A phonon polariton modulating device and a preparation method thereof

Abstract

This invention relates to the technical field of micro / nano optical elements, and more specifically, to a phonon polariton control device and its fabrication method. The fabrication method includes: S1. Taking a dielectric substrate and fabricating a first metal electrode and a second metal electrode on the dielectric substrate; S2. Obtaining a ferroelectric two-dimensional material film and a hyperbolic phonon polariton van der Waals material film using a mechanical exfoliation method; S3. Transferring the ferroelectric two-dimensional material film onto the dielectric substrate, with both ends of the ferroelectric two-dimensional material film in contact with the first metal electrode and the second metal electrode, respectively; S4. Transferring the hyperbolic phonon polariton van der Waals material film onto the ferroelectric two-dimensional material film to obtain the phonon polariton control device. The device includes a dielectric substrate, a first metal electrode, a second metal electrode, a ferroelectric two-dimensional material film, and a hyperbolic phonon polariton van der Waals material film. This invention has the advantages of low power consumption, high efficiency, and real-time dynamic control.

Description

Technical Field

[0001] This invention relates to the technical field of micro-nano optical elements, and more specifically, to a phonon polariton modulation device and its fabrication method. Background Technology

[0002] Hyperbolic phonon polaritons possess extremely high optical field localization capability, ultra-low optical loss, and rich tunability in the infrared region. These properties enable applications in super-resolution imaging, mid-infrared light detection, biochemical sensing, and quantum optics. Tunability is key to their wider application, as rich tunability enhances the manipulation of photonic devices. Hyperbolic phonon polariton van der Waals materials exhibit in-plane anisotropic hyperbolic dispersion, demonstrating excellent application value. In recent years, methods for controlling phonon polaritons in hyperbolic phonon polariton van der Waals materials have included: patterning the material to construct micro / nano structures, constructing in-plane topological transitions, and fabricating metallic antennas on the material. However, existing fabrication processes are complex and have low control efficiency, making real-time dynamic control difficult. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of existing technologies in controlling hyperbolic phonon polaritons, which are difficult to achieve real-time dynamic control, and to provide a phonon polariton control device and its preparation method, which has the effects of low consumption, high efficiency and real-time dynamic control.

[0004] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: A method for fabricating a phonon polariton modulation device is provided, comprising the following steps: S1. Take a dielectric substrate and fabricate a first metal electrode and a second metal electrode on the dielectric substrate; S2. Ferroelectric two-dimensional material films and hyperbolic phonon polariton van der Waals material films were obtained using mechanical exfoliation. S3. Transfer the ferroelectric two-dimensional material film to the dielectric substrate, wherein the two ends of the ferroelectric two-dimensional material film are in contact with the first metal electrode and the second metal electrode, respectively; S4. The hyperbolic phonon polariton van der Waals material film is transferred onto the ferroelectric two-dimensional material film to obtain a phonon polariton control device.

[0005] This invention discloses a method for fabricating a phonon polariton modulation device. The method involves setting a ferroelectric two-dimensional material film with its two ends in contact with a first metal electrode and a second metal electrode, respectively, and stacking a hyperbolic phonon polariton van der Waals material film on top of the ferroelectric two-dimensional material film. By applying different voltages to the ferroelectric two-dimensional material film, its polarization state is changed, and the resulting change in dielectric environment is utilized to effectively control the phonon polariton dispersion and propagation characteristics in the hyperbolic phonon polariton van der Waals material film. Furthermore, the spontaneous polarization direction of the ferroelectric two-dimensional material film can stably exist in two opposite orientation states without an external electric field. This polarization state is stable; utilizing the bistable nature of ferroelectricity, the controlled state can be maintained after power failure, requiring energy consumption only during switching, which can greatly reduce static power consumption; the atomic layers in the hyperbolic phonon polariton van der Waals material film are stacked by weak van der Waals forces, while the atoms within the layers are connected by strong covalent or ionic bonds. Due to the weak interlayer interaction, the hyperbolic phonon polariton van der Waals material film can be obtained by mechanical exfoliation. Furthermore, stacking the hyperbolic phonon polariton van der Waals material film with ferroelectric two-dimensional material film to form a heterostructure can avoid lattice mismatch problems, is compatible with existing semiconductor processes, and is easy to achieve on-chip integration.

