Support, assembly and cleaning apparatus for cleaning of semiconductor material

Abstract

This disclosure provides a support, assembly, and cleaning apparatus for cleaning semiconductor materials. The support includes a main body and a support portion connected to the main body. The support portion has a first end away from the main body and a second end close to the main body, and the support portion has a cross-section that gradually converges from the second end to the first end. This support, through precise geometric alteration, fundamentally changes the physical environment of the solid-liquid interface during the cleaning process, disrupting the stable retention mechanism of bubbles that lead to defects.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to supports, components, and cleaning equipment for cleaning semiconductor materials. Background Technology

[0002] In the semiconductor manufacturing supply chain, semiconductor material components such as silicon and silicon carbide, including electrodes and focusing rings, must undergo thorough wet cleaning after precision machining before being delivered to wafer fabrication plants for use.

[0003] Related technologies typically employ planar stepped fixtures to support such semiconductor material components. However, this support method has revealed significant drawbacks in actual cleaning processes: on the one hand, permanent edge marks often appear on the surface of the cleaned semiconductor material components, affecting product yield; on the other hand, the edges of the components are prone to mechanical scratches such as chipping during handling or handling.

[0004] Therefore, there is an urgent need in this field for a technical solution that can effectively solve the problems of edge markings and mechanical damage in semiconductor material components. Summary of the Invention

[0005] This disclosure provides supports, components, and cleaning equipment for cleaning semiconductor materials. Through structural and material improvements, it addresses the risks of edge marking defects and mechanical scratches caused by inappropriate existing fixture design and material properties during immersion cleaning of semiconductor materials, thereby significantly improving the cleaning quality and yield of semiconductor etched components.

[0006] The technical solution of this disclosure embodiment is implemented as follows: In a first aspect, embodiments of this disclosure provide a support for cleaning semiconductor materials. The support includes a main body and a support portion connected to the main body. The support portion has a first end away from the main body and a second end of the main body, and the support portion has a cross section that gradually converges from the second end to the first end.

[0007] In a second aspect, embodiments of this disclosure provide an assembly for cleaning semiconductor materials. The assembly may include: a mounting base and a plurality of supports for cleaning semiconductor materials according to a first aspect, wherein the plurality of supports for cleaning semiconductor materials are spaced apart on the mounting base, and the first ends of each of the plurality of supports for cleaning semiconductor materials collectively define a cleaning space for accommodating the semiconductor material, thereby limiting the displacement of the semiconductor material relative to the assembly.

[0008] Thirdly, embodiments of this disclosure provide a cleaning apparatus that includes components for cleaning semiconductor materials according to the second aspect.

[0009] This disclosure provides a support, assembly, and cleaning equipment for cleaning semiconductor materials. The support portion of the support has a cross-section that gradually converges from a second end near the main body to a first end away from the main body. Compared to planar stepped fixtures of the related art, this convergent cross-section design fundamentally transforms the contact mode from surface contact to point or line contact, greatly compressing the contact area and creating a geometry conducive to fluid bypass. Based on this, by disrupting the stable residence mechanism of bubbles at the solid-liquid interface, the acoustic and chemical shielding effects commonly found in superhydrophobic material fixtures are completely eliminated, thereby eradicating edge-marking defects in semiconductor materials caused by local chemical gradients. Simultaneously, the minimized contact area and the tapered structure effectively reduce the risk of mechanical scratches on semiconductor materials during placement and removal. Attached Figure Description

[0010] Figure 1 This is a schematic three-dimensional diagram of a fixture for related technologies.

[0011] Figure 2 This is a schematic three-dimensional diagram illustrating the use of a fixture related to this technology.

[0012] Figure 3 A schematic perspective view of a support member provided for an embodiment of this disclosure.

[0013] Figure 4 A schematic perspective view of a component for cleaning semiconductor materials provided in an embodiment of this disclosure during use.

[0014] Figure 5 A schematic side view of an assembly for cleaning semiconductor materials provided in an embodiment of this disclosure during use.

[0015] Figure 6 for Figure 4 The side view of the support member is shown.

