Injector apparatus, semiconductor processing system, and method of depositing a layer of material to a workpiece

Abstract

An injector apparatus includes an injector holder, a reactor flange, a coupling member, a connector body, and at least one protrusion. The injector holder includes an injector collar having a first injector collar end, a second injector collar end, and an injector rim coupled to the first injector collar end. The injector rim defines an injection aperture. The reactor flange includes a tube member having a first tube member end, a second tube member end, and a reactor rim coupled to the first tube member end. The reactor rim defines a reactor aperture. The coupling member fluidically couples the reactor flange to the injector holder and defines a precursor aperture. The connector body mechanically couples the injector holder to the reactor flange. The protrusion can include an injector protrusion and a reactor protrusion. A semiconductor processing system and a material layer deposition method including the injector apparatus are also described.

Description

Technical Field

[0001] This disclosure generally relates to gaskets, and more specifically to gaskets for depositing material layers onto workpieces. Background Technology

[0002] Gaskets are typically used to fill the space between two or more surfaces and are generally designed to prevent leakage when compressed. Gaskets can be made of rubber, metal, or polymer materials and come in a variety of sizes and shapes. In the context of semiconductor device manufacturing, gaskets are often used to prevent leakage from a container holding chemicals into the tool into which the chemicals will be introduced. In semiconductor device manufacturing, gaskets are typically O-ring shaped and made of materials suitable for a range of chemical properties, temperatures, and pressures. O-rings are commonly used to seal the connection between two surfaces, such as between a chemical container and a supply conduit used to introduce chemicals into semiconductor device manufacturing tools.

[0003] Such methods and systems are generally considered suitable for their intended purpose. However, there remains a need in the art for improved gasket material selection, semiconductor processing systems that include gasket material selection, and material deposition methods. This disclosure provides a solution to this need. Summary of the Invention

[0004] An injector device is provided. The injector device includes an injector retainer, an injector, a reactor flange, a coupling member, a connector body, and at least one of an injector protrusion and a reactor protrusion. The injector retainer includes an injector collar having a first injector collar end and a second injector collar end, and an injector edge coupled to the first injector collar end. The injector edge further defines an injection orifice. The injector is slidably received in the second injector collar end. The reactor flange includes a tubular member having a first tubular member end and a second tubular member end, and a reactor edge coupled to the first tubular member end. The reactor edge further defines a reactor orifice. The coupling member fluidly couples the reactor flange to the injector retainer and defines a precursor orifice. The connector body is configured to mechanically couple the injector retainer to the reactor flange. The injector device includes at least one of an injector protrusion and a reactor protrusion. The injector protrusion extends from the injector edge and surrounds the injection orifice. The reactor protrusion extends from the reactor edge and surrounds the reactor orifice.

[0005] In addition to one or more of the features described above, or as an alternative, other examples of injector devices may include injector protrusions and reactor protrusions.

[0006] In addition to one or more of the features described above, or as an alternative, another example of the injector device may include: an injector edge further defining a plurality of longitudinal holes radially outward of the injector protrusion. A reactor edge may define a plurality of longitudinal recesses radially outward of the reactor protrusion. A connector body may be disposed in the injector edge, slidably received by the plurality of longitudinal holes, and coupled to the plurality of longitudinal recesses.

[0007] In addition to one or more of the features described above, or as an alternative, another example of the injector device may include: an injector edge further defining a plurality of longitudinal recesses radially outward of the injector protrusion. A reactor edge may define a plurality of longitudinal holes radially outward of the reactor protrusion. A connector body may be disposed in the reactor edge, slidably received by the plurality of longitudinal holes, and engaged with the plurality of longitudinal recesses.

[0008] In addition to one or more of the features described above, or as an alternative, other examples of the injector device may include: the injector retainer comprising or being formed of a refractory material, and the reactor flange comprising or being formed of a refractory material.

[0009] In addition to one or more of the features described above, or as an alternative, other examples of the injector device may include: the connecting member comprising or being formed of a stretchable material.

[0010] In addition to one or more of the features described above, or as an alternative, other examples of the injector device may include: a connector body being one of a plurality of connector bodies, and comprising or being formed of a refractory material.

[0011] An injector retainer is provided. The injector retainer includes an injector collar, an injector edge, and an injector protrusion. The injector collar also includes a first injector collar end and a second injector collar end. The injector edge is coupled to the first injector collar end and defines an injection orifice. The injector protrusion extends from the injector edge and surrounds the injection orifice.

[0012] In addition to one or more of the features described above, or as an alternative, another example of an injector holder may include an injector that is slidably received by a second injector collar end of the injector holder.

[0013] In addition to one or more of the features described above, or as an alternative, another example of an injector retainer may include a plurality of longitudinal holes defined at the injector edge radially outward of the injector protrusion.

[0014] In addition to one or more of the features described above, or as an alternative, another example of an injector retainer may include a plurality of longitudinal recesses defined at the radially outer side of the injector protrusion by the injector edge.

[0015] In addition to one or more of the features described above, or as an alternative, other examples of injector holders may include: the injector holder comprising or being formed of a refractory material.

[0016] A reactor flange is provided. The reactor flange includes a tube member, a reactor edge, and a reactor protrusion. The tube member also includes a first tube member end and a second tube member end. The reactor edge is coupled to the first tube member end of the tube member and defines a reactor orifice. The reactor protrusion extends from the reactor edge and surrounds the reactor orifice.