[0006] Furthermore, the ferroelectric two-dimensional material film is a CIPS layer.

[0007] Furthermore, the hyperbolic phonon polariton van der Waals material film is an α-phase molybdenum oxide.

[0008] Furthermore, the hyperbolic phonon polariton van der Waals material film is rectangular.

[0009] Further, in step S1, the first metal electrode and the second metal electrode are arranged on the dielectric substrate along a first direction; the length of the ferroelectric two-dimensional material film in the first direction is 1~100000µm, and the thickness of the ferroelectric two-dimensional material film is 1~700nm; the length of the hyperbolic phonon polariton van der Waals material film in the first direction is 1~100000µm, and the thickness of the hyperbolic phonon polariton van der Waals material film is 1~700nm.

[0010] Further, step S1 includes the following steps: S11. Use an intrinsic silicon substrate with a silicon oxide coating or an N-doped silicon substrate with a silicon oxide coating as the dielectric substrate; S12. Spin-coating photoresist onto the surface of the dielectric substrate, curing, exposing, and developing to obtain a patterned electrode region; S13. A titanium film and a gold film are sequentially deposited in the patterned electrode area, and then the metal film outside the patterned electrode area is peeled off to obtain the first metal electrode and the second metal electrode.

[0011] Further, step S2 includes the following steps: S21. Ferroelectric two-dimensional materials and hyperbolic phonon polariton van der Waals materials were bonded together using adhesive tape, and films were obtained by repeated bonding. S22. Heat the film tape with ferroelectric two-dimensional material and the film tape with hyperbolic phonon polariton van der Waals material; S23. Take a PDMS film, and attach the heated film layer tape with ferroelectric two-dimensional material and the film layer tape with hyperbolic phonon polariton van der Waals material to the PDMS film respectively. Then peel off the tape to obtain a PDMS film with ferroelectric two-dimensional material film layer and a PDMS film with hyperbolic phonon polariton van der Waals material film layer.

[0012] Further, step S3 includes: transferring the PDMS film with the ferroelectric two-dimensional material film layer onto the dielectric substrate by a dry method, and making the two ends of the ferroelectric two-dimensional material film layer contact the first metal electrode and the second metal electrode respectively, and then removing the PDMS film by heating; step S4 includes: transferring the PDMS film with the hyperbolic phonon polariton van der Waals material film layer onto the ferroelectric two-dimensional material film layer by a dry method, and then removing the PDMS film by heating to obtain the phonon polariton modulation device.

[0013] The present invention also provides a phonon polariton modulation device, comprising a dielectric substrate, wherein a first metal electrode, a second metal electrode, and a ferroelectric two-dimensional material film are disposed on the dielectric substrate, the ferroelectric two-dimensional material film being connected to both the first metal electrode and the second metal electrode; further comprising a hyperbolic phonon polariton van der Waals material film attached to the ferroelectric two-dimensional material film; wherein the ferroelectric two-dimensional material film is a CIPS layer, and the hyperbolic phonon polariton van der Waals material film is α-phase molybdenum oxide.

[0014] Furthermore, both the first metal electrode and the second metal electrode are titanium-gold composite metal electrodes.