[0016] Figure 7 A schematic perspective view of a component for cleaning semiconductor materials provided for embodiments of this disclosure.

[0017] Figure 8 A top view of a cleaning apparatus provided for an embodiment of this disclosure. Detailed Implementation

[0018] The present disclosure will now be described in detail with reference to the accompanying drawings and exemplary embodiments. It should be noted that the following detailed description of the present disclosure is for illustrative purposes only and is not intended to limit the scope of the disclosure.

[0019] The term "semiconductor material" or "semiconductor material component" mentioned in this disclosure specifically refers to consumables used in plasma etching equipment or other semiconductor processing equipment, such as upper electrodes, focusing rings, etc. For ease of understanding and description, the term "electrode" will be used as an example to represent the various semiconductor material components described above.

[0020] Before detailing the technical solutions proposed in the embodiments of this disclosure, we first conduct an in-depth analysis of the underlying technical mechanisms behind edge marks and mechanical scratches mentioned in the background art.

[0021] Research has found that, in the relevant technologies, see [link to relevant documentation]. Figure 1 and Figure 2 The fixture 1 used for lateral electrode cleaning is typically a one-piece block structure and includes multiple planar steps. These fixtures 1 are generally made of superhydrophobic materials commonly used in the semiconductor industry. Research has shown that the combination of the surface contact characteristics of the planar stepped structure and the superhydrophobic material directly leads to cleaning defects in immersion cleaning environments. The specific mechanism is as follows.

[0022] From the premise that the defect occurs, such as Figure 2 As shown, the clamp 1 and electrode E in the related technology are in surface contact. When the electrode E, made of silicon (Si) or silicon carbide (SiC), is pressed onto the planar step of the superhydrophobic clamp 1 and immersed in the cleaning solution, from a microscopic perspective, there will inevitably be tiny depressions and gaps between the two solid surfaces. These gaps will trap and retain gas, thereby forming one or more large and dynamically stable bubble films. These bubble films will produce an airtight chamber effect, making the corresponding area a physically isolated zone that the cleaning solution cannot reach.

[0023] Further analysis reveals that the core driving force behind the defects stems from the dual shielding effect and concentration gradient provided by the stable bubble film. During the cleaning process, this bubble film maximizes shielding over the contact area between clamp 1 and electrode E. From an acoustic perspective, the bubble film effectively hinders the propagation of sound waves in the liquid. The cavitation impact energy generated by megasonic waves or ultrasonic waves cannot be uniformly applied to the surface of electrode E covered by the bubble film, resulting in a significant reduction in the removal efficiency of particulate matter and residues in this area. From a chemical perspective, the bubble film impedes the free diffusion and penetration of reactants in the cleaning solution into the covered area. Commonly used cleaning solutions include SC-1 or SC-2 solutions. These solutions typically operate at high temperatures around 80°C, and the bubble film also prevents the timely removal of reaction byproducts.

[0024] The aforementioned defects ultimately result in permanent edge markings on the surface of electrode E. Under the influence of the double shielding effect, the area covered by the bubbles reacts more slowly, while the uncovered area is thoroughly cleaned and reacts more quickly, creating a significant chemical gradient between the two areas. This differential reaction rate is equivalent to uneven corrosion or etching on the surface of electrode E, ultimately "carving" a permanent step height difference at the edge of electrode E—the so-called edge markings.

[0025] Based on the above mechanism analysis, the support member 200 provided in this embodiment solves this technical problem by changing the surface contact design in the related technology, thereby breaking the airtight chamber effect and the double shielding mechanism from both structural and material aspects.

[0026] Specifically, see Figure 3 Some embodiments of this disclosure provide a support 200 for cleaning semiconductor materials. This support 200 serves as a basic functional unit of a component 100 for cleaning semiconductor materials. Through precise geometric alterations, it fundamentally changes the physical environment of the solid-liquid interface during the cleaning process, disrupting the stable retention mechanism of bubbles that lead to defects.

[0027] The support member 200 includes a main body portion 210 and a support portion 220, with the support portion 220 connected to the main body portion 210. For example, the support portion 220 may be integrally formed with the main body portion 210, or it may be formed separately and then bonded together using an adhesive or the like. The following example, using an electrode as a semiconductor material component, will be described in further detail.

