Method for forming thin film
The method addresses non-uniform deposition on substrates with large aspect ratios by using a multi-zone substrate processing apparatus with repeated gas injections and rotations, ensuring uniform thin film formation and enhanced productivity.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- JUSUNG ENG
- Filing Date
- 2025-11-14
- Publication Date
- 2026-05-21
AI Technical Summary
Existing thin film formation methods struggle to uniformly deposit source gas on substrates with patterns having a large aspect ratio, leading to non-uniform deposition and potential quality issues.
A method involving a substrate processing apparatus with multiple spatially separated gas injection zones and a rotating susceptor, where source gas is injected multiple times onto the substrate, followed by reactant gas injection, and the substrate is rotated between these zones to ensure uniform deposition using an atomic layer deposition (ALD) process.
The method achieves uniform deposition of source gas on substrates with large aspect ratios, improving the quality and productivity of the thin film formation process by reducing residual gas usage and minimizing gas mixing.
Smart Images
Figure KR2025018818_21052026_PF_FP_ABST
Abstract
Description
Thin film formation method
[0001] The present invention relates to a method for forming a thin film on a substrate.
[0002] Generally, to manufacture semiconductor devices, display devices, solar cells, etc., it is necessary to form a predetermined thin film layer, thin film circuit pattern, or optical pattern on a substrate. To this end, processing steps are performed on the substrate, such as a deposition process for depositing a thin film of a specific material on the substrate, a photolithography process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film from the selectively exposed portions to form a pattern.
[0003] Here, a thin film formation method according to the prior art performed a processing process on the substrate by sequentially spraying a source gas and a reactant gas. In this case, the thin film formation method according to the prior art was implemented to perform the processing process by spraying the source gas once and then spraying the reactant gas. However, in the case of the substrate on which a pattern with a large aspect ratio is formed, if the source gas is sprayed only once, there is a problem that the source gas cannot be uniformly deposited on the pattern.
[0004] The present invention was devised to solve the problems described above and aims to provide a thin film formation method capable of uniformly depositing a source gas on a substrate formed in a pattern with a large aspect ratio.
[0005] In order to solve the above problems, the present invention may include the following configuration.
[0006] The present invention relates to a method for forming a thin film of a substrate processing apparatus comprising a chamber including a first space for injecting a source gas and a second space for injecting a reactant gas, and a susceptor located inside the chamber and supporting a first substrate and a second substrate, wherein the method may include: a) injecting the source gas multiple times onto the first substrate located in the first space; b) continuously injecting the reactant gas onto the second substrate located in the second space; c) positioning the first substrate in the second space and positioning the second substrate in the first space; d) injecting the source gas multiple times onto the second substrate located in the first space; and e) continuously injecting the reactant gas onto the first substrate located in the second space.
[0007] Another embodiment of the present invention provides a thin film forming method using a substrate processing apparatus comprising a chamber including a first space for injecting a first gas and a second space for injecting a second gas, and a susceptor located inside the chamber and supporting a first substrate and a second substrate, the method comprising: a) injecting a first gas onto a first substrate located in the first space; b) rotating the susceptor in a first direction or a second direction so that the first substrate located in the first space moves to the second space; c) injecting a second gas onto the first substrate located in the second space; and d) rotating the susceptor in the first direction or a second direction so that the first substrate located in the second space moves to the first space.
[0008] According to the present invention, the following effects can be achieved.
[0009] The present invention enables the uniform deposition of a source gas on a substrate having a pattern with a large aspect ratio by spraying the source gas onto the substrate multiple times. Accordingly, the present invention can improve the quality of the substrate after the processing process is completed.
[0010] FIG. 1 is a schematic perspective view of a substrate processing apparatus according to the present invention.
[0011] FIG. 2 is a schematic plan view of a susceptor in a substrate processing apparatus according to the present invention.
[0012] FIG. 3 is a schematic plan view of a susceptor according to another embodiment of a substrate processing apparatus according to the present invention.