[0015] Compared with the prior art, the beneficial effects of the present invention are: This invention discloses a phonon polariton control device and its fabrication method. The device comprises a ferroelectric two-dimensional material film with its two ends in contact with a first metal electrode and a second metal electrode, respectively, and a hyperbolic phonon polariton van der Waals material film stacked on top of the ferroelectric two-dimensional material film. By applying different voltages to the ferroelectric two-dimensional material film, its polarization state is changed, and the resulting change in dielectric environment is utilized to effectively control the phonon polariton dispersion and propagation characteristics in the hyperbolic phonon polariton van der Waals material film. Furthermore, the spontaneous polarization direction of the ferroelectric two-dimensional material film can stably exist in two opposite orientation states without an external electric field. This polarization state is stable; utilizing the bistable nature of ferroelectricity, the controlled state can be maintained after power failure, requiring energy consumption only during switching, which can greatly reduce static power consumption; the atomic layers in the hyperbolic phonon polariton van der Waals material film are stacked by weak van der Waals forces, while the atoms within the layers are connected by strong covalent or ionic bonds. Due to the weak interlayer interaction, the hyperbolic phonon polariton van der Waals material film can be obtained by mechanical exfoliation. Furthermore, stacking the hyperbolic phonon polariton van der Waals material film with ferroelectric two-dimensional material film to form a heterostructure can avoid lattice mismatch problems, is compatible with existing semiconductor processes, and is easy to achieve on-chip integration. Attached Figure Description

[0016] Figure 1 This is a flowchart of a method for fabricating a phonon polariton modulation device according to the present invention; Figure 2 This is a schematic diagram of the device structure formed after step S1 in the preparation method of the present invention; Figure 3 This is a schematic diagram of the device structure formed after step S3 in the preparation method of the present invention; Figure 4 This is a schematic diagram of the device structure formed after step S4 in the preparation method of the present invention; Figure 5 This is a schematic diagram of the structure of a phonon polariton control device according to the present invention.

[0017] In the attached figure: 100, dielectric substrate; 210, first metal electrode; 220, second metal electrode; 300, ferroelectric two-dimensional material film; 400, hyperbolic phonon polariton van der Waals material film. Detailed Implementation

[0018] The present invention will be further described below with reference to specific embodiments. The accompanying drawings are for illustrative purposes only, representing schematic diagrams rather than actual physical objects, and should not be construed as limiting the scope of this patent. To better illustrate the embodiments of the present invention, some components in the drawings may be omitted, enlarged, or reduced, and do not represent the actual dimensions of the product. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted in the drawings.

[0019] In the accompanying drawings of the embodiments of the present invention, the same or similar reference numerals correspond to the same or similar components. In the description of the present invention, it should be understood that if terms such as "upper," "lower," "left," "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, they are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the terms used to describe positional relationships in the drawings are only for illustrative purposes and should not be construed as limiting the present patent. For those skilled in the art, the specific meaning of the above terms can be understood according to the specific circumstances.

[0020] Example 1 like Figures 1 to 4 The first embodiment of a method for fabricating a phonon polariton modulation device according to the present invention is shown, comprising the following steps: S1. Take a dielectric substrate 100 and fabricate a first metal electrode 210 and a second metal electrode 220 on the dielectric substrate 100; S2. Ferroelectric two-dimensional material film 300 and hyperbolic phonon polaritrile van der Waals material film 400 were obtained by mechanical exfoliation. S3. Transfer the ferroelectric two-dimensional material film 300 onto the dielectric substrate 100, with the two ends of the ferroelectric two-dimensional material film 300 in contact with the first metal electrode 210 and the second metal electrode 220, respectively. S4. Transfer the hyperbolic phonon polariton van der Waals material film 400 onto the ferroelectric two-dimensional material film 300 to obtain a phonon polariton control device.

[0021] The present invention discloses a method for fabricating a phonon polariton modulation device. A ferroelectric two-dimensional material film 300 is configured such that its two ends are in contact with a first metal electrode 210 and a second metal electrode 220, respectively, and a hyperbolic phonon polariton van der Waals material film 400 is stacked on top of the ferroelectric two-dimensional material film 300. By applying different voltages to the ferroelectric two-dimensional material film 300, its polarization state is changed, and the resulting change in dielectric environment is utilized to effectively control the phonon polariton dispersion and propagation characteristics in the hyperbolic phonon polariton van der Waals material film 400. The ferroelectric two-dimensional material film 300, without an external electric field, can stably exist in two opposite polarization directions. The orientation state is stable; utilizing the ferroelectric bistable state, the controlled state can be maintained after power failure, and energy is only consumed during switching, which can greatly reduce static power consumption; the atomic layers in the hyperbolic phonon polariton van der Waals material film 400 are stacked by weak van der Waals forces, while the atoms within the layers are connected by strong covalent bonds or ionic bonds. Due to the weak interlayer interaction, the hyperbolic phonon polariton van der Waals material film 400 can be obtained by mechanical exfoliation. Furthermore, the hyperbolic phonon polariton van der Waals material film 400 can be stacked with the ferroelectric two-dimensional material film 300 to form a heterostructure, which can avoid lattice mismatch problems, is compatible with existing semiconductor processes, and is easy to achieve on-chip integration.