[0028] See Figure 4 The main body 210 serves as the reference and mounting part of the support member 200, providing a stable connection interface so that the support member 200 can be reliably installed onto the mounting base 110 of the assembly 100. Furthermore, the main body 210 enables the support member 200 to maintain precise geometric positioning within the entire assembly 100, ensuring that all contact points with the electrode E fall within a preset accuracy range when the support member 200 is carrying the electrode E, thus laying the foundation for subsequent stable cleaning.

[0029] See Figure 3 The support portion 220 is the actuating part of the support member 200 that directly contacts the electrode E, and has a first end 223 and a second end 224. The second end 224 is close to and connected to the main body portion 210, which is equivalent to the base of the support, providing a stable support foundation for the support portion 220. The first end 223 is away from the main body portion 210 and is the end that realizes the support function, used to abut against the edge of the electrode E.

[0030] like Figure 3As shown, the support portion 220 extends from the wider second end 224 connecting the main body portion 210 to the narrower first end 223 used to abut the electrode E, and as a whole presents a geometric shape that gradually decreases in cross-sectional size from wide to narrow. This gradually decreasing geometric shape is the “gradually converging cross section” of the support portion 220.

[0031] The gradually converging cross-section specifically refers to the cross-sectional dimensions or area of ​​the support portion 220, which continuously decreases along the direction extending from the second end 224 to the first end 223, forming a narrowing geometric shape. This minimizes the contact area between the support portion 220 and the electrode E, achieving a high-curvature contact and completely eliminating the planar stepped structure of the clamp 1 in related technologies from a geometric perspective. This convergent shape, at the physical level, provides the necessary prerequisite for subsequently achieving high surface curvature and fluid bypass effects.

[0032] In practical applications, the various structural features of the support component 200 functionally support each other, working together to achieve the overall technical effect of removing air bubbles and preventing scratches. From the perspective of contact area optimization, the main body 210 provides a stable foundation for the support component 220 through precise positioning. The support component 220, in turn, achieves a significant reduction in the contact area with the electrode E through its gradually converging cross-section, fundamentally eliminating the physical basis for the airtight chamber effect in related technologies, thus depriving air bubbles of a stable space to exist.

[0033] Furthermore, the gradually converging cross-section can also bring about a fluid bypass effect. Taking the common V-shaped cross-section as an example, an open and wide fluid space is naturally formed between the inclined surfaces on both sides and the edge of the electrode E being contacted. This space ensures that the cleaning fluid can freely convection and diffuse in the critical cleaning area at the edge of the electrode E. Even if tiny bubbles are generated during the cleaning process, they can be quickly carried away from the contact point by the acoustic flow driven by the ultrasound, further reducing the impact of bubbles on the cleaning process.

[0034] In addition, the support portion 220 can be made of high-performance engineering plastics, which have appropriate flexibility. When the electrode E comes into contact with the first end 223 of the support portion 220 by its own weight or the thrust of an external robotic arm, the flexibility of the material can provide the necessary buffering effect, effectively absorbing and dispersing the local stress generated during contact, and preventing the electrode E from being damaged due to stress concentration. This is also a key structural support for achieving non-damaging contact with the electrode E.

[0035] Overall, according to some embodiments of this disclosure, the support member 200 is composed of a main body 210 and a support portion 220 having a gradually converging cross section, wherein the first end 223 of the support portion 220 with the converging cross section is directly used to abut the edge of the electrode E. This structural arrangement can minimize the contact area between the support portion 220 and the electrode E on the one hand, and maximize the surface curvature near the contact point on the other hand. Studies have found that these two aspects work together to prevent bubbles from obtaining the low-energy state environment required for stable residence at the solid-liquid interface between the support portion 220 and the electrode E. Therefore, under high-temperature cleaning environments such as above 80°C and ultrasonic disturbances, bubbles are prone to detach from the interface and cannot form a stable shielding layer.