[0013] FIG. 4 is a schematic cross-sectional view of a substrate processing apparatus according to the present invention.
[0014] FIG. 5 is a schematic diagram of a thin film formation method according to the present invention.
[0015] FIG. 6 is a configuration diagram of step a) in the thin film formation method according to the present invention.
[0016] FIG. 7 is a schematic flowchart of a thin film formation method according to the present invention.
[0017] Hereinafter, an embodiment of the thin film formation method according to the present invention will be described in detail with reference to the attached drawings. The thin film formation method according to the present invention can be performed by a substrate processing device (1). Before describing an embodiment of the thin film formation method according to the present invention, an example of the substrate processing device (1) will be examined in detail as follows.
[0018] Referring to FIGS. 1 and FIGS. 2, the substrate processing device (1) performs a processing process on a substrate (S). The substrate (100) may be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing device (1) may perform a deposition process for depositing a thin film on the substrate (100), an etching process for removing a portion of the thin film deposited on the substrate (100), etc. Hereinafter, the description is based on an embodiment in which the substrate processing device (1) performs the deposition process, but it will be obvious to a person skilled in the art to which the present invention belongs that the substrate processing device (1) performs other processing processes, such as the etching process, from this.
[0019] The above substrate processing device (1) may include a chamber (2), a susceptor (3), a spraying unit (4), and a supply unit (5).
[0020] Referring to FIG. 1, the chamber (2) may provide a processing space (200). A processing process for the substrate (100) may be performed in the processing space (200). The processing space (200) may be placed inside the chamber (2). An exhaust port (not shown) for exhausting gas from the processing space (200) may be coupled to the chamber (2). The susceptor (3) and the injection unit (4) may be placed inside the chamber (2).
[0021] Referring to FIG. 2, the processing space (200) may be divided into a first space (210), a second space (220), and a separation space (240). The first space (210), the second space (220), and the separation space (240) may correspond to a part of the processing space (200). The first space (210) and the second space (220) may be spatially separated from each other. The separation space (240) may be placed between the first space (210) and the second space (220).
[0022] The above separation space (240) can separate adjacent spaces by injecting inert gas, and more specifically, the above separation space (240) can spatially separate the first space (210) and the second space (220) by injecting inert gas into the first space (210) and the second space (220).
[0023] According to another embodiment, as illustrated in FIG. 3, the processing space (200) may be divided into a first space (210), a second space (220), a third space (230), and a separation space (240). The first space (210), the second space (220), the third space (230), and the separation space (240) may correspond to a part of the processing space. The first space (210), the second space (220), and the third space (230) may be spatially separated by the separation space (240). The separation space (240) may be placed between each of the first space (210), the second space (220), and the third space (230).
[0024] Referring to FIG. 1, the susceptor (3) can support the substrate (100). The susceptor (3) may support a single substrate (100) or multiple substrates (100). When multiple substrates (100) are supported by the susceptor (3), a processing process for multiple substrates (100) can be performed at once. The susceptor (3) can be coupled to the chamber (2). The susceptor (3) can be placed inside the chamber (2).
[0025] The susceptor (3) can rotate clockwise (CW) or counterclockwise (CCW). Additionally, during the process, the susceptor (3) can rotate clockwise (CW) and then counterclockwise (CCW). Specifically, to explain the first substrate (101) on the susceptor (3) located in the first space (210) as an example, the first substrate (101) on the susceptor (3) in the first space (210) can rotate through the separation space (240) to the second space (220) as the susceptor (3) rotates clockwise. The first substrate (101) on the susceptor (3) performs a process in the second space (220), and then, as the susceptor (3) rotates clockwise in the second space (220), the first substrate (101) can move through the separation space (240) to the first space (210). At this time, the first substrate (101) on the susceptor (3) continuously performs a process in the first space (210), and, unlike the previous direction, the susceptor (3) can rotate counter-clockwise (CCW) to continuously perform the process. Since the susceptor (30) rotates counter-clockwise (CCW), the first substrate (101) on the susceptor (3) can move through the separation space (240) to the second space (220). The first substrate (101) on the susceptor (3) can perform a process in the second space (220), and since the susceptor (3) rotates in a counter-clockwise (CCW) direction, it can rotate into the first space (210). When the above-described process is performed, the susceptor (3) can repeatedly rotate the first space (210) and the second space (220) in the order of clockwise, counter-clockwise, clockwise, and counter-clockwise. In addition, the susceptor (3) may rotate clockwise twice in succession and then rotate counter-clockwise twice in succession, or the susceptor (3) may rotate clockwise once or more than twice in succession and then rotate counter-clockwise once or more in succession.
