first purging unit 2400, the first ejector G10, the fourth purging unit 2800, the third ejector G20, the third purging unit 2600, the second ejector G30, and the second purging unit 2500. The multiple substrates S10, S20, S30, and S40 can be sequentially exposed to the deposition prevention gas, the first purging gas, the source gas, the fourth purging gas, the surface treatment gas, the third purging gas, the reaction gas, and the second purging gas.

[0126] Reference Figure 3 and Figure 4The device comprises a gas ejector G1000 that sprays gas toward a base, and a base 2010 containing at least four or more substrates within a cavity 2000. The gas ejector G1000 may include a first ejector G10 that sprays source gas, a second ejector G30 that sprays reactive gas, a third ejector G20 that sprays surface treatment gas, and a fourth ejector G40 that sprays deposition prevention gas. The gas ejector G1000 may be a substrate processing apparatus including a plasma generator (not shown), which generates plasma in at least one of the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40. The plasma generator (not shown) may be a substrate processing apparatus including a controller 6000 that controls the plasma generator (not shown). The controller 6000 that controls the plasma generator (not shown) can control the speed of the base 2010.

[0127] Furthermore, the substrate processing apparatus may include a first purging unit 2400 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the first injector G10 and the fourth injector G40; a second purging unit 2500 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the fourth injector G40 and the second injector G30; and a third purging unit 2600 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the second injector G30 and the third injector G20. Additionally, the substrate processing apparatus may include a fourth purging unit 2800 disposed in the radial direction of the central portion of the cavity 2000 and injecting purging gas into the region between the third injector G20 and the first injector G10.

[0128] Reference Figure 3 and Figure 4The substrate processing apparatus may include a base 2010 in which a plurality of substrates, including at least four substrates, are disposed in a cavity 2000, and a gas ejector G1000 for injecting gas toward the base. The gas ejector G1000 may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. In the substrate processing method of the substrate processing apparatus, the plurality of substrates in the base 2010 may be rotated to sequentially and repeatedly pass through the source gas, deposition prevention gas, reactive gas, and surface treatment gas. Furthermore, the substrate processing apparatus performing the substrate processing method may include a base controller 6000 for controlling rotation, causing the plurality of substrates in the base 2010 to rotate to sequentially and repeatedly pass through the source gas, deposition prevention gas, reactive gas, and surface treatment gas.

[0129] Reference Figure 3 and Figure 4 The substrate processing apparatus may include a base 2010 in a cavity 2000 on which multiple substrates, including at least four substrates, are disposed, and a gas ejector G1000 for injecting gas toward the base. The gas ejector G1000 may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. In the substrate processing method of the substrate processing apparatus, the multiple substrates in the base 2010 may be rotated to sequentially and repeatedly pass through the deposition prevention gas, source gas, surface treatment gas, and reactive gas.

[0130] The substrate processing apparatus for performing the substrate processing method may include a base controller 6000 for controlling rotation, so that multiple substrates of the base 2010 are rotated to sequentially and repeatedly pass through the deposition of anti-gas, source gas, surface treatment gas and reaction gas.

[0131] The processing time in the first processing space 2100, the second processing space 2200, the third processing space 2300 and the fourth processing space 2400 can be a certain time, and the certain time can be the time during which the base 2010 in each of the first processing space 2100, the second processing space 2200, the third processing space 2300 and the fourth processing space 2400 stops moving or slows down or speeds up.