[0036] As the bubbles dissipate, the cleaning fluid and ultrasonic energy act uniformly on the edge region of electrode E, completely eliminating the dual effects of acoustic and chemical shielding present in related technologies. This uniform action ensures that the chemical reaction rate remains consistent throughout the surface of electrode E, completely eliminating the chemical gradient and differential etching phenomena that would otherwise cause permanent edge marks, thus eradicating the edge marks. Although the gradually converging cross-section allows the tip of support 220, i.e., the first end 223, to achieve point contact, the geometric parameters of the tip, such as the radius of curvature, can be strictly limited (specific parameters will be detailed below), effectively preventing excessively concentrated local pressure on the edge of electrode E from the sharp structure. The flexibility of the support 220 material itself further ensures non-damaging contact with electrode E, significantly improving scratch resistance and ensuring that electrode E does not suffer new damage during the cleaning process.

[0037] The key geometric features, parameters, and materials of the support 200 are further defined below to ensure reliability and optimal performance in a real semiconductor cleaning environment.

[0038] In some embodiments of this disclosure, see Figure 3 and Figure 5 Based on the aforementioned gradually converging cross section, the first end 223 of the support portion 220 is provided with a ridge 225. The ridge 225 can extend in a direction away from the main body portion 210, and the ridge 225 is used to abut against the edge of the electrode E.

[0039] From a structural perspective, the ridge structure is an exemplary design that embodies the contact requirement of "minimizing contact area." At the physical level, the ridge structure reduces the possibility of two-dimensional surface contact between the electrode edge and the support 200, instead achieving a physical mechanism of disrupting bubble stability through high curvature. In some examples, the ridge 225 can extend along the tangent direction of the electrode E's edge. This provides stable support for the electrode E, improving the geometric stability of the support, while always minimizing the contact area, laying the structural foundation for subsequent bubble elimination.

[0040] like Figure 6 As shown, the ridge 225 may have a radius of curvature R at its tip. In some examples, the radius of curvature R may range from 0.1 mm to 3 mm.

[0041] Research and experiments show that if the radius of curvature R exceeds 3 mm, exceeding the upper limit of the aforementioned range, a distinct "platform" structure will form at the tip of the ridge. This structure provides a stable space for bubbles to remain, causing the debubbling effect to fail. Therefore, the radius of curvature R must be controlled at 3 mm or less to ensure the debubbling function. If the radius of curvature R is less than or equal to 0.1 mm, below the lower limit of the aforementioned range, excessive local pressure concentration will occur at the contact point between the ridge 225 and the electrode E. This will cause excessively high pressure under the action of ultrasonic vibration, easily leading to scratches or damage to the electrode edge. Therefore, the radius of curvature R must be greater than 0.1 mm to avoid mechanical damage.

[0042] In a further embodiment, by controlling the radius of curvature R between 0.1 mm and 1 mm, the curvature of the contact surface can be maximized, which can maximize the adhesion energy state of bubbles on the surface, ensuring that the bubbles can be instantly detached under the fluid disturbance of the cleaning fluid, and further enhancing the debubbling effect.

[0043] In some embodiments of this disclosure, the support portion 220 has a V-shaped cross-section formed by a first inclined surface 226 and a second inclined surface 227, see [link to relevant documentation]. Figure 6 In this case, the included angle θ between the two inclined planes directly affects the hydrodynamic characteristics and bubble containment space during the cleaning process. In some embodiments, this included angle is limited to the range of 20 degrees to 100 degrees.

[0044] From the perspective of the parameter boundary mechanism, the included angle θ needs to be controlled to be less than or equal to 100 degrees. This is based on fluid dynamics constraints: if the included angle is greater than 100 degrees, the distance between the inclined surface of the support 200 and the edge of the electrode E being contacted will be too close, thus forming a narrow gap. This gap will become a fluid stagnation zone. This area is not only unfavorable for the rapid flow of cleaning fluid, but also provides space for bubbles to be accommodated and stabilized, hindering bubble elimination. In some examples, the included angle θ is set to around 30 degrees. A narrower 30-degree included angle can maximize the formation of an open space between the inclined surface and the electrode edge. This space ensures that the cleaning fluid can freely convection and diffuse during the cleaning process, allowing bubbles to be immediately carried away by the flowing cleaning fluid after they are generated, further reducing the possibility of bubble retention.