[0026] When the susceptor (3) supports a plurality of substrates (100), the susceptor (3) may support a first substrate (101) positioned in the first space (210) and a second substrate (102) positioned in the second space (220). The first substrate (101) or the second substrate (102) may be one or more substrates. For example, when two or more substrates are positioned in the first space (210), the first substrate (101) may include a first-1 substrate (101a) and a first-2 substrate (101b). The first substrate (101) may have two or three substrates positioned in the first space (210) or the second space (220). Additionally, when two or more substrates are located in the second space (220), the second substrate (102) may include the second-1 substrate (102a) and the second-2 substrate (102b). The first substrate (101) may have two or three substrates located in the first space (210) or the second space (220).
[0027] According to another embodiment, one or more substrates (100) may be disposed in each of the first space (210) to the third space (230). For example, if one substrate is disposed in each of the first space (210) to the third space (230), the substrate processing device according to the present invention may perform the processing process with a total of three substrates (100) disposed in the susceptor (3). If two substrates (100) are disposed in each of the first space (210) to the third space (230), the substrate processing device according to the present invention may perform the processing process with a total of six substrates (100) disposed in the susceptor (3).
[0028] Referring to FIGS. 1 to 4, the injection unit (4) can inject gas toward the susceptor (3). The injection unit (4) can be connected to the supply unit (5). In this case, the injection unit (4) can inject gas supplied from the supply unit (5) toward the susceptor (3). The injection unit (4) can be placed inside the chamber (2). The injection unit (4) can be placed opposite the susceptor (3). The injection unit (4) can be placed above the susceptor (3). The processing space (200) can be placed between the injection unit (4) and the susceptor (3). The injection unit (4) can be coupled to a lid (20, shown in FIG. 4). The lid (20) can be coupled to the chamber (2) to cover the upper part of the chamber (2).
[0029] Referring to FIGS. 1, FIGS. 2, and FIGS. 4, the injection unit (4) may include a first injection unit (41), a second injection unit (42), and a third injection unit (43).
[0030] The first injection unit (41) can inject source gas into the processing space (200). In this case, the first injection unit (41) can inject source gas onto the first substrate (101) or the second substrate (102) disposed in the first space (210). The first injection unit (41) may include a plurality of first injection modules. In this case, the first injection modules may inject the same gas from each other. Additionally, the first injection modules may inject different gases from each other. Each of the first injection modules can inject source gas into the first space (210).
[0031] The second injection unit (42) can inject a reactant gas into the processing space (200). The second injection unit (42) can inject a reactant gas onto the first substrate (101) or the second substrate (102) disposed in the second space (220). In this case, the first substrate (101) or the second substrate (102) disposed in the second space (220) may be in a state where the source gas is adsorbed. Therefore, by injecting the reactant gas by the second injection unit (42), a thin film can be deposited on the first substrate (101) or the second substrate (102). The second injection unit (42) may include a plurality of second injection modules. The second injection modules may inject the same gas from each other. Additionally, the second injection modules may inject different gases. Each of the second injection modules may inject a reactant gas into the second space (220).
[0032] The third injection unit (43) can inject purge gas into the third space (230). By injecting purge gas into the third space (230), the third injection unit (43) can spatially separate the first space (210) and the second space (220). Accordingly, it is possible to prevent the gas injected into the first space (210) and the gas injected into the second space (220) from mixing with each other.
