Multi-chip ring array vertical cavity surface emitting laser

Abstract

This invention relates to the field of semiconductor lasers, and more particularly to a multi-chip ring array vertical cavity surface-emitting laser (VCSEL), comprising: a gain chip array, a beam-splitting axial conical lens group, a beam-combining axial conical lens group, and an output coupling mirror arranged coaxially. The gain chip array includes N (N>1) VECSEL gain chips arranged in M ​​concentric rings (M>1). The beam-splitting axial conical lens group includes M beam-splitting axial conical lenses. The beam-combining axial conical lens group includes M beam-combining axial conical lenses. The N laser beams first pass through the beam-splitting axial conical lens group to generate M-order Bessel beams, and then pass through the beam-combining axial conical lens group to combine into a resonant beam. This resonant beam resonates within the coaxial resonant cavity formed by the output coupling mirror and the gain chip array, resulting in the output laser beam. This invention employs a modular cascaded structure of axial conical lenses, realizing the parallel superposition of multiple rings of chips, fully utilizing the radial spatial dimension, and improving chip integration density.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor laser technology, and particularly relates to a multi-chip ring array vertical cavity surface-emitting laser. Background Technology

[0002] Optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) combine the advantages of solid-state thin-film lasers and semiconductor lasers. They employ external light injection to generate laser lasing, providing a flexible, high-beam-quality, high-output-power multi-wavelength emission platform. The emission wavelength of VECSELs can be designed using mature bandgap engineering to meet specific needs, allowing for a wide basic operating wavelength range from 670 nm to 2800 nm. Furthermore, the flexible external cavity of this structure enables nonlinear wavelength variations.

[0003] Heating within the active region of a VECSEL can lead to thermal flipping and damage, thus limiting its output power. Traditional power tuning methods for VECSELs rely on increasing the pump spot size while maintaining a constant pump irradiance. However, research indicates that spontaneous emission from the gain chip is another major power-limiting mechanism for VECSELs, especially for larger pump spots. Larger pump spots also introduce more diffraction losses due to the surface roughness of the fabricated VECSEL chip, thereby increasing the threshold and reducing the laser's slope efficiency. Furthermore, greater crystal inhomogeneity may occur in a larger pump region due to local quantum well thickness fluctuations, compositional fluctuations, and defects on the gain chip, leading to VECSEL inhomogeneity broadening, i.e., increased spectral linewidth.

[0004] Laser combining is an effective method to increase laser power. Spectral Beam Combining (SBC) using multiple gain chips can achieve high power output while maintaining near-diffraction-limited beam quality. SBC using a prism array (see: Chinese Patent Publication No. CN121688547A, published March 17, 2026, entitled "Multi-chip Vertical External Cavity Surface Emitting Laser") theoretically has limitations. The maximum number of chips that can be stacked is related to the number of prism mirrors, and the chip arrangement is limited to a single circular trajectory, resulting in a limited number of integrateable chips. Furthermore, the machining precision requirements for each facet of a multifaceted prism (especially a non-rotationally symmetric pyramid) are extremely high, diffraction losses easily occur at the facet junctions, and precise circumferential alignment is required during assembly, significantly increasing system complexity and cost. Summary of the Invention

[0005] In view of this, the present invention aims to provide a multi-chip ring array vertical cavity surface-emitting laser, which adopts a modular cascaded structure of axial conical lenses to solve the decoupling between the number of chips and the number of lens stages and rings, and makes full use of the radial spatial dimension to achieve multi-ring, high-density chip integration and laser beam combining output.

[0006] To achieve the above objectives, the technical solution created by this invention is implemented as follows: This invention provides a multi-chip ring array vertical cavity surface-emitting laser, comprising: a gain chip array arranged coaxially in sequence, a beam-splitting axis conical lens group, a beam-combining axis conical lens group, and an output coupling mirror; The gain chip array consists of N gain chips, which are arranged in M ​​concentric rings. The beam-splitting axial-cone lens group includes M beam-splitting axial-cone lenses, which are sequentially arranged as the first beam-splitting axial-cone lens to the Mth beam-splitting axial-cone lens along the laser beam output direction; the first to the (M-1)th beam-splitting axial-cone lenses are all truncated frustoconical axial-cone lenses, and their truncated top surface is parallel to the plane end surface. The beam combining axis cone lens group includes M beam combining axis cone lenses, which are sequentially set from the Mth beam combining axis cone lens to the first beam combining axis cone lens along the laser beam output direction; N laser beams output from N gain chips are first converged by a beam-splitting axial conical lens group to generate an M-order Bessel beam, and then bundled into a resonant beam by a beam-combining axial conical lens group. The resonant beam resonates in the resonant cavity formed by the output coupling mirror and the gain chip array to form the output laser beam emitted from the output coupling mirror. Where N and M are both natural numbers, and N is greater than 1 and M is greater than 1.