[0017] In addition to one or more of the features described above, or as an alternative, another example of a reactor flange may include a precursor source fluidly coupled to the end of a second tubular component of the reactor flange.

[0018] In addition to one or more of the features described above, or as an alternative, other examples of reactor flanges may include: the reactor edge is further defined by a plurality of longitudinal recesses radially outward of the reactor protrusion.

[0019] In addition to one or more of the features described above, or as an alternative, other examples of reactor flanges may include a plurality of longitudinal holes that define the reactor edge radially outward of the reactor protrusion.

[0020] In addition to one or more of the features described above, or as an alternative, other examples of reactor flanges may include: reactor flanges comprising or formed of refractory material.

[0021] A semiconductor processing system is provided. The semiconductor processing system includes an injector device, a precursor source, a chamber body, an exhaust source, a substrate support, a workpiece, and a controller as described above. The precursor source is fluidly coupled to a second tube end of the injector device. The chamber body includes a hollow interior. The exhaust source is fluidly coupled to the chamber body and, through the chamber body, to the precursor source. The substrate support is positioned within the hollow interior of the chamber body, and the workpiece is supported on the substrate support. The controller is operatively connected to the precursor source, configured to communicate with the precursor source, and responsive to instructions recorded in a memory to deposit a material layer onto the workpiece.

[0022] A method for depositing a material layer is provided. The method includes: placing a workpiece inside a chamber body in a semiconductor processing system including an injector device as described above; heating the workpiece to a predetermined material layer deposition temperature; exposing the workpiece to a material layer precursor; and depositing a material layer onto the workpiece using the material layer precursor.

[0023] In addition to one or more of the features described above, or as an alternative, another example of a material layer deposition method may include placing a substrate support inside a chamber body, wherein a workpiece is disposed on the substrate support and the workpiece is a substrate.

[0024] This invention is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the following detailed description of exemplary embodiments of this disclosure. This invention is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Attached Figure Description

[0025] These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than limit the invention.

[0026] Figure 1 This is a schematic diagram of a semiconductor processing system according to the present disclosure, showing an injector device positioned within a chamber arrangement for depositing a material layer onto a substrate;

[0027] Figure 2 It is based on the example of this disclosure. Figure 1 A longitudinal cross-sectional view of a portion of a semiconductor processing system, showing an injector device coupled to an injector and a precursor source;

[0028] Figure 3 and Figure 4 It is based on the example of this disclosure. Figure 1 The longitudinal sectional view and exploded view of the injector device show the components of the injector device;

[0029] Figure 5 and Figure 6 It is based on the example of this disclosure. Figure 1 Partial cross-sectional view and exploded view of the injector device, showing the components of the injector device;

[0030] Figure 7 This is a block diagram of a method for depositing a material layer onto a workpiece according to the present disclosure, illustrating the operation of the method according to illustrative and non-limiting examples.

[0031] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure. Detailed Implementation

[0032] Reference will now be made to the accompanying drawings, wherein the same reference numerals identify similar structural features or aspects of the subject matter. For purposes of explanation and illustration, and not limitation, Figure 1 A partial view is shown of an example of a chamber arrangement including an injector device according to this disclosure, and is generally indicated by reference numeral 100. Figure 2-7 The present disclosure provides injector devices, semiconductor processing systems including injector devices, and chamber arrangements, as well as methods or other aspects thereof for depositing material layers onto a substrate using injector devices, as will be described. The devices, systems, and methods of the present disclosure can be used to fluidly connect a material layer precursor source to the hollow interior of a semiconductor processing system for depositing material layers onto and / or removing material from a substrate, for example during the fabrication of memory or logic semiconductor devices using atomic layer deposition and / or chemical vapor deposition techniques. However, the present disclosure is not limited to the fabrication of any particular semiconductor device or any particular device fabrication operation in general.

[0033] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specific disclosed embodiments and / or uses of the invention, as well as their obvious modifications and equivalents. Therefore, the scope of the disclosed invention should not be limited to the specific disclosed embodiments described below.

[0034] refer to Figure 1 This illustration shows a semiconductor processing system 200 including an injector device 100. The semiconductor processing system 200 includes a precursor source 202, a chamber arrangement 204 including the injector device 100, an exhaust source 206, and a controller 208. The precursor source 202 is fluidly connected to the chamber arrangement 204 via a precursor supply conduit 210. The precursor source 202 includes a material layer precursor 10 and is configured to deliver flow of the material layer precursor 10 to the chamber arrangement 204. The chamber arrangement 204 includes a substrate support 230 (e.g., ...). Figure 2 As shown), it is connected to the exhaust source 206 via the exhaust duct 214 and is configured to allow the substrate 2 (as shown) located on the substrate support 230 to be discharged under selected environmental conditions (e.g., pressure and / or temperature). Figure 2 (As shown) is exposed to the material layer precursor 10 to allow the material layer 4 to be deposited onto the substrate 2. The exhaust source 206 is connected to the external environment 12 outside the semiconductor processing system 200 and is configured to expose the material layer 4 (as shown) to the material layer precursor 10 for deposition onto the substrate 2. Figure 2During deposition onto substrate 2 (as shown), the flow of residual precursors and / or reaction products 14 emitted by chamber arrangement 204 is conveyed, for example using a vacuum pump and emission reduction equipment such as a scrubber. Controller 208 is operatively connected to one or more elements of semiconductor processing system 200, such as precursor source 202, to control the flow of material layer precursor 10 through injector device 100 during material layer 4 deposition onto substrate 2, and in this respect may be coupled to it via wired or wireless link 216.