[0033] In this case, the substrate (100) supported by the susceptor (3) can sequentially pass through the first space (210), the third space (230), the second space (220), and the third space (230) by the rotation of the susceptor (3). Accordingly, an adsorption process in which a source gas is adsorbed onto the substrate (100) is performed in the first space (210), a purging process in which the source gas not used in the adsorption process is purged is performed in the third space (230), a deposition process in which a thin film is deposited by reacting the source gas adsorbed onto the substrate (100) is performed in the second space (220), and a purging process in which the reactant gas not used in the deposition process is purged is performed in the third space (230). Through this, the substrate processing device (1) can form a thin film on the substrate (100) using an atomic layer deposition (ALD) method.
[0034] Referring to FIG. 2, the separation space (240) may include a first zone (241), a second zone (242), and a third zone (243). By rotating the susceptor (3), the substrate (100) can move from the first space (210) through the first zone (241) of the separation space (240) to the second space (220). By rotating the susceptor (3), the substrate (100) can move from the second space (220) through the second zone (242) of the separation space (240) to the first space (210). Purge gas may be injected in the third zone (243) of the separation space (240). The third zone (243) may be positioned between the first zone (241) and the second zone (242).
[0035] Meanwhile, the susceptor (3) may be rotated by a rotating part (not shown). By the rotating part, the susceptor (3) may repeatedly rotate and stop. When the substrate (100) is placed in the first space (210) and the second space (220), the rotating part may stop the rotation of the susceptor (3). When the substrate (100) passes through the third space (230), the rotating part may rotate the susceptor (3) continuously without stopping. The rotating part may also adjust the rotation speed of the susceptor (3) without completely stopping the susceptor (3). In this case, when the substrate (100) passes through the first space (210) and the second space (220), the rotating part may reduce the rotation speed of the susceptor (3). When the above substrate (100) passes through the above third space (230), the rotating part can increase the rotational speed of the above susceptor (3).
[0036] Meanwhile, the substrate processing device (1) can form plasma in the first space (210), the second space (220), and the third space (230). The substrate processing device (1) can form plasma in each of the first space (210), the second space (220), and the third space (230) through the injection unit (4). Additionally, the substrate processing device (1) may form plasma in all of the first space (210), the second space (220), and the third space (230) through the injection unit (4). In this case, the injection unit (4) may be implemented with a plurality of plates. The injection unit (4) may form plasma using a plurality of plates. The injection unit (4) may be implemented to form plasma by applying a plasma power source to one of the plurality of plates and grounding another of the plurality of plates.
[0037] Hereinafter, embodiments of the thin film formation method according to the present invention will be described in detail with reference to the attached drawings. In describing embodiments of the thin film formation method according to the present invention, where it is stated that a structure is formed "on" or "below" another structure, such description should be interpreted to include not only cases where these structures are in contact with each other, but also cases where a third structure is interposed between these structures.
[0038] Referring to FIG. 5, the thin film forming method (S100) according to the present invention is for forming a thin film on the substrate (100). The thin film forming method (S100) according to the present invention can be performed using the substrate processing device (1) described above. The thin film forming method (S100) according to the present invention may include steps a) (S110) to d) (S140).
[0039] Referring to FIG. 5, step a) (S110) involves injecting the source gas multiple times onto the first substrate (101) located in the first space (210). Step a) (S110) can be achieved by the first injection unit (41) injecting the source gas multiple times onto the first substrate (101) located in the first space (210). The source gas may include the source gas, or may include the source gas and the inert gas, and the source gas may be injected first, followed by the injection of the inert gas (purge gas). When the source gas is injected into the first space (210), the inert gas may be injected into the second space (220), or the same source gas may be injected, or the reactant gas may be injected.