[0007] Furthermore, the multi-chip ring array vertical cavity surface-emitting laser also includes a heat dissipation component, which includes a heat sink and a heat sink. A heat sink is provided below each gain chip. The bottom of the heat sink is fixed to the upper surface of the heat sink, and the top of the heat sink is attached to the gain chip.

[0008] Furthermore, the laser propagation direction emitted by the gain chip array is perpendicular to the planar end face of each axial conical lens; the apex angles of each axial conical lens in the beam splitting axial conical lens group are different, and the apex angle directions are set in the same way; the apex angle directions of each axial conical lens in the beam combining axial conical lens group are all set opposite to the apex angle directions of the beam splitting axial conical lenses, and the apex angles of the first to the Mth beam combining axial conical lenses are the same as the apex angles of the first to the Mth beam splitting axial conical lenses with the same serial number.

[0009] Furthermore, among the M concentric rings, the ring closest to the center is the Mth ring, and the rings moving further away from the center are the (M-1)th ring to the first ring. The laser output from the gain chip array arranged on the first ring is incident and converged by the conical end face of the first beam splitter conical lens, and then converged to the central axis by the first beam combiner conical lens to form a single beam. The laser output from the gain chip array arranged on the Mth ring is perpendicularly transmitted through the truncated end face and planar end face of the first to (M-1)th beam splitter conical lenses, incident and converged by the conical end face of the Mth beam splitter conical lens, and then converged to the central axis by the Mth beam combiner conical lens to form a single beam, and then transmitted perpendicularly through the planar end face through the (M-1)th to the first beam combiner conical lenses.

[0010] Furthermore, each beam-splitting cone lens in the beam-splitting cone lens group, each beam-combining cone lens in the beam-combining cone lens group, and the output coupling mirror are made of optical glass, and their surfaces are coated with an anti-reflection film for the lasing wavelength.

[0011] Furthermore, all N gain chips in the gain chip array are identical and are all positioned within the annular light field formed by the parallel beam incident on the beam-splitting cone lens group.

[0012] Furthermore, the gain chip includes a Bragg mirror structure, a periodic multi-quantum structure, and an antireflection film structure arranged sequentially along the laser emission direction.

[0013] Furthermore, the heat sink is cylindrical or cubic in shape and is made of copper, diamond, or silicon carbide; the heat sink is cylindrical and is made of diamond.

[0014] Furthermore, the gain chip is pumped using a pump light source, which is a semiconductor laser with an output wavelength range of 600nm to 1200nm.

[0015] Compared with the prior art, the present invention can achieve the following beneficial effects: (1) Break through the limitation of the number of prism faces in chip integration: By using a multi-level axial conical lens group to replace the traditional prism lens group, and using the principle of generating Bessel rings by the axial conical lens, the number of chips is decoupled from the number of lens levels and rings, so that the number of chips integrated is no longer limited by the number of geometric faces of a single optical element.

[0016] (2) Achieve high-density multi-ring arrangement of chips: By splitting the beam step by step through a multi-level axial conical lens group, multiple concentric ring beams (multi-ring light field) are generated, so that the gain chip can be arranged in the inner ring and the outer ring at the same time, making full use of the radial space dimension and increasing the chip integration density by a factor of two.

[0017] (3) Achieve modular and scalable beam combining structure: Adopting a modular cascade structure of axial conical lenses, increasing the number of chip arrangement rings only requires connecting the corresponding number of axial conical lens pairs in series in the optical path, without replacing the overall optical components, thus achieving low-cost and short-cycle incremental expansion.