[0022] In this embodiment, the ferroelectric two-dimensional material film 300 is a CIPS layer, and the hyperbolic phonon polariton van der Waals material film 400 is α-phase molybdenum oxide. The hyperbolic phonon polariton van der Waals material film 400 is rectangular, and this rectangular shape facilitates visual identification of the crystal orientation.

[0023] like Figure 4 As shown, in step S1, the first metal electrode 210 and the second metal electrode 220 are arranged along the X-axis on the dielectric substrate 100; the length of the ferroelectric two-dimensional material film 300 in the X-axis direction is 1~100000µm, and the length of the hyperbolic phonon polariton van der Waals material film 400 in the X-axis direction is 1~100000µm; it should be noted that the area of ​​the hyperbolic phonon polariton van der Waals material film 400 can be greater than, equal to or less than the area of ​​the ferroelectric two-dimensional material film 300. Preferably, the area of ​​the hyperbolic phonon polariton van der Waals material film 400 is less than the area of ​​the ferroelectric two-dimensional material film 300. In this embodiment, the thickness of the ferroelectric two-dimensional material film 300 is 1~700nm, and the thickness of the hyperbolic phonon polariton van der Waals material film 400 is 1~700nm.

[0024] Example 2 This embodiment is a second embodiment of a method for fabricating a phonon polariton modulation device. This embodiment is similar to Embodiment 1, such as... Figures 2 to 4As shown, step S1 includes the following steps: S11. Take an intrinsic silicon substrate with a silicon oxide coating or an N-doped silicon substrate with a silicon oxide coating as a dielectric substrate 100, and then clean the dielectric substrate 100 sequentially with acetone, alcohol and pure water, and then dry the dielectric substrate 100. S12. Spin-coat positive photoresist on the surface of dielectric substrate 100, cure, expose, and develop to obtain a patterned electrode area; specifically: spin-coat AR P5350 photoresist on the surface of dielectric substrate 100, and after curing and ultraviolet maskless photolithography, use AR300-26 developer to remove the positive photoresist in the exposed area to obtain a patterned electrode area. S13. A titanium film and a gold film are sequentially deposited in the patterned electrode region, and then the metal film outside the patterned electrode region is peeled off to obtain the first metal electrode 210 and the second metal electrode 220; specifically: a 5-10 nm titanium film and a 50-200 nm gold film are sequentially deposited in the patterned electrode region by electron beam evaporation, magnetron sputtering or thermal evaporation, and then the metal film outside the patterned electrode region is peeled off using a peeling process to obtain the first metal electrode 210 and the second metal electrode 220 arranged along the X-axis direction, as shown. Figure 2 and Figure 4 As shown.

[0025] In this embodiment, step S2 includes the following steps: S21. Ferroelectric two-dimensional materials and hyperbolic phonon polariton van der Waals materials are bonded together using adhesive tape, and the films are obtained by multiple bonding processes; specifically, the adhesive tape is 3M invisible adhesive tape. S22. Heat the film tape with ferroelectric two-dimensional material and the film tape with hyperbolic phonon polariton van der Waals material. S23. Take a PDMS membrane, and attach the heated film layer tape with ferroelectric two-dimensional material and the film layer tape with hyperbolic phonon polariton van der Waals material to the PDMS membrane respectively. Then peel off the tape to obtain a PDMS membrane with ferroelectric two-dimensional material film layer 300 and a PDMS membrane with hyperbolic phonon polariton van der Waals material film layer 400.