[0132] Reference Figure 3 and Figure 4The substrate processing apparatus may include a base 2010 containing a plurality of substrates, comprising at least four or fewer substrates, disposed within a cavity 2000; a gas ejector G1000 for injecting gas toward the base; and a controller 6000 for rotating the base 2010 relative to the gas ejector G1000. The gas ejector G1000 may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. The base 2010 may rotate such that each substrate of the base 2010 passes sequentially through the first ejector G10, the fourth ejector G40, the second ejector G30, and the third ejector G20. The base 2010 may rotate such that each substrate of the base 2010 is sequentially exposed to the source gas, the deposition prevention gas, the reactive gas, and the surface treatment gas. The controller 6000 can perform control such that, when one of the multiple substrates passes through one of the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40, the base 2010 is stopped or its movement is slowed or accelerated for a certain period of time. When the base 2010 rotates, each substrate of the base 2010 is sequentially exposed to the source gas, the deposition prevention gas, the reactive gas, and the surface treatment gas. The base can also rotate so that each substrate is exposed to the surface treatment gas after being exposed to the source gas and the deposition prevention gas.

[0133] In another embodiment, refer to Figure 3 and Figure 4 The substrate processing apparatus may include a base 2010 containing a plurality of substrates, comprising at least four or fewer substrates, disposed within a cavity 2000; a gas ejector G1000 for injecting gas toward the base; and a controller 6000 for rotating the base 2010 relative to the gas ejector G1000. The gas ejector G1000 may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. The base 2010 may rotate such that each substrate of the base 2010 passes sequentially through the first ejector G10, the third ejector G20, the fourth ejector G40, and the second ejector G30. The base 2010 may rotate such that each substrate of the base 2010 is sequentially exposed to the source gas, the surface treatment gas, the deposition prevention gas, and the reactive gas. The controller 6000 can perform control such that when one of the multiple substrates passes through one of the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40, the base 2010 stops moving or slows down or speeds up its movement for a certain period of time.

[0134] When the base 2010 is rotated, each substrate of the base 2010 is sequentially exposed to the source gas, the surface treatment gas, the deposition prevention gas, and the reaction gas. The base 2010 can be rotated so that each substrate is exposed to the surface treatment gas after being exposed to the reaction gas.

[0135] In another embodiment, refer to Figure 3 and Figure 4 The substrate processing apparatus may include a base 2010 containing a plurality of substrates, comprising at least four or fewer substrates, disposed within a cavity 2000; a gas ejector G1000 for injecting gas toward the base; and a controller 6000 for rotating the base 2010 relative to the gas ejector G1000. The gas ejector G1000 may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. The base 2010 is rotatable, such that each substrate of the base 2010 passes sequentially through the fourth ejector G40, the first ejector G10, the second ejector G30, and the third ejector G20, and the base 2010 is also rotatable, such that each substrate of the base 2010 is sequentially exposed to the deposition prevention gas, the source gas, the reactive gas, and the surface treatment gas. Furthermore, the controller 6000 can perform control such that, when one of the multiple substrates passes through one of the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40, the base 2010 is stopped or its movement speed is slowed or increased for a certain period of time. When the base 2010 rotates, each substrate of the base 2010 is sequentially exposed to a deposition prevention gas, a source gas, a reactive gas, and a surface treatment gas, and the base 2010 can rotate such that each substrate is exposed to the surface treatment gas after being exposed to the source gas and the reactive gas.

[0136] In another embodiment, refer to Figure 3 and Figure 4The substrate processing apparatus may include a base 2010 containing a plurality of substrates, comprising at least four or fewer substrates, disposed within a cavity 2000; a gas ejector G1000 for injecting gas toward the base; and a controller 6000 for rotating the base 2010 relative to the gas ejector G1000. The gas ejector G1000 of the substrate processing apparatus may include a first ejector G10 for injecting source gas, a second ejector G30 for injecting reactive gas, a third ejector G20 for injecting surface treatment gas, and a fourth ejector G40 for injecting deposition prevention gas. The base 2010 may rotate such that each substrate of the base 2010 passes sequentially through the fourth ejector G40, the first ejector G10, the third ejector G20, and the second ejector G30. The base 2010 may rotate such that each substrate of the base 2010 is sequentially exposed to the deposition prevention gas, the source gas, the surface treatment gas, and the reactive gas. The controller 6000 can perform control such that, when one of the multiple substrates passes through one of the first ejector G10, the second ejector G30, the third ejector G20, and the fourth ejector G40, the base 2010 is stopped or its movement is slowed or accelerated for a certain period of time. When the base 2010 rotates, each substrate of the base 2010 is sequentially exposed to a deposition prevention gas, a source gas, a surface treatment gas, and a reaction gas. The base 2010 can rotate so that each substrate is exposed to the surface treatment gas after being exposed to the reaction gas.