[0018] (4) Simplify the processing and assembly process: By utilizing the rotational symmetry of the axial conical lens, the processing difficulty of optical components is reduced, the circumferential alignment requirement is eliminated, the system assembly and adjustment process is simplified, and the stability and reliability of the laser are improved. Attached Figure Description

[0019] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments and descriptions of the invention are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings: Figure 1 This invention provides a schematic diagram of the structure of the multi-chip ring array vertical cavity surface-emitting laser described in Embodiment 1 of the present invention; Figure 2 This is a schematic diagram of the dual-ring chip arrangement of the multi-chip ring array vertical cavity surface-emitting laser described in Embodiment 1 of the present invention; Figure 3 A schematic diagram of the first beam-splitting axis conical lens in the multi-chip ring array vertical cavity surface-emitting laser described in Embodiment 1 of the present invention; Figure 4 This is a schematic diagram of the chip arrangement structure of the multi-chip ring array vertical cavity surface-emitting laser described in Embodiment 2 of the present invention.

[0020] The reference numerals in the figures include: Output coupling mirror 1, beam combining axis conical lens group 2, first beam combining axis conical lens 21, second beam combining axis conical lens 22, beam splitting axis conical lens group 3, first beam splitting axis conical lens 31, second beam splitting axis conical lens 32, pump light source 4, gain chip 5, heat sink 6, heat sink 7. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not constitute a limitation thereof.

[0022] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other.

[0023] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this invention. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0024] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art will understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0025] The invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0026] Example 1 refer to Figures 1 to 3 The present invention provides a multi-chip ring array vertical cavity surface-emitting laser, comprising: a gain chip array, a beam-splitting conical lens group 3, a beam-combining conical lens group 2, and an output coupling mirror 1 arranged coaxially; the gain chip array includes N gain chips 5, which are arranged in two concentric rings (M=2); the beam-splitting conical lens group 3 includes two beam-splitting conical lenses, and the two beam-splitting conical lenses are arranged in sequence along the laser emission direction as a first beam-splitting conical lens 31 and a second beam-splitting conical lens 32; the beam-combining conical lens group 2... The beam-axis conical lens group 2 includes two beam-combining conical lenses. The two beam-combining conical lenses are arranged sequentially along the laser output direction as a second beam-combining conical lens 22 and a first beam-combining conical lens 21. The N gain chips 5 output N laser beams, which first pass through the beam-splitting conical lens group 3 to generate two-stage Bessel beams, and then pass through the beam-combining conical lens group 2 to be combined into a resonant beam. The resonant beam resonates in the resonant cavity formed by the output coupling mirror 1 and the gain chip array to form the output laser emitted from the output coupling mirror 1. Wherein, N is greater than 1.

[0027] The multi-chip ring array vertical cavity surface emission laser also includes a heat dissipation component, which includes a heat sink 7 and a heat sink 6. A heat sink 6 is provided below each gain chip 5. The bottom of the heat sink 6 is fixed to the upper surface of the heat sink 7, and the top of the heat sink 6 is in contact with the gain chip 5. The heat sink 7 is cubic and made of copper. The heat sink 6 is cylindrical and made of diamond.

[0028] The N gain chips 5 in the gain chip array are all identical and are VECSEL semiconductor chip structures, including a Bragg reflector structure, a periodic multi-quantum structure, and an antireflection coating structure arranged sequentially along the laser emission direction. The Bragg reflector is a multi-layered periodic structure composed of alternating high-refractive-index and low-refractive-index dielectric materials, performing total internal reflection only for long wavelengths. The thickness of each layer of high-refractive-index and low-refractive-index dielectric material is one-quarter of the optical wavelength. The low-refractive-index dielectric material is a high-aluminum-content aluminum gallium arsenide material, and the high-refractive-index dielectric material is a low-aluminum-content aluminum gallium arsenide material, which is a well-known technology in the field. The periodic multi-quantum structure is a periodic arrangement of quantum well structures. Epitaxial techniques employed include metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Epitaxy (MBE) technology is used to grow the Bragg mirror and periodic quantum well structure of the gain chip 5 on the substrate. The gain chip 5 is then cut into tiny cubes to form the gain chip 5. The side surface of the Bragg mirror is bonded to the heat sink 6, and then the heat sink 6 is welded to the heat sink 7. The substrate is thinned and etched to remove the substrate, and an antireflection film is deposited. The antireflection film of the gain chip 5 is located on the surface of the gain chip 5, which allows the pump light and lasing light to be transmitted and prevents the chip from being oxidized.