[0026] In this embodiment, step S3 includes: using a positioning and transfer device to dry transfer the PDMS film with the ferroelectric two-dimensional material film layer 300 onto the dielectric substrate 100, wherein the two ends of the ferroelectric two-dimensional material film layer 300 are respectively connected to the first metal electrode 210 and the second metal electrode 220, and then removing the PDMS film by heating, as shown below. Figure 3 As shown.

[0027] In this embodiment, step S4 includes: using a positioning transfer device to dry transfer the PDMS film with the hyperbolic phonon polariton van der Waals material film layer 400 onto the ferroelectric two-dimensional material film layer 300, and then removing the PDMS film by heating to obtain the phonon polariton modulation device, such as... Figure 4 As shown.

[0028] The ferroelectric two-dimensional material film 300 of this invention can change its polarization state and modulate phonon polaritons by applying an external voltage. Furthermore, its bistable state can maintain the modulated state after power is turned off. Simultaneously, it can be easily heterogeneously integrated with the hyperbolic phonon polariton van der Waals material film 400 as a two-dimensional van der Waals material. Therefore, the phonon polariton modulation device prepared by the method of this invention has the characteristics of low power consumption, high efficiency, and real-time dynamic control, providing a new technical path for the development of next-generation programmable nanophotonic chips, ultrasensitive dynamic sensors, low-power optical memories, and intelligent metasurfaces.

[0029] Example 3 like Figure 5 The illustration shows an embodiment of a phonon polariton modulation device according to the present invention, comprising a dielectric substrate 100, on which a first metal electrode 210, a second metal electrode 220, and a ferroelectric two-dimensional material film 300 are disposed, the ferroelectric two-dimensional material film 300 being connected to both the first metal electrode 210 and the second metal electrode 220; and further comprising a hyperbolic phonon polariton van der Waals material film 400 attached to the ferroelectric two-dimensional material film 300; wherein the ferroelectric two-dimensional material film 300 is a CIPS layer, and the hyperbolic phonon polariton van der Waals material film 400 is α-phase molybdenum oxide (α-MoO3). The phonon polariton modulation device of the present invention can be prepared by the preparation method described in Embodiment 1 or Embodiment 2.

[0030] In this embodiment, the hyperbolic phonon polariton van der Waals material film 400 is rectangular. Preferably, the hyperbolic phonon polariton van der Waals material film 400 is rectangular, and its long side is arranged along the X-axis direction. This increases the relative contact area between the hyperbolic phonon polariton van der Waals material film 400 and the ferroelectric two-dimensional material film 300, thereby increasing the area with phonon polariton modulation effect. Specifically, the length of the ferroelectric two-dimensional material film 300 in the X-axis direction is 1~100000µm, and the length of the hyperbolic phonon polariton van der Waals material film 400 in the X-axis direction is 1~100000µm. Preferably, the area of ​​the hyperbolic phonon polariton van der Waals material film 400 is smaller than the area of ​​the ferroelectric two-dimensional material film 300. In this embodiment, the thickness of the ferroelectric two-dimensional material film 300 is 1~700 nm, and the thickness of the hyperbolic phonon polariton van der Waals material film 400 is 1~700 nm. In this embodiment, both the first metal electrode 210 and the second metal electrode 220 are titanium-gold composite metal electrodes.

[0031] In the specific implementation of the above embodiments, the technical features can be combined in any non-contradictory way. For the sake of brevity, not all possible combinations of the above technical features are described. However, as long as the combination of these technical features is not contradictory, it should be considered to be within the scope of this specification.

[0032] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A method for fabricating a phonon polariton modulation device, characterized in that, Includes the following steps: S1. Take a dielectric substrate (100) and fabricate a first metal electrode (210) and a second metal electrode (220) on the dielectric substrate (100). S2. Ferroelectric two-dimensional material film (300) and hyperbolic phonon polariton van der Waals material film (400) were obtained by mechanical exfoliation. S3. The ferroelectric two-dimensional material film (300) is transferred onto the dielectric substrate (100), and the two ends of the ferroelectric two-dimensional material film (300) are in contact with the first metal electrode (210) and the second metal electrode (220), respectively; S4. The hyperbolic phonon polariton van der Waals material film (400) is transferred onto the ferroelectric two-dimensional material film (300) to obtain a phonon polariton control device.