[0035] In some examples, precursor source 202 may be configured to deliver one or more silicon-containing material layer precursors within the material layer precursor 10 delivered to chamber arrangement 204. Examples of suitable material layer precursors include non-chlorinated silicon-containing material layer precursors such as silane (SiH4) or silane (Si2H6) and / or halogenated, such as chlorinated silicon-containing material layer precursors, such as dichlorosilane (H2SiCl2) or trichlorosilane (HCl3Si). Other material layer precursors may include metal precursors, organometallic precursors, and halides. In some embodiments, the material layer precursor may include one or more elements selected from hydrogen, alkali metals, alkaline earth metals, transition metals, lanthanides, post-transition metals, Group 13 elements, Group 14 elements, chalcogens, nitrogen elements, halogens, and rare gases.

[0036] According to some examples, precursor source 202 may be configured to deliver a doped material layer precursor and / or alloy composition within material layer precursor 10 to chamber arrangement 204. Examples of suitable doped material layer precursors include material layer precursors containing n-type dopants, such as phosphorus (P) or arsine (As) compounds, and material layer precursors containing p-type dopants, such as boron (B) compounds; examples of suitable alloy compositions include germanium-containing compounds, such as germanane (GeH4) as a non-limiting example.

[0037] It is conceivable that precursor source 202 can be configured to deliver an etchant to chamber arrangement 204, the etchant flowing together with material layer precursor 10 or provided as a separate flow to chamber arrangement 204. Examples of suitable etchants include halogen-containing compounds, such as hydrochloric acid (HCl) and chlorine (Cl2), and fluorine-containing compounds, such as hydrofluoric acid (HF). It is also contemplated that precursor source 202 can be configured to deliver a diluent or carrier fluid (e.g., a gas) to chamber arrangement 204. For example, precursor source 202 can be configured to deliver hydrogen (H2), nitrogen (N2), rare gases, or mixtures containing one or more of the aforementioned gases. The carrier or diluent fluid can be delivered to chamber arrangement 204 together with or separately from material layer precursor 10, for example, through a purge fluid flow.

[0038] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. A substrate can be in any form, such as powder, plate, or workpiece. Substrates can be made of semiconductor materials, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). As an example, a substrate in powder form may have applications for pharmaceutical manufacturing. Porous substrates may contain polymers. Examples of workpieces may include medical devices (e.g., stents and injectors), jewelry, tooling, tableware, fasteners (e.g., screws, nails, or bolts), components for battery manufacturing (e.g., anodes, cathodes, or separators), or components for photovoltaic cells, etc. Continuous substrates may extend beyond the boundaries of the processing chamber where the deposition process occurs. In some processes, continuous substrates may move through the processing chamber such that the process continues until the end of the substrate is reached. Continuous substrates can be supplied from a continuous substrate supply system to allow the manufacture and output of continuous substrates in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic fibers or polymer fibers). Continuous substrates may also include carriers or sheets on which non-continuous substrates are mounted.

[0039] refer to Figure 2 This illustration shows a semiconductor processing system 200 including an injector device 100 according to an example of the present disclosure. In the illustrated example, a chamber arrangement 204 has a multi-substrate architecture 218 and includes a chamber body 220, a heating element array 222, and one or more temperature sensors 224. The one or more temperature sensors 224 may be positioned within the chamber body 220 to monitor the temperature of the chamber body 220 and / or the plurality of substrates 2 of the multi-substrate architecture 218 and to communicate with a controller 208. In some examples, the one or more temperature sensors 224 may be thermocouples, pyrometers, or combinations thereof. The heating element array 222 may surround the chamber body 220 and may be used to heat the plurality of substrates 2 to a predetermined temperature for depositing a material layer 4. The heating element array 222 may communicate with the one or more temperature sensors 224 via the controller 208, and the controller 208 may adjust the power supplied (not shown) to the heating element array 222 based on signals transmitted from the one or more temperature sensors 224. In some examples, the heating element array 222 may include a plurality of filament-type heater elements, such as linear lamps. According to some examples, the heating element array 222 may include a plurality of bulb-type heating elements. According to some examples, the heating element array 222 may include a combination of filament-type heating elements and bulb-type heating elements, and remains within the scope of this disclosure.

[0040] The chamber body 220 has a hollow interior 226 and may be generally bell-shaped. The chamber body 220 has a supply port 236 and an exhaust port 238. The supply port 236 fluidly connects the chamber body 220 to the precursor supply conduit 210, while the exhaust port 238 fluidly connects the chamber body 220 to the exhaust conduit 214. In this regard, the precursor source 202 is fluidly connected to the exhaust source 206 through the chamber body 220. It is envisioned that the chamber body 220 may be formed of a ceramic material 228. In some examples, the ceramic material 228 may be a transparent material, such as quartz or sapphire, which is transparent to electromagnetic radiation in the infrared band.