[0029] Each beam-splitting cone lens in beam-splitting cone lens group 3, each beam-combining cone lens in beam-combining cone lens group 2, and the output coupling mirror 1 are made of optical glass, and their surfaces are coated with an anti-reflection film for the lasing wavelength. The apex angles of the first beam-splitting cone lens 31 and the second beam-splitting cone lens 32 are different, but their apex angle directions are the same, and the laser propagation direction is perpendicular to the planar end face of each beam-splitting cone lens. The first beam-splitting cone lens 31 is a truncated frustum cone lens, and its truncated apex face is parallel to the planar end face. The apex angle directions of the first beam-combining cone lens 21 and the second beam-combining cone lens 22 are both set opposite to the apex angle directions of the beam-splitting cone lenses, and the apex angle of the first beam-combining cone lens 21 is the same as the apex angle of the first beam-splitting cone lens 31 with the same serial number, and the apex angle of the second beam-combining cone lens 22 is the same as the apex angle of the second beam-splitting cone lens 32 with the same serial number.

[0030] All gain chips 5 are positioned within the annular optical field formed after the parallel beam incident on the beam-splitting cone lens group 3. The specific method for determining the annular optical field is as follows: The beam-splitting conical lens group 3 converts the parallel beam into a Bessel beam, and the radius of the resulting annular beam is related to the apex angle of the beam-splitting conical lens and the beam propagation distance. The smaller the apex angle of the beam-splitting conical lens, the larger the radius of the annular beam it produces.

[0031] (1) First-order beam splitting: The collimated resonant beam first passes through the first beam splitting axis conical lens 31 and is converted into a first-order Bessel beam, forming a first annular light field.

[0032] (2) Second-order beam splitting: The beam that has not yet been completely converted by the first beam splitting axial conical lens 31 continues to propagate and reaches the second beam splitting axial conical lens 32. The second beam splitting axial conical lens 32 has a different apex angle than the first beam splitting axial conical lens 31 (usually larger or smaller to achieve different radii), converting the remaining beam into a second-order Bessel beam to form a second annular light field with a different radius than the first annular light field.

[0033] In this way, a single incident beam is split into multiple concentric ring beams with different radii. Theoretically, M-order beam splitting (i.e., M beam-splitting axis conical lenses with different apex angles) can produce M concentric rings, realizing an M-ring concentric ring chip arrangement.

[0034] Chip layout as Figure 2 As shown, the two concentric rings are arranged in two circles. The second ring is closest to the center point, and the first ring is furthest from the center point. The laser output from the gain chip array arranged on the first ring is focused by the conical end face of the first beam splitter lens 31 and then by the first beam combiner lens 21 to the central axis to form a single beam. The laser beam output from the gain chip array arranged on the second ring is perpendicularly transmitted through the truncated end face and the planar end face of the first beam splitter lens 31, and then incident and focused by the conical end face of the second beam splitter lens 32. After passing through the second beam combiner lens 22, it is focused to the central axis to form a single beam, and then perpendicularly transmitted through the planar end face through the first beam combiner lens 21. It is then combined with the combined beam output from the chip array on the first ring to form a single beam, which is then output through the output coupling mirror 1.

[0035] The gain chip 5 is pumped by a pump source 4, which is a semiconductor laser with an output wavelength range of 600nm~1200nm. When the pump light emitted by the pump source 4 is incident on the gain chip 5, it is absorbed by the periodic quantum well structure to generate photogenerated carriers. The carriers emit light after radiative recombination, producing a photon. This photon is reflected by the Bragg mirror inside the gain chip 5, and then the periodic quantum well inside the gain chip 5 provides gain, stimulating the emission of more photons. After passing through the beam splitting axis conical lens group 3, the beam combining axis conical lens group 2, and the output coupling mirror 1, the light is fed back to form a resonance. When the beam in the resonant cavity reaches the threshold of the output coupling mirror 1, the beam is combined and output.

[0036] In this embodiment of the invention, the heat dissipation assembly for fixing the gain chip 5, the beam splitting axis conical lens group 3, the beam combining axis conical lens group 2, and the output coupling mirror 1 are fixed on the optical adjustment frame, while the pump light source 4 is tilted and focused on the surface of the gain chip 5 at a preset angle.

[0037] In some embodiments, the lasing wavelength of the gain chip 5 is in the range of 900nm to 1099nm, the pump light source 4 can be a high-power laser array with an output wavelength of 800nm ​​to 810nm, the quantum well structure of the gain chip 5 is a periodic multi-quantum well structure consisting of an InxGa1-xAs quantum well, an AlGaAs absorption layer and a GaAsP barrier layer, the Bragg reflector is 25-30 pairs of AlGaAs / GaAs, and the solder is indium.

