Method for improving rate uniformity of etching cavity, upper electrode disc and etching equipment
By using an upper electrode disk with a non-planar curved surface in the etching cavity, the problem of uneven etching rate caused by uneven plasma density was solved, thereby improving the etching uniformity and process stability within the wafer surface and increasing the yield of semiconductor production lines.
CN122177714APending Publication Date: 2026-06-09SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information
- Application Number
- CN202610226834.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-02-26
- Publication Date
- 2026-06-09
AI Technical Summary
Technical Problem
In existing parallel-plate plasma etching cavities, the flat upper electrode disk leads to uneven plasma density distribution, resulting in uneven etching rates and affecting the uniformity and process stability within the wafer surface.
Method used
By employing a non-planar curved surface top electrode disk and adjusting the plasma density distribution inside the etching cavity, the uniformity of the etching rate between the wafer edge and the center region is improved.
Benefits of technology
It significantly improves the in-plane uniformity and process stability of the etching process, ensures the consistency of etching dimensions in different areas of the wafer, and improves the yield of semiconductor production lines.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a method for improving the rate uniformity of an etching cavity, an upper electrode disc and etching equipment, and aims to solve the problem of poor in-plane uniformity of fast edge and slow middle etching rate caused by a flat upper electrode in the prior art. The improvement method comprises the following steps: providing an upper electrode disc, and configuring the bottom surface of the upper electrode disc towards a wafer side into a non-planar curved surface shape; an upper electrode disc is installed in the etching cavity; in the etching process, the plasma density distribution in the etching cavity is regulated and controlled through the non-planar curved surface morphology. Space radio frequency electric field distribution is remodeled through the morphology, the etching rate difference between the edge and the center of the wafer can be balanced, plasmas are evenly distributed on the surface of the wafer, and then in-plane uniformity and process stability are greatly improved.
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