[0040] The above step a) (S110) may include a step of injecting a first source gas (S111) and a step of injecting a second source gas (S112). In this case, the step of injecting the first source gas (S111) is to inject the first source gas onto the first substrate (101). The step of injecting the first source gas (S111) may be achieved by the first injection unit (41) injecting a source and an inert gas onto the first substrate (101). The step of injecting the second source gas (S112) is to inject a second source gas different from the first source gas onto the first substrate (101). The step of injecting the second source gas (S112) may be achieved by the first injection unit (41) injecting an inert gas onto the first substrate (101). In this case, the step of injecting the second source gas (S112) may have a higher flow rate of inert gas than the step of injecting the first source gas (S111). Accordingly, the thin film forming method (S100) according to the present invention can inject the residual source (hereinafter referred to as 'residual source') remaining in the injection line of the first injection unit (41) together onto the first substrate (101) by injecting only inert gas in the step of injecting the second source gas (S112). Meanwhile, the inert gas may include one or more of argon (Ar), nitrogen (N2), hydrogen (H2), and helium (He). The first source gas may be a high-viscosity source gas. The high-viscosity source gas may be a gas including lanthanum (La), gadolinium (Gd), and yttrium (Y).
[0041] Accordingly, the thin film forming method (S100) according to the present invention can achieve the following effects.
[0042] First, the thin film forming method (S100) according to the present invention can prevent the source gas sprayed by the first spraying unit (41) from stagnating due to the residual source by removing the residual source using the second source gas. Accordingly, the thin film forming method (S100) according to the present invention can use the source gas having high viscosity characteristics in the processing process without dilution, thereby improving the deposition rate.
[0043] Second, the thin film forming method (S100) according to the present invention can be implemented such that, after spraying the residual source onto the substrate (100) using the second source gas, the reactant gas sprayed by the second spraying unit (42) is sprayed onto the substrate (100). Accordingly, since the thin film forming method (S100) according to the present invention can perform the processing process using the residual source, the flow rate of the source that is not used in the processing process and is lost can be reduced. Therefore, the thin film forming method (S100) according to the present invention can reduce the process cost for performing the processing process.
[0044] Third, the thin film formation method (S100) according to the present invention can perform the processing process by spraying the source onto the first substrate (101) without a purging process of purging the spray line after performing the processing process using the residual source. Accordingly, the thin film formation method (S100) according to the present invention can increase the productivity of the substrate (100) on which the processing process is performed. In this case, the thin film formation method (S100) according to the present invention can spray the residual source toward the substrate (100), and after spraying the reactant gas toward the substrate (100), immediately spray the first source gas toward the substrate (100).
[0045] Step b) (S120) involves continuously spraying the reactant gas onto the second substrate (102) located in the second space (220). Step b) (S120) can be achieved by the second spraying unit (42) continuously spraying the reactant gas onto the second substrate (102) located in the second space (220). The reactant gas sprayed through Step b) (S120) can react with a source material adsorbed on the second substrate (102) to form a thin film on the second substrate (102). In this case, through Step a) (S110) and Step b) (S120), a thin film can be formed on the second substrate (102) by an atomic layer deposition (ALD) method. Additionally, when a reactant gas is injected into the second space (220), an inert gas (purge gas) may be injected into the first space (210), or a reactant gas may be injected into the first space (210), or a source gas may be injected into the first space (210). When the source gas or the reactant gas is injected into the first space (210) or the second space (220), an inert gas (purge gas) is injected into the opposite space, the second space (220) or the first space (210), thereby preventing different gases from crossing into each space and mixing with each other.
[0046] Step c) (S130) above involves positioning the first substrate (101) in the second space (220) and positioning the second substrate (102) in the first space (210). Step c) (S130) can be performed by rotating the susceptor (3) to position the first substrate (101) located in the first space (210) into the second space (220), and at the same time, positioning the second substrate (102) located in the second space (220) into the first space (210). In this case, the thin film formation method (S100) according to the present invention may include the step of spraying purge gas into a third space (S230) disposed between the first space (S210) and the second space (S220). The step of injecting purge gas into the third space (S230) can be performed simultaneously with step c) (S130). Accordingly, the thin film forming method (S100) according to the present invention can prevent the mixing of the source gas injected into the first space (S210) and the reactant gas injected into the second space (S220) by spatially separating the first space (S210) and the second space (S220).