[0045] To suppress bubble nucleation from a chemical perspective, in some embodiments of this disclosure, a dual "structure-chemical" debubbling protection is formed with the ridge structure through material selection and surface modification, wherein at least a portion of the surface of the support portion 220 is configured as a hydrophilic surface.

[0046] The core function of hydrophilic surfaces is to significantly reduce the critical energy required for bubble nucleation by lowering the water contact angle at the solid-liquid interface, thereby greatly reducing the adhesion of bubbles to the solid-liquid interface. For example, sulfonated polyether ether ketone (sPEEK) materials can be used to effectively inhibit bubble adhesion.

[0047] In practical applications, hydrophilic surfaces can be achieved in several ways: either by directly selecting a hydrophilic bulk material (such as sPEEK); or by surface modification treatments, such as plasma treatment or chemical grafting polymerization, to form hydrophilic polymer chains on the material surface; or by using film coating to form a hydrophilic coating on the surface of a hydrophobic substrate.

[0048] Because the cleaning environment for semiconductor materials is typically harsh, involving strong acids, strong alkalis, strong oxidants, and high temperatures ranging from 80°C to 130°C, the material of the support portion 220 must possess excellent environmental compatibility. For example, the material of the support portion 220 may include sulfonated polyether ether ketone (sPEEK) or polyvinylidene fluoride-hexafluoropropylene copolymer (PVDF-HFP). Sulfonated polyether ether ketone not only inherits the excellent chemical stability and high-temperature resistance of polyether ether ketone materials, such as being usable for extended periods in environments above 177°C, but also acquires hydrophilicity through sulfonation treatment, thus meeting the requirements for use in harsh cleaning environments.

[0049] According to some embodiments of this disclosure, the main body 210 is also provided with a through hole 212, see [link to relevant documentation]. Figure 3 The through-hole 212 is structurally designed as, for example, an elongated oval hole or a long slot. This shape provides the necessary adjustment margin for the position adjustment of the support member 200 on the main body 210. The through-hole 212 not only facilitates fluid flow but also enables multi-position fixation of the support member 200 relative to the electrode.

[0050] Specifically, such as Figure 4 As shown, the through hole 212 can be used with fasteners such as bolts and pins on the mounting base 110 of the assembly 100, allowing the support member 200 to be adjusted laterally in the extension direction of the elongated hole. By changing the spacing between multiple support members 200, the assembly 100 can flexibly adapt to electrodes E of different diameters or sizes, and reliably limit the displacement of the electrodes E, significantly improving the compatibility and flexibility of the equipment with different product specifications.

[0051] As a through-hole structure, the through-hole 212 can also effectively improve the flow and rinsing effect of the cleaning fluid inside the support 200 body. During the cleaning process, the cleaning fluid can flow fully through the body 210 through the through-hole 212, preventing the cleaning fluid or reaction by-products from remaining in the internal cavity of the fixture. If these residues are not removed in time, they can easily become a secondary source of contamination on the electrode surface during subsequent rinsing and drying. Therefore, the design of the through-hole 212 also eliminates this risk from the source, further ensuring the surface cleanliness of the electrode after cleaning.

[0052] See Figure 4 and Figure 7 Some embodiments of this disclosure also provide an assembly 100 for cleaning semiconductor materials. This assembly 100 is based on a mounting base 110 and includes multiple support members 200. Figure 7 In the example shown, these support members 200 all retain core structures such as ridges 225, defined radii of curvature R and included angle θ, and hydrophilic surfaces. Multiple support members 200 are fixed on the mounting base 110 at preset intervals to ensure the positional accuracy and coordination of each support member 200.

[0053] During the operation of component 100, the first ends 223 of multiple supports 200 can collectively define a cleaning space adapted to a semiconductor material, such as electrode E, to limit the displacement of the semiconductor material relative to component 100. The following explanation continues with the example of an electrode as the semiconductor material.