[0038] In some embodiments, the lasing wavelength range of the gain chip 5 is 780nm~899nm, the pump light source 4 can be a high-power laser array with an output wavelength of 600nm~670nm, and the quantum well structure of the gain chip 5 is a periodic multi-quantum well structure of InGaAsP / InGaP / AlGaAs.

[0039] In some embodiments, the lasing wavelength range of the gain chip 5 is 1400nm~1599nm, the pump light source 4 can be a high-power laser array with an output wavelength of 970nm~980nm, and the quantum well structure of the gain chip 5 is a periodic multiple quantum well structure of InAlGaAs / InP.

[0040] Example 2 In another embodiment, the difference from the above embodiment is that the beam-splitting axial conical lens group is provided with three (M=3) beam-splitting axial conical lenses, including three beam-splitting axial conical lenses with different apex angles. The first and second beam-splitting axial conical lenses are truncated frustum-shaped axial conical lenses. Correspondingly, a beam-combining axial conical lens group is provided, which includes three beam-combining axial conical lenses. The first beam-combining axial conical lens has the same apex angle as the first beam-splitting axial conical lens, the second beam-combining axial conical lens has the same apex angle as the second beam-splitting axial conical lens, and the third beam-combining axial conical lens has the same apex angle as the third beam-splitting axial conical lens. The gain chip array is distributed on three concentric rings generated by parallel light incident on the beam-splitting axial conical lens group.

[0041] The chip arrangement corresponding to the three concentric rings is as follows: Figure 4 As shown, the third ring is closest to the center point, and the second and first rings are successively farther away from the center point. The laser output from the gain chip array arranged on the first ring is converged by the conical end face of the first beam-splitting conical lens, and then by the first beam-combining conical lens to the central axis to form a single beam. The laser output from the gain chip array arranged on the second ring is perpendicularly transmitted through the truncated end face and the planar end face of the first beam-splitting conical lens, then converged by the conical end face of the second beam-splitting conical lens, and finally by the second beam-combining conical lens to the central axis to form a single beam. The light is transmitted perpendicularly through the first beam-combining conical lens and combined with the beam output from the first ring to form a single beam. The laser output from the gain chip array arranged on the third ring is transmitted perpendicularly through the truncated and planar end faces of the first and second beam-splitting conical lenses, then converges through the conical end face of the third beam-splitting conical lens, and finally converges to the preset central axis through the third beam-combining conical lens to form a single beam. This beam is then transmitted perpendicularly through the planar end face through the second and first beam-combining conical lenses and combined with the beam output from the second and first rings to form a single beam, which is then output through the output coupling mirror.

[0042] Example 3 An axial conic lens group composed of multiple axial conic lenses is also called a multi-level axial conic lens group. In this scheme, the multi-level axial conic lens group can also be replaced by a single-piece multi-level axial conic lens with a multi-level stepped conical surface. Different radial regions of this lens have different conical surface angles, which can directly split the parallel beam into multiple concentric ring beams, further simplifying the system structure.

[0043] In all the above embodiments, the apex angle relationship of each lens in the multi-level beam splitting axis conical lens group and the multi-level beam combining axis conical lens group is not limited to a fixed value. It can be designed to have a specific proportional relationship to achieve an arithmetic or geometric distribution of the ring radius, thereby adapting to gain chips of different sizes.

[0044] The arrangement of gain chips is not limited to the entire circumference. Depending on actual needs, chips can be arranged only on a portion of the arc to achieve specific power requirements.

[0045] This invention can be applied to spatial laser beam combining, where the laser beams from multiple arranged lasers are combined into a single beam using an axial conical lens. This invention can be used not only for ultra-high-density chip integration within a single VECSEL laser but also for high-power laser beam combining systems. For example, by spatially combining the output light from multiple independent high-power fiber lasers or semiconductor laser arrays using the multi-stage axial conical lens group of this invention, a composite laser beam with extremely high power and brightness can be generated, showing broad application prospects in industrial processing, scientific research, and other fields.

[0046] It should be understood that the various forms of processes shown above can be used to reorder, add, or delete steps. For example, the steps described in this invention disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this invention can be achieved, and this is not limited herein.