[0047] When the processing space (200) is partitioned into the first space (210) to the fourth space (240), the step of positioning the first substrate (101) in the second space (220) during step c) may include the step of positioning the first substrate (101) in the second space (220) after positioning it in the third space (230). The step of positioning the first substrate (101) in the second space (220) after positioning it in the third space (230) may be performed by rotating the susceptor (3) to position the first substrate (101) located in the first space (210) in the second space (220) via the third space (230). That is, in the step of positioning the first substrate (101) to the second space (220) after positioning it to the third space (230), the first substrate (101) can be moved sequentially through the first space (210), the third space (230), and the second space (220). In the step of positioning the first substrate (101) to the second space (220) after positioning it to the third space (230), plasma can be formed in the third space (230). In the step of positioning the first substrate (101) to the second space (220) after positioning it to the third space (230), plasma can be formed in the third space (230) when the first substrate (101) is positioned in the third space (230).
[0048] When the processing space (200) is partitioned into the first space (210) to the fourth space (240), the step of positioning the second substrate (101) in the first space (210) during step c) may include the step of positioning the second substrate (102) in the first space (210) after positioning it in the third space (230). The step of positioning the second substrate (102) in the first space (210) after positioning it in the third space (230) may be performed by rotating the susceptor (3) to position the second substrate (102), which is located in the second space (220), in the first space (210) via the third space (230). That is, in the step of positioning the second substrate (102) to the first space (210) after positioning it to the third space (230), the second substrate (102) can be moved sequentially through the second space (220), the third space (230), and the first space (210). In the step of positioning the second substrate (102) to the first space (210) after positioning it to the third space (230), plasma can be formed in the third space (230). In the step of positioning the second substrate (102) to the first space (210) after positioning it to the third space (230), plasma can be formed in the third space (230) when the second substrate (102) is positioned in the third space (230).
[0049] Meanwhile, if the processing space (200) is partitioned into the first space (210) to the fourth space (240), the substrate processing device (1) may include a fifth space (not shown) for spraying an inhibitor into the chamber (2). In this case, the step of positioning the first substrate (101) in the second space (220) during step c) may include the step of positioning the first substrate (101) in the second space (220) after positioning it in the fifth space. The step of positioning the first substrate (101) in the second space (220) after positioning it in the fifth space may be performed by rotating the susceptor (3) to position the first substrate (101) located in the first space (210) to the second space (220) via the fifth space. That is, in the step of positioning the first substrate (101) to the second space (220) after positioning it to the fifth space, the first substrate (101) can be moved sequentially through the first space (210), the fifth space, and the second space (220). Meanwhile, the fifth space is a space positioned between the first space (210) and the second space (220), and may correspond to a part of the processing space (200).
[0050] Step d) (S140) above involves spraying the source gas multiple times onto the second substrate (102) located in the first space (210). Step d) (S140) above can be achieved by the first spraying unit (41) spraying the source gas multiple times onto the second substrate (102) located in the first space (210).
[0051] Step e) (S150) involves continuously spraying the reactant gas onto the first substrate (101) located in the second space (220). Step e) (S150) can be achieved by the second spraying unit (42) continuously spraying the reactant gas onto the first substrate (101) located in the second space (220). The reactant gas sprayed through Step e) (S150) can react with a source material adsorbed on the first substrate (101) to form a thin film on the first substrate (101). In this case, through Step a) (S110) and Step b) (S120), a thin film can be formed on the first substrate (101) by an atomic layer deposition (ALD) method.
[0052] Thus, the thin film forming method (S100) according to the present invention can uniformly deposit the source gas on the substrate (100) having a pattern with a large aspect ratio formed thereon by spraying the source gas onto the substrate (100) multiple times. Accordingly, the thin film forming method (S100) according to the present invention can improve the quality of the substrate after the processing process is completed.
