Epitaxial wafer, preparation method of epitaxial wafer and application

By setting periodic patterned microstructures in long-wavelength Micro-LED epitaxial wafers, the problem of difficult growth of high-In-content nitride quantum well layers was solved, improving crystal quality and luminous efficiency, reducing spectral width, and enhancing color purity and stability.

CN122180216APending Publication Date: 2026-06-09JIANGSU INST OF ADVANCED SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGSU INST OF ADVANCED SEMICON CO LTD
Filing Date
2024-12-09
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Long-wavelength Micro-LED epitaxial wafers face difficulties in growing high-In-content nitride quantum well layers, leading to lattice mismatch and increased stress, which affects carrier radiative recombination efficiency and emission spectrum width. Furthermore, existing substrate materials cause crack defects in the epitaxial layer.

Method used

The patterned microstructures, including nitride pillars and silicon nanopillars, are arranged in a periodic alternation pattern. By setting patterned microstructures with different spatial occupancy in the thickness direction of the epitaxial wafer, stress is released and crystal quality is improved, while the probability of nonradiative recombination is reduced.

Benefits of technology

This method improves the quantum efficiency of epitaxial wafers, reduces the emission spectrum width, enhances the purity and stability of emission color, and solves the problem of difficult growth of high-In-content nitride quantum well layers in long-wavelength Micro-LED epitaxial wafers.

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Abstract

This invention provides an epitaxial wafer, a method for fabricating the epitaxial wafer, and its application. The epitaxial wafer includes a substrate, a first nitride stress relief layer, a nitride capping layer, an n-type nitride layer, a nitride emitting layer, and a p-type nitride layer stacked together. The epitaxial wafer has two or more spatially occupied patterned microstructures in the thickness direction, periodically disposed on the side of the first nitride stress relief layer away from the substrate. By periodically alternating two or more different spatially occupied patterned microstructures, the epitaxial wafer improves the crystal quality of the nitride quantum well layer in the nitride emitting layer, reduces the probability of nonradiative recombination caused by defects, thereby improving the quantum efficiency of the epitaxial wafer, reducing the emission spectrum width, and improving the purity and stability of the emission color, thus solving the problems existing in long-wavelength Micro-LED epitaxial wafers.
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