[0041] The hollow interior 226 of the chamber body 220 may further include an injector device 100, a substrate support 230, a base 232, a movable door 246, and an injector 234. The injector device 100 may be configured to support the injector 234 within the hollow interior 226 of the chamber body 220, and in this respect may include an injector holder 102, a reactor flange 104, a coupling member 106, and a connector body 108. The injector 234 is coupled to the injector device 100 at a first end. The injector 234 fluidly communicates the material layer precursor 10 into the hollow interior 226 of the chamber body 220 to deposit the material layer 4 onto a plurality of substrates 2 from a second end of the injector 234. In some examples, the injector 234 may be formed of a refractory material 240. It is contemplated that the injector 234 may be formed of a ceramic material. In some examples, as a non-limiting example, the injector 234 may be formed of silicon carbide (SiC), silicon (Si), or quartz. A movable door 246 supports the base 232 and the substrate support 230 within the hollow interior 226 of the chamber body 220. The movable door 246 allows the substrate support 230 to be inserted into or removed from the hollow interior 226 of the chamber body 220 from the outside of the chamber body 220. The substrate support 230 is supported by the base 232 within the hollow interior 226 of the chamber body 220 and may be configured to support a plurality of substrates 2. The substrate support 230 may be configured to support, for example, 100 substrates, 120 substrates, 150 substrates, 170 substrates, or more than 170 substrates. In some examples, the substrate support 230 may be formed of a refractory material 244. It is envisioned that the substrate support 230 may be formed of a ceramic material. In some examples, and by way of non-limiting example, the substrate support 230 may be formed of silicon carbide (SiC), silicon (Si), or quartz.

[0042] The base 232 supports the substrate support 230 within the hollow interior 226 of the chamber body 220. According to some examples, the workpiece may be supported solely by the base 232 within the hollow interior 226 of the chamber body 220 and held within the scope of this disclosure. In these examples, the workpiece may not be the substrate 2, but may be a component for aerospace, automotive, or other applications that may benefit from a layer of material deposited onto the workpiece. As those skilled in the art will understand, placing the workpiece directly on the base 232 will allow for larger workpieces to receive the layer of material to be deposited onto the workpiece. According to some examples, the workpiece may be supported by alternative support mechanisms within the base 232 and the hollow interior 226 of the chamber body 220, and may be a workpiece for aerospace, automotive, or other applications that may benefit from a layer of material deposited onto the workpiece. In some examples, the base 232 may be formed of a refractory material 242. It is contemplated that the base 232 may be formed of a ceramic material. In some examples, as a non-limiting example, the base 232 may be formed of silicon carbide (SiC), silicon (Si) or quartz.

[0043] Controller 208 can be configured to control one or more elements of semiconductor processing system 200. Controller 208 may include processor 248, device interface 250, user interface 252, multiple program modules 254, and memory 256. Device interface 250 may connect controller 208 to precursor source 202 and to processor 248 via wired or wireless link 216 and / or other elements of semiconductor processing system 200. Processor 248 is connected to device interface 250, operatively connected to user interface 252 to receive user input and / or provide user output, and configured to communicate with memory 256. Memory 256 includes a non-transitory machine-readable medium having multiple program modules 254 recorded thereon, the program modules 254 containing instructions that, when read by processor 248, cause processor 248 to perform certain operations. These operations include material layer deposition method 300 (e.g., Figure 7 The operation of the controller 208 (as shown) is as described herein. Although described herein with a specific architecture, it should be understood and recognized that the controller 208 may have a different architecture (e.g., a distributed computing architecture) in other examples of this disclosure and still remain within the scope of this disclosure. For example, the controller 208 may be configured to control the volume of the material layer precursor 10 flowing into the injector device 100 from the precursor source 202. The controller 208 may be configured to adjust the heating element array 222 in response to signals received from one or more temperature sensors 224 communicating with the controller 208. The controller 208 may be configured to open and close the movable door 246 of the chamber body 220. The controller 208 may be configured to remove excess precursor from the hollow interior 226 of the chamber body 220 to the external environment 12 via the exhaust source 206.

[0044] refer to Figure 3-6 This illustrates an injector device 100 according to an example of the present disclosure. The injector device 100 can be configured to support an injector 234 within the hollow interior 226 of a chamber body 220 (e.g., Figure 2 (as shown), and in this respect may include injector retainer 102, reactor flange 104, connecting member 106 and connector body 108.

[0045] Figure 3 The image shows a longitudinal sectional view of the injector device 100. The injector holder 102 may include an injector collar 110 having a first injector collar end 112 and a second injector collar end 114, an injector edge 116, and an injector protrusion 118. The first injector collar end 112 of the injector collar 110 slidably receives the injector 234 (e.g., Figure 2 (As shown). Injector edge 116 is coupled to a second injector collar end 114 of injector collar 110 and defines an injection orifice 120. Injector edge 116 also defines a plurality of longitudinal holes 136 radially outside the injection orifice 120. Injector protrusion 118 extends from injector edge 116 and is circumferential around the injection orifice 120. In the example shown, injector protrusion 118 is radially inside the longitudinal holes 136. In some examples, injector protrusion 118 may be radially outside the longitudinal holes 136. In the example shown, injector protrusion 118 forms a single acute angle. In some examples, injector protrusion 118 may form an obtuse angle, may form a ninety (90) degree angle relative to coupling member 106, may be circular, or may consist of one or more of the above geometries and remain within the scope of this disclosure. As those skilled in the art will understand, these geometries provide flexibility based on the selected environmental conditions for depositing material layer 4 onto substrate 2. In some examples, the injector holder 102 may be formed of a refractory material. It is contemplated that the injector holder 102 may be formed of a ceramic material 142. In some examples, as a non-limiting example, the injector holder 102 may be formed of silicon carbide (SiC), silicon (Si), or quartz.