[0047] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A multi-chip ring array vertical cavity surface-emitting laser, characterized in that, include: The gain chip array, the beam splitter cone lens group, the beam combiner cone lens group, and the output coupling mirror are arranged coaxially in sequence. The gain chip array includes N gain chips, which are arranged in M ​​concentric rings. The beam-splitting axial-cone lens group includes M beam-splitting axial-cone lenses, which are sequentially arranged as the first beam-splitting axial-cone lens to the Mth beam-splitting axial-cone lens along the laser beam output direction; the first to the (M-1)th beam-splitting axial-cone lenses are all truncated frustoconical axial-cone lenses, and their truncated apex surface is parallel to the planar end surface; The beam combining axis conical lens group includes M beam combining axis conical lenses, which are sequentially configured as the Mth beam combining axis conical lens to the first beam combining axis conical lens along the laser beam output direction; The N gain chips output N laser beams, which are first converged by the beam-splitting axial conical lens group to generate an M-order Bessel beam, and then bundled into a resonant beam by the beam-combining axial conical lens group. The resonant beam resonates in the resonant cavity formed by the output coupling mirror and the gain chip array to form the output laser beam emitted from the output coupling mirror. Where N and M are both natural numbers, and N is greater than 1 and M is greater than 1.

2. The multi-chip ring array vertical cavity surface-emitting laser according to claim 1, characterized in that, The multi-chip ring array vertical cavity surface emitter laser further includes a heat dissipation component, which includes a heat sink and a heat sink. Each gain chip has a corresponding heat sink below it. The bottom of the heat sink is fixed to the upper surface of the heat sink, and the top of the heat sink is attached to the gain chip.

3. The multi-chip ring array vertical cavity surface-emitting laser according to claim 1, characterized in that, The laser emitted by the gain chip array propagates perpendicularly to the planar end face of each axial conical lens; the apex angles of each axial conical lens in the beam splitting axial conical lens group are different, and the apex angle directions are set in the same direction; the apex angle directions of each axial conical lens in the beam combining axial conical lens group are opposite to the apex angle directions of the beam splitting axial conical lenses, and the apex angles of the first to the Mth beam combining axial conical lenses are the same as the apex angles of the first to the Mth beam splitting axial conical lenses with the same serial number.

4. The multi-chip ring array vertical cavity surface-emitting laser according to claim 1, characterized in that, The M concentric rings are arranged such that the Mth ring is closest to the center point, and the rings moving further away from the center point are the (M-1)th ring to the first ring. The laser output from the gain chip array arranged on the first ring is incident and converged by the conical end face of the first beam splitter lens, and then converged to the central axis by the first beam combiner lens to form a single beam. The laser output from the gain chip array arranged on the Mth ring is perpendicularly transmitted through the truncated end face and planar end face of the first to (M-1)th beam splitter lenses, incident and converged by the conical end face of the Mth beam splitter lens, and then converged to the central axis by the Mth beam combiner lens to form a single beam. It is then transmitted perpendicularly through the planar end face from the (M-1)th to the first beam combiner lens.

5. The multi-chip ring array vertical cavity surface-emitting laser according to claim 1, characterized in that, Each beam-splitting cone lens in the beam-splitting cone lens group, each beam-combining cone lens in the beam-combining cone lens group, and the output coupling mirror are all made of optical glass, and their surfaces are coated with an anti-reflection film for the lasing wavelength.

6. The multi-chip ring array vertical cavity surface-emitting laser according to claim 1, characterized in that, The N gain chips in the gain chip array are all identical and are all positioned within the annular light field formed after a parallel beam is incident on the beam-splitting cone lens group.

7. The multi-chip ring array vertical cavity surface-emitting laser according to claim 1, characterized in that, The gain chip includes a Bragg reflector structure, a periodic multi-quantum structure, and an antireflection film structure arranged sequentially along the laser emission direction.

8. The multi-chip ring array vertical cavity surface-emitting laser according to claim 2, characterized in that, The heat sink is cylindrical or cubic in shape and is made of copper, diamond, or silicon carbide; the heat sink is cylindrical and is made of diamond.

9. The multi-chip ring array vertical cavity surface-emitting laser according to claim 1, characterized in that, The gain chip is pumped by a pump light source, which is a semiconductor laser with an output wavelength range of 600nm to 1200nm.

Images