[0053] In step a) (S110) or step d) (S140), the number of times may be two or three or more times. For example, in step a) (S110), the source gas may be sprayed onto the first substrate (101) two or three or more times. When the source gas is sprayed twice in step a) (S110), the thin film forming method (S100) according to the present invention can uniformly deposit the source gas on the first substrate (101) on which a pattern with a large aspect ratio is formed. Additionally, when the source gas is sprayed three times in step a) (S110), the thin film forming method (S100) according to the present invention can deposit the source gas even more uniformly on the first substrate (101) on which a pattern with a large aspect ratio is formed. For example, in step d) (S140) above, the source gas can be sprayed onto the second substrate (102) two or three or more times.
[0054] Referring to FIGS. 1 to 7, step a) (S110) and step b) (S120) can be performed simultaneously. Accordingly, in the thin film formation method (S100) according to the present invention, a processing process for the first substrate (101) in the first space (210) and a processing process for the second substrate (102) in the second space (220) can be performed simultaneously. When the source gas is sprayed onto the first substrate (101) in step a) (S110), the reactant gas can be sprayed onto the second substrate (102) in step b) (S120). This step can be performed by injecting the source gas by the first injection unit (41) in step a) (S110), and injecting the reactant gas by the second injection unit (42) in step b) (S120).
[0055] Referring to FIGS. 1 to 7, step d) (S140) and step e) (S150) can be performed simultaneously. Accordingly, in the thin film formation method (S100) according to the present invention, a processing process for the second substrate (102) in the spatially separated first space (210) and a processing process for the first substrate (101) in the second space (220) can be performed simultaneously. When the source gas is sprayed onto the second substrate (102) in step d) (S140), the reactant gas can be sprayed onto the first substrate (101) in step e) (S150). This step can be performed by injecting the source gas by the first injection unit (41) in step d) (S140) and injecting the reactant gas by the second injection unit (42) in step e) (S150).
[0056] According to another embodiment of the present invention, a thin film forming method may be performed using the substrate processing apparatus described above, that is, a substrate processing apparatus comprising a chamber including a first space for injecting a first gas and a second space for injecting a second gas, and a susceptor located inside the chamber and supporting a first substrate and a second substrate. Then, the susceptor may be rotated in a first direction clockwise or a second direction counterclockwise, and for example, a source gas may be injected into a first substrate in the first space, and after the first substrate moves to the second space by rotating the susceptor in the first direction or the second direction, a reactant gas may be injected into the first substrate in the second space, and then the first substrate may move to the first space by rotating the susceptor again in the first direction or the second direction. At this time, the injection of the source gas or the reactant gas may be possible once or multiple times or more than twice. Through the process described above, the first substrate moves from the first space to the second space and then back to the first space, and this movement of the first substrate may be repeated in the same order.
[0057] More specifically, the thin film forming method comprises a) spraying a first gas onto a first substrate located in a first space, b) rotating a susceptor in a first direction or a second direction so that the first substrate located in the first space moves to a second space, c) spraying a second gas onto the first substrate located in the second space, and d) rotating the susceptor in the first direction or a second direction so that the first substrate located in the second space moves to the first space.
[0058] And, after step d), e) the first gas is sprayed onto the first substrate located in the first space, and f) the susceptor is rotated in the first direction or the second direction so that the first substrate located in the first space can move back to the second space.
[0059] Additionally, after step f), g) the second gas is injected onto the first substrate located in the second space, and h) the susceptor is rotated in the first direction or the second direction so that the first substrate located in the second space can be moved back to the first space.
[0060] In the embodiments described above, the first gas may be a source gas, and the second gas may be a reactant gas.
[0061] It will be obvious to those skilled in the art that the invention described above is not limited to the aforementioned embodiments and attached drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical concept of the invention.
[0062] The thin film formation method according to the above-described embodiment can be used in the manufacture of semiconductor devices, display devices, solar cells, etc.