[0137] Reference Figures 5A to 5D Not limited to Figures 5A to 5D The configuration of the gas injectors, and based on the processing method, allows for the placement of a second gas injector G30, a third gas injector G20, or a fourth gas injector G40 at the position of the first gas injector G10. Furthermore, it is not limited to... Figures 5A to 5D The configuration of the gas injectors, and based on the processing method, allows the first gas injector G10, the third gas injector G20, or the fourth gas injector G40 to be positioned at the location of the second gas injector G30. Furthermore, it is not limited to... Figures 5A to 5D The configuration of the gas injectors, and based on the processing method, allows the first gas injector G10, the second gas injector G30, or the fourth gas injector G40 to be positioned at the location of the third gas injector G20. Furthermore, it is not limited to... Figures 5A to 5D The configuration of the gas injectors, and based on the processing method, the first gas injector G10, the second gas injector G30 or the third gas injector G20 can be located at the position of the fourth gas injector G40.

[0138] In detail, refer to Figure 5AProvided in a clockwise direction, gas can be injected into each space of a first injector G10 for injecting source gas, a fourth injector G40 for injecting deposition prevention gas, a second injector G30 for injecting reactive gas, and a third injector G20 for injecting surface treatment gas, and the substrate can pass through the multiple injectors in sequence.

[0139] In detail, refer to Figure 5B Provided in a clockwise direction, gas can be injected into the space of each of the first injector G10 for injecting source gas, the third injector G20 for injecting surface treatment gas, the fourth injector G40 for injecting deposition prevention gas, and the second injector G30 for injecting reactive gas, and the substrate can pass through the multiple injectors in sequence.

[0140] In detail, refer to Figure 5C Provided in a clockwise direction, gas can be injected into the space of each of the fourth injector G40 for injecting deposition prevention gas, the first injector G10 for injecting source gas, the second injector G30 for injecting reactive gas, and the third injector G20 for injecting surface treatment gas, and the substrate can pass through the multiple injectors in sequence.

[0141] In detail, refer to Figure 5D Provided in a clockwise direction, gas can be injected into the space of each of the fourth injector G40 for injecting deposition prevention gas, the first injector G10 for injecting source gas, the third injector G20 for injecting surface treatment gas, and the second injector G30 for injecting reactive gas, and the substrate can pass through the multiple injectors in sequence.

[0142] As described above, this disclosure is not limited to the embodiments and accompanying drawings, and those skilled in the art will clearly understand that various modifications, variations, and substitutions can be made to this disclosure without departing from its spirit and scope. Therefore, the scope of this disclosure should be interpreted as defined by the following claims rather than the embodiments, and all variations or modifications derived from the concepts equivalent to the claims are included within the scope of this disclosure.

Claims

1. A substrate processing apparatus, comprising: cavity; A base for mounting multiple substrates, including three or more substrates; as well as A gas injector sprays gas toward the plurality of substrates. The gas injector includes: First ejector, ejecting source gas; The second injector injects the reactive gas; and The third injector sprays surface treatment gas. The gas ejector includes a plasma electrode that forms plasma in one or more of the first ejector, the second ejector, and the third ejector.

2. The substrate processing apparatus of claim 1, further comprising a controller for performing control such that, when one of the plurality of substrates passes through one of the first ejector, the second ejector, and the third ejector, the one substrate stops moving or slows down or speeds up its movement for a certain period of time.