[0054] In actual cleaning scenarios, electrode E is inevitably subjected to fluid impact from the circulating cleaning fluid and the acoustic thrust during ultrasonic cleaning. Without effective restraint, it is prone to drifting, flipping, or even colliding with the cleaning tank wall, which not only disrupts the uniformity of cleaning but may also cause mechanical damage to the electrode edges. The component 100, through the coordinated restraint of multiple support members 200, can stably constrain electrode E within a preset cleaning space, ensuring it maintains its planar positioning at all times. This guarantees the continuous and stable cleaning operation and provides reliable mechanical safety protection for electrode E.

[0055] In the specific arrangement of component 100, the number of multiple support members 200 can be three, four, five, etc. Figure 7 In the example shown, component 100 includes four support members 200, which are arranged in a rectangular array at the four corners of mounting base 110. This arrangement balances structural stability with ease of operation.

[0056] From a structural stability perspective, rectangular four-point support can create a uniform distribution of supporting force on circular or square electrodes E, preventing electrode displacement due to uneven support points. For example, for large-diameter electrodes (such as 250mm circular electrodes), four-point support can effectively distribute the electrode weight and prevent excessive local stress.

[0057] From an operational convenience perspective, the arrangement of the four corners provides ample space for the robotic arm's automated loading and unloading. The robotic arm can complete the electrode picking and placing actions without having to avoid the support components, adapting to the automated production needs of the semiconductor manufacturing industry. Whether electrode E is a circle with a diameter ranging from 150mm to 250mm or a square with a side length ranging from 100mm to 200mm, simply adjusting the 200mm spacing of the four support components can precisely adapt to the electrode size, ensuring consistent support and limiting effects.

[0058] Based on the aforementioned component 100 for cleaning semiconductor materials, see [link to component 100]. Figure 8 This disclosure further provides a cleaning device 300, in which component 100 is integrated as a core functional component. From a practical application perspective, this cleaning device 300 can operate stably in typical semiconductor wet cleaning processes. Whether in strong acid solutions such as hydrochloric acid and sulfuric acid, strong alkali solutions such as ammonia and sodium hydroxide, corrosive environments with strong oxidants, or high-temperature cleaning conditions such as around 80°C, the cleaning device 300 maintains stable performance. This is because the sulfonated polyether ether ketone (sPEEK) and polyvinylidene fluoride-hexafluoropropylene copolymer (PVDF-HFP) materials used in its support component 200 possess excellent chemical stability and high-temperature resistance. Furthermore, the overall structure of component 100 is ultra-precision machined, ensuring that corrosion or thermal deformation will not affect positioning accuracy under harsh environments, thus guaranteeing the stability of the cleaning effect.

[0059] Furthermore, the cleaning equipment 300, which integrates component 100, eliminates the need for additional complex positioning structures and can directly adapt to semiconductor material components of different specifications, such as electrode E, thus shortening the equipment development cycle and reducing production costs. The advantages of the cleaning equipment 300, such as the absence of edge marks and scratch resistance, all rely on the aforementioned design of component 100, effectively ensuring cleaning yield and meeting the reliability and compatibility requirements of mass production.

[0060] The support 200, component 100, and cleaning equipment 300 for semiconductor material cleaning provided in this disclosure, through the synergistic optimization of structure, parameters, and functions, specifically overcome the core technical pain points of existing semiconductor material cleaning, while forming comprehensive advantages in terms of equipment compatibility and long-term stability, thus constituting a comprehensive and reliable technical solution.

[0061] In eliminating edge markings, this embodiment breaks through the limitations of existing technologies from both physical structure and chemical properties: the ridge 225 of the support 200 and its gradually converging cross-section optimize traditional surface contact into a smaller area of ​​contact, significantly compressing the space for bubble retention; combined with the hydrophilic surface design of the support 220, the conditions for bubble nucleation and stable adhesion are reduced at the source. This synergistic effect ensures that ultrasonic energy is uniformly applied to the semiconductor material surface, the cleaning fluid flows freely and reacts fully, completely eliminating the chemical gradient that leads to edge markings, and achieving a fundamental solution to the marking defects.