Claims
1. A method for forming a thin film of a substrate processing apparatus comprising a chamber including a first space for injecting a source gas and a second space for injecting a reactant gas, and a susceptor located inside the chamber and supporting a first substrate and a second substrate, wherein a) a step of injecting the source gas multiple times onto the first substrate located in the first space; b) a step of continuously injecting the reactant gas onto the second substrate located in the second space; c) a step of positioning the first substrate in the second space and positioning the second substrate in the first space; d) a step of injecting the source gas multiple times onto the second substrate located in the first space; and e) A method for forming a thin film comprising the step of continuously spraying the reactant gas onto the first substrate located in the second space.
2. In Paragraph 1, A thin film formation method characterized in that the above step a) and the above step b) are performed simultaneously.
3. In Paragraph 1, A thin film forming method characterized by injecting the source gas in step a) and injecting the reactant gas in step b).
4. In Paragraph 1, A thin film forming method characterized by the injection of the reactant gas in step b) when the injection of the source gas in step a) is stopped.
5. In Paragraph 1, A thin film formation method characterized by the above steps d) and e) proceeding simultaneously.
6. In Paragraph 1, The above source gas includes the above source and an inert gas, and The above step a) is a step of injecting a first source gas; and The method includes a step of injecting a second source gas different from the first source gas after the step of injecting the first source gas, and A thin film forming method characterized in that the step of injecting the second source gas has a higher flow rate of inert gas than the step of injecting the first source gas.
7. In Paragraph 1, A thin film forming method characterized in that the plurality of times in step a) or step d) is two or three or more times.
8. In Paragraph 1, A thin film forming method characterized in that the first substrate or the second substrate is one or more substrates.
9. In Paragraph 6, A method for forming a thin film characterized in that the above-mentioned inert gas includes one or more of argon (Ar), nitrogen (N2), hydrogen (H2), and helium (He).
10. In Paragraph 6, A thin film forming method characterized in that the first source gas is a high-viscosity source gas.
11. In Paragraph 1, It includes a third space for forming plasma within the above chamber, The step of positioning the first substrate in the second space is A thin film forming method characterized by including the step of positioning the first substrate in the third space and then positioning it in the second space.
12. In Paragraph 11, It includes a third space for forming plasma within the above chamber, The step of positioning the second substrate in the second space is A thin film forming method characterized by including the step of positioning the second substrate in the third space and then positioning it in the first space.
13. In Paragraph 11 or 12, A thin film forming method characterized by the step of positioning the first substrate in the third space and then positioning it in the second space, or the step of positioning the second substrate in the third space and then positioning it in the first space, wherein plasma is formed in the third space.
14. In Paragraph 11, It includes a fifth space for injecting an inhibitor within the above chamber, and The step of positioning the first substrate in the second space is A thin film forming method characterized by including the step of positioning the first substrate in the fifth space and then positioning it in the second space.
15. A method for forming a thin film using a substrate processing apparatus comprising a chamber including a first space for injecting a first gas and a second space for injecting a second gas, and a susceptor located inside the chamber and supporting a first substrate and a second substrate, wherein a) a step of injecting a first gas onto a first substrate located in a first space; b) a step in which the susceptor rotates in a first direction or a second direction so that the first substrate located in the first space moves to the second space; c) a step of injecting a second gas onto the first substrate located in the second space; and d) A thin film forming method comprising the step of rotating the susceptor in the first direction or the second direction so that the first substrate located in the second space moves to the first space.
16. In Paragraph 15, after step d) above, e) a step of injecting the first gas onto the first substrate located in the first space; and f) a step in which the susceptor rotates in the first direction or the second direction so that the first substrate located in the first space moves to the second space; a thin film forming method comprising.
17. In Paragraph 16, after step f) above, g) a step of injecting the second gas onto the first substrate located in the second space; and h) a step in which the susceptor rotates in the first direction or the second direction so that the first substrate located in the second space moves to the first space; a thin film forming method comprising.