Method for improving etch chamber rate uniformity, upper electrode disk, and etch apparatus

By using an upper electrode disk with a non-planar curved surface in the etching cavity, the problem of uneven etching rate caused by uneven plasma density was solved, thereby improving the etching uniformity and process stability within the wafer surface and increasing the yield of semiconductor production lines.

CN122177714APending Publication Date: 2026-06-09SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202610226834.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-02-26
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

In existing parallel-plate plasma etching cavities, the flat upper electrode disk leads to uneven plasma density distribution, resulting in uneven etching rates and affecting the uniformity and process stability within the wafer surface.

Method used

By employing a non-planar curved surface top electrode disk and adjusting the plasma density distribution inside the etching cavity, the uniformity of the etching rate between the wafer edge and the center region is improved.

Benefits of technology

It significantly improves the in-plane uniformity and process stability of the etching process, ensures the consistency of etching dimensions in different areas of the wafer, and improves the yield of semiconductor production lines.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122177714A_ABST
    Figure CN122177714A_ABST
Patent Text Reader

Abstract

The present application provides a method for improving the etching cavity rate uniformity, an upper electrode disc and an etching device to solve the existing problem of poor in-plane uniformity caused by the flat upper electrode, that is, the etching rate is fast at the edge and slow in the middle. The improvement method comprises: providing an upper electrode disc, and configuring the bottom surface of the upper electrode disc towards the wafer side as a non-planar curved surface topography; installing the upper electrode disc in the etching cavity; in the etching process, the non-planar curved surface topography is used to regulate the plasma density distribution in the etching cavity. By using the topography to reshape the spatial radio frequency electric field distribution, the etching rate difference between the wafer edge and the center can be balanced, so that the plasma is uniformly distributed on the wafer surface, thereby greatly improving the in-plane uniformity and process stability.
Need to check novelty before this filing date? Find Prior Art