A method of forming a semiconductor device, a semiconductor device, and an image sensor
CN122180164APending Publication Date: 2026-06-09GEKKO SEMICON (SHANGHAI) CO LTD
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Patent Information
- Application Number
- CN202411808609.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-09
- Publication Date
- 2026-06-09
AI Technical Summary
Technical Problem
In image sensors, the top corners of the groove structure are easily damaged when the dielectric layer is thinned, which affects the device performance, especially in the case of large linewidth groove structures.
Method used
Multiple dielectric layers are deposited on the surface of the groove structure, including a second sub-dielectric layer with higher hardness as an etching stop layer, and dielectric layer protrusions are retained around the groove opening to protect the corner area from etching.
Benefits of technology
By protecting the corner of the groove during the dielectric layer thinning process, the uniformity of dielectric layer thinning is improved, corner damage is avoided, and the circuit connection performance of the image sensor is enhanced.
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Figure CN122180164A_ABST
Abstract
The application provides a semiconductor device forming method, which comprises the following steps: etching a substrate according to a first photoetching pattern to form a groove, and forming a first dielectric layer on the surface of the groove; etching part of the first dielectric layer according to a second photoetching pattern, and reserving a predetermined thickness of the first dielectric layer in a predetermined area range around the opening of the groove to avoid damaging the substrate in the opening area of the groove in the subsequent process of thinning the first dielectric layer. The scheme of the application can protect the dielectric layer near the groove and the corner from being etched, and the dielectric layer protrusion at the top of the groove can just offset the rapid loss of the dielectric layer at the corner in the process of thinning the dielectric layer, so as to protect the semiconductor substrate at the corner and improve the uniformity of the dielectric layer thinning in the structure of a large opening groove.
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