3. The substrate processing apparatus as described in claim 1, comprising: The first purging unit is disposed in the central part of the cavity in the radial direction and sprays purging gas into the area between the first injector and the second injector; The second purging unit is disposed in the central portion of the cavity in the radial direction and injects purging gas into the area between the second injector and the third injector; as well as The third purging unit is disposed in the central portion of the cavity in the radial direction and sprays purging gas into the area between the third injector and the first injector.

4. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising a base in which a plurality of substrates, including three or more substrates, are disposed in a cavity, a gas injector for injecting gas toward the base, and a controller for rotating the base relative to the gas injector, the gas injector comprising: First ejector, ejecting source gas; The second injector injects the reactive gas; as well as The third injector sprays surface treatment gas. The substrate processing method includes: The base is rotated so that each substrate of the base passes sequentially through the first ejector, the second ejector, and the third ejector.

5. The substrate processing method as described in claim 4, wherein, The base is rotated such that each substrate of the base is sequentially exposed to the source gas, the reaction gas, and the surface treatment gas.

6. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising a base in which a plurality of substrates, including three or more substrates, are disposed in a cavity, a gas ejector for injecting gas toward the base, and a controller for rotating the base relative to the gas ejector, the gas ejector comprising a first ejector for injecting source gas, a second ejector for injecting reactive gas, and a third ejector for injecting surface treatment gas, the substrate processing method comprising: The base is rotated so that each substrate of the base passes sequentially through the first ejector, the third ejector, and the second ejector.

7. The substrate processing method as described in claim 6, wherein, The base is rotated such that each substrate of the base is sequentially exposed to the source gas, the surface treatment gas, and the reaction gas.

8. The substrate processing method as described in claim 4 or 6, wherein, The controller performs control such that when one of the plurality of substrates passes through one of the first ejector, the second ejector, and the third ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

9. A substrate processing apparatus, comprising: cavity; A base for mounting multiple substrates, including at least four or more substrates; as well as A gas injector sprays gas toward the plurality of substrates. The gas injector includes: First ejector, ejecting source gas; The second injector injects the reactive gas; The third injector sprays surface treatment gas; and The fourth injector sprays deposition prevention gas. The gas ejector includes a plasma electrode that forms plasma in one or more of the first ejector, the second ejector, the third ejector, and the fourth ejector.

10. The substrate processing apparatus of claim 9, wherein the substrate processing apparatus includes a controller for performing control such that, when one of the plurality of substrates passes through one of the first ejector, the second ejector, the third ejector, and the fourth ejector, the one substrate stops moving or slows down or speeds up its movement for a certain period of time.

11. The substrate processing apparatus of claim 9, comprising: The first purging unit is disposed in the central portion of the cavity in the radial direction and sprays purging gas into the area between the first injector and the fourth injector; The second purging unit is disposed in the central portion of the cavity in the radial direction and injects purging gas into the area between the fourth injector and the second injector; The third purging unit is disposed in the central portion of the cavity in the radial direction and injects purging gas into the area between the second injector and the third injector; as well as The fourth purging unit is disposed in the central portion of the cavity in the radial direction and sprays purging gas into the area between the third injector and the first injector.

12. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising a base for mounting a plurality of substrates including at least four substrates, a gas ejector for injecting gas toward the base, and a controller for rotating the base relative to the gas ejector, the gas ejector comprising a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas, the substrate processing method comprising: The base is rotated such that each substrate of the base passes sequentially through the first ejector, the fourth ejector, the second ejector, and the third ejector.

13. The substrate processing method as described in claim 12, wherein, The base is rotated such that each substrate of the base is sequentially exposed to the source gas, the deposition prevention gas, the reaction gas, and the surface treatment gas.

14. The substrate processing method as described in claim 12 or 13, wherein, The controller performs control such that when one of the plurality of substrates passes one of the first ejector, the second ejector, the third ejector, and the fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

15. The substrate processing method as described in claim 13, wherein, When the base is rotated such that each substrate of the base is sequentially exposed to the source gas, the deposition prevention gas, the reaction gas, and the surface treatment gas, the base is rotated such that each substrate of the base is exposed to the surface treatment gas after being exposed to the source gas and the deposition prevention gas.

16. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising a base for mounting a plurality of substrates including at least four substrates, a gas ejector for injecting gas toward the base, and a controller for rotating the base relative to the gas ejector, the gas ejector comprising a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas, the substrate processing method comprising: The base is rotated such that each substrate of the base passes sequentially through the first ejector, the third ejector, the fourth ejector, and the second ejector.

17. The substrate processing method as described in claim 16, wherein, The base is rotated such that each substrate of the base is sequentially exposed to the source gas, the surface treatment gas, the deposition prevention gas, and the reaction gas.

18. The substrate processing method as described in claim 16 or 17, wherein, The controller performs control such that when one of the plurality of substrates passes one of the first ejector, the second ejector, the third ejector, and the fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

19. The substrate processing method as described in claim 17, wherein, When the base is rotated such that each substrate of the base is sequentially exposed to the source gas, the surface treatment gas, the deposition prevention gas, and the reaction gas, the base is rotated such that each substrate of the base is exposed to the surface treatment gas after being exposed to the reaction gas.

20. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising a base for mounting a plurality of substrates including at least four substrates, a gas ejector for injecting gas toward the base, and a base controller for rotating the base relative to the gas ejector, the gas ejector comprising a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas, the substrate processing method comprising: The base is rotated so that each substrate of the base passes sequentially through the fourth ejector, the first ejector, the second ejector, and the third ejector.

21. The substrate processing method as described in claim 20, wherein, The base is rotated such that each substrate of the base is sequentially exposed to the deposition prevention gas, the source gas, the reaction gas, and the surface treatment gas.

22. The substrate processing method as described in claim 20 or 21, wherein, The controller performs control such that when one of the plurality of substrates passes one of the first ejector, the second ejector, the third ejector, and the fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

23. The substrate processing method as described in claim 21, wherein, When the base is rotated such that each substrate of the base is sequentially exposed to the deposition prevention gas, the source gas, the reaction gas, and the surface treatment gas, the base is rotated such that each substrate of the base is exposed to the surface treatment gas after being exposed to the source gas and the reaction gas.

24. A substrate processing method using a substrate processing apparatus, the substrate processing apparatus comprising a base for mounting a plurality of substrates including at least four substrates, a gas ejector for injecting gas toward the base, and a base controller for rotating the base relative to the gas ejector, the gas ejector comprising a first ejector for injecting source gas, a second ejector for injecting reactive gas, a third ejector for injecting surface treatment gas, and a fourth ejector for injecting deposition prevention gas, the substrate processing method comprising: The base is rotated so that each substrate of the base passes sequentially through the fourth ejector, the first ejector, the third ejector, and the second ejector.

25. The substrate processing method as described in claim 24, wherein, The base is rotated such that each substrate of the base is sequentially exposed to the deposition prevention gas, the source gas, the surface treatment gas, and the reaction gas.

26. The substrate processing method as described in claim 25 or 26, wherein, The base controller performs control such that when one of the plurality of substrates passes one of the first ejector, the second ejector, the third ejector, and the fourth ejector, that substrate stops moving or slows down or speeds up its movement for a certain period of time.

27. The substrate processing method as described in claim 25, wherein, When the base is rotated such that each substrate of the base is sequentially exposed to the deposition prevention gas, the source gas, the surface treatment gas, and the reaction gas, the base is rotated such that each substrate of the base is exposed to the surface treatment gas after being exposed to the reaction gas.

28. The substrate processing apparatus according to any one of claims 1, 4, and 6, wherein, The plurality of substrates may be three substrates or six substrates.

29. The substrate processing method according to any one of claims 4, 6, 12, and 14, wherein, The surface treatment gas is a plasma gas.

30. The substrate processing method according to any one of claims 4, 6, 12, and 14, wherein, The surface treatment gas is a gas containing hydrogen or oxygen.

Images