[0062] In terms of avoiding mechanical scratches, the support 200 avoids excessive local pressure concentration at the contact point by reasonably limiting the curvature radius of the top of the ridge 225; at the same time, based on the flexible corrosion-resistant material selected for the support 220, it provides effective buffering during the vibration of picking up, placing and cleaning, absorbing impact and local stress, achieving non-damaging contact with semiconductor materials, and significantly reducing the risk of scratches.

[0063] In terms of high precision and robustness, the quantitative design of the core geometric parameters of the support component 200 and the ultra-precision manufacturing process ensure the structural consistency and positioning accuracy of mass production; while the hydrophilicity, high temperature resistance and strong chemical stability of the selected materials enable the support component 200, component 100 and cleaning equipment 300 to withstand the harsh environment of semiconductor cleaning, meeting the requirements of ultra-precision manufacturing for long-term reliability.

[0064] In terms of improving equipment adaptability, the through hole 212 of the main body 210 provides lateral displacement adjustment margin for the support member 200. By adjusting the spacing of the support member, it can adapt to semiconductor material components of different specifications without the need to design special fixtures, which greatly reduces equipment adaptation costs. It is especially suitable for the rapid specification switching needs in multi-variety, small-batch production scenarios, thereby improving production efficiency.

[0065] In summary, this solution not only precisely addresses the core shortcomings of existing cleaning processes, but also achieves multi-faceted optimization in terms of practicality, stability, and industrial layout. It provides a reliable and economical solution for the precision cleaning of semiconductor material components, and can be adapted to the needs of large-scale semiconductor manufacturing in the long term.

[0066] It should be noted that the technical solutions described in the embodiments of this disclosure can be combined arbitrarily without conflict.

[0067] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A support member for cleaning semiconductor materials, characterized in that, The support member includes: Main body; Support portion, the support portion being connected to the main body portion, The support portion has a first end away from the main body and a second end close to the main body. The support portion has a cross section that gradually converges from the second end to the first end.

2. The support member for cleaning semiconductor materials according to claim 1, characterized in that, The first end is provided with a ridge that extends in a direction away from the main body and is used to abut against the edge of the semiconductor material.

3. The support member for cleaning semiconductor materials according to claim 2, characterized in that, The radius of curvature at the tip of the ridge ranges from 0.1 mm to 3 mm.

4. The support member for cleaning semiconductor materials according to claim 3, characterized in that, The radius of curvature is less than or equal to 1 millimeter.

5. The support member for cleaning semiconductor materials according to claim 1, characterized in that, The support portion includes a first inclined surface and a second inclined surface, the first inclined surface and the second inclined surface intersect and converge in a direction away from the main body portion, and the included angle between the first inclined surface and the second inclined surface is in the range of 20 degrees to 100 degrees.

6. The support member for cleaning semiconductor materials according to claim 5, characterized in that, The angle between the first inclined plane and the second inclined plane is 30 degrees.

7. The support for cleaning semiconductor materials according to any one of claims 1 to 6, characterized in that, At least a portion of the surface of the support is a hydrophilic surface.

8. The support member for cleaning semiconductor materials according to claim 7, characterized in that, The material of the support includes sulfonated polyether ether ketone or polyvinylidene fluoride-hexafluoropropylene copolymer.

9. The support member for cleaning semiconductor materials according to claim 1, characterized in that, The main body has through holes, which are configured to fix the support member relative to the semiconductor material at different positions.

10. A component for cleaning semiconductor materials, characterized in that, The components include: Mounting base; and A plurality of supports for cleaning semiconductor materials according to any one of claims 1 to 9, wherein the plurality of supports for cleaning semiconductor materials are spaced apart on the mounting base; The first ends of each of the plurality of supports for cleaning semiconductor materials collectively define a cleaning space for accommodating the semiconductor materials, thereby limiting the displacement of the semiconductor materials relative to the assembly.

11. The assembly for cleaning semiconductor materials according to claim 10, characterized in that, The number of the plurality of supports for cleaning semiconductor materials is four, and the four supports for cleaning semiconductor materials are arranged in a rectangular array at the four corners of the mounting base.

12. A cleaning device, characterized in that, Includes the components for cleaning semiconductor materials as described in claim 10 or 11.

Images