[0046] The reactor flange 104 may include a tube member 122 having a first tube member end 124 and a second tube member end 126, a reactor edge 128, and a reactor protrusion 130. The reactor edge 128 is coupled to the first tube member end 124 of the tube member 122 and defines a reactor orifice 132. The reactor edge 128 also defines a plurality of longitudinal recesses 138 radially outward of the reactor orifice 132. The second tube member end 126 of the tube member 122 is coupled to a supply conduit 210 (e.g., Figure 2(As shown). Similar to injector retainer 102, reactor flange 104 can be formed of a refractory material. In some examples, reactor flange 104 can be formed of ceramic material 144. As a non-limiting example, reactor flange 104 is contemplated to be formed of silicon carbide (SiC), silicon (Si), or quartz. Reactor protrusion 130 is similar to injector protrusion 118 and extends from reactor edge 128. Reactor protrusion 130 is circumferential around reactor orifice 132 and radially inside a plurality of longitudinal recesses 138. In some examples, reactor protrusion 130 is radially outside a plurality of longitudinal recesses 138.

[0047] As those skilled in the art will understand, in some embodiments, one or more of the injector holder 102, reactor flange 104, and injector 234 may be formed of the same material. In some embodiments, two or more of the injector holder 102, reactor flange 104, and injector 234 may be formed of the same material. In some embodiments, all of the injector holder 102, reactor flange 104, and injector 234 may be formed of the same material. In some embodiments, at least one of the injector holder 102, reactor flange 104, and injector 234 comprises silicon.

[0048] In the example shown, reactor protrusion 130 is closer to connector body 108 than injector protrusion 118. As those skilled in the art will understand, the distance between reactor protrusion 130 and connector body 108 may be equal to or greater than injector protrusion 118. Although shown and described herein with the same geometry, it should be understood and recognized that both injector protrusion 118 and reactor protrusion 130 may have different geometries and remain within the scope of this disclosure. In some examples, one of injector protrusion 118 or reactor protrusion 130 may be absent and remain within the scope of this disclosure. In the example shown, injector protrusion 118 and reactor protrusion 130 are not vertically aligned along vertical dashed line 140. In some examples, both injector protrusion 118 or reactor protrusion 130, one of them, a portion of them, or a combination thereof may be aligned along vertical dashed line 140 and still remain within the scope of this disclosure. In some examples where the geometries of injector protrusion 118 and reactor protrusion 130 differ, all, part, or none of the different geometries may be aligned along the vertical dashed line 140 and still remain within the scope of this disclosure.

[0049] The connecting member 106 is positioned between the injector holder 102 and the reactor flange 104, and defines the precursor orifice 134. Together with the injector holder 102 and the reactor flange 104, the connecting member 106 flows through the supply orifice 236 and the precursor supply conduit 210 (e.g., in the material layer precursor 10) in the material layer precursor 10. Figure 2 (As shown) Following this, a sealing mechanism is provided for the material layer precursor 10 to flow from precursor source 202 to injector 234. Injector protrusion 118 and reactor protrusion 130 further assist the sealing mechanism. It is envisioned that the connecting member 106 may be formed of a malleable material 146. The malleable material 146 may be a material that can deform without breaking when subjected to compressive forces. It is envisioned that the connecting member 106 may be formed of a softer metallic material, such as nickel (Ni), palladium (Pd), platinum (Pt), titanium (Ti), and cadmium (Cd), other transition metal materials, or metal alloys, as non-limiting examples.

[0050] The connector body 108 may be one of a plurality of connector bodies. The connector body 108 is slidably received by a plurality of longitudinal recesses 138 through a plurality of longitudinal holes 136. The connector body 108 can mechanically connect the injector retainer 102, the reactor flange 104, and the connecting member 106 such that the injector protrusion 118 and the reactor protrusion 130 can cause deformation of the connecting member 106 at the protrusions. As those skilled in the art will understand, in addition to the deformation of the connecting member 106 at the protrusions, the connecting member 106 can also be subjected to compression caused by the injector retainer 102 and the reactor flange 104 as the connector body 108 is further positioned in the injector edge 116. This compression can further increase the sealing performance of the connecting member 106.

[0051] In the example shown, a plurality of longitudinal holes 136 are defined by injector edge 116, while a plurality of longitudinal recesses 138 are defined by reactor edge 128. In some examples, the plurality of longitudinal holes 136 may be defined by reactor edge 128, and the plurality of longitudinal recesses 138 may be defined by injector edge 116, while still remaining within the scope of this disclosure. The longitudinal holes 136 may be threaded or unthreaded to slidably receive connector body 108, and the longitudinal recesses 138 may be threaded. Although shown and described herein as similar to “bolts” for connector body 108, connector body 108 may include other techniques for connecting injector retainer 102, reactor flange 104, and connecting member 106. It is contemplated that connector body 108 may be formed of refractory material 148. It is contemplated that connector body 108 may be formed of metallic material. It is contemplated, by way of non-limiting example, that connector body 108 may be formed of silicon (Si), quartz, silicon carbide (SiC), alumina (Al2O3), stainless steel, or a metal alloy.