2. The method for fabricating the phonon polariton modulation device according to claim 1, characterized in that, The ferroelectric two-dimensional material film (300) is a CIPS layer.

3. The method for fabricating the phonon polariton modulation device according to claim 1, characterized in that, The hyperbolic phonon polariton van der Waals material film (400) is α-phase molybdenum oxide.

4. The method for fabricating the phonon polariton modulation device according to claim 3, characterized in that, The hyperbolic phonon polariton van der Waals material film (400) is rectangular.

5. The method for fabricating a phonon polariton modulation device according to any one of claims 1 to 4, characterized in that, In step S1, the first metal electrode (210) and the second metal electrode (220) are arranged on the dielectric substrate (100) along a first direction; the ferroelectric two-dimensional material film (300) has a length of 1~100000µm in the first direction and a thickness of 1~700nm; the hyperbolic phonon polariton van der Waals material film (400) has a length of 1~100000µm in the first direction and a thickness of 1~700nm.

6. The method for fabricating the phonon polariton modulation device according to claim 1, characterized in that, Step S1 includes the following steps: S11. Take an intrinsic silicon substrate with a silicon oxide coating or an N-doped silicon substrate with a silicon oxide coating as the dielectric substrate (100). S12. Photoresist is spin-coated, cured, exposed, and developed on the surface of the dielectric substrate (100) to obtain a patterned electrode region; S13. A titanium film and a gold film are sequentially deposited in the patterned electrode area, and then the metal film outside the patterned electrode area is peeled off to obtain the first metal electrode (210) and the second metal electrode (220).

7. The method for fabricating the phonon polariton modulation device according to claim 1, characterized in that, Step S2 includes the following steps: S21. Ferroelectric two-dimensional materials and hyperbolic phonon polariton van der Waals materials were bonded together using adhesive tape, and films were obtained by repeated bonding. S22. Heat the film tape with ferroelectric two-dimensional material and the film tape with hyperbolic phonon polariton van der Waals material. S23. Take a PDMS film, and attach the heated film layer tape with ferroelectric two-dimensional material and the film layer tape with hyperbolic phonon polariton van der Waals material to the PDMS film respectively. Then peel off the tape to obtain a PDMS film with ferroelectric two-dimensional material film layer (300) and a PDMS film with hyperbolic phonon polariton van der Waals material film layer (400).

8. The method for fabricating the phonon polariton modulation device according to claim 7, characterized in that, Step S3 includes: transferring the PDMS film with the ferroelectric two-dimensional material film layer (300) onto the dielectric substrate (100) by dry transfer, and making the two ends of the ferroelectric two-dimensional material film layer (300) contact the first metal electrode (210) and the second metal electrode (220) respectively, and then removing the PDMS film by heating; Step S4 includes: transferring the PDMS film with hyperbolic phonon polariton van der Waals material film layer (400) onto the ferroelectric two-dimensional material film layer (300) by dry transfer, and then removing the PDMS film by heating to obtain the phonon polariton control device.

9. A phonon polariton modulation device, characterized in that, The device includes a dielectric substrate (100), on which a first metal electrode (210), a second metal electrode (220), and a ferroelectric two-dimensional material film (300) are disposed, wherein the ferroelectric two-dimensional material film (300) is connected to both the first metal electrode (210) and the second metal electrode (220); it also includes a hyperbolic phonon polariton van der Waals material film (400) attached to the ferroelectric two-dimensional material film (300); wherein the ferroelectric two-dimensional material film (300) is a CIPS layer, and the hyperbolic phonon polariton van der Waals material film (400) is an α-phase molybdenum oxide.

10. The phonon polariton modulation device according to claim 9, characterized in that, Both the first metal electrode (210) and the second metal electrode (220) are titanium-gold composite metal electrodes.

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