[0052] In the example shown, the injector holder 102, reactor flange 104, and connecting member 106 are connected via a precursor supply conduit 210, a supply port 236, a precursor port 134, and an injector 234 (e.g., Figure 2(As shown) The precursor source 202 is coupled to the hollow interior 226 of the chamber body 220, allowing the material layer precursor 10 to be deposited onto the substrate 2 and to form the material layer 4. As those skilled in the art will understand, the precursor aperture 134, reactor aperture 132, and injection aperture 120 can be aligned so that the material layer precursor 10 flows through the injector device 100 with minimal disturbance. Reducing the disturbance to the flow of the material layer precursor 10 can improve the uniformity of the material layer 4 formed on the substrate 2.

[0053] like Figure 4 The diagram shows an exploded longitudinal cross-sectional view of the injector device 100, wherein the connector body 108 is slidably received by a plurality of longitudinal recesses 138 through a plurality of longitudinal holes 136, and the connector body 108 is located in the injector edge 116. In some examples, the plurality of longitudinal holes 136 may be defined by a reactor edge 128, the plurality of longitudinal recesses 138 may be defined by the injector edge 116, and the connector body 108 may be disposed in the reactor edge 128 of the reactor flange 104.

[0054] like Figure 5 A partial transverse sectional view of the injector assembly 100 is shown. In the example shown, when the injector retainer 102, the connecting member 106, and the reactor flange 104 are connected via the connector body 108, the injector protrusion 118 and the reactor protrusion 130 can cause deformation of the connecting member 106 along the vertical dashed line 140. Although both the injector protrusion 118 and the reactor protrusion 130 are shown and described herein as having alignment along the vertical dashed line 140, one or both of the injector protrusion 118 or the reactor protrusion 130 may not be aligned along the vertical dashed line 140, and remain within the scope of this disclosure. As those skilled in the art will understand, the injector protrusion 118 and the reactor protrusion 130 may be aligned along the vertical dashed line 140 in a transverse view but not in a longitudinal view, and vice versa, and remain within the scope of this disclosure. In some examples, injector protrusion 118 and reactor protrusion 130 may be aligned along vertical dashed line 140 in both transverse and longitudinal views, and remain within the scope of this disclosure.

[0055] like Figure 6The diagram shows a partial exploded cross-sectional view of the injector device 100. In the example shown, the injector protrusion 118 and the reactor protrusion 130 are shown extending from the injector edge 116 and the reactor edge 128, respectively. Additionally, the coupling member 106 is shown unformed or pre-formed to receive the injector protrusion 118 or the reactor protrusion 130. As those skilled in the art will understand, when the connector body 108 connects the injector retainer 102, the reactor flange 104, and the coupling member 106, the coupling member 106 may exhibit the geometry of the injector protrusion 118 and / or the reactor protrusion 130. When the injector retainer 102, the reactor flange 104, and the coupling member 106 are joined together by the connector body 108, the coupling member 106 is compressed. The injector protrusion 118, together with the reactor protrusion 130, causes deformation of the coupling member 106, resulting in an improved seal of the injector device 100. The compression and deformation of the connecting member 106 can be partly attributed to the material selected for the connecting member 106, such as the stretchable material 146.

[0056] Reference Figure 7 The diagram illustrates a material layer deposition method 300. The material layer deposition method 300 may include a connector body 108 that mechanically connects an injector holder to a reactor flange using connecting members therebetween. For example, the connector body 108 may slidably receive through a plurality of longitudinal holes 136 and by a plurality of longitudinal recesses 138 (e.g., Figure 3 (As shown). The material layer deposition method 300 may also include placing the workpiece within a chamber body, for example, placing the substrate 2 within a chamber body 220 (e.g. Figure 2 As shown in box 302, the material layer deposition method 300 may further include heating the workpiece within the chamber body to a predetermined material layer deposition temperature, for example, by applying power to the heating element array 222, causing them to generate electromagnetic radiation in the infrared band (e.g., Figure 2 As shown in box 304. The material layer deposition method 300 may further include exposing the workpiece to a material layer precursor within the chamber body, for example, by placing a substrate 2 (such as...) Figure 2 (as shown) exposed to the material layer precursor 10 (e.g. Figure 2 As shown), and using a material layer precursor to deposit a material layer onto the workpiece, for example, using material layer precursor 10 to deposit material layer 4 (as shown). Figure 2 As shown in boxes 306 and 308.

[0057] Placing the workpiece 302 in the chamber body may include opening a movable door below the base, for example, a movable door 246 supporting the base 232 (such as...). Figure 2 As shown), and inserting a substrate support having one or more workpieces disposed in a substrate support into the chamber body, for example, a substrate support 230 having multiple substrates 2 (as shown). Figure 2 (As shown in the diagram), as indicated by box 302. The movable door can then be closed. Placing the workpiece 302 may include opening the movable door below the base and inserting the workpiece directly into the chamber body. Placing the workpiece 302 into the chamber body can be accomplished using a controller, for example, by using instructions from one or more of a plurality of program modules 254 recorded on memory 256 to open the movable door, place one or more workpieces in the substrate support, raise the substrate support into the chamber body, and close the movable door.

[0058] Heating the workpiece 304 to a predetermined material layer deposition temperature may include radiatively transferring heat into the interior of the chamber body, as shown in box 304. Radiative heating can be achieved by generating electromagnetic radiation in the infrared band from heater elements supported outside the chamber body and transferring it through the ceramic material forming the chamber body, for example, using a heating element array 222 (such as...). Figure 2 (As shown) generates and transports ceramic material 228 (such as) through the forming chamber body 220. Figure 2 (As shown). Heating the 304 workpiece may also include using a temperature sensor array to detect the temperature of the workpiece and transmit the signal to a controller, for example, one or more temperature sensors 224 communicating with the controller 208 via a wired or wireless link 216, transmitting the temperature of the substrate 2 (e.g. Figure 2 (As shown). Heating the workpiece within the chamber body 304 can be accomplished using a controller, for example, by using instructions from one or more of a plurality of program modules 254 recorded in the memory 256 of the controller 208 to control the heating element array, receive signals from temperature sensors, or adjust the output provided to the heating element array based on the signals received from the temperature sensors.

[0059] Exposing the workpiece 306 to the material layer precursor may include exposing the workpiece to a silicon-containing material layer precursor, such as a non-chlorinated silicon-containing material layer precursor, such as silane (SiH4) or silane (Si2H6), and / or a halogenated silicon-containing material layer precursor, such as a chlorinated silicon-containing material layer precursor, such as dichlorosilane (H2SiCl2) or trichlorosilane (HCl3Si). Other material layer precursors include metal precursors, organometallic precursors, and halides. In some embodiments, the material layer precursor may include one or more elements selected from hydrogen, alkali metals, alkaline earth metals, transition metals, lanthanides, post-transition metals, Group 13 elements, Group 14 elements, chalcogens, nitrogen elements, halogens, and rare gases. Exposing the workpiece 306 to the material layer precursor may include exposing the workpiece to a doped material layer precursor or an alloyed material layer precursor, such as an n-type doped material layer precursor including arsine (As) or phosphorus (P), or a p-type doped material layer precursor including boron (B), and a germanium-containing material layer precursor such as germanane (GeH4). Exposing the workpiece 306 to the material layer precursor may include exposing the substrate to an etchant, such as a chlorinated etchant like hydrochloric acid (HCl) or chlorine (Cl2) gas, or a fluorinated composition like hydrofluoric acid (HF). Exposing the workpiece 306 to the material layer precursor may include co-flowing a carrier or diluent fluid with the material layer precursor (e.g., hydrogen (H2) gas or nitrogen (N2) gas). It is contemplated that exposing the workpiece 306 to the material layer precursor may include exposing the workpiece to a mixture comprising a silicon-containing material layer precursor, a doped material layer precursor, an etchant, and a carrier or diluent fluid. It is also envisioned that the workpiece 306 can be exposed to the material layer precursor using a controller, for example, by using instructions from one or more of a plurality of program modules 254 recorded on memory 256 to control the material layer precursor 10 to flow from precursor source 202 into injector device 100 and then into injector 234.

[0060] Depositing a material layer 308 onto a workpiece may include depositing a nearly uniform material layer onto the workpiece, for example, depositing material layer 4 onto substrate 2 (e.g., Figure 2(As shown). The deposition of the 308 material layer may include the deposition of a silicon-containing material layer, such as an intrinsic silicon material layer or a silicon-germanium material layer, as well as a doped silicon-containing material layer. The deposition of the 308 material layer may include the deposition of a non-chlorinated silicon-containing material layer precursor (such as silane (SiH4) or disilane (Si2H6)) and / or a halogenated silicon-containing material layer precursor, such as a chlorinated silicon-containing material layer precursor (such as dichlorosilane (H2SiCl2) or trichlorosilane (HCl3Si)). The deposition of the 308 material layer may include the deposition of other material layer precursors, including metal precursors, organometallic precursors, and halides. The deposition of the 308 material layer may include the deposition of one or more elements selected from hydrogen, alkali metals, alkaline earth metals, transition metals, lanthanides, post-transition metals, Group 13 elements, Group 14 elements, chalcogens, nitrogen elements, halogens, and noble gases. The deposition of the 308 material layer may include depositing a doped material layer precursor or an alloyed material layer precursor, such as an n-type dopant containing arsine (As) or phosphorus (P), a p-type dopant containing boron (B), or a germanium-containing material layer precursor such as germanane (GeH4). It is envisioned that the deposition of the material layer can be controlled using a controller, for example, by using instructions from one or more of a plurality of program modules 254 recorded on memory 256 to control the material layer precursor 10 to flow from the precursor source 202 into the injector device 100, and then into the injector 234.

[0061] Although this disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that this disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of embodiments, as well as their obvious modifications and equivalents. Furthermore, while several variations of embodiments of this disclosure have been shown and described in detail, other modifications based on this disclosure will be apparent to those skilled in the art. It is also contemplated that various combinations or sub-combinations of specific features and aspects of the embodiments may be made and still fall within the scope of this disclosure. It should be understood that various features and aspects of the disclosed embodiments may be combined or substituted with each other to form variations of embodiments of this disclosure. Therefore, it is intended that the scope of this disclosure should not be limited to the specific embodiments described above. The illustrations presented herein are not intended to be actual views of any particular material, structure, or device, but are merely idealized representations for describing embodiments of this disclosure.

[0062] The headings provided herein (if any) are for convenience only and do not necessarily affect the scope or meaning of the devices and methods disclosed herein.

Claims

1. An injector device, comprising: Injector holder, the injector holder further comprising: An injector collar having a first injector collar end and a second injector collar end; and The injector edge is connected to the end of the first injector collar and defines an injection orifice; An injector, which is slidably received by the end of the second injector collar; The reactor flange further includes: Pipe member, having a first pipe member end and a second pipe member end; and The reactor edge is connected to the end of the first tubular member and defines the reactor orifice; A connecting member that fluidly connects the reactor flange to the injector retainer and defines a forebody orifice; A connector body configured to mechanically engage the injector retainer to the reactor flange; and At least one of an injector protrusion and a reactor protrusion, the injector protrusion extending from the injector edge around the injection hole, and the reactor protrusion extending from the reactor edge around the reactor hole.

2. The injector device according to claim 1, further comprising the injector protrusion and the reactor protrusion.

3. The injector device according to any one of claims 1 to 2, further comprising: The injector edge is also defined by a plurality of longitudinal holes on the radially outer side of the injector protrusion; The reactor edge is defined by a plurality of longitudinal recesses on the radially outer side of the reactor protrusion; and The connector body is disposed in the edge of the injector, and the connector body is slidably received by the plurality of longitudinal holes and coupled to the plurality of longitudinal recesses.

4. The injector device according to any one of claims 1 to 2, further comprising: The injector edge is also defined by a plurality of longitudinal recesses on the radially outer side of the injector protrusion; The reactor edge is defined by a plurality of longitudinal holes on the radially outer side of the reactor protrusion; and The connector body is disposed in the edge of the reactor, and the connector body is slidably received by the plurality of longitudinal holes and connected to the plurality of longitudinal recesses.

5. The injector device according to any one of claims 1 to 4, wherein, The injector retainer is made of refractory material, and the reactor flange is also made of refractory material.

6. The injector device according to any one of claims 1 to 5, wherein, The connecting component is made of a malleable material.

7. The injector device according to any one of claims 1 to 6, wherein, The connector body is one of a plurality of connector bodies and is made of refractory material.

8. An injector holder, comprising: An injector collar having a first injector collar end and a second injector collar end; The injector edge is connected to the first injector collar end of the injector collar and defines an injection hole; as well as An injector protrusion extends from the edge of the injector around the injection hole.

9. The injector holder of claim 8, further comprising an injector slidably received by the second injector collar end of the injector holder.

10. The injector retainer according to any one of claims 8 to 9, further comprising the injector edge, the injector edge further defining a plurality of longitudinal holes radially outward of the injector protrusion.

11. The injector retainer according to any one of claims 8 to 9, further comprising the injector edge, the injector edge further defining a plurality of longitudinal recesses radially outward of the injector protrusion.

12. The injector retainer according to any one of claims 8 to 11, wherein, The injector retainer is made of refractory material.

13. A reactor flange, comprising: A pipe component having a first pipe component end and a second pipe component end; The reactor edge, which is connected to the first pipe member end of the pipe member and defines the reactor orifice; as well as The reactor protrusion extends from the edge of the reactor around the reactor orifice.

14. The reactor flange of claim 13, further comprising a precursor source fluidly connected to the end of the second tubular component of the reactor flange.

15. The reactor flange according to any one of claims 13 to 14, further comprising the reactor edge, the reactor edge further defining a plurality of longitudinal recesses radially outward of the reactor protrusion.

16. The reactor flange according to any one of claims 13 to 14, further comprising the reactor edge, the reactor edge further defining a plurality of longitudinal holes radially outward of the reactor protrusion.

17. The reactor flange according to any one of claims 13 to 16, wherein, The reactor flange is made of refractory material.

18. A semiconductor processing system, comprising: An injector device according to any one of claims 1 to 7; A precursor source, which is fluidly connected to the injector device; The main body of the chamber has a hollow interior; An exhaust source is fluidly connected to the chamber body, and through the chamber body is fluidly connected to the precursor source; A substrate support is positioned within the hollow interior of the chamber body; The workpiece is supported on the substrate support; as well as A controller operatively connected to and configured to communicate with the precursor source, the controller responding to instructions recorded in a memory to deposit a material layer onto the workpiece.

19. A method for depositing a material layer onto a workpiece, comprising: At the semiconductor processing system, the semiconductor processing system includes a workpiece and an injector device disposed within the interior of a chamber body, the injector device including an injector holder having an injector protrusion; A reactor flange with reactor protrusions; Connecting components; and a connector body configured to mechanically connect the injector retainer, the connecting member, and the reactor flange, the connector body being configured to compress the connecting member between the injector retainer and the reactor flange; The workpiece is placed inside the cavity body; The workpiece is heated to a predetermined material layer deposition temperature; The workpiece is exposed to the material layer precursor; as well as The material layer is deposited onto the workpiece using the material layer precursor.

20. The method of claim 19, further comprising inserting a substrate support into the interior of the chamber body, wherein, The workpiece is placed on the substrate support, and wherein the workpiece is the substrate.

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